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TK50E06K3A,S1X(S TK50E06K3A,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 50A TO-220AB
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TK50E06K3(S1SS-Q) TK50E06K3(S1SS-Q) Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 50A TO-220AB
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TK50E08K3,S1X(S TK50E08K3,S1X(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 75V 50A TO220-3
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TK50E10K3(S1SS-Q) Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 50A TO-220AB
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TK50J60U(Q) TK50J60U(Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK50J60U Description: MOSFET N-CH 600V 50A TO-3PN
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TK5A45DA(STA4,Q,M) TK5A45DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=6321&prodName=TK5A45DA Description: MOSFET N-CH 450V 4.5A TO-220SIS
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TK5A53D(STA4,Q,M) TK5A53D(STA4,Q,M) Toshiba Semiconductor and Storage TK5A53D_datasheet_en_20131101.pdf?did=694&prodName=TK5A53D Description: MOSFET N-CH 525V 5A TO220SIS
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TK5A55D(STA4,Q,M) TK5A55D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=824&prodName=TK5A55D Description: MOSFET N-CH 550V 5A TO-220SIS
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TK5A60D(STA4,Q,M) TK5A60D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=2376&prodName=TK5A60D Description: MOSFET N-CH 600V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
3+154.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK5A65DA(STA4,Q,M) TK5A65DA(STA4,Q,M) Toshiba Semiconductor and Storage TK5A65DA_datasheet_en_20140105.pdf?did=6132&prodName=TK5A65DA Description: MOSFET N-CH 650V 4.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
2+171.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK60E08K3,S1X(S TK60E08K3,S1X(S Toshiba Semiconductor and Storage Description: MOSFET N-CH 75V 60A TO220-3
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TK60P03M1,RQ(S TK60P03M1,RQ(S Toshiba Semiconductor and Storage docget.jsp?did=7131&prodName=TK60P03M1 Description: MOSFET N-CH 30V 60A DPAK
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TK65S04K3L(T6L1,NQ TK65S04K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=11262&prodName=TK65S04K3L Description: MOSFET N-CH 40V 65A DPAK-3
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TK6A45DA(STA4,Q,M) TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=8900&prodName=TK6A45DA Description: MOSFET N-CH 450V 5.5A TO220SIS
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TK6A50D(STA4,Q,M) TK6A50D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=1082&prodName=TK6A50D Description: MOSFET N-CH 500V 6A TO220SIS
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TK6A53D(STA4,Q,M) TK6A53D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=703&prodName=TK6A53D Description: MOSFET N-CH 525V 6A TO220SIS
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TK6A55DA(STA4,Q,M) TK6A55DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=927&prodName=TK6A55DA Description: MOSFET N-CH 550V 5.5A TO220SIS
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TK7A45DA(STA4,Q,M) TK7A45DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=4484&prodName=TK7A45DA Description: MOSFET N-CH 450V 6.5A TO-220SIS
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TK7A50D(STA4,Q,M) TK7A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK7A50D_datasheet_en_20131101.pdf?did=21793&prodName=TK7A50D Description: MOSFET N-CH 500V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
4+104.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TK7A55D(STA4,Q,M) TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=2384&prodName=TK7A55D Description: MOSFET N-CH 550V 7A TO-220SIS
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TK7A65D(STA4,Q,M) TK7A65D(STA4,Q,M) Toshiba Semiconductor and Storage TK7A65D_datasheet_en_20131101.pdf?did=2386&prodName=TK7A65D Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
3+154.39 грн
10+123.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK80S04K3L(T6L1,NQ TK80S04K3L(T6L1,NQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 10 V
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TK80S06K3L(T6L1,NQ TK80S06K3L(T6L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=10574&prodName=TK80S06K3L Description: MOSFET N-CH 60V 80A DPAK
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TK8A45DA(STA4,Q,M) TK8A45DA(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 450V 7.5A TO-220SIS
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TK8A45D(STA4,Q,M) TK8A45D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=6102&prodName=TK8A45D Description: MOSFET N-CH 450V 8A TO220SIS
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TK8A50DA(STA4,Q,M) TK8A50DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=2399&prodName=TK8A50DA Description: MOSFET N-CH 500V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.04Ohm @ 3.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
2+159.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK8A55DA(STA4,Q,M) TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage TK8A55DA_datasheet_en_20131101.pdf?did=2380&prodName=TK8A55DA Description: MOSFET N-CH 550V 7.5A TO220SIS
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TK8A60DA(STA4,Q,M) TK8A60DA(STA4,Q,M) Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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TK9A45D(STA4,Q,M) TK9A45D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=4465&prodName=TK9A45D Description: MOSFET N-CH 450V 9A TO-220SIS
