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TK10A50D(STA4,Q,M) TK10A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK10A50D_datasheet_en_20131101.pdf?did=22026&prodName=TK10A50D Description: MOSFET N-CH 500V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
2+159.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK10A55D(STA4,Q,M) TK10A55D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 550V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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TK10S04K3L(T6L1,NQ TK10S04K3L(T6L1,NQ Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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TK11A45D(STA4,Q,M) TK11A45D(STA4,Q,M) Toshiba Semiconductor and Storage TK11A45D_datasheet_en_20131101.pdf?did=6742&prodName=TK11A45D Description: MOSFET N-CH 450V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
2+191.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK11A50D(STA4,Q,M) TK11A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK11A50D_datasheet_en_20131101.pdf?did=1085&prodName=TK11A50D Description: MOSFET N-CH 500V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+176.67 грн
50+84.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK11A55D(STA4,Q,M) TK11A55D(STA4,Q,M) Toshiba Semiconductor and Storage TK11A55D_datasheet_en_20131101.pdf?did=22029&prodName=TK11A55D Description: MOSFET N-CH 550V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
товару немає в наявності
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TK11A60D(STA4,Q,M) TK11A60D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
товару немає в наявності
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TK12A45D(STA4,Q,M) TK12A45D(STA4,Q,M) Toshiba Semiconductor and Storage TK12A45D_datasheet_en_20131101.pdf?did=4482&prodName=TK12A45D Description: MOSFET N-CH 450V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TK12A50D(STA4,Q,M) TK12A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK12A50D_datasheet_en_20131101.pdf?did=11999&prodName=TK12A50D Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
2+198.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK12A53D(STA4,Q,M) TK12A53D(STA4,Q,M) Toshiba Semiconductor and Storage TK12A53D_datasheet_en_20131101.pdf?did=22028&prodName=TK12A53D Description: MOSFET N-CH 525V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
товару немає в наявності
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TK12A55D(STA4,Q,M) TK12A55D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 550V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 570mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
товару немає в наявності
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TK12A60D(STA4,Q,M) TK12A60D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
2+273.76 грн
50+133.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK12E60U,S1X(S TK12E60U,S1X(S Toshiba Semiconductor and Storage TK12E60U.pdf Description: MOSFET N-CH 600V 12A TO-220AB
товару немає в наявності
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TK13A45D(STA4,Q,M) TK13A45D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=22025&prodName=TK13A45D Description: MOSFET N-CH 450V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
2+179.06 грн
10+143.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK13A50DA(STA4,Q,M TK13A50DA(STA4,Q,M Toshiba Semiconductor and Storage TK13A50DA_datasheet_en_20131101.pdf?did=22027&prodName=TK13A50DA Description: MOSFET N-CH 500V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
2+242.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK13A50D(STA4,Q,M) TK13A50D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 500V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
2+212.48 грн
50+111.58 грн
100+102.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK13A55DA(STA4,QM) TK13A55DA(STA4,QM) Toshiba Semiconductor and Storage docget.jsp?did=2172&prodName=TK13A55DA Description: MOSFET N-CH 550V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
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TK13E25D,S1X(S TK13E25D,S1X(S Toshiba Semiconductor and Storage docget.jsp?did=11796&prodName=TK13E25D Description: MOSFET N-CH 250V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
2+166.32 грн
10+133.11 грн
Мінімальне замовлення: 2
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TK13J65U(F) TK13J65U(F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK13J65U Description: MOSFET N-CH 650V 13A TO-3PN
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TK14A45DA(STA4,QM) TK14A45DA(STA4,QM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 450V 13.5A TO-220SIS
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TK14A45D(STA4,Q,M) TK14A45D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 450V 14A TO-220SIS
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TK14A55D(STA4,Q,M) TK14A55D(STA4,Q,M) Toshiba Semiconductor and Storage TK14A55D_datasheet_en_20131101.pdf?did=22030&prodName=TK14A55D Description: MOSFET N-CH 550V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
2+304.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK15A50D(STA4,Q,M) TK15A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK15A50D_datasheet_en_20131101.pdf?did=12219&prodName=TK15A50D Description: MOSFET N-CH 500V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
2+282.51 грн
50+152.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK15A60D(STA4,Q,M) TK15A60D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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TK15E60U,S1X(S TK15E60U,S1X(S Toshiba Semiconductor and Storage docget.jsp?did=12849&prodName=TK15E60U Description: MOSFET N-CH 600V 15A TO-220AB
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TK16A45D(STA4,Q,M) TK16A45D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 450V 16A TO-220SIS
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TK16A55D(STA4,Q,M) TK16A55D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 550V 16A TO220SIS
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TK17J65U(F) TK17J65U(F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK17J65U Description: MOSFET N-CH 650V 17A TO-3PN
