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IXDI609SIATR IXDI609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDD609SIA IXDD609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 971 шт:
термін постачання 14-30 дні (днів)
4+122.36 грн
10+83.54 грн
25+76.03 грн
Мінімальне замовлення: 4
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IXDD609SIATR IXDD609SIATR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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CPC1010N CPC1010N IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
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CPC1010NTR CPC1010NTR IXYS CPC1010N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
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IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
3+210.53 грн
50+177.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP12N50P IXTP12N50P IXYS IXTA12N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 282 шт:
термін постачання 14-30 дні (днів)
2+224.93 грн
3+187.14 грн
10+165.42 грн
50+149.54 грн
250+147.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH52N50P2 IXFH52N50P2 IXYS IXFH(T)52N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
1+818.73 грн
3+688.40 грн
10+635.77 грн
30+593.16 грн
120+561.42 грн
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IXTB62N50L IXTB62N50L IXYS IXTB62N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Drain-source voltage: 500V
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+3368.50 грн
3+2766.98 грн
10+2486.27 грн
В кошику  од. на суму  грн.
IXTN62N50L IXTN62N50L IXYS IXTN62N50L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Pulsed drain current: 150A
Gate-source voltage: ±40V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Linear™
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IXTP02N50D IXTP02N50D IXYS IXTP02N50D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 5ns
Gate charge: 0.12µC
On-state resistance: 30Ω
Drain current: 0.2A
Drain-source voltage: 500V
Kind of channel: depletion
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IXFH42N50P2 IXFH42N50P2 IXYS IXFH(T)42N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 92nC
On-state resistance: 0.145Ω
Drain current: 42A
Drain-source voltage: 500V
Kind of channel: enhancement
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IXFP12N50P IXFP12N50P IXYS IXF_12N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
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IXFT52N50P2 IXFT52N50P2 IXYS IXFH(T)52N50P2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
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CLA50E1200HB CLA50E1200HB IXYS CLA50E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 50A
Case: TO247AD
Max. load current: 79A
Max. forward impulse current: 0.65kA
Max. off-state voltage: 1.2kV
Mounting: THT
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
2+322.48 грн
5+284.89 грн
10+271.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS CLA50E1200TC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50/80mA
Load current: 50A
Case: D3PAK
Max. load current: 79A
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
Mounting: SMD
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
1+611.80 грн
10+487.90 грн
30+428.58 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TRL IXYS Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Kind of package: reel; tape
Gate current: 50/80mA
Load current: 50A
Case: D3PAK
Max. load current: 79A
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
Mounting: SMD
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PD2401 PD2401 IXYS PD2401.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Case: DIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
1+454.35 грн
25+403.52 грн
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IX4427N IX4427N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1128 шт:
термін постачання 14-30 дні (днів)
7+68.38 грн
10+47.70 грн
25+40.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IX4428N IX4428N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Supply voltage: 4.5...35V
на замовлення 474 шт:
термін постачання 14-30 дні (днів)
9+55.78 грн
11+40.18 грн
Мінімальне замовлення: 9
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IX4427MTR IX4427MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 222 шт:
термін постачання 14-30 дні (днів)
5+94.47 грн
10+73.52 грн
25+57.65 грн
50+46.78 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IX4340N IX4340N IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 823 шт:
термін постачання 14-30 дні (днів)
5+102.57 грн
10+58.98 грн
50+48.96 грн
100+44.95 грн
300+40.02 грн
Мінімальне замовлення: 5
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IX4340NE IX4340NE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 909 шт:
термін постачання 14-30 дні (днів)
6+87.27 грн
10+56.06 грн
25+48.62 грн
100+39.77 грн
300+39.68 грн
Мінімальне замовлення: 6
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IX4340UE IX4340UE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 1775 шт:
термін постачання 14-30 дні (днів)
4+120.56 грн
10+55.72 грн
25+48.46 грн
80+41.77 грн
240+41.27 грн
Мінімальне замовлення: 4
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IX4428MTR IX4428MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
5+89.97 грн
Мінімальне замовлення: 5
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DSA60C45HB DSA60C45HB IXYS DSA60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
2+272.61 грн
3+228.08 грн
10+201.34 грн
30+184.63 грн
Мінімальне замовлення: 2
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DSA60C45PB DSA60C45PB IXYS DSA60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
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DSA60C100PB DSA60C100PB IXYS DSA60C100PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
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DSA60C60HB DSA60C60HB IXYS DSA60C60HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
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DSA60C60PB DSA60C60PB IXYS DSA60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
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IXTT26N60P IXTT26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXFT26N60P IXFT26N60P IXYS IXFH26N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N60P IXTQ26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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DSS16-01A DSS16-01A IXYS DSS16-01A_AR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
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MCO150-12IO1 MCO150-12IO1 IXYS littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+2865.56 грн
В кошику  од. на суму  грн.
