Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (291) > Сторінка 3 з 5
| Фото | Назва | Виробник | Інформація |
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| GD200HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 650V |
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| GD200HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C2 62mm Max. off-state voltage: 650V кількість в упаковці: 12 шт |
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| GD200HFX65C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 650V Case: C8 48mm Semiconductor structure: transistor/transistor Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
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| GD200HFX65C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 650V Case: C8 48mm Semiconductor structure: transistor/transistor Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A кількість в упаковці: 16 шт |
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| GD200HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C2 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD200HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C2 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 12 шт |
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| GD200HFY120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Case: C8 48mm Semiconductor structure: transistor/transistor Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
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| GD200HFY120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Case: C8 48mm Semiconductor structure: transistor/transistor Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A кількість в упаковці: 16 шт |
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| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS Fast IGBT Topology: 3-level inverter TNPC; NTC thermistor Case: L3 Max. off-state voltage: 1.2kV |
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| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS Fast IGBT Topology: 3-level inverter TNPC; NTC thermistor Case: L3 Max. off-state voltage: 1.2kV кількість в упаковці: 16 шт |
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| GD20PJX65F1S | STARPOWER SEMICONDUCTOR | GD20PJX65F1S IGBT modules |
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| GD20PJX65L2S | STARPOWER SEMICONDUCTOR | GD20PJX65L2S IGBT modules |
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| GD225HFX170C6S | STARPOWER SEMICONDUCTOR | GD225HFX170C6S IGBT modules |
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| GD225HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Pulsed collector current: 450A Collector current: 225A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD225HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Pulsed collector current: 450A Collector current: 225A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 10 шт |
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| GD2400SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.7kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Trench FS IGBT |
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| GD2400SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.7kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Trench FS IGBT кількість в упаковці: 8 шт |
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| GD2400SGY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C3 130mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Advanced Trench FS IGBT |
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| GD2400SGY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C3 130mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Advanced Trench FS IGBT кількість в упаковці: 8 шт |
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| GD2400SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Advanced Trench FS IGBT |
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| GD2400SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Technology: Advanced Trench FS IGBT кількість в упаковці: 8 шт |
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| GD25PJY120F2S | STARPOWER SEMICONDUCTOR | GD25PJY120F2S IGBT modules |
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| GD25PJY120F5S | STARPOWER SEMICONDUCTOR | GD25PJY120F5S IGBT modules |
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| GD25PJY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Electrical mounting: Press-in PCB Mechanical mounting: screw Case: L3.0 Pulsed collector current: 50A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT |
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| GD25PJY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Electrical mounting: Press-in PCB Mechanical mounting: screw Case: L3.0 Pulsed collector current: 50A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT кількість в упаковці: 1 шт |
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| GD300HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: NPT Ultra Fast IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: NPT Ultra Fast IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD300HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C6 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C6 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 10 шт |
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| GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C6 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 650V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C6 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 650V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 10 шт |
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| GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C8 48mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C8 48mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 16 шт |
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| GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Advanced Trench FS IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Advanced Trench FS IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Advanced Trench FS IGBT Case: C6 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Advanced Trench FS IGBT Case: C6 62mm Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 10 шт |
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| GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Topology: IGBT half-bridge x3; NTC thermistor Technology: Advanced Trench FS IGBT Case: C7 Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Topology: IGBT half-bridge x3; NTC thermistor Technology: Advanced Trench FS IGBT Case: C7 Collector current: 300A Semiconductor structure: transistor/transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 8 шт |
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| GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Topology: single transistor Technology: Advanced Trench FS IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: single transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V |
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| GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Topology: single transistor Technology: Advanced Trench FS IGBT Case: C2 62mm Collector current: 300A Semiconductor structure: single transistor Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD30PJX65F1S | STARPOWER SEMICONDUCTOR | GD30PJX65F1S IGBT modules |
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| GD30PJX65L2S | STARPOWER SEMICONDUCTOR | GD30PJX65L2S IGBT modules |
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| GD35PJY120F2S | STARPOWER SEMICONDUCTOR | GD35PJY120F2S IGBT modules |
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| GD35PJY120F5S | STARPOWER SEMICONDUCTOR | GD35PJY120F5S IGBT modules |
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| GD35PJY120L3S | STARPOWER SEMICONDUCTOR | GD35PJY120L3S IGBT modules |
на замовлення 16 шт: термін постачання 7-14 дні (днів) |
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| GD3600SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.7kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Pulsed collector current: 7.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 3.6kA |
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| GD3600SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.7kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Pulsed collector current: 7.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 3.6kA кількість в упаковці: 1 шт |
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| GD3600SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Pulsed collector current: 7.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 3.6kA |
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| GD3600SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C4 140mm Electrical mounting: screw Topology: IGBT x3 Mechanical mounting: screw Pulsed collector current: 7.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 3.6kA кількість в упаковці: 8 шт |
