| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTQ50N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
на замовлення 203 шт: термін постачання 14-30 дні (днів) |
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IXTP50N25T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
на замовлення 284 шт: термін постачання 14-30 дні (днів) |
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IXTA50N20P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTP50N20PM | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: Polar™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTA50N25T | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSB15IM30UC-TRL | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 15A Semiconductor structure: single diode Case: DPAK; SC63 Max. forward voltage: 0.51V Max. forward impulse current: 0.3kA Kind of package: reel; tape Leakage current: 5mA |
товару немає в наявності |
Мінімальне замовлення: 32000 шт В кошику од. на суму грн. | ||||||||||
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DPF240X400NA | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw Max. forward voltage: 1.06V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 0.4kV Electrical mounting: screw Load current: 120A x2 Max. load current: 240A Kind of package: tube Semiconductor structure: double independent Case: SOT227B Max. forward impulse current: 1.2kA |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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IXYP60N65A5 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 134A; 395W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 134A Power dissipation: 395W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 128nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXYA60N65A5 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 395W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 395W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: SMD Gate charge: 128nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXYA60N65A5-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; TO263 Type of transistor: IGBT Case: TO263 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
| IXYH60N65A5 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 395W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 395W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 128nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||
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CPC1006N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Case: SOP4 On-state resistance: 10Ω Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 10ms Switched voltage: max. 60V AC; max. 60V DC Max. operating current: 75mA Turn-off time: 10ms Control current max.: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
на замовлення 1180 шт: термін постачання 14-30 дні (днів) |
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CPC1018N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.8Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXXP12N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3 Type of transistor: IGBT Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 38A Collector-emitter voltage: 650V Gate-emitter voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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DSEC16-06A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W Reverse recovery time: 30ns Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 2.1V Power dissipation: 60W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Heatsink thickness: 1.14...1.39mm Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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DSEC16-06AC | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; ISOPLUS220™; tube Reverse recovery time: 30ns Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 2.1V Power dissipation: 60W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: ISOPLUS220™ Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSEC16-12AS-TRL | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V Reverse recovery time: 40ns Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 2.94V Technology: FRED Max. off-state voltage: 1.2kV Load current: 8A Kind of package: reel; tape Semiconductor structure: common cathode Case: D2PAK; TO263AB Type of diode: rectifying |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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IXFK100N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns Power dissipation: 1.04kW Gate charge: 183nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 100A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 30mΩ Reverse recovery time: 200ns Mounting: THT |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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VHF25-12IO7 | IXYS |
Category: Single phase controlled bridge rectif.Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; screw Max. off-state voltage: 1.2kV Load current: 32A Case: ECO-PAC 1 Max. forward impulse current: 180A Electrical mounting: Press-in PCB Mechanical mounting: screw Version: module Features of semiconductor devices: freewheelling diode Leads: wire Ø 0.75mm Type of bridge rectifier: half-controlled Gate current: 25/50mA |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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IXBT24N170 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Features of semiconductor devices: high voltage Pulsed collector current: 230A Type of transistor: IGBT Turn-on time: 190ns Turn-off time: 1285ns Gate-emitter voltage: ±20V Collector current: 24A Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 0.14µC |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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IXTK120N25P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264 Reverse recovery time: 200ns Mounting: THT Power dissipation: 700W Gate charge: 185nC Polarisation: unipolar Technology: Polar™ Drain current: 120A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 24mΩ |
на замовлення 428 шт: термін постачання 14-30 дні (днів) |
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IXTP120P065T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Mounting: THT Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO220AB On-state resistance: 10mΩ Reverse recovery time: 53ns Power dissipation: 298W Gate charge: 185nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -65V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTQ120N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P Reverse recovery time: 180ns Mounting: THT Power dissipation: 714W Gate charge: 152nC Polarisation: unipolar Technology: PolarHT™ Drain current: 120A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO3P On-state resistance: 22mΩ |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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IXTY1N120P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: TO252 Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Reverse recovery time: 900ns On-state resistance: 20Ω Power dissipation: 63W |
на замовлення 74 шт: термін постачання 14-30 дні (днів) |
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VBO25-12NO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Version: square Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 38A Max. forward impulse current: 370A Max. off-state voltage: 1.2kV Case: FO-A Kind of package: bulk Leads: connectors FASTON |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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GBO25-12NO1 | IXYS |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Version: flat Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 25A Max. forward impulse current: 370A Max. off-state voltage: 1.2kV Case: GBFP Kind of package: tube Leads: flat pin |
на замовлення 63 шт: термін постачання 14-30 дні (днів) |
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VBO25-16AO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: avalanche breakdown effect Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBO25-16NO1 | IXYS |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 370A Version: flat Case: GBFP Electrical mounting: THT Leads: flat pin Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VBO25-16NO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VBO25-12AO2 | IXYS |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Features of semiconductor devices: avalanche breakdown effect |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXDD609CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 404 шт: термін постачання 14-30 дні (днів) |
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IXDD609SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 620 шт: термін постачання 14-30 дні (днів) |
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IXDD609YI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 807 шт: термін постачання 14-30 дні (днів) |