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TK18A50D(STA4,Q,M) TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
2+293.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK18E10K3,S1X(S TK18E10K3,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 100V 18A TO-220AB
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TK19A45D(STA4,Q,M) TK19A45D(STA4,Q,M) Toshiba Semiconductor and Storage TK19A45D_datasheet_en_20131101.pdf?did=3454&prodName=TK19A45D Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
2+259.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK20A25D,S5Q(M TK20A25D,S5Q(M Toshiba Semiconductor and Storage docget.jsp?did=6798&prodName=TK20A25D Description: MOSFET N-CH 250V 20A TO220SIS
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TK20E60U,S1X(S TK20E60U,S1X(S Toshiba Semiconductor and Storage docget.jsp?did=12851&prodName=TK20E60U Description: MOSFET N-CH 600V 20A TO-220AB
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TK20P04M1,RQ(S TK20P04M1,RQ(S Toshiba Semiconductor and Storage TK20P04M1_datasheet_en_20160316.pdf?did=3451&prodName=TK20P04M1 Description: MOSFET N-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V
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TK20S04K3L(T6L1,NQ TK20S04K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=10603&prodName=TK20S04K3L Description: MOSFET N-CH 40V 20A DPAK-3
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TK20S06K3L(T6L1,NQ TK20S06K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11263&prodName=TK20S06K3L Description: MOSFET N-CH 60V 20A DPAK
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TK25E06K3,S1X(S TK25E06K3,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 25A TO-220AB
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TK2A65D(STA4,Q,M) TK2A65D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 650V 2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
3+117.78 грн
50+59.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK2P60D(TE16L1,NQ) TK2P60D(TE16L1,NQ) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
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TK2Q60D(Q) TK2Q60D(Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
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TK30S06K3L(T6L1,NQ TK30S06K3L(T6L1,NQ Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
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TK35E10K3(S1SS-Q) TK35E10K3(S1SS-Q) Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 35A TO-220AB
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TK3A60DA(STA4,Q,M) TK3A60DA(STA4,Q,M) Toshiba Semiconductor and Storage TK3A60DA_datasheet_en_20131101.pdf?did=22751&prodName=TK3A60DA Description: MOSFET N-CH 600V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
4+98.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TK3A65DA(STA4,QM) TK3A65DA(STA4,QM) Toshiba Semiconductor and Storage TK3A65DA_datasheet_en_20131101.pdf?did=2338&prodName=TK3A65DA Description: MOSFET N-CH 650V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.51Ohm @ 1.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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TK3A65D(STA4,Q,M) TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK3A65D Description: MOSFET N-CH 650V 3A TO-220SIS
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TK40E10K3,S1X(S TK40E10K3,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
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TK40P03M1(T6RDS-Q) TK40P03M1(T6RDS-Q) Toshiba Semiconductor and Storage TK40P03M1_datasheet_en_20160217.pdf?did=1366&prodName=TK40P03M1 Description: MOSFET N-CH 30V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V
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TK40S10K3Z(T6L1,NQ TK40S10K3Z(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=1584&prodName=TK40S10K3Z Description: MOSFET N-CH 100V 40A DPAK-3
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TK45P03M1,RQ(S TK45P03M1,RQ(S Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK45P03M1 Description: MOSFET N-CH 30V 45A DPAK-3
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TK4A50D(STA4,Q,M) TK4A50D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=22671&prodName=TK4A50D Description: MOSFET N-CH 500V 4A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
5+64.46 грн
50+51.80 грн
100+37.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TK4A53D(STA4,Q,M) TK4A53D(STA4,Q,M) Toshiba Semiconductor and Storage TK4A53D_datasheet_en_20131101.pdf?did=603&prodName=TK4A53D Description: MOSFET N-CH 525V 4A TO220SIS
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TK4A55DA(STA4,Q,M) TK4A55DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=654&prodName=TK4A55DA Description: MOSFET N-CH 550V 3.5A TO220SIS
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TK4A55D(STA4,Q,M) TK4A55D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=924&prodName=TK4A55D Description: MOSFET N-CH 550V 4A TO220SIS
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TK4A60DB(STA4,Q,M) TK4A60DB(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=664&prodName=TK4A60DB Description: MOSFET N-CH 600V 3.7A TO220SIS
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TK4A65DA(STA4,Q,M) TK4A65DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=2374&prodName=TK4A65DA Description: MOSFET N-CH 650V 3.5A TO220SIS
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TK4P50D(T6RSS-Q) TK4P50D(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK4P50D Description: MOSFET N-CH 500V 4A DPAK-3
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TK4P55DA(T6RSS-Q) TK4P55DA(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK4P55DA Description: MOSFET N-CH 550V 3.5A DPAK-3
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TK4P55D(T6RSS-Q) TK4P55D(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK4P55D Description: MOSFET N-CH 550V 4A DPAK-3
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TK4P60DA(T6RSS-Q) TK4P60DA(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?did=2286&prodName=TK4P60DA Description: MOSFET N-CH 600V 3.5A DPAK-3
товару немає в наявності
В кошику  од. на суму  грн.
