Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (10949) > Сторінка 26 з 183
Фото | Назва | Виробник | Інформація |
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SI7904BDN-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 6A 1212-8 |
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SI7911DN-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 4.2A 1212-8 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SI7913DN-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 5A 1212-8 |
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SI7922DN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A 1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
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SI7923DN-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 4.3A 1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
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SI7942DP-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 49mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
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SI7945DP-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 7A PPAK SO-8 |
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SI7946DP-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8 |
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SI7949DP-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 60V 3.2A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SI7956DP-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
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Si7958DP-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8 |
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SI7960DP-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
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SI7962DP-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 40V 7.1A PPAK SO-8 |
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SI7964DP-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.1A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.1A Rds On (Max) @ Id, Vgs: 23mOhm @ 9.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
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SI7983DP-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 7.7A PPAK SO-8 |
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SI8401DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V |
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SI8404DB-T1-E1 | Vishay Siliconix | Description: MOSFET N-CH 8V 12.2A 4MICROFOOT |
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SI8405DB-T1-E1 | Vishay Siliconix | Description: MOSFET P-CH 12V 3.6A 4MICROFOOT |
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SI8407DB-T2-E1 | Vishay Siliconix | Description: MOSFET P-CH 20V 5.8A 6MICRO FOOT |
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SI8409DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SI8413DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 20V 4.8A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Power Dissipation (Max): 1.47W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V |
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SI8415DB-T1-E1 | Vishay Siliconix | Description: MOSFET P-CH 12V 5.3A 2X2 4-MFP |
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SI8424DB-T1-E1 | Vishay Siliconix |
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 4-Microfoot Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V |
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SI8429DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 8V 11.7A 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SI8435DB-T1-E1 | Vishay Siliconix | Description: MOSFET P-CH 20V 10A 2X2 4-MFP |
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SI8900EDB-T2-E1 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 5.4A 10-MFP |
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SI8901EDB-T2-E1 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 6-MICRO FOOT®CSP Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 350µA Supplier Device Package: 6-Micro Foot™ (2.36x1.56) |
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SI8902EDB-T2-E1 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 3.9A 6-MFP |
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SI8904EDB-T2-E1 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 3.8A 6-MFP |
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SI9424BDY-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 5.6A 8-SOIC |
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Si9433BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 4.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
на замовлення 9700 шт: термін постачання 21-31 дні (днів) |
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SI9434BDY-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 4.5A 8SO |
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SI9435BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 4.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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SI9926BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6.2A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.14W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC |
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SI9933BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 3.6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC |
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SI9934BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC |
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SIA411DJ-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 12A SC70-6 |
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SIA443DJ-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 9A SC70-6 |
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SIA450DJ-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 240V 1.52A SC70-6 |
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SIA810DJ-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 4.5A SC-70-6 |
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SIA811DJ-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 4.5A SC70-6 |
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SiA911DJ-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 4.5A SC70-6 |
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SIA914DJ-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 20V 4.5A SC70-6 |
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SIB411DK-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH 20V 9A SC75-6 |
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SIB412DK-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 9A SC75-6 |
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SIB911DK-T1-E3 | Vishay Siliconix | Description: MOSFET 2P-CH 20V 2.6A SC75-6 |
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SIE800DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 50A 10-POLARPAK |
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SIE802DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 60A 10-POLARPAK |
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SIE806DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 60A 10-POLARPAK |
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SIE810DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 60A 10POLARPAK |
