Продукція > AOK

High Voltage MOSFETs (500V - 1000V)

товар відсутній

AOK060V65X2

AOK060V65X2

товар відсутній

AOK095A60

Description: MOSFET N-CH 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V

на замовлення 862 шт:

термін постачання 21-31 дні (днів)

1+	390.97 грн
30+	298.11 грн
120+	255.54 грн
510+	213.17 грн

AOK095A60

N Channel Power Transistor

товар відсутній

AOK10B60D

Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK10B60D

Description: IGBT 600V 20A 163W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 10ns/72ns
Switching Energy: 260µJ (on), 70µJ (off)
Test Condition: 400V, 10A, 30Ohm, 15V
Gate Charge: 17.4 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 163 W

товар відсутній

AOK10N90

Description: MOSFET N-CH 900V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V

товар відсутній

AOK10N90

Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK125A60

Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V

на замовлення 77 шт:

термін постачання 21-31 дні (днів)

1+	376.23 грн
10+	325.66 грн

AOK15B60D

Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK15B60D

Description: IGBT 600V 30A 167W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 196 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 23ns/74ns
Switching Energy: 510µJ (on), 110µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 25.4 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 167 W

товар відсутній

AOK160A60

Description: MOSFET N-CH 600V 24A TO247

на замовлення 240 шт:

термін постачання 21-31 дні (днів)

1+	322.19 грн
10+	279.09 грн
100+	228.68 грн

AOK160A60

N Channel Power Transistor

товар відсутній

AOK18N65L

Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R

товар відсутній

AOK18N65L

Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V

товар відсутній

AOK20B120D1

Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ

на замовлення 1 шт:

термін постачання 21-30 дні (днів)

1+	363.96 грн

AOK20B120D1

на замовлення 1 шт:

термін постачання 7-14 дні (днів)

1+	326.69 грн
3+	283.02 грн
5+	217.38 грн
12+	206.02 грн
240+	201.97 грн

AOK20B120D1

Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK20B120D1

Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/152ns
Switching Energy: 940µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 67.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 340 W

товар відсутній

AOK20B120E1

Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ

товар відсутній

AOK20B120E1

товар відсутній

AOK20B120E1

Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK20B120E1

Description: IGBT 1200V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/134ns
Switching Energy: 830µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 60.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 333 W

товар відсутній

AOK20B120E2

Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ

товар відсутній

AOK20B120E2

товар відсутній

AOK20B120E2

Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK20B120E2

Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/123ns
Switching Energy: 820µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 53.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 250 W

товар відсутній

AOK20B135D1

Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ

на замовлення 29 шт:

термін постачання 21-30 дні (днів)

2+	214.01 грн
3+	179.12 грн
6+	131.81 грн
17+	125.05 грн

Мінімальне замовлення: 2

AOK20B135D1

на замовлення 29 шт:

термін постачання 7-14 дні (днів)

2+	256.81 грн
3+	223.21 грн
6+	158.17 грн
17+	150.06 грн

Мінімальне замовлення: 2

AOK20B135D1

Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK20B135D1

Description: IGBT 1350V 40A 340W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/156ns
Switching Energy: 1.05mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 66 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 340 W

на замовлення 223 шт:

термін постачання 21-31 дні (днів)

1+	284.98 грн
30+	217.49 грн
120+	186.43 грн

AOK20B135E1

Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
Turn-off time: 311ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.2V
Collector current: 20A
Turn-off switching energy: 1.26mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 125W
Gate charge: 58nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247

на замовлення 4 шт:

термін постачання 21-30 дні (днів)

3+	127.75 грн

Мінімальне замовлення: 3

AOK20B135E1

Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK20B135E1

Description: IGBT 1350V 20A 340W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/134ns
Switching Energy: 800µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 250 W

товар відсутній

AOK20B60D1

Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK20B60D1

Description: IGBT 600V 40A 180W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/66ns
Switching Energy: 760µJ (on), 180µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 24.6 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 74 A
Power - Max: 167 W

товар відсутній

AOK20B60D1

Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
кількість в упаковці: 1 шт

на замовлення 187 шт:

термін постачання 7-14 дні (днів)

