Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11066) > Сторінка 170 з 185

Обрати Сторінку:   [  << Попередня Сторінка ]  1 18 36 54 72 90 108 126 144 162 165 166 167 168 169 170 171 172 173 174 175 180 185  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
SI4534DY-T1-GE3 SI4534DY-T1-GE3 Vishay Siliconix si4534dy.pdf Description: MOSFET N/P-CH 60V 6.2A/8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 10040 шт:
термін постачання 21-31 дні (днів)
4+102.66 грн
10+80.62 грн
100+62.69 грн
500+49.87 грн
1000+40.62 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIP32433BDN-T1E4 SIP32433BDN-T1E4 Vishay Siliconix sip32433.pdf Description: 3.5 A, 78 M, 2.8 V TO 23 V PROGR
Features: Auto Restart, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 78mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SIP32433BDN-T1E4 SIP32433BDN-T1E4 Vishay Siliconix sip32433.pdf Description: 3.5 A, 78 M, 2.8 V TO 23 V PROGR
Features: Auto Restart, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 78mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
4+102.66 грн
10+71.81 грн
25+65.05 грн
100+54.10 грн
250+50.77 грн
500+48.77 грн
1000+46.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIP32460EVB SIP32460EVB Vishay Siliconix sip32461.pdf Description: EVAL BOARD FOR SIP32460
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: SIP32460
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+1112.54 грн
В кошику  од. на суму  грн.
SIP32448DNP-T1-GE4 SIP32448DNP-T1-GE4 Vishay Siliconix SiP32448_SiP32449_RevC_8-24-15.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 38mOhm
Input Type: Non-Inverting
Voltage - Load: 1.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+17.26 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIP32448DNP-T1-GE4 SIP32448DNP-T1-GE4 Vishay Siliconix SiP32448_SiP32449_RevC_8-24-15.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 38mOhm
Input Type: Non-Inverting
Voltage - Load: 1.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Active
на замовлення 5347 шт:
термін постачання 21-31 дні (днів)
5+76.40 грн
10+45.60 грн
25+38.29 грн
100+28.10 грн
250+24.26 грн
500+21.91 грн
1000+19.62 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIP32433ADN-T1E4 SIP32433ADN-T1E4 Vishay Siliconix sip32433.pdf Description: 3.5 A, 78 M, 2.8 V TO 23 V PROGR
Features: Latch Function, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 78mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SIP32433ADN-T1E4 SIP32433ADN-T1E4 Vishay Siliconix sip32433.pdf Description: 3.5 A, 78 M, 2.8 V TO 23 V PROGR
Features: Latch Function, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 78mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
4+102.66 грн
10+71.81 грн
25+65.05 грн
100+54.10 грн
250+50.77 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SiP32462EVB SiP32462EVB Vishay Siliconix sip32461.pdf Description: EVAL BOARD FOR SIP32462
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: SIP32462
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+1112.54 грн
В кошику  од. на суму  грн.
SiP32409EVB Vishay Siliconix sip32408.pdf Description: EVAL BOARD FOR SIP32409
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: SIP32409
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SI3129DV-T1-GE3 SI3129DV-T1-GE3 Vishay Siliconix si3129dv.pdf Description: P-CHANNEL 80 V (D-S) MOSFET TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
SI3129DV-T1-GE3 SI3129DV-T1-GE3 Vishay Siliconix si3129dv.pdf Description: P-CHANNEL 80 V (D-S) MOSFET TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V
на замовлення 2902 шт:
термін постачання 21-31 дні (днів)
7+48.54 грн
10+40.54 грн
100+28.02 грн
500+21.98 грн
1000+18.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQS482EN-T1_GE3 SQS482EN-T1_GE3 Vishay Siliconix sqs482en.pdf Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3822 шт:
термін постачання 21-31 дні (днів)
4+87.54 грн
10+56.94 грн
100+39.66 грн
500+32.24 грн
1000+28.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI2369DS-T1-BE3 SI2369DS-T1-BE3 Vishay Siliconix si2369d.pdf Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.87 грн
6000+9.72 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI2369DS-T1-BE3 SI2369DS-T1-BE3 Vishay Siliconix si2369d.pdf Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
на замовлення 8503 шт:
термін постачання 21-31 дні (днів)
9+37.40 грн
13+25.37 грн
100+18.61 грн
500+13.24 грн
1000+11.01 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SQ3426CEV-T1_GE3 SQ3426CEV-T1_GE3 Vishay Siliconix sq3426cev.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQ3426CEV-T1_GE3 SQ3426CEV-T1_GE3 Vishay Siliconix sq3426cev.pdf Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1276 шт:
термін постачання 21-31 дні (днів)
6+54.91 грн
10+34.64 грн
100+23.11 грн
500+16.58 грн
1000+14.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SIHP35N60E-BE3 SIHP35N60E-BE3 Vishay Siliconix sihp35n60e.pdf Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
1+511.71 грн
10+332.21 грн
100+241.07 грн
В кошику  од. на суму  грн.
