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IXFX27N80Q IXFX27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
1+1591.99 грн
2+1463.75 грн
10+1407.35 грн
В кошику  од. на суму  грн.
IXYA50N65C3 IXYA50N65C3 IXYS IXY_50N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 145ns
Gate charge: 86nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH50N65C3 IXYH50N65C3 IXYS IXY_50N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXGX320N60B3 IXGX320N60B3 IXYS IXGK(x)320N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 585nC
Pulsed collector current: 1.2kA
Turn-on time: 107ns
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 320A
Collector-emitter voltage: 600V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1776.95 грн
В кошику  од. на суму  грн.
IXFA34N65X2 IXFA34N65X2 IXYS IXFA34N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXFH34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Gate charge: 56nC
на замовлення 153 шт:
термін постачання 14-30 дні (днів)
1+510.72 грн
3+371.71 грн
8+352.05 грн
120+338.38 грн
В кошику  од. на суму  грн.
IXTH34N65X2 IXTH34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXTP24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+546.61 грн
4+276.00 грн
10+261.48 грн
В кошику  од. на суму  грн.
IXTP90N055T2 IXTP90N055T2 IXYS IXTA(I,P,Y)90N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Mounting: THT
Power dissipation: 150W
Gate charge: 42nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
на замовлення 290 шт:
термін постачання 14-30 дні (днів)
2+282.51 грн
10+105.10 грн
26+99.12 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTR90P20P IXTR90P20P IXYS IXTR90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Power dissipation: 312W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -53A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 48mΩ
Reverse recovery time: 315ns
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
1+656.12 грн
В кошику  од. на суму  грн.
IXTA05N100HV IXTA05N100HV IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
на замовлення 282 шт:
термін постачання 14-30 дні (днів)
2+397.54 грн
3+337.53 грн
5+211.06 грн
13+199.95 грн
250+197.39 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 128ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Technology: HiPerFET™; X3-Class
Drain current: 160A
Pulsed drain current: 500A
Drain-source voltage: 200V
Power dissipation: 390W
Type of semiconductor module: MOSFET transistor
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В кошику  од. на суму  грн.
IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+2631.84 грн
В кошику  од. на суму  грн.
IXTP24N65X2M IXTP24N65X2M IXYS IXTP24N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
1+484.04 грн
5+209.35 грн
13+197.39 грн
В кошику  од. на суму  грн.
IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
на замовлення 204 шт:
термін постачання 14-30 дні (днів)
2+455.51 грн
4+289.67 грн
10+274.29 грн
30+263.18 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1255.19 грн
В кошику  од. на суму  грн.
IXFL82N60P IXFL82N60P IXYS IXFL82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Power dissipation: 625W
Kind of package: tube
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+919.30 грн
В кошику  од. на суму  грн.
IXFN50N120SK IXFN50N120SK IXYS IXFN50N120SK.pdf Category: Transistor modules
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
1+7190.64 грн
3+5902.85 грн
В кошику  од. на суму  грн.
IXTQ34N65X2M IXTQ34N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 54nC
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
1+720.54 грн
2+494.75 грн
6+468.26 грн
В кошику  од. на суму  грн.
IXFB82N60Q3 IXFB82N60Q3 IXYS IXFB82N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhancement
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of package: tube
Reverse recovery time: 300ns
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
1+1011.33 грн
В кошику  од. на суму  грн.
IXFN66N85X IXFN66N85X IXYS IXFN66N85X.pdf Category: Transistor modules
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 230nC
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+3676.30 грн
В кошику  од. на суму  грн.
IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
1+622.07 грн
5+538.33 грн
10+498.17 грн
В кошику  од. на суму  грн.
IXFN40N110P IXFN40N110P IXYS IXFN40N110P.pdf Category: Transistor modules
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 310nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+2089.83 грн
В кошику  од. на суму  грн.
IXFN40N110Q3 IXFN40N110Q3 IXYS IXFN40N110Q3.pdf Category: Transistor modules
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 300nC
Reverse recovery time: 434ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1887.38 грн
В кошику  од. на суму  грн.
IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+888.94 грн
2+530.64 грн
6+501.59 грн
В кошику  од. на суму  грн.
IXFK64N60P3 IXFK64N60P3 IXYS IXF_64N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
1+1511.93 грн
2+845.95 грн
4+799.81 грн
100+770.75 грн
В кошику  од. на суму  грн.
IXFH28N60P3 IXFH28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 695W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.26Ω
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
1+745.38 грн
3+425.54 грн
7+402.47 грн
60+386.23 грн
В кошику  од. на суму  грн.
IXFB82N60P IXFB82N60P IXYS IXFB82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of package: tube
Reverse recovery time: 200ns
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
1+1975.72 грн
2+1734.62 грн
5+1733.77 грн
25+1667.12 грн
В кошику  од. на суму  грн.
IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 650W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.19Ω
Gate charge: 102nC
Polarisation: unipolar
на замовлення 266 шт:
термін постачання 14-30 дні (днів)
1+1119.91 грн
2+635.74 грн
5+600.71 грн
В кошику  од. на суму  грн.
IXFN180N25T IXFN180N25T IXYS IXFN180N25T.pdf Category: Transistor modules
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhancement
Gate charge: 364nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
1+1871.74 грн
2+1643.19 грн
20+1625.25 грн
В кошику  од. на суму  грн.
IXFA34N65X3 IXFA34N65X3 IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Gate charge: 29nC
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IXKH47N60C IXKH47N60C IXYS IXKH47N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
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IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Mounting: THT
Power dissipation: 350W
Gate charge: 50nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.27Ω
на замовлення 329 шт:
термін постачання 14-30 дні (днів)
1+624.83 грн
3+358.89 грн
8+339.23 грн
30+336.67 грн
60+326.42 грн
В кошику  од. на суму  грн.
IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTT40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTY14N60X2 IXTY14N60X2 IXYS littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Power dissipation: 180W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: DPAK
On-state resistance: 0.25Ω
Mounting: SMD
Pulsed drain current: 18A
на замовлення 337 шт:
термін постачання 14-30 дні (днів)
2+369.93 грн
5+240.97 грн
12+227.30 грн
70+218.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T IXYS IXFN420N10T.pdf Category: Transistor modules
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhancement
Gate charge: 670nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
1+2336.45 грн
2+2051.64 грн
10+1972.17 грн
В кошику  од. на суму  грн.
IXTH24N50L IXTH24N50L IXYS IXTH24N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ460P2 IXTQ460P2 IXYS IXTQ460P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Power dissipation: 480W
Gate charge: 48nC
Polarisation: unipolar
Technology: Polar2™
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3P
On-state resistance: 0.27Ω
Reverse recovery time: 400ns
Mounting: THT
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
1+599.99 грн
4+317.87 грн
9+300.78 грн
30+288.82 грн
В кошику  од. на суму  грн.
IXFN210N30X3 IXFN210N30X3 IXYS IXFN210N30X3.pdf 300VProductBrief.pdf Category: Transistor modules
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate charge: 375nC
Reverse recovery time: 190ns
Gate-source voltage: ±20V
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+3732.43 грн
3+3332.53 грн
В кошику  од. на суму  грн.
LF2304NTR LF2304NTR IXYS LF2304NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXYH30N65C3 IXYH30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
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IXTH64N65X IXTH64N65X IXYS IXTH64N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
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IXFN140N30P IXFN140N30P IXYS IXFN140N30P.pdf description Category: Transistor modules
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Electrical mounting: screw
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 200ns
Gate charge: 185nC
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IXFN132N50P3 IXFN132N50P3 IXYS IXFN132N50P3.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 39mΩ
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 250nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
1+2699.02 грн
5+2476.32 грн
10+2409.67 грн
В кошику  од. на суму  грн.
IXFN210N20P IXFN210N20P IXYS IXFN210N20P.pdf Category: Transistor modules
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 121 шт:
термін постачання 14-30 дні (днів)
1+2756.99 грн
50+2461.80 грн
В кошику  од. на суму  грн.