2+	194.79 грн
3+	169.31 грн
8+	128.16 грн
21+	120.86 грн

Мінімальне замовлення: 2

AOK20B60D1

на замовлення 187 шт:

термін постачання 21-30 дні (днів)

3+	135.86 грн
8+	106.8 грн
21+	100.71 грн

Мінімальне замовлення: 3

AOK20B65M1

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
кількість в упаковці: 240 шт

товар відсутній

AOK20B65M1

товар відсутній

AOK20B65M1

Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK20B65M1

Description: IGBT 650V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 322 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/122ns
Switching Energy: 470µJ (on), 270µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W

товар відсутній

AOK20B65M2

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ

товар відсутній

AOK20B65M2

Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK20B65M2

Description: IGBT 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 292 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/123ns
Switching Energy: 580µJ (on), 280µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W

на замовлення 109 шт:

термін постачання 21-31 дні (днів)

2+	242.17 грн
10+	195.68 грн
100+	158.3 грн

Мінімальне замовлення: 2

AOK20B65M2

товар відсутній

AOK20N60L

Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R

товар відсутній

AOK20N60L

Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V

на замовлення 172 шт:

термін постачання 21-31 дні (днів)

2+	268.84 грн
30+	205.19 грн
120+	175.88 грн

Мінімальне замовлення: 2

AOK20S60L

Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247

товар відсутній

AOK20S60L

Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247

товар відсутній

AOK20S60L

Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V

товар відсутній

AOK22N50L

Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R

товар відсутній

AOK22N50L

Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V

товар відсутній

AOK2500L

Description: MOSFET N-CH 150V 14A/180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V

на замовлення 263 шт:

термін постачання 21-31 дні (днів)

1+	400.8 грн
10+	346.62 грн
100+	283.99 грн

AOK27S60L

Description: MOSFET N-CH 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V

товар відсутній

AOK27S60L

Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R

товар відсутній

AOK29S50L

Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK29S50L

Description: MOSFET N-CH 500V 29A TO247

товар відсутній

AOK30B120D2

Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
кількість в упаковці: 1 шт

товар відсутній

AOK30B120D2

Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK30B120D2

Description: IGBT 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/115ns
Switching Energy: 1.28mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 340 W

товар відсутній

AOK30B120D2

товар відсутній

AOK30B135D2

Description: IGBT 1350V 30A TO-247

товар відсутній

AOK30B135W1

Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ

на замовлення 229 шт:

термін постачання 21-30 дні (днів)

2+	253.32 грн
3+	207.51 грн
5+	171.01 грн
13+	161.55 грн

Мінімальне замовлення: 2

AOK30B135W1

Description: IGBT 1350V 30A 170W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/129ns
Switching Energy: 1.47mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 340 W

на замовлення 207 шт:

термін постачання 21-31 дні (днів)

1+	292 грн
30+	222.4 грн
120+	190.63 грн

AOK30B135W1

на замовлення 229 шт:

термін постачання 7-14 дні (днів)

1+	303.98 грн
3+	258.59 грн
5+	205.21 грн
13+	193.86 грн

AOK30B135W1

Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK30B135W1; IGBT+ Diode; 30A; 1350V; 340W; Корпус: TO-247; ALPHA & OMEGA

на замовлення 9 шт:

термін постачання 2-3 дні (днів)

4+	214.58 грн

Мінімальне замовлення: 4

AOK30B60D

Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK30B60D

Description: IGBT 600V 60A 208W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 137 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/71ns
Switching Energy: 1.18mJ (on), 200µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 128 A
Power - Max: 278 W

товар відсутній

AOK30B60D

Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK30B60D1

Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK30B60D1

Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK30B60D1

Description: IGBT 600V 60A 208W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W

товар відсутній

AOK30B60D1

Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ

товар відсутній

AOK30B60D1

товар відсутній

AOK30B65M2

Description: IGBT 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 339 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 34ns/138ns
Switching Energy: 1.02mJ (on), 410µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 300 W

на замовлення 160 шт:

термін постачання 21-31 дні (днів)

