| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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IXYH40N120B3 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 577W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 84ns Turn-off time: 411ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXYH40N120B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 480W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 84ns Turn-off time: 411ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXYH40N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 136A Power dissipation: 680W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 94nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| IXYH40N120B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 94nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
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IXYH40N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 480W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 95ns Turn-off time: 303ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXYH40N120C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 120A Power dissipation: 680W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 230A Mounting: THT Gate charge: 92nC Kind of package: tube Turn-off time: 140ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| IXYT40N120A4HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 600W Case: TO268HV Pulsed collector current: 275A Mounting: SMD Gate charge: 90nC Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| IXYT40N120A4HV-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 600W Case: TO268HV Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||||
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DSEI60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 52A; Ifsm: 500A; TO247-2; tube; 189W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 52A Semiconductor structure: single diode Features of semiconductor devices: fast switching Max. forward impulse current: 0.5kA Case: TO247-2 Kind of package: tube Max. forward voltage: 2V Power dissipation: 189W Reverse recovery time: 35ns Technology: FRED |
на замовлення 331 шт: термін постачання 14-30 дні (днів) |
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IXFK48N50 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 48A Power dissipation: 521W Case: TO264 On-state resistance: 0.1Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXTH32N65X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Power dissipation: 500W Case: TO247-3 On-state resistance: 135mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns Features of semiconductor devices: ultra junction x-class |
на замовлення 147 шт: термін постачання 14-30 дні (днів) |
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IXTY2N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Gate charge: 4.3nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IX4340N | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Number of channels: 2 Supply voltage: 5...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Output current: -5...5A Kind of output: non-inverting |
на замовлення 491 шт: термін постачання 14-30 дні (днів) |
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CPC1002NTR | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 700mA Switched voltage: max. 60V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 0.55Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 5ms Turn-off time: 2ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXFK102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 700W Case: TO264 Mounting: THT Kind of package: tube Gate charge: 224nC Drain current: 102A Kind of channel: enhancement Drain-source voltage: 300V On-state resistance: 33mΩ |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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IXDN602PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Turn-on time: 93ns Turn-off time: 93ns Kind of output: non-inverting |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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IXDN604PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Turn-on time: 81ns Turn-off time: 79ns Kind of output: non-inverting |
на замовлення 1012 шт: термін постачання 14-30 дні (днів) |
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IXDI614PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Turn-on time: 140ns Turn-off time: 130ns Kind of output: inverting |
на замовлення 472 шт: термін постачання 14-30 дні (днів) |
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| IXKC19N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 430ns Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CPC2317N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA Kind of output: MOSFET |
на замовлення 581 шт: термін постачання 14-30 дні (днів) |
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CPC1018NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.6A Switched voltage: max. 60V DC; max. 600V AC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.8Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IXFL44N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Case: ISOPLUS264™ On-state resistance: 0.24Ω Power dissipation: 357W Gate charge: 305nC Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 1kV |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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DSS25-0045A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V Max. forward impulse current: 0.4kA Max. forward voltage: 0.59V Power dissipation: 135W Max. off-state voltage: 45V Load current: 25A Kind of package: tube Semiconductor structure: single diode Case: TO220AC Type of diode: Schottky rectifying Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DSS25-0025B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V Max. forward impulse current: 330A Max. forward voltage: 0.44V Power dissipation: 90W Max. off-state voltage: 25V Load current: 25A Kind of package: tube Semiconductor structure: single diode Case: TO220AC Type of diode: Schottky rectifying Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCD312-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Mechanical mounting: screw Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V Max. forward impulse current: 9.6kA |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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MDD312-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2.2kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||
