| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXDD614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V кількість в упаковці: 1 шт |
на замовлення 1047 шт: термін постачання 14-21 дні (днів) |
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IXDD614SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 264 шт: термін постачання 14-21 дні (днів) |
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IXDD614YI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns кількість в упаковці: 1 шт |
на замовлення 540 шт: термін постачання 14-21 дні (днів) |
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IXDD630CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 135ns Turn-on time: 135ns кількість в упаковці: 1 шт |
на замовлення 217 шт: термін постачання 14-21 дні (днів) |
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IXDF602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 93ns Turn-on time: 93ns кількість в упаковці: 1 шт |
на замовлення 51 шт: термін постачання 14-21 дні (днів) |
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| IXDF602SIA | IXYS |
IXDF602SIA MOSFET/IGBT drivers |
на замовлення 80 шт: термін постачання 14-21 дні (днів) |
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IXDF604PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting; non-inverting Turn-off time: 79ns Turn-on time: 81ns кількість в упаковці: 1 шт |
на замовлення 415 шт: термін постачання 14-21 дні (днів) |
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| IXDF604SIA | IXYS |
IXDF604SIA MOSFET/IGBT drivers |
на замовлення 347 шт: термін постачання 14-21 дні (днів) |
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IXDH20N120 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Power dissipation: 200W Case: TO247-3 Mounting: THT Gate charge: 70nC Kind of package: tube Collector-emitter voltage: 1.2kV Turn-on time: 175ns Turn-off time: 570ns Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 50A кількість в упаковці: 1 шт |
на замовлення 206 шт: термін постачання 14-21 дні (днів) |
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IXDI602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 93ns Turn-on time: 93ns кількість в упаковці: 1 шт |
на замовлення 975 шт: термін постачання 14-21 дні (днів) |
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| IXDI602SI | IXYS |
IXDI602SI MOSFET/IGBT drivers |
на замовлення 272 шт: термін постачання 14-21 дні (днів) |
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IXDI602SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 93ns Turn-on time: 93ns кількість в упаковці: 1 шт |
на замовлення 975 шт: термін постачання 14-21 дні (днів) |
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IXDI604PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 79ns Turn-on time: 81ns кількість в упаковці: 1 шт |
на замовлення 974 шт: термін постачання 14-21 дні (днів) |
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| IXDI604SIA | IXYS |
IXDI604SIA MOSFET/IGBT drivers |
на замовлення 1045 шт: термін постачання 14-21 дні (днів) |
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IXDI609CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Output current: -9...9A Turn-off time: 105ns Turn-on time: 115ns Number of channels: 1 Supply voltage: 4.5...35V Kind of integrated circuit: gate driver; low-side Kind of output: inverting кількість в упаковці: 1 шт |
на замовлення 790 шт: термін постачання 14-21 дні (днів) |
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| IXDI609SIA | IXYS |
IXDI609SIA MOSFET/IGBT drivers |
на замовлення 893 шт: термін постачання 14-21 дні (днів) |
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| IXDI609YI | IXYS |
IXDI609YI MOSFET/IGBT drivers |
на замовлення 162 шт: термін постачання 14-21 дні (днів) |
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IXDI614CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 130ns Turn-on time: 140ns кількість в упаковці: 1 шт |
на замовлення 1266 шт: термін постачання 14-21 дні (днів) |
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IXDI614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V кількість в упаковці: 1 шт |
на замовлення 513 шт: термін постачання 14-21 дні (днів) |
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IXDI630MCI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Kind of package: tube Operating temperature: -40...125°C Output current: -30...30A Turn-off time: 135ns Turn-on time: 135ns Number of channels: 1 Supply voltage: 12.5...35V Case: TO220-5 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Mounting: THT Kind of output: inverting кількість в упаковці: 1 шт |
на замовлення 207 шт: термін постачання 14-21 дні (днів) |
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IXDI630MYI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V Kind of package: tube Operating temperature: -40...125°C Output current: -30...30A Turn-off time: 135ns Turn-on time: 135ns Number of channels: 1 Supply voltage: 12.5...35V Case: TO263-5 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Mounting: SMD Kind of output: inverting кількість в упаковці: 1 шт |
