Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (211) > Сторінка 4 з 4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD75FFY120C6S | STARPOWER SEMICONDUCTOR | GD75FFY120C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75FSY120L3S | STARPOWER SEMICONDUCTOR | GD75FSY120L3S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75HFU120C1S | STARPOWER SEMICONDUCTOR | GD75HFU120C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75HFX170C1S | STARPOWER SEMICONDUCTOR | GD75HFX170C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75HFX65C1S | STARPOWER SEMICONDUCTOR | GD75HFX65C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75HFY120C1S | STARPOWER SEMICONDUCTOR | GD75HFY120C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Case: C5 45mm Pulsed collector current: 150A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: NPT Ultra Fast IGBT Topology: H-bridge Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 75A |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Case: C5 45mm Pulsed collector current: 150A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: NPT Ultra Fast IGBT Topology: H-bridge Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 75A кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75MLX65L3S | STARPOWER SEMICONDUCTOR | GD75MLX65L3S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75PIX65C6S | STARPOWER SEMICONDUCTOR | GD75PIX65C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD75PIY120C6SN | STARPOWER SEMICONDUCTOR | GD75PIY120C6SN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD800HFX170C3S | STARPOWER SEMICONDUCTOR | GD800HFX170C3S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD800HFY120C3S | STARPOWER SEMICONDUCTOR | GD800HFY120C3S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD800SGX170C3S | STARPOWER SEMICONDUCTOR | GD800SGX170C3S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD80TLQ120F1S | STARPOWER SEMICONDUCTOR | GD80TLQ120F1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |
| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 9 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...20V Topology: MOSFET half-bridge Pulsed drain current: 548A Drain-source voltage: 1.2kV Drain current: 120A On-state resistance: 15mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...20V Topology: MOSFET half-bridge Pulsed drain current: 548A Drain-source voltage: 1.2kV Drain current: 120A On-state resistance: 15mΩ кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD15FSR120L2SF | STARPOWER SEMICONDUCTOR | MD15FSR120L2SF Transistor modules MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 822A Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 822A Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10mΩ кількість в упаковці: 6 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD300HFC170C2S | STARPOWER SEMICONDUCTOR | MD300HFC170C2S Transistor modules MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Drain current: 300A On-state resistance: 7.5mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Drain current: 300A On-state resistance: 7.5mΩ кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Drain current: 300A On-state resistance: 7.5mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Drain current: 300A On-state resistance: 7.5mΩ кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD30FSR120L2SF | STARPOWER SEMICONDUCTOR | MD30FSR120L2SF Transistor modules MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.664kA Drain-source voltage: 1.2kV Drain current: 400A On-state resistance: 5.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.664kA Drain-source voltage: 1.2kV Drain current: 400A On-state resistance: 5.8mΩ кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |
| MD75FSC120L3SF | STARPOWER SEMICONDUCTOR | MD75FSC120L3SF Transistor modules MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| GD75FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD75FFY120C6S IGBT modules
GD75FFY120C6S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD75FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD75FSY120L3S IGBT modules
GD75FSY120L3S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD75HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD75HFU120C1S IGBT modules
GD75HFU120C1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD75HFX170C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD75HFX170C1S IGBT modules
GD75HFX170C1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD75HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD75HFX65C1S IGBT modules
GD75HFX65C1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD75HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD75HFY120C1S IGBT modules
GD75HFY120C1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD75HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C5 45mm
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 75A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C5 45mm
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 75A
товару немає в наявності
В кошику
од. на суму грн.
| GD75HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C5 45mm
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 75A
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C5 45mm
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 75A
кількість в упаковці: 12 шт
товару немає в наявності
В кошику
од. на суму грн.
| GD75MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD75MLX65L3S IGBT modules
GD75MLX65L3S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD75PIX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD75PIX65C6S IGBT modules
GD75PIX65C6S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD75PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
GD75PIY120C6SN IGBT modules
GD75PIY120C6SN IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD800HFX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
GD800HFX170C3S IGBT modules
GD800HFX170C3S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD800HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
GD800HFY120C3S IGBT modules
GD800HFY120C3S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD800SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
GD800SGX170C3S IGBT modules
GD800SGX170C3S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD80TLQ120F1S |
Виробник: STARPOWER SEMICONDUCTOR
GD80TLQ120F1S IGBT modules
GD80TLQ120F1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD900HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| GD900HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 9 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 9 шт
товару немає в наявності
В кошику
од. на суму грн.
| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Drain current: 120A
On-state resistance: 15mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Drain current: 120A
On-state resistance: 15mΩ
товару немає в наявності
В кошику
од. на суму грн.
| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Drain current: 120A
On-state resistance: 15mΩ
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Drain current: 120A
On-state resistance: 15mΩ
кількість в упаковці: 12 шт
товару немає в наявності
В кошику
од. на суму грн.
| MD15FSR120L2SF |
Виробник: STARPOWER SEMICONDUCTOR
MD15FSR120L2SF Transistor modules MOSFET
MD15FSR120L2SF Transistor modules MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
товару немає в наявності
В кошику
од. на суму грн.
| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
кількість в упаковці: 6 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
кількість в упаковці: 6 шт
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| MD300HFC170C2S |
Виробник: STARPOWER SEMICONDUCTOR
MD300HFC170C2S Transistor modules MOSFET
MD300HFC170C2S Transistor modules MOSFET
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од. на суму грн.
| MD300HFR120B3S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
товару немає в наявності
В кошику
од. на суму грн.
| MD300HFR120B3S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
кількість в упаковці: 12 шт
товару немає в наявності
В кошику
од. на суму грн.
| MD300HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
товару немає в наявності
В кошику
од. на суму грн.
| MD300HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
кількість в упаковці: 12 шт
товару немає в наявності
В кошику
од. на суму грн.
| MD30FSR120L2SF |
Виробник: STARPOWER SEMICONDUCTOR
MD30FSR120L2SF Transistor modules MOSFET
MD30FSR120L2SF Transistor modules MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| MD400HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Drain current: 400A
On-state resistance: 5.8mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Drain current: 400A
On-state resistance: 5.8mΩ
товару немає в наявності
В кошику
од. на суму грн.
| MD400HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Drain current: 400A
On-state resistance: 5.8mΩ
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Drain current: 400A
On-state resistance: 5.8mΩ
кількість в упаковці: 12 шт
товару немає в наявності
В кошику
од. на суму грн.
| MD75FSC120L3SF |
Виробник: STARPOWER SEMICONDUCTOR
MD75FSC120L3SF Transistor modules MOSFET
MD75FSC120L3SF Transistor modules MOSFET
товару немає в наявності
В кошику
од. на суму грн.