SI1317DL-T1-BE3 SI1317DL-T1-BE3 Vishay Siliconix si1317dl.pdf Description: MOSFET P-CH 20V 1.4A/1.4A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+9.33 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1317DL-T1-BE3 SI1317DL-T1-BE3 Vishay Siliconix si1317dl.pdf Description: MOSFET P-CH 20V 1.4A/1.4A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
на замовлення 5692 шт:
термін постачання 21-31 дні (днів)
10+33.42 грн
14+22.15 грн
100+14.99 грн
500+11.44 грн
1000+9.68 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SIR108DP-T1-RE3 SIR108DP-T1-RE3 Vishay Siliconix sir108dp.pdf Description: MOSFET N-CH 100V 12.4A/45A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+57.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIHG24N65E-GE3 SIHG24N65E-GE3 Vishay Siliconix sihg24n6.pdf Description: MOSFET N-CH 650V 24A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
1+438.49 грн
10+322.86 грн
100+219.91 грн
500+184.63 грн
В кошику  од. на суму  грн.
SIHB24N65E-GE3 SIHB24N65E-GE3 Vishay Siliconix sihb24n65e.pdf Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
на замовлення 1866 шт:
термін постачання 21-31 дні (днів)
1+426.55 грн
50+223.14 грн
100+219.19 грн
500+179.51 грн
1000+176.62 грн
В кошику  од. на суму  грн.
SiHG64N65E-GE3 Vishay Siliconix sihg64n65e.pdf Description: MOSFET N-CH 650V 64A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 369 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7497 pF @ 100 V
на замовлення 481 шт:
термін постачання 21-31 дні (днів)
1+1038.53 грн
10+727.64 грн
100+576.35 грн
В кошику  од. на суму  грн.
IRF840LCPBF-BE3 IRF840LCPBF-BE3 Vishay Siliconix 91067.pdf Description: MOSFET N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
2+194.18 грн
10+121.62 грн
100+100.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF730BPBF IRF730BPBF Vishay Siliconix irf730b.pdf Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG20N50E-GE3 SIHG20N50E-GE3 Vishay Siliconix sihg20n50e.pdf Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
на замовлення 468 шт:
термін постачання 21-31 дні (днів)
2+260.23 грн
10+165.83 грн
100+116.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHA20N50E-E3 SIHA20N50E-E3 Vishay Siliconix siha20n50e.pdf Description: MOSFET N-CH 500V 19A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
DG407BDW-T1-E3 DG407BDW-T1-E3 Vishay Siliconix dg406b.pdf Description: IC MUX DUAL 8:1 60OHM 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 11pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel Capacitance (CS(off), CD(off)): 6pF, 54pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
товару немає в наявності
В кошику  од. на суму  грн.
DG407BDW-T1-E3 DG407BDW-T1-E3 Vishay Siliconix dg406b.pdf Description: IC MUX DUAL 8:1 60OHM 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 11pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel Capacitance (CS(off), CD(off)): 6pF, 54pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
на замовлення 1494 шт:
термін постачання 21-31 дні (днів)
1+710.66 грн
10+533.29 грн
25+495.51 грн
100+426.09 грн
250+407.53 грн
500+396.34 грн
В кошику  од. на суму  грн.