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| GD400CLY120C2S | STARPOWER SEMICONDUCTOR | GD400CLY120C2S IGBT modules |
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| GD400CUY120C2S | STARPOWER SEMICONDUCTOR | GD400CUY120C2S IGBT modules |
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| GD400HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Case: C2 62mm Collector current: 400A Pulsed collector current: 800A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V |
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| GD400HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Case: C2 62mm Collector current: 400A Pulsed collector current: 800A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD400HFX170C2S | STARPOWER SEMICONDUCTOR | GD400HFX170C2S IGBT modules |
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| GD400HFX65C2S | STARPOWER SEMICONDUCTOR | GD400HFX65C2S IGBT modules |
товар відсутній |
| GD200HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 650V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 650V
товар відсутній
| GD200HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 650V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Max. off-state voltage: 650V
кількість в упаковці: 12 шт
товар відсутній
| GD200HFX65C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 650V
Case: C8 48mm
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 650V
Case: C8 48mm
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
товар відсутній
| GD200HFX65C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 650V
Case: C8 48mm
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 650V
Case: C8 48mm
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 16 шт
товар відсутній
| GD200HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD200HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Pulsed collector current: 400A
Collector current: 200A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 12 шт
товар відсутній
| GD200HFY120C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Case: C8 48mm
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Case: C8 48mm
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
товар відсутній
| GD200HFY120C8S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Case: C8 48mm
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Case: C8 48mm
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 16 шт
товар відсутній
| GD200TLQ120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS Fast IGBT
Topology: 3-level inverter TNPC; NTC thermistor
Case: L3
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS Fast IGBT
Topology: 3-level inverter TNPC; NTC thermistor
Case: L3
Max. off-state voltage: 1.2kV
товар відсутній
| GD200TLQ120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS Fast IGBT
Topology: 3-level inverter TNPC; NTC thermistor
Case: L3
Max. off-state voltage: 1.2kV
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS Fast IGBT
Topology: 3-level inverter TNPC; NTC thermistor
Case: L3
Max. off-state voltage: 1.2kV
кількість в упаковці: 16 шт
товар відсутній
| GD225HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Pulsed collector current: 450A
Collector current: 225A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Pulsed collector current: 450A
Collector current: 225A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD225HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Pulsed collector current: 450A
Collector current: 225A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Pulsed collector current: 450A
Collector current: 225A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
товар відсутній
| GD2400SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
товар відсутній
| GD2400SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
кількість в упаковці: 8 шт
товар відсутній
| GD2400SGY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C3 130mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C3 130mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
товар відсутній
| GD2400SGY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C3 130mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C3 130mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
кількість в упаковці: 8 шт
товар відсутній
| GD2400SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
товар відсутній
| GD2400SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Technology: Advanced Trench FS IGBT
кількість в упаковці: 8 шт
товар відсутній
| GD25PJY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: L3.0
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: L3.0
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
товар відсутній
| GD25PJY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: L3.0
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: L3.0
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
кількість в упаковці: 1 шт
товар відсутній
| GD300HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: NPT Ultra Fast IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: NPT Ultra Fast IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: NPT Ultra Fast IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: NPT Ultra Fast IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD300HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD300HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
товар відсутній
| GD300HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD300HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
товар відсутній
| GD300HFX65C8SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C8 48mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C8 48mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HFX65C8SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C8 48mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C8 48mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 16 шт
товар відсутній
| GD300HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD300HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Advanced Trench FS IGBT
Case: C6 62mm
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
товар відсутній
| GD300HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Topology: IGBT half-bridge x3; NTC thermistor
Technology: Advanced Trench FS IGBT
Case: C7
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Topology: IGBT half-bridge x3; NTC thermistor
Technology: Advanced Trench FS IGBT
Case: C7
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Topology: IGBT half-bridge x3; NTC thermistor
Technology: Advanced Trench FS IGBT
Case: C7
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Topology: IGBT half-bridge x3; NTC thermistor
Technology: Advanced Trench FS IGBT
Case: C7
Collector current: 300A
Semiconductor structure: transistor/transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 8 шт
товар відсутній
| GD300SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Topology: single transistor
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: single transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Topology: single transistor
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: single transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD300SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Topology: single transistor
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: single transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Topology: single transistor
Technology: Advanced Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Semiconductor structure: single transistor
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD35PJY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
GD35PJY120L3S IGBT modules
GD35PJY120L3S IGBT modules
на замовлення 16 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2890.42 грн |
| GD3600SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 3.6kA
товар відсутній
| GD3600SGX170C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 3.6kA
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Pulsed collector current: 7.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 3.6kA
кількість в упаковці: 1 шт
товар відсутній
| GD3600SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 3.6kA
товар відсутній
| GD3600SGY120C4S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 3.6kA
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Topology: IGBT x3
Mechanical mounting: screw
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 3.6kA
кількість в упаковці: 8 шт
товар відсутній
| GD400HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: C2 62mm
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: C2 62mm
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
товар відсутній
| GD400HFU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: C2 62mm
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: C2 62mm
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній