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SQJ479EP-T1_GE3 SQJ479EP-T1_GE3 Vishay Siliconix sqj479ep.pdf Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 25500 шт:
термін постачання 21-31 дні (днів)
3000+35.27 грн
6000+31.66 грн
9000+31.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ457EP-T1_GE3 SQJ457EP-T1_GE3 Vishay Siliconix sqj457ep.pdf Description: MOSFET P-CH 60V 36A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+29.32 грн
6000+26.94 грн
9000+25.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 Vishay Siliconix sqj423ep.pdf Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+32.76 грн
6000+30.04 грн
9000+28.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ403BEEP-T1_GE3 SQJ403BEEP-T1_GE3 Vishay Siliconix sqj403beep.pdf Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SQJ148EP-T1_GE3 SQJ148EP-T1_GE3 Vishay Siliconix sqj148ep.pdf Description: MOSFET N-CH 40V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+18.42 грн
6000+16.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ946EP-T1_GE3 SQJ946EP-T1_GE3 Vishay Siliconix sqj946ep.pdf Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
товару немає в наявності
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SQJB40EP-T1_GE3 SQJB40EP-T1_GE3 Vishay Siliconix sqjb40ep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+37.20 грн
6000+34.12 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ974EP-T1_GE3 SQJ974EP-T1_GE3 Vishay Siliconix sqj974ep.pdf Description: MOSFET 2N-CH 100V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+41.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ990EP-T1_GE3 SQJ990EP-T1_GE3 Vishay Siliconix sqj990ep.pdf Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+47.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQ1912EH-T1_GE3 SQ1912EH-T1_GE3 Vishay Siliconix sq1912eh.pdf Description: MOSFET 2N-CH 20V 0.8A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+10.47 грн
6000+9.20 грн
9000+8.75 грн
15000+7.73 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJQ100E-T1_GE3 SQJQ100E-T1_GE3 Vishay Siliconix sqjq100e.pdf Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11208 шт:
термін постачання 21-31 дні (днів)
2000+99.92 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJA00EP-T1_GE3 SQJA00EP-T1_GE3 Vishay Siliconix sqja00ep.pdf Description: MOSFET N-CH 60V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+30.24 грн
6000+27.05 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJA86EP-T1_GE3 SQJA86EP-T1_GE3 Vishay Siliconix sqja86ep.pdf Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товару немає в наявності
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SQJA94EP-T1_GE3 SQJA94EP-T1_GE3 Vishay Siliconix sqja94ep.pdf Description: MOSFET N-CH 80V 46A POWERPAKSO-8
товару немає в наявності
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SQJA96EP-T1_GE3 SQJA96EP-T1_GE3 Vishay Siliconix sqja96ep.pdf Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
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SQJA92EP-T1_GE3 SQJA92EP-T1_GE3 Vishay Siliconix sqja92ep.pdf Description: MOSFET N-CH 80V 57A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
товару немає в наявності
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SQJB42EP-T1_GE3 SQJB42EP-T1_GE3 Vishay Siliconix sqjb42ep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+37.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIHB24N65EF-GE3 SIHB24N65EF-GE3 Vishay Siliconix sihb24n65ef.pdf Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
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SIHG24N65EF-GE3 SIHG24N65EF-GE3 Vishay Siliconix sihg24n65ef.pdf Description: MOSFET N-CH 650V 24A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
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SiHG44N65EF-GE3 SiHG44N65EF-GE3 Vishay Siliconix sihg44n65ef.pdf Description: MOSFET N-CH 650V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5892 pF @ 100 V
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SIHG61N65EF-GE3 SIHG61N65EF-GE3 Vishay Siliconix sihg61n65ef.pdf Description: MOSFET N-CH 650V 64A TO247AC
на замовлення 426 шт:
термін постачання 21-31 дні (днів)
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SiHA14N60E-E3 SiHA14N60E-E3 Vishay Siliconix siha14n60e.pdf Description: MOSFET N-CHANNEL 600V 13A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
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SiHD14N60E-GE3 SiHD14N60E-GE3 Vishay Siliconix sihd14n60e.pdf Description: MOSFET N-CH 600V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
на замовлення 1153 шт:
термін постачання 21-31 дні (днів)
3+137.68 грн
75+81.48 грн
150+76.79 грн
525+69.03 грн
1050+65.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHG15N60E-GE3 SIHG15N60E-GE3 Vishay Siliconix sihg15n60e.pdf Description: MOSFET N-CH 600V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG40N60E-GE3 SIHG40N60E-GE3 Vishay Siliconix sihg40n60e.pdf Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
1+527.62 грн
25+337.86 грн
100+283.17 грн
В кошику  од. на суму  грн.
