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DG542DY-T1-E3 DG542DY-T1-E3 Vishay Siliconix 70055.pdf Description: IC SWITCH QUAD SPST 16SOIC
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DG641DJ-E3 DG641DJ-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPST-NOX4 15OHM 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
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DG641DY-E3 DG641DY-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
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DG641DY-T1-E3 DG641DY-T1-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
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DG642DJ-E3 DG642DJ-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 1 8OHM 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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DG642DY-E3 DG642DY-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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DG642DY-T1-E3 DG642DY-T1-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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DG643DJ-E3 DG643DJ-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 2 15OHM 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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DG643DY-E3 DG643DY-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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DG643DY-T1-E3 DG643DY-T1-E3 Vishay Siliconix DG641-643.pdf Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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DG787DQ-T1-E3 DG787DQ-T1-E3 Vishay Siliconix DG787.pdf Description: IC SWITCH SPDT X 2 2.9OHM 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.9Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: 10-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -56dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
Switch Time (Ton, Toff) (Max): 45ns, 42ns
Channel Capacitance (CS(off), CD(off)): 12pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG884DN-E3 DG884DN-E3 Vishay Siliconix dg884.pdf Description: IC VIDEO MULTIPLEXER 8X4 44PLCC
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DG9232DQ-T1-E3 DG9232DQ-T1-E3 Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8MSOP
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DG9232DY-E3 DG9232DY-E3 Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9232DY-T1-E3 DG9232DY-T1-E3 Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9233DQ-T1-E3 DG9233DQ-T1-E3 Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8MSOP
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DG9233DY-E3 DG9233DY-E3 Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9233DY-T1-E3 DG9233DY-T1-E3 Vishay Siliconix dg9232.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9262DQ-T1-E3 DG9262DQ-T1-E3 Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8MSOP
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DG9262DY-E3 DG9262DY-E3 Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9262DY-T1-E3 DG9262DY-T1-E3 Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9263DQ-T1-E3 DG9263DQ-T1-E3 Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8MSOP
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DG9263DY-E3 DG9263DY-E3 Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9263DY-T1-E3 DG9263DY-T1-E3 Vishay Siliconix dg9262.pdf Description: IC SWITCH DUAL SPST 8SOIC
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DG9408DN-T1-E4 DG9408DN-T1-E4 Vishay Siliconix 71870.pdf Description: IC MUX ANA DUAL 8/4CH 16QFN
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DG9409DN-T1-E4 DG9409DN-T1-E4 Vishay Siliconix 71870.pdf Description: IC MUX ANA DUAL 8/4CH 16QFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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DG9411DL-T1-E3 DG9411DL-T1-E3 Vishay Siliconix dg9411.pdf Description: IC ANALOG SWITCH SPDT LV SC70-6
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DG9414DQ-T1-E3 DG9414DQ-T1-E3 Vishay Siliconix dg9414.pdf Description: IC MULTIPLEXER DUAL 4X1 10MSOP
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DG9415DQ-T1-E3 DG9415DQ-T1-E3 Vishay Siliconix dg9414.pdf Description: IC MULTIPLEXER DUAL 4X1 10MSOP
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DG9431DV-T1-E3 DG9431DV-T1-E3 Vishay Siliconix dg9431.pdf Description: IC ANALOG SWITCH SPDT LV 6TSOP
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
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DG9431DY-E3 DG9431DY-E3 Vishay Siliconix dg9431.pdf Description: IC ANALOG SWITCH SPDT LV 8SOIC
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DG9431DY-T1-E3 DG9431DY-T1-E3 Vishay Siliconix dg9431.pdf Description: IC ANALOG SWITCH SPDT LV 8SOIC
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DG9432DQ-T1-E3 DG9432DQ-T1-E3 Vishay Siliconix dg9432.pdf Description: IC SWITCH DUAL SPST 8MSOP
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DG9432DS-T1-E3 Vishay Siliconix dg9432.pdf Description: IC SWITCH DUAL SPST SOT23-8
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DG9433DQ-T1-E3 DG9433DQ-T1-E3 Vishay Siliconix dg9432.pdf Description: IC SWITCH DUAL SPST 8MSOP
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DG9433DS-T1-E3 Vishay Siliconix dg9432.pdf Description: IC SWITCH DUAL SPST SOT23-8
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DG9434DQ-T1-E3 DG9434DQ-T1-E3 Vishay Siliconix Description: IC SW SPST-NO/NCX2 30OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Charge Injection: 0.36pC
Crosstalk: -96dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 35ns, 18ns
Channel Capacitance (CS(off), CD(off)): 7.5pF, 7.8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG9434DS-T1-E3 Vishay Siliconix dg9432.pdf Description: IC SWITCH DUAL SPST SOT23-8
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DG9451EN-T1-E4 DG9451EN-T1-E4 Vishay Siliconix Description: IC MUX 8:1 105OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 105Ohm
-3db Bandwidth: 270MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.79pC
Crosstalk: -90dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 185ns, 130ns
Channel Capacitance (CS(off), CD(off)): 1pF, 9pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
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DG9461DV-T1-E3 DG9461DV-T1-E3 Vishay Siliconix dg9461.pdf Description: IC SWITCH LV SPDT 6TSOP
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DG9461DY-E3 DG9461DY-E3 Vishay Siliconix dg9461.pdf Description: IC SWITCH LV SPDT 8SOIC
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DG9461DY-T1-E3 DG9461DY-T1-E3 Vishay Siliconix dg9461.pdf Description: IC SWITCH LV SPDT 8SOIC
