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IXXH110N65B4 IXYS littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Gate charge: 183nC
Collector current: 250A
Gate-emitter voltage: ±20V
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IXTA12N50P IXTA12N50P IXYS IXTA12N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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IXYA50N65C5 IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
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IXYA50N65C3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Turn-off time: 90ns
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VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Version: module
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Electrical mounting: THT
Gate current: 25/50mA
Load current: 32A
Max. forward impulse current: 180A
Max. off-state voltage: 1.2kV
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+1255.31 грн
3+1028.51 грн
10+929.47 грн
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IXBT24N170 IXBT24N170 IXYS IXBH(t)24N170.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Type of transistor: IGBT
Features of semiconductor devices: high voltage
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
1+1394.79 грн
3+1163.11 грн
10+1086.92 грн
В кошику  од. на суму  грн.
LBA110STR IXYS LBA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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IXTK120N25P IXTK120N25P IXYS IXTK120N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 379 шт:
термін постачання 14-30 дні (днів)
1+1086.66 грн
5+864.29 грн
10+813.50 грн
В кошику  од. на суму  грн.
IXTP120P065T IXTP120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Technology: TrenchP™
Type of transistor: P-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: -120A
Drain-source voltage: -65V
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
Kind of channel: enhancement
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IXTQ120N20P IXTQ120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+737.51 грн
В кошику  од. на суму  грн.
IXTY1N120P IXTY1N120P IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Power dissipation: 63W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
на замовлення 74 шт:
термін постачання 14-30 дні (днів)
3+187.80 грн
5+156.60 грн
25+137.98 грн
70+131.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VBO25-12NO2 VBO25-12NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1634.55 грн
В кошику  од. на суму  грн.
GBO25-12NO1 GBO25-12NO1 IXYS GBO25-12NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
1+718.36 грн
5+616.26 грн
В кошику  од. на суму  грн.
VBO25-16AO2 VBO25-16AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+2233.49 грн
5+1980.84 грн
В кошику  од. на суму  грн.
GBO25-16NO1 GBO25-16NO1 IXYS GBO25-16NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
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VBO25-16NO2 VBO25-16NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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VBO25-12AO2 VBO25-12AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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IXBH14N300HV IXYS media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
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IXDD609PI IXDD609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 345 шт:
термін постачання 14-30 дні (днів)
4+123.98 грн
10+84.65 грн
50+79.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD609CI IXDD609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 656 шт:
термін постачання 14-30 дні (днів)
2+232.47 грн
10+166.76 грн
50+160.84 грн
100+150.68 грн
250+147.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD609SI IXDD609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 645 шт:
термін постачання 14-30 дні (днів)
3+195.09 грн
10+135.44 грн
25+131.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDD609YI IXDD609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 857 шт:
термін постачання 14-30 дні (днів)
2+231.55 грн
10+188.77 грн
50+165.92 грн
100+155.76 грн
250+154.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD609D2TR IXDD609D2TR IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
4+120.33 грн
10+83.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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PLB190 PLB190 IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
1+747.53 грн
10+602.72 грн
50+518.07 грн
В кошику  од. на суму  грн.
PLB190S PLB190S IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+743.89 грн
В кошику  од. на суму  грн.
PLB190STR IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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CPC1965Y CPC1965Y IXYS CPC1965G.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 1A
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 260V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 237 шт:
термін постачання 14-30 дні (днів)
1+834.14 грн
10+713.61 грн
25+685.67 грн
В кошику  од. на суму  грн.
CPC1945Y CPC1945Y IXYS CPC1945Y.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 1A
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
On-state resistance: 0.34Ω
Switched voltage: max. 120V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
2+433.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PD1201 PD1201 IXYS PD1201.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Insulation voltage: 3.75kV
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Relay variant: 1-phase
Switched voltage: max. 400V AC
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
1+1201.53 грн
10+912.54 грн
25+807.57 грн
100+743.24 грн
В кошику  од. на суму  грн.
CPC1943G CPC1943G IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
1+1077.54 грн
В кошику  од. на суму  грн.
CPC1943GS CPC1943GS IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+853.28 грн
В кошику  од. на суму  грн.
LCA210S LCA210S IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
1+804.06 грн
50+489.28 грн
В кошику  од. на суму  грн.
CPC1967J CPC1967J IXYS CPC1967.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1350mA
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 74 шт:
термін постачання 14-30 дні (днів)
1+2207.05 грн
25+1974.07 грн
В кошику  од. на суму  грн.
LCA220 LCA220 IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 100mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LCA210 LCA210 IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
1+487.72 грн
10+442.73 грн
В кошику  од. на суму  грн.