SIHP14N60E-GE3 SIHP14N60E-GE3 Vishay Siliconix sihp14n60e.pdf Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SiHA24N65EF-E3 SiHA24N65EF-E3 Vishay Siliconix siha24n65ef.pdf Description: MOSFET N-CHANNEL 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SiHA25N60EFL-E3 SiHA25N60EFL-E3 Vishay Siliconix siha25n60efl.pdf Description: MOSFET N-CHANNEL 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHF35N60E-GE3 SIHF35N60E-GE3 Vishay Siliconix sihf35n60e.pdf Description: MOSFET N-CHANNEL 600V 32A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG25N60EFL-GE3 SIHG25N60EFL-GE3 Vishay Siliconix sihg25n60efl.pdf Description: MOSFET N-CH 600V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG35N60E-GE3 SIHG35N60E-GE3 Vishay Siliconix sihg35n60e.pdf Description: MOSFET N-CH 600V 32A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG47N60AE-GE3 SIHG47N60AE-GE3 Vishay Siliconix sihg47n60ae.pdf Description: MOSFET N-CH 600V 43A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
1+646.99 грн
25+373.67 грн
100+314.30 грн
500+258.46 грн
В кошику  од. на суму  грн.
SIHP25N60EFL-GE3 SIHP25N60EFL-GE3 Vishay Siliconix sihp25n60efl.pdf Description: MOSFET N-CH 600V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHP35N60E-GE3 SIHP35N60E-GE3 Vishay Siliconix sihp35n60e.pdf Description: MOSFET N-CH 600V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHP38N60E-GE3 SIHP38N60E-GE3 Vishay Siliconix sihp38n60e.pdf Description: MOSFET N-CH 600V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
1+486.24 грн
50+253.40 грн
100+233.89 грн
В кошику  од. на суму  грн.
SiHA6N65E-E3 SiHA6N65E-E3 Vishay Siliconix siha6n65e.pdf Description: MOSFET N-CHANNEL 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHW61N65EF-GE3 SIHW61N65EF-GE3 Vishay Siliconix sihw61n65ef.pdf Description: MOSFET N-CH 650V 64A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG80N60E-GE3 SIHG80N60E-GE3 Vishay Siliconix sihg80n60e.pdf Description: MOSFET N-CH 600V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 443 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SQM40010EL_GE3 SQM40010EL_GE3 Vishay Siliconix sqm40010el.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17100 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SUP90142E-GE3 SUP90142E-GE3 Vishay Siliconix sup90142e.pdf Description: MOSFET N-CH 200V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V
на замовлення 479 шт:
термін постачання 21-31 дні (днів)
1+322.30 грн
50+158.55 грн
100+143.92 грн
В кошику  од. на суму  грн.
SiHA22N60AE-E3 SiHA22N60AE-E3 Vishay Siliconix siha22n60ae.pdf Description: MOSFET N-CHANNEL 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHB22N60AE-GE3 SIHB22N60AE-GE3 Vishay Siliconix sihb22n60ae.pdf Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG22N60AE-GE3 SIHG22N60AE-GE3 Vishay Siliconix sihg22n60ae.pdf Description: MOSFET N-CH 600V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SiHP22N60AE-GE3 SiHP22N60AE-GE3 Vishay Siliconix sihp22n60ae.pdf Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SQM40031EL_GE3 SQM40031EL_GE3 Vishay Siliconix sq40031el.pdf Description: MOSFET P-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+104.36 грн
1600+95.84 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
SUM90220E-GE3 SUM90220E-GE3 Vishay Siliconix sum90220e.pdf Description: MOSFET N-CH 200V 64A D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
SUP90220E-GE3 SUP90220E-GE3 Vishay Siliconix sup90220e.pdf Description: MOSFET N-CH 200V 64A TO220AB
товару немає в наявності
В кошику  од. на суму  грн.
