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AOK040A60Alpha & Omega SemiconductorHigh Voltage MOSFETs (500V - 1000V)
товар відсутній
AOK060V65X2Alpha & Omega SemiconductorAOK060V65X2
товар відсутній
AOK095A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 38A TO247
на замовлення 729 шт:
термін постачання 21-31 дні (днів)
1+429.46 грн
10+ 371.04 грн
100+ 304 грн
500+ 242.86 грн
AOK095A60Alpha & Omega SemiconductorN Channel Power Transistor
товар відсутній
AOK10B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK10B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 20A 163W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 10ns/72ns
Switching Energy: 260µJ (on), 70µJ (off)
Test Condition: 400V, 10A, 30Ohm, 15V
Gate Charge: 17.4 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 163 W
товар відсутній
AOK10N90Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 900V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
товар відсутній
AOK10N90Alpha & Omega SemiconductorTrans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK125A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
1+380.48 грн
10+ 329.34 грн
AOK15B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK15B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 30A 167W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 196 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 23ns/74ns
Switching Energy: 510µJ (on), 110µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 25.4 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 167 W
товар відсутній
AOK160A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 24A TO247
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+325.82 грн
10+ 282.24 грн
100+ 231.26 грн
AOK160A60Alpha & Omega SemiconductorN Channel Power Transistor
товар відсутній
AOK18N65LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
товар відсутній
AOK20B120D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)
1+330.38 грн
3+ 286.21 грн
5+ 218.19 грн
12+ 205.89 грн
240+ 204.25 грн
AOK20B120D1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/152ns
Switching Energy: 940µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 67.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 340 W
товар відсутній
AOK20B120D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK20B120D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
2+275.32 грн
3+ 229.68 грн
Мінімальне замовлення: 2
AOK20B120E1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK20B120E1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
товар відсутній
AOK20B120E1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
кількість в упаковці: 240 шт
товар відсутній
AOK20B120E1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/134ns
Switching Energy: 830µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 60.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 333 W
товар відсутній
AOK20B120E2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
кількість в упаковці: 1 шт
товар відсутній
AOK20B120E2Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/123ns
Switching Energy: 820µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 53.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 250 W
товар відсутній
AOK20B120E2Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK20B120E2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
товар відсутній
AOK20B135D1Alpha & Omega Semiconductor Inc.Description: IGBT 1350V 40A 340W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/156ns
Switching Energy: 1.05mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 66 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 340 W
на замовлення 223 шт:
термін постачання 21-31 дні (днів)
1+288.2 грн
30+ 219.95 грн
120+ 188.54 грн
AOK20B135D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK20B135D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+216.43 грн
3+ 181.14 грн
6+ 131.93 грн
17+ 125.09 грн
Мінімальне замовлення: 2
AOK20B135D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)
2+259.71 грн
3+ 225.73 грн
6+ 158.31 грн
17+ 150.11 грн
Мінімальне замовлення: 2
AOK20B135E1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
Turn-off time: 311ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.2V
Collector current: 20A
Turn-off switching energy: 1.26mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 125W
Gate charge: 58nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
3+129.19 грн
Мінімальне замовлення: 3
AOK20B135E1Alpha & Omega Semiconductor Inc.Description: IGBT 1350V 20A 340W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/134ns
Switching Energy: 800µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 250 W
товар відсутній
AOK20B135E1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK20B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 40A 180W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/66ns
Switching Energy: 760µJ (on), 180µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 24.6 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 74 A
Power - Max: 167 W
товар відсутній
AOK20B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
кількість в упаковці: 1 шт
на замовлення 228 шт:
термін постачання 7-14 дні (днів)
2+207.59 грн
3+ 180.59 грн
8+ 128.78 грн
21+ 121.4 грн
Мінімальне замовлення: 2
AOK20B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK20B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
3+144.91 грн
8+ 107.32 грн
21+ 101.17 грн
Мінімальне замовлення: 3
AOK20B65M1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
кількість в упаковці: 240 шт
товар відсутній
AOK20B65M1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK20B65M1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