IRFZ34SPBF IRFZ34SPBF Vishay Siliconix sihfz34s.pdf Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 257 шт:
термін постачання 21-31 дні (днів)
2+168.71 грн
10+104.37 грн
100+71.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
Si4214DDY-T1-E3 Si4214DDY-T1-E3 Vishay Siliconix si4214ddy-t1-e3.pdf Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
Si4214DDY-T1-E3 Si4214DDY-T1-E3 Vishay Siliconix si4214ddy-t1-e3.pdf Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 1122 шт:
термін постачання 21-31 дні (днів)
4+102.66 грн
10+62.23 грн
100+41.17 грн
500+30.15 грн
1000+27.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4214DY-T1-GE3 SI4214DY-T1-GE3 Vishay Siliconix si4214dy.pdf Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SI4214DY-T1-GE3 SI4214DY-T1-GE3 Vishay Siliconix si4214dy.pdf Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SIHF18N50D-E3 SIHF18N50D-E3 Vishay Siliconix sihf18n50d.pdf Description: MOSFET N-CH 500V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
2+264.21 грн
10+166.37 грн
100+116.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJ844AEP-T1_GE3 SQJ844AEP-T1_GE3 Vishay Siliconix sqj844aep.pdf Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SQJ844AEP-T1_GE3 SQJ844AEP-T1_GE3 Vishay Siliconix sqj844aep.pdf Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SQJA02EP-T1_GE3 SQJA02EP-T1_GE3 Vishay Siliconix sqja02ep.pdf Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJA02EP-T1_GE3 SQJA02EP-T1_GE3 Vishay Siliconix sqja02ep.pdf Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2926 шт:
термін постачання 21-31 дні (днів)
4+102.66 грн
10+81.23 грн
100+63.19 грн
500+50.26 грн
1000+40.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ416EP-T1_GE3 SQJ416EP-T1_GE3 Vishay Siliconix sqj416ep.pdf Description: MOSFET N-CH 100V 27A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQJ416EP-T1_GE3 SQJ416EP-T1_GE3 Vishay Siliconix sqj416ep.pdf Description: MOSFET N-CH 100V 27A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
5+74.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIHG22N60EF-GE3 SIHG22N60EF-GE3 Vishay Siliconix tf-sihg22n60ef-ge3.pdf Description: MOSFET N-CH 600V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
1+378.81 грн
25+209.98 грн
100+173.03 грн
500+134.63 грн
В кошику  од. на суму  грн.
SIHG47N65E-GE3 SIHG47N65E-GE3 Vishay Siliconix tf-sihg47n65e-ge3.pdf Description: MOSFET N-CH 650V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V
на замовлення 484 шт:
термін постачання 21-31 дні (днів)
1+561.05 грн
10+438.57 грн
100+324.34 грн
В кошику  од. на суму  грн.
SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 Vishay Siliconix sqjq402e.pdf Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
2000+89.97 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 Vishay Siliconix sqjq402e.pdf Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13974 шт:
термін постачання 21-31 дні (днів)
2+223.62 грн
10+168.82 грн
100+117.81 грн
500+90.10 грн
1000+83.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHH186N60EF-T1GE3 SIHH186N60EF-T1GE3 Vishay Siliconix sihh186n60ef.pdf Description: MOSFET N-CH 600V 16A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHH186N60EF-T1GE3 SIHH186N60EF-T1GE3 Vishay Siliconix sihh186n60ef.pdf Description: MOSFET N-CH 600V 16A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
на замовлення 4567 шт:
термін постачання 21-31 дні (днів)
1+351.75 грн
10+252.20 грн
100+187.61 грн
500+148.30 грн
1000+142.74 грн
В кошику  од. на суму  грн.
