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DF2B6.8FS(TPL3,T) DF2B6.8FS(TPL3,T) Toshiba Semiconductor and Storage DF2B6.8FS.pdf Description: TVS DIODE 5VWM 8.5VC FSC
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DF2B6.8FS(TPL3,T) DF2B6.8FS(TPL3,T) Toshiba Semiconductor and Storage DF2B6.8FS.pdf Description: TVS DIODE 5VWM 8.5VC FSC
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SSM3J328R,LF SSM3J328R,LF Toshiba Semiconductor and Storage docget.jsp?did=2429&prodName=SSM3J328R Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 16364 шт:
термін постачання 21-31 дні (днів)
11+30.06 грн
17+17.98 грн
100+11.34 грн
500+7.94 грн
1000+7.07 грн
Мінімальне замовлення: 11 шт
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TLP290-4(GB-TP,E) TLP290-4(GB-TP,E) Toshiba Semiconductor and Storage TLP290-4_datasheet_en_20191129.pdf?did=12855&prodName=TLP290-4 Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 91940 шт:
термін постачання 21-31 дні (днів)
3+107.60 грн
10+73.52 грн
100+55.44 грн
500+44.49 грн
1000+42.03 грн
Мінімальне замовлення: 3 шт
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CRS10I30A(TE85L,Q) CRS10I30A(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRS10I30A Description: DIODE SCHOTTKY 30V 1A SFLAT
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CRS10I30B(TE85L,Q) CRS10I30B(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRS10I30B Description: DIODE SCHOTTKY 30V 1A SFLAT
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CRS10I30C(TE85L,Q) CRS10I30C(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=14909&prodName=CRS10I30C Description: DIODE SCHOTTKY 30V 1A SFLAT
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CRS10I40A(TE85L,Q) CRS10I40A(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=14631&prodName=CRS10I40A Description: DIODE SCHOTTKY 40V 1A SFLAT
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CRS10I40B(TE85L,Q) CRS10I40B(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=14633&prodName=CRS10I40B Description: DIODE SCHOTTKY 40V 1A SFLAT
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CRS15I30A(TE85L,Q) CRS15I30A(TE85L,Q) Toshiba Semiconductor and Storage docget.jsp?did=2130&prodName=CRS15I30A Description: DIODE SCHOTTKY 30V 1.5A SFLAT
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TB7101AF(T5L1.2,F) Toshiba Semiconductor and Storage Description: IC REG BUCK 1.2V 1A PS8
Voltage - Input (Min): 2.7V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.2V
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TB7101AF(T5L1.5,F) Toshiba Semiconductor and Storage Description: IC REG BUCK 1.5V 1A PS-8
Voltage - Output (Min/Fixed): 1.5V
Voltage - Input (Min): 2.7V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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TB7101AF(T5L1.8,F) Toshiba Semiconductor and Storage Description: IC REG BUCK 1.8V 1A PS8
Packaging: Tape & Reel (TR)
Output Type: Fixed
Package / Case: 8-SMD, Flat Lead
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.8V
Voltage - Input (Min): 2.8V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
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TB7101AF(T5L3.3,F) Toshiba Semiconductor and Storage Description: IC REG BUCK 3.3V 1A PS-8
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 4.3V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TB7102AF(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=11689&prodName=TB7102AF Description: IC REG BUCK ADJUSTABLE 1A PS8
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 4.5V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TB7106F(T2LPP1,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB7106F Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV
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TB7107FN(TE85L,F) Toshiba Semiconductor and Storage Description: IC REG BUCK ADJ 2A PS-8
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 20V
Frequency - Switching: 380kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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TB7109F(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB7109F Description: IC CONV BUCK DC/DC 0.5A 8SOP-ADV
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TB7110F(TE12L,Q) Toshiba Semiconductor and Storage Description: IC REG BUCK ADJ DL 8SOP-ADV
Voltage - Input (Max): 27V
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.5A, 800mA
Function: Step-Down
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 1.215V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: No
Supplier Device Package: 8-SOP Advance (5x5)
Topology: Buck
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TCV7100AF(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCV7100AF Description: IC REG BUCK ADJ 2.5A SYNC 8SOPA