1+	295.51 грн
10+	238.81 грн
100+	193.19 грн

AOK30B65M2

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247

товар відсутній

AOK30B65M2

товар відсутній

AOK30B65M2

Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK40B120H1

Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Turn-on time: 133ns
Turn-off time: 375ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ

на замовлення 33 шт:

термін постачання 21-30 дні (днів)

2+	326.84 грн
3+	273.08 грн
4+	199.4 грн
11+	187.91 грн

Мінімальне замовлення: 2

AOK40B120H1

на замовлення 33 шт:

термін постачання 7-14 дні (днів)

1+	392.21 грн
3+	340.29 грн
4+	239.28 грн
11+	225.49 грн

AOK40B120H1

1200V, 40A AlphaIGBT TM With Soft and Fast Recovery Anti-parallel Diode

товар відсутній

AOK40B120H1
Код товару: 175217

Транзистори > IGBT

товар відсутній

AOK40B120H1; IGBT+ Diode; 40A; 1200V; 500W; Корпус: TO-247; ALPHA & OMEGA

на замовлення 22 шт:

термін постачання 2-3 дні (днів)

3+	288.48 грн

Мінімальне замовлення: 3

AOK40B120M1

Description: IGBT 1200V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 90ns/226ns
Switching Energy: 3.87mJ (on), 1.25mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 600 W

товар відсутній

AOK40B120M1

Trans IGBT Chip N-CH 1200V 80A 600000mW 3-Pin(3+Tab) TO-247

товар відсутній

AOK40B120N1

Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode

товар відсутній

AOK40B120N1

Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode

товар відсутній

AOK40B120N1

Description: IGBT 1200V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 57ns/146ns
Switching Energy: 3.4mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W

товар відсутній

AOK40B120P1

Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode

товар відсутній

AOK40B120P1

Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 202 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
Td (on/off) @ 25°C: 53ns/210ns

товар відсутній

AOK40B120P1

Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode

товар відсутній

AOK40B60D

Trans IGBT Chip N-CH 600V 80A 312500mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK40B60D

Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK40B60D

Description: IGBT 600V 80A 312.5W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 138 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 28ns/77ns
Switching Energy: 1.72mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63.5 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 312.5 W

товар відсутній

AOK40B60D1

Trans IGBT Chip N-CH 600V 80A 278000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK40B60D1

Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.85V
Collector current: 40A
Turn-off switching energy: 0.3mJ
Mounting: THT
Turn-on switching energy: 1.55mJ
Collector-emitter voltage: 600V
Power dissipation: 111W
Gate charge: 45nC
Pulsed collector current: 140A
Type of transistor: IGBT
Turn-on time: 53ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт

на замовлення 166 шт:

термін постачання 7-14 дні (днів)

1+	295.25 грн
3+	256.06 грн
6+	183.31 грн
14+	172.77 грн

AOK40B60D1

Description: IGBT 600V 80A 278W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 127 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 29ns/74ns
Switching Energy: 1.55mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 278 W

на замовлення 184 шт:

термін постачання 21-31 дні (днів)

2+	273.75 грн
10+	221.43 грн
100+	179.11 грн

Мінімальне замовлення: 2

AOK40B60D1

на замовлення 166 шт:

термін постачання 21-30 дні (днів)

2+	246.04 грн
3+	205.48 грн
6+	152.76 грн
14+	143.97 грн

Мінімальне замовлення: 2

AOK40B65GQ1

Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode

товар відсутній

AOK40B65H1

Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 346 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 41ns/130ns
Switching Energy: 1.27mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W

на замовлення 45 шт:

термін постачання 21-31 дні (днів)

2+	268.84 грн
10+	217.38 грн

Мінімальне замовлення: 2

AOK40B65H1

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Turn-off time: 173ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.9V
Collector current: 40A
Turn-off switching energy: 0.46mJ
Mounting: THT
Turn-on switching energy: 1.27mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 82ns
Kind of package: tube
Case: TO247

товар відсутній

AOK40B65H1

Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK40B65H1

товар відсутній

AOK40B65H2AL

Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK40B65H2AL

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
кількість в упаковці: 1 шт

товар відсутній

AOK40B65H2AL

Description: IGBT 650V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 315 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W

