| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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CPC1968J | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ Type of relay: solid state Control current: 10mA Max. operating current: 5A Switched voltage: max. 500V DC Relay variant: Photo MOSFET On-state resistance: 0.35Ω Mounting: THT Operate time: 4.6ms Release time: 0.07ms Operating temperature: -40...85°C Body dimensions: 26.2x20x5mm Control current max.: 100mA Control voltage: 0.9...1.56V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1563G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC Type of relay: solid state Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Operating temperature: -40...85°C Turn-off time: 2ms On-state resistance: 35Ω Manufacturer series: OptoMOS Contacts configuration: SPST-NO Turn-on time: 2ms |
на замовлення 336 шт: термін постачання 14-30 дні (днів) |
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CPC1916Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 21.08x10.16x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 5ms Switched voltage: max. 100V AC; max. 100V DC Case: SIP4 Max. operating current: 2.5A Turn-off time: 3ms Control current max.: 50mA On-state resistance: 0.34Ω |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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CPC1231N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NC Switched voltage: max. 350V AC; max. 350V DC Max. operating current: 120mA Control current max.: 50mA On-state resistance: 30Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
на замовлення 214 шт: термін постачання 14-30 дні (днів) |
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CPC1393G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 90mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP4 Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Control current max.: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1966B | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase Type of relay: solid state Mounting: SMT Relay variant: 1-phase Body dimensions: 21.08x16.76x3.3mm Operating temperature: -40...85°C Insulation voltage: 5kV Turn-on time: 20µs Switching method: zero voltage switching Switched voltage: max. 800V AC Case: SO8 Max. operating current: 3A Control current max.: 50mA |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
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| MDMA425P1600PTSF | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 10kA Load current: 425A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CPC1230N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 2ms Turn-off time: 1ms Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Max. operating current: 120mA Control current max.: 50mA On-state resistance: 30Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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CPC1231NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 2ms Turn-off time: 2ms Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NC Switched voltage: max. 350V AC; max. 350V DC Max. operating current: 120mA Control current max.: 50mA On-state resistance: 30Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CPC1230NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 2ms Turn-off time: 1ms Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Max. operating current: 120mA Control current max.: 50mA On-state resistance: 30Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXGR72N60B3H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXGR32N90B2D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™ Type of transistor: IGBT Collector-emitter voltage: 900V Collector current: 22A Power dissipation: 160W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 89nC Kind of package: tube Technology: HiPerFAST™; PT Turn-on time: 42ns Turn-off time: 690ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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LDA111 | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V Kind of output: Darlington Case: DIP6 Mounting: THT Type of optocoupler: optocoupler Turn-on time: 8µs Turn-off time: 345µs Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 300-30000%@1mA Insulation voltage: 3.75kV |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||
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LDA111STR | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A Kind of output: Darlington Mounting: SMD Type of optocoupler: optocoupler Turn-off time: 345µs Turn-on time: 8µs Number of channels: 1 Trigger current: 1A Collector-emitter voltage: 30V CTR@If: 300-30000%@1mA Insulation voltage: 3.75kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| LDA111S | IXYS |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A Kind of output: Darlington Mounting: SMD Type of optocoupler: optocoupler Turn-off time: 345µs Turn-on time: 8µs Number of channels: 1 Trigger current: 1A CTR@If: 300-30000%@1mA Insulation voltage: 3.75kV |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | |||||||||||||
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LDA110STR | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A Kind of output: Darlington Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 8µs Turn-off time: 345µs Number of channels: 1 Trigger current: 1A CTR@If: 300-30000%@1mA Insulation voltage: 3.75kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTK210P10T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 1.04kW Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -210A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±15V On-state resistance: 7.5mΩ Reverse recovery time: 200ns |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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CPC1017NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 60V DC; max. 600V AC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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DSSK16-01A | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.65V Max. forward impulse current: 120A Kind of package: tube Heatsink thickness: 1.14...1.39mm Power dissipation: 90W |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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DSSK16-01AS | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Max. forward impulse current: 120A Kind of package: reel; tape Power dissipation: 90W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| CLA120E1200HB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; 70mA; TO247-3; THT; tube Type of thyristor: thyristor Mounting: THT Gate current: 70mA Max. off-state voltage: 1.2kV Kind of package: tube Case: TO247-3 |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