на замовлення 110 шт: термін постачання 14-21 дні (днів) |
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| IXDI630YI | IXYS |
IXDI630YI MOSFET/IGBT drivers |
на замовлення 192 шт: термін постачання 14-21 дні (днів) |
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IXDN602D2TR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 1 шт |
на замовлення 2000 шт: термін постачання 14-21 дні (днів) |
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IXDN602SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 1 шт |
на замовлення 569 шт: термін постачання 14-21 дні (днів) |
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IXDN604PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 1 шт |
на замовлення 238 шт: термін постачання 14-21 дні (днів) |
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IXDN604SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 1 шт |
на замовлення 879 шт: термін постачання 14-21 дні (днів) |
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IXDN604SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns кількість в упаковці: 1 шт |
на замовлення 626 шт: термін постачання 14-21 дні (днів) |
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IXDN609CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 1061 шт: термін постачання 14-21 дні (днів) |
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IXDN609PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 655 шт: термін постачання 14-21 дні (днів) |
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IXDN609SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 1340 шт: термін постачання 14-21 дні (днів) |
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IXDN609SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 367 шт: термін постачання 14-21 дні (днів) |
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IXDN609YI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns кількість в упаковці: 1 шт |
на замовлення 814 шт: термін постачання 14-21 дні (днів) |
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IXDN614CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 728 шт: термін постачання 14-21 дні (днів) |
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IXDN614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V кількість в упаковці: 1 шт |
на замовлення 82 шт: термін постачання 14-21 дні (днів) |
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IXDN614SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 23 шт: термін постачання 14-21 дні (днів) |
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IXDN614YI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -14...14A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns кількість в упаковці: 1 шт |
на замовлення 168 шт: термін постачання 14-21 дні (днів) |
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IXDN630CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Output current: -30...30A Turn-off time: 135ns Turn-on time: 135ns Number of channels: 1 Supply voltage: 12.5...35V Kind of integrated circuit: gate driver; low-side Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 394 шт: термін постачання 14-21 дні (днів) |
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IXDN630MCI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V Kind of package: tube Operating temperature: -40...125°C Output current: -30...30A Turn-off time: 135ns Turn-on time: 135ns Number of channels: 1 Supply voltage: 9...35V Case: TO220-5 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Mounting: THT Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 110 шт: термін постачання 14-21 дні (днів) |
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IXDN630MYI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V Kind of package: tube Operating temperature: -40...125°C Output current: -30...30A Turn-off time: 135ns Turn-on time: 135ns Number of channels: 1 Supply voltage: 9...35V Case: TO263-5 Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Mounting: SMD Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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| IXDN630YI | IXYS |
IXDN630YI MOSFET/IGBT drivers |
на замовлення 114 шт: термін постачання 14-21 дні (днів) |
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IXFA10N80P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 40nC кількість в упаковці: 1 шт |
на замовлення 264 шт: термін постачання 14-21 дні (днів) |
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IXFA110N15T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns Case: TO263 Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 150nC Reverse recovery time: 85ns On-state resistance: 13mΩ Drain current: 110A Drain-source voltage: 150V Power dissipation: 480W Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 14-21 дні (днів) |