товар відсутній
AOK20B65M1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 322 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/122ns
Switching Energy: 470µJ (on), 270µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W
товар відсутній
AOK20B65M2Alpha & Omega Semiconductor Inc.Description: IGBT 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 292 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/123ns
Switching Energy: 580µJ (on), 280µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
2+244.9 грн
10+ 197.89 грн
100+ 160.08 грн
Мінімальне замовлення: 2
AOK20B65M2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
кількість в упаковці: 1 шт
товар відсутній
AOK20B65M2Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK20B65M2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
товар відсутній
AOK20N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
2+271.87 грн
30+ 207.51 грн
120+ 177.87 грн
Мінімальне замовлення: 2
AOK20N60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
AOK20S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
товар відсутній
AOK20S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
товар відсутній
AOK22N50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
товар відсутній
AOK2500LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 14A/180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
на замовлення 263 шт:
термін постачання 21-31 дні (днів)
1+405.32 грн
10+ 350.53 грн
100+ 287.2 грн
AOK27S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
товар відсутній
AOK29S50LAlpha & Omega SemiconductorTrans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK29S50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 29A TO247
товар відсутній
AOK30B120D2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
кількість в упаковці: 1 шт
товар відсутній
AOK30B120D2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
товар відсутній
AOK30B120D2Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/115ns
Switching Energy: 1.28mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 340 W
товар відсутній
AOK30B120D2Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK30B135D2Alpha & Omega Semiconductor Inc.Description: IGBT 1350V 30A TO-247
товар відсутній
AOK30B135W1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
товар відсутній
AOK30B135W1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK30B135W1Alpha & Omega Semiconductor Inc.Description: IGBT 1350V 30A 170W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/129ns
Switching Energy: 1.47mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 340 W
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
1+291.75 грн
30+ 222.64 грн
120+ 190.82 грн
AOK30B135W1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
кількість в упаковці: 1 шт
товар відсутній
AOK30B135W1; IGBT+ Diode; 30A; 1350V; 340W; Корпус: TO-247; ALPHA & OMEGA
на замовлення 9 шт:
термін постачання 2-3 дні (днів)
4+212.39 грн
Мінімальне замовлення: 4
AOK30B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK30B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK30B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 60A 208W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 137 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/71ns
Switching Energy: 1.18mJ (on), 200µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 128 A
Power - Max: 278 W
товар відсутній
AOK30B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
кількість в упаковці: 1 шт
товар відсутній
AOK30B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
товар відсутній
AOK30B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK30B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK30B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 60A 208W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W
товар відсутній
AOK30B65M2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
товар відсутній
AOK30B65M2Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK30B65M2Alpha & Omega Semiconductor Inc.Description: IGBT 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 339 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 34ns/138ns
Switching Energy: 1.02mJ (on), 410µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 300 W
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+298.85 грн
10+ 241.5 грн
100+ 195.37 грн
AOK30B65M2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOK40B120H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Turn-on time: 133ns
Turn-off time: 375ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 7-14 дні (днів)
1+396.63 грн
3+ 344.14 грн
4+ 241.98 грн
11+ 228.04 грн
AOK40B120H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Turn-on time: 133ns
Turn-off time: 375ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
2+330.53 грн
3+ 276.16 грн
4+ 201.65 грн
11+ 190.03 грн
Мінімальне замовлення: 2
AOK40B120H1Alpha & Omega Semiconductor1200V, 40A AlphaIGBT TM With Soft and Fast Recovery Anti-parallel Diode
товар відсутній
AOK40B120H1
Код товару: 175217
Транзистори > IGBT
товар відсутній
AOK40B120H1; IGBT+ Diode; 40A; 1200V; 500W; Корпус: TO-247; ALPHA & OMEGA
на замовлення 22 шт:
термін постачання 2-3 дні (днів)
3+285.53 грн
Мінімальне замовлення: 3
AOK40B120M1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 90ns/226ns
Switching Energy: 3.87mJ (on), 1.25mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 600 W
товар відсутній
AOK40B120M1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1200V 80A 600000mW 3-Pin(3+Tab) TO-247
товар відсутній
AOK40B120N1Alpha & Omega SemiconductorAlpha IGBT With Soft and Fast Recovery Anti Parallel Diode
