Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 34 з 217
Фото | Назва | Виробник | Інформація |
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TK18A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 18A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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TK18E10K3,S1X(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 18A TO-220AB |
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TK19A45D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 450V 19A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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TK20A25D,S5Q(M | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 250V 20A TO220SIS |
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TK20E60U,S1X(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 20A TO-220AB |
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TK20P04M1,RQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V |
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TK20S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 40V 20A DPAK-3 |
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TK20S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 20A DPAK |
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TK25E06K3,S1X(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 25A TO-220AB |
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TK2A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 2A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TK2P60D(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 2A PW-MOLD Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: PW-MOLD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
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TK2Q60D(Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 2A PW-MOLD2 Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: PW-MOLD2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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TK30S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 30A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V |
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TK35E10K3(S1SS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 35A TO-220AB |
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TK3A60DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 2.5A TO-220SIS |
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TK3A65DA(STA4,QM) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 2.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 2.51Ohm @ 1.3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
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TK3A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 650V 3A TO-220SIS |
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TK40E10K3,S1X(S | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 40A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-3 Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V |
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TK40P03M1(T6RDS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 40A DPAK |
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TK40S10K3Z(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 40A DPAK-3 |
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TK45P03M1,RQ(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 45A DPAK-3 |
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TK4A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 4A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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TK4A53D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 525V 4A TO220SIS |
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TK4A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 3.5A TO220SIS |
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TK4A55D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 4A TO220SIS |
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TK4A60DB(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 3.7A TO220SIS |
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TK4A65DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 650V 3.5A TO220SIS |
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TK4P50D(T6RSS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 500V 4A DPAK-3 |
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TK4P55DA(T6RSS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 3.5A DPAK-3 |
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TK4P55D(T6RSS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 4A DPAK-3 |
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TK4P60DA(T6RSS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 3.5A DPAK-3 |
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TK4P60DB(T6RSS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 3.7A DPAK |
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TK50E06K3A,S1X(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 50A TO-220AB |
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TK50E06K3(S1SS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 50A TO-220AB |
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TK50E08K3,S1X(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 75V 50A TO220-3 |
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TK50E10K3(S1SS-Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 50A TO-220AB |
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TK50J60U(Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 600V 50A TO-3PN |
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TK5A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 450V 4.5A TO-220SIS |
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TK5A53D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 525V 5A TO220SIS |
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TK5A55D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 5A TO-220SIS |
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TK5A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TK5A65DA(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 4.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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TK60E08K3,S1X(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 75V 60A TO220-3 |
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TK60P03M1,RQ(S | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 60A DPAK |
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TK60S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 60A DPAK |
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TK65S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 40V 65A DPAK-3 |
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TK6A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 450V 5.5A TO220SIS |
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TK6A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 500V 6A TO220SIS |
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TK6A53D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 525V 6A TO220SIS |
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TK6A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 5.5A TO220SIS |
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TK7A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 450V 6.5A TO-220SIS |
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TK7A50D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 500V 7A TO220SIS |
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TK7A55D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 7A TO-220SIS |
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TK7A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 7A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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TK80S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 10 V |
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TK80S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 80A DPAK |
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TK8A45DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 450V 7.5A TO-220SIS |
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TK8A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 450V 8A TO220SIS |
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TK8A50DA(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 7.5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 1.04Ohm @ 3.8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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TK8A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 550V 7.5A TO220SIS |
