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MCD312-16io1 MCD312-16io1 IXYS MCC312-12IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-22N1 MDD312-22N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
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MCD312-14io1 MCD312-14io1 IXYS MCD312-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-18N1 MDD312-18N1 IXYS MDD312-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
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MDD312-16N1 MDD312-16N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
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MCD312-18io1 MCD312-18io1 IXYS MCD312-18IO1-DTE.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-12N1 MDD312-12N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
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MCD312-12io1 MCD312-12io1 IXYS MCD312-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-14N1 IXYS MDD312-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
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MDD312-20N1 IXYS MDD312-20N1.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
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MCD132-14io1 IXYS MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
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MCD132-08io1 IXYS MCD132-08io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
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MCD132-16io1 IXYS MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
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MCD132-12io1 IXYS MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
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MCD132-18io1 IXYS MCD132-18io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
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IXTX210P10T IXTX210P10T IXYS IXTX210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+2023.74 грн
10+1728.62 грн
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IXTR210P10T IXTR210P10T IXYS IXTR210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+2487.55 грн
3+2043.22 грн
10+1863.21 грн
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IXTN210P10T IXTN210P10T IXYS IXTN210P10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
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IXTP450P2 IXTP450P2 IXYS IXTH(P,Q)450P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
на замовлення 141 шт:
термін постачання 14-30 дні (днів)
2+371.41 грн
50+185.06 грн
100+170.76 грн
Мінімальне замовлення: 2
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IX9907N IX9907N IXYS IX9907.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
13+35.33 грн
Мінімальне замовлення: 13
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IX9908N IX9908N IXYS IX9908.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
9+52.54 грн
10+43.74 грн
25+38.69 грн
100+34.49 грн
Мінімальне замовлення: 9
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IXFB52N90P IXFB52N90P IXYS IXFB52N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFH12N90P IXFH12N90P IXYS IXFH(V)12N90P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 1Ω
Drain current: 12A
Power dissipation: 380W
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFK32N90P IXFK32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFN52N90P IXFN52N90P IXYS IXFN52N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXFX32N90P IXFX32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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CPC1025N CPC1025N IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
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CPC1025NTR CPC1025NTR IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
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IX4340UE IX4340UE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Case: MSOP8
Mounting: SMD
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Operating temperature: -40...125°C
Output current: -5...5A
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 1725 шт:
термін постачання 14-30 дні (днів)
4+121.39 грн
10+56.11 грн
25+48.79 грн
80+42.06 грн
240+41.55 грн
Мінімальне замовлення: 4
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IX4340NE IX4340NE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 881 шт:
термін постачання 14-30 дні (днів)
6+87.87 грн
10+56.44 грн
25+48.96 грн
100+40.04 грн
300+39.70 грн
Мінімальне замовлення: 6
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IX4340NETR IXYS IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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IX4340NTR IX4340NTR IXYS littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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IX4340UETR IX4340UETR IXYS littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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MCB20P1200LB-TUB MCB20P1200LB-TUB IXYS MCB20P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Kind of channel: enhancement
Case: SMPD-B
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Drain-source voltage: 1.2kV
Semiconductor structure: double series
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MCB20P1200LB-TRR IXYS MCB20P1200LB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Kind of channel: enhancement
Case: SMPD-B
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Drain-source voltage: 1.2kV
Semiconductor structure: double series
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IXFH150N25X3 IXFH150N25X3 IXYS IXFH150N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Gate charge: 154nC
Reverse recovery time: 140ns
On-state resistance: 9mΩ
Drain current: 150A
Gate-source voltage: ±20V
Power dissipation: 735W
Pulsed drain current: 300A
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1043.58 грн
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IXTQ50N25T IXTQ50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
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IXFT150N25X3HV IXYS IXFH150N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Gate charge: 154nC
Reverse recovery time: 140ns
On-state resistance: 9mΩ
Drain current: 150A
Gate-source voltage: ±20V
Power dissipation: 735W
Pulsed drain current: 300A
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IXKN75N60C IXKN75N60C IXYS IXKN75N60C-DTE.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS IXXH75N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-off time: 315ns
Turn-on time: 108ns
Collector-emitter voltage: 600V
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IXXH75N60C3D1 IXXH75N60C3D1 IXYS IXXH75N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-off time: 185ns
Turn-on time: 105ns
Collector-emitter voltage: 600V
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IXXH75N60B3 IXYS littelfuse-discrete-igbts-ixxh75n60b3-datasheet?assetguid=65b0869f-7d80-4345-86e6-e47e8d0b05bf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 160A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
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IXXH75N60C3 IXXH75N60C3 IXYS IXXH75N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-off time: 165ns