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IXFP8N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB Drain-source voltage: 650V Drain current: 8A Case: TO220AB Polarisation: unipolar On-state resistance: 0.45Ω Power dissipation: 150W Technology: HiPerFET™; X2-Class Gate-source voltage: ±30V Kind of package: tube Gate charge: 11nC Kind of channel: enhancement Type of transistor: N-MOSFET Reverse recovery time: 105ns Mounting: THT |
на замовлення 195 шт: термін постачання 14-30 дні (днів) |
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IXFY8N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Drain-source voltage: 650V Drain current: 8A Case: TO252 Polarisation: unipolar On-state resistance: 0.45Ω Power dissipation: 150W Technology: HiPerFET™; X2-Class Gate-source voltage: ±30V Kind of package: tube Gate charge: 11nC Kind of channel: enhancement Type of transistor: N-MOSFET Reverse recovery time: 105ns Mounting: SMD |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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IXTY8N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Drain-source voltage: 650V Drain current: 8A Case: TO252 Polarisation: unipolar On-state resistance: 0.5Ω Power dissipation: 150W Technology: X2-Class Gate-source voltage: ±30V Kind of package: tube Gate charge: 12nC Kind of channel: enhancement Type of transistor: N-MOSFET Reverse recovery time: 200ns Mounting: SMD |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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IXFA8N65X2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Drain-source voltage: 650V Drain current: 8A Case: TO263 Polarisation: unipolar On-state resistance: 0.45Ω Power dissipation: 150W Technology: HiPerFET™; X2-Class Gate-source voltage: ±30V Kind of package: tube Gate charge: 11nC Kind of channel: enhancement Type of transistor: N-MOSFET Reverse recovery time: 105ns Mounting: SMD |
на замовлення 420 шт: термін постачання 14-30 дні (днів) |
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IXTH48N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Technology: X2-Class |
на замовлення 158 шт: термін постачання 14-30 дні (днів) |
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IXTQ48N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF Drain-source voltage: 650V Drain current: 48A Case: TO3PF Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 70A Power dissipation: 70W Gate-source voltage: ±30V Kind of package: tube Gate charge: 76nC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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| DK208DRP | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 8A; 4us; DPAK,SC63; Ifsm: 180A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 4µs Semiconductor structure: single diode Case: DPAK; SC63 Max. forward impulse current: 180A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
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IXTP160N04T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 250W Case: TO220AB On-state resistance: 5mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA160N04T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 250W Case: TO263 On-state resistance: 5mΩ Mounting: SMD Gate charge: 79nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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CPC9909N | IXYS |
Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA Type of integrated circuit: driver Operating temperature: -55...85°C Integrated circuit features: linear dimming; PWM Kind of package: tube Case: SO8 Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Mounting: SMD Input voltage: 8...550V Output current: 2mA |
на замовлення 685 шт: термін постачання 14-30 дні (днів) |
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CPC9909NE | IXYS |
Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP Type of integrated circuit: driver Operating temperature: -55...85°C Integrated circuit features: linear dimming; PWM Kind of package: tube Case: SO8-EP Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Mounting: SMD Input voltage: 8...550V |
на замовлення 1016 шт: термін постачання 14-30 дні (днів) |
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CPC9909NETR | IXYS |
Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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CPC9909NTR | IXYS |
Category: LED driversDescription: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -55...85°C Input voltage: 8...550V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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MXHV9910B | IXYS |
Category: LED driversDescription: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8 Mounting: SMD Output voltage: 12V Kind of package: tube Case: SO8 Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Frequency: 64kHz Topology: buck Input voltage: 8...450V Output current: 0.28A Type of integrated circuit: driver Operating temperature: -40...85°C Integrated circuit features: linear dimming; PWM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MXHV9910BE | IXYS |
Category: LED driversDescription: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V Mounting: SMD Output voltage: 12V Kind of package: tube Case: SO8-EP Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Frequency: 64kHz Topology: buck Input voltage: 8...450V Output current: 0.28A Type of integrated circuit: driver Operating temperature: -40...85°C Integrated circuit features: linear dimming; PWM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MXHV9910BETR | IXYS |
Category: LED driversDescription: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V Mounting: SMD Output voltage: 12V Kind of package: reel; tape Case: SO8-EP Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Frequency: 64kHz Topology: buck Input voltage: 8...450V Output current: 0.28A Type of integrated circuit: driver Operating temperature: -40...85°C Integrated circuit features: linear dimming; PWM |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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MXHV9910BTR | IXYS |