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TK18A50D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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2+ | 220.22 грн |
TK18E10K3,S1X(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 18A TO-220AB
Description: MOSFET N-CH 100V 18A TO-220AB
товар відсутній
TK19A45D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 450V 19A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 9.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 232.34 грн |
TK20A25D,S5Q(M |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A TO220SIS
Description: MOSFET N-CH 250V 20A TO220SIS
товар відсутній
TK20E60U,S1X(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO-220AB
Description: MOSFET N-CH 600V 20A TO-220AB
товар відсутній
TK20P04M1,RQ(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V
Description: MOSFET N-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 10 V
товар відсутній
TK20S04K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A DPAK-3
Description: MOSFET N-CH 40V 20A DPAK-3
товар відсутній
TK20S06K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A DPAK
Description: MOSFET N-CH 60V 20A DPAK
товар відсутній
TK25E06K3,S1X(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A TO-220AB
Description: MOSFET N-CH 60V 25A TO-220AB
товар відсутній
TK2A65D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Description: MOSFET N-CH 650V 2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 94.08 грн |
10+ | 73.64 грн |
TK2P60D(TE16L1,NQ) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 600V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
товар відсутній
TK2Q60D(Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 600V 2A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.87 грн |
10+ | 49.76 грн |
TK30S06K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Description: MOSFET N-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
товар відсутній
TK35E10K3(S1SS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 35A TO-220AB
Description: MOSFET N-CH 100V 35A TO-220AB
товар відсутній
TK3A60DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2.5A TO-220SIS
Description: MOSFET N-CH 600V 2.5A TO-220SIS
товар відсутній
TK3A65DA(STA4,QM) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.51Ohm @ 1.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 650V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.51Ohm @ 1.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товар відсутній
TK3A65D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 3A TO-220SIS
Description: MOSFET N-CH 650V 3A TO-220SIS
товар відсутній
TK40E10K3,S1X(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
Description: MOSFET N-CH 100V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
товар відсутній
TK40P03M1(T6RDS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A DPAK
Description: MOSFET N-CH 30V 40A DPAK
товар відсутній
TK40S10K3Z(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A DPAK-3
Description: MOSFET N-CH 100V 40A DPAK-3
товар відсутній
TK45P03M1,RQ(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A DPAK-3
Description: MOSFET N-CH 30V 45A DPAK-3
товар відсутній
TK4A50D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 4A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Description: MOSFET N-CH 500V 4A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 111 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 57.73 грн |
50+ | 46.39 грн |
100+ | 33.67 грн |
TK4A53D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 4A TO220SIS
Description: MOSFET N-CH 525V 4A TO220SIS
товар відсутній
TK4A55DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 3.5A TO220SIS
Description: MOSFET N-CH 550V 3.5A TO220SIS
товар відсутній
TK4A55D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 4A TO220SIS
Description: MOSFET N-CH 550V 4A TO220SIS
товар відсутній
TK4A60DB(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A TO220SIS
Description: MOSFET N-CH 600V 3.7A TO220SIS
товар відсутній
TK4A65DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 3.5A TO220SIS
Description: MOSFET N-CH 650V 3.5A TO220SIS
товар відсутній
TK4P50D(T6RSS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 4A DPAK-3
Description: MOSFET N-CH 500V 4A DPAK-3
товар відсутній
TK4P55DA(T6RSS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 3.5A DPAK-3
Description: MOSFET N-CH 550V 3.5A DPAK-3
товар відсутній
TK4P55D(T6RSS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 4A DPAK-3
Description: MOSFET N-CH 550V 4A DPAK-3
товар відсутній
TK4P60DA(T6RSS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.5A DPAK-3
Description: MOSFET N-CH 600V 3.5A DPAK-3
товар відсутній
TK4P60DB(T6RSS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 3.7A DPAK
Description: MOSFET N-CH 600V 3.7A DPAK
товар відсутній
TK50E06K3A,S1X(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 50A TO-220AB
Description: MOSFET N-CH 60V 50A TO-220AB
товар відсутній
TK50E06K3(S1SS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 50A TO-220AB
Description: MOSFET N-CH 60V 50A TO-220AB
товар відсутній
TK50E08K3,S1X(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 50A TO220-3
Description: MOSFET N-CH 75V 50A TO220-3
товар відсутній
TK50E10K3(S1SS-Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 50A TO-220AB
Description: MOSFET N-CH 100V 50A TO-220AB
товар відсутній
TK50J60U(Q) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 50A TO-3PN
Description: MOSFET N-CH 600V 50A TO-3PN
товар відсутній
TK5A45DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 4.5A TO-220SIS
Description: MOSFET N-CH 450V 4.5A TO-220SIS
товар відсутній
TK5A53D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 5A TO220SIS
Description: MOSFET N-CH 525V 5A TO220SIS
товар відсутній
TK5A55D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 5A TO-220SIS
Description: MOSFET N-CH 550V 5A TO-220SIS
товар відсутній
TK5A60D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 600V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 98.35 грн |
50+ | 75.89 грн |
TK5A65DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 4.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 650V 4.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 100.49 грн |
10+ | 86.95 грн |
TK60E08K3,S1X(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 60A TO220-3
Description: MOSFET N-CH 75V 60A TO220-3
товар відсутній
TK60P03M1,RQ(S |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A DPAK
Description: MOSFET N-CH 30V 60A DPAK
товар відсутній
TK60S06K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A DPAK
Description: MOSFET N-CH 60V 60A DPAK
товар відсутній
TK65S04K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK-3
Description: MOSFET N-CH 40V 65A DPAK-3
товар відсутній
TK6A45DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 5.5A TO220SIS
Description: MOSFET N-CH 450V 5.5A TO220SIS
товар відсутній
TK6A50D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 6A TO220SIS
Description: MOSFET N-CH 500V 6A TO220SIS
товар відсутній
TK6A53D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 525V 6A TO220SIS
Description: MOSFET N-CH 525V 6A TO220SIS
товар відсутній
TK6A55DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 5.5A TO220SIS
Description: MOSFET N-CH 550V 5.5A TO220SIS
товар відсутній
TK7A45DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 6.5A TO-220SIS
Description: MOSFET N-CH 450V 6.5A TO-220SIS
товар відсутній
TK7A50D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 7A TO220SIS
Description: MOSFET N-CH 500V 7A TO220SIS
товар відсутній
TK7A55D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 7A TO-220SIS
Description: MOSFET N-CH 550V 7A TO-220SIS
товар відсутній
TK7A65D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 138.26 грн |
10+ | 110.7 грн |
TK80S04K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 10 V
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 10 V
товар відсутній
TK80S06K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 80A DPAK
Description: MOSFET N-CH 60V 80A DPAK
товар відсутній
TK8A45DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 7.5A TO-220SIS
Description: MOSFET N-CH 450V 7.5A TO-220SIS
товар відсутній
TK8A45D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 8A TO220SIS
Description: MOSFET N-CH 450V 8A TO220SIS
товар відсутній
TK8A50DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.04Ohm @ 3.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 500V 7.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.04Ohm @ 3.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.2 грн |
TK8A55DA(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 550V 7.5A TO220SIS
Description: MOSFET N-CH 550V 7.5A TO220SIS
товар відсутній