Turn-on time: 105ns
Collector-emitter voltage: 600V
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IXGN72N60C3H1 IXGN72N60C3H1 IXYS IXGN72N60C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Technology: GenX3™; PT
Collector current: 52A
Pulsed collector current: 360A
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXGH72N60C3 IXGH72N60C3 IXYS IXGH72N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Gate-emitter voltage: ±20V
Technology: GenX3™; PT
Collector current: 72A
Pulsed collector current: 360A
Collector-emitter voltage: 600V
Turn-on time: 62ns
Turn-off time: 244ns
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IXGX72N60C3H1 IXGX72N60C3H1 IXYS IXGX72N60C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Gate-emitter voltage: ±20V
Technology: GenX3™; PT
Collector current: 72A
Pulsed collector current: 360A
Collector-emitter voltage: 600V
Turn-on time: 62ns
Turn-off time: 244ns
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IXYX200N65B3 IXYX200N65B3 IXYS IXYK(x)200N65B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.56kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mounting: THT
Kind of package: tube
Gate charge: 340nC
Turn-on time: 170ns
Technology: GenX3™; XPT™
Turn-off time: 700ns
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IXYX200N65B5 IXYS Littelfuse06282024PPowerSemiconductorDiscreteIGBTIXYX200N65B5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 200A; 1.61kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.61kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 1.13kA
Mounting: THT
Kind of package: tube
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IXTX6N200P3HV IXYS IXTX6N200P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns
Power dissipation: 960W
Drain-source voltage: 2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
Features of semiconductor devices: standard power mosfet
Mounting: THT
Case: TO247PLUS-HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 143nC
Reverse recovery time: 520ns
On-state resistance: 4Ω
Drain current: 6A
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LIA135S IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Kind of output: isolation amplifier
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
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LIA135STR IXYS LIA135.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Kind of output: isolation amplifier
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
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CPC5712U CPC5712U IXYS CPC5712.pdf Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
3+193.86 грн
10+112.72 грн
25+95.89 грн
100+77.39 грн
300+66.45 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IX4310N IX4310N IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
на замовлення 1672 шт:
термін постачання 14-30 дні (днів)
4+114.14 грн
10+64.69 грн
25+54.59 грн
100+42.82 грн
300+36.00 грн
500+33.39 грн
1000+30.62 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DSEP60-12A DSEP60-12A IXYS DSEP60-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.81V
Max. forward impulse current: 0.5kA
Technology: HiPerFRED™
Kind of package: tube
Features of semiconductor devices: fast switching
Power dissipation: 330W
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
1+644.08 грн
3+550.13 грн
5+509.75 грн
10+477.79 грн
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DSEP60-12AR DSEP60-12AR IXYS Littelfuse-Power-Semiconductors-DSEP60-12AR-Datasheet?assetguid=10cd7d84-2ee7-4c08-a9c7-b27e7f1dde17 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Max. forward impulse current: 0.5kA
Technology: HiPerFRED™
Kind of package: tube
Features of semiconductor devices: fast switching
Power dissipation: 230W
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DSEP60-12AZ-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
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DSEP60-12AZ-TUB IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 60A; 80ns; D3PAK,TO268AA; Ifsm: 500A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 60A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Case: D3PAK; TO268AA
Max. forward voltage: 2.66V
Max. forward impulse current: 0.5kA
Technology: FRED
Kind of package: tube
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DSA70C150HB DSA70C150HB IXYS DSA70C150HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 35Ax2; TO247-3; Ufmax: 0.77V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.77V
Max. forward impulse current: 0.6kA
Power dissipation: 215W
Kind of package: tube
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IXTP96P085T IXTP96P085T IXYS IXT_96P085T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
2+384.09 грн
5+307.87 грн
10+286.84 грн
25+266.65 грн
Мінімальне замовлення: 2
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IXTP26P20P IXTP26P20P IXYS IXT_26P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO220AB
Drain current: -26A
на замовлення 508 шт:
термін постачання 14-30 дні (днів)
1+531.75 грн
5+386.94 грн
10+312.08 грн
50+298.62 грн
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MCD312-16io1 MCC312-12IO1.pdf
MCD312-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-22N1 MDD312-12N1-DTE.pdf
MDD312-22N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
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MCD312-14io1 MCD312-14io1.pdf
MCD312-14io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-18N1 MDD312-18N1.pdf
MDD312-18N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
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MDD312-16N1 MDD312-12N1-DTE.pdf
MDD312-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
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MCD312-18io1 MCD312-18IO1-DTE.pdf
MCD312-18io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-12N1 MDD312-12N1-DTE.pdf
MDD312-12N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
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MCD312-12io1 MCD312-12io1.pdf
MCD312-12io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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MDD312-14N1 MDD312-14N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
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MDD312-20N1 MDD312-20N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
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MCD132-14io1 MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
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MCD132-08io1 MCD132-08io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
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MCD132-16io1 MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
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MCD132-12io1 MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
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MCD132-18io1 MCD132-18io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
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IXTX210P10T IXTX210P10T.pdf
IXTX210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2023.74 грн
10+1728.62 грн
В кошику  од. на суму  грн.