IXYH40N65C3 IXYH40N65C3 IXYS IXYH40N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+1300.97 грн
10+885.57 грн
В кошику  од. на суму  грн.
IXFR80N60P3 IXFR80N60P3 IXYS IXFR80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3 IXYS IXFN80N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFX80N60P3 IXFX80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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MCD224-20io1 MCD224-20io1 IXYS MCD224-20IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.72V
Max. forward voltage: 1.03V
Load current: 250A
Max. load current: 390A
Max. off-state voltage: 2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD224-22io1 MCD224-22io1 IXYS MCD224-22io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.72V
Max. forward voltage: 1.03V
Load current: 250A
Max. load current: 390A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-14io1 MCD225-14io1 IXYS MCD225-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-16io1 MCD225-16io1 IXYS MCD225-16io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-12io1 MCD225-12io1 IXYS MCD225-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-18io1 MCD225-18io1 IXYS MCD225-18io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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CLA80E1200HF CLA80E1200HF IXYS CLA80E1200HF.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
1+540.72 грн
5+456.15 грн
В кошику  од. на суму  грн.
IXFH10N100P IXFH10N100P IXYS IXFH10N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 326 шт:
термін постачання 14-30 дні (днів)
1+583.91 грн
5+422.73 грн
10+372.61 грн
В кошику  од. на суму  грн.
IXTP34N65X2 IXTP34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXTA4N70X2 IXTA4N70X2 IXYS ixty2n65x2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
3+152.05 грн
10+133.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTU4N70X2 IXTU4N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
3+167.35 грн
5+140.35 грн
25+123.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP4N70X2M IXTP4N70X2M IXYS IXTP4N70X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 30W; TO220FP; 186ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 186ns
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IXFH220N06T3 IXFH220N06T3 IXYS IXxx220N06T3-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 IXFA220N06T3 IXYS IXxx220N06T3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFK420N10T IXFK420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+1295.58 грн
5+1029.26 грн
В кошику  од. на суму  грн.
IXFX420N10T IXFX420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
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IXFK520N075T2 IXFK520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 545nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
1+915.00 грн
В кошику  од. на суму  грн.
IXFN520N075T2 IXFN520N075T2 IXYS IXFN520N075T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Semiconductor structure: single transistor
Mechanical mounting: screw
Polarisation: unipolar
Reverse recovery time: 150ns
Gate charge: 545nC
Type of semiconductor module: MOSFET transistor
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 75V
Drain current: 480A
Power dissipation: 940W
Electrical mounting: screw
Pulsed drain current: 1.5kA
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IXTA120N075T2 IXTA120N075T2 IXYS IXTA(P)120N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Mounting: SMD
Case: TO263
On-state resistance: 7.7mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 50ns
Gate charge: 78nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
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IXDI609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDI609SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDD609SIA IXDD609CI.pdf
IXDD609SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 971 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+122.36 грн
10+83.54 грн
25+76.03 грн
Мінімальне замовлення: 4
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IXDD609SIATR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDD609SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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CPC1010N CPC1010N.pdf
CPC1010N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
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CPC1010NTR CPC1010N.pdf
CPC1010NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.250VAC
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 11.5Ω
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Case: SOP4
Manufacturer series: OptoMOS
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IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+210.53 грн
50+177.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP12N50P IXTA12N50P-DTE.pdf
IXTP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 282 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+224.93 грн
3+187.14 грн
10+165.42 грн
50+149.54 грн
250+147.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH52N50P2 IXFH(T)52N50P2.pdf
IXFH52N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+818.73 грн
3+688.40 грн
10+635.77 грн
30+593.16 грн
120+561.42 грн
В кошику  од. на суму  грн.
