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2N5089G 2N5089G onsemi 2N5088-D.pdf Description: TRANS NPN 25V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
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2N5191G 2N5191G onsemi 2N5191-D.PDF Description: TRANS NPN 60V 4A TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 2MHz
на замовлення 2110 шт:
термін постачання 21-31 дні (днів)
4+95.53 грн
10+57.89 грн
100+38.39 грн
500+28.17 грн
1000+25.63 грн
2000+23.50 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2N5192G 2N5192G onsemi 2N5191-D.PDF Description: TRANS NPN 80V 4A TO-126
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-126
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
на замовлення 5351 шт:
термін постачання 21-31 дні (днів)
4+103.29 грн
10+62.82 грн
100+41.81 грн
500+30.78 грн
1000+28.06 грн
2000+25.77 грн
5000+22.91 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2N5195G 2N5195G onsemi 2N5194-D.PDF Description: TRANS PNP 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
на замовлення 1595 шт:
термін постачання 21-31 дні (днів)
4+96.30 грн
10+58.86 грн
100+39.05 грн
500+28.67 грн
1000+26.10 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2N5302G 2N5302G onsemi 2n5302-d.pdf Description: TRANS NPN 60V 30A TO204
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 5mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
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2N5401RLRAG 2N5401RLRAG onsemi 2N5401-D.PDF Description: TRANS PNP 150V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
товару немає в наявності
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2N5457G 2N5457G onsemi 2N5457-D.PDF Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N5458G 2N5458G onsemi 2N5457-D.PDF Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N5460G 2N5460G onsemi 2N5460-D.PDF Description: JFET P-CH 40V TO92
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2N5461G 2N5461G onsemi 2N5460-D.PDF Description: JFET P-CH 40V TO92
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N5486G 2N5486G onsemi 2N5486-D.PDF Description: RF MOSFET JFET 25V TO92
Mounting Type: Through Hole
Current Rating (Amps): 30mA
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Voltage - Rated: 25 V
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Technology: JFET
Configuration: N-Channel
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N5550G 2N5550G onsemi 2N5550-D.PDF Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
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2N5551RLRAG 2N5551RLRAG onsemi 2n5551t-d.pdf Description: TRANS NPN 160V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
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2N5655G 2N5655G onsemi 2N5655-D.PDF Description: TRANS NPN 250V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
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2N5657G 2N5657G onsemi 2n5655-d.pdf Description: TRANS NPN 350V 0.5A TO126
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-126
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N5684G 2N5684G onsemi 2N5684-D.PDF Description: TRANS PNP 80V 50A TO204
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tray
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
1+1132.33 грн
10+772.85 грн
100+593.52 грн
В кошику  од. на суму  грн.
2N5686G 2N5686G onsemi 2N5684-D.PDF Description: TRANS NPN 80V 50A TO204
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tray
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2N5883G 2N5883G onsemi 2n5883-d.pdf Description: TRANS PNP 60V 25A TO204
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 25 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
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2N5884G 2N5884G onsemi 2n5883-d.pdf Description: TRANS PNP 80V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 25 A
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
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2N5885G 2N5885G onsemi 2n5883-d.pdf Description: TRANS NPN 60V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 25 A
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2N5886G 2N5886G onsemi 2N5883-D.PDF Description: TRANS NPN 80V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Current - Collector (Ic) (Max): 25 A
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 80 V
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2N6027RLRAG 2N6027RLRAG onsemi 2N6027-D.PDF Description: PROGRAMMABLE UJT 40V TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 11V