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IXFA12N50P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: HiPerFET™; Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V кількість в упаковці: 1 шт |
на замовлення 116 шт: термін постачання 14-21 дні (днів) |
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IXFA16N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: HiPerFET™; Polar3™ кількість в упаковці: 1 шт |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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IXFA16N60P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO263 On-state resistance: 470mΩ Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 79 шт: термін постачання 14-21 дні (днів) |
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IXFA180N10T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO263 On-state resistance: 6mΩ Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns кількість в упаковці: 1 шт |
на замовлення 136 шт: термін постачання 14-21 дні (днів) |
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IXFA18N60X | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO263 On-state resistance: 0.23Ω Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns кількість в упаковці: 1 шт |
на замовлення 75 шт: термін постачання 14-21 дні (днів) |
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IXFA20N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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IXFA22N60P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO263 On-state resistance: 390mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 296 шт: термін постачання 14-21 дні (днів) |
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IXFA230N075T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns Type of transistor: N-MOSFET Mounting: SMD Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Polarisation: unipolar Gate charge: 178nC Reverse recovery time: 59ns On-state resistance: 4.2mΩ Drain current: 230A Power dissipation: 480W Drain-source voltage: 75V Kind of channel: enhancement Case: TO263 кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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IXFA230N075T2-7 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263-7 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 59ns Features of semiconductor devices: thrench gate power mosfet кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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IXFA24N60X | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO263 On-state resistance: 0.175Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns кількість в упаковці: 1 шт |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
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IXFA26N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 26A Power dissipation: 500W Case: TO263 On-state resistance: 0.25Ω Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 74 шт: термін постачання 14-21 дні (днів) |
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IXFA3N120 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263 Type of transistor: N-MOSFET Mounting: SMD Kind of package: tube Polarisation: unipolar Gate charge: 39nC Drain current: 3A Power dissipation: 200W Drain-source voltage: 1.2kV Kind of channel: enhancement Case: TO263 кількість в упаковці: 1 шт |
на замовлення 321 шт: термін постачання 14-21 дні (днів) |
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IXFA4N85X | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W Mounting: SMD Case: TO263 On-state resistance: 2.5Ω Drain current: 3.5A Pulsed drain current: 10A Gate-source voltage: ±30V Power dissipation: 150W Drain-source voltage: 850V Kind of channel: enhancement Technology: HiPerFET™; X-Class Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: ultra junction x-class Polarisation: unipolar Gate charge: 7nC Reverse recovery time: 170ns кількість в упаковці: 1 шт |
на замовлення 96 шт: термін постачання 14-21 дні (днів) |
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| IXFA56N30X3 | IXYS | IXFA56N30X3 SMD N channel transistors |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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| IXFA60N25X3 | IXYS | IXFA60N25X3 SMD N channel transistors |
на замовлення 79 шт: термін постачання 14-21 дні (днів) |
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| IXFA72N20X3 | IXYS | IXFA72N20X3 SMD N channel transistors |
на замовлення 82 шт: термін постачання 14-21 дні (днів) |
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| IXFA7N100P | IXYS |
IXFA7N100P SMD N channel transistors |
на замовлення 134 шт: термін постачання 14-21 дні (днів) |