IXTR210P10T IXTR210P10T.pdf
IXTR210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Technology: TrenchP™
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2487.55 грн
3+2043.22 грн
10+1863.21 грн
В кошику  од. на суму  грн.
IXTN210P10T IXTN210P10T.pdf
IXTN210P10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
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IXTP450P2 IXTH(P,Q)450P2.pdf
IXTP450P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
на замовлення 141 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+371.41 грн
50+185.06 грн
100+170.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IX9907N IX9907.pdf
IX9907N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+35.33 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IX9908N IX9908.pdf
IX9908N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+52.54 грн
10+43.74 грн
25+38.69 грн
100+34.49 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IXFB52N90P IXFB52N90P.pdf
IXFB52N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFH12N90P IXFH(V)12N90P_S.pdf
IXFH12N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 1Ω
Drain current: 12A
Power dissipation: 380W
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFK32N90P IXFK(X)32N90P.pdf
IXFK32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFN52N90P IXFN52N90P.pdf
IXFN52N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXFX32N90P IXFK(X)32N90P.pdf
IXFX32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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CPC1025N CPC1025N.pdf
CPC1025N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
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CPC1025NTR CPC1025N.pdf
CPC1025NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
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IX4340UE IX4340.pdf
IX4340UE
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Case: MSOP8
Mounting: SMD
Kind of package: tube
Kind of output: non-inverting
Number of channels: 2
Operating temperature: -40...125°C
Output current: -5...5A
Supply voltage: 5...20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 1725 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+121.39 грн
10+56.11 грн
25+48.79 грн
80+42.06 грн
240+41.55 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IX4340NE IX4340.pdf
IX4340NE
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 881 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+87.87 грн
10+56.44 грн
25+48.96 грн
100+40.04 грн
300+39.70 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4340NETR IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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IX4340NTR littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00
IX4340NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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IX4340UETR littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00
IX4340UETR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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MCB20P1200LB-TUB MCB20P1200LB.pdf
MCB20P1200LB-TUB
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Kind of channel: enhancement
Case: SMPD-B
Type of transistor: N-MOSFET
Kind of package: tube
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Drain-source voltage: 1.2kV
Semiconductor structure: double series
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MCB20P1200LB-TRR MCB20P1200LB.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Kind of channel: enhancement
Case: SMPD-B
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 62nC
On-state resistance: 98mΩ
Drain current: 25.5A
Drain-source voltage: 1.2kV
Semiconductor structure: double series
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IXFH150N25X3 IXFH150N25X3.pdf
IXFH150N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Gate charge: 154nC
Reverse recovery time: 140ns
On-state resistance: 9mΩ
Drain current: 150A
Gate-source voltage: ±20V
Power dissipation: 735W
Pulsed drain current: 300A
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1043.58 грн
В кошику  од. на суму  грн.
