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S27KS0642GABHB020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0642GABHI020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0642GABHI023 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0642GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0642GABHV023 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0643GABHA023 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0643GABHI020 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0643GABHI023 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
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S27KS0643GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrat Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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IRF9321TRPBF IRF9321TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AF519FDEBBF1A303005056AB0C4F&compId=irf9321pbf.pdf?ci_sign=e55e1a56517797e636b823a1005718be3fe04559 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
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IRF9321TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BSC112N06LDATMA1 INFINEON TECHNOLOGIES Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+43.06 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC094N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 47A; 36W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 47A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 9.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
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IAUA210N10S5N024AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA210N10S5N024-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39bd6b0b3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IRF7324TRPBF IRF7324TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219F09AAF424F1A303005056AB0C4F&compId=irf7324pbf.pdf?ci_sign=7f4dd42a2e4cfa06767174805d80f49497471ba7 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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S27KL0642GABHB020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S27KL0642GABHI020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S27KL0642GABHM023 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_HyperRAM_Self-Refresh_DRAM_3_0_V_1_8_V_64-Mbit_Automotive-E_Grade_1_Preliminary-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7d43f151a Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S27KL0642GABHV020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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IRF2903ZPBF IRF2903ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABD2F1A6F5005056AB5A8F&compId=irf2903z.pdf?ci_sign=96164f8a9d156aa3fbdb1b02050d7b0006b8435e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
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CY62146EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62146EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV18LL-55BVXIT INFINEON TECHNOLOGIES ?docID=45535 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45B2XIT INFINEON TECHNOLOGIES ?docID=45537 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45BVXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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BCR431UXTSA1 BCR431UXTSA1 INFINEON TECHNOLOGIES Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Case: PG-SOT23-6
Topology: single transistor
Output current: 20...100mA
Number of channels: 1
Operating voltage: 6...42V DC
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
16+28.14 грн
18+22.96 грн
70+13.38 грн
192+12.67 грн
Мінімальне замовлення: 16
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Kind of package: tube
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
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IPP072N10N3GXKSA1 IPP072N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB9B73C929C11C&compId=IPP072N10N3G-DTE.pdf?ci_sign=d260db23e3d20eeacd48a1e3bfbdec5e82d2204c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 498 шт:
термін постачання 21-30 дні (днів)
3+170.52 грн
10+69.67 грн
14+66.50 грн
39+62.55 грн
50+61.75 грн
100+60.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF135S203 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A1883DA1C219E143&compId=irf135b203.pdf?ci_sign=447bf209f2421944bd8c23f1b6b7cb8ed05b6797 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 135V
Power dissipation: 441W
Drain current: 91A
Pulsed drain current: 512A
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FM25VN10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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AIMW120R080M1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C064DB79BC60E1&compId=AIMW120R080M1.pdf?ci_sign=224fa7f7107a6dd3851015adf47da4270da17c9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 74A; 75W; TO247
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -7...20V
On-state resistance: 135mΩ
Drain current: 24A
Pulsed drain current: 74A
Power dissipation: 75W
Drain-source voltage: 1.2kV
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Case: TO247
Type of transistor: N-MOSFET
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: double series
на замовлення 1475 шт:
термін постачання 21-30 дні (днів)
23+18.76 грн
30+13.46 грн
35+11.64 грн
50+8.14 грн
100+6.96 грн
241+3.86 грн
662+3.65 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
IRF8714TRPBFXTMA1 IRF8714TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3996 шт:
термін постачання 21-30 дні (днів)
8+57.98 грн
12+33.33 грн
62+15.04 грн
171+14.17 грн
2000+13.70 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF8714TRPBF IRF8714TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE10A1A317F1A303005056AB0C4F&compId=irf8714pbf.pdf?ci_sign=da5625da86eff355c7f4b92c8bd3a6e9cc9dad9d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
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FB30R06W1E3BOMA1 FB30R06W1E3BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFDDC25858D3D7&compId=FB30R06W1E3.pdf?ci_sign=f0ac3378cf97532bc2bdcf462e9cd732b44ce192 Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Max. off-state voltage: 0.6kV
Case: AG-EASY1B-1
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FP30R06KE3BPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8A273A207160D5&compId=FP30R06KE3.pdf?ci_sign=e0571df97a6a78c1c52fa24db5a6537a3a666fe4 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 2
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 125W
Max. off-state voltage: 0.6kV
Case: AG-ECONO2C
Application: Inverter
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IDK08G120C5XTMA1 INFINEON TECHNOLOGIES Infineon-IDK08G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0d8a10f3e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 8A; 126W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 14µA
Max. forward voltage: 2.25V
Load current: 8A
Max. forward impulse current: 60A
Power dissipation: 126W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO263-2
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IDH08G120C5XKSA1 IDH08G120C5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB93EB21A136FA8&compId=IDH08G120C5-DTE.pdf?ci_sign=df6c96976833079f18e68d5401ebac26eb3dbc1e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; PG-TO220-2; Ir: 3uA
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 3µA
Max. forward voltage: 1.65V
Load current: 8A
Max. forward impulse current: 70A
Power dissipation: 126W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: PG-TO220-2
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CYUSB3304-68LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
260+485.14 грн
Мінімальне замовлення: 260
В кошику  од. на суму  грн.
