Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149641) > Сторінка 1277 з 2495
| Фото | Назва | Виробник | Інформація |
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IRLZ34NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 56W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 35mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: logic level Gate charge: 16.7nC кількість в упаковці: 1 шт |
товару немає в наявності |
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IRLZ44NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 41A Power dissipation: 83W Case: TO220AB Mounting: THT Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: tube Gate-source voltage: ±16V Gate charge: 32nC On-state resistance: 22mΩ кількість в упаковці: 1 шт |
на замовлення 1692 шт: термін постачання 14-21 дні (днів) |
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IRS20752LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; SOT23-6 Case: SOT23-6 Turn-on time: 225ns Turn-off time: 255ns Number of channels: 1 Supply voltage: 10...18V DC Voltage class: 200V Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Kind of package: reel; tape Topology: single transistor Mounting: SMD Operating temperature: -40...125°C Output current: -240...160mA кількість в упаковці: 1 шт |
на замовлення 2610 шт: термін постачання 14-21 дні (днів) |
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IRS2092STRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16 Type of integrated circuit: audio amplifier Frequency: 800kHz Mounting: SMD Supply voltage: 10...18V DC Number of channels: 1 Amplifier class: D Case: SO16 Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1149 шт: термін постачання 14-21 дні (днів) |
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IRS20957STRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 1 Amplifier class: D Case: SO16 Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1054 шт: термін постачання 14-21 дні (днів) |
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IRS2101SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 185ns Turn-on time: 230ns Power: 625mW Part status: Not recommended for new designs кількість в упаковці: 1 шт |
на замовлення 121 шт: термін постачання 14-21 дні (днів) |
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IRS2104SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 185ns Turn-on time: 750ns Power: 625mW кількість в упаковці: 1 шт |
на замовлення 116 шт: термін постачання 14-21 дні (днів) |
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IRS21064PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 235ns Turn-on time: 320ns Power: 1.6W кількість в упаковці: 1 шт |
на замовлення 51 шт: термін постачання 14-21 дні (днів) |
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IRS2108SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 235ns Turn-on time: 320ns Power: 625mW кількість в упаковці: 1 шт |
на замовлення 49 шт: термін постачання 14-21 дні (днів) |
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IRS21094PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 235ns Turn-on time: 850ns Power: 1.6W кількість в упаковці: 1 шт |
на замовлення 96 шт: термін постачання 14-21 дні (днів) |
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IRS2110SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Case: SO16 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Mounting: SMD Operating temperature: -40...125°C Output current: -2...2A Turn-off time: 137ns Turn-on time: 155ns Number of channels: 2 Power: 1.25W Supply voltage: 10...20V DC Voltage class: 500V Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 42 шт: термін постачання 14-21 дні (днів) |
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IRS21531DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -260...180mA Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns кількість в упаковці: 1 шт |
на замовлення 1716 шт: термін постачання 14-21 дні (днів) |
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IRS2153DPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Mounting: THT Power: 1W Operating temperature: -40...125°C Voltage class: 600V Output current: -260...180mA Case: DIP8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Kind of package: tube Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Turn-off time: 50ns Turn-on time: 0.12µs Number of channels: 2 Supply voltage: 10.1...16.8V DC кількість в упаковці: 1 шт |
на замовлення 85 шт: термін постачання 14-21 дні (днів) |
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IRS2153DSPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -260...180mA Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns кількість в упаковці: 1 шт |
на замовлення 126 шт: термін постачання 14-21 дні (днів) |
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IRS21844STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Operating temperature: -40...125°C Case: SO14 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Mounting: SMD Output current: -2.3...1.9A Turn-off time: 290ns Turn-on time: 720ns Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Voltage class: 600V Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2417 шт: термін постачання 14-21 дні (днів) |
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IRS2184STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Operating temperature: -40...125°C Case: SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Mounting: SMD Output current: -2.3...1.9A Turn-off time: 290ns Turn-on time: 720ns Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Voltage class: 600V Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2442 шт: термін постачання 14-21 дні (днів) |
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IRS21867STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 188ns Turn-on time: 192ns Power: 625mW кількість в упаковці: 1 шт |
на замовлення 1618 шт: термін постачання 14-21 дні (днів) |
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IRS2186STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 188ns Turn-on time: 192ns Power: 625mW кількість в упаковці: 1 шт |
на замовлення 1363 шт: термін постачання 14-21 дні (днів) |
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IRS2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-off time: 185ns Turn-on time: 220ns Power: 625mW кількість в упаковці: 1 шт |
