Продукція > IXYS > Всі товари виробника IXYS (15207) > Сторінка 239 з 254

Обрати Сторінку:   [  << Попередня Сторінка ]  1 25 50 75 100 125 150 175 200 225 234 235 236 237 238 239 240 241 242 243 244 250 254  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IXYH40N120B4H1 IXYS PdfFile_145990.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 240A
товару немає в наявності
В кошику  од. на суму  грн.
IXYH40N120C3D1 IXYH40N120C3D1 IXYS IXYH40N120C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
товару немає в наявності
В кошику  од. на суму  грн.
IXYH40N120C4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 230A
товару немає в наявності
В кошику  од. на суму  грн.
IXYH40N120C4H1 IXYS ixyh40n120c4h1-datasheet?assetguid=69e21d3b-5d3d-47d2-a572-40f1948d7b05 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 230A
товару немає в наявності
В кошику  од. на суму  грн.
IXYT40N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Collector current: 140A
Pulsed collector current: 275A
товару немає в наявності
В кошику  од. на суму  грн.
IXYT40N120A4HV-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Collector current: 140A
товару немає в наявності
В кошику  од. на суму  грн.
DSEI60-12A DSEI60-12A IXYS DSEI60-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
1+493.19 грн
5+422.41 грн
10+419.02 грн
В кошику  од. на суму  грн.
IXFK48N50 IXFK48N50 IXYS IXFK48N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTA200N055T2 IXTA200N055T2 IXYS IXTA(P)200N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTH10N100D2 IXTH10N100D2 IXYS IXTH(T)10N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT10N100D IXTT10N100D IXYS IXTH(T)10N100D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT10N100D2 IXTT10N100D2 IXYS IXTH(T)10N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
DMA50P1200HB DMA50P1200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
1+464.02 грн
3+387.70 грн
10+342.84 грн
30+314.06 грн
В кошику  од. на суму  грн.
DMA50P1200HR DMA50P1200HR IXYS DMA50P1200HR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Max. forward impulse current: 555A
Kind of package: tube
Power dissipation: 210W
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
1+836.87 грн
3+700.07 грн
10+618.80 грн
30+567.16 грн
В кошику  од. на суму  грн.
MCMA50P1200TA MCMA50P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
1+1766.73 грн
В кошику  од. на суму  грн.
IXTH50P10 IXTH50P10 IXYS IXT_50P10.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
1+637.23 грн
5+546.85 грн
В кошику  од. на суму  грн.
IXTT50P10 IXTT50P10 IXYS IXT_50P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
1+686.46 грн
3+563.78 грн
10+506.21 грн
В кошику  од. на суму  грн.
CMA50P1600FC CMA50P1600FC IXYS CMA50P1600FC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
DMA50P1600HB DMA50P1600HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Case: TO247-3
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MDMA50P1600TG IXYS MDMA50P1600TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MCMA50P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MDMA50P1200TG IXYS MDMA50P1200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Reverse recovery time: 400ns
на замовлення 147 шт:
термін постачання 14-30 дні (днів)
1+538.77 грн
3+450.34 грн
10+397.86 грн
30+357.23 грн
В кошику  од. на суму  грн.
IXTY2N65X2 IXTY2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 4.3nC
Reverse recovery time: 137ns
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C45HB DSA60C45HB IXYS DSA60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
2+276.22 грн
3+231.10 грн
10+204.01 грн
30+187.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSA60C150PB DSA60C150PB IXYS DSA60C150PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.8V
Load current: 30A x2
Power dissipation: 175W
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C45PB DSA60C45PB IXYS DSA60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C60PB DSA60C60PB IXYS DSA60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C100PB DSA60C100PB IXYS DSA60C100PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C60HB DSA60C60HB IXYS DSA60C60HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
товару немає в наявності
В кошику  од. на суму  грн.
FDA217S FDA217S IXYS FDA217.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: driver
Operating temperature: -40...85°C
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
2+278.96 грн
3+237.02 грн
5+223.48 грн
10+204.01 грн
20+187.08 грн
50+180.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IX4426N IX4426N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
товару немає в наявності
В кошику  од. на суму  грн.