IXTB62N50L IXTB62N50L.pdf
IXTB62N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 800W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Drain-source voltage: 500V
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+3368.50 грн
3+2766.98 грн
10+2486.27 грн
В кошику  од. на суму  грн.
IXTN62N50L IXTN62N50L.pdf
IXTN62N50L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Power dissipation: 800W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Gate charge: 550nC
On-state resistance: 0.1Ω
Drain current: 62A
Pulsed drain current: 150A
Gate-source voltage: ±40V
Drain-source voltage: 500V
Kind of channel: enhancement
Technology: Linear™
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IXTP02N50D IXTP02N50D.pdf
IXTP02N50D
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.2A; 25W; TO220AB; 5ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 5ns
Gate charge: 0.12µC
On-state resistance: 30Ω
Drain current: 0.2A
Drain-source voltage: 500V
Kind of channel: depletion
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IXFH42N50P2 IXFH(T)42N50P2.pdf
IXFH42N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 830W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 92nC
On-state resistance: 0.145Ω
Drain current: 42A
Drain-source voltage: 500V
Kind of channel: enhancement
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IXFP12N50P IXF_12N50P.pdf
IXFP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
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IXFT52N50P2 IXFH(T)52N50P2.pdf
IXFT52N50P2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 52A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 960W
Case: TO268
Mounting: SMD
Kind of package: tube
Gate charge: 113nC
On-state resistance: 0.12Ω
Drain current: 52A
Drain-source voltage: 500V
Kind of channel: enhancement
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CLA50E1200HB CLA50E1200HB.pdf
CLA50E1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50mA
Load current: 50A
Case: TO247AD
Max. load current: 79A
Max. forward impulse current: 0.65kA
Max. off-state voltage: 1.2kV
Mounting: THT
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+322.48 грн
5+284.89 грн
10+271.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA50E1200TC-TUB CLA50E1200TC.pdf
CLA50E1200TC-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50/80mA
Load current: 50A
Case: D3PAK
Max. load current: 79A
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
Mounting: SMD
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+611.80 грн
10+487.90 грн
30+428.58 грн
В кошику  од. на суму  грн.
CLA50E1200TC-TRL Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Kind of package: reel; tape
Gate current: 50/80mA
Load current: 50A
Case: D3PAK
Max. load current: 79A
Max. forward impulse current: 555A
Max. off-state voltage: 1.2kV
Mounting: SMD
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PD2401 PD2401.pdf
PD2401
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Case: DIP4
Mounting: THT
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Max. operating current: 1A
Control current max.: 100mA
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Type of relay: solid state
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+454.35 грн
25+403.52 грн
В кошику  од. на суму  грн.
IX4427N IX4426-27-28.pdf
IX4427N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1128 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+68.38 грн
10+47.70 грн
25+40.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IX4428N IX4426-27-28.pdf
IX4428N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Supply voltage: 4.5...35V
на замовлення 474 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+55.78 грн
11+40.18 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IX4427MTR IX4426-27-28.pdf
IX4427MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 222 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+94.47 грн
10+73.52 грн
25+57.65 грн
50+46.78 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IX4340N IX4340.pdf
IX4340N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 823 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+102.57 грн
10+58.98 грн
50+48.96 грн
100+44.95 грн
300+40.02 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IX4340NE IX4340.pdf
IX4340NE
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 909 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+87.27 грн
10+56.06 грн
25+48.62 грн
100+39.77 грн
300+39.68 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4340UE IX4340.pdf
IX4340UE
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Output current: -5...5A
на замовлення 1775 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+120.56 грн
10+55.72 грн
25+48.46 грн
80+41.77 грн
240+41.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IX4428MTR IX4426-27-28.pdf
IX4428MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+89.97 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DSA60C45HB DSA60C45HB.pdf
DSA60C45HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+272.61 грн
3+228.08 грн
10+201.34 грн
30+184.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSA60C45PB DSA60C45PB.pdf
DSA60C45PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
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DSA60C100PB DSA60C100PB.pdf
DSA60C100PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
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DSA60C60HB DSA60C60HB.pdf
DSA60C60HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
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DSA60C60PB DSA60C60PB.pdf
DSA60C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
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IXTT26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTT26N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXFT26N60P IXFH26N60P.pdf
IXFT26N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTQ26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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DSS16-01A DSS16-01A_AR.pdf
DSS16-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Power dissipation: 105W
Max. load current: 35A
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MCO150-12IO1 littelfuse-power-semiconductors-mco150-12io1-datasheet?assetguid=f9ee00e6-1e95-47df-b091-c9d6d91a784d
MCO150-12IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 158A; SOT227B; screw
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single thyristor
Case: SOT227B
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.89V
Load current: 158A
Max. off-state voltage: 1.2kV
Kind of package: bulk
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2865.56 грн
В кошику  од. на суму  грн.