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IXDD609D2TR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V Case: DFN8 Mounting: SMD Output current: -9...9A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Turn-on time: 115ns Kind of package: reel; tape Turn-off time: 105ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 Supply voltage: 4.5...35V |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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| IXDD609SITR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
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PLB190 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
на замовлення 240 шт: термін постачання 14-30 дні (днів) |
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PLB190S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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| PLB190STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
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CPC1965Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 260V AC Case: SIP4 Max. operating current: 1A Control current max.: 100mA |
на замовлення 228 шт: термін постачання 14-30 дні (днів) |
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CPC1945Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS Type of relay: solid state Max. operating current: 1A Switched voltage: max. 120V AC Manufacturer series: OptoMOS Relay variant: 1-phase On-state resistance: 0.34Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Kind of output: MOSFET Body dimensions: 19.2x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Switching method: zero voltage switching Turn-off time: 3ms Control current max.: 100mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PD1201 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase Operating temperature: -40...85°C Insulation voltage: 3.75kV Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP4 Max. operating current: 1A Control current max.: 100mA |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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CPC1943G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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CPC1943GS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Type of relay: solid state Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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LCA210S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
на замовлення 93 шт: термін постачання 14-30 дні (днів) |
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CPC1967J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC Type of relay: solid state Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 19.91x20.88x5.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 400V AC; max. 400V DC Case: i4-pac Max. operating current: 1350mA Turn-off time: 5ms Control current max.: 100mA On-state resistance: 0.85Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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LCA220 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC Type of relay: solid state Contacts configuration: SPDT Max. operating current: 120mA Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 250V AC; max. 250V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Case: DIP8 Turn-off time: 5ms Control current max.: 100mA On-state resistance: 20Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
на замовлення 82 шт: термін постачання 14-30 дні (днів) |
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LCA210 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: THT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
на замовлення 45 шт: термін постачання 14-30 дні (днів) |
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IXGH30N60C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 220W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Technology: GenX3™; PT Pulsed collector current: 150A Turn-on time: 45ns Turn-off time: 160ns Gate charge: 38nC |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
| IXXH30N60C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 60A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 110A Gate charge: 37nC |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||
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MCMA35PD1600TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk Gate current: 78/200mA Max. forward voltage: 1.22V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Load current: 35A Max. load current: 55A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.87V Case: TO240AA Max. forward impulse current: 520A |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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MCD26-08IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Features of semiconductor devices: Kelvin terminal Gate current: 100/200mA Max. forward voltage: 1.27V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: FASTON connectors; screw Load current: 27A Max. load current: 42A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Max. forward impulse current: 520A |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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MCD95-16IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Load current: 116A Max. load current: 180A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Case: TO240AA Max. forward impulse current: 2.25kA Gate current: 150/200mA Max. forward voltage: 1.28V |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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MCD56-08IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk Case: TO240AA Features of semiconductor devices: Kelvin terminal Gate current: 100/200mA Max. forward voltage: 1.24V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: FASTON connectors; screw Load current: 60A Max. load current: 100A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Max. forward impulse current: 1.5kA |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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MCD72-12IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk Case: TO240AA Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Max. forward voltage: 1.34V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Load current: 85A Max. load current: 133A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.85V Max. forward impulse current: 1.7kA |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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MCD162-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. forward impulse current: 6kA Gate current: 150/200mA Max. forward voltage: 1.03V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: FASTON connectors; screw Load current: 181A Max. load current: 300A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.88V Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSA1-18D | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.8kV; 2.3A; Ifsm: 110A; FP-Case; tube Type of diode: rectifying Max. off-state voltage: 1.8kV Load current: 2.3A Semiconductor structure: single diode Case: FP-Case Mounting: THT Max. forward voltage: 1.34V Max. forward impulse current: 110A Features of semiconductor devices: avalanche breakdown effect Kind of package: tube |
на замовлення 384 шт: термін постачання 14-30 дні (днів) |
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IXFN55N50 | IXYS |
Category: Transistor modulesDescription: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 55A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 80mΩ Pulsed drain current: 220A Power dissipation: 625W Technology: HiPerFET™ Kind of channel: enhancement Gate charge: 330nC Reverse recovery time: 250ns Gate-source voltage: ±40V Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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CPC1020N | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω Case: SOP4 On-state resistance: 0.25Ω Switched voltage: max. 30V AC; max. 30V DC Max. operating current: 1.2A Turn-off time: 3ms Control current max.: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 3ms |
на замовлення 589 шт: термін постачання 14-30 дні (днів) |
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CPC1020NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
| CLA100E1200TZ-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD Mounting: SMD Case: D3PAK; TO268AA Type of thyristor: thyristor Gate current: 40mA Max. off-state voltage: 1.2kV Load current: 100A Max. load current: 160A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| IXTQ50N20P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
на замовлення 203 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 401.72 грн |
| 10+ | 283.70 грн |
| 30+ | 254.75 грн |
| 60+ | 236.55 грн |
| 120+ | 217.53 грн |
| IXTP50N25T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 284 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 414.19 грн |
| 10+ | 332.50 грн |
| 25+ | 280.39 грн |
| 50+ | 234.07 грн |
| 100+ | 225.80 грн |
| IXTA50N20P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
товару немає в наявності
В кошику
од. на суму грн.