Voltage: 40V
Current - Peak: 2 µA
Voltage - Offset (Vt): 1.6 V
Current - Valley (Iv): 50 µA
Part Status: Obsolete
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028RLRAG 2N6028RLRAG onsemi Description: PROGRAMMABLE UJT 40V TO92
Power Dissipation (Max): 300 mW
Current - Gate to Anode Leakage (Igao): 10 nA
Part Status: Obsolete
Current - Valley (Iv): 25 µA
Voltage - Offset (Vt): 600 mV
Current - Peak: 150 nA
Voltage: 40V
Voltage - Output: 11V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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2N6034G 2N6034G onsemi 2n6035-d.pdf Description: TRANS PNP DARL 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N6036G 2N6036G onsemi 2N6035-D.PDF Description: TRANS PNP DARL 80V 4A TO-126
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N6038G 2N6038G onsemi 2N6035-D.PDF description Description: TRANS NPN DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N6039G 2N6039G onsemi 2n6035-d.pdf Description: TRANS NPN DARL 80V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N6040G 2N6040G onsemi 2n6040-d.pdf Description: TRANS PNP DARL 60V 8A TO220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
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2N6042G 2N6042G onsemi 2n6040-d.pdf Description: TRANS PNP DARL 100V 8A TO220
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
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2N6043G 2N6043G onsemi 2n6040-d.pdf Description: TRANS NPN DARL 60V 8A TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
на замовлення 1133 шт:
термін постачання 21-31 дні (днів)
3+105.62 грн
50+48.04 грн
100+42.83 грн
500+31.60 грн
1000+28.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2N6045G 2N6045G onsemi 2n6040-d.pdf Description: TRANS NPN DARL 100V 8A TO-220
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
3+105.62 грн
50+48.09 грн
100+42.86 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2N6052G 2N6052G onsemi 2n6052-d.pdf Description: TRANS PNP DARL 100V 12A TO204
Packaging: Tray
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 12 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
товару немає в наявності
В кошику  од. на суму  грн.
2N6107G 2N6107G onsemi 2n6107-d.pdf Description: TRANS PNP 70V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
2N6109G 2N6109G onsemi 2n6107-d.pdf Description: TRANS PNP 50V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
товару немає в наявності
В кошику  од. на суму  грн.
2N6111G 2N6111G onsemi 2n6107-d.pdf Description: TRANS PNP 30V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
2N6284G 2N6284G onsemi 2N6284-D.PDF Description: TRANS NPN DARL 100V 20A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
на замовлення 2112 шт:
термін постачання 21-31 дні (днів)
1+494.72 грн
10+322.56 грн
100+235.27 грн
500+186.00 грн
В кошику  од. на суму  грн.
2N6292G 2N6292G onsemi 2n6107-d.pdf description Description: TRANS NPN 70V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1281 шт:
термін постачання 21-31 дні (днів)
3+107.18 грн
50+49.03 грн
100+43.71 грн
500+32.26 грн
1000+29.44 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2N6388G 2N6388G onsemi 2n6387-d.pdf Description: TRANS NPN DARL 80V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)
4+102.52 грн
50+46.70 грн
100+41.60 грн
500+30.65 грн
1000+27.95 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2N6426G 2N6426G onsemi 2n6426-d.pdf Description: TRANS NPN DARL 40V 0.5A TO92
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
товару немає в наявності
В кошику  од. на суму  грн.
2N6427G 2N6427G onsemi 2n6426-d.pdf Description: TRANS NPN DARL 40V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
2N6488G 2N6488G onsemi 2N6487-D.PDF Description: TRANS NPN 80V 15A TO-220
Power - Max: 1.8 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
3+150.67 грн
50+70.14 грн
100+62.89 грн
500+47.08 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2N6491G 2N6491G onsemi 2N6487-D.PDF description Description: TRANS PNP 80V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.8 W
на замовлення 585 шт:
термін постачання 21-31 дні (днів)
2+164.65 грн
50+77.39 грн
100+69.51 грн
500+52.25 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
2N6497G 2N6497G onsemi 2n6497-d.pdf Description: TRANS NPN 250V 5A TO-220
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 10V
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 80 W
товару немає в наявності
В кошику  од. на суму  грн.
