Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (236) > Сторінка 4 з 4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD50PIY120C5SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
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| GD50PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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| GD50PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 10 шт |
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| GD50PJX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.0 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Trench FS IGBT Electrical mounting: Press-in PCB |
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| GD50PJX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.0 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Trench FS IGBT Electrical mounting: Press-in PCB кількість в упаковці: 1 шт |
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| GD600HFX170C6S | STARPOWER SEMICONDUCTOR | GD600HFX170C6S IGBT modules |
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В кошику од. на суму грн. | |
| GD600HFX65C2S | STARPOWER SEMICONDUCTOR | GD600HFX65C2S IGBT modules |
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| GD600HFX65C6S | STARPOWER SEMICONDUCTOR | GD600HFX65C6S IGBT modules |
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| GD600HFY120C2S | STARPOWER SEMICONDUCTOR | GD600HFY120C2S IGBT modules |
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В кошику од. на суму грн. | |
| GD600HFY120C6S | STARPOWER SEMICONDUCTOR | GD600HFY120C6S IGBT modules |
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| GD600HFY120P1S | STARPOWER SEMICONDUCTOR | GD600HFY120P1S IGBT modules |
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| GD600SGU120C2S | STARPOWER SEMICONDUCTOR | GD600SGU120C2S IGBT modules |
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| GD600SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.7kV Collector current: 600A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
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| GD600SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.7kV Collector current: 600A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
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| GD600SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C2 62mm Semiconductor structure: single transistor |
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| GD600SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C2 62mm Semiconductor structure: single transistor кількість в упаковці: 12 шт |
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| GD650HFX170P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A Max. off-state voltage: 1.7kV Case: P1.0 Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Electrical mounting: screw Technology: Trench FS IGBT Semiconductor structure: transistor/transistor Collector current: 650A Gate-emitter voltage: ±20V Pulsed collector current: 1.3kA |
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| GD650HFX170P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A Max. off-state voltage: 1.7kV Case: P1.0 Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Electrical mounting: screw Technology: Trench FS IGBT Semiconductor structure: transistor/transistor Collector current: 650A Gate-emitter voltage: ±20V Pulsed collector current: 1.3kA кількість в упаковці: 9 шт |
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| GD75FFX170C6S | STARPOWER SEMICONDUCTOR | GD75FFX170C6S IGBT modules |
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| GD75FFX65C5S | STARPOWER SEMICONDUCTOR | GD75FFX65C5S IGBT modules |
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В кошику од. на суму грн. | |
| GD75FFY120C5S | STARPOWER SEMICONDUCTOR | GD75FFY120C5S IGBT modules |
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В кошику од. на суму грн. | |
| GD75FFY120C6S | STARPOWER SEMICONDUCTOR | GD75FFY120C6S IGBT modules |
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| GD75FSY120L3S | STARPOWER SEMICONDUCTOR | GD75FSY120L3S IGBT modules |
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В кошику од. на суму грн. | |
| GD75HFU120C1S | STARPOWER SEMICONDUCTOR | GD75HFU120C1S IGBT modules |
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| GD75HFX170C1S | STARPOWER SEMICONDUCTOR | GD75HFX170C1S IGBT modules |
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| GD75HFX65C1S | STARPOWER SEMICONDUCTOR | GD75HFX65C1S IGBT modules |
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| GD75HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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| GD75HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 1 шт |
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| GD75HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C5 45mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 75A Pulsed collector current: 150A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge |
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| GD75HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C5 45mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 75A Pulsed collector current: 150A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge кількість в упаковці: 12 шт |
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| GD75MLX65L3S | STARPOWER SEMICONDUCTOR | GD75MLX65L3S IGBT modules |
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| GD75PIX65C6S | STARPOWER SEMICONDUCTOR | GD75PIX65C6S IGBT modules |
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| GD75PIY120C6SN | STARPOWER SEMICONDUCTOR | GD75PIY120C6SN IGBT modules |
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| GD800HFX170C3S | STARPOWER SEMICONDUCTOR | GD800HFX170C3S IGBT modules |
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В кошику од. на суму грн. | |
| GD800HFY120C3S | STARPOWER SEMICONDUCTOR | GD800HFY120C3S IGBT modules |
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| GD800SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 800A Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Technology: Trench FS IGBT Mechanical mounting: screw |
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| GD800SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 800A Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 8 шт |
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| GD80TLQ120F1S | STARPOWER SEMICONDUCTOR | GD80TLQ120F1S IGBT modules |
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| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Max. off-state voltage: 1.2kV Case: P1.0 Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Topology: IGBT half-bridge Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT |
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| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Max. off-state voltage: 1.2kV Case: P1.0 Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Topology: IGBT half-bridge Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT кількість в упаковці: 9 шт |