IXGH30N60C3D1 IXGH30N60C3D1 IXYS IXGH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 220W
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 45ns
Gate charge: 38nC
Turn-off time: 160ns
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IXXH30N60C3 IXYS littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
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MCMA35PD1600TB MCMA35PD1600TB IXYS MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 35A
Case: TO240AA
Max. forward voltage: 1.22V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 55A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.87V
Gate current: 78/200mA
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
1+1640.93 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08IO1B IXYS MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1481.40 грн
В кошику  од. на суму  грн.
MCD95-16IO1B MCD95-16IO1B IXYS MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 180A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 150/200mA
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
1+2758.59 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08IO1B IXYS MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+2248.07 грн
3+1843.70 грн
10+1660.86 грн
В кошику  од. на суму  грн.
MCD72-12IO1B MCD72-12IO1B IXYS MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 150/200mA
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+2814.20 грн
3+2308.44 грн
10+2090.04 грн
В кошику  од. на суму  грн.
MCD162-16io1 MCD162-16io1 IXYS MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.88V
Gate current: 150/200mA
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+5226.36 грн
В кошику  од. на суму  грн.
MCD162-18io1 MCD162-18io1 IXYS MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.88V
Gate current: 150/200mA
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+4858.98 грн
В кошику  од. на суму  грн.
DSA1-18D DSA1-18D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
2+383.80 грн
10+243.80 грн
100+233.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN55N50 IXFN55N50 IXYS 97502.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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CPC1020N CPC1020N IXYS cpc1020n.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR CPC1020NTR IXYS CPC1020N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CLA100E1200TZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Load current: 100A
Max. load current: 160A
Max. off-state voltage: 1.2kV
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Kind of package: tube
Gate current: 40mA
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CPC2014N CPC2014N IXYS CPC2014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
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CPC2025NTR IXYS CPC2025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Mounting: SMT
Manufacturer series: OptoMOS
Case: SO8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
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CPC2014NTR IXYS CPC2014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
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VHFD37-16IO1 VHFD37-16IO1 IXYS VHFD37-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+2680.19 грн
10+2310.98 грн
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IXFN32N120P IXFN32N120P IXYS IXFN32N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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MG12100S-BN2MM IXYS media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
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MG12150W-XN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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MG12200D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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DSEC240-04A DSEC240-04A IXYS DSEC240-04A.pdf description Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. forward impulse current: 2kA
Max. off-state voltage: 0.4kV
Load current: 120A x2
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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IXXH110N65B4 littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Gate charge: 183nC
Collector current: 250A
Gate-emitter voltage: ±20V
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IXTA12N50P IXTA12N50P-DTE.pdf
IXTA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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IXYA50N65C5
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
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IXYA50N65C3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Turn-off time: 90ns
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VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Version: module
Mechanical mounting: screw
Features of semiconductor devices: freewheelling diode
Type of bridge rectifier: half-controlled
Electrical mounting: THT
Gate current: 25/50mA
Load current: 32A
Max. forward impulse current: 180A
Max. off-state voltage: 1.2kV
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1255.31 грн
3+1028.51 грн
10+929.47 грн
В кошику  од. на суму  грн.
IXBT24N170 IXBH(t)24N170.pdf
IXBT24N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Power dissipation: 250W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Pulsed collector current: 230A
Type of transistor: IGBT
Features of semiconductor devices: high voltage
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1394.79 грн
3+1163.11 грн
10+1086.92 грн
В кошику  од. на суму  грн.
LBA110STR LBA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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IXTK120N25P IXTK120N25P-DTE.pdf
IXTK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 379 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1086.66 грн
5+864.29 грн
10+813.50 грн
В кошику  од. на суму  грн.
IXTP120P065T IXT_120P065T.pdf
IXTP120P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Technology: TrenchP™
Type of transistor: P-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: -120A
Drain-source voltage: -65V
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
Kind of channel: enhancement
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IXTQ120N20P IXTK120N20P-DTE.pdf
IXTQ120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Power dissipation: 714W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+737.51 грн
В кошику  од. на суму  грн.
IXTY1N120P IXTY(A,P)1N120P.pdf
IXTY1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Type of transistor: N-MOSFET
Power dissipation: 63W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
на замовлення 74 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+187.80 грн
5+156.60 грн
25+137.98 грн
70+131.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VBO25-12NO2 VBO25_ser.pdf
VBO25-12NO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1634.55 грн
В кошику  од. на суму  грн.
GBO25-12NO1 GBO25-12NO1.pdf
GBO25-12NO1
Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+718.36 грн
5+616.26 грн
В кошику  од. на суму  грн.
VBO25-16AO2 VBO25_ser.pdf
VBO25-16AO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2233.49 грн
5+1980.84 грн
В кошику  од. на суму  грн.
GBO25-16NO1 GBO25-16NO1.pdf
GBO25-16NO1
Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
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VBO25-16NO2 VBO25_ser.pdf
VBO25-16NO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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В кошику  од. на суму  грн.
