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GD150HFY120C2S STARPOWER SEMICONDUCTOR GD150HFY120C2S IGBT modules
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GD150HFY120C8S STARPOWER SEMICONDUCTOR GD150HFY120C8S IGBT modules
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GD150HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 150A
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GD150HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 150A
кількість в упаковці: 10 шт
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GD150MLX65L3S STARPOWER SEMICONDUCTOR GD150MLX65L3S IGBT modules
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GD150PIY120C6SN STARPOWER SEMICONDUCTOR GD150PIY120C6SN IGBT modules
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GD15PJX65F1S STARPOWER SEMICONDUCTOR GD15PJX65F1S IGBT modules
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GD15PJX65L2S STARPOWER SEMICONDUCTOR GD15PJX65L2S IGBT modules
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GD15PJY120F1S STARPOWER SEMICONDUCTOR GD15PJY120F1S IGBT modules
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GD15PJY120F2S STARPOWER SEMICONDUCTOR GD15PJY120F2S IGBT modules
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GD15PJY120F4S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Max. off-state voltage: 1.2kV
Case: F4.1
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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GD15PJY120F4S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Max. off-state voltage: 1.2kV
Case: F4.1
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
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GD15PJY120F5S STARPOWER SEMICONDUCTOR GD15PJY120F5S IGBT modules
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GD15PJY120L2S GD15PJY120L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: L2.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+1899.80 грн
2+1668.31 грн
3+1667.55 грн
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GD15PJY120L2S GD15PJY120L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: L2.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)
1+2279.76 грн
2+2078.97 грн
3+2001.05 грн
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GD1600SGX170C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
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GD1600SGX170C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
кількість в упаковці: 8 шт
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GD200FFX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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GD200FFX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
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GD200FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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GD200FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
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GD200HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
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GD200HFX170C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFX170C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
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GD200HFX65C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C1 34mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFX65C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C1 34mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 24 шт
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GD200HFX65C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFX65C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
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GD200HFX65C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C8 48mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFX65C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C8 48mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 16 шт
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GD200HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
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GD200HFY120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C8 48mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFY120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C8 48mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 16 шт
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GD200TLQ120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: L3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Technology: Advanced Trench FS Fast IGBT
Topology: 3-level inverter TNPC; NTC thermistor
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GD200TLQ120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: L3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Technology: Advanced Trench FS Fast IGBT
Topology: 3-level inverter TNPC; NTC thermistor
кількість в упаковці: 16 шт
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GD20PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: F1.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD20PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: F1.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
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GD20PJX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: L2.2
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD20PJX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: L2.2
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
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GD225HFX170C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Trench FS IGBT
Topology: IGBT half-bridge
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GD225HFX170C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
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GD225HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
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GD225HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
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GD2400SGX170C4S STARPOWER SEMICONDUCTOR GD2400SGX170C4S IGBT modules
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GD2400SGY120C3S STARPOWER SEMICONDUCTOR GD2400SGY120C3S IGBT modules
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GD2400SGY120C4S STARPOWER SEMICONDUCTOR GD2400SGY120C4S IGBT modules
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GD25PJY120F2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: F2.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD25PJY120F2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: F2.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 25 шт
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GD25PJY120F5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: F5.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD25PJY120F5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: F5.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 25 шт
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GD25PJY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: L3.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD25PJY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: L3.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
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GD300HFU120C2S STARPOWER SEMICONDUCTOR GD300HFU120C2S IGBT modules
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GD300HFX170C2S STARPOWER SEMICONDUCTOR GD300HFX170C2S IGBT modules
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GD300HFX170C6S STARPOWER SEMICONDUCTOR GD300HFX170C6S IGBT modules
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GD300HFX65C2S STARPOWER SEMICONDUCTOR GD300HFX65C2S IGBT modules
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GD300HFX65C6S STARPOWER SEMICONDUCTOR GD300HFX65C6S IGBT modules
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GD300HFX65C8SN STARPOWER SEMICONDUCTOR GD300HFX65C8SN IGBT modules
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GD150HFY120C2S
Виробник: STARPOWER SEMICONDUCTOR
GD150HFY120C2S IGBT modules
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GD150HFY120C8S
Виробник: STARPOWER SEMICONDUCTOR
GD150HFY120C8S IGBT modules
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GD150HHU120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 150A
