Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (236) > Сторінка 2 з 4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|
| GD10PJY120F1S | STARPOWER SEMICONDUCTOR | GD10PJY120F1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD10PJY120F4S | STARPOWER SEMICONDUCTOR | GD10PJY120F4S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD10PJY120L2S | STARPOWER SEMICONDUCTOR | GD10PJY120L2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD1200HFY120C3S | STARPOWER SEMICONDUCTOR | GD1200HFY120C3S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD1200SGX170C3SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 1.2kA Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2.4kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD1200SGX170C3SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 1.2kA Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2.4kA Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD1400HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Technology: Trench FS IGBT Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Collector current: 1.4kA Gate-emitter voltage: ±20V Max. off-state voltage: 1.7kV Pulsed collector current: 2.8kA Case: P2.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD1400HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Technology: Trench FS IGBT Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Collector current: 1.4kA Gate-emitter voltage: ±20V Max. off-state voltage: 1.7kV Pulsed collector current: 2.8kA Case: P2.0 кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD1400HFY120P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Collector current: 1.4kA Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Pulsed collector current: 2.8kA Case: P2.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD1400HFY120P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Collector current: 1.4kA Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Pulsed collector current: 2.8kA Case: P2.0 кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150FFX65C6S | STARPOWER SEMICONDUCTOR | GD150FFX65C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150FFY120C6S | STARPOWER SEMICONDUCTOR | GD150FFY120C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150HFU120C2S | STARPOWER SEMICONDUCTOR | GD150HFU120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150HFX170C2S | STARPOWER SEMICONDUCTOR | GD150HFX170C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150HFX65C1S | STARPOWER SEMICONDUCTOR | GD150HFX65C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150HFY120C1S | STARPOWER SEMICONDUCTOR | GD150HFY120C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150HFY120C2S | STARPOWER SEMICONDUCTOR | GD150HFY120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150HFY120C8S | STARPOWER SEMICONDUCTOR | GD150HFY120C8S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C6 62mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C6 62mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge кількість в упаковці: 10 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150MLX65L3S | STARPOWER SEMICONDUCTOR | GD150MLX65L3S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD150PIY120C6SN | STARPOWER SEMICONDUCTOR | GD150PIY120C6SN IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD15PJX65F1S | STARPOWER SEMICONDUCTOR | GD15PJX65F1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD15PJX65L2S | STARPOWER SEMICONDUCTOR | GD15PJX65L2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD15PJY120F1S | STARPOWER SEMICONDUCTOR | GD15PJY120F1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD15PJY120F2S | STARPOWER SEMICONDUCTOR | GD15PJY120F2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD15PJY120F4S | STARPOWER SEMICONDUCTOR | GD15PJY120F4S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD15PJY120F5S | STARPOWER SEMICONDUCTOR | GD15PJY120F5S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD15PJY120L2S | STARPOWER SEMICONDUCTOR | GD15PJY120L2S IGBT modules |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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| GD1600SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 1.6kA Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 3.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD1600SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 1.6kA Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 3.2kA Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200FFX65C6S | STARPOWER SEMICONDUCTOR | GD200FFX65C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200FFY120C6S | STARPOWER SEMICONDUCTOR | GD200FFY120C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFU120C2S | STARPOWER SEMICONDUCTOR | GD200HFU120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFX170C2S | STARPOWER SEMICONDUCTOR | GD200HFX170C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFX65C1S | STARPOWER SEMICONDUCTOR | GD200HFX65C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFX65C2S | STARPOWER SEMICONDUCTOR | GD200HFX65C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFX65C8S | STARPOWER SEMICONDUCTOR | GD200HFX65C8S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFY120C2S | STARPOWER SEMICONDUCTOR | GD200HFY120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200HFY120C8S | STARPOWER SEMICONDUCTOR | GD200HFY120C8S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Electrical mounting: Press-in PCB |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Electrical mounting: Press-in PCB кількість в упаковці: 16 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD20PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Collector current: 20A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD20PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Collector current: 20A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD20PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Collector current: 20A Case: L2.2 Gate-emitter voltage: ±20V Pulsed collector current: 40A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD20PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Collector current: 20A Case: L2.2 Gate-emitter voltage: ±20V Pulsed collector current: 40A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD225HFX170C6S | STARPOWER SEMICONDUCTOR | GD225HFX170C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD225HFY120C6S | STARPOWER SEMICONDUCTOR | GD225HFY120C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD2400SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 1.7kV Collector current: 2.4kA Case: C4 140mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 4.8kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD2400SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 1.7kV Collector current: 2.4kA Case: C4 140mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 4.8kA Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD2400SGY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C3 130mm Semiconductor structure: common gate; transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD2400SGY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C3 130mm Semiconductor structure: common gate; transistor/transistor кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD2400SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Topology: IGBT x3 Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C4 140mm Semiconductor structure: common gate; transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD2400SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Topology: IGBT x3 Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C4 140mm Semiconductor structure: common gate; transistor/transistor кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD25PJY120F2S | STARPOWER SEMICONDUCTOR | GD25PJY120F2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD25PJY120F5S | STARPOWER SEMICONDUCTOR | GD25PJY120F5S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD25PJY120L3S | STARPOWER SEMICONDUCTOR | GD25PJY120L3S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: NPT Ultra Fast IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: NPT Ultra Fast IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD300HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| GD10PJY120F1S |
Виробник: STARPOWER SEMICONDUCTOR
GD10PJY120F1S IGBT modules
GD10PJY120F1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD10PJY120F4S |
Виробник: STARPOWER SEMICONDUCTOR
GD10PJY120F4S IGBT modules
GD10PJY120F4S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD10PJY120L2S |
Виробник: STARPOWER SEMICONDUCTOR
GD10PJY120L2S IGBT modules
GD10PJY120L2S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD1200HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
GD1200HFY120C3S IGBT modules
GD1200HFY120C3S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD1200SGX170C3SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| GD1200SGX170C3SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
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В кошику
од. на суму грн.
| GD1400HFX170P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
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В кошику
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| GD1400HFX170P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
кількість в упаковці: 8 шт
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В кошику
од. на суму грн.
| GD1400HFY120P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
Case: P2.0
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
Case: P2.0
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В кошику
од. на суму грн.
| GD1400HFY120P2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
Case: P2.0
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
Case: P2.0
кількість в упаковці: 8 шт
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В кошику
од. на суму грн.
| GD150FFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD150FFX65C6S IGBT modules
GD150FFX65C6S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD150FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD150FFY120C6S IGBT modules
GD150FFY120C6S IGBT modules
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В кошику
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| GD150HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD150HFU120C2S IGBT modules
GD150HFU120C2S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD150HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD150HFX170C2S IGBT modules
GD150HFX170C2S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD150HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD150HFX65C1S IGBT modules
GD150HFX65C1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD150HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD150HFY120C1S IGBT modules
GD150HFY120C1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD150HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD150HFY120C2S IGBT modules
GD150HFY120C2S IGBT modules
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В кошику
од. на суму грн.
| GD150HFY120C8S |
Виробник: STARPOWER SEMICONDUCTOR
GD150HFY120C8S IGBT modules
GD150HFY120C8S IGBT modules
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В кошику
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| GD150HHU120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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В кошику
од. на суму грн.
| GD150HHU120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
кількість в упаковці: 10 шт
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В кошику
од. на суму грн.
| GD150MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD150MLX65L3S IGBT modules
GD150MLX65L3S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD150PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
GD150PIY120C6SN IGBT modules
GD150PIY120C6SN IGBT modules
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В кошику
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| GD15PJX65F1S |
Виробник: STARPOWER SEMICONDUCTOR
GD15PJX65F1S IGBT modules
GD15PJX65F1S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD15PJX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
GD15PJX65L2S IGBT modules
GD15PJX65L2S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD15PJY120F1S |
Виробник: STARPOWER SEMICONDUCTOR
GD15PJY120F1S IGBT modules
GD15PJY120F1S IGBT modules
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В кошику
од. на суму грн.