CYUSB3314-88LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface; HUB controller; QFN; 410mA; Standard,USB 3.0
Type of integrated circuit: interface
Case: QFN
Mounting: SMD
Version: Standard; USB 3.0
Integrated circuit features: USB HUB
Operating temperature: -40...85°C
DC supply current: 410mA
Data transfer rate: 12Mbps
Kind of integrated circuit: HUB controller
Frequency: 26MHz
на замовлення 735 шт:
термін постачання 21-30 дні (днів)
168+450.18 грн
Мінімальне замовлення: 168
В кошику  од. на суму  грн.
CYUSB3302-68LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface; HUB controller; QFN68; 526mA; Standard,USB 3.0
Type of integrated circuit: interface
Case: QFN68
Mounting: SMD
Version: Standard; USB 3.0
Integrated circuit features: USB HUB
Operating temperature: -40...85°C
DC supply current: 526mA
Data transfer rate: 12Mbps
Kind of integrated circuit: HUB controller
на замовлення 1280 шт:
термін постачання 21-30 дні (днів)
260+293.30 грн
Мінімальне замовлення: 260
В кошику  од. на суму  грн.
CYUSB3314-BVXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: ARM microprocessor
на замовлення 745 шт:
термін постачання 21-30 дні (днів)
429+800.61 грн
Мінімальне замовлення: 429
В кошику  од. на суму  грн.
IRF100B202 IRF100B202 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Gate charge: 77nC
On-state resistance: 8.6mΩ
Gate-source voltage: ±20V
Drain current: 68A
Drain-source voltage: 100V
Power dissipation: 221W
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
4+134.71 грн
10+76.80 грн
15+63.34 грн
41+59.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF2907ZSTRLPBF IRF2907ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC616ECF1315EA&compId=IRF2907ZSTRLPBF.pdf?ci_sign=105e8c88ae939208263b240ac48c9877e0de7db5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ISC230N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+40.33 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISZ230N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISZ230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba7c28d202ac Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
5000+44.68 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLE4264GHTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD19C0AF714A0D4&compId=TLE4264.pdf?ci_sign=b96a0eb8acdd5c11d7d915ae54db9f4c090238fd Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
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TLE42644GHTMA1 INFINEON TECHNOLOGIES Infineon-TLE42644G-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf0159f94357773e18 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 5V; 100mA; PG-SOT223-4; SMD; ±3%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Output voltage: 5V
Output current: 0.1A
Case: PG-SOT223-4
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Input voltage: 5.5...40V
Number of channels: 1
Protection: overheating OTP; short circuit protection SCP
Application: automotive industry
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
4000+66.50 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 2958 шт:
термін постачання 21-30 дні (днів)
3+169.67 грн
10+108.46 грн
17+57.80 грн
45+54.63 грн
1000+53.84 грн
1500+52.25 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T1901N80TOHXPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DDC3AE3FA1220D3&compId=T1901N.pdf?ci_sign=d739f38cc9ebb3d55674a5768e63ae1c4c8bcbdc Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Max. off-state voltage: 8kV
Load current: 2.1kA
Case: BG-T15035K-1
Max. forward impulse current: 67kA
Gate current: 350mA
Type of thyristor: hockey-puck
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 3.3kA
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TT190N16SOFHPSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9BCD6B47C773D1&compId=TT190N16SOF.pdf?ci_sign=a72e6f77f7890384766d713fd7c6ce0a1724ce13 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 190A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 190A
Case: BG-PB34SB-1
Max. forward voltage: 1.52V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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STT1900N18P55XPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACEEAB795F4EE0D4&compId=STT1900N18P55.pdf?ci_sign=6c68556c6782b4d6de9edb2926a00240e33ff8bd Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 1.9kA; BG-PS55-1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 1.9kA
Case: BG-PS55-1
Max. forward voltage: 1.32V
Max. forward impulse current: 14kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
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CY62177EV30LL-55BAXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62177EV18LL-70BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
товару немає в наявності
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CY62177EV30LL-55ZXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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BAW101E6327HTSA1 BAW101E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB81D40F0D6E469&compId=BAW101E6327HTSA1.pdf?ci_sign=a7075f50f6a18d06ea45d2ff461141e6063d316e Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Power dissipation: 0.35W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 1µs
Load current: 0.25A
Max. off-state voltage: 300V
Semiconductor structure: double independent
на замовлення 1620 шт:
термін постачання 21-30 дні (днів)
40+11.43 грн
50+8.71 грн
100+7.68 грн
135+6.97 грн