SQJ459EP-T1_GE3 SQJ459EP-T1_GE3 Vishay Siliconix sqj459ep.pdf Description: MOSFET P-CH 60V 52A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 68970 шт:
термін постачання 21-31 дні (днів)
3+132.90 грн
10+89.81 грн
100+63.11 грн
500+47.04 грн
1000+43.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQM60030E_GE3 SQM60030E_GE3 Vishay Siliconix sqm60030e.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SUP80090E-GE3 SUP80090E-GE3 Vishay Siliconix sup80090e.pdf Description: MOSFET N-CH 150V 128A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
SUM90140E-GE3 SUM90140E-GE3 Vishay Siliconix sum90140e.pdf Description: MOSFET N-CH 200V 90A D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
SUP90140E-GE3 SUP90140E-GE3 Vishay Siliconix sup90140e.pdf Description: MOSFET N-CH 200V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4132 pF @ 100 V
на замовлення 381 шт:
термін постачання 21-31 дні (днів)
2+233.17 грн
10+188.44 грн
100+152.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG2592DN1-T1-GE4 DG2592DN1-T1-GE4 Vishay Siliconix dg2592.pdf Description: IC DETECTION SWITCH 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Function: Detection Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Applications: Consumer Audio
Supplier Device Package: 10-miniQFN (1.4x1.8)
Part Status: Active
Number of Channels: 1
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SQ2319ADS-T1_GE3 SQ2319ADS-T1_GE3 Vishay Siliconix sq2319ads.pdf Description: MOSFET P-CH 40V 4.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11540 шт:
термін постачання 21-31 дні (днів)
4+81.17 грн
10+48.74 грн
100+31.89 грн
500+23.12 грн
1000+20.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQ3426EV-T1_GE3 SQ3426EV-T1_GE3 Vishay Siliconix sq3426ev.pdf Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 41534 шт:
термін постачання 21-31 дні (днів)
6+54.91 грн
10+46.13 грн
100+31.96 грн
500+25.06 грн
1000+21.33 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SQJ479EP-T1_GE3 SQJ479EP-T1_GE3 Vishay Siliconix sqj479ep.pdf Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 26004 шт:
термін постачання 21-31 дні (днів)
3+123.35 грн
10+79.55 грн
100+53.37 грн
500+39.56 грн
1000+36.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJ457EP-T1_GE3 SQJ457EP-T1_GE3 Vishay Siliconix sqj457ep.pdf Description: MOSFET P-CH 60V 36A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22015 шт:
термін постачання 21-31 дні (днів)
4+80.38 грн
10+56.79 грн
100+44.34 грн
500+31.75 грн
1000+29.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ423EP-T1_GE3 SQJ423EP-T1_GE3 Vishay Siliconix sqj423ep.pdf Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17269 шт:
термін постачання 21-31 дні (днів)
4+79.58 грн
10+62.38 грн
100+48.52 грн
500+38.60 грн
1000+31.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SiHH20N50E-T1-GE3 SiHH20N50E-T1-GE3 Vishay Siliconix sihh20n50e.pdf Description: MOSFET N-CH 500V 22A PPAK 8 X 8
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 147mOhm @ 10A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2063 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
DG2525DN-T1-GE4 DG2525DN-T1-GE4 Vishay Siliconix dg2525.pdf Description: IC SW DPDTX2 500MOHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 310MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -19pC
Crosstalk: -61dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 7510 шт:
термін постачання 21-31 дні (днів)
4+85.95 грн
10+60.00 грн
25+54.29 грн
100+45.01 грн
250+42.19 грн
500+40.49 грн
1000+38.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ479EP-T1_GE3 sqj479ep.pdf
SQJ479EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 25500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+35.27 грн
6000+31.66 грн
9000+31.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ457EP-T1_GE3 sqj457ep.pdf
SQJ457EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 36A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+29.32 грн
6000+26.94 грн
9000+25.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ423EP-T1_GE3 sqj423ep.pdf
SQJ423EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+32.76 грн
6000+30.04 грн
9000+28.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ403BEEP-T1_GE3 sqj403beep.pdf
SQJ403BEEP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQJ148EP-T1_GE3 sqj148ep.pdf
SQJ148EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.42 грн
6000+16.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ946EP-T1_GE3 sqj946ep.pdf
SQJ946EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SQJB40EP-T1_GE3 sqjb40ep.pdf
SQJB40EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+37.20 грн
6000+34.12 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ974EP-T1_GE3 sqj974ep.pdf
SQJ974EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+41.60 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ990EP-T1_GE3 sqj990ep.pdf
SQJ990EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+47.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQ1912EH-T1_GE3 sq1912eh.pdf
SQ1912EH-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.8A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.47 грн
6000+9.20 грн
9000+8.75 грн
15000+7.73 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJQ100E-T1_GE3 sqjq100e.pdf
