Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129021) > Сторінка 2150 з 2151
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| BTS441TGATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| TLE82092SAAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| ITS42K5DLDFXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| CYPM1115-48LQXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB interface Type of integrated circuit: USB interface |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
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IPP65R420CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.7A Power dissipation: 83.3W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BTS134DATMA1 | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
|
2EDN7524FXTMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Case: PG-DSO-8 Technology: EiceDRIVER™ Number of channels: 2 Topology: MOSFET half-bridge Mounting: SMD Supply voltage: 4.5...20V Output current: -5...5A Type of integrated circuit: driver Protection: undervoltage UVP Voltage class: 20V Kind of package: reel; tape Kind of integrated circuit: gate driver; low-side |
на замовлення 1242 шт: термін постачання 14-30 дні (днів) |
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CY8C22345-24SXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH Type of integrated circuit: PSoC microcontroller Clock frequency: 24MHz Case: SSOP28 Memory: 1kB SRAM; 16kB FLASH Number of inputs/outputs: 24 Mounting: SMD Supply voltage: 3...5.25V DC Interface: SPI; UART Integrated circuit features: CapSense Kind of core: 8-bit |
товару немає в наявності |
Мінімальне замовлення: 540 шт В кошику од. на суму грн. | ||||||||||||
| CY8C22345-24SXIT | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller Type of integrated circuit: microcontroller |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| TZ740N22KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; single thyristor; 2.2kV; 740A; BG-PB70AT-1 Max. off-state voltage: 2.2kV Load current: 740A Max. forward impulse current: 30kA Electrical mounting: FASTON connectors; screw Max. forward voltage: 1.51V Case: BG-PB70AT-1 Mechanical mounting: screw Gate current: 250mA Type of semiconductor module: thyristor Semiconductor structure: single thyristor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
FB30R06W1E3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; single-phase diode bridge; 115W Type of semiconductor module: IGBT Power dissipation: 115W Technology: EasyPIM™ 1B Mechanical mounting: screw Pulsed collector current: 60A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: AG-EASY1B-1 Gate-emitter voltage: ±20V Collector current: 30A Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BSC027N10NS5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 23A Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 23A On-state resistance: 2.7mΩ Gate charge: 89nC Kind of channel: enhancement |
на замовлення 4987 шт: термін постачання 14-30 дні (днів) |
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| IPN60R360PFD7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
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IPAN60R360PFD7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 23W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 714mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPD80P03P4L07ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -80A; 88W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -80A Power dissipation: 88W Case: DPAK; TO252 On-state resistance: 8.7mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
| BFR193FH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 80mA Power dissipation: 0.58W Case: SOT723 Current gain: 70 Mounting: SMD Frequency: 8GHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| BFP182WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 12V; 35mA; 250mW; SOT343 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 35mA Power dissipation: 0.25W Case: SOT343 Current gain: 70 Mounting: SMD Frequency: 8GHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
|
BF771E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 80mA Power dissipation: 0.58W Case: SOT23 Current gain: 70...140 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IPB80N04S404ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| IKW40T120 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 75A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 203nC Technology: Field Stop; Trench Turn-on time: 48ns |
на замовлення 207 шт: термін постачання 14-30 дні (днів) |
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XMC4800F100K1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 276kB SRAM; 1.5MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 Operating temperature: -40...125°C Kind of core: 32-bit |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||
| IPD050N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; DPAK3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 150W Case: DPAK3 On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 64nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IMCQ120R017M2HXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | |||||||||||||
| IMZC120R040M2HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; 1.2kV; 48A; 218W; TO247-4 Type of transistor: N-MOSFET Technology: SiC Drain-source voltage: 1.2kV Drain current: 48A Power dissipation: 218W Case: TO247-4 On-state resistance: 40mΩ Mounting: THT Gate charge: 39nC Kind of channel: enhancement |
на замовлення 2760 шт: термін постачання 14-30 дні (днів) |
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| ESD119B1W01005E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | |||||||||||||
| IPT015N10N5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 353A; Idm: 1200A; automotive industry Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 353A Pulsed drain current: 1.2kA On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 169nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 11 шт В кошику од. на суму грн. | |||||||||||||
| IPB70N10S312ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| IPB70N10S312ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| ESD120B1W0201E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | |||||||||||||
