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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
| GD200HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C2 62mm Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFY120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C8 48mm Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Electrical mounting: Press-in PCB |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD20PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 20A Case: L2.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 40A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD225HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 225A Case: C6 62mm Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD225HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Gate-emitter voltage: ±20V Collector current: 225A Pulsed collector current: 450A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C6 62mm Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD25PJY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Technology: Advanced Trench FS IGBT Case: L3.0 Mechanical mounting: screw Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Max. off-state voltage: 1.2kV Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C8 48mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C2 62mm Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C6 62mm Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C7 Electrical mounting: Press-in PCB; screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Case: C2 62mm Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: single transistor Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD35PJY120L3S | STARPOWER SEMICONDUCTOR | GD35PJY120L3S IGBT modules |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
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| GD400HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD400HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD400HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C2 62mm Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD400SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
 |
GD40PIY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mechanical mounting: screw Technology: Advanced Trench FS IGBT |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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| GD450HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C2 62mm Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD450HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C6 62mm Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD450HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C7 Electrical mounting: Press-in PCB; screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C5 45mm Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Topology: IGBT three-phase bridge OE output; NTC thermistor Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50HFU120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50PJX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.0 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Trench FS IGBT Electrical mounting: Press-in PCB |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD600HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C2 62mm Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD600HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C6 62mm Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD600HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: P1.0 Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD600SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 600A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD75FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C5 45mm Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD75FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C6 62mm Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD75HFU120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD75HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 150A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C1 34mm Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD75HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD75PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD800HFY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A Gate-emitter voltage: ±20V Collector current: 800A Pulsed collector current: 1.6kA Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C3 130mm Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...20V Technology: SiC On-state resistance: 15mΩ Drain current: 120A Pulsed drain current: 548A Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| MD15FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W Semiconductor structure: transistor/transistor Case: L2 Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V On-state resistance: 0.12Ω Drain current: 15A Pulsed drain current: 77A Power dissipation: 101W Drain-source voltage: 1.2kV Topology: MOSFET three-phase bridge; NTC thermistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: ±20V Technology: SiC On-state resistance: 10mΩ Drain current: 200A Pulsed drain current: 822A Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| MD300HFC170C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.7kV; 300A; C2 62mm; SiC; screw Case: C2 62mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Topology: MOSFET half-bridge Technology: SiC Drain-source voltage: 1.7kV Gate-source voltage: -4...15V Type of semiconductor module: MOSFET transistor Drain current: 300A On-state resistance: 6.83mΩ Electrical mounting: FASTON connectors; screw |
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| MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: ±20V Technology: SiC On-state resistance: 7.5mΩ Drain current: 300A Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...22V Technology: SiC On-state resistance: 7.5mΩ Drain current: 300A Pulsed drain current: 1.096kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| MD30FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W Semiconductor structure: transistor/transistor Case: L2 Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V On-state resistance: 60mΩ Drain current: 30A Pulsed drain current: 154A Power dissipation: 203W Drain-source voltage: 1.2kV Topology: MOSFET three-phase bridge; NTC thermistor |
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| MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-source voltage: -4...22V Technology: SiC On-state resistance: 5.8mΩ Drain current: 400A Pulsed drain current: 1.664kA Drain-source voltage: 1.2kV Topology: MOSFET half-bridge Type of semiconductor module: MOSFET transistor |
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| GD200HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD200HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD200HFY120C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD200TLQ120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
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| GD20PJX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 20A
Case: L2.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 20A
Case: L2.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD225HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 225A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 225A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD225HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Gate-emitter voltage: ±20V
Collector current: 225A
Pulsed collector current: 450A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD25PJY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Technology: Advanced Trench FS IGBT
Case: L3.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Technology: Advanced Trench FS IGBT
Case: L3.0
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
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| GD300HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD300HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
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| GD300HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
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| GD300HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
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| GD300HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
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| GD300HFX65C8SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
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| GD300HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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| GD300SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
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| GD35PJY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD35PJY120L3S IGBT modules
GD35PJY120L3S IGBT modules
на замовлення 14 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3315.90 грн |
| GD400HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD400HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD400HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD400SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD40PIY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5494.40 грн |
| 3+ | 4512.41 грн |
| GD450HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD450HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD450HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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| GD50FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C5 45mm
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C5 45mm
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD50FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: IGBT three-phase bridge OE output; NTC thermistor
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: IGBT three-phase bridge OE output; NTC thermistor
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
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| GD50HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD50HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD50PJX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
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| GD600HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD600HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD600HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: P1.0
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: P1.0
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD600SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD75FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C5 45mm
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C5 45mm
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD75FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD75HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD75HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD75HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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| GD75PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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| GD800HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C3 130mm
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C3 130mm
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD900HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD15FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
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| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD300HFC170C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.7kV; 300A; C2 62mm; SiC; screw
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Technology: SiC
Drain-source voltage: 1.7kV
Gate-source voltage: -4...15V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
On-state resistance: 6.83mΩ
Electrical mounting: FASTON connectors; screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.7kV; 300A; C2 62mm; SiC; screw
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Technology: SiC
Drain-source voltage: 1.7kV
Gate-source voltage: -4...15V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
On-state resistance: 6.83mΩ
Electrical mounting: FASTON connectors; screw
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| MD300HFR120B3S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD300HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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| MD30FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 60mΩ
Drain current: 30A
Pulsed drain current: 154A
Power dissipation: 203W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 60mΩ
Drain current: 30A
Pulsed drain current: 154A
Power dissipation: 203W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
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| MD400HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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