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SQJ740EP-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 93W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
3+152.80 грн
10+132.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJ202EP-T2_GE3 SQJ202EP-T2_GE3 Vishay Siliconix sqj202ep.pdf Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+39.13 грн
6000+35.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ202EP-T2_GE3 SQJ202EP-T2_GE3 Vishay Siliconix sqj202ep.pdf Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3+142.45 грн
10+87.52 грн
100+58.89 грн
500+43.76 грн
1000+40.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI6926ADQ-T1-BE3 SI6926ADQ-T1-BE3 Vishay Siliconix 72754.pdf Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+36.47 грн
6000+33.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI6926ADQ-T1-BE3 SI6926ADQ-T1-BE3 Vishay Siliconix 72754.pdf Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 8985 шт:
термін постачання 21-31 дні (днів)
4+88.33 грн
10+69.51 грн
100+54.03 грн
500+42.98 грн
1000+35.01 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI6954ADQ-T1-BE3 SI6954ADQ-T1-BE3 Vishay Siliconix 71130.pdf Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+34.44 грн
6000+31.58 грн
9000+30.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI6954ADQ-T1-BE3 SI6954ADQ-T1-BE3 Vishay Siliconix 71130.pdf Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
4+82.76 грн
10+65.60 грн
100+51.01 грн
500+40.58 грн
1000+33.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHF9520S-GE3 SIHF9520S-GE3 Vishay Siliconix sihf9520.pdf Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
4+93.91 грн
10+61.00 грн
100+42.59 грн
500+32.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4848BDY-T1-GE3 SI4848BDY-T1-GE3 Vishay Siliconix si4848bdy.pdf Description: N-CHANNEL 150-V (D-S) MOSFET SO-
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+20.37 грн
5000+17.52 грн
7500+17.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4848BDY-T1-GE3 SI4848BDY-T1-GE3 Vishay Siliconix si4848bdy.pdf Description: N-CHANNEL 150-V (D-S) MOSFET SO-
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
на замовлення 9803 шт:
термін постачання 21-31 дні (днів)
6+57.30 грн
10+41.23 грн
100+31.29 грн
500+22.95 грн
1000+20.79 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SIA907EDJ-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SIA907EDJ-T4-GE3 Vishay Siliconix Description: MOSFET N-CH 30V SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SIRS700DP-T1-GE3 SIRS700DP-T1-GE3 Vishay Siliconix sirs700dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta),132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRS700DP-T1-GE3 SIRS700DP-T1-GE3 Vishay Siliconix sirs700dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta),132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 50 V
на замовлення 3150 шт:
термін постачання 21-31 дні (днів)
1+333.44 грн
10+211.66 грн
100+149.67 грн
500+115.61 грн
1000+107.63 грн
В кошику  од. на суму  грн.
SQA700CEJW-T1_GE3 SQA700CEJW-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+15.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQA700CEJW-T1_GE3 SQA700CEJW-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 11968 шт:
термін постачання 21-31 дні (днів)
8+44.57 грн
10+36.55 грн
100+27.30 грн
500+20.14 грн
1000+15.56 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SI4864DY-T1-GE3 SI4864DY-T1-GE3 Vishay Siliconix si4864dy.pdf Description: MOSFET N-CH 20V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
товару немає в наявності
В кошику  од. на суму  грн.
SI4864DY-T1-GE3 SI4864DY-T1-GE3 Vishay Siliconix si4864dy.pdf Description: MOSFET N-CH 20V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
на замовлення 2203 шт:
термін постачання 21-31 дні (днів)
1+369.26 грн
10+236.72 грн
100+168.94 грн
500+131.33 грн
1000+122.73 грн
В кошику  од. на суму  грн.
