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LCA210 LCA210 IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
1+477.70 грн
10+433.63 грн
В кошику  од. на суму  грн.
IXGH30N60C3D1 IXGH30N60C3D1 IXYS IXGH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 220W
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 45ns
Gate charge: 38nC
Turn-off time: 160ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXXH30N60C3 IXYS littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Gate charge: 37nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCMA35PD1600TB MCMA35PD1600TB IXYS MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
1+1607.22 грн
3+1392.92 грн
10+1346.49 грн
36+1243.68 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08IO1B IXYS MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.27V
Load current: 27A
Max. load current: 42A
Max. forward impulse current: 520A
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1450.96 грн
В кошику  од. на суму  грн.
MCD95-16IO1B MCD95-16IO1B IXYS MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 116A
Max. load current: 180A
Max. forward impulse current: 2.25kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+2816.20 грн
5+2508.92 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08IO1B IXYS MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+2201.89 грн
3+1805.82 грн
10+1626.73 грн
В кошику  од. на суму  грн.
MCD72-12IO1B MCD72-12IO1B IXYS MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 85A
Max. load current: 133A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+2756.38 грн
3+2261.01 грн
10+2030.51 грн
В кошику  од. на суму  грн.
MCD162-16io1 MCD162-16io1 IXYS MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+5118.98 грн
В кошику  од. на суму  грн.
MCD162-18io1 MCD162-18io1 IXYS MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+4759.14 грн
В кошику  од. на суму  грн.
DSA1-18D DSA1-18D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
2+375.91 грн
10+238.79 грн
100+228.84 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN55N50 IXFN55N50 IXYS 97502.pdf description Category: Transistor drivers
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CPC1020N CPC1020N IXYS cpc1020n.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR CPC1020NTR IXYS CPC1020N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CLA100E1200TZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Load current: 100A
Max. load current: 160A
Max. off-state voltage: 1.2kV
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Kind of package: tube
Gate current: 40mA
товару немає в наявності
 Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
CPC2025NTR IXYS CPC2025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Mounting: SMT
Manufacturer series: OptoMOS
Case: SO8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
VHFD37-16IO1 VHFD37-16IO1 IXYS VHFD37-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+2625.12 грн
10+2263.50 грн
В кошику  од. на суму  грн.
MG12100S-BN2MM IXYS media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
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MG12150W-XN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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MG12200D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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DSEC240-04A DSEC240-04A IXYS DSEC240-04A.pdf description Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. forward impulse current: 2kA
Max. off-state voltage: 0.4kV
Load current: 120A x2
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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DSA320A100NB DSA320A100NB IXYS Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: tube
Max. forward voltage: 0.77V
Load current: 80A x4
Max. off-state voltage: 0.1kV
Case: SOT227B
Semiconductor structure: common anode; double x2
Type of semiconductor module: diode
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+2126.88 грн
3+1746.13 грн
В кошику  од. на суму  грн.
IXFR102N30P IXFR102N30P IXYS IXFR102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Kind of channel: enhancement
Mounting: THT
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Drain-source voltage: 300V
Power dissipation: 250W
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+1225.95 грн
3+1014.01 грн
В кошику  од. на суму  грн.
IXFK120N20P IXFK120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N25P IXFK120N25P IXYS IXFK(X)120N25P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N30P3 IXFK120N30P3 IXYS IXFK(X)120N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
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LAA110S LAA110S IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LAA110STR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 250W
Gate charge: 105nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247-3
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
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IXBH20N360HV IXYS littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7 Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Collector-emitter voltage: 3.6kV
Power dissipation: 430W
Gate charge: 110nC
Pulsed collector current: 220A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 70A
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXHX40N150V1HV IXHX40N150V1HV IXYS IXHX40N150V1HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV IXYS IXHH40N150HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
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IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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IXFH240N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
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MMJX1H40N150 IXYS MMJX1H40N150.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Case: SMPD
Mounting: SMD
Type of thyristor: thyristor
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 15.5kA
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MCMA140P1600TA MCMA140P1600TA IXYS MCMA140P1600TA.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1600TA-NI IXYS MCMA140P1600TA-NI.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Max. load current: 220A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTQ22N60P IXTQ22N60P IXYS IXTQ22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXFQ22N60P3 IXFQ22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IXFH12N80P IXFH12N80P IXYS IXFH12N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 360W
Gate charge: 51nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.85Ω
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IXTP15P15T IXTP15P15T IXYS IXT_15P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
2+236.62 грн
50+175.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC1540G CPC1540G IXYS CPC1540.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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IXFH16N60P3 IXFH16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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DSA1-12D DSA1-12D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
2+361.62 грн
10+242.10 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN180N15P IXFN180N15P IXYS IXFN180N15P.pdf description Category: Transistor drivers
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 11mΩ
Technology: HiPerFET™; PolarHT™
Drain current: 150A
Pulsed drain current: 380A
Drain-source voltage: 150V
Power dissipation: 680W
Type of semiconductor module: MOSFET transistor
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IXFN26N120P IXFN26N120P IXYS IXFN26N120P.pdf Category: Transistor drivers
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 255nC
On-state resistance: 0.5Ω
Technology: HiPerFET™; Polar™
Drain current: 23A
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Power dissipation: 695W
Type of semiconductor module: MOSFET transistor
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IXTK200N10P IXTK200N10P IXYS IXTK200N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 200A
Reverse recovery time: 100ns
Gate charge: 240nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Power dissipation: 800W
Polarisation: unipolar
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+863.43 грн
3+762.79 грн
5+760.30 грн
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IXTH3N150 IXTH3N150 IXYS IXTH3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXTQ3N150M IXTQ3N150M IXYS IXTQ3N150M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXFR48N60P IXFR48N60P IXYS IXFR48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 295 шт:
термін постачання 14-30 дні (днів)
1+1319.70 грн
3+1138.38 грн
5+1071.22 грн
10+965.09 грн
В кошику  од. на суму  грн.
