| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CRCW0201680RFKTDBC | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; 680Ω; SMD; 0201; 50mW; ±1%; 30V; -55÷155°C Quantity in set/package: 10000pcs. Resistance: 680Ω Body dimensions: 0.3x0.6x0.23mm Power: 50mW Temperature coefficient: 100ppm/°C Operating voltage: 30V Case - inch: 0201 Case - mm: 0603 Tolerance: ±1% Type of resistor: thick film Mounting: SMD Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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GRC00PB3R32WTFL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 3.3uF; 450VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3µF Operating voltage: 450V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Manufacturer series: GRC Dimensions: 8x11.5mm |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||
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GRC00PB3R32WTNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 3.3uF; 450VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3µF Operating voltage: 450V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 8x11.5mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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RS1DHE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: 13 inch reel Manufacturer standard package: 7500pcs. Leakage current: 50µA |
на замовлення 7358 шт: термін постачання 14-30 дні (днів) |
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RS1D-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||
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RS1DHE3_A/H | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A |
товару немає в наявності |
Мінімальне замовлення: 7200 шт В кошику од. на суму грн. | ||||||||||
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MBA02040C4708FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; 4.7Ω; THT; 400mW; ±1%; 0; 200V; Ø0.5x29mm Type of resistor: metal film Resistance: 4.7Ω Mounting: THT Power: 0.4W Tolerance: ±1% Manufacturer series: 0 Operating voltage: 200V Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial Length: 3.6mm Diameter: 1.6mm Quantity in set/package: 5000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-GBPC3512W | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 475A Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Features of semiconductor devices: glass passivated Kind of package: bulk |
на замовлення 282 шт: термін постачання 14-30 дні (днів) |
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| GBPC3504W-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.1mm Kind of package: bulk Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| GBPC3504-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| GBPC35005-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| GBPC3501-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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RCA06038K06FKEC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 8.06kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 8.06kΩ Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||
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CRCW06038K06FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 8.06kΩ; SMD; 0603; 100mW,125mW; ±1% Type of resistor: thick film Resistance: 8.06kΩ Case - inch: 0603 Case - mm: 1608 Power: 0.1W; 0.125W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Mounting: SMD Body dimensions: 1.55x0.85x0.45mm Max. operating voltage: 75V |
на замовлення 200000 шт: термін постачання 14-30 дні (днів) |
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TZS4688-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD80; single diode Tolerance: ±5% Mounting: SMD Power dissipation: 0.5W Semiconductor structure: single diode Case: SOD80 Zener voltage: 4.7V Type of diode: Zener |
товару немає в наявності |
Мінімальне замовлення: 12500 шт В кошику од. на суму грн. | ||||||||||
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MMSZ4688-HE3_A-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode Tolerance: ±5% Mounting: SMD Power dissipation: 0.5W Application: automotive industry Semiconductor structure: single diode Case: SOD123 Zener voltage: 4.7V Type of diode: Zener |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||
| BFC233910224 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; X2; 0.22uF; 310V; 630VDC; 17.5x7x13.5mm Terminal pitch: 15mm Mounting: THT Kind of capacitor: X2 Leads: 2pin Body dimensions: 17.5x7x13.5mm Type of capacitor: polypropylene Capacitance: 0.22µF Operating voltage: 310V; 630V DC Tolerance: ±10% |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | |||||||||||
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RCA0603280RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 280Ω; 0603; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 280Ω Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 100000 шт В кошику од. на суму грн. | ||||||||||
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RCA0603280RFKEC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 280Ω; 0603; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 280Ω Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||
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CRCW0603280RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 280Ω; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Mounting: SMD Operating temperature: -55...155°C Resistance: 280Ω Body dimensions: 1.55x0.85x0.45mm Power: 0.125W Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Quantity in set/package: 5000pcs. Tolerance: ±1% |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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MCT06030C2800FP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V Type of resistor: thin film Mounting: SMD Manufacturer series: MCT0603 Operating temperature: -55...155°C Version: 0 Resistance: 280Ω Power: 0.125W Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Tolerance: ±1% |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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MCT06030C2800DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 280Ω Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Operating voltage: 75V Temperature coefficient: 50ppm/°C Operating temperature: -55...155°C Version: 0 Roll diameter max.: 180mm Mounting: SMD Manufacturer series: MCT0603 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
| VO14642AT | VISHAY |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1÷1.5VDC; Icntrl max: 50mA; 2A Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1...1.5V DC Control current max.: 50mA Max. operating current: 2A Relay variant: 1-phase On-state resistance: 0.25Ω Mounting: PCB Case: DIP6 Insulation voltage: 5.3kV Switched voltage: max. 60V Operating temperature: -55...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
