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DSA320A100NB DSA320A100NB IXYS Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: tube
Max. forward voltage: 0.77V
Load current: 80A x4
Max. off-state voltage: 0.1kV
Case: SOT227B
Semiconductor structure: common anode; double x2
Type of semiconductor module: diode
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+2171.50 грн
3+1782.75 грн
В кошику  од. на суму  грн.
IXFR102N30P IXFR102N30P IXYS IXFR102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+1251.67 грн
3+1035.28 грн
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IXFK120N20P IXFK120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N25P IXFK120N25P IXYS IXFK(X)120N25P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N30P3 IXFK120N30P3 IXYS IXFK(X)120N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
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LAA110S LAA110S IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LAA110STR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
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IXBH20N360HV IXYS littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7 Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 110nC
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 220A
Power dissipation: 430W
Collector-emitter voltage: 3.6kV
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DHG55I3300FE IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Semiconductor structure: single diode
Max. forward voltage: 3.4V
Type of diode: rectifying
Load current: 50A
Case: ISOPLUS i4-pac™ x024e
Max. forward impulse current: 0.6kA
Technology: Sonic FRD™
Max. off-state voltage: 3.3kV
Mounting: THT
Kind of package: tube
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MDD142-14N1 IXYS MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.7kA
Max. load current: 300A
Semiconductor structure: double series
Electrical mounting: screw
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+5085.97 грн
3+4253.72 грн
В кошику  од. на суму  грн.
IXHX40N150V1HV IXHX40N150V1HV IXYS IXHX40N150V1HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV IXYS IXHH40N150HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
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IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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IXFH240N15X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
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MMJX1H40N150 IXYS MMJX1H40N150.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Case: SMPD
Mounting: SMD
Type of thyristor: thyristor
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 15.5kA
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MCMA140P1600TA MCMA140P1600TA IXYS MCMA140P1600TA.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1600TA-NI IXYS MCMA140P1600TA-NI.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Max. load current: 220A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTQ22N60P IXTQ22N60P IXYS IXTQ22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXFQ22N60P3 IXFQ22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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MEK75-12DA IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 75A; TO240AA; bulk
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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IXFH12N80P IXFH12N80P IXYS IXFH12N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
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IXTP15P15T IXTP15P15T IXYS IXT_15P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
2+241.58 грн
50+179.46 грн
Мінімальне замовлення: 2
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CPC1540G CPC1540G IXYS CPC1540.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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IXFH16N60P3 IXFH16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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DSA1-12D DSA1-12D IXYS DSA1-18D.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
2+369.21 грн
10+247.18 грн
Мінімальне замовлення: 2
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IXFN180N15P IXFN180N15P IXYS IXFN180N15P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 11mΩ
Technology: HiPerFET™; PolarHT™
Drain current: 150A
Pulsed drain current: 380A
Drain-source voltage: 150V
Power dissipation: 680W
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1868.84 грн
В кошику  од. на суму  грн.
IXFN26N120P IXFN26N120P IXYS IXFN26N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 255nC
On-state resistance: 0.5Ω
Technology: HiPerFET™; Polar™
Drain current: 23A
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Power dissipation: 695W
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+3413.13 грн
3+2798.57 грн
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IXTK200N10P IXTK200N10P IXYS IXTK200N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 200A
Reverse recovery time: 100ns
Gate charge: 240nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Power dissipation: 800W
Polarisation: unipolar
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+881.54 грн
3+778.79 грн
5+776.25 грн
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IXTK200N10L2 IXTK200N10L2 IXYS IXT_200N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 245ns
Gate charge: 540nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: Linear L2™
Type of transistor: N-MOSFET
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IXTH3N150 IXTH3N150 IXYS IXTH3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXTQ3N150M IXTQ3N150M IXYS IXTQ3N150M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXFR48N60P IXFR48N60P IXYS IXFR48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 295 шт:
термін постачання 14-30 дні (днів)
1+1347.39 грн
3+1162.26 грн
5+1093.69 грн
10+985.34 грн
В кошику  од. на суму  грн.
