Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (236) > Сторінка 3 з 4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|
| GD300HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 10 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 10 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C8 48mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C8 48mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 16 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 10 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Case: C7 Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Case: C7 Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Mechanical mounting: screw Semiconductor structure: transistor/transistor кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: screw Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: screw Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Semiconductor structure: single transistor кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD30PJX65F1S | STARPOWER SEMICONDUCTOR | GD30PJX65F1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD30PJX65L2S | STARPOWER SEMICONDUCTOR | GD30PJX65L2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD35PJY120F2S | STARPOWER SEMICONDUCTOR | GD35PJY120F2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD35PJY120F5S | STARPOWER SEMICONDUCTOR | GD35PJY120F5S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD35PJY120L3S | STARPOWER SEMICONDUCTOR | GD35PJY120L3S IGBT modules |
на замовлення 15 шт: термін постачання 14-21 дні (днів) |
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| GD3600SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 1.7kV Collector current: 3.6kA Case: C4 140mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 7.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD3600SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 1.7kV Collector current: 3.6kA Case: C4 140mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 7.2kA Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD3600SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C4 140mm Electrical mounting: screw Mechanical mounting: screw Technology: Advanced Trench FS IGBT Topology: IGBT x3 Gate-emitter voltage: ±20V Collector current: 3.6kA Pulsed collector current: 7.2kA |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD3600SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C4 140mm Electrical mounting: screw Mechanical mounting: screw Technology: Advanced Trench FS IGBT Topology: IGBT x3 Gate-emitter voltage: ±20V Collector current: 3.6kA Pulsed collector current: 7.2kA кількість в упаковці: 8 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400CLY120C2S | STARPOWER SEMICONDUCTOR | GD400CLY120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400CUY120C2S | STARPOWER SEMICONDUCTOR | GD400CUY120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400HFU120C2S | STARPOWER SEMICONDUCTOR | GD400HFU120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400HFX170C2S | STARPOWER SEMICONDUCTOR | GD400HFX170C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400HFX65C2S | STARPOWER SEMICONDUCTOR | GD400HFX65C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400HFY120C2S | STARPOWER SEMICONDUCTOR | GD400HFY120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400SGU120C2S | STARPOWER SEMICONDUCTOR | GD400SGU120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.7kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of semiconductor module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.7kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C2 62mm Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD400SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C2 62mm Semiconductor structure: single transistor кількість в упаковці: 12 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD40PIY120C5S | STARPOWER SEMICONDUCTOR | GD40PIY120C5S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD450HFX170C6S | STARPOWER SEMICONDUCTOR | GD450HFX170C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD450HFX65C6S | STARPOWER SEMICONDUCTOR | GD450HFX65C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD450HFY120C2S | STARPOWER SEMICONDUCTOR | GD450HFY120C2S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD450HFY120C6S | STARPOWER SEMICONDUCTOR | GD450HFY120C6S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD450HTX170C7S | STARPOWER SEMICONDUCTOR | GD450HTX170C7S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD450HTY120C7S | STARPOWER SEMICONDUCTOR | GD450HTY120C7S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50FSX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: L2.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50FSX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: L2.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Topology: IGBT three-phase bridge OE output; NTC thermistor Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Topology: IGBT three-phase bridge OE output; NTC thermistor Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB кількість в упаковці: 16 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50HFU120C1S | STARPOWER SEMICONDUCTOR | GD50HFU120C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50HFX170C1S | STARPOWER SEMICONDUCTOR | GD50HFX170C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50HFX65C1S | STARPOWER SEMICONDUCTOR | GD50HFX65C1S IGBT modules |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C5 45mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C5 45mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50PIX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||
| GD50PIX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 1 шт |
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| GD50PIY120C5SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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| GD300HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
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| GD300HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 10 шт
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| GD300HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
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| GD300HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 10 шт
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| GD300HFX65C8SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX65C8SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 16 шт
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| GD300HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
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| GD300HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 10 шт
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| GD300HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 8 шт
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| GD300SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
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| GD300SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
кількість в упаковці: 12 шт
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| GD30PJX65F1S |
Виробник: STARPOWER SEMICONDUCTOR
GD30PJX65F1S IGBT modules
GD30PJX65F1S IGBT modules
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| GD30PJX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
GD30PJX65L2S IGBT modules
GD30PJX65L2S IGBT modules
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| GD35PJY120F2S |
Виробник: STARPOWER SEMICONDUCTOR
GD35PJY120F2S IGBT modules