SIRA88BDP-T1-GE3 SIRA88BDP-T1-GE3 Vishay Siliconix sira88bdp.pdf Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+15.22 грн
6000+13.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIRA88BDP-T1-GE3 SIRA88BDP-T1-GE3 Vishay Siliconix sira88bdp.pdf Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+42.97 грн
10+35.48 грн
100+26.47 грн
500+19.52 грн
1000+15.08 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SQJ942EP-T1_GE3 Vishay Siliconix sqj942ep.pdf Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W, 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+40.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ942EP-T1_GE3 Vishay Siliconix sqj942ep.pdf Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W, 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
4+96.29 грн
10+82.69 грн
100+64.49 грн
500+50.00 грн
1000+39.47 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ144EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 130A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
3000+32.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ144EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 130A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
5+77.99 грн
10+66.90 грн
100+52.16 грн
500+40.44 грн
1000+31.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIR588DP-T1-RE3 SIR588DP-T1-RE3 Vishay Siliconix Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.5A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
SIR588DP-T1-RE3 SIR588DP-T1-RE3 Vishay Siliconix Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.5A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
4+79.58 грн
10+68.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ459EP-T1_BE3 SQJ459EP-T1_BE3 Vishay Siliconix sqj459ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
товару немає в наявності
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SQJ459EP-T1_BE3 SQJ459EP-T1_BE3 Vishay Siliconix sqj459ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)
4+93.11 грн
10+73.11 грн
100+56.87 грн
500+45.24 грн
1000+36.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJA76EP-T1_BE3 SQJA76EP-T1_BE3 Vishay Siliconix sqja76ep.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJA76EP-T1_BE3 SQJA76EP-T1_BE3 Vishay Siliconix sqja76ep.pdf Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
3+141.65 грн
10+86.83 грн
100+58.45 грн
500+43.43 грн
1000+39.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJA68EP-T1_BE3 SQJA68EP-T1_BE3 Vishay Siliconix sqja68ep.pdf Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
товару немає в наявності
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SQJA68EP-T1_BE3 SQJA68EP-T1_BE3 Vishay Siliconix sqja68ep.pdf Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 2320 шт:
термін постачання 21-31 дні (днів)
6+59.69 грн
10+50.81 грн
100+38.97 грн
500+28.91 грн
1000+23.13 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SIR882BDP-T1-RE3 SIR882BDP-T1-RE3 Vishay Siliconix sir882bdp.pdf Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+45.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS460ENW-T1_GE3 SQS460ENW-T1_GE3 Vishay Siliconix sqs460enw.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+27.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS460ENW-T1_GE3 SQS460ENW-T1_GE3 Vishay Siliconix sqs460enw.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5041 шт:
термін постачання 21-31 дні (днів)
4+82.76 грн
10+53.87 грн
100+40.85 грн
500+31.59 грн
1000+27.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHG28N65EF-GE3 SIHG28N65EF-GE3 Vishay Siliconix sihg28n65ef.pdf Description: MOSFET N-CH 650V 28A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3249 pF @ 100 V
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SIHP054N65E-GE3 SIHP054N65E-GE3 Vishay Siliconix sihp054n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
товару немає в наявності
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SIHP054N65E-GE3 SIHP054N65E-GE3 Vishay Siliconix sihp054n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
на замовлення 1037 шт:
термін постачання 21-31 дні (днів)
1+528.42 грн
10+435.36 грн
100+386.27 грн
500+329.21 грн
В кошику  од. на суму  грн.
SIHP074N65E-GE3 SIHP074N65E-GE3 Vishay Siliconix sihp074n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+278.35 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SIHP074N65E-GE3 SIHP074N65E-GE3 Vishay Siliconix sihp074n65e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+603.22 грн
10+411.45 грн
100+328.09 грн
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SUM70042M-GE3 SUM70042M-GE3 Vishay Siliconix sum70042m.pdf Description: N-CHANNEL 100 V (D-S) MOSFET D2P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
SUM70042M-GE3 SUM70042M-GE3 Vishay Siliconix sum70042m.pdf Description: N-CHANNEL 100 V (D-S) MOSFET D2P
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
1+483.85 грн
10+313.66 грн
100+227.21 грн
В кошику  од. на суму  грн.
SIZ328DT-T1-GE3 SIZ328DT-T1-GE3 Vishay Siliconix siz328dt.pdf Description: MOSFET 2N-CH 25V 11.1A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SIZ328DT-T1-GE3 SIZ328DT-T1-GE3 Vishay Siliconix siz328dt.pdf Description: MOSFET 2N-CH 25V 11.1A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
5+74.81 грн
10+48.20 грн
100+33.39 грн
500+25.07 грн
1000+23.01 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFP440 IRFP440 Vishay Siliconix FAIRS32508-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 8.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFP448 IRFP448 Vishay Siliconix 91229.pdf Description: MOSFET N-CH 500V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRFP448PBF IRFP448PBF Vishay Siliconix 91229.pdf Description: MOSFET N-CH 500V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товару немає в наявності
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SQJ154EP-T1_GE3 SQJ154EP-T1_GE3 Vishay Siliconix sqj154ep.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Qualification: AEC-Q101
