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| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| GD35PJY120F2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: F2.0 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||
| GD35PJY120F5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1 Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: F5.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||
 |
GD35PJY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Case: L3.0 Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 35A Gate-emitter voltage: ±20V Pulsed collector current: 70A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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| GD3600SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 1.7kV Collector current: 3.6kA Case: C4 140mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 7.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD3600SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 1.2kV Collector current: 3.6kA Case: C4 140mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 7.2kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | |||||
| GD400CLY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD400CUY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD400HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD400HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD400HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD400HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD400SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD400SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.7kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD400SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
 |
GD40PIY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Case: C5 45mm Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 40A Gate-emitter voltage: ±20V Pulsed collector current: 80A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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| GD450HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 450A Case: C6 62mm Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||
| GD450HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 450A Case: C6 62mm Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||
| GD450HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 450A Case: C7 Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | |||||
| GD50FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50FSX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: L2.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: L3.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. | |||||
| GD50HFX170C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 50A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | |||||
| GD50PIX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD50PIY120C5SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD50PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||
| GD50PJX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 50A Case: L3.0 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD600HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 600A Case: C6 62mm Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||
| GD600HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 600A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD600HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 600A Case: C6 62mm Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||
| GD600HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 600A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD600HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 600A Case: C6 62mm Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||
| GD600HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 600A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 9 шт В кошику од. на суму грн. | |||||
| GD600SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 600A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD600SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.7kV Collector current: 600A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD600SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 600A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| GD75FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 75A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD75FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: L3.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. | |||||
| GD75MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 75A; L3.1; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Collector current: 75A Case: L3.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| GD800HFX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 800A Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | |||||
| GD800HFY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 800A Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | |||||
| GD80TLQ120F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: 3-level inverter TNPC; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 80A Case: F1.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 160A Technology: Advanced Trench FS Fast IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||
| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 9 шт В кошику од. на суму грн. | |||||
| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
 Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Technology: SiC Drain current: 120A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: -4...20V On-state resistance: 15mΩ Topology: MOSFET half-bridge Pulsed drain current: 548A Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Technology: SiC Drain current: 200A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±20V On-state resistance: 10mΩ Topology: MOSFET half-bridge Pulsed drain current: 822A Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||
| MD300HFC170C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules Description: Module; transistor/transistor; 1.7kV; 300A; C2 62mm; SiC; screw Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.7kV Drain current: 300A Topology: MOSFET half-bridge Electrical mounting: FASTON connectors; screw On-state resistance: 6.83mΩ Technology: SiC Gate-source voltage: -4...15V Mechanical mounting: screw Case: C2 62mm |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 Technology: SiC Drain current: 300A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±20V On-state resistance: 7.5mΩ Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm Technology: SiC Drain current: 300A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: -4...22V On-state resistance: 7.5mΩ Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||
| MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm Technology: SiC Drain current: 400A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: -4...22V On-state resistance: 5.8mΩ Topology: MOSFET half-bridge Pulsed drain current: 1.664kA Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. |
| GD35PJY120F2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: F2.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: F2.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| GD35PJY120F5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: F5.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: F5.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| GD35PJY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: L3.0
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: L3.0
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4042.15 грн |
| 4+ | 3313.16 грн |
| GD3600SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 3.6kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 3.6kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| GD3600SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.2kV
Collector current: 3.6kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.2kV
Collector current: 3.6kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.
| GD400CLY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| GD400CUY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| GD400HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| GD400HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
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В кошику
од. на суму грн.
| GD400HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| GD400HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| GD400SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| GD400SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| GD400SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| GD40PIY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C5 45mm
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C5 45mm
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5633.29 грн |
| 3+ | 4626.49 грн |
| GD450HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| GD450HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| GD450HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 8 шт
В кошику
од. на суму грн.
| GD50FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD50FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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| GD50FSX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD50FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 16 шт
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| GD50HFX170C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 50A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 50A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 24 шт
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| GD50PIX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD50PIY120C5SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 12 шт
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| GD50PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 10 шт
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| GD50PJX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD600HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 10 шт
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| GD600HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 600A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 600A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 12 шт
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| GD600HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 600A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 600A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 10 шт
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| GD600HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 12 шт
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| GD600HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 10 шт
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| GD600HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 9 шт
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| GD600SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 12 шт
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| GD600SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 12 шт
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| GD600SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 12 шт
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| GD75FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 75A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 75A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD75FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 16 шт
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| GD75MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 75A; L3.1; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 75A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 75A; L3.1; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 75A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD800HFX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 8 шт
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| GD800HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 800A
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 8 шт
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| GD80TLQ120F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: 3-level inverter TNPC; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 80A
Case: F1.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: Advanced Trench FS Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: 3-level inverter TNPC; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 80A
Case: F1.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: Advanced Trench FS Fast IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 25 шт
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| GD900HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 9 шт
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| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 120A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: -4...20V
On-state resistance: 15mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 120A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: -4...20V
On-state resistance: 15mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Type of semiconductor module: MOSFET transistor
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Мінімальне замовлення: 12 шт
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| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 200A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 200A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Type of semiconductor module: MOSFET transistor
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Мінімальне замовлення: 6 шт
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| MD300HFC170C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules
Description: Module; transistor/transistor; 1.7kV; 300A; C2 62mm; SiC; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.7kV
Drain current: 300A
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
On-state resistance: 6.83mΩ
Technology: SiC
Gate-source voltage: -4...15V
Mechanical mounting: screw
Case: C2 62mm
Category: Transistor modules
Description: Module; transistor/transistor; 1.7kV; 300A; C2 62mm; SiC; screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.7kV
Drain current: 300A
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
On-state resistance: 6.83mΩ
Technology: SiC
Gate-source voltage: -4...15V
Mechanical mounting: screw
Case: C2 62mm
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Мінімальне замовлення: 12 шт
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| MD300HFR120B3S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Technology: SiC
Drain current: 300A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Technology: SiC
Drain current: 300A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
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Мінімальне замовлення: 12 шт
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| MD300HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 300A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: -4...22V
On-state resistance: 7.5mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 300A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: -4...22V
On-state resistance: 7.5mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
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Мінімальне замовлення: 12 шт
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| MD400HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 400A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: -4...22V
On-state resistance: 5.8mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Technology: SiC
Drain current: 400A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Gate-source voltage: -4...22V
On-state resistance: 5.8mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Type of semiconductor module: MOSFET transistor
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Мінімальне замовлення: 12 шт
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