TK4P60DB(T6RSS-Q) TK4P60DB(T6RSS-Q) Toshiba Semiconductor and Storage docget.jsp?did=2438&prodName=TK4P60DB Description: MOSFET N-CH 600V 3.7A DPAK
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TK10A50D(STA4,Q,M) TK10A50D_datasheet_en_20131101.pdf?did=22026&prodName=TK10A50D
TK10A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK10A55D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK10A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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TK10S04K3L(T6L1,NQ Mosfets_Prod_Guide.pdf
TK10S04K3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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TK11A45D(STA4,Q,M) TK11A45D_datasheet_en_20131101.pdf?did=6742&prodName=TK11A45D
TK11A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK11A50D(STA4,Q,M) TK11A50D_datasheet_en_20131101.pdf?did=1085&prodName=TK11A50D
TK11A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+176.67 грн
50+84.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK11A55D(STA4,Q,M) TK11A55D_datasheet_en_20131101.pdf?did=22029&prodName=TK11A55D
TK11A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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TK11A60D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK11A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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TK12A45D(STA4,Q,M) TK12A45D_datasheet_en_20131101.pdf?did=4482&prodName=TK12A45D
TK12A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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TK12A50D(STA4,Q,M) TK12A50D_datasheet_en_20131101.pdf?did=11999&prodName=TK12A50D
TK12A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK12A53D(STA4,Q,M) TK12A53D_datasheet_en_20131101.pdf?did=22028&prodName=TK12A53D
TK12A53D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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TK12A55D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK12A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 570mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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TK12A60D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK12A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+273.76 грн
50+133.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK12E60U,S1X(S TK12E60U.pdf
TK12E60U,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO-220AB
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TK13A45D(STA4,Q,M) docget.jsp?did=22025&prodName=TK13A45D
TK13A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.06 грн
10+143.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK13A50DA(STA4,Q,M TK13A50DA_datasheet_en_20131101.pdf?did=22027&prodName=TK13A50DA
TK13A50DA(STA4,Q,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+242.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK13A50D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK13A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+212.48 грн
50+111.58 грн
100+102.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK13A55DA(STA4,QM) docget.jsp?did=2172&prodName=TK13A55DA
TK13A55DA(STA4,QM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 12.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
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TK13E25D,S1X(S docget.jsp?did=11796&prodName=TK13E25D
TK13E25D,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.32 грн
10+133.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK13J65U(F) docget.jsp?type=datasheet&lang=en&pid=TK13J65U
TK13J65U(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13A TO-3PN
товару немає в наявності
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TK14A45DA(STA4,QM) Mosfets_Prod_Guide.pdf
TK14A45DA(STA4,QM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 13.5A TO-220SIS
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В кошику  од. на суму  грн.
TK14A45D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK14A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 14A TO-220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK14A55D(STA4,Q,M) TK14A55D_datasheet_en_20131101.pdf?did=22030&prodName=TK14A55D
TK14A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 14A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK15A50D(STA4,Q,M) TK15A50D_datasheet_en_20131101.pdf?did=12219&prodName=TK15A50D
TK15A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.51 грн
50+152.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK15A60D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK15A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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TK15E60U,S1X(S docget.jsp?did=12849&prodName=TK15E60U
TK15E60U,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15A TO-220AB
товару немає в наявності
В кошику  од. на суму  грн.
TK16A45D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK16A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 16A TO-220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK16A55D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK16A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 16A TO220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK17J65U(F) docget.jsp?type=datasheet&lang=en&pid=TK17J65U
TK17J65U(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17A TO-3PN
товару немає в наявності
В кошику  од. на суму  грн.
TK18A50D(STA4,Q,M) TK18A50D_datasheet_en_20131101.pdf?did=692&prodName=TK18A50D
TK18A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+293.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK18E10K3,S1X(S Mosfets_Prod_Guide.pdf
TK18E10K3,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 18A TO-220AB
товару немає в наявності
В кошику  од. на суму  грн.
TK19A45D(STA4,Q,M) TK19A45D_datasheet_en_20131101.pdf?did=3454&prodName=TK19A45D
TK19A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+259.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK20A25D,S5Q(M docget.jsp?did=6798&prodName=TK20A25D
TK20A25D,S5Q(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A TO220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK20E60U,S1X(S docget.jsp?did=12851&prodName=TK20E60U
TK20E60U,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO-220AB
товару немає в наявності
В кошику  од. на суму  грн.