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SQJ154EP-T1_GE3 SQJ154EP-T1_GE3 Vishay Siliconix sqj154ep.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1234 шт:
термін постачання 21-31 дні (днів)
4+83.56 грн
10+65.83 грн
100+51.20 грн
500+40.72 грн
1000+33.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQS142ELNW-T1_GE3 SQS142ELNW-T1_GE3 Vishay Siliconix sqs142elnw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQS142ELNW-T1_GE3 SQS142ELNW-T1_GE3 Vishay Siliconix sqs142elnw.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1872 шт:
термін постачання 21-31 дні (днів)
4+89.93 грн
10+50.19 грн
100+39.93 грн
500+29.26 грн
1000+26.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHFU9220-GE3 SIHFU9220-GE3 Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
3+110.62 грн
10+67.28 грн
100+44.69 грн
500+32.84 грн
1000+29.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF644 IRF644 Vishay Siliconix 91039.pdf description Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFP450PBF IRFP450PBF Vishay Siliconix 91233.pdf Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 3373 шт:
термін постачання 21-31 дні (днів)
2+272.96 грн
25+171.11 грн
100+160.82 грн
500+139.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFB18N50K IRFB18N50K Vishay Siliconix irfb18n50k.pdf Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SQD40081EL_GE3 SQD40081EL_GE3 Vishay Siliconix sqd40081el.pdf Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+39.85 грн
4000+36.13 грн
6000+34.89 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQD40081EL_GE3 SQD40081EL_GE3 Vishay Siliconix sqd40081el.pdf Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7649 шт:
термін постачання 21-31 дні (днів)
3+124.15 грн
10+86.06 грн
100+58.03 грн
500+43.16 грн
1000+39.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHP10N40D-E3 SIHP10N40D-E3 Vishay Siliconix sihp10n40d.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
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IRFP9240 IRFP9240 Vishay Siliconix description Description: MOSFET P-CH 200V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SIC403BCD-T1-GE3 SIC403BCD-T1-GE3 Vishay Siliconix sic403abcd.pdf Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+65.37 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ740EP-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 93W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.80 грн
10+132.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJ202EP-T2_GE3 sqj202ep.pdf
SQJ202EP-T2_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+39.13 грн
6000+35.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ202EP-T2_GE3 sqj202ep.pdf
SQJ202EP-T2_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.45 грн
10+87.52 грн
100+58.89 грн
500+43.76 грн
1000+40.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI6926ADQ-T1-BE3 72754.pdf
SI6926ADQ-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+36.47 грн
6000+33.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI6926ADQ-T1-BE3 72754.pdf
SI6926ADQ-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 8985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.33 грн
10+69.51 грн
100+54.03 грн
500+42.98 грн
1000+35.01 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI6954ADQ-T1-BE3 71130.pdf
SI6954ADQ-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+34.44 грн
6000+31.58 грн
9000+30.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI6954ADQ-T1-BE3 71130.pdf
SI6954ADQ-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.76 грн
10+65.60 грн
100+51.01 грн
500+40.58 грн
1000+33.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHF9520S-GE3 sihf9520.pdf
SIHF9520S-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.91 грн
10+61.00 грн
100+42.59 грн
500+32.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SI4848BDY-T1-GE3 si4848bdy.pdf
SI4848BDY-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET SO-
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+20.37 грн
5000+17.52 грн
7500+17.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4848BDY-T1-GE3 si4848bdy.pdf
SI4848BDY-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET SO-
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 3.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 75 V
на замовлення 9803 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.30 грн
10+41.23 грн
100+31.29 грн
500+22.95 грн
1000+20.79 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SIA907EDJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SIA907EDJ-T4-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
SIRS700DP-T1-GE3 sirs700dp.pdf
SIRS700DP-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta),132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRS700DP-T1-GE3 sirs700dp.pdf
SIRS700DP-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta),132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 50 V
на замовлення 3150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+333.44 грн
10+211.66 грн
100+149.67 грн
500+115.61 грн
1000+107.63 грн
В кошику  од. на суму  грн.
SQA700CEJW-T1_GE3
SQA700CEJW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQA700CEJW-T1_GE3
SQA700CEJW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
на замовлення 11968 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.57 грн
10+36.55 грн
100+27.30 грн
500+20.14 грн
1000+15.56 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SI4864DY-T1-GE3 si4864dy.pdf
SI4864DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
товару немає в наявності
В кошику  од. на суму  грн.
SI4864DY-T1-GE3 si4864dy.pdf
SI4864DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
на замовлення 2203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+369.26 грн
10+236.72 грн
100+168.94 грн
500+131.33 грн
1000+122.73 грн
В кошику  од. на суму  грн.