SQJQ144AER-T1_GE3 SQJQ144AER-T1_GE3 Vishay Siliconix sqjq144aer.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQJQ144AER-T1_GE3 SQJQ144AER-T1_GE3 Vishay Siliconix sqjq144aer.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+222.83 грн
10+193.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJQ150E-T1_GE3 SQJQ150E-T1_GE3 Vishay Siliconix sqjq150e.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 233A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJQ150E-T1_GE3 SQJQ150E-T1_GE3 Vishay Siliconix sqjq150e.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 233A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
2+225.21 грн
10+140.47 грн
100+97.00 грн
500+73.58 грн
1000+67.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJQ140E-T1_GE3 SQJQ140E-T1_GE3 Vishay Siliconix sqjq140e.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 701A (Tc)
Rds On (Max) @ Id, Vgs: 0.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+116.48 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJQ140E-T1_GE3 SQJQ140E-T1_GE3 Vishay Siliconix sqjq140e.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 701A (Tc)
Rds On (Max) @ Id, Vgs: 0.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5866 шт:
термін постачання 21-31 дні (днів)
2+303.20 грн
10+210.90 грн
100+149.49 грн
500+115.46 грн
1000+107.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIZF300DT-T1-GE3 SIZF300DT-T1-GE3 Vishay Siliconix sizf300dt.pdf Description: MOSFET 2N-CH 30V 23A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
2N5114 Vishay Siliconix 124387-lds-0006 Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SQJ202EP-T1_GE3 SQJ202EP-T1_GE3 Vishay Siliconix sqj202ep.pdf Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJ202EP-T1_GE3 SQJ202EP-T1_GE3 Vishay Siliconix sqj202ep.pdf Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
4+102.66 грн
10+80.92 грн
100+62.97 грн
500+50.09 грн
1000+40.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHFL9110TR-GE3 SIHFL9110TR-GE3 Vishay Siliconix sihfl911.pdf Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+15.18 грн
5000+14.11 грн
7500+13.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIHFL9110TR-GE3 SIHFL9110TR-GE3 Vishay Siliconix sihfl911.pdf Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 10345 шт:
термін постачання 21-31 дні (днів)
6+55.71 грн
10+37.63 грн
100+26.20 грн
500+19.94 грн
1000+17.14 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SI4534DY-T1-GE3 si4534dy.pdf
SI4534DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 60V 6.2A/8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 10040 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.66 грн
10+80.62 грн
100+62.69 грн
500+49.87 грн
1000+40.62 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIP32433BDN-T1E4 sip32433.pdf
SIP32433BDN-T1E4
Виробник: Vishay Siliconix
Description: 3.5 A, 78 M, 2.8 V TO 23 V PROGR
Features: Auto Restart, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 78mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SIP32433BDN-T1E4 sip32433.pdf
SIP32433BDN-T1E4
Виробник: Vishay Siliconix
Description: 3.5 A, 78 M, 2.8 V TO 23 V PROGR
Features: Auto Restart, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 78mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.66 грн
10+71.81 грн
25+65.05 грн
100+54.10 грн
250+50.77 грн
500+48.77 грн
1000+46.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIP32460EVB sip32461.pdf
SIP32460EVB
Виробник: Vishay Siliconix
Description: EVAL BOARD FOR SIP32460
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: SIP32460
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1112.54 грн
В кошику  од. на суму  грн.
SIP32448DNP-T1-GE4 SiP32448_SiP32449_RevC_8-24-15.pdf
SIP32448DNP-T1-GE4
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 38mOhm
Input Type: Non-Inverting
Voltage - Load: 1.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.26 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIP32448DNP-T1-GE4 SiP32448_SiP32449_RevC_8-24-15.pdf
SIP32448DNP-T1-GE4
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 38mOhm
Input Type: Non-Inverting
Voltage - Load: 1.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Active
на замовлення 5347 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.40 грн
10+45.60 грн
25+38.29 грн
100+28.10 грн
250+24.26 грн
500+21.91 грн
1000+19.62 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIP32433ADN-T1E4 sip32433.pdf
SIP32433ADN-T1E4
Виробник: Vishay Siliconix
Description: 3.5 A, 78 M, 2.8 V TO 23 V PROGR
Features: Latch Function, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 78mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SIP32433ADN-T1E4 sip32433.pdf
SIP32433ADN-T1E4
Виробник: Vishay Siliconix
Description: 3.5 A, 78 M, 2.8 V TO 23 V PROGR
Features: Latch Function, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 78mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.66 грн
10+71.81 грн
25+65.05 грн
100+54.10 грн
250+50.77 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SiP32462EVB sip32461.pdf
SiP32462EVB
Виробник: Vishay Siliconix
Description: EVAL BOARD FOR SIP32462
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: SIP32462
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1112.54 грн
В кошику  од. на суму  грн.
