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SI4835BDY-T1-E3 SI4835BDY-T1-E3 Vishay Siliconix Description: MOSFET P-CH 30V 7.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V
товару немає в наявності
В кошику  од. на суму  грн.
SI4838DY-T1-E3 SI4838DY-T1-E3 Vishay Siliconix si4838dy.pdf Description: MOSFET N-CH 12V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+105.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4840DY-T1-E3 SI4840DY-T1-E3 Vishay Siliconix 71188.pdf Description: MOSFET N-CH 40V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
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SI4845DY-T1-E3 SI4845DY-T1-E3 Vishay Siliconix si4845dy.pdf Description: MOSFET P-CH 20V 2.7A 8-SOIC
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SI4848DY-T1-E3 SI4848DY-T1-E3 Vishay Siliconix si4848dy.pdf Description: MOSFET N-CH 150V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+45.56 грн
5000+41.43 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4850EY-T1-E3 SI4850EY-T1-E3 Vishay Siliconix 71146.pdf Description: MOSFET N-CH 60V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+53.89 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
Si4874BDY-T1-E3 Si4874BDY-T1-E3 Vishay Siliconix Si4874BDY.PDF Description: MOSFET N-CH 30V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+64.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
Si4876DY-T1-E3 Si4876DY-T1-E3 Vishay Siliconix 71312.pdf Description: MOSFET N-CH 20V 14A 8-SOIC
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SI4890DY-T1-E3 SI4890DY-T1-E3 Vishay Siliconix si4890dy.pdf Description: MOSFET N-CH 30V 11A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+86.19 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4894BDY-T1-E3 SI4894BDY-T1-E3 Vishay Siliconix si4894bd.pdf Description: MOSFET N-CH 30V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+35.95 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4896DY-T1-E3 SI4896DY-T1-E3 Vishay Siliconix 71300.pdf Description: MOSFET N-CH 80V 6.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+86.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4900DY-T1-E3 SI4900DY-T1-E3 Vishay Siliconix si4900dy.pdf Description: MOSFET 2N-CH 60V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+36.31 грн
5000+32.54 грн
7500+31.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
Si4904DY-T1-E3 Si4904DY-T1-E3 Vishay Siliconix si4904dy.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+66.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
Si4906DY-T1-E3 Si4906DY-T1-E3 Vishay Siliconix si4906dy.pdf Description: MOSFET 2N-CH 40V 6.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4908DY-T1-E3 SI4908DY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 40V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.75W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4910DY-T1-E3 SI4910DY-T1-E3 Vishay Siliconix si4910dy.pdf Description: MOSFET 2N-CH 40V 7.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
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SI4913DY-T1-E3 SI4913DY-T1-E3 Vishay Siliconix 71997.pdf Description: MOSFET 2P-CH 20V 7.1A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 500µA
Supplier Device Package: 8-SOIC
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SI4914DY-T1-E3 SI4914DY-T1-E3 Vishay Siliconix si4914dy.pdf Description: MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4916DY-T1-E3 SI4916DY-T1-E3 Vishay Siliconix si4916dy.pdf Description: MOSFET 2N-CH 30V 10A/10.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W, 3.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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Si4922BDY-T1-E3 Si4922BDY-T1-E3 Vishay Siliconix si4922bd.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+48.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4925BDY-T1-E3 SI4925BDY-T1-E3 Vishay Siliconix 72001.pdf Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4931DY-T1-E3 SI4931DY-T1-E3 Vishay Siliconix si4931dy.pdf Description: MOSFET 2P-CH 12V 6.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
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SI4933DY-T1-E3 SI4933DY-T1-E3 Vishay Siliconix 71980.pdf Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 500µA
Supplier Device Package: 8-SOIC
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SI4936BDY-T1-E3 SI4936BDY-T1-E3 Vishay Siliconix Si4936BDY.PDF Description: MOSFET 2N-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4941EDY-T1-E3 SI4941EDY-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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SI4943BDY-T1-E3 SI4943BDY-T1-E3 Vishay Siliconix si4943bd.pdf Description: MOSFET 2P-CH 20V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4944DY-T1-E3 SI4944DY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 30V 9.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4946BEY-T1-E3 SI4946BEY-T1-E3 Vishay Siliconix si4946be.pdf Description: MOSFET 2N-CH 60V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4947ADY-T1-E3 SI4947ADY-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 30V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4948BEY-T1-E3 SI4948BEY-T1-E3 Vishay Siliconix si4948be.pdf Description: MOSFET 2P-CH 60V 2.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+38.03 грн
5000+34.10 грн
7500+33.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4963BDY-T1-E3 SI4963BDY-T1-E3 Vishay Siliconix si4963bd.pdf Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4972DY-T1-E3 SI4972DY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4973DY-T1-E3 SI4973DY-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4974DY-T1-E3 SI4974DY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 30V 6A/4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4992EY-T1-E3 SI4992EY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 75V 3.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI5401DC-T1-E3 SI5401DC-T1-E3 Vishay Siliconix 73225.pdf Description: MOSFET P-CH 20V 5.2A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
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SI5402BDC-T1-E3 SI5402BDC-T1-E3 Vishay Siliconix si5402bdc.pdf Description: MOSFET N-CH 30V 4.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
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SI5404BDC-T1-E3 SI5404BDC-T1-E3 Vishay Siliconix 73102.pdf Description: MOSFET N-CH 20V 5.4A 1206-8
