Продукція > AOK
| Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||
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| AOK033V120X2 | Alpha & Omega Semiconductor Inc. | Description: 1200V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V Power Dissipation (Max): 300W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 17.5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V | на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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| AOK033V120X2Q | Alpha & Omega Semiconductor Inc. | Description: 1200V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V Power Dissipation (Max): 300W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 17.5mA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V Qualification: AEC-Q101 | на замовлення 214 шт: термін постачання 21-31 дні (днів) |
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| AOK040A60 | Alpha & Omega Semiconductor | High Voltage MOSFETs (500V - 1000V) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK042A60FD | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9165 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK060V65X2 | Alpha & Omega Semiconductor Inc. | Description: 650V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 6mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V | на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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| AOK060V65X2 | Alpha & Omega Semiconductor | AOK060V65X2 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK060V75X2Q | Alpha & Omega Semiconductor Inc. | Description: 750V SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 6mA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V Qualification: AEC-Q101 | на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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| AOK065A60 | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc) Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK065A60 | Alpha & Omega Semiconductor | High Voltage MOSFETs (500V - 1000V) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK065A60FD | Alpha & Omega Semiconductor Inc. | Description: LINEAR IC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK065V120X2Q | Alpha & Omega Semiconductor | 1200V SiC MOSFETs | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK065V65X2 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 40.3A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V Power Dissipation (Max): 187.5W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 10mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 400 V | на замовлення 225 шт: термін постачання 21-31 дні (днів) |
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| AOK095A60 | Alpha & Omega Semiconductor | N Channel Power Transistor | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK095A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 38A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V | на замовлення 830 шт: термін постачання 21-31 дні (днів) |
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| AOK095A60FD | Alpha & Omega Semiconductor Inc. | Description: LINEAR IC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 100 V | на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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| AOK10B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 20A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 163 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK10B60D | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 17.4nC Kind of package: tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK10N90 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 900V 10A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK10N90 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK125A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 28A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V | на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| AOK125A60 | Alpha & Omega Semiconductor | N Channel Power Transistor | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK125A60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 100A; 357W; TO247 Type of transistor: N-MOSFET Mounting: THT Case: TO247 Kind of package: tube Polarisation: unipolar Gate charge: 39nC On-state resistance: 0.125Ω Gate-source voltage: ±20V Drain current: 28A Pulsed drain current: 100A Power dissipation: 357W Drain-source voltage: 600V Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK15B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 30A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 196 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 23ns/74ns Switching Energy: 510µJ (on), 110µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 167 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK15B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK160A60 | Alpha & Omega Semiconductor | N Channel Power Transistor | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK160A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 24A TO247 | на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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| AOK160A60 | Alpha & Omega Semiconductor | N Channel Power Transistor | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK18N65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK18N65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20120XSD | Alpha & Omega Semiconductor Inc. | Description: DIODE ARRAY SIC 1200V 31A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 31A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V | на замовлення 230 шт: термін постачання 21-31 дні (днів) |
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| AOK20B120D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 20A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/152ns Switching Energy: 940µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 67.5 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 340 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B120D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B120E1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B120E1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/134ns Switching Energy: 830µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 60.5 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 333 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B120E2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 20A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/123ns Switching Energy: 820µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 53.5 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 250 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B120E2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B135D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1350V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/156ns Switching Energy: 1.05mJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 66 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 80 A Power - Max: 340 W | на замовлення 158 шт: термін постачання 21-31 дні (днів) |
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| AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR | AOK20B135D1 THT IGBT transistors | на замовлення 237 шт: термін постачання 14-21 дні (днів) |
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| AOK20B135D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B135E1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B135E1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1350V 20A 340W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/134ns Switching Energy: 800µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 58 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 80 A Power - Max: 250 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 40A 180W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 20ns/66ns Switching Energy: 760µJ (on), 180µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 24.6 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 74 A Power - Max: 167 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR | AOK20B60D1 THT IGBT transistors | на замовлення 87 шт: термін постачання 14-21 дні (днів) |
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| AOK20B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ Collector-emitter saturation voltage: 1.7V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 20A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 322 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/122ns Switching Energy: 470µJ (on), 270µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 227 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ Collector-emitter saturation voltage: 1.7V | на замовлення 687 шт: термін постачання 21-30 дні (днів) |