Category: LED driversDescription: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8 Mounting: SMD Output voltage: 12V Kind of package: reel; tape Case: SO8 Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Frequency: 64kHz Topology: buck Input voltage: 8...450V Output current: 0.28A Type of integrated circuit: driver Operating temperature: -40...85°C Integrated circuit features: linear dimming; PWM |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXFP60N25X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO220AB On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50nC Features of semiconductor devices: ultra junction x-class Reverse recovery time: 95ns |
на замовлення 245 шт: термін постачання 14-30 дні (днів) |
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IXFP60N25X3M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 36W Case: TO220FP On-state resistance: 23mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 95ns Features of semiconductor devices: ultra junction x-class |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
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CPC1965G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x7.62x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 260V AC Case: DIP4 Max. operating current: 1A Control current max.: 100mA |
на замовлення 309 шт: термін постачання 14-30 дні (днів) |
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IXTA76P10T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 25mΩ Mounting: SMD Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 70ns |
на замовлення 137 шт: термін постачання 14-30 дні (днів) |
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IXTA76N25T | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO263 On-state resistance: 44mΩ Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 148ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA76P10T-TRL | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: P Drain-source voltage: 100V Drain current: 76A Power dissipation: 298W Case: D2PAK; TO263 Gate-source voltage: 15V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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IXFN56N90P | IXYS |
Category: Transistor modulesDescription: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A Polarisation: unipolar Drain-source voltage: 900V Drain current: 56A Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.145Ω Gate charge: 375nC Kind of channel: enhancement Power dissipation: 1kW Technology: HiPerFET™; Polar™ Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 300ns Pulsed drain current: 168A Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
| IXBT14N300HV | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 3kV; 38A; 200W; TO268HV Mounting: SMD Collector-emitter voltage: 3kV Power dissipation: 200W Gate charge: 62nC Pulsed collector current: 120A Type of transistor: IGBT Kind of package: tube Case: TO268HV Gate-emitter voltage: ±20V Collector current: 38A |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | |||||||||||||
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MCC132-12io1 | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 Max. forward impulse current: 5.08kA |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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MCC132-08io1 | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| MCC132-16io1 | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V Gate current: 150/200mA Max. forward voltage: 1.14V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-14io1 | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 Max. forward impulse current: 4.04kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-18io1 | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-18IO1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-14IO1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC132-16IO1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V Gate current: 150/200mA Max. forward voltage: 1.36V Type of semiconductor module: thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 130A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CMA80MT1600NHR | IXYS |
Category: TriacsDescription: Triac; 1.6kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 325A Gate current: 70/90mA Max. off-state voltage: 1.6kV Max. load current: 40A Kind of package: tube Case: ISO247™ Typ of triac: standard Mounting: THT Max. forward impulse current: 325A |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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| CMA80MT1600NHB | IXYS |
Category: TriacsDescription: Triac; 1.6kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 325A Mounting: THT Case: TO247-3 Gate current: 70/90mA Max. off-state voltage: 1.6kV Max. load current: 40A Kind of package: tube Typ of triac: standard Max. forward impulse current: 325A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CMA60MT1600NHB | IXYS |
Category: TriacsDescription: Triac; 1.6kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 220A Mounting: THT Case: TO247-3 Gate current: 60/80mA Max. off-state voltage: 1.6kV Max. load current: 30A Kind of package: tube Typ of triac: standard Max. forward impulse current: 220A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CMA60MT1600NHR | IXYS |
Category: TriacsDescription: Triac; 1.6kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 220A Mounting: THT Case: ISO247™ Gate current: 60/80mA Max. off-state voltage: 1.6kV Max. load current: 30A Kind of package: tube Typ of triac: standard Max. forward impulse current: 220A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
DSP8-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 8A; Ifsm: 100A; TO220AB; tube; 100W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: TO220AB Max. forward voltage: 1.08V Max. forward impulse current: 100A Power dissipation: 100W Kind of package: tube |
на замовлення 162 шт: термін постачання 14-30 дні (днів) |
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DSP8-12AS-TRL | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: D2PAK Max. forward voltage: 1.08V Max. forward impulse current: 120kA Power dissipation: 100W Kind of package: reel; tape |
на замовлення 790 шт: термін постачання 14-30 дні (днів) |
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| CPC1968J |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control current: 10mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operate time: 4.6ms
Release time: 0.07ms
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control current max.: 100mA
Control voltage: 0.9...1.56V DC
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control current: 10mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operate time: 4.6ms
Release time: 0.07ms
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control current max.: 100mA
Control voltage: 0.9...1.56V DC
товару немає в наявності
В кошику
од. на суму грн.