| IXTP50N20PM |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
товару немає в наявності
В кошику
од. на суму грн.
| IXTA50N25T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику
од. на суму грн.
| DSB15IM30UC-TRL |
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Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
товару немає в наявності
Мінімальне замовлення: 32000 шт
В кошику
од. на суму грн.
| DPF240X400NA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Max. forward impulse current: 1.2kA
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Max. forward impulse current: 1.2kA
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2986.62 грн |
| 10+ | 2769.15 грн |
| IXYP60N65A5 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 134A
Power dissipation: 395W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 134A
Power dissipation: 395W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYA60N65A5 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 395W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: SMD
Gate charge: 128nC
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 395W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: SMD
Gate charge: 128nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYA60N65A5-TRL |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IXYH60N65A5 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| CPC1006N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Case: SOP4
On-state resistance: 10Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 75mA
Turn-off time: 10ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Case: SOP4
On-state resistance: 10Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 75mA
Turn-off time: 10ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
на замовлення 1180 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.96 грн |
| 10+ | 71.13 грн |
| CPC1018N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| IXXP12N65B4 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
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Мінімальне замовлення: 300 шт
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| DSEC16-06A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 166.25 грн |
| 10+ | 121.58 грн |
| DSEC16-06AC |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; ISOPLUS220™; tube
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; ISOPLUS220™; tube
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Type of diode: rectifying
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| DSEC16-12AS-TRL |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Reverse recovery time: 40ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 2.94V
Technology: FRED
Max. off-state voltage: 1.2kV
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Reverse recovery time: 40ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 2.94V
Technology: FRED
Max. off-state voltage: 1.2kV
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Type of diode: rectifying
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Мінімальне замовлення: 800 шт
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| IXFK100N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Power dissipation: 1.04kW
Gate charge: 183nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 30mΩ
Reverse recovery time: 200ns
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Power dissipation: 1.04kW
Gate charge: 183nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 30mΩ
Reverse recovery time: 200ns
Mounting: THT
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1462.58 грн |
| VHF25-12IO7 |
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Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; screw
Max. off-state voltage: 1.2kV
Load current: 32A
Case: ECO-PAC 1
Max. forward impulse current: 180A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Leads: wire Ø 0.75mm
Type of bridge rectifier: half-controlled
Gate current: 25/50mA
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; screw
Max. off-state voltage: 1.2kV
Load current: 32A
Case: ECO-PAC 1
Max. forward impulse current: 180A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Features of semiconductor devices: freewheelling diode
Leads: wire Ø 0.75mm
Type of bridge rectifier: half-controlled
Gate current: 25/50mA
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1226.54 грн |
| 3+ | 1004.93 грн |
| 10+ | 908.16 грн |
| IXBT24N170 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 190ns
Turn-off time: 1285ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Pulsed collector current: 230A
Type of transistor: IGBT
Turn-on time: 190ns
Turn-off time: 1285ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1192.69 грн |
| 3+ | 1047.12 грн |
| IXTK120N25P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
на замовлення 428 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 878.26 грн |
| 5+ | 785.75 грн |
| 10+ | 756.80 грн |
| 25+ | 731.16 грн |
| IXTP120P065T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
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| IXTQ120N20P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 22mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 22mΩ
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 720.60 грн |
| IXTY1N120P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
на замовлення 74 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 183.49 грн |
| 5+ | 153.01 грн |
| 25+ | 134.82 грн |
| 70+ | 127.37 грн |
| VBO25-12NO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1597.08 грн |
| GBO25-12NO1 |
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Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 701.90 грн |
| 5+ | 602.13 грн |
| VBO25-16AO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
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| GBO25-16NO1 |
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Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
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| VBO25-16NO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| VBO25-12AO2 |
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Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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| IXDD609CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 404 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.14 грн |
| 6+ | 158.80 грн |
| 17+ | 149.71 грн |
| 100+ | 147.22 грн |
| 250+ | 143.92 грн |
| IXDD609SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 620 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 197.74 грн |
| 10+ | 138.13 грн |
| 25+ | 132.34 грн |
| 100+ | 128.20 грн |
| IXDD609YI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 807 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.25 грн |
| 10+ | 184.44 грн |
| 50+ | 162.11 грн |
| 100+ | 152.19 грн |
| 250+ | 148.88 грн |
| IXDD609D2TR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Case: DFN8
Mounting: SMD
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Kind of package: reel; tape
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Case: DFN8
Mounting: SMD
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Kind of package: reel; tape
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Supply voltage: 4.5...35V
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 132.72 грн |
| 10+ | 94.29 грн |
| IXDD609SITR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| PLB190 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 730.40 грн |
| 2+ | 545.89 грн |
| 5+ | 516.11 грн |
| 50+ | 506.19 грн |
| PLB190S |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 726.84 грн |
| 3+ | 454.91 грн |
| 6+ | 430.10 грн |
| PLB190STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CPC1965Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
на замовлення 228 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 815.02 грн |
| 10+ | 697.25 грн |
| 25+ | 669.96 грн |
| CPC1945Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Turn-off time: 3ms
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Turn-off time: 3ms
Control current max.: 100mA
товару немає в наявності
В кошику
од. на суму грн.