товар відсутній

AOK40B65H2AL

товар відсутній

AOK40B65H2AL

Trans IGBT Chip N-CH 650V 80A 260mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK40B65H2AL_002

AOK40B65H2AL_002

на замовлення 32640 шт:

термін постачання 21-31 дні (днів)

240+	142.74 грн
8160+	131.06 грн
16320+	122.59 грн
24480+	112.08 грн

Мінімальне замовлення: 240

AOK40B65HQ1

Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W

товар відсутній

AOK40B65HQ2

Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W

товар відсутній

AOK40B65HQ3

Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W

товар відсутній

AOK40B65HQ3

Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode

товар відсутній

AOK40B65M3

Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 365 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 40ns/125ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 59 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W

на замовлення 10 шт:

термін постачання 21-31 дні (днів)

2+	266.73 грн
10+	215.69 грн

Мінімальне замовлення: 2

AOK40B65M3

Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK40N30L

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Drain current: 25A
Drain-source voltage: 300V
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
кількість в упаковці: 240 шт

товар відсутній

AOK40N30L

товар відсутній

AOK40N30L

Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V

товар відсутній

AOK40N30L

Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247

товар відсутній

AOK42S60L

Description: MOSFET N-CH 600V 39A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V

на замовлення 310 шт:

термін постачання 21-31 дні (днів)

1+	416.95 грн
10+	337.15 грн
100+	272.74 грн

AOK42S60L

Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247

товар відсутній

AOK50B60D1

Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 168A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 98ns
Turn-off time: 104ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 2.37mJ

на замовлення 122 шт:

термін постачання 21-30 дні (днів)

2+	249.68 грн
3+	204.81 грн
5+	185.21 грн
10+	184.53 грн
12+	175.07 грн
80+	171.69 грн

Мінімальне замовлення: 2

AOK50B60D1

Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK50B60D1

на замовлення 122 шт:

термін постачання 7-14 дні (днів)

1+	299.61 грн
3+	255.22 грн
5+	222.25 грн
10+	221.43 грн
12+	210.08 грн
80+	206.02 грн

AOK50B60D1

Description: IGBT 600V 100A 312W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/68ns
Switching Energy: 2.37mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 64 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 312 W

на замовлення 45 шт:

термін постачання 21-31 дні (днів)

1+	317.27 грн
30+	241.74 грн

AOK50B60D1

Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK50B65GL1

Description: IGBT 50A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 282ns/915ns
Switching Energy: 3.37mJ (on), 1.59mJ (off)
Test Condition: 300V, 50A, 100Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 312 W

товар відсутній

AOK50B65H1

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Turn-off time: 206ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.9V
Collector current: 50A
Turn-off switching energy: 0.85mJ
Mounting: THT
Turn-on switching energy: 1.92mJ
Collector-emitter voltage: 650V
Power dissipation: 188W
Gate charge: 76nC
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 111ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт

на замовлення 95 шт:

термін постачання 7-14 дні (днів)

1+	280.4 грн
3+	239.22 грн
5+	193.05 грн
14+	182.5 грн
240+	179.26 грн

AOK50B65H1

на замовлення 95 шт:

термін постачання 21-30 дні (днів)

2+	233.66 грн
3+	191.96 грн
5+	160.87 грн
14+	152.08 грн

Мінімальне замовлення: 2

AOK50B65H1

Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK50B65H1

Description: IGBT 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 261 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/141ns
Switching Energy: 1.92mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 375 W

товар відсутній

AOK50B65M2

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ
Turn-off time: 268ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.72V
Collector current: 50A
Turn-off switching energy: 1.03mJ
Mounting: THT
Turn-on switching energy: 2.09mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 102nC
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 114ns
Kind of package: tube
Case: TO247

товар відсутній

AOK50B65M2

Description: IGBT 650V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 327 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 46ns/182ns
Switching Energy: 2.09mJ (on), 1.03mJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 500 W

на замовлення 232 шт:

термін постачання 21-31 дні (днів)