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SI5406DC-T1-E3 SI5406DC-T1-E3 Vishay Siliconix 71657.pdf Description: MOSFET N-CH 12V 6.9A 1206-8
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SI5424DC-T1-E3 SI5424DC-T1-E3 Vishay Siliconix si5424dc.pdf Description: MOSFET N-CH 30V 6A 1206-8
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SI5433BDC-T1-E3 SI5433BDC-T1-E3 Vishay Siliconix 73208.pdf Description: MOSFET P-CH 20V 4.8A 1206-8
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SI5435BDC-T1-E3 SI5435BDC-T1-E3 Vishay Siliconix 73137.pdf Description: MOSFET P-CH 30V 4.3A 1206-8
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SI5441BDC-T1-E3 SI5441BDC-T1-E3 Vishay Siliconix 73207.pdf Description: MOSFET P-CH 20V 4.4A 1206-8
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SI5445BDC-T1-E3 SI5445BDC-T1-E3 Vishay Siliconix 73251.pdf Description: MOSFET P-CH 8V 5.2A 1206-8
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SI5447DC-T1-E3 SI5447DC-T1-E3 Vishay Siliconix 71256.pdf Description: MOSFET P-CH 20V 3.5A 1206-8
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SI5463EDC-T1-E3 SI5463EDC-T1-E3 Vishay Siliconix 71364.pdf Description: MOSFET P-CH 20V 3.8A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
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SI5473DC-T1-E3 SI5473DC-T1-E3 Vishay Siliconix si5473dc.pdf Description: MOSFET P-CH 12V 5.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
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SI5476DU-T1-E3 Vishay Siliconix 73663.pdf Description: MOSFET N-CH 60V 12A PPAK CHIPFET
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SI5480DU-T1-E3 Vishay Siliconix 73585.pdf Description: MOSFET N-CH 30V 12A PPAK CHIPFET
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SI5481DU-T1-E3 Vishay Siliconix 73777.pdf Description: MOSFET P-CH 20V 12A PPAK
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SI5482DU-T1-E3 Vishay Siliconix 73594.pdf Description: MOSFET N-CH 30V 12A PPAK CHIPFET
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SI5484DU-T1-E3 Vishay Siliconix 73589.pdf Description: MOSFET N-CH 20V 12A PPAK CHIPFET
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SI5485DU-T1-E3 Vishay Siliconix si5485du.pdf Description: MOSFET P-CH 20V 12A PPAK
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SI5486DU-T1-E3 SI5486DU-T1-E3 Vishay Siliconix si5486du.pdf Description: MOSFET N-CH 20V 12A CHIPFET
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SI5499DC-T1-E3 SI5499DC-T1-E3 Vishay Siliconix si5499dc.pdf Description: MOSFET P-CH 8V 6A 1206-8 CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 4 V
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SI5504DC-T1-E3 SI5504DC-T1-E3 Vishay Siliconix si5504dc.pdf Description: MOSFET N/P-CH 30V 2.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Part Status: Obsolete
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SI5509DC-T1-E3 SI5509DC-T1-E3 Vishay Siliconix 73629.pdf Description: MOSFET N/P-CH 20V 6.1A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5511DC-T1-E3 SI5511DC-T1-E3 Vishay Siliconix SI5511DC.pdf Description: MOSFET N/P-CH 30V 4A/3.6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5513DC-T1-E3 SI5513DC-T1-E3 Vishay Siliconix 71186.pdf Description: MOSFET N/P-CH 20V 3.1A 1206-8
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SI5515DC-T1-E3 SI5515DC-T1-E3 Vishay Siliconix 72221.pdf Description: MOSFET N/P-CH 20V 4.4A 1206-8
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SI4835BDY-T1-E3
SI4835BDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V
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SI4838DY-T1-E3 si4838dy.pdf
SI4838DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+105.97 грн
Мінімальне замовлення: 2500
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SI4840DY-T1-E3 71188.pdf
SI4840DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
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SI4845DY-T1-E3 si4845dy.pdf
SI4845DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 8-SOIC
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SI4848DY-T1-E3 si4848dy.pdf
SI4848DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+45.56 грн
5000+41.43 грн
Мінімальне замовлення: 2500
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SI4850EY-T1-E3 71146.pdf
SI4850EY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+53.89 грн
Мінімальне замовлення: 2500
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Si4874BDY-T1-E3 Si4874BDY.PDF
Si4874BDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+64.10 грн
Мінімальне замовлення: 2500
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Si4876DY-T1-E3 71312.pdf
Si4876DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
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SI4890DY-T1-E3 si4890dy.pdf
SI4890DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+86.19 грн
Мінімальне замовлення: 2500
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SI4894BDY-T1-E3 si4894bd.pdf
SI4894BDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+35.95 грн
Мінімальне замовлення: 2500
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SI4896DY-T1-E3 71300.pdf
SI4896DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+86.10 грн
Мінімальне замовлення: 2500
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SI4900DY-T1-E3 si4900dy.pdf
SI4900DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+36.31 грн
5000+32.54 грн
7500+31.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
Si4904DY-T1-E3 si4904dy.pdf
Si4904DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+66.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
Si4906DY-T1-E3 si4906dy.pdf
Si4906DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4908DY-T1-E3
SI4908DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.75W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4910DY-T1-E3 si4910dy.pdf
SI4910DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
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SI4913DY-T1-E3 71997.pdf
SI4913DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 7.1A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 500µA
Supplier Device Package: 8-SOIC
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SI4914DY-T1-E3 si4914dy.pdf