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MCD312-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.4kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MDD312-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.8kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MDD312-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.6kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCD312-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.8kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MDD312-12N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.2kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCD312-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.2kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MDD312-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.4kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MDD312-20N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.4kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 0.8kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.6kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.2kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD132-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.8kV Max. forward impulse current: 4.75kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXTX210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Case: PLUS247™ Mounting: THT Power dissipation: 1.04kW Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -210A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube On-state resistance: 7.5mΩ Reverse recovery time: 200ns |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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IXTR210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Case: ISOPLUS247™ Mounting: THT Power dissipation: 390W Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -195A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube On-state resistance: 8mΩ Reverse recovery time: 200ns |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXTN210P10T | IXYS |
Category: Transistor modules Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: -100V Drain current: -210A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 7.5mΩ Pulsed drain current: -800A Power dissipation: 830W Technology: TrenchP™ Kind of channel: enhancement Gate charge: 740nC Reverse recovery time: 200ns Gate-source voltage: ±15V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IX9907N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: tube Case: SO8 Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Operating voltage: 650V DC Mounting: SMD Output current: 1.7A |
на замовлення 486 шт: термін постачання 14-30 дні (днів) |
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IX9908N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: tube Case: SO8 Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Operating voltage: 650V DC Mounting: SMD Output current: 1.7A |
на замовлення 198 шт: термін постачання 14-30 дні (днів) |
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IXFB52N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Mounting: THT Gate charge: 308nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 52A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: PLUS264™ On-state resistance: 0.16Ω Reverse recovery time: 300ns Power dissipation: 1.25kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFH12N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Mounting: THT Gate charge: 56nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 12A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 1Ω Power dissipation: 380W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFK32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264 Mounting: THT Gate charge: 215nC Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 0.3Ω Power dissipation: 960W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFN52N90P | IXYS |
Category: Transistor modules Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Gate charge: 308nC Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 43A Kind of channel: enhancement Drain-source voltage: 900V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 0.16Ω Reverse recovery time: 300ns Pulsed drain current: 104A Type of semiconductor module: MOSFET transistor Power dissipation: 890W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFX32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™ Mounting: THT Gate charge: 215nC Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 0.3Ω Power dissipation: 960W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
CPC1025N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CPC1025NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Kind of output: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IX4340UE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Mounting: SMD Supply voltage: 5...20V Output current: -5...5A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Kind of package: tube Case: MSOP8 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 |
на замовлення 1675 шт: термін постачання 14-30 дні (днів) |
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IX4340NE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 5...20V Kind of output: non-inverting |
на замовлення 871 шт: термін постачання 14-30 дні (днів) |
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| IX4340NETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 5...20V Kind of output: non-inverting |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
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IX4340NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -5...5A Number of channels: 2 Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 5...20V Kind of output: non-inverting |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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IX4340UETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 5...20V Kind of output: non-inverting |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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IXTQ50N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO3P On-state resistance: 50mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 166ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXKN75N60C | IXYS |
Category: Transistor modules Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A Power dissipation: 560W Case: SOT227B Drain current: 50A Kind of channel: enhancement Drain-source voltage: 600V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±20V Semiconductor structure: single transistor On-state resistance: 36mΩ Reverse recovery time: 580ns Pulsed drain current: 250A Type of semiconductor module: MOSFET transistor Gate charge: 500nC Polarisation: unipolar Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXXH75N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 105ns Turn-off time: 185ns Gate charge: 107nC Technology: GenX3™; Planar; XPT™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXXH75N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 105ns Turn-off time: 165ns Gate charge: 107nC Technology: GenX3™; Planar; XPT™ |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYH40N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
товару немає в наявності
В кошику
од. на суму грн.
| IXYH40N120B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
товару немає в наявності
В кошику
од. на суму грн.
| IXYH40N120B4 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 136A
Power dissipation: 680W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 136A; 680W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 136A
Power dissipation: 680W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYH40N120B4H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 94nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYH40N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
товару немає в наявності
В кошику
од. на суму грн.