IX4340N IX4340N IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 801 шт:
термін постачання 14-30 дні (днів)
5+103.93 грн
10+59.76 грн
50+49.61 грн
100+45.54 грн
300+40.21 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC1002NTR CPC1002NTR IXYS CPC1002N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 700mA
Manufacturer series: OptoMOS
On-state resistance: 0.55Ω
Relay variant: current source
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
товару немає в наявності
В кошику  од. на суму  грн.
IXFK102N30P IXFK102N30P IXYS IXFK102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Polarisation: unipolar
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+1180.56 грн
В кошику  од. на суму  грн.
FDA217 FDA217 IXYS FDA217.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
2+288.07 грн
10+203.16 грн
50+182.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDF602PI IXDF602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
5+91.16 грн
10+61.80 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXDN602PI IXDN602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 1147 шт:
термін постачання 14-30 дні (днів)
5+91.16 грн
10+62.64 грн
25+57.56 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXDN604PI IXDN604PI IXYS IXDD604PI.pdf IXD_604.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 1065 шт:
термін постачання 14-30 дні (днів)
4+126.72 грн
10+87.19 грн
50+80.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD614PI IXDD614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 931 шт:
термін постачання 14-30 дні (днів)
3+176.86 грн
10+123.59 грн
25+116.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN609PI IXDN609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 615 шт:
термін постачання 14-30 дні (днів)
4+123.07 грн
10+84.65 грн
50+77.88 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDI614PI IXDI614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
3+176.86 грн
10+123.59 грн
25+121.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDI604PI IXDI604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 909 шт:
термін постачання 14-30 дні (днів)
4+126.72 грн
10+87.19 грн
50+80.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDF604PI IXDF604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 361 шт:
термін постачання 14-30 дні (днів)
4+129.45 грн
10+110.89 грн
50+96.50 грн
100+89.73 грн
250+80.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604PI IXDD604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: non-inverting
на замовлення 139 шт:
термін постачання 14-30 дні (днів)
4+132.19 грн
10+89.73 грн
50+81.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IX2127G IX2127G IXYS IX2127.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
9+51.05 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IXDI602PI IXDI602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting
на замовлення 972 шт:
термін постачання 14-30 дні (днів)
3+159.53 грн
10+93.12 грн
25+79.57 грн
50+70.26 грн
100+63.49 грн
250+55.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
2+259.81 грн
10+154.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXH100N60B3 IXXH100N60B3 IXYS IXXH100N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
товару немає в наявності
В кошику  од. на суму  грн.
IXXH100N60C3 IXXH100N60C3 IXYS IXXH100N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
товару немає в наявності
В кошику  од. на суму  грн.
IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC2317N CPC2317N IXYS CPC2317N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.35x3.81x2.18mm
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
CPC1018NTR CPC1018NTR IXYS CPC1018N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Kind of output: MOSFET
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 3ms
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
IXFL44N100P IXFL44N100P IXYS IXFL44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
1+1008.26 грн
В кошику  од. на суму  грн.
DSS25-0045A DSS25-0045A IXYS DSS25-0045A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.59V
Power dissipation: 135W
Max. off-state voltage: 45V
Load current: 25A
Max. forward impulse current: 0.4kA
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
DSS25-0025B DSS25-0025B IXYS DSS25-0025B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.44V
Power dissipation: 90W
Max. off-state voltage: 25V
Load current: 25A
Max. forward impulse current: 330A
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
IXYH30N120C4 IXYS littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 57nC
Power dissipation: 500W
Gate-emitter voltage: ±20V
Collector current: 94A
Pulsed collector current: 166A
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
IXYH30N120C4H1 IXYS ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 57nC
Power dissipation: 500W
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 166A
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
IXDN75N120 IXDN75N120 IXYS IXDN75N120.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 150A
Gate-emitter voltage: ±20V
Power dissipation: 660W
Pulsed collector current: 190A
Max. off-state voltage: 1.2kV
Technology: NPT
Type of semiconductor module: IGBT
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXYN85N120C4H1 IXYS IXYN85N120C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 600W
Pulsed collector current: 420A
Max. off-state voltage: 1.2kV
Technology: GenX4™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXYH40N120B4H1 PdfFile_145990.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 240A
товару немає в наявності
В кошику  од. на суму  грн.