SiP32409EVB sip32408.pdf
Виробник: Vishay Siliconix
Description: EVAL BOARD FOR SIP32409
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: SIP32409
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SI3129DV-T1-GE3 si3129dv.pdf
SI3129DV-T1-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
SI3129DV-T1-GE3 si3129dv.pdf
SI3129DV-T1-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V
на замовлення 2902 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.54 грн
10+40.54 грн
100+28.02 грн
500+21.98 грн
1000+18.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQS482EN-T1_GE3 sqs482en.pdf
SQS482EN-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3822 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.54 грн
10+56.94 грн
100+39.66 грн
500+32.24 грн
1000+28.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI2369DS-T1-BE3 si2369d.pdf
SI2369DS-T1-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.87 грн
6000+9.72 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI2369DS-T1-BE3 si2369d.pdf
SI2369DS-T1-BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
на замовлення 8503 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.40 грн
13+25.37 грн
100+18.61 грн
500+13.24 грн
1000+11.01 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SQ3426CEV-T1_GE3 sq3426cev.pdf
SQ3426CEV-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQ3426CEV-T1_GE3 sq3426cev.pdf
SQ3426CEV-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1276 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.91 грн
10+34.64 грн
100+23.11 грн
500+16.58 грн
1000+14.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SIHP35N60E-BE3 sihp35n60e.pdf
SIHP35N60E-BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+511.71 грн
10+332.21 грн
100+241.07 грн
В кошику  од. на суму  грн.
SI1317DL-T1-BE3 si1317dl.pdf
SI1317DL-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A/1.4A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.33 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI1317DL-T1-BE3 si1317dl.pdf
SI1317DL-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A/1.4A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 272 pF @ 10 V
на замовлення 5692 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.42 грн
14+22.15 грн
100+14.99 грн
500+11.44 грн
1000+9.68 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SIR108DP-T1-RE3 sir108dp.pdf
SIR108DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 12.4A/45A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+57.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIHG24N65E-GE3 sihg24n6.pdf
SIHG24N65E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
на замовлення 530 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+438.49 грн
10+322.86 грн
100+219.91 грн
500+184.63 грн
В кошику  од. на суму  грн.
SIHB24N65E-GE3 sihb24n65e.pdf
SIHB24N65E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
на замовлення 1866 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+426.55 грн
50+223.14 грн
100+219.19 грн
500+179.51 грн
1000+176.62 грн
В кошику  од. на суму  грн.
SiHG64N65E-GE3 sihg64n65e.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 64A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 369 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7497 pF @ 100 V
на замовлення 481 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1038.53 грн
10+727.64 грн
100+576.35 грн
В кошику  од. на суму  грн.
IRF840LCPBF-BE3 91067.pdf
IRF840LCPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+194.18 грн
10+121.62 грн
100+100.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF730BPBF irf730b.pdf
IRF730BPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG20N50E-GE3 sihg20n50e.pdf
SIHG20N50E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
на замовлення 468 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+260.23 грн
10+165.83 грн
100+116.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHA20N50E-E3 siha20n50e.pdf
SIHA20N50E-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
DG407BDW-T1-E3 dg406b.pdf
DG407BDW-T1-E3
Виробник: Vishay Siliconix
Description: IC MUX DUAL 8:1 60OHM 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 11pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel Capacitance (CS(off), CD(off)): 6pF, 54pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
товару немає в наявності
В кошику  од. на суму  грн.
DG407BDW-T1-E3 dg406b.pdf
DG407BDW-T1-E3
Виробник: Vishay Siliconix
Description: IC MUX DUAL 8:1 60OHM 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 11pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel Capacitance (CS(off), CD(off)): 6pF, 54pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
на замовлення 1494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+710.66 грн
10+533.29 грн
25+495.51 грн
100+426.09 грн
250+407.53 грн
500+396.34 грн
В кошику  од. на суму  грн.