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IXFA7N80P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Reverse recovery time: 250ns кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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| IXDD614PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
кількість в упаковці: 1 шт
на замовлення 1047 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.91 грн |
| 10+ | 144.08 грн |
| 25+ | 132.05 грн |
| IXDD614SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 264 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 322.54 грн |
| 10+ | 233.51 грн |
| IXDD614YI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
кількість в упаковці: 1 шт
на замовлення 540 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 515.23 грн |
| 10+ | 330.89 грн |
| 50+ | 271.75 грн |
| IXDD630CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
кількість в упаковці: 1 шт
на замовлення 217 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 683.20 грн |
| 10+ | 543.53 грн |
| IXDF602PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 93ns
Turn-on time: 93ns
кількість в упаковці: 1 шт
на замовлення 51 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.27 грн |
| 10+ | 86.45 грн |
| 25+ | 70.81 грн |
| 50+ | 65.07 грн |
| IXDF602SIA |
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Виробник: IXYS
IXDF602SIA MOSFET/IGBT drivers
IXDF602SIA MOSFET/IGBT drivers
на замовлення 80 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.50 грн |
| 18+ | 63.15 грн |
| 50+ | 60.28 грн |
| 300+ | 59.62 грн |
| IXDF604PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
кількість в упаковці: 1 шт
на замовлення 415 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.33 грн |
| 10+ | 130.17 грн |
| 50+ | 109.08 грн |
| 100+ | 101.43 грн |
| 250+ | 90.90 грн |
| 500+ | 84.20 грн |
| IXDF604SIA |
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Виробник: IXYS
IXDF604SIA MOSFET/IGBT drivers
IXDF604SIA MOSFET/IGBT drivers
на замовлення 347 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 159.72 грн |
| 12+ | 101.43 грн |
| 31+ | 95.69 грн |
| IXDH20N120 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 175ns
Turn-off time: 570ns
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 1.2kV
Turn-on time: 175ns
Turn-off time: 570ns
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
кількість в упаковці: 1 шт
на замовлення 206 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 580.15 грн |
| 3+ | 503.79 грн |
| 10+ | 428.67 грн |
| 30+ | 384.66 грн |
| IXDI602PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
кількість в упаковці: 1 шт
на замовлення 975 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 180.33 грн |
| 10+ | 109.30 грн |
| 25+ | 89.94 грн |
| 50+ | 79.42 грн |
| 100+ | 71.76 грн |
| 250+ | 62.20 грн |
| IXDI602SI |
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Виробник: IXYS
IXDI602SI MOSFET/IGBT drivers
IXDI602SI MOSFET/IGBT drivers
на замовлення 272 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 177.24 грн |
| 16+ | 73.68 грн |
| 43+ | 68.89 грн |
| IXDI602SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 93ns
Turn-on time: 93ns
кількість в упаковці: 1 шт
на замовлення 975 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 180.33 грн |
| 10+ | 109.30 грн |
| 25+ | 88.03 грн |
| 100+ | 68.89 грн |
| 300+ | 65.07 грн |
| IXDI604PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
кількість в упаковці: 1 шт
на замовлення 974 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.90 грн |
| 10+ | 101.35 грн |
| 50+ | 90.90 грн |
| IXDI604SIA |
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Виробник: IXYS
IXDI604SIA MOSFET/IGBT drivers
IXDI604SIA MOSFET/IGBT drivers
на замовлення 1045 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 158.69 грн |
| 12+ | 99.51 грн |
| 32+ | 94.73 грн |
| IXDI609CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -9...9A
Turn-off time: 105ns
Turn-on time: 115ns
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
кількість в упаковці: 1 шт
на замовлення 790 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 289.56 грн |
| 6+ | 214.63 грн |
| 10+ | 201.90 грн |
| 15+ | 195.20 грн |
| 50+ | 187.54 грн |
| IXDI609SIA |
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Виробник: IXYS
IXDI609SIA MOSFET/IGBT drivers
IXDI609SIA MOSFET/IGBT drivers
на замовлення 893 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.22 грн |
| 12+ | 96.64 грн |
| 32+ | 91.86 грн |
| IXDI609YI |
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Виробник: IXYS
IXDI609YI MOSFET/IGBT drivers
IXDI609YI MOSFET/IGBT drivers
на замовлення 162 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 296.77 грн |
| 6+ | 207.64 грн |
| 15+ | 196.16 грн |
| 50+ | 195.75 грн |
| IXDI614CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
кількість в упаковці: 1 шт
на замовлення 1266 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 354.48 грн |
| 3+ | 323.93 грн |
| 10+ | 287.06 грн |
| IXDI614PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