TK20P04M1,RQ(S TK20P04M1_datasheet_en_20160316.pdf?did=3451&prodName=TK20P04M1
TK20P04M1,RQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TK20S04K3L(T6L1,NQ docget.jsp?did=10603&prodName=TK20S04K3L
TK20S04K3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A DPAK-3
товару немає в наявності
В кошику  од. на суму  грн.
TK20S06K3L(T6L1,NQ docget.jsp?did=11263&prodName=TK20S06K3L
TK20S06K3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A DPAK
товару немає в наявності
В кошику  од. на суму  грн.
TK25E06K3,S1X(S Mosfets_Prod_Guide.pdf
TK25E06K3,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A TO-220AB
товару немає в наявності
В кошику  од. на суму  грн.
TK2A65D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK2A65D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.78 грн
50+59.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK2P60D(TE16L1,NQ) Mosfets_Prod_Guide.pdf
TK2P60D(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TK2Q60D(Q) Mosfets_Prod_Guide.pdf
TK2Q60D(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TK30S06K3L(T6L1,NQ Mosfets_Prod_Guide.pdf
TK30S06K3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TK35E10K3(S1SS-Q)
TK35E10K3(S1SS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 35A TO-220AB
товару немає в наявності
В кошику  од. на суму  грн.
TK3A60DA(STA4,Q,M) TK3A60DA_datasheet_en_20131101.pdf?did=22751&prodName=TK3A60DA
TK3A60DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TK3A65DA(STA4,QM) TK3A65DA_datasheet_en_20131101.pdf?did=2338&prodName=TK3A65DA
TK3A65DA(STA4,QM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.51Ohm @ 1.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TK3A65D(STA4,Q,M) docget.jsp?type=datasheet&lang=en&pid=TK3A65D
TK3A65D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 3A TO-220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK40E10K3,S1X(S Mosfets_Prod_Guide.pdf
TK40E10K3,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TK40P03M1(T6RDS-Q) TK40P03M1_datasheet_en_20160217.pdf?did=1366&prodName=TK40P03M1
TK40P03M1(T6RDS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TK40S10K3Z(T6L1,NQ docget.jsp?did=1584&prodName=TK40S10K3Z
TK40S10K3Z(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A DPAK-3
товару немає в наявності
В кошику  од. на суму  грн.
TK45P03M1,RQ(S docget.jsp?type=datasheet&lang=en&pid=TK45P03M1
TK45P03M1,RQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A DPAK-3
товару немає в наявності
В кошику  од. на суму  грн.
TK4A50D(STA4,Q,M) docget.jsp?did=22671&prodName=TK4A50D
TK4A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 4A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+64.46 грн
50+51.80 грн
100+37.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TK4A53D(STA4,Q,M) TK4A53D_datasheet_en_20131101.pdf?did=603&prodName=TK4A53D
TK4A53D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 4A TO220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK4A55DA(STA4,Q,M) docget.jsp?did=654&prodName=TK4A55DA
TK4A55DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 3.5A TO220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK4A55D(STA4,Q,M) docget.jsp?did=924&prodName=TK4A55D
TK4A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 4A TO220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK4A60DB(STA4,Q,M) docget.jsp?did=664&prodName=TK4A60DB
TK4A60DB(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A TO220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK4A65DA(STA4,Q,M) docget.jsp?did=2374&prodName=TK4A65DA
TK4A65DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 3.5A TO220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TK4P50D(T6RSS-Q) docget.jsp?type=datasheet&lang=en&pid=TK4P50D
TK4P50D(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 4A DPAK-3
товару немає в наявності
В кошику  од. на суму  грн.
TK4P55DA(T6RSS-Q) docget.jsp?type=datasheet&lang=en&pid=TK4P55DA
TK4P55DA(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 3.5A DPAK-3
товару немає в наявності
В кошику  од. на суму  грн.
TK4P55D(T6RSS-Q) docget.jsp?type=datasheet&lang=en&pid=TK4P55D
TK4P55D(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 4A DPAK-3
товару немає в наявності
В кошику  од. на суму  грн.
TK4P60DA(T6RSS-Q) docget.jsp?did=2286&prodName=TK4P60DA
TK4P60DA(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.5A DPAK-3
товару немає в наявності
В кошику  од. на суму  грн.
TK4P60DB(T6RSS-Q) docget.jsp?did=2438&prodName=TK4P60DB
TK4P60DB(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A DPAK
товару немає в наявності
В кошику  од. на суму  грн.
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