IXTK170N10P IXTK170N10P IXYS IXTK170N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: Polar™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 170A
Reverse recovery time: 120ns
Gate charge: 198nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Power dissipation: 715W
Polarisation: unipolar
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
1+723.83 грн
3+606.95 грн
10+590.87 грн
В кошику  од. на суму  грн.
IXFK170N20T IXFK170N20T IXYS IXFK(X)170N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTK170P10P IXTK170P10P IXYS IXTK170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -170A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 176ns
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IXFK170N25X3 IXFK170N25X3 IXYS IXFH(K,T)170N25X3_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXFK170N10P IXFK170N10P IXYS IXFH170N10P_IXFK170N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
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IXFK170N20P IXFK170N20P IXYS IXF_170N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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CPC5602CTR CPC5602CTR IXYS CPC5602.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Drain current: 0.13A
Power dissipation: 2.5W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 350V
Polarisation: unipolar
на замовлення 531 шт:
термін постачання 14-30 дні (днів)
6+86.60 грн
10+48.34 грн
100+33.86 грн
250+29.63 грн
500+27.85 грн
Мінімальне замовлення: 6
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DSP45-16AR DSP45-16AR IXYS Littelfuse-Power-Semiconductors-DSP45-16AR-Datasheet?assetguid=87060760-8459-4d67-b29a-fa7c1d5c72c2 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; ISOPLUS247™
Semiconductor structure: double series
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.26V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+651.81 грн
В кошику  од. на суму  грн.
IXFP34N65X2M IXFP34N65X2M IXYS IXFP34N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Power dissipation: 40W
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IXFH54N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Gate charge: 49nC
Technology: HiPerFET™; X3-Class
Pulsed drain current: 70A
Power dissipation: 625W
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IXFP34N65X3 IXFP34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Pulsed drain current: 48A
Power dissipation: 446W
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IXTP80N10T IXTP80N10T IXYS IXTA(P)80N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
2+242.49 грн
10+176.92 грн
50+152.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP180N10T2 IXFP180N10T2 IXYS IXFA(P)180N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
1+478.60 грн
3+398.71 грн
10+325.06 грн
50+292.05 грн
В кошику  од. на суму  грн.
IXFA180N10T2 IXFA180N10T2 IXYS IXFA(P)180N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
2+451.26 грн
10+314.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA180N10T IXTA180N10T IXYS IXTA(P)180N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
2+447.61 грн
10+351.30 грн
25+280.20 грн
50+256.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA80N10T IXTA80N10T IXYS IXTA(P)80N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTP180N10T IXTP180N10T IXYS IXTA(P)180N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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CPC1004N CPC1004N IXYS CPC1004N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Manufacturer series: OptoMOS
Operating temperature: -40...110°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 4Ω
Switched voltage: max. 100V DC
Insulation voltage: 1.5kV
Relay variant: current source
Case: SOP4
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
3+220.61 грн
10+187.08 грн
25+171.00 грн
50+163.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1004NTR CPC1004NTR IXYS CPC1004N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Operating temperature: -40...110°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
Manufacturer series: OptoMOS
On-state resistance: 4Ω
Relay variant: current source
Switched voltage: max. 100V DC
Insulation voltage: 1.5kV
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IXDD604SIA IXDD604SIA IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 524 шт:
термін постачання 14-30 дні (днів)
4+124.89 грн
10+99.89 грн
25+85.50 грн
50+77.03 грн
Мінімальне замовлення: 4
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IXDD604SIATR IXDD604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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LCA710S LCA710S IXYS littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
1+931.68 грн
10+797.41 грн
50+752.55 грн
В кошику  од. на суму  грн.
