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VBO25-12AO2 VBO25-12AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
товару немає в наявності
В кошику  од. на суму  грн.
IXBH14N300HV IXYS littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 38A
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXDD609PI IXDD609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 328 шт:
термін постачання 14-30 дні (днів)
4+122.83 грн
10+83.86 грн
50+77.16 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXDD609CI IXDD609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 654 шт:
термін постачання 14-30 дні (днів)
2+230.31 грн
10+165.21 грн
50+159.34 грн
100+149.28 грн
250+145.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDD609SI IXDD609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 645 шт:
термін постачання 14-30 дні (днів)
3+200.50 грн
10+140.05 грн
25+134.18 грн
100+129.99 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDD609YI IXDD609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 857 шт:
термін постачання 14-30 дні (днів)
2+229.40 грн
10+187.02 грн
50+164.38 грн
100+154.31 грн
250+151.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDD609D2TR IXDD609D2TR IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Case: DFN8
Mounting: SMD
Number of channels: 1
Supply voltage: 4.5...35V
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Kind of package: reel; tape
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
4+119.22 грн
10+83.03 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXDD609SITR IXDD609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
PLB190 PLB190 IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
1+740.59 грн
10+597.12 грн
50+513.25 грн
В кошику  од. на суму  грн.
PLB190S PLB190S IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+736.98 грн
В кошику  од. на суму  грн.
PLB190STR IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1965Y CPC1965Y IXYS CPC1965G.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
на замовлення 228 шт:
термін постачання 14-30 дні (днів)
1+826.39 грн
10+706.98 грн
25+679.31 грн
В кошику  од. на суму  грн.
CPC1945Y CPC1945Y IXYS CPC1945Y.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Switched voltage: max. 120V AC
Case: SIP4
Max. operating current: 1A
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 0.34Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Kind of output: MOSFET
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+538.28 грн
В кошику  од. на суму  грн.
PD1201 PD1201 IXYS PD1201.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
1+1190.37 грн
10+904.06 грн
25+800.07 грн
100+677.63 грн
В кошику  од. на суму  грн.
CPC1943G CPC1943G IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
1+1067.54 грн
В кошику  од. на суму  грн.
CPC1943GS CPC1943GS IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+845.36 грн
В кошику  од. на суму  грн.
LCA210S LCA210S IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
1+796.59 грн
50+484.74 грн
В кошику  од. на суму  грн.
CPC1967J CPC1967J IXYS CPC1967.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 400V AC; max. 400V DC
Case: i4-pac
Max. operating current: 1350mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LCA220 LCA220 IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
1+830.00 грн
10+626.47 грн
50+551.83 грн
В кошику  од. на суму  грн.
LCA210 LCA210 IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
1+483.19 грн
10+438.61 грн
В кошику  од. на суму  грн.
IXGH30N60C3D1 IXGH30N60C3D1 IXYS IXGH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 220W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXH30N60C3 IXYS littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 110A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 600V
Power dissipation: 270W
Gate charge: 37nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCMA35PD1600TB MCMA35PD1600TB IXYS MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
Gate current: 78/200mA
Max. forward voltage: 1.22V
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
1+1625.69 грн
3+1408.93 грн
10+1361.97 грн
36+1257.97 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08IO1B IXYS MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1467.64 грн
В кошику  од. на суму  грн.
MCD95-16IO1B MCD95-16IO1B IXYS MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 116A
Max. load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Max. forward voltage: 1.28V
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+2848.57 грн
5+2537.75 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08IO1B IXYS MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 60A
Max. load current: 100A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Max. forward voltage: 1.24V
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+2227.19 грн
3+1826.58 грн
10+1645.43 грн
В кошику  од. на суму  грн.
MCD72-12IO1B MCD72-12IO1B IXYS MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 133A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Max. forward voltage: 1.34V
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+2788.06 грн
3+2287.00 грн
10+2053.01 грн
В кошику  од. на суму  грн.
MCD162-16io1 MCD162-16io1 IXYS MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+5177.82 грн
В кошику  од. на суму  грн.
MCD162-18io1 MCD162-18io1 IXYS MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+4813.85 грн
В кошику  од. на суму  грн.
DSA1-18D DSA1-18D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
2+380.23 грн
10+241.53 грн
100+231.47 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN55N50 IXFN55N50 IXYS 97502.pdf description Category: Transistor modules
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
товару немає в наявності
 Мінімальне замовлення: 300 шт
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CPC1020N CPC1020N IXYS cpc1020n.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 30V AC; max. 30V DC
Case: SOP4
Max. operating current: 1.2A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
на замовлення 1625 шт:
термін постачання 14-30 дні (днів)
1+704.47 грн
100+545.96 грн
500+436.10 грн
В кошику  од. на суму  грн.
