| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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2N5883G | onsemi |
 Description: TRANS PNP 60V 25A TO204Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 25 A Part Status: Obsolete Supplier Device Package: TO-204 (TO-3) Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V Current - Collector Cutoff (Max): 2mA Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N5884G | onsemi |
Description: TRANS PNP 80V 25A TO204 Supplier Device Package: TO-204 (TO-3) Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V Current - Collector Cutoff (Max): 2mA Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 25 A Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N5885G | onsemi |
Description: TRANS NPN 60V 25A TO204 Supplier Device Package: TO-204 (TO-3) Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V Current - Collector Cutoff (Max): 2mA Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Tray Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 25 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N5886G | onsemi |
Description: TRANS NPN 80V 25A TO204 Supplier Device Package: TO-204 (TO-3) Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V Current - Collector Cutoff (Max): 2mA Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Tray Current - Collector (Ic) (Max): 25 A Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6027RLRAG | onsemi |
Description: PROGRAMMABLE UJT 40V TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 11V Voltage: 40V Current - Peak: 2 µA Voltage - Offset (Vt): 1.6 V Current - Valley (Iv): 50 µA Part Status: Obsolete Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6028RLRAG | onsemi |
Description: PROGRAMMABLE UJT 40V TO92 Power Dissipation (Max): 300 mW Current - Gate to Anode Leakage (Igao): 10 nA Part Status: Obsolete Current - Valley (Iv): 25 µA Voltage - Offset (Vt): 600 mV Current - Peak: 150 nA Voltage: 40V Voltage - Output: 11V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6034G | onsemi |
Description: TRANS PNP DARL 40V 4A TO126 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 4 A Part Status: Obsolete Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6036G | onsemi |
Description: TRANS PNP DARL 80V 4A TO-126 Part Status: Obsolete Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6038G | onsemi |
 Description: TRANS NPN DARL 60V 4A TO-126Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6039G | onsemi |
Description: TRANS NPN DARL 80V 4A TO-126 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Part Status: Obsolete Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6040G | onsemi |
Description: TRANS PNP DARL 60V 8A TO220 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: TO-220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6042G | onsemi |
Description: TRANS PNP DARL 100V 8A TO220 Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Operating Temperature: -65°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6043G | onsemi |
Description: TRANS NPN DARL 60V 8A TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-220 |
на замовлення 1133 шт: термін постачання 21-31 дні (днів) |
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2N6045G | onsemi |
Description: TRANS NPN DARL 100V 8A TO-220 Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 8 A Part Status: Active Supplier Device Package: TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 308 шт: термін постачання 21-31 дні (днів) |
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2N6052G | onsemi |
Description: TRANS PNP DARL 100V 12A TO204 Packaging: Tray Power - Max: 150 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 12 A Part Status: Obsolete Supplier Device Package: TO-204 (TO-3) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6107G | onsemi |
Description: TRANS PNP 70V 7A TO-220 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 7 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 10MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6109G | onsemi |
Description: TRANS PNP 50V 7A TO-220 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 7 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 10MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V Current - Collector Cutoff (Max): 1mA Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Operating Temperature: -65°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6111G | onsemi |
Description: TRANS PNP 30V 7A TO-220 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 7 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 10MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6284G | onsemi |
Description: TRANS NPN DARL 100V 20A TO204 Packaging: Tray Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V Supplier Device Package: TO-204 (TO-3) Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 160 W |
на замовлення 2262 шт: термін постачання 21-31 дні (днів) |
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2N6292G | onsemi |
Description: TRANS NPN 70V 7A TO-220 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 7 A Part Status: Active Supplier Device Package: TO-220 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 1281 шт: термін постачання 21-31 дні (днів) |
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2N6388G | onsemi |
Description: TRANS NPN DARL 80V 10A TO-220 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 10 A Supplier Device Package: TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 1601 шт: термін постачання 21-31 дні (днів) |
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2N6426G | onsemi |
Description: TRANS NPN DARL 40V 0.5A TO92 Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
,TO-226_straightlead.jpg "2N6427G") |
2N6427G | onsemi |
Description: TRANS NPN DARL 40V 0.5A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6488G | onsemi |
Description: TRANS NPN 80V 15A TO-220 Power - Max: 1.8 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 15 A Part Status: Active Supplier Device Package: TO-220 Frequency - Transition: 5MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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2N6491G | onsemi |
Description: TRANS PNP 80V 15A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V Frequency - Transition: 5MHz Supplier Device Package: TO-220 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.8 W |
на замовлення 1038 шт: термін постачання 21-31 дні (днів) |
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2N6497G | onsemi |
Description: TRANS NPN 250V 5A TO-220 Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 5 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 5MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 10V Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 5A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6517G | onsemi |
Description: TRANS NPN 350V 0.5A TO92 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92 (TO-226) Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6520RLRAG | onsemi |