IXTK170N10P IXTK170N10P IXYS IXTK170N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: Polar™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 170A
Reverse recovery time: 120ns
Gate charge: 198nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Power dissipation: 715W
Polarisation: unipolar
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
1+708.96 грн
3+594.48 грн
10+578.73 грн
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DSP45-16AR DSP45-16AR IXYS Littelfuse-Power-Semiconductors-DSP45-16AR-Datasheet?assetguid=87060760-8459-4d67-b29a-fa7c1d5c72c2 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; ISOPLUS247™
Semiconductor structure: double series
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.26V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+638.42 грн
В кошику  од. на суму  грн.
IXFP34N65X2M IXFP34N65X2M IXYS IXFP34N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Power dissipation: 40W
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
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IXFH54N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Pulsed drain current: 70A
Power dissipation: 625W
Gate charge: 49nC
Technology: HiPerFET™; X3-Class
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IXFP34N65X3 IXFP34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Power dissipation: 446W
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
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IXTP80N10T IXTP80N10T IXYS IXTA(P)80N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
2+237.51 грн
10+173.29 грн
50+149.24 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP180N10T2 IXFP180N10T2 IXYS IXFA(P)180N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
1+468.77 грн
3+390.52 грн
10+318.38 грн
50+286.05 грн
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LCA210 LCA210.pdf
LCA210
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+477.70 грн
10+433.63 грн
В кошику  од. на суму  грн.
IXGH30N60C3D1 IXGH30N60C3D1.pdf
IXGH30N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 220W
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Technology: GenX3™; PT
Turn-on time: 45ns
Gate charge: 38nC
Turn-off time: 160ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXXH30N60C3 littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Gate charge: 37nC
товару немає в наявності
Мінімальне замовлення: 300 шт
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MCMA35PD1600TB MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA35PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1607.22 грн
3+1392.92 грн
10+1346.49 грн
36+1243.68 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCD26-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.27V
Load current: 27A
Max. load current: 42A
Max. forward impulse current: 520A
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1450.96 грн
В кошику  од. на суму  грн.
MCD95-16IO1B MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD95-16IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 116A
Max. load current: 180A
Max. forward impulse current: 2.25kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2816.20 грн
5+2508.92 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD56-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 0.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2201.89 грн
3+1805.82 грн
10+1626.73 грн
В кошику  од. на суму  грн.
MCD72-12IO1B MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD72-12IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.34V
Load current: 85A
Max. load current: 133A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2756.38 грн
3+2261.01 грн
10+2030.51 грн
В кошику  од. на суму  грн.
MCD162-16io1 MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf
MCD162-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+5118.98 грн
В кошику  од. на суму  грн.
MCD162-18io1 MCD162-18IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD162-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+4759.14 грн
В кошику  од. на суму  грн.
DSA1-18D DSA1-18D.pdf
DSA1-18D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 2.3A; tube; Ifsm: 110A; FP-Case
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 2.3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward impulse current: 110A
Case: FP-Case
Max. forward voltage: 1.34V
на замовлення 414 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+375.91 грн
10+238.79 грн
100+228.84 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN55N50 description 97502.pdf
IXFN55N50
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CPC1020N cpc1020n.pdf
CPC1020N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
CPC1020NTR CPC1020N.pdf
CPC1020NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CLA100E1200TZ-TUB Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 40mA; D3PAK,TO268AA; SMD
Mounting: SMD
Load current: 100A
Max. load current: 160A
Max. off-state voltage: 1.2kV
Case: D3PAK; TO268AA
Type of thyristor: thyristor
Kind of package: tube
Gate current: 40mA
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
CPC2025NTR CPC2025N.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Mounting: SMT
Manufacturer series: OptoMOS
Case: SO8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
VHFD37-16IO1 VHFD37-ser.pdf
VHFD37-16IO1
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2625.12 грн
10+2263.50 грн
В кошику  од. на суму  грн.