IXYH40N120C3D1 IXYH40N120C3D1.pdf
IXYH40N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
товару немає в наявності
В кошику  од. на суму  грн.
IXYH40N120C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 230A
товару немає в наявності
В кошику  од. на суму  грн.
IXYH40N120C4H1 ixyh40n120c4h1-datasheet?assetguid=69e21d3b-5d3d-47d2-a572-40f1948d7b05
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 680W; TO247-3
Type of transistor: IGBT
Power dissipation: 680W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-off time: 140ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 230A
товару немає в наявності
В кошику  од. на суму  грн.
IXYT40N120A4HV littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Collector current: 140A
Pulsed collector current: 275A
товару немає в наявності
В кошику  од. на суму  грн.
IXYT40N120A4HV-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Collector current: 140A
товару немає в наявності
В кошику  од. на суму  грн.
DSEI60-12A DSEI60-12A.pdf
DSEI60-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+493.19 грн
5+422.41 грн
10+419.02 грн
В кошику  од. на суму  грн.
IXFK48N50 IXFK48N50.pdf
IXFK48N50
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTA200N055T2 IXTA(P)200N055T2.pdf
IXTA200N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTH10N100D2 IXTH(T)10N100D2.pdf
IXTH10N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT10N100D IXTH(T)10N100D.pdf
IXTT10N100D
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT10N100D2 IXTH(T)10N100D2.pdf
IXTT10N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
DMA50P1200HB
DMA50P1200HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: tube
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+464.02 грн
3+387.70 грн
10+342.84 грн
30+314.06 грн
В кошику  од. на суму  грн.
DMA50P1200HR DMA50P1200HR.pdf
DMA50P1200HR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Case: ISO247™
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Max. forward voltage: 1.28V
Max. forward impulse current: 555A
Kind of package: tube
Power dissipation: 210W
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+836.87 грн
3+700.07 грн
10+618.80 грн
30+567.16 грн
В кошику  од. на суму  грн.
MCMA50P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA50P1200TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1766.73 грн
В кошику  од. на суму  грн.
IXTH50P10 IXT_50P10.pdf
IXTH50P10
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+637.23 грн
5+546.85 грн
В кошику  од. на суму  грн.
IXTT50P10 IXT_50P10.pdf
IXTT50P10
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+686.46 грн
3+563.78 грн
10+506.21 грн
В кошику  од. на суму  грн.
CMA50P1600FC CMA50P1600FC.pdf
CMA50P1600FC
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
DMA50P1600HB
DMA50P1600HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Case: TO247-3
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MDMA50P1600TG MDMA50P1600TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MCMA50P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MDMA50P1200TG MDMA50P1200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Reverse recovery time: 400ns
на замовлення 147 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+538.77 грн
3+450.34 грн
10+397.86 грн
30+357.23 грн
В кошику  од. на суму  грн.
IXTY2N65X2 IXTP(Y)2N65X2.pdf
IXTY2N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 4.3nC
Reverse recovery time: 137ns
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C45HB DSA60C45HB.pdf
DSA60C45HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+276.22 грн
3+231.10 грн
10+204.01 грн
30+187.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSA60C150PB DSA60C150PB.pdf
DSA60C150PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.8V
Load current: 30A x2
Power dissipation: 175W
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C45PB DSA60C45PB.pdf
DSA60C45PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C60PB DSA60C60PB.pdf
DSA60C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C100PB DSA60C100PB.pdf
DSA60C100PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
товару немає в наявності
В кошику  од. на суму  грн.
DSA60C60HB DSA60C60HB.pdf
DSA60C60HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
товару немає в наявності
В кошику  од. на суму  грн.
FDA217S FDA217.pdf
FDA217S
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: driver
Operating temperature: -40...85°C
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+278.96 грн
3+237.02 грн
5+223.48 грн
10+204.01 грн
20+187.08 грн
50+180.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IX4426N IX4426-27-28.pdf
IX4426N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
товару немає в наявності
В кошику  од. на суму  грн.