| CPC1563G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 35Ω
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Turn-on time: 2ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 35Ω
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Turn-on time: 2ms
на замовлення 336 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 607.48 грн |
| 50+ | 369.72 грн |
| CPC1916Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SIP4
Max. operating current: 2.5A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 0.34Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 100V AC; max. 100V DC
Case: SIP4
Max. operating current: 2.5A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 0.34Ω
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1211.39 грн |
| 5+ | 1051.25 грн |
| 25+ | 992.53 грн |
| CPC1231N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.06 грн |
| 6+ | 184.44 грн |
| 10+ | 180.31 грн |
| 15+ | 174.52 грн |
| 100+ | 167.90 грн |
| CPC1393G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
товару немає в наявності
В кошику
од. на суму грн.
| CPC1966B |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 5kV
Turn-on time: 20µs
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: SO8
Max. operating current: 3A
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 21.08x16.76x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 5kV
Turn-on time: 20µs
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: SO8
Max. operating current: 3A
Control current max.: 50mA
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 582.54 грн |
| 10+ | 449.95 грн |
| 25+ | 440.02 грн |
| MDMA425P1600PTSF |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 10kA
Load current: 425A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 10kA
Load current: 425A
товару немає в наявності
В кошику
од. на суму грн.
| CPC1230N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.68 грн |
| CPC1231NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CPC1230NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXGR72N60B3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товару немає в наявності
В кошику
од. на суму грн.
| IXGR32N90B2D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Technology: HiPerFAST™; PT
Turn-on time: 42ns
Turn-off time: 690ns
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Technology: HiPerFAST™; PT
Turn-on time: 42ns
Turn-off time: 690ns
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| LDA111 |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V
Kind of output: Darlington
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V
Kind of output: Darlington
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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Мінімальне замовлення: 250 шт
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| LDA111STR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A
Kind of output: Darlington
Mounting: SMD
Type of optocoupler: optocoupler
Turn-off time: 345µs
Turn-on time: 8µs
Number of channels: 1
Trigger current: 1A
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A
Kind of output: Darlington
Mounting: SMD
Type of optocoupler: optocoupler
Turn-off time: 345µs
Turn-on time: 8µs
Number of channels: 1
Trigger current: 1A
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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| LDA111S |
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Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Mounting: SMD
Type of optocoupler: optocoupler
Turn-off time: 345µs
Turn-on time: 8µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Mounting: SMD
Type of optocoupler: optocoupler
Turn-off time: 345µs
Turn-on time: 8µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
Мінімальне замовлення: 100 шт
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| LDA110STR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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| IXTK210P10T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2335.49 грн |
| CPC1017NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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Мінімальне замовлення: 2000 шт
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| DSSK16-01A |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.68 грн |
| DSSK16-01AS |
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Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8Ax2; reel,tape; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
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| CLA120E1200HB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; 70mA; TO247-3; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 70mA
Max. off-state voltage: 1.2kV
Kind of package: tube
Case: TO247-3
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; 70mA; TO247-3; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 70mA
Max. off-state voltage: 1.2kV
Kind of package: tube
Case: TO247-3
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXFP8N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Drain-source voltage: 650V
Drain current: 8A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Drain-source voltage: 650V
Drain current: 8A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: THT
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.46 грн |
| 10+ | 144.74 грн |
| 50+ | 142.26 грн |
| IXFY8N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Drain-source voltage: 650V
Drain current: 8A
Case: TO252
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Drain-source voltage: 650V
Drain current: 8A
Case: TO252
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: SMD
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.02 грн |
| IXTY8N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Drain-source voltage: 650V
Drain current: 8A
Case: TO252
Polarisation: unipolar
On-state resistance: 0.5Ω
Power dissipation: 150W
Technology: X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 200ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Drain-source voltage: 650V
Drain current: 8A
Case: TO252
Polarisation: unipolar
On-state resistance: 0.5Ω
Power dissipation: 150W
Technology: X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 12nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 200ns
Mounting: SMD
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 165.68 грн |
| 10+ | 119.10 грн |
| IXFA8N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Drain-source voltage: 650V
Drain current: 8A
Case: TO263
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Drain-source voltage: 650V
Drain current: 8A
Case: TO263
Polarisation: unipolar
On-state resistance: 0.45Ω
Power dissipation: 150W
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 11nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Reverse recovery time: 105ns
Mounting: SMD
на замовлення 420 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.76 грн |
| 10+ | 51.28 грн |
| IXTH48N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: X2-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: X2-Class
на замовлення 158 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 964.66 грн |
| 2+ | 532.66 грн |
| 5+ | 502.88 грн |
| 120+ | 492.13 грн |
| IXTQ48N65X2M |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Drain-source voltage: 650V
Drain current: 48A
Case: TO3PF
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 70A
Power dissipation: 70W
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 76nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Drain-source voltage: 650V
Drain current: 48A
Case: TO3PF
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 70A
Power dissipation: 70W
Gate-source voltage: ±30V
Kind of package: tube
Gate charge: 76nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 815.02 грн |
| 3+ | 682.36 грн |
| 10+ | 602.96 грн |
| DK208DRP |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 4us; DPAK,SC63; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward impulse current: 180A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 4us; DPAK,SC63; Ifsm: 180A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 4µs
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward impulse current: 180A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| IXTP160N04T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
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| IXTA160N04T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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од. на суму грн.