SI4914DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.5A/5.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W, 1.16W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4916DY-T1-E3 si4916dy.pdf
SI4916DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A/10.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W, 3.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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Si4922BDY-T1-E3 si4922bd.pdf
Si4922BDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+48.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SI4925BDY-T1-E3 72001.pdf
SI4925BDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4931DY-T1-E3 si4931dy.pdf
SI4931DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 12V 6.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC
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SI4933DY-T1-E3 71980.pdf
SI4933DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 12V 7.4A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 500µA
Supplier Device Package: 8-SOIC
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SI4936BDY-T1-E3 Si4936BDY.PDF
SI4936BDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4941EDY-T1-E3
SI4941EDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
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SI4943BDY-T1-E3 si4943bd.pdf
SI4943BDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4944DY-T1-E3
SI4944DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 9.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4946BEY-T1-E3 si4946be.pdf
SI4946BEY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4947ADY-T1-E3
SI4947ADY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SI4948BEY-T1-E3 si4948be.pdf
SI4948BEY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 60V 2.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+38.03 грн
5000+34.10 грн
7500+33.87 грн
Мінімальне замовлення: 2500
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SI4963BDY-T1-E3 si4963bd.pdf
SI4963BDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SI4972DY-T1-E3
SI4972DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4973DY-T1-E3
SI4973DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4974DY-T1-E3
SI4974DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A/4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4992EY-T1-E3
SI4992EY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 75V 3.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI5401DC-T1-E3 73225.pdf
SI5401DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 5.2A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
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SI5402BDC-T1-E3 si5402bdc.pdf
SI5402BDC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
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SI5404BDC-T1-E3 73102.pdf
SI5404BDC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 5.4A 1206-8
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SI5406DC-T1-E3 71657.pdf
SI5406DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 6.9A 1206-8
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SI5424DC-T1-E3 si5424dc.pdf
SI5424DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
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SI5433BDC-T1-E3 73208.pdf
SI5433BDC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.8A 1206-8
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SI5435BDC-T1-E3 73137.pdf
SI5435BDC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 4.3A 1206-8
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SI5441BDC-T1-E3 73207.pdf
SI5441BDC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A 1206-8
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SI5445BDC-T1-E3 73251.pdf
SI5445BDC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V 5.2A 1206-8
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SI5447DC-T1-E3 71256.pdf
SI5447DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.5A 1206-8
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SI5463EDC-T1-E3 71364.pdf
SI5463EDC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
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SI5473DC-T1-E3 si5473dc.pdf
SI5473DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.9A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
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SI5476DU-T1-E3 73663.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 12A PPAK CHIPFET
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SI5480DU-T1-E3 73585.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
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SI5481DU-T1-E3 73777.pdf
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK
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SI5482DU-T1-E3 73594.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK CHIPFET
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SI5484DU-T1-E3 73589.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 12A PPAK CHIPFET
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SI5485DU-T1-E3 si5485du.pdf
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK
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SI5486DU-T1-E3 si5486du.pdf
SI5486DU-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 12A CHIPFET
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SI5499DC-T1-E3 si5499dc.pdf
SI5499DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V 6A 1206-8 CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 6.2W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 4 V
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SI5504DC-T1-E3 si5504dc.pdf
SI5504DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.9A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 1206-8 ChipFET™
Part Status: Obsolete
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SI5509DC-T1-E3 73629.pdf
SI5509DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.1A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5511DC-T1-E3 SI5511DC.pdf
SI5511DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5513DC-T1-E3 71186.pdf
SI5513DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.1A 1206-8
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SI5515DC-T1-E3 72221.pdf
SI5515DC-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.4A 1206-8
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