CPC1020NTR CPC1020NTR IXYS CPC1020N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 30V AC; max. 30V DC
Case: SOP4
Max. operating current: 1.2A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CLA100E1200TZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Gate current: 40mA
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
VHFD37-16IO1 VHFD37-16IO1 IXYS VHFD37-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+2655.29 грн
10+2289.51 грн
В кошику  од. на суму  грн.
MG12100S-BN2MM IXYS media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: package S
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT half-bridge
товару немає в наявності
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MG12150W-XN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: package W
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
товару немає в наявності
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MG12200D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: Y3-DCB
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT half-bridge
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DSEC240-04A DSEC240-04A IXYS DSEC240-04A.pdf description Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Max. forward voltage: 1V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: SOT227UI
Max. forward impulse current: 2kA
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DSA320A100NB DSA320A100NB IXYS Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.77V
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 0.1kV
Load current: 80A x4
Kind of package: tube
Semiconductor structure: common anode; double x2
Case: SOT227B
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+2151.33 грн
3+1766.20 грн
В кошику  од. на суму  грн.
IXFR102N30P IXFR102N30P IXYS IXFR102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Power dissipation: 250W
Gate charge: 224nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+1240.04 грн
3+1025.67 грн
В кошику  од. на суму  грн.
IXFK120N20P IXFK120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 22mΩ
Reverse recovery time: 100ns
Mounting: THT
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IXFK120N25P IXFK120N25P IXYS IXFK(X)120N25P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IXFK120N30P3 IXFK120N30P3 IXYS IXFK(X)120N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Power dissipation: 1.13kW
Gate charge: 150nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 27mΩ
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
LAA110S LAA110S IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
1+732.46 грн
50+574.47 грн
100+545.12 грн
В кошику  од. на суму  грн.
IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 250W
Gate charge: 105nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247-3
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
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IXBH20N360HV IXYS littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7 Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Collector-emitter voltage: 3.6kV
Power dissipation: 430W
Gate charge: 110nC
Pulsed collector current: 220A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 70A
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCMA140P1600TA MCMA140P1600TA IXYS MCMA140P1600TA.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1600TA-NI IXYS MCMA140P1600TA-NI.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Max. load current: 220A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
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IXTQ22N60P IXTQ22N60P IXYS IXTQ22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXFQ22N60P3 IXFQ22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IXFH12N80P IXFH12N80P IXYS IXFH12N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 360W
Gate charge: 51nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.85Ω
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IXTP15P15T IXTP15P15T IXYS IXT_15P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
2+239.34 грн
50+177.79 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC1540G CPC1540G IXYS CPC1540.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 2ms
на замовлення 965 шт:
термін постачання 14-30 дні (днів)
1+555.44 грн
50+337.98 грн
500+270.05 грн
В кошику  од. на суму  грн.
IXFH16N60P3 IXFH16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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DSA1-12D DSA1-12D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
2+365.78 грн
10+244.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN180N15P IXFN180N15P IXYS IXFN180N15P.pdf description Category: Transistor modules
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 11mΩ
Technology: HiPerFET™; PolarHT™
Drain current: 150A
Pulsed drain current: 380A
Drain-source voltage: 150V
Power dissipation: 680W
Type of semiconductor module: MOSFET transistor
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IXFN26N120P IXFN26N120P IXYS IXFN26N120P.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 23A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.5Ω
Kind of channel: enhancement
Reverse recovery time: 300ns
Pulsed drain current: 60A
Type of semiconductor module: MOSFET transistor
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+3381.43 грн
3+2772.58 грн
В кошику  од. на суму  грн.
IXTK200N10P IXTK200N10P IXYS IXTK200N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 200A
Reverse recovery time: 100ns
Gate charge: 240nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Power dissipation: 800W
Polarisation: unipolar
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+873.36 грн
3+771.56 грн
5+769.04 грн
В кошику  од. на суму  грн.