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DG9636EN-T1-E4 DG9636EN-T1-E4 Vishay Siliconix dg9636.pdf Description: IC SW SPDTX2 110OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Charge Injection: 23.5pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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IRF510STRLPBF IRF510STRLPBF Vishay Siliconix sihf510s.pdf Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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IRF510STRRPBF IRF510STRRPBF Vishay Siliconix sihf510s.pdf Description: MOSFET N-CH 100V 5.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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IRF520SPBF IRF520SPBF Vishay Siliconix sihf520s.pdf Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 2207 шт:
термін постачання 21-31 дні (днів)
3+116.19 грн
50+59.85 грн
100+57.70 грн
500+42.90 грн
1000+40.76 грн
Мінімальне замовлення: 3
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IRF610STRRPBF IRF610STRRPBF Vishay Siliconix sih610s.pdf Description: MOSFET N-CH 200V 3.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
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IRF614STRRPBF IRF614STRRPBF Vishay Siliconix sihf614s.pdf Description: MOSFET N-CH 250V 2.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
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IRF620STRLPBF IRF620STRLPBF Vishay Siliconix sihf620s.pdf Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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IRF630STRLPBF IRF630STRLPBF Vishay Siliconix sih630s.pdf Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+55.56 грн
Мінімальне замовлення: 800
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IRF634STRRPBF IRF634STRRPBF Vishay Siliconix sihf634s.pdf Description: MOSFET N-CH 250V 8.1A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
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IRF644STRRPBF IRF644STRRPBF Vishay Siliconix sihf644s.pdf Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRF710STRLPBF IRF710STRLPBF Vishay Siliconix sihf710s.pdf Description: MOSFET N-CH 400V 2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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IRF730ALPBF IRF730ALPBF Vishay Siliconix sihf730a.pdf Description: MOSFET N-CH 400V 5.5A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF730ASTRLPBF IRF730ASTRLPBF Vishay Siliconix sihf730a.pdf Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF730ASTRRPBF IRF730ASTRRPBF Vishay Siliconix sihf730a.pdf Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF730STRRPBF IRF730STRRPBF Vishay Siliconix sihf730s.pdf Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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IRF740STRRPBF IRF740STRRPBF Vishay Siliconix sihf740s.pdf Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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IRF820STRRPBF IRF820STRRPBF Vishay Siliconix sihf820s.pdf Description: MOSFET N-CH 500V 2.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+63.74 грн
Мінімальне замовлення: 800
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IRF830ASTRLPBF IRF830ASTRLPBF Vishay Siliconix sihf830a.pdf Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
800+70.56 грн
Мінімальне замовлення: 800
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DG542DY-T1-E3 70055.pdf
DG542DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
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DG641DJ-E3 DG641-643.pdf
DG641DJ-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
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DG641DY-E3 DG641-643.pdf
DG641DY-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
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DG641DY-T1-E3 DG641-643.pdf
DG641DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 15OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 4
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DG642DJ-E3 DG641-643.pdf
DG642DJ-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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DG642DY-E3 DG641-643.pdf
DG642DY-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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DG642DY-T1-E3 DG641-643.pdf
DG642DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 40pC
Crosstalk: -85dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 500mOhm
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 20pF, 20pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
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DG643DJ-E3 DG641-643.pdf
DG643DJ-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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DG643DY-E3 DG641-643.pdf
DG643DY-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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DG643DY-T1-E3 DG641-643.pdf
DG643DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 2 15OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 15V
Voltage - Supply, Dual (V±): ±3V ~ 15V
Charge Injection: 19pC
Crosstalk: -87dB @ 5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 70ns, 50ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
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DG787DQ-T1-E3 DG787.pdf
DG787DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 2 2.9OHM 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.9Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: 10-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -56dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
Switch Time (Ton, Toff) (Max): 45ns, 42ns
Channel Capacitance (CS(off), CD(off)): 12pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG884DN-E3 dg884.pdf
DG884DN-E3
Виробник: Vishay Siliconix
Description: IC VIDEO MULTIPLEXER 8X4 44PLCC
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DG9232DQ-T1-E3 dg9232.pdf
DG9232DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
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DG9232DY-E3 dg9232.pdf
DG9232DY-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9232DY-T1-E3 dg9232.pdf
DG9232DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9233DQ-T1-E3 dg9232.pdf
DG9233DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
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DG9233DY-E3 dg9232.pdf
DG9233DY-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
товару немає в наявності
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DG9233DY-T1-E3 dg9232.pdf
DG9233DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9262DQ-T1-E3 dg9262.pdf
DG9262DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
товару немає в наявності
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DG9262DY-E3 dg9262.pdf
DG9262DY-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9262DY-T1-E3 dg9262.pdf
