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DG10X06T1 DG10X06T1 STARPOWER SEMICONDUCTOR DG10X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Power dissipation: 196W
Case: TO220
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Turn-off time: 208ns
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
5+88.32 грн
25+79.07 грн
100+70.66 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR DG10X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
3+149.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR DG120X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
1+913.13 грн
3+764.63 грн
10+672.10 грн
В кошику  од. на суму  грн.
DG15X06T1 DG15X06T1 STARPOWER SEMICONDUCTOR DG15X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Power dissipation: 235W
Case: TO220
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 23ns
Turn-off time: 208ns
Collector current: 24A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
4+121.39 грн
5+101.78 грн
25+90.01 грн
100+80.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR DG15X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
3+181.69 грн
10+160.66 грн
30+144.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR DG20X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
4+136.79 грн
5+114.40 грн
25+101.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR DG20X06T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
3+152.19 грн
4+127.02 грн
10+112.72 грн
30+101.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR DG25X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
2+305.28 грн
3+254.04 грн
10+224.59 грн
30+201.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG30X07T2 DG30X07T2 STARPOWER SEMICONDUCTOR DG30X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 208W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 208W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
3+167.39 грн
10+148.05 грн
30+132.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR DG40X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
2+394.96 грн
3+330.58 грн
10+291.89 грн
30+262.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR DG50Q12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
1+688.47 грн
5+575.36 грн
25+508.07 грн
В кошику  од. на суму  грн.
DG50X07T2 DG50X07T2 STARPOWER SEMICONDUCTOR DG50X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 714W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 714W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 116 шт:
термін постачання 14-30 дні (днів)
2+292.60 грн
3+244.78 грн
10+216.18 грн
30+194.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG50X12T2 DG50X12T2 STARPOWER SEMICONDUCTOR DG50X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 592W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 180ns
Turn-off time: 607ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+617.81 грн
3+516.48 грн
10+456.76 грн
В кошику  од. на суму  грн.
DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
1+711.12 грн
3+593.87 грн
10+524.89 грн
30+471.90 грн
В кошику  од. на суму  грн.
DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR DG75X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
1+808.05 грн
3+675.46 грн
10+596.39 грн
30+535.83 грн
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GD1000HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Case: P2.0
Semiconductor structure: transistor/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 1.7kV
Pulsed collector current: 2kA
Topology: IGBT half-bridge
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GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
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GD1400HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
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GD1400HFY120P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
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GD150FFX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 150A
Max. off-state voltage: 650V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Case: C6 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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GD150FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 150A
Max. off-state voltage: 1.2kV
Pulsed collector current: 300A
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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GD15PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F1.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: L2.2
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F1.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120F2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F2.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120F4S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F4.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120F5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F5.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120L2S GD15PJY120L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: L2.2
Mechanical mounting: screw
Type of semiconductor module: IGBT
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
1+2633.40 грн
3+2165.19 грн
12+1945.64 грн
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GD1600SGX170C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Max. off-state voltage: 1.7kV
Pulsed collector current: 3.2kA
Case: C3 130mm
Semiconductor structure: common gate; transistor/transistor
Type of semiconductor module: IGBT
Electrical mounting: screw
Topology: IGBT x2
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GD200TLQ120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
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GD300HTY120C7S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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GD35PJY120F2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Semiconductor structure: diode/transistor
Case: F2.0
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD450HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD450HTY120C7S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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GD50FSY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50PJX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
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GD600SGU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: single transistor
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
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GD75FSY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD75HFU120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD75HFX170C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD75HFX65C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD75HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD75HHU120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD900HFY120P1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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MD120HFR120C2S STARPOWER SEMICONDUCTOR md120hfr120c2s.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD200HFR120C2S STARPOWER SEMICONDUCTOR MD200HFR120C2S.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD300HFR120B3S STARPOWER SEMICONDUCTOR MD300HFR120B3S.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD300HFR120C2S STARPOWER SEMICONDUCTOR MD300HFR120C2S.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD30FSR120L2SF STARPOWER SEMICONDUCTOR MD30FSR120L2SF.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: L2
Topology: MOSFET three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 60mΩ
Pulsed drain current: 154A
Power dissipation: 203W
Technology: SiC
Gate-source voltage: -4...22V
Mechanical mounting: screw
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MD400HFR120C2S STARPOWER SEMICONDUCTOR MD400HFR120C2S.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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DG10X06T1 DG10X06T1.pdf
DG10X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Power dissipation: 196W
Case: TO220
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 21ns
Turn-off time: 208ns
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+88.32 грн
25+79.07 грн
100+70.66 грн
Мінімальне замовлення: 5
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DG10X12T2 DG10X12T2.pdf
DG10X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+149.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG120X07T2 DG120X07T2.pdf
DG120X07T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+913.13 грн
3+764.63 грн
10+672.10 грн
В кошику  од. на суму  грн.