SQJQ100E-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11208 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+99.92 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJA00EP-T1_GE3 sqja00ep.pdf
SQJA00EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+30.24 грн
6000+27.05 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJA86EP-T1_GE3 sqja86ep.pdf
SQJA86EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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SQJA94EP-T1_GE3 sqja94ep.pdf
SQJA94EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 46A POWERPAKSO-8
товару немає в наявності
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SQJA96EP-T1_GE3 sqja96ep.pdf
SQJA96EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
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SQJA92EP-T1_GE3 sqja92ep.pdf
SQJA92EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 57A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
товару немає в наявності
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SQJB42EP-T1_GE3 sqjb42ep.pdf
SQJB42EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+37.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIHB24N65EF-GE3 sihb24n65ef.pdf
SIHB24N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
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SIHG24N65EF-GE3 sihg24n65ef.pdf
SIHG24N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
товару немає в наявності
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SiHG44N65EF-GE3 sihg44n65ef.pdf
SiHG44N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5892 pF @ 100 V
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SIHG61N65EF-GE3 sihg61n65ef.pdf
SIHG61N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 64A TO247AC
на замовлення 426 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SiHA14N60E-E3 siha14n60e.pdf
SiHA14N60E-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 13A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
товару немає в наявності
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SiHD14N60E-GE3 sihd14n60e.pdf
SiHD14N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
на замовлення 1153 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.68 грн
75+81.48 грн
150+76.79 грн
525+69.03 грн
1050+65.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHG15N60E-GE3 sihg15n60e.pdf
SIHG15N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
товару немає в наявності
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SIHG40N60E-GE3 sihg40n60e.pdf
SIHG40N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+527.62 грн
25+337.86 грн
100+283.17 грн
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SIHP14N60E-GE3 sihp14n60e.pdf
SIHP14N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 13A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
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SiHA24N65EF-E3 siha24n65ef.pdf
SiHA24N65EF-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
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SiHA25N60EFL-E3 siha25n60efl.pdf
SiHA25N60EFL-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
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SIHF35N60E-GE3 sihf35n60e.pdf
SIHF35N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 32A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
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SIHG25N60EFL-GE3 sihg25n60efl.pdf
SIHG25N60EFL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
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SIHG35N60E-GE3 sihg35n60e.pdf
SIHG35N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 32A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
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SIHG47N60AE-GE3 sihg47n60ae.pdf
SIHG47N60AE-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 43A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+646.99 грн
25+373.67 грн
100+314.30 грн
500+258.46 грн
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SIHP25N60EFL-GE3 sihp25n60efl.pdf
SIHP25N60EFL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
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SIHP35N60E-GE3 sihp35n60e.pdf
SIHP35N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
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SIHP38N60E-GE3 sihp38n60e.pdf
SIHP38N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+486.24 грн
50+253.40 грн
100+233.89 грн
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SiHA6N65E-E3 siha6n65e.pdf
SiHA6N65E-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
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SIHW61N65EF-GE3 sihw61n65ef.pdf
SIHW61N65EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 64A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V
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SIHG80N60E-GE3 sihg80n60e.pdf
SIHG80N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 443 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 100 V
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SQM40010EL_GE3 sqm40010el.pdf
SQM40010EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17100 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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SUP90142E-GE3 sup90142e.pdf