2N6517G 2N6517G onsemi 2N6515-D.PDF Description: TRANS NPN 350V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
2N6520RLRAG 2N6520RLRAG onsemi 2N6515-D.PDF description Description: TRANS PNP 350V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N6667G 2N6667G onsemi 2n6667-d.pdf Description: TRANS PNP DARL 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
2N7000RLRAG 2N7000RLRAG onsemi NDS7002A-D.PDF Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
2N7002LT1G 2N7002LT1G onsemi 2N7002L-D.PDF Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAL99LT1G BAL99LT1G onsemi bal99lt1-d.pdf Description: DIODE STANDARD 70V 100MA SOT233
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
3000+1.79 грн
6000+1.64 грн
9000+1.63 грн
15000+1.52 грн
21000+1.42 грн
30000+1.30 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS116LT1G BAS116LT1G onsemi BAS116LT1-D.PDF Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
3000+1.92 грн
6000+1.65 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS16DXV6T1G BAS16DXV6T1G onsemi BAS16DXV6-D.PDF Description: DIODE ARRAY GP 75V 200MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
4000+4.50 грн
8000+3.92 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
BAS16HT1G BAS16HT1G onsemi BAS16HT1-D.PDF Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS16LT1G BAS16LT1G onsemi BAS16LT1-D.PDF Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
 Мінімальне замовлення: 160 шт
В кошику  од. на суму  грн.
BAS16WT1G BAS16WT1G onsemi BAS16WT1-D.PDF Description: DIODE STANDARD 100V 200MA SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+1.57 грн
6000+1.34 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS16XV2T1G BAS16XV2T1G onsemi bas16xv2t1-d.pdf Description: DIODE STANDARD 100V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS19LT1G BAS19LT1G onsemi BAS19LT1-D.PDF Description: DIODE STANDARD 120V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 97080 шт:
термін постачання 21-31 дні (днів)
3000+1.62 грн
6000+1.38 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS20LT1G BAS20LT1G onsemi BAS19LT1-D.PDF Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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BAS21DW5T1G BAS21DW5T1G onsemi BAS19LT1-D.PDF Description: DIODE ARRAY GP 250V 200MA SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+2.99 грн
6000+2.57 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS21HT1G BAS21HT1G onsemi BAS21HT1-D.PDF Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS21LT1G BAS21LT1G onsemi BAS19LT1-D.PDF Description: DIODE STANDARD 250V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
3000+1.79 грн
6000+1.53 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2N5089G 2N5088-D.pdf
2N5089G
Виробник: onsemi
Description: TRANS NPN 25V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товару немає в наявності
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2N5191G 2N5191-D.PDF
2N5191G
Виробник: onsemi
Description: TRANS NPN 60V 4A TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
Frequency - Transition: 2MHz
на замовлення 2110 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+95.53 грн
10+57.89 грн
100+38.39 грн
500+28.17 грн
1000+25.63 грн
2000+23.50 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2N5192G 2N5191-D.PDF
2N5192G
Виробник: onsemi
Description: TRANS NPN 80V 4A TO-126
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-126
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
на замовлення 5351 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+103.29 грн
10+62.82 грн
100+41.81 грн
500+30.78 грн
1000+28.06 грн
2000+25.77 грн
5000+22.91 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2N5195G 2N5194-D.PDF
2N5195G
Виробник: onsemi
Description: TRANS PNP 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
на замовлення 1595 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+96.30 грн
10+58.86 грн
100+39.05 грн
500+28.67 грн
1000+26.10 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2N5302G 2n5302-d.pdf
2N5302G
Виробник: onsemi
Description: TRANS NPN 60V 30A TO204
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 5mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
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2N5401RLRAG 2N5401-D.PDF
2N5401RLRAG
Виробник: onsemi
Description: TRANS PNP 150V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
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2N5457G 2N5457-D.PDF
2N5457G
Виробник: onsemi
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N5458G 2N5457-D.PDF
2N5458G
Виробник: onsemi
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N5460G 2N5460-D.PDF
2N5460G
Виробник: onsemi
Description: JFET P-CH 40V TO92
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Power - Max: 350 mW
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2N5461G 2N5460-D.PDF
2N5461G
Виробник: onsemi
Description: JFET P-CH 40V TO92
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N5486G 2N5486-D.PDF
2N5486G
Виробник: onsemi
Description: RF MOSFET JFET 25V TO92
Mounting Type: Through Hole
Current Rating (Amps): 30mA
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Voltage - Rated: 25 V
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Technology: JFET
Configuration: N-Channel
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N5550G 2N5550-D.PDF
2N5550G
Виробник: onsemi
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
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2N5551RLRAG 2n5551t-d.pdf
2N5551RLRAG
Виробник: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
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2N5655G 2N5655-D.PDF
2N5655G
Виробник: onsemi
Description: TRANS NPN 250V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
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2N5657G 2n5655-d.pdf
2N5657G
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO126
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-126
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N5684G 2N5684-D.PDF
2N5684G
Виробник: onsemi
Description: TRANS PNP 80V 50A TO204
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tray
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1132.33 грн
10+772.85 грн
100+593.52 грн
В кошику  од. на суму  грн.