VBO25-12AO2 VBO25_ser.pdf
VBO25-12AO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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IXBH14N300HV media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Collector-emitter voltage: 3kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 62nC
Gate-emitter voltage: ±20V
Collector current: 38A
Pulsed collector current: 120A
Power dissipation: 200W
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IXDD609PI IXDD609CI.pdf
IXDD609PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 345 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+123.98 грн
10+84.65 грн
50+79.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD609CI IXDD609CI.pdf
IXDD609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 656 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+232.47 грн
10+166.76 грн
50+160.84 грн
100+150.68 грн
250+147.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD609SI IXDD609CI.pdf
IXDD609SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 645 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+195.09 грн
10+135.44 грн
25+131.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDD609YI IXDD609CI.pdf
IXDD609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 857 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+231.55 грн
10+188.77 грн
50+165.92 грн
100+155.76 грн
250+154.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD609D2TR IXDD609CI.pdf
IXDD609D2TR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+120.33 грн
10+83.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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PLB190 PLB190.pdf
PLB190
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+747.53 грн
10+602.72 грн
50+518.07 грн
В кошику  од. на суму  грн.
PLB190S PLB190.pdf
PLB190S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+743.89 грн
В кошику  од. на суму  грн.
PLB190STR PLB190.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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CPC1965Y CPC1965G.pdf
CPC1965Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 1A
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 260V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 237 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+834.14 грн
10+713.61 грн
25+685.67 грн
В кошику  од. на суму  грн.
CPC1945Y CPC1945Y.pdf
CPC1945Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 1A
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
On-state resistance: 0.34Ω
Switched voltage: max. 120V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: SIP4
Switching method: zero voltage switching
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+433.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PD1201 PD1201.pdf
PD1201
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Insulation voltage: 3.75kV
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Relay variant: 1-phase
Switched voltage: max. 400V AC
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1201.53 грн
10+912.54 грн
25+807.57 грн
100+743.24 грн
В кошику  од. на суму  грн.
CPC1943G CPC1943.pdf
CPC1943G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1077.54 грн
В кошику  од. на суму  грн.
CPC1943GS CPC1943.pdf
CPC1943GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+853.28 грн
В кошику  од. на суму  грн.
LCA210S LCA210.pdf
LCA210S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+804.06 грн
50+489.28 грн
В кошику  од. на суму  грн.
CPC1967J CPC1967.pdf
CPC1967J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1350mA
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 74 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2207.05 грн
25+1974.07 грн
В кошику  од. на суму  грн.
LCA220 LCA220.pdf
LCA220
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 100mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LCA210 LCA210.pdf
LCA210
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+487.72 грн
10+442.73 грн
В кошику  од. на суму  грн.
IXGH30N60C3D1 IXGH30N60C3D1.pdf
IXGH30N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 220W
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 45ns
Gate charge: 38nC
Turn-off time: 160ns
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IXXH30N60C3 littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
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MCMA35PD1600TB MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA35PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 35A
Case: TO240AA
Max. forward voltage: 1.22V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 55A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.87V
Gate current: 78/200mA
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1640.93 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCD26-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1481.40 грн
В кошику  од. на суму  грн.
MCD95-16IO1B MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD95-16IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 180A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 150/200mA
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2758.59 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD56-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2248.07 грн
3+1843.70 грн
10+1660.86 грн
В кошику  од. на суму  грн.
MCD72-12IO1B MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD72-12IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 150/200mA
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2814.20 грн
3+2308.44 грн
10+2090.04 грн
В кошику  од. на суму  грн.
MCD162-16io1 MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf
MCD162-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.88V
Gate current: 150/200mA
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+5226.36 грн
В кошику  од. на суму  грн.
MCD162-18io1 MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD162-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.88V
Gate current: 150/200mA
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+4858.98 грн
В кошику  од. на суму  грн.
DSA1-18D DSA1-18D.pdf
DSA1-18D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+383.80 грн
10+243.80 грн
100+233.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN55N50 description 97502.pdf
IXFN55N50
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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CPC1020N cpc1020n.pdf
CPC1020N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR CPC1020N.pdf
CPC1020NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CLA100E1200TZ-TUB Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Load current: 100A
Max. load current: 160A
Max. off-state voltage: 1.2kV
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Kind of package: tube
Gate current: 40mA
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CPC2014N CPC2014N.pdf
CPC2014N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
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CPC2025NTR CPC2025N.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Mounting: SMT
Manufacturer series: OptoMOS
Case: SO8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
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CPC2014NTR CPC2014N.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
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VHFD37-16IO1 VHFD37-ser.pdf
VHFD37-16IO1
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2680.19 грн
10+2310.98 грн
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IXFN32N120P IXFN32N120P.pdf
IXFN32N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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MG12100S-BN2MM media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
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MG12150W-XN2MM littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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MG12200D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
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MG12300D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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DSEC240-04A description DSEC240-04A.pdf
DSEC240-04A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. forward impulse current: 2kA
Max. off-state voltage: 0.4kV
Load current: 120A x2
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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