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5KP36AHE3_A/C | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 40÷44.2V; unidirectional; P600; TransZorb®; 5KP Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Semiconductor structure: unidirectional Case: P600 Mounting: THT Leakage current: 2µA Manufacturer series: 5KP Technology: TransZorb® Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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293D336X9020D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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| MKP1848SE58070JP4C | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 8uF; 700VDC; Leads: radial; THT; ESR: 11mΩ Type of capacitor: polypropylene Capacitance: 8µF Operating voltage: 700V DC Tolerance: ±5% Terminal pitch: 37.49mm Conform to the norm: AEC-Q200 Operating temperature: -40...105°C Mounting: THT ESR value: 11mΩ Leads: radial |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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SMBJ6.5CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22V Max. forward impulse current: 53.6A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.5mA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||
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SMBJ6.5CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22V Max. forward impulse current: 53.6A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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SIHD7N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 40nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SIHD7N60E-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SIHF7N60E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 40nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIHP7N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 78W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 40nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI3458BDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 3.3W Case: SC74; TSOP6 Mounting: SMD Pulsed drain current: 10A Gate charge: 11nC Technology: TrenchFET® Drain current: 4.1A Kind of channel: enhancement Drain-source voltage: 60V Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 128mΩ |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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SI3459BDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A Pulsed drain current: -8A Power dissipation: 3.3W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 288mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
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SI3437DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 790mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI3457CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Pulsed drain current: -20A Power dissipation: 3W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 113mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SI3443DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SI3437DV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 790mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SI3483DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -30A Power dissipation: 3W Case: SC74; TSOP6 On-state resistance: 51.3mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SI3477DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -40A Power dissipation: 4.2W Case: SC74; TSOP6 Gate-source voltage: ±10V On-state resistance: 33mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SI3493BDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -25A Power dissipation: 2.97W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 43.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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Si3493DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -32A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 51.1mΩ Mounting: SMD Gate charge: 52.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
SI3424CDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
SI3440ADV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.2A Pulsed drain current: 4A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 432mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
SI3417DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -50A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
SI3443CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
SI3443CDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
SI3440DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
Si3410DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 30A Power dissipation: 4.1W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
SI3424CDV-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
SI3429EDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -40A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 38mΩ Mounting: SMD Gate charge: 43.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
SI3473CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -20A Power dissipation: 4.2W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 36mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
|
SI3473DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -30A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 38.8mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
 |
CRCW12103K30FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C Resistance: 3.3kΩ Mounting: SMD Operating temperature: -55...155°C Power: 0.5W Type of resistor: thick film Body dimensions: 3.2x2.5x0.55mm Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Operating voltage: 200V Case - inch: 1210 Case - mm: 3225 Quantity in set/package: 5000pcs. Tolerance: ±1% |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
|
|
CRCW12103K30FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C Resistance: 3.3kΩ Mounting: SMD Operating temperature: -55...155°C Power: 0.5W Type of resistor: thick film Body dimensions: 3.2x2.5x0.55mm Operating voltage: 200V Case - inch: 1210 Case - mm: 3225 Quantity in set/package: 5000pcs. Tolerance: ±1% |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
|
|
CRCW08051K91FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V Type of resistor: thick film Resistance: 1.91kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||
| VS-EPH6007L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 520A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2.2V Reverse recovery time: 65ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| VS-C4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| VS-A5PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Max. load current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| VS-A5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Application: automotive industry Max. load current: 120A |
товару немає в наявності |
В кошику од. на суму грн. |
| CRCW0201680RFKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 680Ω; SMD; 0201; 50mW; ±1%; 30V; -55÷155°C
Quantity in set/package: 10000pcs.