370+6.57 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BFR380L3E6327 BFR380L3E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DC0BC51BC11C&compId=BFR380L3E6327-dte.pdf?ci_sign=b5f19b4970edb76116e8ca3bf21f1178122d9548 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
на замовлення 11862 шт:
термін постачання 21-30 дні (днів)
84+5.12 грн
97+4.12 грн
101+3.93 грн
248+3.76 грн
500+3.74 грн
680+3.55 грн
2500+3.42 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
BFR380FH6327 BFR380FH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DA5C602CE11C&compId=BFR380FH6327-dte.pdf?ci_sign=f554be1c0ad7074722cef881db18471561449346 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
на замовлення 5595 шт:
термін постачання 21-30 дні (днів)
16+28.14 грн
20+20.11 грн
100+12.03 грн
105+8.95 грн
287+8.47 грн
500+8.39 грн
1000+8.15 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BFR380L3E6327XTMA1 INFINEON TECHNOLOGIES BFR380L3E6327XTMA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)
15000+6.99 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BTS3046SDLATMA1 INFINEON TECHNOLOGIES Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 46mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Output voltage: 60V
товару немає в наявності
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S27KS0642GABHB020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S27KS0642GABHI020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S27KS0642GABHI023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S27KS0642GABHV020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0642GABHV023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S27KS0643GABHA023 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0643GABHI020 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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S27KS0643GABHI023 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0643GABHV020 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrat
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
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IRF9321TRPBF pVersion=0046&contRep=ZT&docId=E221AF519FDEBBF1A303005056AB0C4F&compId=irf9321pbf.pdf?ci_sign=e55e1a56517797e636b823a1005718be3fe04559
IRF9321TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2.5W
товару немає в наявності
В кошику  од. на суму  грн.
IRF9321TRPBFXTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
Виробник: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BSC112N06LDATMA1
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+43.06 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC094N06LS5ATMA1 Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 47A; 36W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 47A
Power dissipation: 36W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 9.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
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IAUA210N10S5N024AUMA1 Infineon-IAUA210N10S5N024-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39bd6b0b3b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
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IRF7324TRPBF pVersion=0046&contRep=ZT&docId=E2219F09AAF424F1A303005056AB0C4F&compId=irf7324pbf.pdf?ci_sign=7f4dd42a2e4cfa06767174805d80f49497471ba7
IRF7324TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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S27KL0642GABHB020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KL0642GABHI020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S27KL0642GABHM023 Infineon-S27KL0642_S27KS0642_HyperRAM_Self-Refresh_DRAM_3_0_V_1_8_V_64-Mbit_Automotive-E_Grade_1_Preliminary-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7d43f151a
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S27KL0642GABHV020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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IRF2903ZPBF pVersion=0046&contRep=ZT&docId=E1C04E3AF9ABD2F1A6F5005056AB5A8F&compId=irf2903z.pdf?ci_sign=96164f8a9d156aa3fbdb1b02050d7b0006b8435e
IRF2903ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
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CY62146EV30LL-45BVXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
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CY62146EV30LL-45ZSXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
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CY62147EV18LL-55BVXIT ?docID=45535
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
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CY62147EV30LL-45B2XIT ?docID=45537
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
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CY62147EV30LL-45BVXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Case: VFBGA48
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
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BCR431UXTSA1 Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a
BCR431UXTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Case: PG-SOT23-6
Topology: single transistor
Output current: 20...100mA
Number of channels: 1
Operating voltage: 6...42V DC
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.14 грн
18+22.96 грн
70+13.38 грн
192+12.67 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Kind of package: tube
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
товару немає в наявності
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IPP072N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB9B73C929C11C&compId=IPP072N10N3G-DTE.pdf?ci_sign=d260db23e3d20eeacd48a1e3bfbdec5e82d2204c