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TCV7101F(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCV7101F Description: IC REG BUCK ADJ 3.8A 8SOP-ADV
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TCV7102F(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?pid=TCV7102F&lang=en&type=datasheet Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV
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TCV7103AF(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCV7103AF Description: IC REG BUCK ADJ 6A SYNC 8SOP-ADV
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TCV7103F(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?pid=TCV7103F&lang=en&type=datasheet Description: IC REG BUCK ADJ 5A SYNC 8SOP-ADV
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TCV7104FN(TE85L,F) Toshiba Semiconductor and Storage Description: IC REG BUCK ADJ 2A PS-8
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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TCV7106FN(TE85L,F) Toshiba Semiconductor and Storage Description: IC REG BUCK ADJ 2A PS-8
Topology: Buck
Voltage - Input (Max): 5.6V
Frequency - Switching: 550kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 5.6V
Synchronous Rectifier: Both
Supplier Device Package: PS-8 (2.9x2.4)
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TCV7108FN(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=7150&prodName=TCV7108FN Description: IC REG BUCK ADJ 2A PS-8
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 5.6V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.6V
Frequency - Switching: 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TCV7113F(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=10113&prodName=TCV7113F Description: IC REG BUCK ADJ 6A 8SOP-ADV
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TJ15S06M3L(T6L1,NQ TJ15S06M3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TJ15S06M3L Description: MOSFET P-CH 60V 15A DPAK-3
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TJ40S04M3L(T6L1,NQ TJ40S04M3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK-3
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TJ8S06M3L(T6L1,NQ) TJ8S06M3L(T6L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=22588&prodName=TJ8S06M3L Description: MOSFET P-CH 60V 8A DPAK
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TK10A50D(STA4,Q,M) TK10A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK10A50D_datasheet_en_20131101.pdf?did=22026&prodName=TK10A50D Description: MOSFET N-CH 500V 10A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
2+159.02 грн
Мінімальне замовлення: 2 шт
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TK10A55D(STA4,Q,M) TK10A55D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 550V 10A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK10S04K3L(T6L1,NQ TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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TK11A45D(STA4,Q,M) TK11A45D(STA4,Q,M) Toshiba Semiconductor and Storage TK11A45D_datasheet_en_20131101.pdf?did=6742&prodName=TK11A45D Description: MOSFET N-CH 450V 11A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
2+190.67 грн
Мінімальне замовлення: 2 шт
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TK11A50D(STA4,Q,M) TK11A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK11A50D_datasheet_en_20131101.pdf?did=1085&prodName=TK11A50D Description: MOSFET N-CH 500V 11A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+175.64 грн
50+83.79 грн
Мінімальне замовлення: 2 шт
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TK11A55D(STA4,Q,M) TK11A55D(STA4,Q,M) Toshiba Semiconductor and Storage TK11A55D_datasheet_en_20131101.pdf?did=22029&prodName=TK11A55D Description: MOSFET N-CH 550V 11A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK11A60D(STA4,Q,M) TK11A60D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 11A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK12A45D(STA4,Q,M) TK12A45D(STA4,Q,M) Toshiba Semiconductor and Storage TK12A45D_datasheet_en_20131101.pdf?did=4482&prodName=TK12A45D Description: MOSFET N-CH 450V 12A TO220SIS
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
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TK12A50D(STA4,Q,M) TK12A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK12A50D_datasheet_en_20131101.pdf?did=11999&prodName=TK12A50D Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
2+210.45 грн
50+101.25 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK12A53D(STA4,Q,M) TK12A53D(STA4,Q,M) Toshiba Semiconductor and Storage TK12A53D_datasheet_en_20131101.pdf?did=22028&prodName=TK12A53D Description: MOSFET N-CH 525V 12A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK12A55D(STA4,Q,M) TK12A55D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 550V 12A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK12A60D(STA4,Q,M) TK12A60D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