Resistance: 680Ω
Body dimensions: 0.3x0.6x0.23mm
Power: 50mW
Temperature coefficient: 100ppm/°C
Operating voltage: 30V
Case - inch: 0201
Case - mm: 0603
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 680Ω; SMD; 0201; 50mW; ±1%; 30V; -55÷155°C
Quantity in set/package: 10000pcs.
Resistance: 680Ω
Body dimensions: 0.3x0.6x0.23mm
Power: 50mW
Temperature coefficient: 100ppm/°C
Operating voltage: 30V
Case - inch: 0201
Case - mm: 0603
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| GRC00PB3R32WTFL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Manufacturer series: GRC
Dimensions: 8x11.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Manufacturer series: GRC
Dimensions: 8x11.5mm
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| GRC00PB3R32WTNL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 8x11.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3.3uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 8x11.5mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| RS1DHE3_A/I |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Manufacturer standard package: 7500pcs.
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Manufacturer standard package: 7500pcs.
Leakage current: 50µA
на замовлення 7358 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.23 грн |
| 100+ | 10.78 грн |
| 500+ | 9.68 грн |
| RS1D-E3/5AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| RS1DHE3_A/H |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
товару немає в наявності
Мінімальне замовлення: 7200 шт
В кошику
од. на суму грн.
| MBA02040C4708FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; 4.7Ω; THT; 400mW; ±1%; 0; 200V; Ø0.5x29mm
Type of resistor: metal film
Resistance: 4.7Ω
Mounting: THT
Power: 0.4W
Tolerance: ±1%
Manufacturer series: 0
Operating voltage: 200V
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Length: 3.6mm
Diameter: 1.6mm
Quantity in set/package: 5000pcs.
Category: THT Resistors
Description: Resistor: metal film; 4.7Ω; THT; 400mW; ±1%; 0; 200V; Ø0.5x29mm
Type of resistor: metal film
Resistance: 4.7Ω
Mounting: THT
Power: 0.4W
Tolerance: ±1%
Manufacturer series: 0
Operating voltage: 200V
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Length: 3.6mm
Diameter: 1.6mm
Quantity in set/package: 5000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| VS-GBPC3512W |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 475A
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 475A
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
на замовлення 282 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 448.93 грн |
| 5+ | 365.08 грн |
| 10+ | 332.81 грн |
| 100+ | 241.12 грн |
| 200+ | 230.08 грн |
| GBPC3504W-E4/51 |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| GBPC3504-E4/51 |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| GBPC35005-E4/51 |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| GBPC3501-E4/51 |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
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| RCA06038K06FKEC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 8.06kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 8.06kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 8.06kΩ; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 8.06kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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Мінімальне замовлення: 20000 шт
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| CRCW06038K06FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 8.06kΩ; SMD; 0603; 100mW,125mW; ±1%
Type of resistor: thick film
Resistance: 8.06kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W; 0.125W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Mounting: SMD
Body dimensions: 1.55x0.85x0.45mm
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; 8.06kΩ; SMD; 0603; 100mW,125mW; ±1%
Type of resistor: thick film
Resistance: 8.06kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W; 0.125W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Mounting: SMD
Body dimensions: 1.55x0.85x0.45mm
Max. operating voltage: 75V
на замовлення 200000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 0.25 грн |
| TZS4688-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD80; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Semiconductor structure: single diode
Case: SOD80
Zener voltage: 4.7V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD80; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Semiconductor structure: single diode
Case: SOD80
Zener voltage: 4.7V
Type of diode: Zener
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Мінімальне замовлення: 12500 шт
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| MMSZ4688-HE3_A-08 |
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Application: automotive industry
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 4.7V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; SOD123; single diode
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.5W
Application: automotive industry
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 4.7V
Type of diode: Zener
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Мінімальне замовлення: 15000 шт
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| BFC233910224 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 0.22uF; 310V; 630VDC; 17.5x7x13.5mm
Terminal pitch: 15mm
Mounting: THT
Kind of capacitor: X2
Leads: 2pin
Body dimensions: 17.5x7x13.5mm
Type of capacitor: polypropylene
Capacitance: 0.22µF