товар відсутній
AOK40B120N1Alpha & Omega SemiconductorAlpha IGBT With Soft and Fast Recovery Anti Parallel Diode
товар відсутній
AOK40B120N1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 57ns/146ns
Switching Energy: 3.4mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
товар відсутній
AOK40B120P1Alpha & Omega SemiconductorAlpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
AOK40B120P1Alpha & Omega Semiconductor Inc.Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 202 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
Td (on/off) @ 25°C: 53ns/210ns
товар відсутній
AOK40B120P1Alpha & Omega SemiconductorAlpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
AOK40B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 80A 312500mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK40B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK40B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 80A 312.5W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 138 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 28ns/77ns
Switching Energy: 1.72mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63.5 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 312.5 W
товар відсутній
AOK40B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.85V
Collector current: 40A
Turn-off switching energy: 0.3mJ
Mounting: THT
Turn-on switching energy: 1.55mJ
Collector-emitter voltage: 600V
Power dissipation: 111W
Gate charge: 45nC
Pulsed collector current: 140A
Type of transistor: IGBT
Turn-on time: 53ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
на замовлення 166 шт:
термін постачання 7-14 дні (днів)
1+298.58 грн
3+ 258.95 грн
6+ 185.38 грн
14+ 174.72 грн
AOK40B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Turn-off time: 102ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.85V
Collector current: 40A
Turn-off switching energy: 0.3mJ
Mounting: THT
Turn-on switching energy: 1.55mJ
Collector-emitter voltage: 600V
Power dissipation: 111W
Gate charge: 45nC
Pulsed collector current: 140A
Type of transistor: IGBT
Turn-on time: 53ns
Kind of package: tube
Case: TO247
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
2+248.82 грн
3+ 207.8 грн
6+ 154.48 грн
14+ 145.6 грн
Мінімальне замовлення: 2
AOK40B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 80A 278W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 127 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 29ns/74ns
Switching Energy: 1.55mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 278 W
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
2+276.84 грн
10+ 223.93 грн
100+ 181.14 грн
Мінімальне замовлення: 2
AOK40B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 80A 278000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK40B65GQ1Alpha & Omega SemiconductorAlpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
AOK40B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Turn-off time: 173ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.9V
Collector current: 40A
Turn-off switching energy: 0.46mJ
Mounting: THT
Turn-on switching energy: 1.27mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 82ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOK40B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Turn-off time: 173ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.9V
Collector current: 40A
Turn-off switching energy: 0.46mJ
Mounting: THT
Turn-on switching energy: 1.27mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 82ns
Kind of package: tube
Case: TO247
товар відсутній
AOK40B65H1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK40B65H1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 346 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 41ns/130ns
Switching Energy: 1.27mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
2+271.87 грн
10+ 219.83 грн
Мінімальне замовлення: 2
AOK40B65H2ALAlpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK40B65H2ALALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
кількість в упаковці: 1 шт
товар відсутній
AOK40B65H2ALALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
товар відсутній
AOK40B65H2ALAlpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 80A 260mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK40B65H2ALAlpha & Omega Semiconductor Inc.Description: IGBT 650V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 315 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товар відсутній
AOK40B65H2AL_002Alpha & Omega SemiconductorAOK40B65H2AL_002
на замовлення 32640 шт:
термін постачання 21-31 дні (днів)
240+141.28 грн
8160+ 129.72 грн
16320+ 121.33 грн
24480+ 110.94 грн
Мінімальне замовлення: 240
AOK40B65HQ1Alpha & Omega Semiconductor Inc.Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
товар відсутній
AOK40B65HQ2Alpha & Omega Semiconductor Inc.Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
товар відсутній
AOK40B65HQ3Alpha & Omega SemiconductorAlpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
AOK40B65HQ3Alpha & Omega Semiconductor Inc.Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
товар відсутній
AOK40B65M3Alpha & Omega Semiconductor Inc.Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 365 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 40ns/125ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 59 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
2+269.74 грн
10+ 218.12 грн
Мінімальне замовлення: 2
AOK40B65M3Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK40N30LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Drain current: 25A
Drain-source voltage: 300V