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| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...20V Technology: SiC On-state resistance: 15mΩ Drain current: 120A Pulsed drain current: 548A Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...20V Technology: SiC On-state resistance: 15mΩ Drain current: 120A Pulsed drain current: 548A Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor кількість в упаковці: 12 шт |
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| MD15FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W Semiconductor structure: transistor/transistor Case: L2 Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V On-state resistance: 0.12Ω Drain current: 15A Pulsed drain current: 77A Power dissipation: 101W Drain-source voltage: 1.2kV Topology: MOSFET three-phase bridge; NTC thermistor |
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| MD15FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W Semiconductor structure: transistor/transistor Case: L2 Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V On-state resistance: 0.12Ω Drain current: 15A Pulsed drain current: 77A Power dissipation: 101W Drain-source voltage: 1.2kV Topology: MOSFET three-phase bridge; NTC thermistor кількість в упаковці: 24 шт |
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| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: ±20V Technology: SiC On-state resistance: 10mΩ Drain current: 200A Pulsed drain current: 822A Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: ±20V Technology: SiC On-state resistance: 10mΩ Drain current: 200A Pulsed drain current: 822A Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor кількість в упаковці: 6 шт |
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| MD300HFC170C2S | STARPOWER SEMICONDUCTOR | MD300HFC170C2S Transistor modules MOSFET |
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| MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: ±20V Technology: SiC On-state resistance: 7.5mΩ Drain current: 300A Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: ±20V Technology: SiC On-state resistance: 7.5mΩ Drain current: 300A Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor кількість в упаковці: 12 шт |
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| MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...22V Technology: SiC On-state resistance: 7.5mΩ Drain current: 300A Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...22V Technology: SiC On-state resistance: 7.5mΩ Drain current: 300A Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor кількість в упаковці: 12 шт |
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| MD30FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W Semiconductor structure: transistor/transistor Case: L2 Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V On-state resistance: 60mΩ Drain current: 30A Pulsed drain current: 154A Power dissipation: 203W Drain-source voltage: 1.2kV Topology: MOSFET three-phase bridge; NTC thermistor |
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| MD30FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W Semiconductor structure: transistor/transistor Case: L2 Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V On-state resistance: 60mΩ Drain current: 30A Pulsed drain current: 154A Power dissipation: 203W Drain-source voltage: 1.2kV Topology: MOSFET three-phase bridge; NTC thermistor кількість в упаковці: 12 шт |
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| MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...22V Technology: SiC On-state resistance: 5.8mΩ Drain current: 400A Pulsed drain current: 1.664kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...22V Technology: SiC On-state resistance: 5.8mΩ Drain current: 400A Pulsed drain current: 1.664kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor кількість в упаковці: 12 шт |
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| MD75FSC120L3SF | STARPOWER SEMICONDUCTOR | MD75FSC120L3SF Transistor modules MOSFET |
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| GD50PIY120C5SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
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| GD50PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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| GD50PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
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| GD50PJX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
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| GD50PJX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
кількість в упаковці: 1 шт
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| GD600HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD600HFX170C6S IGBT modules
GD600HFX170C6S IGBT modules
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| GD600HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD600HFX65C2S IGBT modules
GD600HFX65C2S IGBT modules
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В кошику
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| GD600HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD600HFX65C6S IGBT modules
GD600HFX65C6S IGBT modules
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| GD600HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD600HFY120C2S IGBT modules
GD600HFY120C2S IGBT modules
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В кошику
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| GD600HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD600HFY120C6S IGBT modules
GD600HFY120C6S IGBT modules
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| GD600HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
GD600HFY120P1S IGBT modules
GD600HFY120P1S IGBT modules
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| GD600SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD600SGU120C2S IGBT modules
GD600SGU120C2S IGBT modules
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| GD600SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD600SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
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| GD600SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
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| GD600SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
кількість в упаковці: 12 шт
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В кошику
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| GD650HFX170P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
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| GD650HFX170P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
кількість в упаковці: 9 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
кількість в упаковці: 9 шт
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| GD75FFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD75FFX170C6S IGBT modules