IPP072N10N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 498 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+170.52 грн
10+69.67 грн
14+66.50 грн
39+62.55 грн
50+61.75 грн
100+60.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF135S203 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A1883DA1C219E143&compId=irf135b203.pdf?ci_sign=447bf209f2421944bd8c23f1b6b7cb8ed05b6797
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.27µC
On-state resistance: 8.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 135V
Power dissipation: 441W
Drain current: 91A
Pulsed drain current: 512A
товару немає в наявності
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FM25VN10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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AIMW120R080M1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C064DB79BC60E1&compId=AIMW120R080M1.pdf?ci_sign=224fa7f7107a6dd3851015adf47da4270da17c9c
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 74A; 75W; TO247
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -7...20V
On-state resistance: 135mΩ
Drain current: 24A
Pulsed drain current: 74A
Power dissipation: 75W
Drain-source voltage: 1.2kV
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Case: TO247
Type of transistor: N-MOSFET
товару немає в наявності
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BAT5404E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5404E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT23
Mounting: SMD
Type of diode: Schottky rectifying
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: double series
на замовлення 1475 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.76 грн
30+13.46 грн
35+11.64 грн
50+8.14 грн
100+6.96 грн
241+3.86 грн
662+3.65 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
IRF8714TRPBFXTMA1
IRF8714TRPBFXTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3996 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.98 грн
12+33.33 грн
62+15.04 грн
171+14.17 грн
2000+13.70 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF8714TRPBF pVersion=0046&contRep=ZT&docId=E221AE10A1A317F1A303005056AB0C4F&compId=irf8714pbf.pdf?ci_sign=da5625da86eff355c7f4b92c8bd3a6e9cc9dad9d
IRF8714TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
товару немає в наявності
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FB30R06W1E3BOMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFDDC25858D3D7&compId=FB30R06W1E3.pdf?ci_sign=f0ac3378cf97532bc2bdcf462e9cd732b44ce192
FB30R06W1E3BOMA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 115W
Max. off-state voltage: 0.6kV
Case: AG-EASY1B-1
товару немає в наявності
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FP30R06KE3BPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8A273A207160D5&compId=FP30R06KE3.pdf?ci_sign=e0571df97a6a78c1c52fa24db5a6537a3a666fe4
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 30A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 2
Mechanical mounting: screw
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 60A
Power dissipation: 125W
Max. off-state voltage: 0.6kV
Case: AG-ECONO2C
Application: Inverter
товару немає в наявності
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IDK08G120C5XTMA1 Infineon-IDK08G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0d8a10f3e
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO263-2; SiC; SMD; 1.2kV; 8A; 126W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 14µA
Max. forward voltage: 2.25V
Load current: 8A
Max. forward impulse current: 60A
Power dissipation: 126W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO263-2
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IDH08G120C5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB93EB21A136FA8&compId=IDH08G120C5-DTE.pdf?ci_sign=df6c96976833079f18e68d5401ebac26eb3dbc1e
IDH08G120C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; PG-TO220-2; Ir: 3uA
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 3µA
Max. forward voltage: 1.65V
Load current: 8A
Max. forward impulse current: 70A
Power dissipation: 126W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: PG-TO220-2
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CYUSB3304-68LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
260+485.14 грн
Мінімальне замовлення: 260
В кошику  од. на суму  грн.
CYUSB3314-88LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; HUB controller; QFN; 410mA; Standard,USB 3.0
Type of integrated circuit: interface
Case: QFN
Mounting: SMD
Version: Standard; USB 3.0
Integrated circuit features: USB HUB
Operating temperature: -40...85°C
DC supply current: 410mA
Data transfer rate: 12Mbps
Kind of integrated circuit: HUB controller
Frequency: 26MHz
на замовлення 735 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
168+450.18 грн
Мінімальне замовлення: 168
В кошику  од. на суму  грн.
CYUSB3302-68LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; HUB controller; QFN68; 526mA; Standard,USB 3.0
Type of integrated circuit: interface
Case: QFN68
Mounting: SMD
Version: Standard; USB 3.0
Integrated circuit features: USB HUB
Operating temperature: -40...85°C
DC supply current: 526mA
Data transfer rate: 12Mbps
Kind of integrated circuit: HUB controller
на замовлення 1280 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
260+293.30 грн
Мінімальне замовлення: 260
В кошику  од. на суму  грн.
CYUSB3314-BVXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: ARM microprocessor
на замовлення 745 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
429+800.61 грн
Мінімальне замовлення: 429
В кошику  од. на суму  грн.