IXFN44N100P IXFN44N100P IXYS IXFN44N100P.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhancement
Reverse recovery time: 300ns
Pulsed drain current: 110A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH15N100P IXFH15N100P IXYS IXFH15N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
1+939.55 грн
2+641.73 грн
5+606.69 грн
В кошику  од. на суму  грн.
IXFA5N100P IXFA5N100P IXYS IXFA(H,P)5N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
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IXTP05N100P IXTP05N100P IXYS IXTP05N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 750ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
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IXTP05N100 IXTP05N100 IXYS IXTA(P)05N100_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
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IXTA05N100 IXTA05N100 IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
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IXTP05N100M IXTP05N100M IXYS IXTP05N100M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
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IXFH15N100Q3 IXFH15N100Q3 IXYS IXF_15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Q3-Class
Kind of package: tube
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
1+1111.63 грн
3+975.83 грн
10+939.09 грн
В кошику  од. на суму  грн.
IXFT15N100Q3 IXFT15N100Q3 IXYS IXF_15N100Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Kind of package: tube
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DSEC16-12A DSEC16-12A IXYS DSEC16-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; Ifsm: 40A; TO220AB; tube; 60W
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 40A
Max. forward voltage: 2.94V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.39mm
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
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DSEC16-12AS-TUB DSEC16-12AS-TUB IXYS DSEC16-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Reverse recovery time: 40ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 1.96V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: rectifying
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IXTP4N80P IXTP4N80P IXYS IXTA(P)4N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
на замовлення 312 шт:
термін постачання 14-30 дні (днів)
4+134.35 грн
50+116.21 грн
250+108.52 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXFX27N80Q IXFK(X)27N80Q.pdf
IXFX27N80Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1591.99 грн
2+1463.75 грн
10+1407.35 грн
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IXYA50N65C3 IXY_50N65C3.pdf
IXYA50N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 250A
Turn-on time: 56ns
Turn-off time: 145ns
Gate charge: 86nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH50N65C3 IXY_50N65C3.pdf
IXYH50N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
Technology: GenX3™; Planar; XPT™
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IXGX320N60B3 IXGK(x)320N60B3.pdf
IXGX320N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 585nC
Pulsed collector current: 1.2kA
Turn-on time: 107ns
Turn-off time: 595ns
Gate-emitter voltage: ±20V
Collector current: 320A
Collector-emitter voltage: 600V
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1776.95 грн
В кошику  од. на суму  грн.
IXFA34N65X2 IXFA34N65X2.pdf
IXFA34N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Gate charge: 56nC
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.
IXFH34N65X2 IXF_34N65X2.pdf
IXFH34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Gate charge: 56nC
на замовлення 153 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+510.72 грн
3+371.71 грн
8+352.05 грн
120+338.38 грн
В кошику  од. на суму  грн.
IXTH34N65X2 IXT_34N65X2.pdf
IXTH34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.
IXTP24N65X2 IXT_24N65X2.pdf
IXTP24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+546.61 грн
4+276.00 грн
10+261.48 грн
В кошику  од. на суму  грн.
IXTP90N055T2 IXTA(I,P,Y)90N055T2.pdf
IXTP90N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Mounting: THT
Power dissipation: 150W
Gate charge: 42nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 90A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 8.4mΩ
Reverse recovery time: 37ns
на замовлення 290 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+282.51 грн
10+105.10 грн
26+99.12 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTR90P20P IXTR90P20P.pdf
IXTR90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Mounting: THT
Power dissipation: 312W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -53A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 48mΩ
Reverse recovery time: 315ns
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+656.12 грн
В кошику  од. на суму  грн.
IXTA05N100HV IXTA(P)05N100_HV.pdf
IXTA05N100HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
на замовлення 282 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+397.54 грн
3+337.53 грн
5+211.06 грн
13+199.95 грн
250+197.39 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Reverse recovery time: 128ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Technology: HiPerFET™; X3-Class
Drain current: 160A
Pulsed drain current: 500A
Drain-source voltage: 200V
Power dissipation: 390W
Type of semiconductor module: MOSFET transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2631.84 грн
В кошику  од. на суму  грн.