IXTQ50N25T IXTA(H,P,Q)50N25T.pdf
IXTQ50N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
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IXFT150N25X3HV IXFH150N25X3.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Gate charge: 154nC
Reverse recovery time: 140ns
On-state resistance: 9mΩ
Drain current: 150A
Gate-source voltage: ±20V
Power dissipation: 735W
Pulsed drain current: 300A
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IXKN75N60C IXKN75N60C-DTE.pdf
IXKN75N60C
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXXH75N60B3D1 IXXH75N60B3D1.pdf
IXXH75N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-off time: 315ns
Turn-on time: 108ns
Collector-emitter voltage: 600V
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IXXH75N60C3D1 IXXH75N60C3D1.pdf
IXXH75N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-off time: 185ns
Turn-on time: 105ns
Collector-emitter voltage: 600V
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IXXH75N60B3 littelfuse-discrete-igbts-ixxh75n60b3-datasheet?assetguid=65b0869f-7d80-4345-86e6-e47e8d0b05bf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 160A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 300A
Collector-emitter voltage: 600V
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IXXH75N60C3 IXXH75N60C3.pdf
IXXH75N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-off time: 165ns
Turn-on time: 105ns
Collector-emitter voltage: 600V
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IXGN72N60C3H1 IXGN72N60C3H1.pdf
IXGN72N60C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Technology: GenX3™; PT
Collector current: 52A
Pulsed collector current: 360A
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXGH72N60C3 IXGH72N60C3.pdf
IXGH72N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Gate-emitter voltage: ±20V
Technology: GenX3™; PT
Collector current: 72A
Pulsed collector current: 360A
Collector-emitter voltage: 600V
Turn-on time: 62ns
Turn-off time: 244ns
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IXGX72N60C3H1 IXGX72N60C3H1.pdf
IXGX72N60C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Power dissipation: 540W
Case: PLUS247™
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Gate-emitter voltage: ±20V
Technology: GenX3™; PT
Collector current: 72A
Pulsed collector current: 360A
Collector-emitter voltage: 600V
Turn-on time: 62ns
Turn-off time: 244ns
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IXYX200N65B3 IXYK(x)200N65B3.pdf
IXYX200N65B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.56kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 1.1kA
Mounting: THT
Kind of package: tube
Gate charge: 340nC
Turn-on time: 170ns
Technology: GenX3™; XPT™
Turn-off time: 700ns
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IXYX200N65B5 Littelfuse06282024PPowerSemiconductorDiscreteIGBTIXYX200N65B5Datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 200A; 1.61kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 200A
Power dissipation: 1.61kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 1.13kA
Mounting: THT
Kind of package: tube
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IXTX6N200P3HV IXTX6N200P3HV.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 2kV; 6A; 960W; 520ns
Power dissipation: 960W
Drain-source voltage: 2kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Polar3™
Features of semiconductor devices: standard power mosfet
Mounting: THT
Case: TO247PLUS-HV
Kind of package: tube
Polarisation: unipolar
Gate charge: 143nC
Reverse recovery time: 520ns
On-state resistance: 4Ω
Drain current: 6A
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LIA135S LIA135.pdf
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Kind of output: isolation amplifier
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
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LIA135STR LIA135.pdf
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Kind of output: isolation amplifier
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
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CPC5712U CPC5712.pdf
CPC5712U
Виробник: IXYS
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+193.86 грн
10+112.72 грн
25+95.89 грн
100+77.39 грн
300+66.45 грн
Мінімальне замовлення: 3
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IX4310N
IX4310N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
на замовлення 1672 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+114.14 грн
10+64.69 грн
25+54.59 грн
100+42.82 грн
300+36.00 грн
500+33.39 грн
1000+30.62 грн
Мінімальне замовлення: 4
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DSEP60-12A DSEP60-12A.pdf
DSEP60-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.81V
Max. forward impulse current: 0.5kA
Technology: HiPerFRED™
Kind of package: tube
Features of semiconductor devices: fast switching
Power dissipation: 330W
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+644.08 грн
3+550.13 грн
5+509.75 грн
10+477.79 грн
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DSEP60-12AR description Littelfuse-Power-Semiconductors-DSEP60-12AR-Datasheet?assetguid=10cd7d84-2ee7-4c08-a9c7-b27e7f1dde17
DSEP60-12AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Case: ISOPLUS247™
Max. forward voltage: 2.66V
Max. forward impulse current: 0.5kA
Technology: HiPerFRED™
Kind of package: tube
Features of semiconductor devices: fast switching
Power dissipation: 230W
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DSEP60-12AZ-TRL
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
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DSEP60-12AZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 60A; 80ns; D3PAK,TO268AA; Ifsm: 500A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 60A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Case: D3PAK; TO268AA
Max. forward voltage: 2.66V
Max. forward impulse current: 0.5kA
Technology: FRED
Kind of package: tube
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DSA70C150HB DSA70C150HB.pdf
DSA70C150HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 35Ax2; TO247-3; Ufmax: 0.77V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.77V
Max. forward impulse current: 0.6kA
Power dissipation: 215W
Kind of package: tube
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IXTP96P085T IXT_96P085T.pdf
IXTP96P085T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 55ns
на замовлення 134 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+384.09 грн
5+307.87 грн
10+286.84 грн
25+266.65 грн
Мінімальне замовлення: 2
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IXTP26P20P IXT_26P20P.pdf
IXTP26P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: -200V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Case: TO220AB
Drain current: -26A
на замовлення 508 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+531.75 грн
5+386.94 грн
10+312.08 грн
50+298.62 грн
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