кількість в упаковці: 1 шт
на замовлення 513 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 296.77 грн |
| 10+ | 186.81 грн |
| 25+ | 155.97 грн |
| 50+ | 140.66 грн |
| 100+ | 137.79 грн |
| IXDI630MCI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: inverting
кількість в упаковці: 1 шт
на замовлення 207 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 791.40 грн |
| 10+ | 520.68 грн |
| 50+ | 477.47 грн |
| IXDI630MYI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: inverting
кількість в упаковці: 1 шт
на замовлення 110 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 893.41 грн |
| 10+ | 587.25 грн |
| 50+ | 488.00 грн |
| IXDI630YI |
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Виробник: IXYS
IXDI630YI MOSFET/IGBT drivers
IXDI630YI MOSFET/IGBT drivers
на замовлення 192 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 902.69 грн |
| 2+ | 576.03 грн |
| 6+ | 544.45 грн |
| 1000+ | 543.53 грн |
| IXDN602D2TR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
на замовлення 2000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.36 грн |
| 10+ | 113.28 грн |
| 25+ | 92.82 грн |
| 50+ | 82.29 грн |
| 100+ | 73.68 грн |
| 250+ | 64.11 грн |
| 500+ | 63.15 грн |
| IXDN602SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
кількість в упаковці: 1 шт
на замовлення 569 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 103.05 грн |
| 10+ | 69.56 грн |
| 25+ | 62.20 грн |
| IXDN604PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
на замовлення 238 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.27 грн |
| 10+ | 101.35 грн |
| 50+ | 90.90 грн |
| IXDN604SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
на замовлення 879 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.79 грн |
| 50+ | 187.80 грн |
| 100+ | 168.41 грн |
| 200+ | 156.93 грн |
| 300+ | 154.05 грн |
| IXDN604SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
кількість в упаковці: 1 шт
на замовлення 626 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.59 грн |
| 10+ | 101.35 грн |
| IXDN609CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 1061 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.89 грн |
| 10+ | 194.76 грн |
| 25+ | 180.85 грн |
| IXDN609PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 655 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.08 грн |
| 10+ | 98.37 грн |
| 50+ | 88.03 грн |
| IXDN609SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 1340 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.76 грн |
| 10+ | 159.98 грн |
| 25+ | 146.40 грн |
| 50+ | 140.66 грн |
| 100+ | 136.83 грн |
| IXDN609SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 367 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.08 грн |
| 10+ | 97.38 грн |
| 25+ | 88.03 грн |
| IXDN609YI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
кількість в упаковці: 1 шт
на замовлення 814 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.86 грн |
| 10+ | 216.62 грн |
| 50+ | 177.02 грн |
| 100+ | 166.49 грн |
| IXDN614CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 728 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 402.91 грн |
| 10+ | 297.11 грн |
| 25+ | 281.32 грн |
| IXDN614PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
кількість в упаковці: 1 шт
на замовлення 82 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 293.68 грн |
| 10+ | 181.84 грн |
| 50+ | 135.87 грн |
| 100+ | 123.44 грн |
| 250+ | 121.52 грн |
| IXDN614SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 23 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 273.07 грн |
| 5+ | 235.50 грн |
| IXDN614YI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
кількість в упаковці: 1 шт
на замовлення 168 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 400.85 грн |
| 10+ | 301.08 грн |
| IXDN630CI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 394 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 714.11 грн |
| 2+ | 623.03 грн |
| 6+ | 566.46 грн |
| IXDN630MCI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO220-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: THT
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 110 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 587.37 грн |
| 10+ | 543.53 грн |
| IXDN630MYI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Kind of package: tube
Operating temperature: -40...125°C
Output current: -30...30A
Turn-off time: 135ns
Turn-on time: 135ns
Number of channels: 1
Supply voltage: 9...35V
Case: TO263-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 675.99 грн |
| 10+ | 580.30 грн |
| IXDN630YI |
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Виробник: IXYS
IXDN630YI MOSFET/IGBT drivers
IXDN630YI MOSFET/IGBT drivers
на замовлення 114 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 751.21 грн |
| 2+ | 576.03 грн |
| 6+ | 544.45 грн |
| IXFA10N80P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