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GD150HHU120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 150A
кількість в упаковці: 10 шт
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GD150MLX65L3S
Виробник: STARPOWER SEMICONDUCTOR
GD150MLX65L3S IGBT modules
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GD150PIY120C6SN
Виробник: STARPOWER SEMICONDUCTOR
GD150PIY120C6SN IGBT modules
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GD15PJX65F1S
Виробник: STARPOWER SEMICONDUCTOR
GD15PJX65F1S IGBT modules
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GD15PJX65L2S
Виробник: STARPOWER SEMICONDUCTOR
GD15PJX65L2S IGBT modules
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GD15PJY120F1S
Виробник: STARPOWER SEMICONDUCTOR
GD15PJY120F1S IGBT modules
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GD15PJY120F2S
Виробник: STARPOWER SEMICONDUCTOR
GD15PJY120F2S IGBT modules
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GD15PJY120F4S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Max. off-state voltage: 1.2kV
Case: F4.1
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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GD15PJY120F4S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Max. off-state voltage: 1.2kV
Case: F4.1
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
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GD15PJY120F5S
Виробник: STARPOWER SEMICONDUCTOR
GD15PJY120F5S IGBT modules
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GD15PJY120L2S
GD15PJY120L2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: L2.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1899.80 грн
2+1668.31 грн
3+1667.55 грн
В кошику  од. на суму  грн.
GD15PJY120L2S
GD15PJY120L2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 15A
Case: L2.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+2279.76 грн
2+2078.97 грн
3+2001.05 грн
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GD1600SGX170C3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
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GD1600SGX170C3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
кількість в упаковці: 8 шт
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GD200FFX65C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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GD200FFX65C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
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GD200FFY120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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GD200FFY120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
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GD200HFU120C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFU120C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
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GD200HFX170C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFX170C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
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GD200HFX65C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C1 34mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFX65C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C1 34mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 24 шт
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GD200HFX65C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFX65C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
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GD200HFX65C8S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C8 48mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFX65C8S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C8 48mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 16 шт
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GD200HFY120C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFY120C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C2 62mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
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GD200HFY120C8S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C8 48mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
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GD200HFY120C8S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Collector current: 200A
Case: C8 48mm
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 16 шт
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GD200TLQ120L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: L3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Technology: Advanced Trench FS Fast IGBT
Topology: 3-level inverter TNPC; NTC thermistor
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GD200TLQ120L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: L3
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Technology: Advanced Trench FS Fast IGBT
Topology: 3-level inverter TNPC; NTC thermistor
кількість в упаковці: 16 шт
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GD20PJX65F1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: F1.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD20PJX65F1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: F1.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
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GD20PJX65L2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: L2.2
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD20PJX65L2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Case: L2.2
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 40A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
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GD225HFX170C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Trench FS IGBT
Topology: IGBT half-bridge
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GD225HFX170C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
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GD225HFY120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
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GD225HFY120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
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GD2400SGX170C4S
Виробник: STARPOWER SEMICONDUCTOR
GD2400SGX170C4S IGBT modules
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GD2400SGY120C3S
Виробник: STARPOWER SEMICONDUCTOR
GD2400SGY120C3S IGBT modules
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GD2400SGY120C4S
Виробник: STARPOWER SEMICONDUCTOR
GD2400SGY120C4S IGBT modules
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GD25PJY120F2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: F2.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD25PJY120F2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: F2.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 25 шт
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GD25PJY120F5S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: F5.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD25PJY120F5S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: F5.1
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 25 шт
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GD25PJY120L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: L3.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
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GD25PJY120L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: L3.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
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GD300HFU120C2S
Виробник: STARPOWER SEMICONDUCTOR
GD300HFU120C2S IGBT modules
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GD300HFX170C2S
Виробник: STARPOWER SEMICONDUCTOR
GD300HFX170C2S IGBT modules
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GD300HFX170C6S
Виробник: STARPOWER SEMICONDUCTOR
GD300HFX170C6S IGBT modules
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GD300HFX65C2S
Виробник: STARPOWER SEMICONDUCTOR
GD300HFX65C2S IGBT modules
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GD300HFX65C6S
Виробник: STARPOWER SEMICONDUCTOR
GD300HFX65C6S IGBT modules
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GD300HFX65C8SN
Виробник: STARPOWER SEMICONDUCTOR
GD300HFX65C8SN IGBT modules
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