1+	402.91 грн
10+	325.39 грн
100+	263.21 грн

AOK50B65M2

товар відсутній

AOK53S60

Description: MOSFET N-CH 600V 53A TO247

товар відсутній

AOK53S60

Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247

товар відсутній

AOK53S60

Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247

товар відсутній

AOK53S60L

Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247

товар відсутній

AOK53S60L

Description: MOSFET N-CH 600V 53A TO247

товар відсутній

AOK5N100

Description: MOSFET N-CH 1000V 4A TO247

товар відсутній

AOK5N100

Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247

товар відсутній

AOK5N100L

Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247

товар відсутній

AOK5N100L

Description: MOSFET N-CH 1000V 4A TO247

товар відсутній

AOK60B60D1

Trans IGBT Chip N-CH 600V 120A 417mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK60B60D1

Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 105ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.73mJ
Turn-on switching energy: 3.1mJ
кількість в упаковці: 1 шт

на замовлення 104 шт:

термін постачання 7-14 дні (днів)

1+	423.65 грн
3+	368.09 грн
4+	282.27 грн
10+	266.86 грн
240+	261.99 грн

AOK60B60D1

Description: IGBT 600V 120A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 137 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 32ns/74ns
Switching Energy: 3.1mJ (on), 730µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 417 W

товар відсутній

AOK60B60D1

Trans IGBT Chip N-CH 600V 120A 417000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK60B60D1

на замовлення 104 шт:

термін постачання 21-30 дні (днів)

2+	353.04 грн
3+	295.38 грн
4+	235.22 грн
10+	222.38 грн

Мінімальне замовлення: 2

AOK60B60D1; IGBT; With Diode; 60A; 600V; 417W; Корпус: TO-247; ALPHA & OMEGA

на замовлення 1 шт:

термін постачання 2-3 дні (днів)

1+	656.88 грн

AOK60B65H1

Description: IGBT 650V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 288 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 39ns/153ns
Switching Energy: 2.42mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W

товар відсутній

AOK60B65H1

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ
Turn-off time: 268ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.88V
Collector current: 60A
Turn-off switching energy: 1.17mJ
Mounting: THT
Turn-on switching energy: 2.42mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 90nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 118ns
Kind of package: tube
Case: TO247

на замовлення 19 шт:

термін постачання 21-30 дні (днів)

2+	302.82 грн
3+	252.8 грн
5+	183.85 грн
12+	173.71 грн

Мінімальне замовлення: 2

AOK60B65H1

на замовлення 19 шт:

термін постачання 7-14 дні (днів)

1+	363.38 грн
3+	315.03 грн
5+	220.62 грн
12+	208.46 грн

AOK60B65H2AL

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ
Turn-off time: 270ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.95V
Collector current: 60A
Turn-off switching energy: 1.17mJ
Mounting: THT
Turn-on switching energy: 2.36mJ
Collector-emitter voltage: 650V
Power dissipation: 166W
Gate charge: 84nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 113ns
Kind of package: tube
Case: TO247

на замовлення 209 шт:

термін постачання 21-30 дні (днів)

2+	191.44 грн
3+	159.52 грн
7+	116.26 грн
19+	109.5 грн

Мінімальне замовлення: 2

AOK60B65H2AL

на замовлення 209 шт:

термін постачання 7-14 дні (днів)

2+	229.73 грн
3+	198.79 грн
7+	139.51 грн
19+	131.4 грн

Мінімальне замовлення: 2

AOK60B65H2AL
Код товару: 173446

Мікросхеми > Інші мікросхеми

товар відсутній

AOK60B65H2AL

650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode

товар відсутній

AOK60B65H2AL

Description: IGBT 60A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 318 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 35ns/168ns
Switching Energy: 2.36mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W

товар відсутній

AOK60B65H2AL; IGBT+ Diode; 60A; 650V; 416W; Корпус: TO-247; ALPHA & OMEGA (IRGP4068D)

на замовлення 184 шт:

термін постачання 2-3 дні (днів)

5+	151.08 грн

Мінімальне замовлення: 5

AOK60B65HQ3

Description: IGBT 60A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/157ns
Switching Energy: 2.21mJ (on), 1.2mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W