LCA710 LCA710 IXYS littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCA710R LCA710R IXYS LCA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCA710STR IXYS LCA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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DSA320A100NB
DSA320A100NB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: tube
Max. forward voltage: 0.77V
Load current: 80A x4
Max. off-state voltage: 0.1kV
Case: SOT227B
Semiconductor structure: common anode; double x2
Type of semiconductor module: diode
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2171.50 грн
3+1782.75 грн
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IXFR102N30P IXFR102N30P.pdf
IXFR102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1251.67 грн
3+1035.28 грн
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IXFK120N20P IXFH(K)120N20P.pdf
IXFK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N25P IXFK(X)120N25P.pdf
IXFK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N30P3 IXFK(X)120N30P3.pdf
IXFK120N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
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LAA110S LAA110.pdf
LAA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LAA110STR LAA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
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IXBH20N360HV littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 110nC
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 220A
Power dissipation: 430W
Collector-emitter voltage: 3.6kV
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DHG55I3300FE
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Semiconductor structure: single diode
Max. forward voltage: 3.4V
Type of diode: rectifying
Load current: 50A
Case: ISOPLUS i4-pac™ x024e
Max. forward impulse current: 0.6kA
Technology: Sonic FRD™
Max. off-state voltage: 3.3kV
Mounting: THT
Kind of package: tube
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MDD142-14N1 MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.7kA
Max. load current: 300A
Semiconductor structure: double series
Electrical mounting: screw
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+5085.97 грн
3+4253.72 грн
В кошику  од. на суму  грн.
IXHX40N150V1HV IXHX40N150V1HV.pdf
IXHX40N150V1HV
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV.pdf
IXHH40N150HV
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
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IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK(X)240N15T2.pdf
IXFK240N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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IXFH240N15X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_240n15x3_datasheet.pdf?assetguid=db0daa8a-a090-4544-9e9a-0eaae950088b
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 240A; Idm: 420A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Pulsed drain current: 420A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 97ns
Technology: HiPerFET™; X3-Class
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MMJX1H40N150 MMJX1H40N150.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 15.5kA
Case: SMPD
Mounting: SMD
Type of thyristor: thyristor
Features of semiconductor devices: Kelvin terminal; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 15.5kA
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MCMA140P1600TA MCMA140P1600TA.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA140P1600TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCMA140P1600TA-NI MCMA140P1600TA-NI.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Max. load current: 220A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTQ22N60P IXTQ22N60P.pdf
IXTQ22N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXFQ22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFQ22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO3P
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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MEK75-12DA PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf MEx75-12DA.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.2kV; If: 75A; TO240AA; bulk
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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IXFH12N80P IXFH12N80P.pdf
IXFH12N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
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IXTP15P15T IXT_15P15T.pdf
IXTP15P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Gate charge: 48nC
Reverse recovery time: 116ns
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+241.58 грн
50+179.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1540G CPC1540.pdf
CPC1540G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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IXFH16N60P3 IXFA(H,P)16N60P3.pdf
IXFH16N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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DSA1-12D DSA1-18D.pdf
DSA1-12D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+369.21 грн
10+247.18 грн
Мінімальне замовлення: 2
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IXFN180N15P description IXFN180N15P.pdf
IXFN180N15P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 150A; SOT227B; screw; Idm: 380A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 11mΩ
Technology: HiPerFET™; PolarHT™
Drain current: 150A
Pulsed drain current: 380A
Drain-source voltage: 150V
Power dissipation: 680W
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1868.84 грн
В кошику  од. на суму  грн.
IXFN26N120P IXFN26N120P.pdf
IXFN26N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 255nC
On-state resistance: 0.5Ω
Technology: HiPerFET™; Polar™
Drain current: 23A
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Power dissipation: 695W
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+3413.13 грн
3+2798.57 грн
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IXTK200N10P IXTK200N10P-DTE.pdf
IXTK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 200A
Reverse recovery time: 100ns
Gate charge: 240nC
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Power dissipation: 800W
Polarisation: unipolar
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+881.54 грн
3+778.79 грн
5+776.25 грн
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IXTK200N10L2 IXT_200N10L2.pdf
IXTK200N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 245ns
Gate charge: 540nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: Linear L2™
Type of transistor: N-MOSFET
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IXTH3N150 IXTH3N150.pdf
IXTH3N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXTQ3N150M IXTQ3N150M.pdf
IXTQ3N150M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 1.83A; Idm: 9A; 73W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.83A
Pulsed drain current: 9A
Power dissipation: 73W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 7.3Ω
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
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IXFR48N60P IXFR48N60P.pdf
IXFR48N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 295 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1347.39 грн
3+1162.26 грн
5+1093.69 грн
10+985.34 грн
В кошику  од. на суму  грн.