| IXYH40N120C4 |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 680W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-off time: 140ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 120A; 680W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 680W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-off time: 140ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYT40N120A4HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 600W
Case: TO268HV
Pulsed collector current: 275A
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 600W
Case: TO268HV
Pulsed collector current: 275A
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXYT40N120A4HV-TRL |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| DSEI60-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; Ifsm: 500A; TO247-2; tube; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; Ifsm: 500A; TO247-2; tube; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 331 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 770.75 грн |
| 3+ | 467.69 грн |
| 6+ | 441.95 грн |
| 30+ | 424.78 грн |
| IXFK48N50 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTH32N65X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
на замовлення 147 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 621.03 грн |
| 3+ | 392.17 грн |
| 7+ | 371.58 грн |
| IXTY2N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
товару немає в наявності
В кошику
од. на суму грн.
| IX4340N |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Output current: -5...5A
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 5...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Output current: -5...5A
Kind of output: non-inverting
на замовлення 491 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 105.35 грн |
| 10+ | 60.59 грн |
| 50+ | 50.29 грн |
| 100+ | 46.17 грн |
| 300+ | 39.65 грн |
| CPC1002NTR |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 700mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.55Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 5ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 700mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.55Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 5ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXFK102N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 224nC
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 300V
On-state resistance: 33mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 224nC
Drain current: 102A
Kind of channel: enhancement
Drain-source voltage: 300V
On-state resistance: 33mΩ
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1251.31 грн |
| 2+ | 883.89 грн |
| 4+ | 835.83 грн |
| IXDN602PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 93ns
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 93ns
Kind of output: non-inverting
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.11 грн |
| 10+ | 66.08 грн |
| 25+ | 60.07 грн |
| 50+ | 58.35 грн |
| IXDN604PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 79ns
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 79ns
Kind of output: non-inverting
на замовлення 1012 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.96 грн |
| 10+ | 108.98 грн |
| 50+ | 89.25 грн |
| IXDI614PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 130ns
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 130ns
Kind of output: inverting
на замовлення 472 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 188.53 грн |
| 10+ | 139.02 грн |
| 25+ | 127.01 грн |
| 50+ | 121.00 грн |
| 100+ | 119.28 грн |
| IXKC19N60C5 |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
Technology: CoolMOS™
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В кошику
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| CPC2317N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
на замовлення 581 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.99 грн |
| 10+ | 212.82 грн |
| 50+ | 199.09 грн |
| CPC1018NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IXFL44N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Power dissipation: 357W
Gate charge: 305nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 1kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Power dissipation: 357W
Gate charge: 305nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 1kV
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1021.19 грн |
| DSS25-0045A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.59V
Power dissipation: 135W
Max. off-state voltage: 45V
Load current: 25A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Max. forward impulse current: 0.4kA
Max. forward voltage: 0.59V
Power dissipation: 135W
Max. off-state voltage: 45V
Load current: 25A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 8000 шт
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од. на суму грн.
| DSS25-0025B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Max. forward impulse current: 330A
Max. forward voltage: 0.44V
Power dissipation: 90W
Max. off-state voltage: 25V
Load current: 25A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Max. forward impulse current: 330A
Max. forward voltage: 0.44V
Power dissipation: 90W
Max. off-state voltage: 25V
Load current: 25A
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
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| MCD312-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.6kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.6kA
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15133.08 грн |
| MDD312-22N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
товару немає в наявності
Мінімальне замовлення: 3 шт
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од. на суму грн.