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TK9A55DA(STA4,Q,M) TK9A55DA(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9A55DA Description: MOSFET N-CH 550V 8.5A TO-220SIS
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TK9A60D(STA4,Q,M) TK9A60D(STA4,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=829&prodName=TK9A60D Description: MOSFET N-CH 600V 9A TO-220SIS
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TPC6008-H(TE85L,FM Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC6008-H Description: MOSFET N-CH 30V 5.9A VS6
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TPC6009-H(TE85L,FM Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC6009-H Description: MOSFET N-CH 40V 5.3A VS6
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TPC6010-H(TE85L,FM TPC6010-H(TE85L,FM Toshiba Semiconductor and Storage docget.jsp?did=6418&prodName=TPC6010-H Description: MOSFET N-CH 60V 6.1A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
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TPC6011(TE85L,F,M) TPC6011(TE85L,F,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 6A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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TPC6012(TE85L,F,M) TPC6012(TE85L,F,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 20V 6A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
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TPC6110(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC6110 Description: MOSFET P-CH 30V 4.5A VS6
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TPC6113(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC6113 Description: MOSFET P-CH 20V 5A VS6
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TPC8062-H,LQ(CM TPC8062-H,LQ(CM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPC8065-H,LQ(S TPC8065-H,LQ(S Toshiba Semiconductor and Storage TPC8065-H_datasheet_en_20140214.pdf?did=6304&prodName=TPC8065-H Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 6.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
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TPC8066-H,LQ(S TPC8066-H,LQ(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
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TPC8067-H,LQ(S TPC8067-H,LQ(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 10 V
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TPC8092,LQ(S TPC8092,LQ(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
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TPC8120(TE12L,Q,M) TPC8120(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8120 Description: MOSFET P-CH 30V 18A 8SOP
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TPC8123(TE12L,Q,M) TPC8123(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8123 Description: MOSFET P-CH 30V 11A 8SOP
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TPC8124(TE12L,Q,M) TPC8124(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8124 Description: MOSFET P-CH 40V 12A 8SOP
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TPC8126,LQ(CM TPC8126,LQ(CM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
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TPC8127,LQ(M TPC8127,LQ(M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8127 Description: MOSFET P-CH 30V 13A 8SOP
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TPC8128(TE12L,Q,M) TPC8128(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8128 Description: MOSFET P-CH 30V 16A 8SOP
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TPC8221-H,LQ(S TPC8221-H,LQ(S Toshiba Semiconductor and Storage TPC8221-H.pdf Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
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TPC8223-H,LQ(S TPC8223-H,LQ(S Toshiba Semiconductor and Storage TPC8223-H_datasheet_en_20140227.pdf?did=6598&prodName=TPC8223-H Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
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TPC8407,LQ(S TPC8407,LQ(S Toshiba Semiconductor and Storage TPC8407_datasheet_en_20140107.pdf?did=7369&prodName=TPC8407 Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
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TPC8A05-H(TE12L,QM TPC8A05-H(TE12L,QM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
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TPC8A06-H(TE12LQM) TPC8A06-H(TE12LQM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 12A 8SOP
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TPCA8055-H,LQ(M TPCA8055-H,LQ(M Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 56A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Power Dissipation (Max): 1.6W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
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TPCA8056-H,LQ(M TPCA8056-H,LQ(M Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 24A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
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TPCA8057-H,LQ(M TPCA8057-H,LQ(M Toshiba Semiconductor and Storage TPCA8057-H_datasheet_en_20140304.pdf?did=2576&prodName=TPCA8057-H Description: MOSFET N-CH 30V 42A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V
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TPCA8062-H,LQ(CM TPCA8062-H,LQ(CM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
товару немає в наявності
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TPCA8064-H,LQ(CM TPCA8064-H,LQ(CM Toshiba Semiconductor and Storage docget.jsp?did=2519&prodName=TPCA8064-H Description: MOSFET N-CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
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TPCA8065-H,LQ(S TPCA8065-H,LQ(S Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 10V
Power Dissipation (Max): 1.6W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