Operating voltage: 310V; 630V DC
Tolerance: ±10%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 0.22uF; 310V; 630VDC; 17.5x7x13.5mm
Terminal pitch: 15mm
Mounting: THT
Kind of capacitor: X2
Leads: 2pin
Body dimensions: 17.5x7x13.5mm
Type of capacitor: polypropylene
Capacitance: 0.22µF
Operating voltage: 310V; 630V DC
Tolerance: ±10%
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Мінімальне замовлення: 750 шт
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| RCA0603280RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 280Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 280Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 280Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 280Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
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Мінімальне замовлення: 100000 шт
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| RCA0603280RFKEC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 280Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 280Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 280Ω; 0603; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 280Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
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Мінімальне замовлення: 20000 шт
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| CRCW0603280RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 280Ω; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 280Ω
Body dimensions: 1.55x0.85x0.45mm
Power: 0.125W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thick film; 280Ω; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 280Ω
Body dimensions: 1.55x0.85x0.45mm
Power: 0.125W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Quantity in set/package: 5000pcs.
Tolerance: ±1%
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Мінімальне замовлення: 5000 шт
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| MCT06030C2800FP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Manufacturer series: MCT0603
Operating temperature: -55...155°C
Version: 0
Resistance: 280Ω
Power: 0.125W
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Manufacturer series: MCT0603
Operating temperature: -55...155°C
Version: 0
Resistance: 280Ω
Power: 0.125W
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Tolerance: ±1%
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Мінімальне замовлення: 5000 шт
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| MCT06030C2800DP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 280Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Operating temperature: -55...155°C
Version: 0
Roll diameter max.: 180mm
Mounting: SMD
Manufacturer series: MCT0603
Category: SMD resistors
Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 280Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Operating temperature: -55...155°C
Version: 0
Roll diameter max.: 180mm
Mounting: SMD
Manufacturer series: MCT0603
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Мінімальне замовлення: 5000 шт
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| VO14642AT |
|
Виробник: VISHAY
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1÷1.5VDC; Icntrl max: 50mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1...1.5V DC
Control current max.: 50mA
Max. operating current: 2A
Relay variant: 1-phase
On-state resistance: 0.25Ω
Mounting: PCB
Case: DIP6
Insulation voltage: 5.3kV
Switched voltage: max. 60V
Operating temperature: -55...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1÷1.5VDC; Icntrl max: 50mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1...1.5V DC
Control current max.: 50mA
Max. operating current: 2A
Relay variant: 1-phase
On-state resistance: 0.25Ω
Mounting: PCB
Case: DIP6
Insulation voltage: 5.3kV
Switched voltage: max. 60V
Operating temperature: -55...85°C
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Мінімальне замовлення: 2000 шт
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| 5KP36AHE3_A/C |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷44.2V; unidirectional; P600; TransZorb®; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Manufacturer series: 5KP
Technology: TransZorb®
Application: automotive industry
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷44.2V; unidirectional; P600; TransZorb®; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Manufacturer series: 5KP
Technology: TransZorb®
Application: automotive industry
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Мінімальне замовлення: 800 шт
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| 293D336X9020D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 68.57 грн |
| 10+ | 47.97 грн |
| 24+ | 41.01 грн |
| 50+ | 37.27 грн |
| MKP1848SE58070JP4C |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 8uF; 700VDC; Leads: radial; THT; ESR: 11mΩ
Type of capacitor: polypropylene
Capacitance: 8µF
Operating voltage: 700V DC
Tolerance: ±5%
Terminal pitch: 37.49mm
Conform to the norm: AEC-Q200
Operating temperature: -40...105°C
Mounting: THT
ESR value: 11mΩ
Leads: radial
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 8uF; 700VDC; Leads: radial; THT; ESR: 11mΩ
Type of capacitor: polypropylene
Capacitance: 8µF
Operating voltage: 700V DC
Tolerance: ±5%
Terminal pitch: 37.49mm
Conform to the norm: AEC-Q200
Operating temperature: -40...105°C
Mounting: THT
ESR value: 11mΩ
Leads: radial
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 385.85 грн |
| SMBJ6.5CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: SMBJ