SIRA88BDP-T1-GE3 sira88bdp.pdf
SIRA88BDP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.22 грн
6000+13.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIRA88BDP-T1-GE3 sira88bdp.pdf
SIRA88BDP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/40A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.97 грн
10+35.48 грн
100+26.47 грн
500+19.52 грн
1000+15.08 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SQJ942EP-T1_GE3 sqj942ep.pdf
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W, 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+40.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ942EP-T1_GE3 sqj942ep.pdf
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W, 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 809pF @ 20V, 1451pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.8A, 10V, 11mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V, 33.8nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.29 грн
10+82.69 грн
100+64.49 грн
500+50.00 грн
1000+39.47 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ144EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 130A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+32.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ144EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 130A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.99 грн
10+66.90 грн
100+52.16 грн
500+40.44 грн
1000+31.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIR588DP-T1-RE3
SIR588DP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.5A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
SIR588DP-T1-RE3
SIR588DP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 59.5A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 40 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.58 грн
10+68.82 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ459EP-T1_BE3 sqj459ep.pdf
SQJ459EP-T1_BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
SQJ459EP-T1_BE3 sqj459ep.pdf
SQJ459EP-T1_BE3
Виробник: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.11 грн
10+73.11 грн
100+56.87 грн
500+45.24 грн
1000+36.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJA76EP-T1_BE3 sqja76ep.pdf
SQJA76EP-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJA76EP-T1_BE3 sqja76ep.pdf
SQJA76EP-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.65 грн
10+86.83 грн
100+58.45 грн
500+43.43 грн
1000+39.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJA68EP-T1_BE3 sqja68ep.pdf
SQJA68EP-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
товару немає в наявності
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SQJA68EP-T1_BE3 sqja68ep.pdf
SQJA68EP-T1_BE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 2320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.69 грн
10+50.81 грн
100+38.97 грн
500+28.91 грн
1000+23.13 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SIR882BDP-T1-RE3 sir882bdp.pdf
SIR882BDP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+45.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS460ENW-T1_GE3 sqs460enw.pdf
SQS460ENW-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+27.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQS460ENW-T1_GE3 sqs460enw.pdf
SQS460ENW-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5041 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.76 грн
10+53.87 грн
100+40.85 грн
500+31.59 грн
1000+27.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHG28N65EF-GE3 sihg28n65ef.pdf
SIHG28N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 28A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3249 pF @ 100 V
товару немає в наявності
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SIHP054N65E-GE3 sihp054n65e.pdf
SIHP054N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHP054N65E-GE3 sihp054n65e.pdf
SIHP054N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
на замовлення 1037 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+528.42 грн
10+435.36 грн
100+386.27 грн
500+329.21 грн
В кошику  од. на суму  грн.
SIHP074N65E-GE3 sihp074n65e.pdf
SIHP074N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+278.35 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SIHP074N65E-GE3 sihp074n65e.pdf
SIHP074N65E-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+603.22 грн
10+411.45 грн
100+328.09 грн
В кошику  од. на суму  грн.
SUM70042M-GE3 sum70042m.pdf
SUM70042M-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET D2P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
товару немає в наявності
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SUM70042M-GE3 sum70042m.pdf
SUM70042M-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET D2P
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+483.85 грн
10+313.66 грн
100+227.21 грн
В кошику  од. на суму  грн.
SIZ328DT-T1-GE3 siz328dt.pdf
SIZ328DT-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 25V 11.1A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
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SIZ328DT-T1-GE3 siz328dt.pdf
SIZ328DT-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 25V 11.1A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.81 грн
10+48.20 грн
100+33.39 грн
500+25.07 грн
1000+23.01 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFP440 FAIRS32508-1.pdf?t.download=true&u=5oefqw
IRFP440
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 8.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5.3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRFP448 91229.pdf
IRFP448
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRFP448PBF 91229.pdf
IRFP448PBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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SQJ154EP-T1_GE3 sqj154ep.pdf
SQJ154EP-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Qualification: AEC-Q101
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SQJ154EP-T1_GE3 sqj154ep.pdf
SQJ154EP-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1234 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.56 грн
10+65.83 грн
100+51.20 грн
500+40.72 грн
1000+33.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQS142ELNW-T1_GE3 sqs142elnw.pdf
SQS142ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
Qualification: AEC-Q101
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SQS142ELNW-T1_GE3 sqs142elnw.pdf
SQS142ELNW-T1_GE3
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1872 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.93 грн
10+50.19 грн
100+39.93 грн
500+29.26 грн
1000+26.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHFU9220-GE3 sihfr922.pdf
SIHFU9220-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+110.62 грн
10+67.28 грн
100+44.69 грн
500+32.84 грн
1000+29.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF644 description 91039.pdf
IRF644
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRFP450PBF 91233.pdf
IRFP450PBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 3373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+272.96 грн
25+171.11 грн
100+160.82 грн
500+139.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFB18N50K irfb18n50k.pdf
IRFB18N50K
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
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SQD40081EL_GE3 sqd40081el.pdf
SQD40081EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+39.85 грн
4000+36.13 грн
6000+34.89 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQD40081EL_GE3 sqd40081el.pdf
SQD40081EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7649 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.15 грн
10+86.06 грн
100+58.03 грн
500+43.16 грн
1000+39.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHP10N40D-E3 sihp10n40d.pdf
SIHP10N40D-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
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IRFP9240 description
IRFP9240
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SIC403BCD-T1-GE3 sic403abcd.pdf
SIC403BCD-T1-GE3
Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+65.37 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
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