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TK50E06K3A,S1X(S Mosfets_Prod_Guide.pdf
TK50E06K3A,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 50A TO-220AB
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TK50E06K3(S1SS-Q)
TK50E06K3(S1SS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 50A TO-220AB
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TK50E08K3,S1X(S Mosfets_Prod_Guide.pdf
TK50E08K3,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 50A TO220-3
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TK50E10K3(S1SS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 50A TO-220AB
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TK50J60U(Q) docget.jsp?type=datasheet&lang=en&pid=TK50J60U
TK50J60U(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 50A TO-3PN
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TK5A45DA(STA4,Q,M) docget.jsp?did=6321&prodName=TK5A45DA
TK5A45DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 4.5A TO-220SIS
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TK5A53D(STA4,Q,M) TK5A53D_datasheet_en_20131101.pdf?did=694&prodName=TK5A53D
TK5A53D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 5A TO220SIS
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TK5A55D(STA4,Q,M) docget.jsp?did=824&prodName=TK5A55D
TK5A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 5A TO-220SIS
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TK5A60D(STA4,Q,M) docget.jsp?did=2376&prodName=TK5A60D
TK5A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.39 грн
Мінімальне замовлення: 3
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TK5A65DA(STA4,Q,M) TK5A65DA_datasheet_en_20140105.pdf?did=6132&prodName=TK5A65DA
TK5A65DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 4.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+171.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK60E08K3,S1X(S
TK60E08K3,S1X(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 60A TO220-3
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TK60P03M1,RQ(S docget.jsp?did=7131&prodName=TK60P03M1
TK60P03M1,RQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A DPAK
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TK65S04K3L(T6L1,NQ docget.jsp?did=11262&prodName=TK65S04K3L
TK65S04K3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK-3
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TK6A45DA(STA4,Q,M) docget.jsp?did=8900&prodName=TK6A45DA
TK6A45DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 5.5A TO220SIS
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TK6A50D(STA4,Q,M) docget.jsp?did=1082&prodName=TK6A50D
TK6A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 6A TO220SIS
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TK6A53D(STA4,Q,M) docget.jsp?did=703&prodName=TK6A53D
TK6A53D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 6A TO220SIS
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TK6A55DA(STA4,Q,M) docget.jsp?did=927&prodName=TK6A55DA
TK6A55DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 5.5A TO220SIS
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TK7A45DA(STA4,Q,M) docget.jsp?did=4484&prodName=TK7A45DA
TK7A45DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 6.5A TO-220SIS
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TK7A50D(STA4,Q,M) TK7A50D_datasheet_en_20131101.pdf?did=21793&prodName=TK7A50D
TK7A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+104.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TK7A55D(STA4,Q,M) docget.jsp?did=2384&prodName=TK7A55D
TK7A55D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 7A TO-220SIS
товару немає в наявності
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TK7A65D(STA4,Q,M) TK7A65D_datasheet_en_20131101.pdf?did=2386&prodName=TK7A65D
TK7A65D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.39 грн
10+123.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK80S04K3L(T6L1,NQ
TK80S04K3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 10 V
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TK80S06K3L(T6L1,NQ docget.jsp?did=10574&prodName=TK80S06K3L
TK80S06K3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 80A DPAK
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TK8A45DA(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK8A45DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 7.5A TO-220SIS
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TK8A45D(STA4,Q,M) docget.jsp?did=6102&prodName=TK8A45D
TK8A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 8A TO220SIS
товару немає в наявності
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TK8A50DA(STA4,Q,M) docget.jsp?did=2399&prodName=TK8A50DA
TK8A50DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.04Ohm @ 3.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK8A55DA(STA4,Q,M) TK8A55DA_datasheet_en_20131101.pdf?did=2380&prodName=TK8A55DA
TK8A55DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 7.5A TO220SIS
товару немає в наявності
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TK8A60DA(STA4,Q,M)
TK8A60DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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TK9A45D(STA4,Q,M) docget.jsp?did=4465&prodName=TK9A45D
TK9A45D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 9A TO-220SIS
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TK9A55DA(STA4,Q,M) docget.jsp?type=datasheet&lang=en&pid=TK9A55DA
TK9A55DA(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 8.5A TO-220SIS
товару немає в наявності
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TK9A60D(STA4,Q,M) docget.jsp?did=829&prodName=TK9A60D
TK9A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9A TO-220SIS
товару немає в наявності
В кошику  од. на суму  грн.