DG15X06T1 DG15X06T1.pdf
DG15X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Power dissipation: 235W
Case: TO220
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 23ns
Turn-off time: 208ns
Collector current: 24A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+121.39 грн
5+101.78 грн
25+90.01 грн
100+80.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DG15X12T2 DG15X12T2.pdf
DG15X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+181.69 грн
10+160.66 грн
30+144.68 грн
Мінімальне замовлення: 3
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DG20X06T1 DG20X06T1.pdf
DG20X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+136.79 грн
5+114.40 грн
25+101.78 грн
Мінімальне замовлення: 4
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DG20X06T2 DG20X06T2.pdf
DG20X06T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+152.19 грн
4+127.02 грн
10+112.72 грн
30+101.78 грн
Мінімальне замовлення: 3
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DG25X12T2 DG25X12T2.pdf
DG25X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+305.28 грн
3+254.04 грн
10+224.59 грн
30+201.88 грн
Мінімальне замовлення: 2
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DG30X07T2 DG30X07T2.pdf
DG30X07T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 208W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 208W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+167.39 грн
10+148.05 грн
30+132.91 грн
Мінімальне замовлення: 3
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DG40X12T2 DG40X12T2.pdf
DG40X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+394.96 грн
3+330.58 грн
10+291.89 грн
30+262.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG50Q12T2 DG50Q12T2.pdf
DG50Q12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+688.47 грн
5+575.36 грн
25+508.07 грн
В кошику  од. на суму  грн.
DG50X07T2 DG50X07T2.pdf
DG50X07T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 714W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 714W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 116 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+292.60 грн
3+244.78 грн
10+216.18 грн
30+194.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG50X12T2 DG50X12T2.pdf
DG50X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 592W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 180ns
Turn-off time: 607ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+617.81 грн
3+516.48 грн
10+456.76 грн
В кошику  од. на суму  грн.
DG75H12T2
DG75H12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+711.12 грн
3+593.87 грн
10+524.89 грн
30+471.90 грн
В кошику  од. на суму  грн.
DG75X12T2 DG75X12T2.pdf
DG75X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+808.05 грн
3+675.46 грн
10+596.39 грн
30+535.83 грн
В кошику  од. на суму  грн.
GD1000HFX170P2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Case: P2.0
Semiconductor structure: transistor/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 1.7kV
Pulsed collector current: 2kA
Topology: IGBT half-bridge
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GD100MLX65L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
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GD1400HFX170P2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
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GD1400HFY120P2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
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GD150FFX65C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 150A
Max. off-state voltage: 650V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Case: C6 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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GD150FFY120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 150A
Max. off-state voltage: 1.2kV
Pulsed collector current: 300A
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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GD15PJX65F1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F1.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJX65L2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: L2.2
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120F1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F1.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120F2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F2.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120F4S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F4.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120F5S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F5.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
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GD15PJY120L2S
GD15PJY120L2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: L2.2
Mechanical mounting: screw
Type of semiconductor module: IGBT
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2633.40 грн
3+2165.19 грн
12+1945.64 грн
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GD1600SGX170C3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Max. off-state voltage: 1.7kV
Pulsed collector current: 3.2kA
Case: C3 130mm
Semiconductor structure: common gate; transistor/transistor
Type of semiconductor module: IGBT
Electrical mounting: screw
Topology: IGBT x2
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GD200TLQ120L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
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GD300HTY120C7S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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GD35PJY120F2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Semiconductor structure: diode/transistor
Case: F2.0
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD450HFY120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD450HTY120C7S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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GD50FSY120L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50PJX65L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
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GD600SGU120C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Topology: single transistor
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
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GD75FSY120L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD75HFU120C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD75HFX170C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD75HFX65C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD75HFY120C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD75HHU120C5S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD900HFY120P1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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MD120HFR120C2S md120hfr120c2s.pdf
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD200HFR120C2S MD200HFR120C2S.pdf
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD300HFR120B3S MD300HFR120B3S.pdf
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD300HFR120C2S MD300HFR120C2S.pdf
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD30FSR120L2SF MD30FSR120L2SF.pdf
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: L2
Topology: MOSFET three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 60mΩ
Pulsed drain current: 154A
Power dissipation: 203W
Technology: SiC
Gate-source voltage: -4...22V
Mechanical mounting: screw
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MD400HFR120C2S MD400HFR120C2S.pdf
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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