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| AOK20B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 292 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/123ns Switching Energy: 580µJ (on), 280µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 227 W | на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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| AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ Collector-emitter saturation voltage: 1.7V кількість в упаковці: 1 шт | на замовлення 687 шт: термін постачання 14-21 дні (днів) |
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| AOK20B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V | на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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| AOK20N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK22N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 22A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK22N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK2500L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 14A/180A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK27S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 27A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK29S50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 29A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK29S50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK29S50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Mounting: THT Type of transistor: IGBT Gate charge: 67nC Turn-off time: 340ns Turn-off switching energy: 1.28mJ Collector-emitter saturation voltage: 1.77V Gate-emitter voltage: ±30V Collector current: 30A Pulsed collector current: 120A Power dissipation: 170W Collector-emitter voltage: 1.2kV Case: TO247 Kind of package: tube кількість в упаковці: 1 шт | на замовлення 71 шт: термін постачання 14-21 дні (днів) |
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| AOK30B120D2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Mounting: THT Type of transistor: IGBT Gate charge: 67nC Turn-off time: 340ns Turn-off switching energy: 1.28mJ Collector-emitter saturation voltage: 1.77V Gate-emitter voltage: ±30V Collector current: 30A Pulsed collector current: 120A Power dissipation: 170W Collector-emitter voltage: 1.2kV Case: TO247 Kind of package: tube | на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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| AOK30B120D2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 30A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/115ns Switching Energy: 1.28mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 67 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 340 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B135C1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 30A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/110ns Switching Energy: 1.45mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 120 A Power - Max: 288 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B135D2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1350V 30A TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B135W1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube | на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| AOK30B135W1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube | на замовлення 20 шт: термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||
| AOK30B135W1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1350V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/129ns Switching Energy: 1.47mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 200 A Power - Max: 340 W | на замовлення 204 шт: термін постачання 21-31 дні (днів) |
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| AOK30B135W1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR | AOK30B135W1 THT IGBT transistors | на замовлення 213 шт: термін постачання 14-21 дні (днів) |
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| AOK30B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 137 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/71ns Switching Energy: 1.18mJ (on), 200µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 47 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 128 A Power - Max: 278 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 278W 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR | AOK30B60D1 THT IGBT transistors | на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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| AOK30B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 60A 208W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 20ns/58ns Switching Energy: 1.1mJ (on), 240µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 34 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 208 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 339 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 34ns/138ns Switching Energy: 1.02mJ (on), 410µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 300 W | на замовлення 121 шт: термін постачання 21-31 дні (днів) |
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| AOK30B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 150W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 63nC Kind of package: tube Turn-on time: 76ns Turn-off time: 193ns Collector-emitter saturation voltage: 1.66V Turn-off switching energy: 0.41mJ Turn-on switching energy: 1.02mJ | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK30B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120H1 Код товару: 175217
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Обраний товар
| Транзистори > IGBT | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||
| AOK40B120H1 | Alpha & Omega Semiconductor | 1200V, 40A AlphaIGBT TM With Soft and Fast Recovery Anti-parallel Diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ Mounting: THT Type of transistor: IGBT Gate charge: 128nC Turn-on time: 133ns Turn-off time: 375ns Turn-off switching energy: 1.24mJ Turn-on switching energy: 2.45mJ Collector-emitter saturation voltage: 1.8V Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Power dissipation: 250W Collector-emitter voltage: 1.2kV Case: TO247 Kind of package: tube | на замовлення 421 шт: термін постачання 21-30 дні (днів) |
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| AOK40B120H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ Mounting: THT Type of transistor: IGBT Gate charge: 128nC Turn-on time: 133ns Turn-off time: 375ns Turn-off switching energy: 1.24mJ Turn-on switching energy: 2.45mJ Collector-emitter saturation voltage: 1.8V Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Power dissipation: 250W Collector-emitter voltage: 1.2kV Case: TO247 Kind of package: tube кількість в упаковці: 1 шт | на замовлення 421 шт: термін постачання 14-21 дні (днів) |
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| AOK40B120M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 80A 600000mW 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 340 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 90ns/226ns Switching Energy: 3.87mJ (on), 1.25mJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 140 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 600 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120N1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 300 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 57ns/146ns Switching Energy: 3.4mJ (on), 1.4mJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 600 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120N1 | Alpha & Omega Semiconductor | Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120N1 | Alpha & Omega Semiconductor | Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120P1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120P1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B120P1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 53ns/210ns Switching Energy: 2.5mJ (on), 1.3mJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 202 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 600 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 138 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 28ns/77ns Switching Energy: 1.72mJ (on), 300µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 63.5 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 312.5 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 80A 312500mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 127 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 29ns/74ns Switching Energy: 1.55mJ (on), 300µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 278 W | на замовлення 92 шт: термін постачання 21-31 дні (днів) |