товар відсутній

AOK60B65M3

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.3mJ; Eon: 2.6mJ
Turn-off time: 285ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.94V
Collector current: 60A
Turn-off switching energy: 1.3mJ
Mounting: THT
Turn-on switching energy: 2.6mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 106nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт

товар відсутній

AOK60B65M3

товар відсутній

AOK60B65M3

Description: IGBT 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 346 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 44ns/166ns
Switching Energy: 2.6mJ (on), 1.3mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 106 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W

товар відсутній

AOK60N30L

Trans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247

товар відсутній

AOK60N30L

Description: MOSFET N-CH 300V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V
Power Dissipation (Max): 658W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V

товар відсутній

AOK60N30L

Trans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247

товар відсутній

AOK66518

Medium Voltage MOSFETs (40V - 400V)

товар відсутній

AOK66613

Description: MOSFET N-CH 60V 58.5A/120A TO247

на замовлення 590 шт:

термін постачання 21-31 дні (днів)

1+	315.87 грн
10+	273.35 грн
100+	223.98 грн
500+	178.94 грн

AOK66613

60V N-Channel MOSFET

товар відсутній

AOK75B60D1

Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 290A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 155ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.3mJ
Turn-on switching energy: 3.7mJ
кількість в упаковці: 1 шт

на замовлення 145 шт:

термін постачання 7-14 дні (днів)

1+	462.09 грн
3+	325.98 грн
9+	296.87 грн
240+	295.25 грн

AOK75B60D1

на замовлення 145 шт:

термін постачання 21-30 дні (днів)

1+	385.07 грн
3+	261.59 грн
9+	247.39 грн

AOK75B60D1

Description: IGBT 600V 150A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 147 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 33ns/84ns
Switching Energy: 3.7mJ (on), 1.3mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 118 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 500 W

товар відсутній

AOK75B60D1

Trans IGBT Chip N-CH 600V 150A 600000mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOK75B65H1

Description: IGBT 650V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 295 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/175ns
Switching Energy: 3.77mJ (on), 2.04mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 556 W

товар відсутній

AOK75B65H1

Trans IGBT Chip N-CH 650V 150A 556W

товар відсутній

AOK75B65H1

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ
Turn-off time: 319ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.85V
Collector current: 75A
Turn-off switching energy: 2.04mJ
Mounting: THT
Turn-on switching energy: 3.77mJ
Collector-emitter voltage: 650V
Power dissipation: 278W
Gate charge: 109nC
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт

товар відсутній

AOK75B65H1

товар відсутній

AOK8N80

Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247

товар відсутній

AOK8N80

Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V

товар відсутній

AOK8N80L

товар відсутній

AOK8N80L

Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247

товар відсутній

AOK9N90

Description: MOSFET N-CH 900V 9A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V

товар відсутній

AOK9N90

Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-247 Tube

на замовлення 9600 шт:

термін постачання 21-31 дні (днів)

2+	152.92 грн

Мінімальне замовлення: 2

AOKS30B60D1

Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W

на замовлення 21 шт:

термін постачання 21-31 дні (днів)

2+	190.22 грн

Мінімальне замовлення: 2

AOKS30B60D1

Trans IGBT Chip N-CH 600V 60A 208mW 3-Pin(3+Tab) TO-247 Tube

товар відсутній

AOKS40B60D1

Description: IGBT 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 29ns/74ns
Switching Energy: 1.55mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 45 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 278 W

на замовлення 14 шт:

термін постачання 21-31 дні (днів)

2+	240.76 грн
10+	194.26 грн

Мінімальне замовлення: 2

AOKS40B65H1

Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 41ns/130ns
Switching Energy: 1.27mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W

товар відсутній

AOKS40B65H2AL

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Turn-off time: 151ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.05V
Collector current: 40A
Turn-off switching energy: 0.54mJ
Mounting: THT
Turn-on switching energy: 1.17mJ
Collector-emitter voltage: 650V
Power dissipation: 105W
Gate charge: 61nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт

товар відсутній

AOKS40B65H2AL

AOKS40B65H2AL

товар відсутній

AOKS40B65H2AL

Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W

товар відсутній

AOKS40B65H2AL