Description: TRANS PNP 350V 0.5A TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6667G | onsemi |
Description: TRANS PNP DARL 60V 10A TO-220 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 10 A Part Status: Obsolete Supplier Device Package: TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N7000RLRAG | onsemi |
Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N7002LT1G | onsemi |
Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 534240 шт: термін постачання 21-31 дні (днів) |
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BAL99LT1G | onsemi |
Description: DIODE STANDARD 70V 100MA SOT233 Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Voltage - DC Reverse (Vr) (Max): 70 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 6 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
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BAS116LT1G | onsemi |
Description: DIODE STANDARD 75V 200MA SOT233 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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BAS16DXV6T1G | onsemi |
Description: DIODE ARRAY GP 75V 200MA SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-563 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BAS16HT1G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BAS16LT1G | onsemi |
Description: DIODE STANDARD 100V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 18160 шт: термін постачання 21-31 дні (днів) |
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BAS16WT1G | onsemi |
Description: DIODE STANDARD 100V 200MA SC703 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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BAS16XV2T1G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BAS19LT1G | onsemi |
Description: DIODE STANDARD 120V 200MA SOT233 Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 168000 шт: термін постачання 21-31 дні (днів) |
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BAS20LT1G | onsemi |
Description: DIODE STANDARD 200V 200MA SOT233 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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BAS21DW5T1G | onsemi |
Description: DIODE ARRAY GP 250V 200MA SC88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-88A (SC-70-5/SOT-353) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAS21HT1G | onsemi |
Description: DIODE STANDARD 250V 200MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BAS21LT1G | onsemi |
Description: DIODE STANDARD 250V 200MA SOT233 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 7349 шт: термін постачання 21-31 дні (днів) |
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BAS40-04LT1G | onsemi |
Description: DIODE ARR SCHOTT 40V 120MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V |
на замовлення 657000 шт: термін постачання 21-31 дні (днів) |
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BAS40-06LT1G | onsemi |
Description: DIODE ARR SCHOTT 40V 120MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BAS40LT1G | onsemi |
Description: DIODE SCHOTTKY 40V 120MA SOT233 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 5pF @ 1V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V |
на замовлення 258000 шт: термін постачання 21-31 дні (днів) |
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BAS70LT1G | onsemi |
Description: DIODE SCHOTTKY 70V 70MA SOT233 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 10 µA @ 70 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BAT54ALT1G | onsemi |
Description: DIODE ARR SCHOTT 30V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 156000 шт: термін постачання 21-31 дні (днів) |
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BAT54HT1G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
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BAT54LT1G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 421000 шт: термін постачання 21-31 дні (днів) |
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BAT54SLT1G | onsemi |
Description: DIODE ARR SCHOTT 30V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 1497849 шт: термін постачання 21-31 дні (днів) |
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BAT54T1G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BAT54WT1G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SC703 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BAT54XV2T1G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 4390 шт: термін постачання 21-31 дні (днів) |
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BAV199LT1G | onsemi |
Description: DIODE ARRAY GP 70V 215MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 70 V |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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BAV70LT1G | onsemi |
Description: DIODE ARR GP 100V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 117416 шт: термін постачання 21-31 дні (днів) |
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BAV70WT1G | onsemi |
Description: DIODE ARRAY GP 100V 200MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 1580 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1580 шт В кошику од. на суму грн. | ||||||||||||
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BAV74LT1G | onsemi |
Description: DIODE ARRAY GP 50V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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BAV99LT1G | onsemi |
Description: DIODE ARR GP 100V 215MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 309185 шт: термін постачання 21-31 дні (днів) |
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BAV99RWT1G | onsemi |
Description: DIODE ARRAY GP 100V 215MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| 2N5883G |
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Виробник: onsemi
Description: TRANS PNP 60V 25A TO204
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 25 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Description: TRANS PNP 60V 25A TO204
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 25 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| 2N5884G |
|
Виробник: onsemi
Description: TRANS PNP 80V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 25 A
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Description: TRANS PNP 80V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 25 A
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| 2N5885G |
|
Виробник: onsemi
Description: TRANS NPN 60V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 25 A
Description: TRANS NPN 60V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 25 A
товару немає в наявності
В кошику
од. на суму грн.
| 2N5886G |
|
Виробник: onsemi
Description: TRANS NPN 80V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Current - Collector (Ic) (Max): 25 A
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: TRANS NPN 80V 25A TO204
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Current - Collector (Ic) (Max): 25 A
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 80 V
товару немає в наявності
В кошику
од. на суму грн.