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
кількість в упаковці: 240 шт
товар відсутній
AOK40N30LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Drain current: 25A
Drain-source voltage: 300V
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
товар відсутній
AOK40N30LAlpha & Omega SemiconductorTrans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247
товар відсутній
AOK40N30LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
товар відсутній
AOK42S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 39A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
на замовлення 310 шт:
термін постачання 21-31 дні (днів)
1+421.65 грн
10+ 340.96 грн
100+ 275.82 грн
AOK42S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247
товар відсутній
AOK50B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK50B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK50B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
Turn-off time: 104ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.85V
Collector current: 50A
Turn-off switching energy: 0.5mJ
Mounting: THT
Turn-on switching energy: 2.37mJ
Collector-emitter voltage: 600V
Power dissipation: 125W
Gate charge: 64nC
Pulsed collector current: 168A
Type of transistor: IGBT
Turn-on time: 98ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
на замовлення 198 шт:
термін постачання 7-14 дні (днів)
1+318.9 грн
3+ 271.73 грн
5+ 223.93 грн
12+ 211.63 грн
AOK50B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
Turn-off time: 104ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.85V
Collector current: 50A
Turn-off switching energy: 0.5mJ
Mounting: THT
Turn-on switching energy: 2.37mJ
Collector-emitter voltage: 600V
Power dissipation: 125W
Gate charge: 64nC
Pulsed collector current: 168A
Type of transistor: IGBT
Turn-on time: 98ns
Kind of package: tube
Case: TO247
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
2+265.75 грн
3+ 218.06 грн
5+ 186.61 грн
12+ 176.36 грн
Мінімальне замовлення: 2
AOK50B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 100A 312W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/68ns
Switching Energy: 2.37mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 64 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 312 W
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
1+328.66 грн
10+ 265.43 грн
AOK50B65GL1Alpha & Omega Semiconductor Inc.Description: IGBT 50A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 282ns/915ns
Switching Energy: 3.37mJ (on), 1.59mJ (off)
Test Condition: 300V, 50A, 100Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 312 W
товар відсутній
AOK50B65H1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 261 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 37ns/141ns
Switching Energy: 1.92mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 375 W
товар відсутній
AOK50B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Turn-off time: 206ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.9V
Collector current: 50A
Turn-off switching energy: 0.85mJ
Mounting: THT
Turn-on switching energy: 1.92mJ
Collector-emitter voltage: 650V
Power dissipation: 188W
Gate charge: 76nC
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 111ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
на замовлення 95 шт:
термін постачання 7-14 дні (днів)
1+283.56 грн
3+ 241.92 грн
5+ 195.22 грн
14+ 184.56 грн
240+ 181.28 грн
AOK50B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Turn-off time: 206ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.9V
Collector current: 50A
Turn-off switching energy: 0.85mJ
Mounting: THT
Turn-on switching energy: 1.92mJ
Collector-emitter voltage: 650V
Power dissipation: 188W
Gate charge: 76nC
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 111ns
Kind of package: tube
Case: TO247
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
2+236.3 грн
3+ 194.13 грн
5+ 162.69 грн
14+ 153.8 грн
Мінімальне замовлення: 2
AOK50B65H1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK50B65M2Alpha & Omega Semiconductor Inc.Description: IGBT 650V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 327 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 46ns/182ns
Switching Energy: 2.09mJ (on), 1.03mJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 500 W
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
1+407.45 грн
10+ 329.07 грн
100+ 266.18 грн
AOK50B65M2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ
Turn-off time: 268ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.72V
Collector current: 50A
Turn-off switching energy: 1.03mJ
Mounting: THT
Turn-on switching energy: 2.09mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 102nC
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 114ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOK50B65M2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ
Turn-off time: 268ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.72V
Collector current: 50A
Turn-off switching energy: 1.03mJ
Mounting: THT
Turn-on switching energy: 2.09mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 102nC
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 114ns
Kind of package: tube
Case: TO247
товар відсутній
AOK53S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
товар відсутній
AOK53S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 53A TO247
товар відсутній
AOK53S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
товар відсутній
AOK53S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
товар відсутній
AOK53S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 53A TO247
товар відсутній
AOK5N100Alpha & Omega SemiconductorTrans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247