VBO25-12AO2 VBO25_ser.pdf
VBO25-12AO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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IXBH14N300HV littelfuse-discrete-igbts-ixb-14n300hv-datasheet?assetguid=6643a0d7-67d9-4a4e-8987-b0703e2c517c
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 38A
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXDD609PI IXDD609CI.pdf
IXDD609PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 328 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+122.83 грн
10+83.86 грн
50+77.16 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXDD609CI IXDD609CI.pdf
IXDD609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 654 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+230.31 грн
10+165.21 грн
50+159.34 грн
100+149.28 грн
250+145.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDD609SI IXDD609CI.pdf
IXDD609SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 645 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+200.50 грн
10+140.05 грн
25+134.18 грн
100+129.99 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDD609YI IXDD609CI.pdf
IXDD609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 857 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+229.40 грн
10+187.02 грн
50+164.38 грн
100+154.31 грн
250+151.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDD609D2TR IXDD609CI.pdf
IXDD609D2TR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Case: DFN8
Mounting: SMD
Number of channels: 1
Supply voltage: 4.5...35V
Output current: -9...9A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Turn-on time: 115ns
Kind of package: reel; tape
Turn-off time: 105ns
Kind of integrated circuit: gate driver; low-side
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+119.22 грн
10+83.03 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXDD609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDD609SITR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
PLB190 PLB190.pdf
PLB190
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+740.59 грн
10+597.12 грн
50+513.25 грн
В кошику  од. на суму  грн.
PLB190S PLB190.pdf
PLB190S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+736.98 грн
В кошику  од. на суму  грн.
PLB190STR PLB190.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CPC1965Y CPC1965G.pdf
CPC1965Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
на замовлення 228 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+826.39 грн
10+706.98 грн
25+679.31 грн
В кошику  од. на суму  грн.
CPC1945Y CPC1945Y.pdf
CPC1945Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Switched voltage: max. 120V AC
Case: SIP4
Max. operating current: 1A
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 0.34Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Kind of output: MOSFET
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+538.28 грн
В кошику  од. на суму  грн.
PD1201 PD1201.pdf
PD1201
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1190.37 грн
10+904.06 грн
25+800.07 грн
100+677.63 грн
В кошику  од. на суму  грн.
CPC1943G CPC1943.pdf
CPC1943G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1067.54 грн
В кошику  од. на суму  грн.
CPC1943GS CPC1943.pdf
CPC1943GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+845.36 грн
В кошику  од. на суму  грн.
LCA210S LCA210.pdf
LCA210S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+796.59 грн
50+484.74 грн
В кошику  од. на суму  грн.
CPC1967J CPC1967.pdf
CPC1967J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 400V AC; max. 400V DC
Case: i4-pac
Max. operating current: 1350mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LCA220 LCA220.pdf
LCA220
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 120mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 250V AC; max. 250V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 20Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+830.00 грн
10+626.47 грн
50+551.83 грн
В кошику  од. на суму  грн.
LCA210 LCA210.pdf
LCA210
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: THT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+483.19 грн
10+438.61 грн
В кошику  од. на суму  грн.
IXGH30N60C3D1 IXGH30N60C3D1.pdf
IXGH30N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 220W
Case: TO247-3
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXH30N60C3 littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 110A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 600V
Power dissipation: 270W
Gate charge: 37nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCMA35PD1600TB MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA35PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Case: TO240AA
Max. forward impulse current: 520A
Gate current: 78/200mA
Max. forward voltage: 1.22V
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1625.69 грн
3+1408.93 грн
10+1361.97 грн
36+1257.97 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCD26-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1467.64 грн
В кошику  од. на суму  грн.
MCD95-16IO1B MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD95-16IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 116A
Max. load current: 180A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Max. forward voltage: 1.28V
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2848.57 грн
5+2537.75 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD56-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 60A
Max. load current: 100A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Max. forward voltage: 1.24V
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2227.19 грн
3+1826.58 грн
10+1645.43 грн
В кошику  од. на суму  грн.
MCD72-12IO1B MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD72-12IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 133A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: TO240AA
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Max. forward voltage: 1.34V
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2788.06 грн
3+2287.00 грн
10+2053.01 грн
В кошику  од. на суму  грн.
MCD162-16io1 MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf
MCD162-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+5177.82 грн
В кошику  од. на суму  грн.
MCD162-18io1 MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD162-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Load current: 181A
Max. load current: 300A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Case: Y4-M6
Max. forward impulse current: 6kA
Gate current: 150/200mA
Max. forward voltage: 1.03V
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+4813.85 грн
В кошику  од. на суму  грн.