| GD15PJY120F2S |
Виробник: STARPOWER SEMICONDUCTOR
GD15PJY120F2S IGBT modules
GD15PJY120F2S IGBT modules
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В кошику
од. на суму грн.
| GD15PJY120F4S |
Виробник: STARPOWER SEMICONDUCTOR
GD15PJY120F4S IGBT modules
GD15PJY120F4S IGBT modules
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В кошику
од. на суму грн.
| GD15PJY120F5S |
Виробник: STARPOWER SEMICONDUCTOR
GD15PJY120F5S IGBT modules
GD15PJY120F5S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD15PJY120L2S |
Виробник: STARPOWER SEMICONDUCTOR
GD15PJY120L2S IGBT modules
GD15PJY120L2S IGBT modules
на замовлення 22 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2178.97 грн |
| 2+ | 2060.50 грн |
| GD1600SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| GD1600SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
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В кошику
од. на суму грн.
| GD200FFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD200FFX65C6S IGBT modules
GD200FFX65C6S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD200FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD200FFY120C6S IGBT modules
GD200FFY120C6S IGBT modules
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В кошику
од. на суму грн.
| GD200HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD200HFU120C2S IGBT modules
GD200HFU120C2S IGBT modules
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В кошику
од. на суму грн.
| GD200HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD200HFX170C2S IGBT modules
GD200HFX170C2S IGBT modules
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В кошику
од. на суму грн.
| GD200HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD200HFX65C1S IGBT modules
GD200HFX65C1S IGBT modules
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В кошику
од. на суму грн.
| GD200HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD200HFX65C2S IGBT modules
GD200HFX65C2S IGBT modules
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В кошику
од. на суму грн.
| GD200HFX65C8S |
Виробник: STARPOWER SEMICONDUCTOR
GD200HFX65C8S IGBT modules
GD200HFX65C8S IGBT modules
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В кошику
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| GD200HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD200HFY120C2S IGBT modules
GD200HFY120C2S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD200HFY120C8S |
Виробник: STARPOWER SEMICONDUCTOR
GD200HFY120C8S IGBT modules
GD200HFY120C8S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD200TLQ120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
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В кошику
од. на суму грн.
| GD200TLQ120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
кількість в упаковці: 16 шт
товару немає в наявності
В кошику
од. на суму грн.
| GD20PJX65F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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В кошику
од. на суму грн.
| GD20PJX65F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| GD20PJX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: L2.2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: L2.2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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В кошику
од. на суму грн.
| GD20PJX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: L2.2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: L2.2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| GD225HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD225HFX170C6S IGBT modules
GD225HFX170C6S IGBT modules
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В кошику
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| GD225HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD225HFY120C6S IGBT modules
GD225HFY120C6S IGBT modules
товару немає в наявності
В кошику
од. на суму грн.
| GD2400SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD2400SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
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| GD2400SGY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C3 130mm
Semiconductor structure: common gate; transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C3 130mm
Semiconductor structure: common gate; transistor/transistor
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| GD2400SGY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C3 130mm
Semiconductor structure: common gate; transistor/transistor
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C3 130mm
Semiconductor structure: common gate; transistor/transistor
кількість в упаковці: 8 шт
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| GD2400SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Topology: IGBT x3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C4 140mm
Semiconductor structure: common gate; transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Topology: IGBT x3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C4 140mm
Semiconductor structure: common gate; transistor/transistor
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| GD2400SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Topology: IGBT x3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C4 140mm
Semiconductor structure: common gate; transistor/transistor
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Topology: IGBT x3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C4 140mm
Semiconductor structure: common gate; transistor/transistor
кількість в упаковці: 8 шт
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| GD25PJY120F2S |
Виробник: STARPOWER SEMICONDUCTOR
GD25PJY120F2S IGBT modules
GD25PJY120F2S IGBT modules
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| GD25PJY120F5S |
Виробник: STARPOWER SEMICONDUCTOR
GD25PJY120F5S IGBT modules
GD25PJY120F5S IGBT modules
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| GD25PJY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD25PJY120L3S IGBT modules
GD25PJY120L3S IGBT modules
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| GD300HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
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| GD300HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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