| PD1201 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1173.98 грн |
| 10+ | 891.62 грн |
| 25+ | 789.06 грн |
| 100+ | 668.30 грн |
| CPC1943G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1052.84 грн |
| CPC1943GS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 833.72 грн |
| LCA210S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 785.62 грн |
| 50+ | 478.07 грн |
| CPC1967J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 400V AC; max. 400V DC
Case: i4-pac
Max. operating current: 1350mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Type of relay: solid state
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 19.91x20.88x5.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 400V AC; max. 400V DC
Case: i4-pac
Max. operating current: 1350mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.85Ω
товару немає в наявності
В кошику
од. на суму грн.
| LCA220 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 818.58 грн |
| 10+ | 617.85 грн |
| 50+ | 544.24 грн |
| LCA210 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 476.54 грн |
| 10+ | 432.58 грн |
| IXGH30N60C3D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 160ns
Gate charge: 38nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: GenX3™; PT
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 160ns
Gate charge: 38nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXXH30N60C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 110A
Gate charge: 37nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 110A
Gate charge: 37nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| MCMA35PD1600TB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 904.98 грн |
| 2+ | 806.43 грн |
| 4+ | 762.59 грн |
| 36+ | 734.47 грн |
| MCD26-08IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 520A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 520A
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 804.33 грн |
| MCD95-16IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 116A
Max. load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Max. forward voltage: 1.28V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 116A
Max. load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Max. forward voltage: 1.28V
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2809.36 грн |
| 5+ | 2502.82 грн |
| MCD56-08IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Max. forward voltage: 1.24V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 60A
Max. load current: 100A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.5kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 100/200mA
Max. forward voltage: 1.24V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 60A
Max. load current: 100A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.5kA
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2196.54 грн |
| 3+ | 1801.44 грн |
| 10+ | 1622.78 грн |
| MCD72-12IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 133A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.7kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 133A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.7kA
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2749.68 грн |
| 3+ | 2255.52 грн |
| 10+ | 2024.76 грн |
| MCD162-16io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
товару немає в наявності
В кошику
од. на суму грн.
| DSA1-18D |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; Ifsm: 110A; FP-Case; tube
Type of diode: rectifying
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Case: FP-Case
Mounting: THT
Max. forward voltage: 1.34V
Max. forward impulse current: 110A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
на замовлення 384 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 377.67 грн |
| 10+ | 241.52 грн |
| 100+ | 228.28 грн |
| IXFN55N50 |
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Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 55A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Pulsed drain current: 220A
Power dissipation: 625W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 330nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 55A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 80mΩ
Pulsed drain current: 220A
Power dissipation: 625W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 330nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| CPC1020N |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Case: SOP4
On-state resistance: 0.25Ω
Switched voltage: max. 30V AC; max. 30V DC
Max. operating current: 1.2A
Turn-off time: 3ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Case: SOP4
On-state resistance: 0.25Ω
Switched voltage: max. 30V AC; max. 30V DC
Max. operating current: 1.2A
Turn-off time: 3ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
на замовлення 589 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 710.80 грн |
| 3+ | 315.13 грн |
| 9+ | 298.59 грн |
| CPC1020NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CLA100E1200TZ-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Gate current: 40mA
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Gate current: 40mA
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.


















