| TLE49663KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; bipolar; P-TSOP6-6-5; -4.2÷4.2mT; Usup: 2.7÷18VDC Case: P-TSOP6-6-5 Mounting: SMT Operating temperature: -40...150°C Supply voltage: 2.7...18V DC Type of sensor: Hall Range of detectable magnetic field: -4.2...4.2mT Kind of sensor: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TLE49645MXTSA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; unipolar; SC59; 2.7÷10.4mT; Usup: 3÷32VDC; SMT Case: SC59 Mounting: SMT Operating temperature: -40...150°C Supply voltage: 3...32V DC Type of sensor: Hall Range of detectable magnetic field: 2.7...10.4mT Kind of sensor: unipolar |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||||||||||
| AUIRFS6535TRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGNFV000 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||||
| S25FL256SAGMFM000 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||
| S25FS256SAGBHI203 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
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BSS314PEH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 13361 шт: термін постачання 14-30 дні (днів) |
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| ICL5102HVXUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; resonant LLC; PG-DSO-19; 700mA; Ch: 1; dead time Type of integrated circuit: driver Topology: resonant LLC Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-19 Output current: 0.7A Number of channels: 1 Integrated circuit features: dead time Mounting: SMD Operating voltage: 8.5...18V DC Protection: anti-overload OPP; anti-overvoltage OVP; overheating OTP; short circuit protection SCP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| ICL5102XUMA2 | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IR11682STRPBF | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
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IRFH8201TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 324A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
| T501N70TOHXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristorsDescription: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; Ø76/Ø50mm Case: BG-T7626K-1 Mounting: Press-Pack Kind of package: in-tray Max. off-state voltage: 7kV Body dimensions: Ø76/Ø50mm Load current: 640A Max. load current: 1kA Type of thyristor: hockey-puck Max. forward impulse current: 13.5kA Gate current: 350mA Features of semiconductor devices: phase control thyristor (PCT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IPW60R120C7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||
| IPW60R120CM8XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; 600V; 23A; 131W; TO247-3 Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 23A Power dissipation: 131W Case: TO247-3 On-state resistance: 0.12Ω Mounting: THT Gate charge: 24nC Kind of channel: enhancement Technology: CoolMOS™ Application: automotive industry Gate-source voltage: 20V |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||
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ICL8810XUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; flyback; PFC controller,SMPS controller,LED driver Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-8 Number of channels: 1 Integrated circuit features: soft-start function Mounting: SMD Operating voltage: 8.1...23V DC Output current: -125...250mA Protection: anti-overvoltage OVP; over current OCP; overheating OTP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ICL8800XUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; flyback; PFC controller,SMPS controller,LED driver Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-8 Number of channels: 1 Integrated circuit features: soft-start function Mounting: SMD Operating voltage: 8.1...23V DC Output current: -125...250mA Protection: anti-overvoltage OVP; over current OCP; overheating OTP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ICL8820XUMA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; flyback; PFC controller,SMPS controller,LED driver Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-8 Number of channels: 1 Integrated circuit features: soft-start function Mounting: SMD Operating voltage: 8.1...23V DC Output current: -125...250mA Protection: anti-overvoltage OVP; over current OCP; overheating OTP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPA65R650CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP Mounting: THT Power dissipation: 28W Polarisation: unipolar Technology: CoolMOS™ Drain current: 7A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220FP On-state resistance: 0.65Ω |
на замовлення 184 шт: термін постачання 14-30 дні (днів) |
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IPS65R1K5CEAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL Mounting: THT Power dissipation: 28W Polarisation: unipolar Technology: CoolMOS™ Drain current: 3.1A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: IPAK SL On-state resistance: 1.5Ω |
на замовлення 571 шт: термін постачання 14-30 дні (днів) |
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IPA65R065C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP Mounting: THT Power dissipation: 34W Polarisation: unipolar Technology: CoolMOS™ Drain current: 15A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220FP On-state resistance: 65mΩ |
на замовлення 496 шт: термін постачання 14-30 дні (днів) |
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IPP65R125C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3 Mounting: THT Power dissipation: 101W Polarisation: unipolar Technology: CoolMOS™ Drain current: 18A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 0.125Ω |
на замовлення 40 шт: термін постачання 14-30 дні (днів) |
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IPP65R095C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3 Mounting: THT Power dissipation: 128W Polarisation: unipolar Technology: CoolMOS™ Drain current: 24A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 95mΩ |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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IPA80R650CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8A; 33W; TO220-3 Mounting: THT Power dissipation: 33W Gate charge: 45nC Polarisation: unipolar Drain current: 8A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Case: TO220-3 On-state resistance: 0.56Ω |
на замовлення 99 шт: термін постачання 14-30 дні (днів) |
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| FD650R17IE4BOSA2 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT Type of semiconductor module: IGBT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||