IXYH40N65C3 IXYH40N65C3.pdf
IXYH40N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1300.97 грн
10+885.57 грн
В кошику  од. на суму  грн.
IXFR80N60P3 IXFR80N60P3.pdf
IXFR80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3.pdf
IXFN80N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFX80N60P3 IXFK(X)80N60P3.pdf
IXFX80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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MCD224-20io1 MCD224-20IO1.pdf
MCD224-20io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.72V
Max. forward voltage: 1.03V
Load current: 250A
Max. load current: 390A
Max. off-state voltage: 2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD224-22io1 MCD224-22io1.pdf
MCD224-22io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.72V
Max. forward voltage: 1.03V
Load current: 250A
Max. load current: 390A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-14io1 MCD225-14io1.pdf
MCD225-14io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-16io1 MCD225-16io1.pdf
MCD225-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-12io1 MCD225-12io1.pdf
MCD225-12io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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MCD225-18io1 MCD225-18io1.pdf
MCD225-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Gate current: 150/220mA
Threshold on-voltage: 0.79V
Max. forward voltage: 1.18V
Load current: 220A
Max. load current: 400A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 8kA
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
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CLA80E1200HF CLA80E1200HF.pdf
CLA80E1200HF
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+540.72 грн
5+456.15 грн
В кошику  од. на суму  грн.
IXFH10N100P IXFH10N100P.pdf
IXFH10N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
на замовлення 326 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+583.91 грн
5+422.73 грн
10+372.61 грн
В кошику  од. на суму  грн.
IXTP34N65X2 IXT_34N65X2.pdf
IXTP34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXTA4N70X2 ixty2n65x2.pdf
IXTA4N70X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+152.05 грн
10+133.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTU4N70X2 ixty2n65x2.pdf
IXTU4N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 68 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+167.35 грн
5+140.35 грн
25+123.65 грн
Мінімальне замовлення: 3
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IXTP4N70X2M IXTP4N70X2M.pdf
IXTP4N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 30W; TO220FP; 186ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 186ns
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IXFH220N06T3 IXxx220N06T3-DTE.pdf
IXFH220N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 IXxx220N06T3-DTE.pdf
IXFA220N06T3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFK420N10T IXFK420N10T_IXFX420N10T.pdf
IXFK420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1295.58 грн
5+1029.26 грн
В кошику  од. на суму  грн.
IXFX420N10T IXFK420N10T_IXFX420N10T.pdf
IXFX420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
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IXFK520N075T2 IXFK(X)520N075T2.pdf
IXFK520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Mounting: THT
Case: TO264
On-state resistance: 2.2mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 545nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 520A
Power dissipation: 1.25kW
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+915.00 грн
В кошику  од. на суму  грн.
IXFN520N075T2 IXFN520N075T2.pdf
IXFN520N075T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Semiconductor structure: single transistor
Mechanical mounting: screw
Polarisation: unipolar
Reverse recovery time: 150ns
Gate charge: 545nC
Type of semiconductor module: MOSFET transistor
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 75V
Drain current: 480A
Power dissipation: 940W
Electrical mounting: screw
Pulsed drain current: 1.5kA
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IXTA120N075T2 IXTA(P)120N075T2.pdf
IXTA120N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Mounting: SMD
Case: TO263
On-state resistance: 7.7mΩ
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 50ns
Gate charge: 78nC
Kind of channel: enhancement
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
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