2+242.89 грн
50+118.53 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK12E60U,S1X(S TK12E60U,S1X(S Toshiba Semiconductor and Storage TK12E60U.pdf Description: MOSFET N-CH 600V 12A TO-220AB
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TK13A45D(STA4,Q,M) TK13A45D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=22025&prodName=TK13A45D Description: MOSFET N-CH 450V 13A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
2+178.01 грн
10+142.39 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK13A50DA(STA4,Q,M TK13A50DA(STA4,Q,M Toshiba Semiconductor and Storage TK13A50DA_datasheet_en_20131101.pdf?did=22027&prodName=TK13A50DA Description: MOSFET N-CH 500V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
2+248.43 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK13A50D(STA4,Q,M) TK13A50D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 500V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
2+270.58 грн
50+131.73 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK13A55DA(STA4,QM) TK13A55DA(STA4,QM) Toshiba Semiconductor and Storage TK13A55DA_datasheet_en_20131101.pdf?did=2172&prodName=TK13A55DA Description: MOSFET N-CH 550V 12.5A TO220SIS
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
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TK13E25D,S1X(S TK13E25D,S1X(S Toshiba Semiconductor and Storage docget.jsp?did=11796&prodName=TK13E25D Description: MOSFET N-CH 250V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
2+165.35 грн
10+132.34 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK13J65U(F) TK13J65U(F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK13J65U Description: MOSFET N-CH 650V 13A TO-3PN
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TK14A45DA(STA4,QM) TK14A45DA(STA4,QM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 450V 13.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A
Rds On (Max) @ Id, Vgs: 410mOhm @ 6.8A, 10V
Supplier Device Package: TO-220SIS
Drain to Source Voltage (Vdss): 450 V
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TK14A45D(STA4,Q,M) TK14A45D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 450V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Supplier Device Package: TO-220SIS
Drain to Source Voltage (Vdss): 450 V
товару немає в наявності
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TK14A55D(STA4,Q,M) TK14A55D(STA4,Q,M) Toshiba Semiconductor and Storage TK14A55D_datasheet_en_20131101.pdf?did=22030&prodName=TK14A55D Description: MOSFET N-CH 550V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
2+267.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK15A50D(STA4,Q,M) TK15A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK15A50D_datasheet_en_20131101.pdf?did=12219&prodName=TK15A50D Description: MOSFET N-CH 500V 15A TO220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
товару немає в наявності
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TK15A60D(STA4,Q,M) TK15A60D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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TK15E60U,S1X(S TK15E60U,S1X(S Toshiba Semiconductor and Storage docget.jsp?did=12849&prodName=TK15E60U Description: MOSFET N-CH 600V 15A TO-220AB
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TK16A45D(STA4,Q,M) TK16A45D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 450V 16A TO-220SIS
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TK16A55D(STA4,Q,M) TK16A55D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 550V 16A TO220SIS
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TK17J65U(F) TK17J65U(F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK17J65U Description: MOSFET N-CH 650V 17A TO-3PN
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TK18A50D(STA4,Q,M) TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+322.79 грн
В кошику  од. на суму  грн.
DF2B6.8FS(TPL3,T) DF2B6.8FS.pdf
DF2B6.8FS(TPL3,T)
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
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DF2B6.8FS(TPL3,T) DF2B6.8FS.pdf
DF2B6.8FS(TPL3,T)
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 8.5VC FSC
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SSM3J328R,LF docget.jsp?did=2429&prodName=SSM3J328R
SSM3J328R,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
на замовлення 16364 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.06 грн
17+17.98 грн
100+11.34 грн
500+7.94 грн
1000+7.07 грн
Мінімальне замовлення: 11 шт
В кошику  од. на суму  грн.