кількість в упаковці: 1 шт
на замовлення 264 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 369.94 грн |
| 3+ | 311.02 грн |
| 10+ | 223.91 грн |
| 50+ | 221.03 грн |
| IXFA110N15T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 480W; TO263; 85ns
Case: TO263
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 150nC
Reverse recovery time: 85ns
On-state resistance: 13mΩ
Drain current: 110A
Drain-source voltage: 150V
Power dissipation: 480W
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 536.87 грн |
| 50+ | 412.37 грн |
| 100+ | 335.86 грн |
| 250+ | 298.54 грн |
| IXFA12N50P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
кількість в упаковці: 1 шт
на замовлення 116 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.37 грн |
| IXFA16N50P3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.34 грн |
| 3+ | 215.62 грн |
| 10+ | 182.76 грн |
| 50+ | 164.58 грн |
| IXFA16N60P3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 79 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.25 грн |
| IXFA180N10T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
кількість в упаковці: 1 шт
на замовлення 136 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 382.30 грн |
| IXFA18N60X |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
кількість в упаковці: 1 шт
на замовлення 75 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.82 грн |
| IXFA20N50P3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 261.74 грн |
| 3+ | 227.55 грн |
| 10+ | 215.29 грн |
| IXFA22N60P3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 296 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 381.27 грн |
| 3+ | 330.89 грн |
| 10+ | 281.32 грн |
| 50+ | 264.09 грн |
| IXFA230N075T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Mounting: SMD
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 178nC
Reverse recovery time: 59ns
On-state resistance: 4.2mΩ
Drain current: 230A
Power dissipation: 480W
Drain-source voltage: 75V
Kind of channel: enhancement
Case: TO263
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Mounting: SMD
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 178nC
Reverse recovery time: 59ns
On-state resistance: 4.2mΩ
Drain current: 230A
Power dissipation: 480W
Drain-source voltage: 75V
Kind of channel: enhancement
Case: TO263
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 337.99 грн |
| 3+ | 293.13 грн |
| 10+ | 248.78 грн |
| 50+ | 223.91 грн |
| IXFA230N075T2-7 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 59ns
Features of semiconductor devices: thrench gate power mosfet
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 605.91 грн |
| 50+ | 324.93 грн |
| 100+ | 310.02 грн |
| IXFA24N60X |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 470.92 грн |
| 3+ | 408.40 грн |
| 10+ | 347.34 грн |
| 50+ | 311.94 грн |
| IXFA26N50P3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 74 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 162.81 грн |
| IXFA3N120 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
кількість в упаковці: 1 шт
на замовлення 321 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 804.79 грн |
| 3+ | 710.47 грн |
| 5+ | 638.23 грн |
| 10+ | 564.55 грн |
| 50+ | 523.40 грн |
| IXFA4N85X |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO263
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Case: TO263
On-state resistance: 2.5Ω
Drain current: 3.5A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 150W
Drain-source voltage: 850V
Kind of channel: enhancement
Technology: HiPerFET™; X-Class
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 7nC
Reverse recovery time: 170ns
кількість в упаковці: 1 шт
на замовлення 96 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 299.87 грн |
| 9+ | 135.14 грн |
| 24+ | 123.44 грн |
| IXFA56N30X3 |
Виробник: IXYS
IXFA56N30X3 SMD N channel transistors
IXFA56N30X3 SMD N channel transistors
на замовлення 4 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 745.03 грн |
| 3+ | 471.73 грн |
| 7+ | 446.85 грн |
| IXFA60N25X3 |
Виробник: IXYS
IXFA60N25X3 SMD N channel transistors
IXFA60N25X3 SMD N channel transistors
на замовлення 79 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 576.03 грн |
| 3+ | 456.42 грн |
| 7+ | 431.54 грн |
| IXFA72N20X3 |
Виробник: IXYS
IXFA72N20X3 SMD N channel transistors
IXFA72N20X3 SMD N channel transistors
на замовлення 82 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 725.45 грн |
| 3+ | 436.33 грн |
| 8+ | 412.41 грн |
| 500+ | 411.38 грн |
| IXFA7N100P |
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Виробник: IXYS
IXFA7N100P SMD N channel transistors
IXFA7N100P SMD N channel transistors
на замовлення 134 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 590.46 грн |
| 4+ | 342.56 грн |
| 10+ | 323.42 грн |
| IXFA7N80P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 389.52 грн |
| 50+ | 198.73 грн |
| 100+ | 174.15 грн |
| 500+ | 171.28 грн |