IXTK170N10P IXTK170N10P-DTE.pdf
IXTK170N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: Polar™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 170A
Reverse recovery time: 120ns
Gate charge: 198nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Power dissipation: 715W
Polarisation: unipolar
на замовлення 317 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+723.83 грн
3+606.95 грн
10+590.87 грн
В кошику  од. на суму  грн.
IXFK170N20T IXFK(X)170N20T.pdf
IXFK170N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXTK170P10P IXTK170P10P.pdf
IXTK170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -170A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 176ns
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IXFK170N25X3 IXFH(K,T)170N25X3_HV.pdf
IXFK170N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Features of semiconductor devices: ultra junction x-class
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IXFK170N10P IXFH170N10P_IXFK170N10P.pdf
IXFK170N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Power dissipation: 715W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
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IXFK170N20P IXF_170N20P.pdf
IXFK170N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 170A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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CPC5602CTR CPC5602.pdf
CPC5602CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 2.5W; SOT223
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Drain current: 0.13A
Power dissipation: 2.5W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 350V
Polarisation: unipolar
на замовлення 531 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+86.60 грн
10+48.34 грн
100+33.86 грн
250+29.63 грн
500+27.85 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DSP45-16AR Littelfuse-Power-Semiconductors-DSP45-16AR-Datasheet?assetguid=87060760-8459-4d67-b29a-fa7c1d5c72c2
DSP45-16AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; ISOPLUS247™
Semiconductor structure: double series
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.26V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+651.81 грн
В кошику  од. на суму  грн.
IXFP34N65X2M IXFP34N65X2M.pdf
IXFP34N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 40W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Power dissipation: 40W
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IXFH54N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Gate charge: 49nC
Technology: HiPerFET™; X3-Class
Pulsed drain current: 70A
Power dissipation: 625W
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IXFP34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b
IXFP34N65X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Pulsed drain current: 48A
Power dissipation: 446W
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IXTP80N10T IXTA(P)80N10T.pdf
IXTP80N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+242.49 грн
10+176.92 грн
50+152.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP180N10T2 IXFA(P)180N10T2.pdf
IXFP180N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+478.60 грн
3+398.71 грн
10+325.06 грн
50+292.05 грн
В кошику  од. на суму  грн.
IXFA180N10T2 IXFA(P)180N10T2.pdf
IXFA180N10T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 132 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+451.26 грн
10+314.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA180N10T IXTA(P)180N10T.pdf
IXTA180N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+447.61 грн
10+351.30 грн
25+280.20 грн
50+256.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA80N10T IXTA(P)80N10T.pdf
IXTA80N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXTP180N10T IXTA(P)180N10T.pdf
IXTP180N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
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CPC1004N CPC1004N.pdf
CPC1004N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Manufacturer series: OptoMOS
Operating temperature: -40...110°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 4Ω
Switched voltage: max. 100V DC
Insulation voltage: 1.5kV
Relay variant: current source
Case: SOP4
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+220.61 грн
10+187.08 грн
25+171.00 грн
50+163.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1004NTR CPC1004N.pdf
CPC1004NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Operating temperature: -40...110°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 300mA
Manufacturer series: OptoMOS
On-state resistance: 4Ω
Relay variant: current source
Switched voltage: max. 100V DC
Insulation voltage: 1.5kV
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IXDD604SIA IXDD604PI.pdf
IXDD604SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 524 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+124.89 грн
10+99.89 грн
25+85.50 грн
50+77.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDD604SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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LCA710S littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467
LCA710S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+931.68 грн
10+797.41 грн
50+752.55 грн
В кошику  од. на суму  грн.
LCA710 littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467
LCA710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCA710R LCA710.pdf
LCA710R
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LCA710STR LCA710.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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