| IPA60R180P7S | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 600V; 18A; Idm: 53A; TO220FP Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 53A Case: TO220FP On-state resistance: 0.18Ω Gate charge: 25nC Kind of channel: enhancement |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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| IKZA40N65RH5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT Type of transistor: IGBT |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||
| IPD025N06N | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 90A; Idm: 360A; 167W; DPAK3 Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 90A Power dissipation: 167W Case: DPAK3 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Pulsed drain current: 360A Application: automotive industry |
на замовлення 2440 шт: термін постачання 14-30 дні (днів) |
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IRFR3518TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 38A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 38A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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BFR35APE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.28W Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector current: 45mA Collector-emitter voltage: 15V Kind of transistor: RF Current gain: 70...140 Frequency: 5GHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BFR 35AP E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 15V; 45mA; 280mW; SOT23 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.28W Case: SOT23 Mounting: SMD Collector current: 45mA Collector-emitter voltage: 15V Current gain: 40 Frequency: 5GHz |
на замовлення 2975 шт: термін постачання 14-30 дні (днів) |
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| S25FL128LAGNFM010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 490 шт В кошику од. на суму грн. |
| BTS441TGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TLE82092SAAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| ITS42K5DLDFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CYPM1115-48LQXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface
Type of integrated circuit: USB interface
Category: USB interfaces - integrated circuits
Description: IC: USB interface
Type of integrated circuit: USB interface
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPP65R420CFDXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BTS134DATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2EDN7524FXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 4.5...20V
Output current: -5...5A
Type of integrated circuit: driver
Protection: undervoltage UVP
Voltage class: 20V
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 4.5...20V
Output current: -5...5A
Type of integrated circuit: driver
Protection: undervoltage UVP
Voltage class: 20V
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
на замовлення 1242 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.24 грн |
| 9+ | 48.96 грн |
| 10+ | 44.50 грн |
| CY8C22345-24SXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: SSOP28
Memory: 1kB SRAM; 16kB FLASH
Number of inputs/outputs: 24
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: SPI; UART
Integrated circuit features: CapSense
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: SSOP28
Memory: 1kB SRAM; 16kB FLASH
Number of inputs/outputs: 24
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: SPI; UART
Integrated circuit features: CapSense
Kind of core: 8-bit
товару немає в наявності
Мінімальне замовлення: 540 шт
В кошику
од. на суму грн.
| CY8C22345-24SXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller
Type of integrated circuit: microcontroller
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TZ740N22KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 740A; BG-PB70AT-1
Max. off-state voltage: 2.2kV
Load current: 740A
Max. forward impulse current: 30kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.51V
Case: BG-PB70AT-1
Mechanical mounting: screw
Gate current: 250mA
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 740A; BG-PB70AT-1
Max. off-state voltage: 2.2kV
Load current: 740A
Max. forward impulse current: 30kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.51V
Case: BG-PB70AT-1
Mechanical mounting: screw
Gate current: 250mA
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
товару немає в наявності
В кошику
од. на суму грн.
| FB30R06W1E3BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Type of semiconductor module: IGBT
Power dissipation: 115W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 60A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Type of semiconductor module: IGBT
Power dissipation: 115W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 60A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
товару немає в наявності
В кошику
од. на суму грн.
| BSC027N10NS5 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 23A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 23A
On-state resistance: 2.7mΩ
Gate charge: 89nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 23A
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 23A
On-state resistance: 2.7mΩ
Gate charge: 89nC
Kind of channel: enhancement
на замовлення 4987 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 304.63 грн |
| 30+ | 250.61 грн |
| 50+ | 244.82 грн |
| 60+ | 243.17 грн |
| 100+ | 239.86 грн |
| 200+ | 214.22 грн |
| IPN60R360PFD7SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPAN60R360PFD7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| IPD80P03P4L07ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -80A; 88W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -80A
Power dissipation: 88W
Case: DPAK; TO252
On-state resistance: 8.7mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -80A; 88W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -80A
Power dissipation: 88W
Case: DPAK; TO252
On-state resistance: 8.7mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BFR193FH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 80mA; 580mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT723
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BFP182WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 35mA; 250mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 35mA
Power dissipation: 0.25W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 35mA; 250mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 35mA
Power dissipation: 0.25W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BF771E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT23
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT23
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
товару немає в наявності
В кошику
од. на суму грн.