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| AOK40B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 111W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 53ns Turn-off time: 102ns Turn-off switching energy: 0.3mJ Turn-on switching energy: 1.55mJ Collector-emitter saturation voltage: 1.85V | на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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| AOK40B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 80A 278000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 111W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 53ns Turn-off time: 102ns Turn-off switching energy: 0.3mJ Turn-on switching energy: 1.55mJ Collector-emitter saturation voltage: 1.85V кількість в упаковці: 1 шт | на замовлення 240 шт: термін постачання 14-21 дні (днів) |
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| AOK40B65GQ1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 113W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 113W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 86nC Kind of package: tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65GQ1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 150W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 63nC Kind of package: tube Turn-on time: 82ns Turn-off time: 173ns Turn-off switching energy: 0.46mJ Turn-on switching energy: 1.27mJ Collector-emitter saturation voltage: 1.9V кількість в упаковці: 1 шт | на замовлення 155 шт: термін постачання 14-21 дні (днів) |
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| AOK40B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 150W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 63nC Kind of package: tube Turn-on time: 82ns Turn-off time: 173ns Turn-off switching energy: 0.46mJ Turn-on switching energy: 1.27mJ Collector-emitter saturation voltage: 1.9V | на замовлення 155 шт: термін постачання 21-30 дні (днів) |
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| AOK40B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 346 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 41ns/130ns Switching Energy: 1.27mJ (on), 460µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W | на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| AOK40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 152ns Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ Collector-emitter saturation voltage: 2.05V | на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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| AOK40B65H2AL | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 260mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65H2AL | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 315 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 1.17mJ (on), 540µJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 152ns Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ Collector-emitter saturation voltage: 2.05V кількість в упаковці: 1 шт | на замовлення 192 шт: термін постачання 14-21 дні (днів) |
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| AOK40B65H2AL | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65H2AL_002 | Alpha & Omega Semiconductor | AOK40B65H2AL_002 | на замовлення 32640 шт: термін постачання 21-31 дні (днів) |
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| AOK40B65HQ1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65HQ2 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65HQ2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65HQ3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65HQ3 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 156W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 156W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 74nC Kind of package: tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65HQ3 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65M3 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.5mJ; Eon: 1.3mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 150W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 59nC Kind of package: tube Turn-on time: 80ns Turn-off time: 175ns Turn-off switching energy: 0.5mJ Turn-on switching energy: 1.3mJ Collector-emitter saturation voltage: 1.95V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65M3 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40B65M3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 365 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 40ns/125ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 59 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W | на замовлення 213 шт: термін постачання 21-31 дні (днів) |
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| AOK40N30L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 300V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK40N30L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK42S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK42S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 39A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK50B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK50B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ Mounting: THT Turn-off time: 104ns Turn-off switching energy: 0.5mJ Turn-on switching energy: 2.37mJ Collector-emitter saturation voltage: 1.85V Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 125W Pulsed collector current: 168A Collector-emitter voltage: 600V Kind of package: tube Type of transistor: IGBT Case: TO247 Gate charge: 64nC Turn-on time: 98ns кількість в упаковці: 1 шт | на замовлення 45 шт: термін постачання 14-21 дні (днів) |
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| AOK50B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/68ns Switching Energy: 2.37mJ (on), 500µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 64 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 168 A Power - Max: 312 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK50B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK50B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ Mounting: THT Turn-off time: 104ns Turn-off switching energy: 0.5mJ Turn-on switching energy: 2.37mJ Collector-emitter saturation voltage: 1.85V Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 125W Pulsed collector current: 168A Collector-emitter voltage: 600V Kind of package: tube Type of transistor: IGBT Case: TO247 Gate charge: 64nC Turn-on time: 98ns | на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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| AOK50B65GL1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 50A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 282ns/915ns Switching Energy: 3.37mJ (on), 1.59mJ (off) Test Condition: 300V, 50A, 100Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 312 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK50B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK50B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 50A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 261 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 37ns/141ns Switching Energy: 1.92mJ (on), 850µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 76 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 375 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK50B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 100A 375W 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK50B65H1 | ALPHA & OMEGA SEMICONDUCTOR | AOK50B65H1 THT IGBT transistors | на замовлення 159 шт: термін постачання 14-21 дні (днів) |
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| AOK50B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 50A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 327 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 46ns/182ns Switching Energy: 2.09mJ (on), 1.03mJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 102 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 500 W | на замовлення 219 шт: термін постачання 21-31 дні (днів) |
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| AOK53S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK53S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK53S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 53A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3034 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK53S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK53S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 53A TO247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK5N100 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK5N100 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK5N100L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK5N100L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 120A 417mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 120A 417000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 120A 417W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 137 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 32ns/74ns Switching Energy: 3.1mJ (on), 730µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 210 A Power - Max: 417 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B60D1; IGBT; With Diode; 60A; 600V; 417W; Корпус: TO-247; ALPHA & OMEGA (шт) | на замовлення 1 шт: термін постачання 2-3 дні (днів) |