IRFZ34SPBF sihfz34s.pdf
IRFZ34SPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 257 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.71 грн
10+104.37 грн
100+71.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
Si4214DDY-T1-E3 si4214ddy-t1-e3.pdf
Si4214DDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
Si4214DDY-T1-E3 si4214ddy-t1-e3.pdf
Si4214DDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 1122 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.66 грн
10+62.23 грн
100+41.17 грн
500+30.15 грн
1000+27.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4214DY-T1-GE3 si4214dy.pdf
SI4214DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SI4214DY-T1-GE3 si4214dy.pdf
SI4214DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SIHF18N50D-E3 sihf18n50d.pdf
SIHF18N50D-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+264.21 грн
10+166.37 грн
100+116.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJ844AEP-T1_GE3 sqj844aep.pdf
SQJ844AEP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SQJ844AEP-T1_GE3 sqj844aep.pdf
SQJ844AEP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1161pF @ 15V
Rds On (Max) @ Id, Vgs: 16.6mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SQJA02EP-T1_GE3 sqja02ep.pdf
SQJA02EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJA02EP-T1_GE3 sqja02ep.pdf
SQJA02EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2926 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.66 грн
10+81.23 грн
100+63.19 грн
500+50.26 грн
1000+40.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ416EP-T1_GE3 sqj416ep.pdf
SQJ416EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 27A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQJ416EP-T1_GE3 sqj416ep.pdf
SQJ416EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 27A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIHG22N60EF-GE3 tf-sihg22n60ef-ge3.pdf
SIHG22N60EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+378.81 грн
25+209.98 грн
100+173.03 грн
500+134.63 грн
В кошику  од. на суму  грн.
SIHG47N65E-GE3 tf-sihg47n65e-ge3.pdf
SIHG47N65E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5682 pF @ 100 V
на замовлення 484 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+561.05 грн
10+438.57 грн
100+324.34 грн
В кошику  од. на суму  грн.
SQJQ402E-T1_GE3 sqjq402e.pdf
SQJQ402E-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+89.97 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJQ402E-T1_GE3 sqjq402e.pdf
SQJQ402E-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+223.62 грн
10+168.82 грн
100+117.81 грн
500+90.10 грн
1000+83.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHH186N60EF-T1GE3 sihh186n60ef.pdf
SIHH186N60EF-T1GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 16A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHH186N60EF-T1GE3 sihh186n60ef.pdf
SIHH186N60EF-T1GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 16A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
на замовлення 4567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+351.75 грн
10+252.20 грн
100+187.61 грн
500+148.30 грн
1000+142.74 грн
В кошику  од. на суму  грн.
SQJQ144AER-T1_GE3 sqjq144aer.pdf
SQJQ144AER-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQJQ144AER-T1_GE3 sqjq144aer.pdf
SQJQ144AER-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.83 грн
10+193.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJQ150E-T1_GE3 sqjq150e.pdf
SQJQ150E-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 233A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJQ150E-T1_GE3 sqjq150e.pdf
SQJQ150E-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 233A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.21 грн
10+140.47 грн
100+97.00 грн
500+73.58 грн
1000+67.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJQ140E-T1_GE3 sqjq140e.pdf
SQJQ140E-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 701A (Tc)
Rds On (Max) @ Id, Vgs: 0.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+116.48 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJQ140E-T1_GE3 sqjq140e.pdf
SQJQ140E-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 701A (Tc)
Rds On (Max) @ Id, Vgs: 0.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5866 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+303.20 грн
10+210.90 грн
100+149.49 грн
500+115.46 грн
1000+107.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIZF300DT-T1-GE3 sizf300dt.pdf
SIZF300DT-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
2N5114 124387-lds-0006
Виробник: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SQJ202EP-T1_GE3 sqj202ep.pdf
SQJ202EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJ202EP-T1_GE3 sqj202ep.pdf
SQJ202EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.66 грн
10+80.92 грн
100+62.97 грн
500+50.09 грн
1000+40.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHFL9110TR-GE3 sihfl911.pdf
SIHFL9110TR-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+15.18 грн
5000+14.11 грн
7500+13.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIHFL9110TR-GE3 sihfl911.pdf
SIHFL9110TR-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 10345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.71 грн
10+37.63 грн
100+26.20 грн
500+19.94 грн
1000+17.14 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 18 36 54 72 90 108 126 144 162 165 166 167 168 169 170 171 172 173 174 175 180 185  [ Наступна Сторінка >> ]