| IPB80N04S404ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IKW40T120 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 75A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Technology: Field Stop; Trench
Turn-on time: 48ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 75A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 203nC
Technology: Field Stop; Trench
Turn-on time: 48ns
на замовлення 207 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 639.54 грн |
| 10+ | 535.14 грн |
| 30+ | 495.44 грн |
| 50+ | 487.17 грн |
| 60+ | 436.71 грн |
| 100+ | 432.58 грн |
| XMC4800F100K1536AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Kind of core: 32-bit
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику
од. на суму грн.
| IPD050N10N5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: DPAK3
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: DPAK3
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IMCQ120R017M2HXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IMZC120R040M2HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; 1.2kV; 48A; 218W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 48A
Power dissipation: 218W
Case: TO247-4
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; 1.2kV; 48A; 218W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Drain-source voltage: 1.2kV
Drain current: 48A
Power dissipation: 218W
Case: TO247-4
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
на замовлення 2760 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 240+ | 566.50 грн |
| ESD119B1W01005E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| IPT015N10N5 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 353A; Idm: 1200A; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 353A
Pulsed drain current: 1.2kA
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 353A; Idm: 1200A; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 353A
Pulsed drain current: 1.2kA
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 11 шт
В кошику
од. на суму грн.
| IPB70N10S312ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IPB70N10S312ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ESD120B1W0201E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| TLE49663KHTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-TSOP6-6-5; -4.2÷4.2mT; Usup: 2.7÷18VDC
Case: P-TSOP6-6-5
Mounting: SMT
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Type of sensor: Hall
Range of detectable magnetic field: -4.2...4.2mT
Kind of sensor: bipolar
Category: Hall Sensors
Description: Sensor: Hall; bipolar; P-TSOP6-6-5; -4.2÷4.2mT; Usup: 2.7÷18VDC
Case: P-TSOP6-6-5
Mounting: SMT
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Type of sensor: Hall
Range of detectable magnetic field: -4.2...4.2mT
Kind of sensor: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| TLE49645MXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 2.7÷10.4mT; Usup: 3÷32VDC; SMT
Case: SC59
Mounting: SMT
Operating temperature: -40...150°C
Supply voltage: 3...32V DC
Type of sensor: Hall
Range of detectable magnetic field: 2.7...10.4mT
Kind of sensor: unipolar
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 2.7÷10.4mT; Usup: 3÷32VDC; SMT
Case: SC59
Mounting: SMT
Operating temperature: -40...150°C
Supply voltage: 3...32V DC
Type of sensor: Hall
Range of detectable magnetic field: 2.7...10.4mT
Kind of sensor: unipolar
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| AUIRFS6535TRL |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| S25FL256SAGNFV000 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S25FL256SAGMFM000 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| S25FS256SAGBHI203 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BSS314PEH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 13361 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.83 грн |
| 34+ | 12.32 грн |
| 50+ | 10.09 грн |
| 100+ | 9.26 грн |
| 213+ | 4.47 грн |
| 586+ | 4.22 грн |
| ICL5102HVXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-19; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-19
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.5...18V DC
Protection: anti-overload OPP; anti-overvoltage OVP; overheating OTP; short circuit protection SCP
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-19; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-19
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.5...18V DC
Protection: anti-overload OPP; anti-overvoltage OVP; overheating OTP; short circuit protection SCP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ICL5102XUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IR11682STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRFH8201TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 324A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 324A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| T501N70TOHXPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; Ø76/Ø50mm
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 7kV
Body dimensions: Ø76/Ø50mm
Load current: 640A
Max. load current: 1kA
Type of thyristor: hockey-puck
Max. forward impulse current: 13.5kA
Gate current: 350mA
Features of semiconductor devices: phase control thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; Ø76/Ø50mm
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 7kV
Body dimensions: Ø76/Ø50mm
Load current: 640A
Max. load current: 1kA
Type of thyristor: hockey-puck
Max. forward impulse current: 13.5kA
Gate current: 350mA
Features of semiconductor devices: phase control thyristor (PCT)
товару немає в наявності
В кошику
од. на суму грн.
| IPW60R120C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| IPW60R120CM8XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 23A; 131W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 131W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 24nC
Kind of channel: enhancement
Technology: CoolMOS™
Application: automotive industry
Gate-source voltage: 20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 23A; 131W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 131W
Case: TO247-3
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 24nC
Kind of channel: enhancement
Technology: CoolMOS™
Application: automotive industry
Gate-source voltage: 20V
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| ICL8810XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Integrated circuit features: soft-start function
Mounting: SMD
Operating voltage: 8.1...23V DC
Output current: -125...250mA
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Integrated circuit features: soft-start function
Mounting: SMD
Operating voltage: 8.1...23V DC
Output current: -125...250mA
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
товару немає в наявності
В кошику
од. на суму грн.