TLP290-4(GB-TP,E) TLP290-4_datasheet_en_20191129.pdf?did=12855&prodName=TLP290-4
TLP290-4(GB-TP,E)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 91940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+107.60 грн
10+73.52 грн
100+55.44 грн
500+44.49 грн
1000+42.03 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
CRS10I30A(TE85L,Q) docget.jsp?type=datasheet&lang=en&pid=CRS10I30A
CRS10I30A(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
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CRS10I30B(TE85L,Q) docget.jsp?type=datasheet&lang=en&pid=CRS10I30B
CRS10I30B(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
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CRS10I30C(TE85L,Q) docget.jsp?did=14909&prodName=CRS10I30C
CRS10I30C(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
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CRS10I40A(TE85L,Q) docget.jsp?did=14631&prodName=CRS10I40A
CRS10I40A(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A SFLAT
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CRS10I40B(TE85L,Q) docget.jsp?did=14633&prodName=CRS10I40B
CRS10I40B(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A SFLAT
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CRS15I30A(TE85L,Q) docget.jsp?did=2130&prodName=CRS15I30A
CRS15I30A(TE85L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
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TB7101AF(T5L1.2,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK 1.2V 1A PS8
Voltage - Input (Min): 2.7V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.2V
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TB7101AF(T5L1.5,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK 1.5V 1A PS-8
Voltage - Output (Min/Fixed): 1.5V
Voltage - Input (Min): 2.7V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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TB7101AF(T5L1.8,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK 1.8V 1A PS8
Packaging: Tape & Reel (TR)
Output Type: Fixed
Package / Case: 8-SMD, Flat Lead
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.8V
Voltage - Input (Min): 2.8V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
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TB7101AF(T5L3.3,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK 3.3V 1A PS-8
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 4.3V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TB7102AF(TE85L,F) docget.jsp?did=11689&prodName=TB7102AF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJUSTABLE 1A PS8
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 4.5V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TB7106F(T2LPP1,Q) docget.jsp?type=datasheet&lang=en&pid=TB7106F
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV
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TB7107FN(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2A PS-8
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 20V
Frequency - Switching: 380kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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TB7109F(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TB7109F
Виробник: Toshiba Semiconductor and Storage
Description: IC CONV BUCK DC/DC 0.5A 8SOP-ADV
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TB7110F(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ DL 8SOP-ADV
Voltage - Input (Max): 27V
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 1.5A, 800mA
Function: Step-Down
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 1.215V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: No
Supplier Device Package: 8-SOP Advance (5x5)
Topology: Buck
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TCV7100AF(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TCV7100AF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2.5A SYNC 8SOPA
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TCV7101F(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TCV7101F
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 3.8A 8SOP-ADV
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TCV7102F(TE12L,Q) docget.jsp?pid=TCV7102F&lang=en&type=datasheet
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 3A SYNC 8SOP-ADV
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TCV7103AF(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TCV7103AF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 6A SYNC 8SOP-ADV
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TCV7103F(TE12L,Q) docget.jsp?pid=TCV7103F&lang=en&type=datasheet
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 5A SYNC 8SOP-ADV
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TCV7104FN(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2A PS-8
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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TCV7106FN(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2A PS-8
Topology: Buck
Voltage - Input (Max): 5.6V
Frequency - Switching: 550kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 5.6V
Synchronous Rectifier: Both
Supplier Device Package: PS-8 (2.9x2.4)
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TCV7108FN(TE85L,F) docget.jsp?did=7150&prodName=TCV7108FN
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 2A PS-8
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 2.7V
Voltage - Output (Max): 5.6V
Synchronous Rectifier: Yes
Supplier Device Package: PS-8 (2.9x2.4)
Topology: Buck
Voltage - Input (Max): 5.6V
Frequency - Switching: 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TCV7113F(TE12L,Q) docget.jsp?did=10113&prodName=TCV7113F
Виробник: Toshiba Semiconductor and Storage
Description: IC REG BUCK ADJ 6A 8SOP-ADV
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TJ15S06M3L(T6L1,NQ docget.jsp?type=datasheet&lang=en&pid=TJ15S06M3L
TJ15S06M3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 15A DPAK-3
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TJ40S04M3L(T6L1,NQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK-3
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TJ8S06M3L(T6L1,NQ) docget.jsp?did=22588&prodName=TJ8S06M3L
TJ8S06M3L(T6L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
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TK10A50D(STA4,Q,M) TK10A50D_datasheet_en_20131101.pdf?did=22026&prodName=TK10A50D