DSA1-18D DSA1-18D.pdf
DSA1-18D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+380.23 грн
10+241.53 грн
100+231.47 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN55N50 description 97502.pdf
IXFN55N50
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CPC1020N cpc1020n.pdf
CPC1020N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 30V AC; max. 30V DC
Case: SOP4
Max. operating current: 1.2A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
на замовлення 1625 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+704.47 грн
100+545.96 грн
500+436.10 грн
В кошику  од. на суму  грн.
CPC1020NTR CPC1020N.pdf
CPC1020NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 30V AC; max. 30V DC
Case: SOP4
Max. operating current: 1.2A
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CLA100E1200TZ-TUB Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Gate current: 40mA
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
VHFD37-16IO1 VHFD37-ser.pdf
VHFD37-16IO1
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2655.29 грн
10+2289.51 грн
В кошику  од. на суму  грн.
MG12100S-BN2MM media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: package S
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: IGBT half-bridge
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MG12150W-XN2MM littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Case: package W
Gate-emitter voltage: ±20V
Collector current: 150A
Topology: IGBT three-phase bridge; NTC thermistor
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MG12200D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: Y3-DCB
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
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MG12300D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT half-bridge
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DSEC240-04A description DSEC240-04A.pdf
DSEC240-04A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Max. forward voltage: 1V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: SOT227UI
Max. forward impulse current: 2kA
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DSA320A100NB
DSA320A100NB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.77V
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
Max. off-state voltage: 0.1kV
Load current: 80A x4
Kind of package: tube
Semiconductor structure: common anode; double x2
Case: SOT227B
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2151.33 грн
3+1766.20 грн
В кошику  од. на суму  грн.
IXFR102N30P IXFR102N30P.pdf
IXFR102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Power dissipation: 250W
Gate charge: 224nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1240.04 грн
3+1025.67 грн
В кошику  од. на суму  грн.
IXFK120N20P IXFH(K)120N20P.pdf
IXFK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 22mΩ
Reverse recovery time: 100ns
Mounting: THT
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В кошику  од. на суму  грн.
IXFK120N25P IXFK(X)120N25P.pdf
IXFK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
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IXFK120N30P3 IXFK(X)120N30P3.pdf
IXFK120N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Power dissipation: 1.13kW
Gate charge: 150nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 27mΩ
Mounting: THT
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LAA110S LAA110.pdf
LAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+732.46 грн
50+574.47 грн
100+545.12 грн
В кошику  од. на суму  грн.
IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 250W
Gate charge: 105nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247-3
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
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IXBH20N360HV littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Collector-emitter voltage: 3.6kV
Power dissipation: 430W
Gate charge: 110nC
Pulsed collector current: 220A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 70A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCMA140P1600TA MCMA140P1600TA.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA140P1600TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1600TA-NI MCMA140P1600TA-NI.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Max. load current: 220A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTQ22N60P IXTQ22N60P.pdf
IXTQ22N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXFQ22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFQ22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IXFH12N80P IXFH12N80P.pdf
IXFH12N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 360W
Gate charge: 51nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.85Ω
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IXTP15P15T IXT_15P15T.pdf
IXTP15P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+239.34 грн
50+177.79 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC1540G CPC1540.pdf
CPC1540G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Turn-off time: 2ms
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Kind of output: MOSFET
Contacts configuration: SPST-NO
Turn-on time: 2ms
на замовлення 965 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+555.44 грн
50+337.98 грн
500+270.05 грн
В кошику  од. на суму  грн.
IXFH16N60P3 IXFA(H,P)16N60P3.pdf
IXFH16N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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DSA1-12D DSA1-18D.pdf
DSA1-12D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+365.78 грн
10+244.89 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN180N15P description IXFN180N15P.pdf
IXFN180N15P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 11mΩ
Technology: HiPerFET™; PolarHT™
Drain current: 150A
Pulsed drain current: 380A
Drain-source voltage: 150V
Power dissipation: 680W
Type of semiconductor module: MOSFET transistor
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IXFN26N120P IXFN26N120P.pdf
IXFN26N120P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 23A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.5Ω
Kind of channel: enhancement
Reverse recovery time: 300ns
Pulsed drain current: 60A
Type of semiconductor module: MOSFET transistor
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3381.43 грн
3+2772.58 грн
В кошику  од. на суму  грн.
IXTK200N10P IXTK200N10P-DTE.pdf
IXTK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 200A
Reverse recovery time: 100ns
Gate charge: 240nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Power dissipation: 800W
Polarisation: unipolar
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+873.36 грн
3+771.56 грн
5+769.04 грн
В кошику  од. на суму  грн.
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