DG9262DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9263DQ-T1-E3 dg9262.pdf
DG9263DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
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DG9263DY-E3 dg9262.pdf
DG9263DY-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9263DY-T1-E3 dg9262.pdf
DG9263DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
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DG9408DN-T1-E4 71870.pdf
DG9408DN-T1-E4
Виробник: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
товару немає в наявності
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DG9409DN-T1-E4 71870.pdf
DG9409DN-T1-E4
Виробник: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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DG9411DL-T1-E3 dg9411.pdf
DG9411DL-T1-E3
Виробник: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV SC70-6
товару немає в наявності
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DG9414DQ-T1-E3 dg9414.pdf
DG9414DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4X1 10MSOP
товару немає в наявності
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DG9415DQ-T1-E3 dg9414.pdf
DG9415DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4X1 10MSOP
товару немає в наявності
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DG9431DV-T1-E3 dg9431.pdf
DG9431DV-T1-E3
Виробник: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 6TSOP
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
DG9431DY-E3 dg9431.pdf
DG9431DY-E3
Виробник: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 8SOIC
товару немає в наявності
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DG9431DY-T1-E3 dg9431.pdf
DG9431DY-T1-E3
Виробник: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 8SOIC
товару немає в наявності
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DG9432DQ-T1-E3 dg9432.pdf
DG9432DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
товару немає в наявності
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DG9432DS-T1-E3 dg9432.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST SOT23-8
товару немає в наявності
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DG9433DQ-T1-E3 dg9432.pdf
DG9433DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
товару немає в наявності
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DG9433DS-T1-E3 dg9432.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST SOT23-8
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DG9434DQ-T1-E3
DG9434DQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 30OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 30Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Charge Injection: 0.36pC
Crosstalk: -96dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 35ns, 18ns
Channel Capacitance (CS(off), CD(off)): 7.5pF, 7.8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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DG9434DS-T1-E3 dg9432.pdf
Виробник: Vishay Siliconix
Description: IC SWITCH DUAL SPST SOT23-8
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DG9451EN-T1-E4
DG9451EN-T1-E4
Виробник: Vishay Siliconix
Description: IC MUX 8:1 105OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 105Ohm
-3db Bandwidth: 270MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.79pC
Crosstalk: -90dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 185ns, 130ns
Channel Capacitance (CS(off), CD(off)): 1pF, 9pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
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DG9461DV-T1-E3 dg9461.pdf
DG9461DV-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH LV SPDT 6TSOP
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DG9461DY-E3 dg9461.pdf
DG9461DY-E3
Виробник: Vishay Siliconix
Description: IC SWITCH LV SPDT 8SOIC
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DG9461DY-T1-E3 dg9461.pdf
DG9461DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH LV SPDT 8SOIC
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DG9636EN-T1-E4 dg9636.pdf
DG9636EN-T1-E4
Виробник: Vishay Siliconix
Description: IC SW SPDTX2 110OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Charge Injection: 23.5pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
товару немає в наявності
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IRF510STRLPBF sihf510s.pdf
IRF510STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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IRF510STRRPBF sihf510s.pdf
IRF510STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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IRF520SPBF sihf520s.pdf
IRF520SPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 2207 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.19 грн
50+59.85 грн
100+57.70 грн
500+42.90 грн
1000+40.76 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF610STRRPBF sih610s.pdf
IRF610STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
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IRF614STRRPBF sihf614s.pdf
IRF614STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 2.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
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IRF620STRLPBF sihf620s.pdf
IRF620STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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IRF630STRLPBF sih630s.pdf
IRF630STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+55.56 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRF634STRRPBF sihf634s.pdf
IRF634STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
товару немає в наявності
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IRF644STRRPBF sihf644s.pdf
IRF644STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRF710STRLPBF sihf710s.pdf
IRF710STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товару немає в наявності
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IRF730ALPBF sihf730a.pdf
IRF730ALPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF730ASTRLPBF sihf730a.pdf
IRF730ASTRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF730ASTRRPBF sihf730a.pdf
IRF730ASTRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF730STRRPBF sihf730s.pdf
IRF730STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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IRF740STRRPBF sihf740s.pdf
IRF740STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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IRF820STRRPBF sihf820s.pdf
IRF820STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+63.74 грн
Мінімальне замовлення: 800
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IRF830ASTRLPBF sihf830a.pdf
IRF830ASTRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+70.56 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
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