MG12100S-BN2MM media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
товару немає в наявності
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MG12150W-XN2MM littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
MG12200D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
MG12300D-BN2MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
DSEC240-04A description DSEC240-04A.pdf
DSEC240-04A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. forward impulse current: 2kA
Max. off-state voltage: 0.4kV
Load current: 120A x2
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
DSA320A100NB
DSA320A100NB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: tube
Max. forward voltage: 0.77V
Load current: 80A x4
Max. off-state voltage: 0.1kV
Case: SOT227B
Semiconductor structure: common anode; double x2
Type of semiconductor module: diode
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2126.88 грн
3+1746.13 грн
В кошику  од. на суму  грн.
IXFR102N30P IXFR102N30P.pdf
IXFR102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Kind of channel: enhancement
Mounting: THT
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Drain-source voltage: 300V
Power dissipation: 250W
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1225.95 грн
3+1014.01 грн
В кошику  од. на суму  грн.
IXFK120N20P IXFH(K)120N20P.pdf
IXFK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N25P IXFK(X)120N25P.pdf
IXFK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N30P3 IXFK(X)120N30P3.pdf
IXFK120N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
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LAA110S LAA110.pdf
LAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LAA110STR LAA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 3kV
Power dissipation: 250W
Gate charge: 105nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 130A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247-3
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
товару немає в наявності
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IXBH20N360HV littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Collector-emitter voltage: 3.6kV
Power dissipation: 430W
Gate charge: 110nC
Pulsed collector current: 220A
Type of transistor: IGBT
Kind of package: tube
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 70A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXHX40N150V1HV IXHX40N150V1HV.pdf
IXHX40N150V1HV
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV.pdf
IXHH40N150HV
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
товару немає в наявності
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IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
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IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK(X)240N15T2.pdf
IXFK240N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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IXFH240N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
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MMJX1H40N150 MMJX1H40N150.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Case: SMPD
Mounting: SMD
Type of thyristor: thyristor
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 15.5kA
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MCMA140P1600TA MCMA140P1600TA.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA140P1600TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1600TA-NI MCMA140P1600TA-NI.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Max. load current: 220A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTQ22N60P IXTQ22N60P.pdf
IXTQ22N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXFQ22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFQ22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IXFH12N80P IXFH12N80P.pdf
IXFH12N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 360W
Gate charge: 51nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.85Ω
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IXTP15P15T IXT_15P15T.pdf
IXTP15P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+236.62 грн
50+175.77 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC1540G CPC1540.pdf
CPC1540G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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IXFH16N60P3 IXFA(H,P)16N60P3.pdf
IXFH16N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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DSA1-12D DSA1-18D.pdf
DSA1-12D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+361.62 грн
10+242.10 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN180N15P description IXFN180N15P.pdf
IXFN180N15P
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 11mΩ
Technology: HiPerFET™; PolarHT™
Drain current: 150A
Pulsed drain current: 380A
Drain-source voltage: 150V
Power dissipation: 680W
Type of semiconductor module: MOSFET transistor
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IXFN26N120P IXFN26N120P.pdf
IXFN26N120P
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 255nC
On-state resistance: 0.5Ω
Technology: HiPerFET™; Polar™
Drain current: 23A
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Power dissipation: 695W
Type of semiconductor module: MOSFET transistor
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IXTK200N10P IXTK200N10P-DTE.pdf
IXTK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 200A
Reverse recovery time: 100ns
Gate charge: 240nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Power dissipation: 800W
Polarisation: unipolar
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+863.43 грн
3+762.79 грн
5+760.30 грн
В кошику  од. на суму  грн.
IXTH3N150 IXTH3N150.pdf
IXTH3N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXTQ3N150M IXTQ3N150M.pdf
IXTQ3N150M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXFR48N60P IXFR48N60P.pdf
IXFR48N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 295 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1319.70 грн
3+1138.38 грн
5+1071.22 грн
10+965.09 грн
В кошику  од. на суму  грн.
IXTK170N10P IXTK170N10P-DTE.pdf
IXTK170N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: Polar™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 170A
Reverse recovery time: 120ns
Gate charge: 198nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Power dissipation: 715W
Polarisation: unipolar
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+708.96 грн
3+594.48 грн
10+578.73 грн
В кошику  од. на суму  грн.
DSP45-16AR Littelfuse-Power-Semiconductors-DSP45-16AR-Datasheet?assetguid=87060760-8459-4d67-b29a-fa7c1d5c72c2
DSP45-16AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; ISOPLUS247™
Semiconductor structure: double series
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.26V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+638.42 грн
В кошику  од. на суму  грн.
IXFP34N65X2M IXFP34N65X2M.pdf
IXFP34N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Power dissipation: 40W
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
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IXFH54N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Pulsed drain current: 70A
Power dissipation: 625W
Gate charge: 49nC
Technology: HiPerFET™; X3-Class
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IXFP34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b
IXFP34N65X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Power dissipation: 446W
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
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IXTP80N10T IXTA(P)80N10T.pdf
IXTP80N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+237.51 грн
10+173.29 грн
50+149.24 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP180N10T2 IXFA(P)180N10T2.pdf
IXFP180N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+468.77 грн
3+390.52 грн
10+318.38 грн
50+286.05 грн
В кошику  од. на суму  грн.
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