IXTP24N65X2M IXTP24N65X2M.pdf
IXTP24N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+484.04 грн
5+209.35 грн
13+197.39 грн
В кошику  од. на суму  грн.
IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
на замовлення 204 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+455.51 грн
4+289.67 грн
10+274.29 грн
30+263.18 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 47ns
Turn-off time: 350ns
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1255.19 грн
В кошику  од. на суму  грн.
IXFL82N60P IXFL82N60P.pdf
IXFL82N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Power dissipation: 625W
Kind of package: tube
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+919.30 грн
В кошику  од. на суму  грн.
IXFN50N120SK IXFN50N120SK.pdf
IXFN50N120SK
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+7190.64 грн
3+5902.85 грн
В кошику  од. на суму  грн.
IXTQ34N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec
IXTQ34N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 54nC
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+720.54 грн
2+494.75 грн
6+468.26 грн
В кошику  од. на суму  грн.
IXFB82N60Q3 IXFB82N60Q3.pdf
IXFB82N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhancement
Power dissipation: 1.56kW
Technology: HiPerFET™; Q3-Class
Kind of package: tube
Reverse recovery time: 300ns
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1011.33 грн
В кошику  од. на суму  грн.
IXFN66N85X IXFN66N85X.pdf
IXFN66N85X
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 230nC
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3676.30 грн
В кошику  од. на суму  грн.
IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+622.07 грн
5+538.33 грн
10+498.17 грн
В кошику  од. на суму  грн.
IXFN40N110P IXFN40N110P.pdf
IXFN40N110P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 310nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2089.83 грн
В кошику  од. на суму  грн.
IXFN40N110Q3 IXFN40N110Q3.pdf
IXFN40N110Q3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 300nC
Reverse recovery time: 434ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1887.38 грн
В кошику  од. на суму  грн.
IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+888.94 грн
2+530.64 грн
6+501.59 грн
В кошику  од. на суму  грн.
IXFK64N60P3 IXF_64N60P3.pdf
IXFK64N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1511.93 грн
2+845.95 грн
4+799.81 грн
100+770.75 грн
В кошику  од. на суму  грн.
IXFH28N60P3 IXFH(Q)28N60P3.pdf
IXFH28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 695W
Case: TO247-3
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.26Ω
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+745.38 грн
3+425.54 грн
7+402.47 грн
60+386.23 грн
В кошику  од. на суму  грн.
IXFB82N60P IXFB82N60P.pdf
IXFB82N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of channel: enhancement
Power dissipation: 1.25kW
Technology: HiPerFET™; Polar™
Kind of package: tube
Reverse recovery time: 200ns
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1975.72 грн
2+1734.62 грн
5+1733.77 грн
25+1667.12 грн
В кошику  од. на суму  грн.
IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 650W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.19Ω
Gate charge: 102nC
Polarisation: unipolar
на замовлення 266 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1119.91 грн
2+635.74 грн
5+600.71 грн
В кошику  од. на суму  грн.
IXFN180N25T IXFN180N25T.pdf
IXFN180N25T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Kind of channel: enhancement
Gate charge: 364nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1871.74 грн
2+1643.19 грн
20+1625.25 грн
В кошику  од. на суму  грн.
IXFA34N65X3
IXFA34N65X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Pulsed drain current: 48A
Gate charge: 29nC
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В кошику  од. на суму  грн.
IXKH47N60C IXKH47N60C.pdf
IXKH47N60C
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
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IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Mounting: THT
Power dissipation: 350W
Gate charge: 50nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.27Ω
на замовлення 329 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+624.83 грн
3+358.89 грн
8+339.23 грн
30+336.67 грн
60+326.42 грн
В кошику  од. на суму  грн.
IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTH(T,Q)40N50L2.pdf
IXTT40N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTY14N60X2 littelfuse-discrete-mosfets-ixtp12n65x2m-datasheet?assetguid=bb457d93-cec3-41b9-97ee-48a3a768170e
IXTY14N60X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Power dissipation: 180W
Gate charge: 16.7nC
Polarisation: unipolar
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: DPAK
On-state resistance: 0.25Ω
Mounting: SMD
Pulsed drain current: 18A
на замовлення 337 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+369.93 грн
5+240.97 грн
12+227.30 грн
70+218.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T.pdf
IXFN420N10T
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhancement
Gate charge: 670nC
Reverse recovery time: 140ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2336.45 грн
2+2051.64 грн
10+1972.17 грн
В кошику  од. на суму  грн.
IXTH24N50L IXTH24N50L.pdf
IXTH24N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ460P2 IXTQ460P2.pdf
IXTQ460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Power dissipation: 480W
Gate charge: 48nC
Polarisation: unipolar
Technology: Polar2™
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3P
On-state resistance: 0.27Ω
Reverse recovery time: 400ns
Mounting: THT
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+599.99 грн
4+317.87 грн
9+300.78 грн
30+288.82 грн
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IXFN210N30X3 IXFN210N30X3.pdf 300VProductBrief.pdf
IXFN210N30X3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 210A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 4.6mΩ
Pulsed drain current: 650A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate charge: 375nC
Reverse recovery time: 190ns
Gate-source voltage: ±20V
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3732.43 грн
3+3332.53 грн
В кошику  од. на суму  грн.
LF2304NTR LF2304NTR.pdf
LF2304NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXYH30N65C3 IXYH(P)30N65C3.pdf
IXYH30N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
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IXTH64N65X IXTH64N65X.pdf
IXTH64N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
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IXFN140N30P description IXFN140N30P.pdf
IXFN140N30P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 110A
Electrical mounting: screw
On-state resistance: 24mΩ
Pulsed drain current: 300A
Power dissipation: 700W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 200ns
Gate charge: 185nC
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IXFN132N50P3 IXFN132N50P3.pdf
IXFN132N50P3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 112A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 39mΩ
Pulsed drain current: 330A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 250nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2699.02 грн
5+2476.32 грн
10+2409.67 грн
В кошику  од. на суму  грн.
IXFN210N20P IXFN210N20P.pdf
IXFN210N20P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
на замовлення 121 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2756.99 грн
50+2461.80 грн
В кошику  од. на суму  грн.
IXFN44N100P IXFN44N100P.pdf
IXFN44N100P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.22Ω
Gate charge: 0.35µC
Kind of channel: enhancement
Reverse recovery time: 300ns
Pulsed drain current: 110A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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Мінімальне замовлення: 300 шт
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IXFH15N100P IXFH15N100P.pdf
IXFH15N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+939.55 грн
2+641.73 грн
5+606.69 грн
В кошику  од. на суму  грн.
IXFA5N100P IXFA(H,P)5N100P.pdf
IXFA5N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
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IXTP05N100P IXTP05N100P.pdf
IXTP05N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 750ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
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IXTP05N100 IXTA(P)05N100_HV.pdf
IXTP05N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
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IXTA05N100 IXTA(P)05N100_HV.pdf
IXTA05N100
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
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IXTP05N100M IXTP05N100M.pdf
IXTP05N100M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Kind of package: tube
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IXFH15N100Q3 IXF_15N100Q3.pdf
IXFH15N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Q3-Class
Kind of package: tube
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1111.63 грн
3+975.83 грн
10+939.09 грн
В кошику  од. на суму  грн.
IXFT15N100Q3 IXF_15N100Q3.pdf
IXFT15N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Kind of package: tube
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DSEC16-12A DSEC16-12A.pdf
DSEC16-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; Ifsm: 40A; TO220AB; tube; 60W
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 40A
Max. forward voltage: 2.94V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.39mm
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
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DSEC16-12AS-TUB DSEC16-12AS.pdf
DSEC16-12AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Reverse recovery time: 40ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 1.96V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Load current: 8A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: rectifying
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IXTP4N80P IXTA(P)4N80P.pdf
IXTP4N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
на замовлення 312 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+134.35 грн
50+116.21 грн
250+108.52 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.