GD75FFX170C6S IGBT modules
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В кошику
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| GD75FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
GD75FFX65C5S IGBT modules
GD75FFX65C5S IGBT modules
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| GD75FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
GD75FFY120C5S IGBT modules
GD75FFY120C5S IGBT modules
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В кошику
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| GD75FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD75FFY120C6S IGBT modules
GD75FFY120C6S IGBT modules
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| GD75FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD75FSY120L3S IGBT modules
GD75FSY120L3S IGBT modules
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| GD75HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD75HFU120C1S IGBT modules
GD75HFU120C1S IGBT modules
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В кошику
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| GD75HFX170C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD75HFX170C1S IGBT modules
GD75HFX170C1S IGBT modules
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В кошику
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| GD75HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD75HFX65C1S IGBT modules
GD75HFX65C1S IGBT modules
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В кошику
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| GD75HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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В кошику
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| GD75HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
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В кошику
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| GD75HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 75A
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 75A
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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| GD75HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 75A
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 75A
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
кількість в упаковці: 12 шт
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| GD75MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD75MLX65L3S IGBT modules
GD75MLX65L3S IGBT modules
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В кошику
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| GD75PIX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD75PIX65C6S IGBT modules
GD75PIX65C6S IGBT modules
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В кошику
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| GD75PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
GD75PIY120C6SN IGBT modules
GD75PIY120C6SN IGBT modules
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В кошику
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| GD800HFX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
GD800HFX170C3S IGBT modules
GD800HFX170C3S IGBT modules
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| GD800HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
GD800HFY120C3S IGBT modules
GD800HFY120C3S IGBT modules
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| GD800SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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В кошику
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| GD800SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
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| GD80TLQ120F1S |
Виробник: STARPOWER SEMICONDUCTOR
GD80TLQ120F1S IGBT modules
GD80TLQ120F1S IGBT modules
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| GD900HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Max. off-state voltage: 1.2kV
Case: P1.0
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Max. off-state voltage: 1.2kV
Case: P1.0
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
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| GD900HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Max. off-state voltage: 1.2kV
Case: P1.0
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
кількість в упаковці: 9 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Max. off-state voltage: 1.2kV
Case: P1.0
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
кількість в упаковці: 9 шт
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| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 12 шт
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| MD15FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
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| MD15FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
кількість в упаковці: 24 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
кількість в упаковці: 24 шт
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| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 6 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 6 шт
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| MD300HFC170C2S |
Виробник: STARPOWER SEMICONDUCTOR
MD300HFC170C2S Transistor modules MOSFET
MD300HFC170C2S Transistor modules MOSFET
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| MD300HFR120B3S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD300HFR120B3S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 12 шт
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| MD300HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD300HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 12 шт
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| MD30FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 60mΩ
Drain current: 30A
Pulsed drain current: 154A
Power dissipation: 203W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 60mΩ
Drain current: 30A
Pulsed drain current: 154A
Power dissipation: 203W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
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| MD30FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 60mΩ
Drain current: 30A
Pulsed drain current: 154A
Power dissipation: 203W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 60mΩ
Drain current: 30A
Pulsed drain current: 154A
Power dissipation: 203W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
кількість в упаковці: 12 шт
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| MD400HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD400HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
кількість в упаковці: 12 шт
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| MD75FSC120L3SF |
Виробник: STARPOWER SEMICONDUCTOR
MD75FSC120L3SF Transistor modules MOSFET
MD75FSC120L3SF Transistor modules MOSFET
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