IX4340N IX4340.pdf
IX4340N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 801 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+103.93 грн
10+59.76 грн
50+49.61 грн
100+45.54 грн
300+40.21 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CPC1002NTR CPC1002N.pdf
CPC1002NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 5ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 700mA
Manufacturer series: OptoMOS
On-state resistance: 0.55Ω
Relay variant: current source
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
товару немає в наявності
В кошику  од. на суму  грн.
IXFK102N30P IXFK102N30P.pdf
IXFK102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Polarisation: unipolar
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1180.56 грн
В кошику  од. на суму  грн.
FDA217 FDA217.pdf
FDA217
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+288.07 грн
10+203.16 грн
50+182.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDF602PI IXD_602.pdf
IXDF602PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+91.16 грн
10+61.80 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXDN602PI IXD_602.pdf
IXDN602PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
на замовлення 1147 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+91.16 грн
10+62.64 грн
25+57.56 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXDN604PI IXDD604PI.pdf IXD_604.pdf
IXDN604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 1065 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+126.72 грн
10+87.19 грн
50+80.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD614PI IXDD614CI-DTE.pdf
IXDD614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 931 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+176.86 грн
10+123.59 грн
25+116.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN609PI IXDD609CI.pdf
IXDN609PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 615 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+123.07 грн
10+84.65 грн
50+77.88 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDI614PI IXDD614CI-DTE.pdf
IXDI614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+176.86 грн
10+123.59 грн
25+121.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDI604PI IXDD604PI.pdf
IXDI604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 909 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+126.72 грн
10+87.19 грн
50+80.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDF604PI IXDD604PI.pdf
IXDF604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 361 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+129.45 грн
10+110.89 грн
50+96.50 грн
100+89.73 грн
250+80.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604PI IXDD604PI.pdf
IXDD604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: non-inverting
на замовлення 139 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+132.19 грн
10+89.73 грн
50+81.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IX2127G IX2127.pdf
IX2127G
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+51.05 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IXDI602PI IXD_602.pdf
IXDI602PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting
на замовлення 972 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+159.53 грн
10+93.12 грн
25+79.57 грн
50+70.26 грн
100+63.49 грн
250+55.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+259.81 грн
10+154.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXH100N60B3 IXXH100N60B3.pdf
IXXH100N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
товару немає в наявності
В кошику  од. на суму  грн.
IXXH100N60C3 IXXH100N60C3.pdf
IXXH100N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
товару немає в наявності
В кошику  од. на суму  грн.
IXKC19N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC2317N CPC2317N.pdf
CPC2317N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.35x3.81x2.18mm
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
CPC1018NTR CPC1018N.pdf
CPC1018NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Kind of output: MOSFET
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 3ms
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
IXFL44N100P IXFL44N100P.pdf
IXFL44N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1008.26 грн
В кошику  од. на суму  грн.
DSS25-0045A DSS25-0045A.pdf
DSS25-0045A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.59V
Power dissipation: 135W
Max. off-state voltage: 45V
Load current: 25A
Max. forward impulse current: 0.4kA
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
DSS25-0025B DSS25-0025B.pdf
DSS25-0025B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.44V
Power dissipation: 90W
Max. off-state voltage: 25V
Load current: 25A
Max. forward impulse current: 330A
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
IXYH30N120C4 littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 57nC
Power dissipation: 500W
Gate-emitter voltage: ±20V
Collector current: 94A
Pulsed collector current: 166A
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
IXYH30N120C4H1 ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 57nC
Power dissipation: 500W
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 166A
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
IXDN75N120 IXDN75N120.pdf
IXDN75N120
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 150A
Gate-emitter voltage: ±20V
Power dissipation: 660W
Pulsed collector current: 190A
Max. off-state voltage: 1.2kV
Technology: NPT
Type of semiconductor module: IGBT
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXYN85N120C4H1 IXYN85N120C4H1.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 600W
Pulsed collector current: 420A
Max. off-state voltage: 1.2kV
Technology: GenX4™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 25 50 75 100 125 150 175 200 225 234 235 236 237 238 239 240 241 242 243 244 250 254  [ Наступна Сторінка >> ]