| 2N6027RLRAG |
|
Виробник: onsemi
Description: PROGRAMMABLE UJT 40V TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 11V
Voltage: 40V
Current - Peak: 2 µA
Voltage - Offset (Vt): 1.6 V
Current - Valley (Iv): 50 µA
Part Status: Obsolete
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
Description: PROGRAMMABLE UJT 40V TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 11V
Voltage: 40V
Current - Peak: 2 µA
Voltage - Offset (Vt): 1.6 V
Current - Valley (Iv): 50 µA
Part Status: Obsolete
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2N6028RLRAG |
Виробник: onsemi
Description: PROGRAMMABLE UJT 40V TO92
Power Dissipation (Max): 300 mW
Current - Gate to Anode Leakage (Igao): 10 nA
Part Status: Obsolete
Current - Valley (Iv): 25 µA
Voltage - Offset (Vt): 600 mV
Current - Peak: 150 nA
Voltage: 40V
Voltage - Output: 11V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: PROGRAMMABLE UJT 40V TO92
Power Dissipation (Max): 300 mW
Current - Gate to Anode Leakage (Igao): 10 nA
Part Status: Obsolete
Current - Valley (Iv): 25 µA
Voltage - Offset (Vt): 600 mV
Current - Peak: 150 nA
Voltage: 40V
Voltage - Output: 11V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| 2N6034G |
|
Виробник: onsemi
Description: TRANS PNP DARL 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS PNP DARL 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N6036G |
|
Виробник: onsemi
Description: TRANS PNP DARL 80V 4A TO-126
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS PNP DARL 80V 4A TO-126
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N6038G |
|
Виробник: onsemi
Description: TRANS NPN DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N6039G |
|
Виробник: onsemi
Description: TRANS NPN DARL 80V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN DARL 80V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2N6040G |
|
Виробник: onsemi
Description: TRANS PNP DARL 60V 8A TO220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
Description: TRANS PNP DARL 60V 8A TO220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
товару немає в наявності
В кошику
од. на суму грн.
| 2N6042G |
|
Виробник: onsemi
Description: TRANS PNP DARL 100V 8A TO220
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Description: TRANS PNP DARL 100V 8A TO220
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| 2N6043G |
|
Виробник: onsemi
Description: TRANS NPN DARL 60V 8A TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
Description: TRANS NPN DARL 60V 8A TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
на замовлення 1133 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.68 грн |
| 50+ | 47.62 грн |
| 100+ | 42.45 грн |
| 500+ | 31.32 грн |
| 1000+ | 28.57 грн |
| 2N6045G |
|
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A TO-220
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN DARL 100V 8A TO-220
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.68 грн |
| 50+ | 47.66 грн |
| 100+ | 42.48 грн |
| 2N6052G |
|
Виробник: onsemi
Description: TRANS PNP DARL 100V 12A TO204
Packaging: Tray
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 12 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Description: TRANS PNP DARL 100V 12A TO204
Packaging: Tray
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 12 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
товару немає в наявності
В кошику
од. на суму грн.
| 2N6107G |
|
Виробник: onsemi
Description: TRANS PNP 70V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS PNP 70V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| 2N6109G |
|
Виробник: onsemi
Description: TRANS PNP 50V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Description: TRANS PNP 50V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| 2N6111G |
|
Виробник: onsemi
Description: TRANS PNP 30V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS PNP 30V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| 2N6284G |
|
Виробник: onsemi
Description: TRANS NPN DARL 100V 20A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
Description: TRANS NPN DARL 100V 20A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
на замовлення 2262 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 491.86 грн |
| 10+ | 320.43 грн |
| 100+ | 233.74 грн |
| 500+ | 184.79 грн |
| 2N6292G |
|
Виробник: onsemi
Description: TRANS NPN 70V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 70V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1281 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.22 грн |
| 50+ | 48.59 грн |
| 100+ | 43.32 грн |
| 500+ | 31.97 грн |
| 1000+ | 29.18 грн |
| 2N6388G |
|
Виробник: onsemi
Description: TRANS NPN DARL 80V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN DARL 80V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.60 грн |
| 50+ | 46.28 грн |
| 100+ | 41.23 грн |
| 500+ | 30.37 грн |
| 1000+ | 27.70 грн |
| 2N6426G |
|
Виробник: onsemi
Description: TRANS NPN DARL 40V 0.5A TO92
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
Description: TRANS NPN DARL 40V 0.5A TO92
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA, 5V
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| 2N6427G |
|
Виробник: onsemi
Description: TRANS NPN DARL 40V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS NPN DARL 40V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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| 2N6488G |
|
Виробник: onsemi
Description: TRANS NPN 80V 15A TO-220
Power - Max: 1.8 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 80V 15A TO-220
Power - Max: 1.8 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.14 грн |
| 50+ | 47.04 грн |
| 100+ | 41.92 грн |
| 2N6491G |
|
Виробник: onsemi
Description: TRANS PNP 80V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.8 W
Description: TRANS PNP 80V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.8 W
на замовлення 1038 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.60 грн |
| 50+ | 46.07 грн |
| 100+ | 41.06 грн |
| 500+ | 30.26 грн |
| 1000+ | 27.60 грн |
| 2N6497G |
|
Виробник: onsemi
Description: TRANS NPN 250V 5A TO-220
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 10V
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 80 W
Description: TRANS NPN 250V 5A TO-220
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 10V
Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 80 W
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| 2N6517G |
|
Виробник: onsemi
Description: TRANS NPN 350V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS NPN 350V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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| 2N6520RLRAG |
|
Виробник: onsemi
Description: TRANS PNP 350V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS PNP 350V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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В кошику
од. на суму грн.