SUP90142E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V
на замовлення 479 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+322.30 грн
50+158.55 грн
100+143.92 грн
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SiHA22N60AE-E3 siha22n60ae.pdf
SiHA22N60AE-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
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SIHB22N60AE-GE3 sihb22n60ae.pdf
SIHB22N60AE-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
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SIHG22N60AE-GE3 sihg22n60ae.pdf
SIHG22N60AE-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
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SiHP22N60AE-GE3 sihp22n60ae.pdf
SiHP22N60AE-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
товару немає в наявності
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SQM40031EL_GE3 sq40031el.pdf
SQM40031EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+104.36 грн
1600+95.84 грн
Мінімальне замовлення: 800
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SUM90220E-GE3 sum90220e.pdf
SUM90220E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 64A D2PAK
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SUP90220E-GE3 sup90220e.pdf
SUP90220E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 64A TO220AB
товару немає в наявності
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SQJ459EP-T1_GE3 sqj459ep.pdf
SQJ459EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 52A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 68970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.90 грн
10+89.81 грн
100+63.11 грн
500+47.04 грн
1000+43.12 грн
Мінімальне замовлення: 3
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SQM60030E_GE3 sqm60030e.pdf
SQM60030E_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
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SUP80090E-GE3 sup80090e.pdf
SUP80090E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 128A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V
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SUM90140E-GE3 sum90140e.pdf
SUM90140E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 90A D2PAK
товару немає в наявності
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SUP90140E-GE3 sup90140e.pdf
SUP90140E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4132 pF @ 100 V
на замовлення 381 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+233.17 грн
10+188.44 грн
100+152.42 грн
Мінімальне замовлення: 2
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DG2592DN1-T1-GE4 dg2592.pdf
DG2592DN1-T1-GE4
Виробник: Vishay Siliconix
Description: IC DETECTION SWITCH 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Function: Detection Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Applications: Consumer Audio
Supplier Device Package: 10-miniQFN (1.4x1.8)
Part Status: Active
Number of Channels: 1
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
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SQ2319ADS-T1_GE3 sq2319ads.pdf
SQ2319ADS-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+81.17 грн
10+48.74 грн
100+31.89 грн
500+23.12 грн
1000+20.93 грн
Мінімальне замовлення: 4
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SQ3426EV-T1_GE3 sq3426ev.pdf
SQ3426EV-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 41534 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.91 грн
10+46.13 грн
100+31.96 грн
500+25.06 грн
1000+21.33 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SQJ479EP-T1_GE3 sqj479ep.pdf
SQJ479EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 26004 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.35 грн
10+79.55 грн
100+53.37 грн
500+39.56 грн
1000+36.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJ457EP-T1_GE3 sqj457ep.pdf
SQJ457EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 36A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22015 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+80.38 грн
10+56.79 грн
100+44.34 грн
500+31.75 грн
1000+29.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SQJ423EP-T1_GE3 sqj423ep.pdf
SQJ423EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17269 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.58 грн
10+62.38 грн
100+48.52 грн
500+38.60 грн
1000+31.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SiHH20N50E-T1-GE3 sihh20n50e.pdf
SiHH20N50E-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 22A PPAK 8 X 8
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 147mOhm @ 10A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2063 pF @ 100 V
товару немає в наявності
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DG2525DN-T1-GE4 dg2525.pdf
DG2525DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SW DPDTX2 500MOHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 310MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -19pC
Crosstalk: -61dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 7510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.95 грн
10+60.00 грн
25+54.29 грн
100+45.01 грн
250+42.19 грн
500+40.49 грн
1000+38.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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