2N5686G 2N5684-D.PDF
2N5686G
Виробник: onsemi
Description: TRANS NPN 80V 50A TO204
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tray
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2N5883G 2n5883-d.pdf
2N5883G
Виробник: onsemi
Description: TRANS PNP 60V 25A TO204
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 25 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
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2N5884G 2n5883-d.pdf
2N5884G
Виробник: onsemi
Description: TRANS PNP 80V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 25 A
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
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2N5885G 2n5883-d.pdf
2N5885G
Виробник: onsemi
Description: TRANS NPN 60V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 25 A
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2N5886G 2N5883-D.PDF
2N5886G
Виробник: onsemi
Description: TRANS NPN 80V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Current - Collector (Ic) (Max): 25 A
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 80 V
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2N6027RLRAG 2N6027-D.PDF
2N6027RLRAG
Виробник: onsemi
Description: PROGRAMMABLE UJT 40V TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 11V
Voltage: 40V
Current - Peak: 2 µA
Voltage - Offset (Vt): 1.6 V
Current - Valley (Iv): 50 µA
Part Status: Obsolete
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028RLRAG
2N6028RLRAG
Виробник: onsemi
Description: PROGRAMMABLE UJT 40V TO92
Power Dissipation (Max): 300 mW
Current - Gate to Anode Leakage (Igao): 10 nA
Part Status: Obsolete
Current - Valley (Iv): 25 µA
Voltage - Offset (Vt): 600 mV
Current - Peak: 150 nA
Voltage: 40V
Voltage - Output: 11V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
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2N6034G 2n6035-d.pdf
2N6034G
Виробник: onsemi
Description: TRANS PNP DARL 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N6036G 2N6035-D.PDF
2N6036G
Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO-126
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N6038G description 2N6035-D.PDF
2N6038G
Виробник: onsemi
Description: TRANS NPN DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N6039G 2n6035-d.pdf
2N6039G
Виробник: onsemi
Description: TRANS NPN DARL 80V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N6040G 2n6040-d.pdf
2N6040G
Виробник: onsemi
Description: TRANS PNP DARL 60V 8A TO220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
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2N6042G 2n6040-d.pdf
2N6042G
Виробник: onsemi
Description: TRANS PNP DARL 100V 8A TO220
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
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2N6043G 2n6040-d.pdf
2N6043G
Виробник: onsemi
Description: TRANS NPN DARL 60V 8A TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
на замовлення 1133 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+105.62 грн
50+48.04 грн
100+42.83 грн
500+31.60 грн
1000+28.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2N6045G 2n6040-d.pdf
2N6045G
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A TO-220
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+105.62 грн
50+48.09 грн
100+42.86 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2N6052G 2n6052-d.pdf
2N6052G
Виробник: onsemi
Description: TRANS PNP DARL 100V 12A TO204
Packaging: Tray
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 12 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
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2N6107G 2n6107-d.pdf
2N6107G
Виробник: onsemi
Description: TRANS PNP 70V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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2N6109G 2n6107-d.pdf
2N6109G
Виробник: onsemi
Description: TRANS PNP 50V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
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2N6111G 2n6107-d.pdf
2N6111G
Виробник: onsemi
Description: TRANS PNP 30V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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2N6284G 2N6284-D.PDF
2N6284G
Виробник: onsemi
Description: TRANS NPN DARL 100V 20A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
на замовлення 2112 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+494.72 грн
10+322.56 грн
100+235.27 грн
500+186.00 грн
В кошику  од. на суму  грн.