товар відсутній
AOK5N100Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 1000V 4A TO247
товар відсутній
AOK5N100LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 1000V 4A TO247
товар відсутній
AOK5N100LAlpha & Omega SemiconductorTrans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247
товар відсутній
AOK60B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 120A 417mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK60B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 120A 417000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK60B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 105ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.73mJ
Turn-on switching energy: 3.1mJ
кількість в упаковці: 1 шт
на замовлення 104 шт:
термін постачання 7-14 дні (днів)
1+428.43 грн
3+ 372.25 грн
4+ 285.45 грн
10+ 269.87 грн
240+ 264.95 грн
AOK60B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 105ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.73mJ
Turn-on switching energy: 3.1mJ
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
2+357.03 грн
3+ 298.72 грн
4+ 237.88 грн
10+ 224.89 грн
Мінімальне замовлення: 2
AOK60B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 120A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 137 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 32ns/74ns
Switching Energy: 3.1mJ (on), 730µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 417 W
товар відсутній
AOK60B60D1; IGBT; With Diode; 60A; 600V; 417W; Корпус: TO-247; ALPHA & OMEGA
на замовлення 1 шт:
термін постачання 2-3 дні (днів)
1+650.16 грн
AOK60B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ
Turn-off time: 268ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.88V
Collector current: 60A
Turn-off switching energy: 1.17mJ
Mounting: THT
Turn-on switching energy: 2.42mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 90nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 118ns
Kind of package: tube
Case: TO247
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
2+306.23 грн
3+ 255.65 грн
5+ 185.93 грн
12+ 175.67 грн
Мінімальне замовлення: 2
AOK60B65H1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 288 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 39ns/153ns
Switching Energy: 2.42mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
товар відсутній
AOK60B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ
Turn-off time: 268ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.88V
Collector current: 60A
Turn-off switching energy: 1.17mJ
Mounting: THT
Turn-on switching energy: 2.42mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 90nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 118ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 7-14 дні (днів)
1+367.48 грн
3+ 318.58 грн
5+ 223.11 грн
12+ 210.81 грн
AOK60B65H2ALAlpha & Omega Semiconductor650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
4+92.06 грн
Мінімальне замовлення: 4
AOK60B65H2ALALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ
Turn-off time: 270ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.95V
Collector current: 60A
Turn-off switching energy: 1.17mJ
Mounting: THT
Turn-on switching energy: 2.36mJ
Collector-emitter voltage: 650V
Power dissipation: 166W
Gate charge: 84nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 113ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
на замовлення 209 шт:
термін постачання 7-14 дні (днів)
2+232.33 грн
3+ 201.03 грн
7+ 141.09 грн
19+ 132.88 грн
Мінімальне замовлення: 2
AOK60B65H2AL
Код товару: 173446
Мікросхеми > Інші мікросхеми
товар відсутній
AOK60B65H2ALALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ
Turn-off time: 270ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.95V
Collector current: 60A
Turn-off switching energy: 1.17mJ
Mounting: THT
Turn-on switching energy: 2.36mJ
Collector-emitter voltage: 650V
Power dissipation: 166W
Gate charge: 84nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 113ns
Kind of package: tube
Case: TO247
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
2+193.61 грн
3+ 161.32 грн
7+ 117.57 грн
19+ 110.74 грн
Мінімальне замовлення: 2
AOK60B65H2ALAlpha & Omega Semiconductor Inc.Description: IGBT 60A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 318 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 35ns/168ns
Switching Energy: 2.36mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
товар відсутній
AOK60B65H2AL; IGBT+ Diode; 60A; 650V; 416W; Корпус: TO-247; ALPHA & OMEGA (IRGP4068D)
на замовлення 184 шт:
термін постачання 2-3 дні (днів)
5+149.54 грн
Мінімальне замовлення: 5
AOK60B65HQ3Alpha & Omega Semiconductor Inc.Description: IGBT 60A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/157ns
Switching Energy: 2.21mJ (on), 1.2mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
товар відсутній
AOK60B65M3ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.3mJ; Eon: 2.6mJ
Turn-off time: 285ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.94V
Collector current: 60A
Turn-off switching energy: 1.3mJ
Mounting: THT
Turn-on switching energy: 2.6mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 106nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247
товар відсутній
AOK60B65M3ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.3mJ; Eon: 2.6mJ
Turn-off time: 285ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.94V
Collector current: 60A
Turn-off switching energy: 1.3mJ
Mounting: THT
Turn-on switching energy: 2.6mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 106nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOK60B65M3Alpha & Omega Semiconductor Inc.Description: IGBT 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 346 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 44ns/166ns