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| AOK60B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 288 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 39ns/153ns Switching Energy: 2.42mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 180A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-off time: 270ns Turn-on time: 113ns Turn-off switching energy: 1.17mJ Turn-on switching energy: 2.36mJ Collector-emitter saturation voltage: 1.95V кількість в упаковці: 1 шт | на замовлення 157 шт: термін постачання 14-21 дні (днів) |
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| AOK60B65H2AL | Alpha & Omega Semiconductor Inc. | Description: IGBT 60A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 318 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 35ns/168ns Switching Energy: 2.36mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 416 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 180A Mounting: THT Gate charge: 84nC Kind of package: tube Turn-off time: 270ns Turn-on time: 113ns Turn-off switching energy: 1.17mJ Turn-on switching energy: 2.36mJ Collector-emitter saturation voltage: 1.95V | на замовлення 157 шт: термін постачання 21-30 дні (днів) |
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| AOK60B65H2AL Код товару: 173446
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| товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| AOK60B65H2AL | Alpha & Omega Semiconductor | 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B65H2AL | Alpha & Omega Semiconductor | 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode | на замовлення 140 шт: термін постачання 21-31 дні (днів) |
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| AOK60B65HQ3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 60A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 36ns/157ns Switching Energy: 2.21mJ (on), 1.2mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B65M3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 346 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 44ns/166ns Switching Energy: 2.6mJ (on), 1.3mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 106 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60B65M3 | ALPHA & OMEGA SEMICONDUCTOR | AOK60B65M3 THT IGBT transistors | на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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| AOK60N30L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60N30L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 300V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V Power Dissipation (Max): 658W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK60N30L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK66518 | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK66613 | Alpha & Omega Semiconductor | 60V N-Channel MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK66613 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 58.5A/120A TO247 | на замовлення 590 шт: термін постачання 21-31 дні (днів) |
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| AOK66914 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 250W Case: TO247 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Technology: AlphaSGT™ | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK75B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 150A 600000mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK75B60D1 | ALPHA & OMEGA SEMICONDUCTOR | AOK75B60D1 THT IGBT transistors | на замовлення 202 шт: термін постачання 14-21 дні (днів) |
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| AOK75B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 150A 500W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 147 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 33ns/84ns Switching Energy: 3.7mJ (on), 1.3mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 118 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 290 A Power - Max: 500 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK75B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 75A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 295 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 47ns/175ns Switching Energy: 3.77mJ (on), 2.04mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 556 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK75B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 150A 556W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK75B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ Kind of package: tube Turn-on time: 140ns Turn-off time: 319ns Turn-off switching energy: 2.04mJ Turn-on switching energy: 3.77mJ Power dissipation: 278W Collector-emitter saturation voltage: 1.85V Collector current: 75A Pulsed collector current: 225A Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Case: TO247 Type of transistor: IGBT Mounting: THT Gate charge: 109nC | на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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| AOK75B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ Kind of package: tube Turn-on time: 140ns Turn-off time: 319ns Turn-off switching energy: 2.04mJ Turn-on switching energy: 3.77mJ Power dissipation: 278W Collector-emitter saturation voltage: 1.85V Collector current: 75A Pulsed collector current: 225A Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Case: TO247 Type of transistor: IGBT Mounting: THT Gate charge: 109nC кількість в упаковці: 1 шт | на замовлення 232 шт: термін постачання 14-21 дні (днів) |
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| AOK8N80 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK8N80 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7.4A; Idm: 26A; 245W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Power dissipation: 245W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.63Ω Mounting: THT Kind of channel: enhancement Gate charge: 26nC Pulsed drain current: 26A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK8N80 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V 7.4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK8N80L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V 7.4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK8N80L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK9N90 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-247 Tube | на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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| AOK9N90 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 900V 9A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V Power Dissipation (Max): 368W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOK9N90 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9A; Idm: 34A; 368W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 9A Pulsed drain current: 34A Power dissipation: 368W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 46nC Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOKS30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208mW 3-Pin(3+Tab) TO-247 Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOKS30B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 20ns/58ns Switching Energy: 1.1mJ (on), 240µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 34 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 208 W | на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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| AOKS40B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 29ns/74ns Switching Energy: 1.55mJ (on), 300µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 45 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 278 W | на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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| AOKS40B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 41ns/130ns Switching Energy: 1.27mJ (on), 460µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOKS40B65H2AL | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 1.17mJ (on), 540µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||
| AOKS40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 151ns Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ Collector-emitter saturation voltage: 2.05V кількість в упаковці: 1 шт | на замовлення 174 шт: термін постачання 14-21 дні (днів) |
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| AOKS40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 151ns Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ Collector-emitter saturation voltage: 2.05V | на замовлення 174 шт: термін постачання 21-30 дні (днів) |
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| AOKS40B65H2AL | Alpha & Omega Semiconductor | AOKS40B65H2AL | товару немає в наявності | В кошику од. на суму грн. |