2N6292G description 2n6107-d.pdf
2N6292G
Виробник: onsemi
Description: TRANS NPN 70V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1281 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+107.18 грн
50+49.03 грн
100+43.71 грн
500+32.26 грн
1000+29.44 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2N6388G 2n6387-d.pdf
2N6388G
Виробник: onsemi
Description: TRANS NPN DARL 80V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+102.52 грн
50+46.70 грн
100+41.60 грн
500+30.65 грн
1000+27.95 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
2N6426G 2n6426-d.pdf
2N6426G
Виробник: onsemi
Description: TRANS NPN DARL 40V 0.5A TO92
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
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2N6427G 2n6426-d.pdf
2N6427G
Виробник: onsemi
Description: TRANS NPN DARL 40V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2N6488G 2N6487-D.PDF
2N6488G
Виробник: onsemi
Description: TRANS NPN 80V 15A TO-220
Power - Max: 1.8 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+150.67 грн
50+70.14 грн
100+62.89 грн
500+47.08 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
2N6491G description 2N6487-D.PDF
2N6491G
Виробник: onsemi
Description: TRANS PNP 80V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.8 W
на замовлення 585 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+164.65 грн
50+77.39 грн
100+69.51 грн
500+52.25 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
2N6497G 2n6497-d.pdf
2N6497G
Виробник: onsemi
Description: TRANS NPN 250V 5A TO-220
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 10V
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 80 W
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2N6517G 2N6515-D.PDF
2N6517G
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2N6520RLRAG description 2N6515-D.PDF
2N6520RLRAG
Виробник: onsemi
Description: TRANS PNP 350V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товару немає в наявності
В кошику  од. на суму  грн.
2N6667G 2n6667-d.pdf
2N6667G
Виробник: onsemi
Description: TRANS PNP DARL 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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2N7000RLRAG NDS7002A-D.PDF
2N7000RLRAG
Виробник: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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2N7002LT1G 2N7002L-D.PDF
2N7002LT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAL99LT1G bal99lt1-d.pdf
BAL99LT1G
Виробник: onsemi
Description: DIODE STANDARD 70V 100MA SOT233
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.79 грн
6000+1.64 грн
9000+1.63 грн
15000+1.52 грн
21000+1.42 грн
30000+1.30 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS116LT1G BAS116LT1-D.PDF
BAS116LT1G
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.92 грн
6000+1.65 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS16DXV6T1G BAS16DXV6-D.PDF
BAS16DXV6T1G
Виробник: onsemi
Description: DIODE ARRAY GP 75V 200MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+4.50 грн
8000+3.92 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
BAS16HT1G BAS16HT1-D.PDF
BAS16HT1G
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS16LT1G BAS16LT1-D.PDF
BAS16LT1G
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 160 шт
В кошику  од. на суму  грн.
BAS16WT1G BAS16WT1-D.PDF
BAS16WT1G
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.57 грн
6000+1.34 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS16XV2T1G bas16xv2t1-d.pdf
BAS16XV2T1G
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS19LT1G BAS19LT1-D.PDF
BAS19LT1G
Виробник: onsemi
Description: DIODE STANDARD 120V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 97080 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.62 грн
6000+1.38 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS20LT1G BAS19LT1-D.PDF
BAS20LT1G
Виробник: onsemi
Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS21DW5T1G BAS19LT1-D.PDF
BAS21DW5T1G
Виробник: onsemi
Description: DIODE ARRAY GP 250V 200MA SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.99 грн
6000+2.57 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS21HT1G BAS21HT1-D.PDF
BAS21HT1G
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS21LT1G BAS19LT1-D.PDF
BAS21LT1G
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+1.79 грн
6000+1.53 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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