Switching Energy: 2.6mJ (on), 1.3mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 106 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
товар відсутній
AOK60N30LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 300V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V
Power Dissipation (Max): 658W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
товар відсутній
AOK60N30LAlpha & Omega SemiconductorTrans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247
товар відсутній
AOK60N30LAlpha & Omega SemiconductorTrans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247
товар відсутній
AOK66518Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
товар відсутній
AOK66613Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 58.5A/120A TO247
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
1+319.43 грн
10+ 276.43 грн
100+ 226.51 грн
500+ 180.96 грн
AOK66613Alpha & Omega Semiconductor60V N-Channel MOSFET
товар відсутній
AOK75B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 290A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 155ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.3mJ
Turn-on switching energy: 3.7mJ
кількість в упаковці: 1 шт
на замовлення 145 шт:
термін постачання 7-14 дні (днів)
1+467.3 грн
3+ 329.65 грн
9+ 300.22 грн
240+ 298.58 грн
AOK75B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 150A 600000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK75B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 150A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 147 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 33ns/84ns
Switching Energy: 3.7mJ (on), 1.3mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 118 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 500 W
товар відсутній
AOK75B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 290A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 155ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.3mJ
Turn-on switching energy: 3.7mJ
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
1+389.42 грн
3+ 264.54 грн
9+ 250.18 грн
AOK75B65H1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 150A 556W
товар відсутній
AOK75B65H1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 295 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/175ns
Switching Energy: 3.77mJ (on), 2.04mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 556 W
товар відсутній
AOK75B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ
Turn-off time: 319ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.85V
Collector current: 75A
Turn-off switching energy: 2.04mJ
Mounting: THT
Turn-on switching energy: 3.77mJ
Collector-emitter voltage: 650V
Power dissipation: 278W
Gate charge: 109nC
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247
товар відсутній
AOK75B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ
Turn-off time: 319ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.85V
Collector current: 75A
Turn-off switching energy: 2.04mJ
Mounting: THT
Turn-on switching energy: 3.77mJ
Collector-emitter voltage: 650V
Power dissipation: 278W
Gate charge: 109nC
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOK8N80Alpha & Omega SemiconductorTrans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247
товар відсутній
AOK8N80Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товар відсутній
AOK8N80LAlpha & Omega SemiconductorTrans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247
товар відсутній
AOK8N80LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товар відсутній
AOK9N90Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 900V 9A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
товар відсутній
AOK9N90Alpha & Omega SemiconductorTrans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-247 Tube
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
2+154.65 грн
Мінімальне замовлення: 2
AOKS30B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 60A 208mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOKS30B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
2+192.37 грн
Мінімальне замовлення: 2
AOKS40B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 29ns/74ns
Switching Energy: 1.55mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 45 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 278 W
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
2+243.48 грн
10+ 196.46 грн
Мінімальне замовлення: 2
AOKS40B65H1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 41ns/130ns
Switching Energy: 1.27mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
товар відсутній
AOKS40B65H2ALAlpha & Omega SemiconductorAOKS40B65H2AL
товар відсутній
AOKS40B65H2ALALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Turn-off time: 151ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.05V
Collector current: 40A
Turn-off switching energy: 0.54mJ
Mounting: THT
Turn-on switching energy: 1.17mJ
Collector-emitter voltage: 650V
Power dissipation: 105W
Gate charge: 61nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247
товар відсутній
AOKS40B65H2ALALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Turn-off time: 151ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.05V
Collector current: 40A
Turn-off switching energy: 0.54mJ
Mounting: THT
Turn-on switching energy: 1.17mJ
Collector-emitter voltage: 650V
Power dissipation: 105W
Gate charge: 61nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOKS40B65H2ALAlpha & Omega Semiconductor Inc.Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товар відсутній