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SIE812DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 60A 10-POLARPAK |
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SIE818DF-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 75V 60A 10POLARPAK Packaging: Tape & Reel (TR) Package / Case: 10-PolarPAK® (L) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 10-PolarPAK® (L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V |
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SIE820DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 50A 10-POLARPAK |
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SIE822DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 50A 10-POLARPAK |
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SIE830DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 50A 10-POLARPAK |
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SIE832DF-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A 10-POLARPAK |
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SIF902EDZ-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 7A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 2x5 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® (2x5) |
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SIF912EDZ-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 7.4A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 2x5 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® (2x5) |
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SUB75P03-07-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 75A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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SUM09N20-270-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 9A TO263 |
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SI7911DN-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.2A 1212-8
Description: MOSFET 2P-CH 20V 4.2A 1212-8
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)SI7922DN-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
товар відсутній
SI7923DN-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2P-CH 30V 4.3A 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
товар відсутній
SI7942DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
товар відсутній
SI7946DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
товар відсутній
SI7949DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2P-CH 60V 3.2A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 47.9 грн |
SI7956DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
товар відсутній
Si7958DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
товар відсутній
SI7960DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
товар відсутній
SI7962DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.1A PPAK SO-8
Description: MOSFET 2N-CH 40V 7.1A PPAK SO-8
товар відсутній
SI7964DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.1A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2N-CH 60V 6.1A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Rds On (Max) @ Id, Vgs: 23mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
товар відсутній
SI7983DP-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 7.7A PPAK SO-8
Description: MOSFET 2P-CH 20V 7.7A PPAK SO-8
товар відсутній
SI8401DB-T1-E1 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Description: MOSFET P-CH 20V 3.6A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
товар відсутній
SI8404DB-T1-E1 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
товар відсутній
SI8405DB-T1-E1 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 3.6A 4MICROFOOT
Description: MOSFET P-CH 12V 3.6A 4MICROFOOT
товар відсутній
SI8407DB-T2-E1 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 5.8A 6MICRO FOOT
Description: MOSFET P-CH 20V 5.8A 6MICRO FOOT
товар відсутній
SI8409DB-T1-E1 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 28.96 грн |
6000+ | 26.56 грн |
SI8413DB-T1-E1 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.8A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Description: MOSFET P-CH 20V 4.8A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
товар відсутній
SI8415DB-T1-E1 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 5.3A 2X2 4-MFP
Description: MOSFET P-CH 12V 5.3A 2X2 4-MFP
товар відсутній
SI8424DB-T1-E1 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V
товар відсутній
SI8429DB-T1-E1 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V 11.7A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
Description: MOSFET P-CH 8V 11.7A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 26.87 грн |
6000+ | 24.65 грн |
9000+ | 23.51 грн |
SI8901EDB-T2-E1 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
товар відсутній
Si9433BDY-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
на замовлення 9700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.29 грн |
5000+ | 21.36 грн |
SI9435BDY-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Description: MOSFET P-CH 30V 4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.29 грн |
5000+ | 21.36 грн |
12500+ | 20.38 грн |
SI9926BDY-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 20V 6.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
SI9933BDY-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 20V 3.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
SI9934BDY-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
SIE800DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 50A 10-POLARPAK
Description: MOSFET N-CH 30V 50A 10-POLARPAK
товар відсутній
SIE802DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A 10-POLARPAK
Description: MOSFET N-CH 30V 60A 10-POLARPAK
товар відсутній
SIE806DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A 10-POLARPAK
Description: MOSFET N-CH 30V 60A 10-POLARPAK
товар відсутній
SIE810DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK
Description: MOSFET N-CH 20V 60A 10POLARPAK
товар відсутній
SIE812DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 60A 10-POLARPAK
Description: MOSFET N-CH 40V 60A 10-POLARPAK
товар відсутній
SIE818DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 75V 60A 10POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V
Description: MOSFET N-CH 75V 60A 10POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V
товар відсутній
SIE820DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10-POLARPAK
Description: MOSFET N-CH 20V 50A 10-POLARPAK
товар відсутній
SIE822DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10-POLARPAK
Description: MOSFET N-CH 20V 50A 10-POLARPAK
товар відсутній
SIE830DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 50A 10-POLARPAK
Description: MOSFET N-CH 30V 50A 10-POLARPAK
товар відсутній
SIE832DF-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 50A 10-POLARPAK
Description: MOSFET N-CH 40V 50A 10-POLARPAK
товар відсутній
SIF902EDZ-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Description: MOSFET 2N-CH 20V 7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
товар відсутній
SIF912EDZ-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
товар відсутній
SUB75P03-07-E3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 75A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET P-CH 30V 75A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товар відсутній