TK10A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 10A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.02 грн
Мінімальне замовлення: 2 шт
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TK10A55D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK10A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 10A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK10S04K3L(T6L1,NQ Mosfets_Prod_Guide.pdf
TK10S04K3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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TK11A45D(STA4,Q,M) TK11A45D_datasheet_en_20131101.pdf?did=6742&prodName=TK11A45D
TK11A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 11A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.67 грн
Мінімальне замовлення: 2 шт
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TK11A50D(STA4,Q,M) TK11A50D_datasheet_en_20131101.pdf?did=1085&prodName=TK11A50D
TK11A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 11A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.64 грн
50+83.79 грн
Мінімальне замовлення: 2 шт
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TK11A55D(STA4,Q,M) TK11A55D_datasheet_en_20131101.pdf?did=22029&prodName=TK11A55D
TK11A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 11A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK11A60D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK11A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK12A45D(STA4,Q,M) TK12A45D_datasheet_en_20131101.pdf?did=4482&prodName=TK12A45D
TK12A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 12A TO220SIS
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
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TK12A50D(STA4,Q,M) TK12A50D_datasheet_en_20131101.pdf?did=11999&prodName=TK12A50D
TK12A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.45 грн
50+101.25 грн
Мінімальне замовлення: 2 шт
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TK12A53D(STA4,Q,M) TK12A53D_datasheet_en_20131101.pdf?did=22028&prodName=TK12A53D
TK12A53D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 12A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK12A55D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK12A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 12A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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TK12A60D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK12A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+242.89 грн
50+118.53 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK12E60U,S1X(S TK12E60U.pdf
TK12E60U,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO-220AB
товару немає в наявності
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TK13A45D(STA4,Q,M) docget.jsp?did=22025&prodName=TK13A45D
TK13A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 13A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.01 грн
10+142.39 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK13A50DA(STA4,Q,M TK13A50DA_datasheet_en_20131101.pdf?did=22027&prodName=TK13A50DA
TK13A50DA(STA4,Q,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+248.43 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK13A50D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK13A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+270.58 грн
50+131.73 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK13A55DA(STA4,QM) TK13A55DA_datasheet_en_20131101.pdf?did=2172&prodName=TK13A55DA
TK13A55DA(STA4,QM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 12.5A TO220SIS
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
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TK13E25D,S1X(S docget.jsp?did=11796&prodName=TK13E25D
TK13E25D,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 13A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.35 грн
10+132.34 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK13J65U(F) docget.jsp?type=datasheet&lang=en&pid=TK13J65U
TK13J65U(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13A TO-3PN
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TK14A45DA(STA4,QM) Mosfets_Prod_Guide.pdf
TK14A45DA(STA4,QM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 13.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A
Rds On (Max) @ Id, Vgs: 410mOhm @ 6.8A, 10V
Supplier Device Package: TO-220SIS
Drain to Source Voltage (Vdss): 450 V
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TK14A45D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK14A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Supplier Device Package: TO-220SIS
Drain to Source Voltage (Vdss): 450 V
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TK14A55D(STA4,Q,M) TK14A55D_datasheet_en_20131101.pdf?did=22030&prodName=TK14A55D
TK14A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.41 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TK15A50D(STA4,Q,M) TK15A50D_datasheet_en_20131101.pdf?did=12219&prodName=TK15A50D
TK15A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 15A TO220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
товару немає в наявності
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TK15A60D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK15A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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TK15E60U,S1X(S docget.jsp?did=12849&prodName=TK15E60U
TK15E60U,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO-220AB
товару немає в наявності
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TK16A45D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK16A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 16A TO-220SIS
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TK16A55D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK16A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 16A TO220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK17J65U(F) docget.jsp?type=datasheet&lang=en&pid=TK17J65U
TK17J65U(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17A TO-3PN
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TK18A50D(STA4,Q,M) TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D
TK18A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+322.79 грн
В кошику  од. на суму  грн.
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