TPC6008-H(TE85L,FM docget.jsp?type=datasheet&lang=en&pid=TPC6008-H
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 5.9A VS6
товару немає в наявності
В кошику  од. на суму  грн.
TPC6009-H(TE85L,FM docget.jsp?type=datasheet&lang=en&pid=TPC6009-H
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 5.3A VS6
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В кошику  од. на суму  грн.
TPC6010-H(TE85L,FM docget.jsp?did=6418&prodName=TPC6010-H
TPC6010-H(TE85L,FM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6.1A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
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TPC6011(TE85L,F,M) Mosfets_Prod_Guide.pdf
TPC6011(TE85L,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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TPC6012(TE85L,F,M) Mosfets_Prod_Guide.pdf
TPC6012(TE85L,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 6A VS-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: VS-6 (2.9x2.8)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
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TPC6110(TE85L,F,M) docget.jsp?type=datasheet&lang=en&pid=TPC6110
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4.5A VS6
товару немає в наявності
В кошику  од. на суму  грн.
TPC6113(TE85L,F,M) docget.jsp?type=datasheet&lang=en&pid=TPC6113
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A VS6
товару немає в наявності
В кошику  од. на суму  грн.
TPC8062-H,LQ(CM Mosfets_Prod_Guide.pdf
TPC8062-H,LQ(CM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPC8065-H,LQ(S TPC8065-H_datasheet_en_20140214.pdf?did=6304&prodName=TPC8065-H
TPC8065-H,LQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 6.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
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В кошику  од. на суму  грн.
TPC8066-H,LQ(S Mosfets_Prod_Guide.pdf
TPC8066-H,LQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
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TPC8067-H,LQ(S Mosfets_Prod_Guide.pdf
TPC8067-H,LQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 10 V
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TPC8092,LQ(S Mosfets_Prod_Guide.pdf
TPC8092,LQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
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TPC8120(TE12L,Q,M) docget.jsp?type=datasheet&lang=en&pid=TPC8120
TPC8120(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8SOP
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TPC8123(TE12L,Q,M) docget.jsp?type=datasheet&lang=en&pid=TPC8123
TPC8123(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 11A 8SOP
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TPC8124(TE12L,Q,M) docget.jsp?type=datasheet&lang=en&pid=TPC8124
TPC8124(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 12A 8SOP
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TPC8126,LQ(CM Mosfets_Prod_Guide.pdf
TPC8126,LQ(CM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
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TPC8127,LQ(M docget.jsp?type=datasheet&lang=en&pid=TPC8127
TPC8127,LQ(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 13A 8SOP
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TPC8128(TE12L,Q,M) docget.jsp?type=datasheet&lang=en&pid=TPC8128
TPC8128(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 16A 8SOP
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TPC8221-H,LQ(S TPC8221-H.pdf
TPC8221-H,LQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
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TPC8223-H,LQ(S TPC8223-H_datasheet_en_20140227.pdf?did=6598&prodName=TPC8223-H
TPC8223-H,LQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
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TPC8407,LQ(S TPC8407_datasheet_en_20140107.pdf?did=7369&prodName=TPC8407
TPC8407,LQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 9A/7.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Part Status: Obsolete
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TPC8A05-H(TE12L,QM Mosfets_Prod_Guide.pdf
TPC8A05-H(TE12L,QM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 5A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
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TPC8A06-H(TE12LQM) Mosfets_Prod_Guide.pdf
TPC8A06-H(TE12LQM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 12A 8SOP
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TPCA8055-H,LQ(M Mosfets_Prod_Guide.pdf
TPCA8055-H,LQ(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 56A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Power Dissipation (Max): 1.6W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
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TPCA8056-H,LQ(M Mosfets_Prod_Guide.pdf
TPCA8056-H,LQ(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 48A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 24A, 10V
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
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TPCA8057-H,LQ(M TPCA8057-H_datasheet_en_20140304.pdf?did=2576&prodName=TPCA8057-H
TPCA8057-H,LQ(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 42A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 10 V
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TPCA8062-H,LQ(CM Mosfets_Prod_Guide.pdf
TPCA8062-H,LQ(CM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPCA8064-H,LQ(CM docget.jsp?did=2519&prodName=TPCA8064-H
TPCA8064-H,LQ(CM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
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TPCA8065-H,LQ(S Mosfets_Prod_Guide.pdf
TPCA8065-H,LQ(S
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 10V
Power Dissipation (Max): 1.6W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
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