| 2N6667G |
|
Виробник: onsemi
Description: TRANS PNP DARL 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS PNP DARL 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| 2N7000RLRAG |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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| 2N7002LT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 534240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.12 грн |
| 6000+ | 2.69 грн |
| BAL99LT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 70V 100MA SOT233
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 70V 100MA SOT233
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.78 грн |
| 6000+ | 1.63 грн |
| 9000+ | 1.61 грн |
| 15000+ | 1.51 грн |
| 21000+ | 1.41 грн |
| 30000+ | 1.29 грн |
| BAS116LT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.91 грн |
| 6000+ | 1.63 грн |
| BAS16DXV6T1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 75V 200MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE ARRAY GP 75V 200MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 4.47 грн |
| 8000+ | 3.89 грн |
| BAS16HT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAS16LT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE STANDARD 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 18160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.31 грн |
| 6000+ | 1.11 грн |
| BAS16WT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 100V 200MA SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.56 грн |
| 6000+ | 1.33 грн |
| BAS16XV2T1G |
|
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE STANDARD 100V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAS19LT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 120V 200MA SOT233
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 120V 200MA SOT233
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 168000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 0.86 грн |
| 6000+ | 0.82 грн |
| 9000+ | 0.76 грн |
| BAS20LT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 0.92 грн |
| 6000+ | 0.88 грн |
| 9000+ | 0.82 грн |
| BAS21DW5T1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 250V 200MA SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE ARRAY GP 250V 200MA SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.96 грн |
| BAS21HT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE STANDARD 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAS21LT1G |
|
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE STANDARD 250V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 7349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.65 грн |
| 6000+ | 1.41 грн |
| BAS40-04LT1G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
на замовлення 657000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.36 грн |
| 6000+ | 2.03 грн |
| BAS40-06LT1G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAS40LT1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 120MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Description: DIODE SCHOTTKY 40V 120MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
на замовлення 258000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.09 грн |
| 6000+ | 1.79 грн |
| BAS70LT1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Description: DIODE SCHOTTKY 70V 70MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.36 грн |
| 6000+ | 2.03 грн |
| BAT54ALT1G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 156000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.87 грн |
| 6000+ | 1.60 грн |
| BAT54HT1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.79 грн |
| 6000+ | 1.53 грн |
| BAT54LT1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 421000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.63 грн |
| 6000+ | 1.39 грн |
| BAT54SLT1G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 1497849 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.87 грн |
| 6000+ | 1.60 грн |
| BAT54T1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAT54WT1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAT54XV2T1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 4390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.71 грн |
| BAV199LT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 70V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 70 V
Description: DIODE ARRAY GP 70V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 70 V
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.01 грн |
| 6000+ | 1.72 грн |
| BAV70LT1G |
|
Виробник: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 117416 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.47 грн |
| 6000+ | 1.25 грн |
| BAV70WT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 100V 200MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE ARRAY GP 100V 200MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)
| BAV74LT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARRAY GP 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 0.98 грн |
| 6000+ | 0.94 грн |
| 9000+ | 0.82 грн |
| 15000+ | 0.71 грн |
| 21000+ | 0.65 грн |
| BAV99LT1G |
|
Виробник: onsemi
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 309185 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.73 грн |
| 6000+ | 1.48 грн |
| BAV99RWT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.93 грн |
| 6000+ | 2.52 грн |