| MCD312-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
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| MDD312-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MDD312-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MCD312-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
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| MDD312-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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В кошику
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| MCD312-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
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| MDD312-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MDD312-20N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
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| MCD132-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
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| MCD132-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
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| MCD132-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
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| MCD132-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
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| MCD132-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
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| IXTX210P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2064.57 грн |
| 10+ | 1737.75 грн |
| IXTR210P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 390W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -195A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 8mΩ
Reverse recovery time: 200ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 390W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -195A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 8mΩ
Reverse recovery time: 200ns
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2537.74 грн |
| 3+ | 2084.44 грн |
| 10+ | 1873.33 грн |
| IXTN210P10T |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -100V
Drain current: -210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: -800A
Power dissipation: 830W
Technology: TrenchP™
Kind of channel: enhancement
Gate charge: 740nC
Reverse recovery time: 200ns
Gate-source voltage: ±15V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -100V
Drain current: -210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: -800A
Power dissipation: 830W
Technology: TrenchP™
Kind of channel: enhancement
Gate charge: 740nC
Reverse recovery time: 200ns
Gate-source voltage: ±15V
Mechanical mounting: screw
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| IX9907N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Operating voltage: 650V DC
Mounting: SMD
Output current: 1.7A
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Operating voltage: 650V DC
Mounting: SMD
Output current: 1.7A
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.04 грн |
| IX9908N |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Operating voltage: 650V DC
Mounting: SMD
Output current: 1.7A
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Operating voltage: 650V DC
Mounting: SMD
Output current: 1.7A
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.60 грн |
| 10+ | 44.62 грн |
| 25+ | 39.47 грн |
| 100+ | 35.18 грн |
| IXFB52N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Mounting: THT
Gate charge: 308nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Power dissipation: 1.25kW
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Mounting: THT
Gate charge: 308nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Power dissipation: 1.25kW
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| IXFH12N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Mounting: THT
Gate charge: 56nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Power dissipation: 380W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Mounting: THT
Gate charge: 56nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Power dissipation: 380W
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| IXFK32N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Mounting: THT
Gate charge: 215nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.3Ω
Power dissipation: 960W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Mounting: THT
Gate charge: 215nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.3Ω
Power dissipation: 960W
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| IXFN52N90P |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Gate charge: 308nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Category: Transistor modules
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Gate charge: 308nC
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
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| IXFX32N90P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Mounting: THT
Gate charge: 215nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 0.3Ω
Power dissipation: 960W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Mounting: THT
Gate charge: 215nC
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 0.3Ω
Power dissipation: 960W
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| CPC1025N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
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| CPC1025NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.
| IX4340UE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Mounting: SMD
Supply voltage: 5...20V
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of package: tube
Case: MSOP8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Mounting: SMD
Supply voltage: 5...20V
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of package: tube
Case: MSOP8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
на замовлення 1675 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.17 грн |
| 10+ | 55.69 грн |
| 21+ | 46.60 грн |
| 58+ | 44.11 грн |
| 240+ | 42.74 грн |
| 560+ | 42.39 грн |
| IX4340NE |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
на замовлення 871 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 89.64 грн |
| 10+ | 57.58 грн |
| 25+ | 49.94 грн |
| 100+ | 40.85 грн |
| 300+ | 40.50 грн |
| IX4340NETR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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Мінімальне замовлення: 4000 шт
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| IX4340NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
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Мінімальне замовлення: 4000 шт
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од. на суму грн.
| IX4340UETR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| IXTQ50N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
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Мінімальне замовлення: 300 шт
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| IXKN75N60C |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Power dissipation: 560W
Case: SOT227B
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±20V
Semiconductor structure: single transistor
On-state resistance: 36mΩ
Reverse recovery time: 580ns
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Gate charge: 500nC
Polarisation: unipolar
Technology: CoolMOS™
Category: Transistor modules
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Power dissipation: 560W
Case: SOT227B
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 600V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±20V
Semiconductor structure: single transistor
On-state resistance: 36mΩ
Reverse recovery time: 580ns
Pulsed drain current: 250A
Type of semiconductor module: MOSFET transistor
Gate charge: 500nC
Polarisation: unipolar
Technology: CoolMOS™
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| IXXH75N60C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 105ns
Turn-off time: 185ns
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 105ns
Turn-off time: 185ns
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
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| IXXH75N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 105ns
Turn-off time: 165ns
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 105ns
Turn-off time: 165ns
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
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