GD35PJY120F2S IGBT modules
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| GD35PJY120F5S |
Виробник: STARPOWER SEMICONDUCTOR
GD35PJY120F5S IGBT modules
GD35PJY120F5S IGBT modules
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| GD35PJY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD35PJY120L3S IGBT modules
GD35PJY120L3S IGBT modules
на замовлення 15 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3213.96 грн |
| GD3600SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 3.6kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 3.6kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD3600SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 3.6kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 3.6kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
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| GD3600SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
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| GD3600SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
кількість в упаковці: 8 шт
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| GD400CLY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD400CLY120C2S IGBT modules
GD400CLY120C2S IGBT modules
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| GD400CUY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD400CUY120C2S IGBT modules
GD400CUY120C2S IGBT modules
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| GD400HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD400HFU120C2S IGBT modules
GD400HFU120C2S IGBT modules
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| GD400HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD400HFX170C2S IGBT modules
GD400HFX170C2S IGBT modules
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В кошику
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| GD400HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD400HFX65C2S IGBT modules
GD400HFX65C2S IGBT modules
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В кошику
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| GD400HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD400HFY120C2S IGBT modules
GD400HFY120C2S IGBT modules
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| GD400SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD400SGU120C2S IGBT modules
GD400SGU120C2S IGBT modules
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| GD400SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD400SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
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| GD400SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
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| GD400SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
кількість в упаковці: 12 шт
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В кошику
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| GD40PIY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
GD40PIY120C5S IGBT modules
GD40PIY120C5S IGBT modules
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В кошику
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| GD450HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD450HFX170C6S IGBT modules
GD450HFX170C6S IGBT modules
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В кошику
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| GD450HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD450HFX65C6S IGBT modules
GD450HFX65C6S IGBT modules
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В кошику
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| GD450HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
GD450HFY120C2S IGBT modules
GD450HFY120C2S IGBT modules
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В кошику
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| GD450HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
GD450HFY120C6S IGBT modules
GD450HFY120C6S IGBT modules
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В кошику
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| GD450HTX170C7S |
Виробник: STARPOWER SEMICONDUCTOR
GD450HTX170C7S IGBT modules
GD450HTX170C7S IGBT modules
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В кошику
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| GD450HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
GD450HTY120C7S IGBT modules
GD450HTY120C7S IGBT modules
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В кошику
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| GD50FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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В кошику
од. на суму грн.
| GD50FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| GD50FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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В кошику
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| GD50FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
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В кошику
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| GD50FSX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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В кошику
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| GD50FSX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
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В кошику
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| GD50FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: IGBT three-phase bridge OE output; NTC thermistor
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: IGBT three-phase bridge OE output; NTC thermistor
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
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В кошику
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| GD50FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: IGBT three-phase bridge OE output; NTC thermistor
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: IGBT three-phase bridge OE output; NTC thermistor
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
кількість в упаковці: 16 шт
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В кошику
од. на суму грн.
| GD50HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD50HFU120C1S IGBT modules
GD50HFU120C1S IGBT modules
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В кошику
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| GD50HFX170C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD50HFX170C1S IGBT modules
GD50HFX170C1S IGBT modules
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В кошику
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| GD50HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
GD50HFX65C1S IGBT modules
GD50HFX65C1S IGBT modules
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В кошику
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| GD50HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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| GD50HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
кількість в упаковці: 1 шт
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| GD50PIX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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В кошику
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| GD50PIX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
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| GD50PIY120C5SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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В кошику
од. на суму грн.