IRF100B202 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBD7E4834504143&compId=IRF100B202.pdf?ci_sign=dc0c1d246a2fcd1cfdff23f0c329ab2539115b09
IRF100B202
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Gate charge: 77nC
On-state resistance: 8.6mΩ
Gate-source voltage: ±20V
Drain current: 68A
Drain-source voltage: 100V
Power dissipation: 221W
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+134.71 грн
10+76.80 грн
15+63.34 грн
41+59.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF2907ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC616ECF1315EA&compId=IRF2907ZSTRLPBF.pdf?ci_sign=105e8c88ae939208263b240ac48c9877e0de7db5
IRF2907ZSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ISC230N10NM6ATMA1 Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+40.33 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISZ230N10NM6ATMA1 Infineon-ISZ230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba7c28d202ac
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+44.68 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLE4264GHTSA1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACD19C0AF714A0D4&compId=TLE4264.pdf?ci_sign=b96a0eb8acdd5c11d7d915ae54db9f4c090238fd
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
товару немає в наявності
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TLE42644GHTMA1 Infineon-TLE42644G-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf0159f94357773e18
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 5V; 100mA; PG-SOT223-4; SMD; ±3%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Output voltage: 5V
Output current: 0.1A
Case: PG-SOT223-4
Mounting: SMD
Operating temperature: -40...150°C
Tolerance: ±3%
Input voltage: 5.5...40V
Number of channels: 1
Protection: overheating OTP; short circuit protection SCP
Application: automotive industry
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+66.50 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFR4620TRLPBF pVersion=0046&contRep=ZT&docId=E221C49CD67085F1A303005056AB0C4F&compId=irfr4620pbf.pdf?ci_sign=e4c12440734d4ce0004c05233e417a3999fb1ada
IRFR4620TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 2958 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+169.67 грн
10+108.46 грн
17+57.80 грн
45+54.63 грн
1000+53.84 грн
1500+52.25 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T1901N80TOHXPSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9DDC3AE3FA1220D3&compId=T1901N.pdf?ci_sign=d739f38cc9ebb3d55674a5768e63ae1c4c8bcbdc
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Max. off-state voltage: 8kV
Load current: 2.1kA
Case: BG-T15035K-1
Max. forward impulse current: 67kA
Gate current: 350mA
Type of thyristor: hockey-puck
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 3.3kA
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TT190N16SOFHPSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88B9BCD6B47C773D1&compId=TT190N16SOF.pdf?ci_sign=a72e6f77f7890384766d713fd7c6ce0a1724ce13
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 190A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 190A
Case: BG-PB34SB-1
Max. forward voltage: 1.52V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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STT1900N18P55XPSA1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDACEEAB795F4EE0D4&compId=STT1900N18P55.pdf?ci_sign=6c68556c6782b4d6de9edb2926a00240e33ff8bd
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 1.9kA; BG-PS55-1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 1.9kA
Case: BG-PS55-1
Max. forward voltage: 1.32V
Max. forward impulse current: 14kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
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CY62177EV30LL-55BAXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62177EV18LL-70BAXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
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CY62177EV30LL-55ZXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
BAW101E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB81D40F0D6E469&compId=BAW101E6327HTSA1.pdf?ci_sign=a7075f50f6a18d06ea45d2ff461141e6063d316e
BAW101E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Power dissipation: 0.35W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Reverse recovery time: 1µs
Load current: 0.25A
Max. off-state voltage: 300V
Semiconductor structure: double independent
на замовлення 1620 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
40+11.43 грн
50+8.71 грн
100+7.68 грн
135+6.97 грн
370+6.57 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
BFR380L3E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DC0BC51BC11C&compId=BFR380L3E6327-dte.pdf?ci_sign=b5f19b4970edb76116e8ca3bf21f1178122d9548
BFR380L3E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSLP-3-1
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
на замовлення 11862 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
84+5.12 грн
97+4.12 грн
101+3.93 грн
248+3.76 грн
500+3.74 грн
680+3.55 грн
2500+3.42 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
BFR380FH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191DA5C602CE11C&compId=BFR380FH6327-dte.pdf?ci_sign=f554be1c0ad7074722cef881db18471561449346
BFR380FH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Type of transistor: NPN
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Collector current: 80mA
Power dissipation: 0.38W
Collector-emitter voltage: 15V
Polarisation: bipolar
Frequency: 14GHz
Kind of package: reel; tape
на замовлення 5595 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.14 грн
20+20.11 грн
100+12.03 грн
105+8.95 грн
287+8.47 грн
500+8.39 грн
1000+8.15 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BFR380L3E6327XTMA1 BFR380L3E6327XTMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15000+6.99 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BTS3046SDLATMA1 Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.6A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 46mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Output voltage: 60V
товару немає в наявності
В кошику  од. на суму  грн.
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