Technology: TransZorb®
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Мінімальне замовлення: 3200 шт
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| SMBJ6.5CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Technology: TransZorb®
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Мінімальне замовлення: 6000 шт
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| SIHD7N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| SIHD7N60E-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIHF7N60E-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
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| SIHP7N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
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| SI3458BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.3W
Case: SC74; TSOP6
Mounting: SMD
Pulsed drain current: 10A
Gate charge: 11nC
Technology: TrenchFET®
Drain current: 4.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 128mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.3W
Case: SC74; TSOP6
Mounting: SMD
Pulsed drain current: 10A
Gate charge: 11nC
Technology: TrenchFET®
Drain current: 4.1A
Kind of channel: enhancement
Drain-source voltage: 60V
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 128mΩ
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.75 грн |
| 10+ | 47.71 грн |
| SI3459BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.12 грн |
| 13+ | 35.15 грн |
| 50+ | 30.14 грн |
| 100+ | 28.19 грн |
| SI3437DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3457CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3443DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SI3437DV-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3483DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3W
Case: SC74; TSOP6
On-state resistance: 51.3mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3W
Case: SC74; TSOP6
On-state resistance: 51.3mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3477DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±10V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±10V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3493BDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 2.97W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 43.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 2.97W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 43.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| Si3493DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 51.1mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 51.1mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| SI3424CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3440ADV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3417DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| SI3443CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3443CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| SI3440DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| Si3410DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3424CDV-T1-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3429EDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3473CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3473DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| CRCW12103K30FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Resistance: 3.3kΩ
Mounting: SMD
Operating temperature: -55...155°C
Power: 0.5W
Type of resistor: thick film
Body dimensions: 3.2x2.5x0.55mm
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 200V
Case - inch: 1210
Case - mm: 3225
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Resistance: 3.3kΩ
Mounting: SMD
Operating temperature: -55...155°C
Power: 0.5W
Type of resistor: thick film
Body dimensions: 3.2x2.5x0.55mm
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 200V
Case - inch: 1210
Case - mm: 3225
Quantity in set/package: 5000pcs.
Tolerance: ±1%
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Мінімальне замовлення: 5000 шт
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| CRCW12103K30FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Resistance: 3.3kΩ
Mounting: SMD
Operating temperature: -55...155°C
Power: 0.5W
Type of resistor: thick film
Body dimensions: 3.2x2.5x0.55mm
Operating voltage: 200V
Case - inch: 1210
Case - mm: 3225
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Resistance: 3.3kΩ
Mounting: SMD
Operating temperature: -55...155°C
Power: 0.5W
Type of resistor: thick film
Body dimensions: 3.2x2.5x0.55mm
Operating voltage: 200V
Case - inch: 1210
Case - mm: 3225
Quantity in set/package: 5000pcs.
Tolerance: ±1%
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| CRCW08051K91FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V
Type of resistor: thick film
Resistance: 1.91kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V
Type of resistor: thick film
Resistance: 1.91kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
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Мінімальне замовлення: 100 шт
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| VS-EPH6007L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
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| VS-C4PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
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| VS-A5PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
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| VS-A5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
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