| ICL8800XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Integrated circuit features: soft-start function
Mounting: SMD
Operating voltage: 8.1...23V DC
Output current: -125...250mA
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Integrated circuit features: soft-start function
Mounting: SMD
Operating voltage: 8.1...23V DC
Output current: -125...250mA
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
товару немає в наявності
В кошику
од. на суму грн.
| ICL8820XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Integrated circuit features: soft-start function
Mounting: SMD
Operating voltage: 8.1...23V DC
Output current: -125...250mA
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Integrated circuit features: soft-start function
Mounting: SMD
Operating voltage: 8.1...23V DC
Output current: -125...250mA
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
товару немає в наявності
В кошику
од. на суму грн.
| IPA65R650CEXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Mounting: THT
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.65Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Mounting: THT
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.65Ω
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.42 грн |
| 10+ | 67.16 грн |
| 27+ | 35.23 грн |
| 74+ | 33.33 грн |
| IPS65R1K5CEAKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Mounting: THT
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: IPAK SL
On-state resistance: 1.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; 28W; IPAK SL
Mounting: THT
Power dissipation: 28W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 3.1A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: IPAK SL
On-state resistance: 1.5Ω
на замовлення 571 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.67 грн |
| 25+ | 20.51 грн |
| 52+ | 18.20 грн |
| 143+ | 17.29 грн |
| IPA65R065C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP
Mounting: THT
Power dissipation: 34W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 65mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP
Mounting: THT
Power dissipation: 34W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 65mΩ
на замовлення 496 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 431.11 грн |
| 3+ | 358.14 грн |
| 8+ | 339.11 грн |
| 100+ | 325.88 грн |
| IPP65R125C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Mounting: THT
Power dissipation: 101W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.125Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Mounting: THT
Power dissipation: 101W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.125Ω
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 357.18 грн |
| 6+ | 176.17 грн |
| 15+ | 167.08 грн |
| IPP65R095C7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Mounting: THT
Power dissipation: 128W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 95mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Mounting: THT
Power dissipation: 128W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 95mΩ
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.63 грн |
| 5+ | 202.64 грн |
| 13+ | 191.06 грн |
| IPA80R650CEXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 33W; TO220-3
Mounting: THT
Power dissipation: 33W
Gate charge: 45nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Case: TO220-3
On-state resistance: 0.56Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 33W; TO220-3
Mounting: THT
Power dissipation: 33W
Gate charge: 45nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Case: TO220-3
On-state resistance: 0.56Ω
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 199.52 грн |
| 10+ | 110.01 грн |
| 14+ | 68.65 грн |
| 39+ | 64.51 грн |
| FD650R17IE4BOSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT
Type of semiconductor module: IGBT
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| IPA60R180P7S |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 18A; Idm: 53A; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 53A
Case: TO220FP
On-state resistance: 0.18Ω
Gate charge: 25nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 18A; Idm: 53A; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 53A
Case: TO220FP
On-state resistance: 0.18Ω
Gate charge: 25nC
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 128.27 грн |
| 50+ | 110.83 грн |
| 100+ | 105.04 грн |
| 300+ | 90.98 грн |
| 500+ | 90.15 грн |
| IKZA40N65RH5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| IPD025N06N |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 90A; Idm: 360A; 167W; DPAK3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: DPAK3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 360A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 90A; Idm: 360A; 167W; DPAK3
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: DPAK3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 360A
Application: automotive industry
на замовлення 2440 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 114.90 грн |
| 50+ | 100.08 грн |
| 100+ | 95.94 грн |
| 300+ | 91.81 грн |
| 500+ | 82.71 грн |
| IRFR3518TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BFR35APE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 45mA
Collector-emitter voltage: 15V
Kind of transistor: RF
Current gain: 70...140
Frequency: 5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 45mA
Collector-emitter voltage: 15V
Kind of transistor: RF
Current gain: 70...140
Frequency: 5GHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BFR 35AP E6327 |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 45mA; 280mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Collector current: 45mA
Collector-emitter voltage: 15V
Current gain: 40
Frequency: 5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 45mA; 280mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Collector current: 45mA
Collector-emitter voltage: 15V
Current gain: 40
Frequency: 5GHz
на замовлення 2975 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 293+ | 13.81 грн |
| 300+ | 10.01 грн |
| 500+ | 9.51 грн |
| 1000+ | 9.10 грн |
| S25FL128LAGNFM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 490 шт
В кошику
од. на суму грн.
