| CPC9909N |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Operating temperature: -55...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Mounting: SMD
Input voltage: 8...550V
Output current: 2mA
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Operating temperature: -55...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Mounting: SMD
Input voltage: 8...550V
Output current: 2mA
на замовлення 685 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.53 грн |
| 5+ | 119.93 грн |
| 10+ | 107.52 грн |
| 25+ | 99.25 грн |
| CPC9909NE |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Operating temperature: -55...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8-EP
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Mounting: SMD
Input voltage: 8...550V
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Operating temperature: -55...85°C
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8-EP
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Mounting: SMD
Input voltage: 8...550V
на замовлення 1016 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 171.02 грн |
| 10+ | 119.10 грн |
| 15+ | 114.14 грн |
| 25+ | 107.52 грн |
| 50+ | 101.73 грн |
| 100+ | 100.08 грн |
| CPC9909NETR |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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Мінімальне замовлення: 2000 шт
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| CPC9909NTR |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
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Мінімальне замовлення: 2000 шт
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| MXHV9910B |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Mounting: SMD
Output voltage: 12V
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Frequency: 64kHz
Topology: buck
Input voltage: 8...450V
Output current: 0.28A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Mounting: SMD
Output voltage: 12V
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Frequency: 64kHz
Topology: buck
Input voltage: 8...450V
Output current: 0.28A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
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| MXHV9910BE |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Mounting: SMD
Output voltage: 12V
Kind of package: tube
Case: SO8-EP
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Frequency: 64kHz
Topology: buck
Input voltage: 8...450V
Output current: 0.28A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Mounting: SMD
Output voltage: 12V
Kind of package: tube
Case: SO8-EP
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Frequency: 64kHz
Topology: buck
Input voltage: 8...450V
Output current: 0.28A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
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| MXHV9910BETR |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Mounting: SMD
Output voltage: 12V
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Frequency: 64kHz
Topology: buck
Input voltage: 8...450V
Output current: 0.28A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Mounting: SMD
Output voltage: 12V
Kind of package: reel; tape
Case: SO8-EP
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Frequency: 64kHz
Topology: buck
Input voltage: 8...450V
Output current: 0.28A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
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Мінімальне замовлення: 2000 шт
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| MXHV9910BTR |
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Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Mounting: SMD
Output voltage: 12V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Frequency: 64kHz
Topology: buck
Input voltage: 8...450V
Output current: 0.28A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Mounting: SMD
Output voltage: 12V
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Frequency: 64kHz
Topology: buck
Input voltage: 8...450V
Output current: 0.28A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Integrated circuit features: linear dimming; PWM
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Мінімальне замовлення: 2000 шт
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| IXFP60N25X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 584.32 грн |
| 3+ | 492.13 грн |
| 10+ | 403.63 грн |
| 50+ | 378.81 грн |
| IXFP60N25X3M |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 95ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 95ns
Features of semiconductor devices: ultra junction x-class
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 588.77 грн |
| 3+ | 496.26 грн |
| 10+ | 406.94 грн |
| CPC1965G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x7.62x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x7.62x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
на замовлення 309 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.28 грн |
| 10+ | 425.13 грн |
| 25+ | 390.39 грн |
| IXTA76P10T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 494.36 грн |
| 3+ | 403.63 грн |
| 4+ | 299.41 грн |
| 9+ | 282.87 грн |
| IXTA76N25T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 148ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTA76P10T-TRL |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 100V; 76A; 298W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: P
Drain-source voltage: 100V
Drain current: 76A
Power dissipation: 298W
Case: D2PAK; TO263
Gate-source voltage: 15V
Mounting: SMD
Kind of channel: enhancement
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Мінімальне замовлення: 800 шт
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| IXFN56N90P |
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Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Pulsed drain current: 168A
Type of semiconductor module: MOSFET transistor
Category: Transistor modules
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Pulsed drain current: 168A
Type of semiconductor module: MOSFET transistor
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Мінімальне замовлення: 300 шт
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| IXBT14N300HV |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO268HV
Gate-emitter voltage: ±20V
Collector current: 38A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO268HV
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO268HV
Gate-emitter voltage: ±20V
Collector current: 38A
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Мінімальне замовлення: 30 шт
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| MCC132-12io1 |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 5.08kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 5.08kA
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5237.49 грн |
| 6+ | 4647.51 грн |
| MCC132-08io1 |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3862.21 грн |
| 3+ | 3348.13 грн |
| MCC132-16io1 |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Gate current: 150/200mA
Max. forward voltage: 1.14V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.75kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Gate current: 150/200mA
Max. forward voltage: 1.14V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.75kA
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| MCC132-14io1 |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.04kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 4.04kA
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| MCC132-18io1 |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| MCC132-18IO1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| MCC132-14IO1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| MCC132-16IO1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Gate current: 150/200mA
Max. forward voltage: 1.36V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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| CMA80MT1600NHR |
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Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 325A
Gate current: 70/90mA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
Max. forward impulse current: 325A
Category: Triacs
Description: Triac; 1.6kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 325A
Gate current: 70/90mA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
Max. forward impulse current: 325A
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 725.05 грн |
| 2+ | 508.67 грн |
| 6+ | 480.55 грн |
| 30+ | 462.35 грн |
| CMA80MT1600NHB |
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Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 325A
Mounting: THT
Case: TO247-3
Gate current: 70/90mA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 325A
Category: Triacs
Description: Triac; 1.6kV; 40A; Igt: 70/90mA; TO247-3; tube; Ifsm: 325A
Mounting: THT
Case: TO247-3
Gate current: 70/90mA
Max. off-state voltage: 1.6kV
Max. load current: 40A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 325A
товару немає в наявності
В кошику
од. на суму грн.
| CMA60MT1600NHB |
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Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 220A
Mounting: THT
Case: TO247-3
Gate current: 60/80mA
Max. off-state voltage: 1.6kV
Max. load current: 30A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 220A
Category: Triacs
Description: Triac; 1.6kV; 30A; Igt: 60/80mA; TO247-3; tube; Ifsm: 220A
Mounting: THT
Case: TO247-3
Gate current: 60/80mA
Max. off-state voltage: 1.6kV
Max. load current: 30A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 220A
товару немає в наявності
В кошику
од. на суму грн.
| CMA60MT1600NHR |
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Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 220A
Mounting: THT
Case: ISO247™
Gate current: 60/80mA
Max. off-state voltage: 1.6kV
Max. load current: 30A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 220A
Category: Triacs
Description: Triac; 1.6kV; 30A; Igt: 60/80mA; ISO247™; tube; Ifsm: 220A
Mounting: THT
Case: ISO247™
Gate current: 60/80mA
Max. off-state voltage: 1.6kV
Max. load current: 30A
Kind of package: tube
Typ of triac: standard
Max. forward impulse current: 220A
товару немає в наявності
В кошику
од. на суму грн.
| DSP8-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; Ifsm: 100A; TO220AB; tube; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; Ifsm: 100A; TO220AB; tube; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
на замовлення 162 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 315.32 грн |
| 5+ | 219.18 грн |
| 10+ | 183.62 грн |
| 25+ | 143.92 грн |
| 50+ | 124.07 грн |
| DSP8-12AS-TRL |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
на замовлення 790 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.89 грн |
| 5+ | 215.87 грн |
| 10+ | 196.85 грн |
| 25+ | 172.04 грн |
| 100+ | 157.98 грн |


