на замовлення 88 шт: термін постачання 14-21 дні (днів) |
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IRS2453DSTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: ballast controller; gate driver; high-/low-side Case: SO14 Output current: -260...180mA Power: 1W Number of channels: 4 Supply voltage: 10...16.6V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns кількість в упаковці: 1 шт |
на замовлення 2454 шт: термін постачання 14-21 дні (днів) |
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IRS25401PBF | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W Type of integrated circuit: driver Topology: buck Kind of integrated circuit: high-/low-side; LED driver Case: DIP8 Output current: -700...500mA Number of channels: 2 Mounting: THT Operating temperature: -25...125°C Kind of package: tube Supply voltage: 8...16.6V DC Voltage class: 200V Turn-off time: 180ns Turn-on time: 320ns Power: 1W кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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IRS44273LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; low-side,gate driver; SOT23-5 Type of integrated circuit: driver Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: gate driver; low-side Output current: -1.5...1.5A Turn-on time: 50ns Turn-off time: 50ns Power: 0.25W Number of channels: 1 Supply voltage: 9.2...20V DC Topology: single transistor кількість в упаковці: 1 шт |
на замовлення 1433 шт: термін постачання 14-21 дні (днів) |
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ISP452 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 1 Case: SOT223-3 Supply voltage: 5...34V DC On-state resistance: 0.16Ω Technology: Industrial PROFET Kind of output: N-Channel кількість в упаковці: 1 шт |
на замовлення 207 шт: термін постачання 14-21 дні (днів) |
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ISP742RI | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Mounting: SMD Case: SO8 Technology: Industrial PROFET Supply voltage: 5...34V DC Kind of output: N-Channel кількість в упаковці: 1 шт |
на замовлення 1394 шт: термін постачання 14-21 дні (днів) |
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| ISP752R | INFINEON TECHNOLOGIES | ISP752R Power switches - integrated circuits |
на замовлення 2676 шт: термін постачання 14-21 дні (днів) |
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| ISP752T | INFINEON TECHNOLOGIES | ISP752T Power switches - integrated circuits |
на замовлення 1662 шт: термін постачання 14-21 дні (днів) |
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| ISP772T | INFINEON TECHNOLOGIES |
ISP772T Power switches - integrated circuits |
на замовлення 1240 шт: термін постачання 14-21 дні (днів) |
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ITS4140N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Mounting: SMD Number of channels: 1 Case: SOT223-4 Supply voltage: 4.9...60V DC Technology: Industrial PROFET Kind of output: N-Channel кількість в упаковці: 1 шт |
на замовлення 3357 шт: термін постачання 14-21 дні (днів) |
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ITS4141NHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 1 Operating temperature: -30...85°C Case: SOT223 Supply voltage: 12...45V DC Kind of package: reel; tape On-state resistance: 0.2Ω Technology: Industrial PROFET Kind of output: N-Channel Turn-off time: 0.1ms Turn-on time: 150µs Power dissipation: 1.4W кількість в упаковці: 1 шт |
на замовлення 900 шт: термін постачання 14-21 дні (днів) |
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| ITS4142N | INFINEON TECHNOLOGIES | ITS4142N Power switches - integrated circuits |
на замовлення 3236 шт: термін постачання 14-21 дні (днів) |
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ITS428L2ATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 50mΩ Supply voltage: 4.75...43V DC Technology: Industrial PROFET кількість в упаковці: 1 шт |
на замовлення 2343 шт: термін постачання 14-21 дні (днів) |
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ITS5215L | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3.7A Mounting: SMD Number of channels: 2 Case: BSOP12 Supply voltage: 5.5...40V DC On-state resistance: 70mΩ Technology: Industrial PROFET Kind of output: N-Channel кількість в упаковці: 1 шт |
на замовлення 1090 шт: термін постачання 14-21 дні (днів) |
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ITS711L1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.7A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: DSO20 Supply voltage: 5...34V DC Output voltage: 2...4V Technology: Industrial PROFET кількість в упаковці: 1 шт |
на замовлення 289 шт: термін постачання 14-21 дні (днів) |
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| ITS716G | INFINEON TECHNOLOGIES | ITS716G Power switches - integrated circuits |
на замовлення 963 шт: термін постачання 14-21 дні (днів) |
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KP236-PS2GO-KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC1100; prototype board Family: XMC1100 Kind of connector: pin strips; USB micro Application: for pressure sensors Kit contents: prototype board Components: XMC1100; XMC4200 Number of add-on connectors: 1 Type of development kit: ARM Infineon Kind of architecture: Cortex M0 кількість в упаковці: 1 шт |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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PVDZ172NPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A Case: DIP8 On-state resistance: 0.25Ω Release time: 0.5ms Operate time: 2ms Control current: 5...25mA Max. operating current: 1.5A Control voltage: 1.2V DC Relay variant: MOSFET Manufacturer series: PVDZ172NPbF Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Switched voltage: 0...60V DC кількість в упаковці: 1 шт |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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PVG612 | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612 Type of relay: solid state Relay variant: MOSFET Manufacturer series: PVG612 Mounting: THT Contacts configuration: SPST-NO Switched voltage: -60...60V DC; 0...60V AC Operating temperature: -40...85°C Release time: 0.5ms Operate time: 2ms Control current: 5...25mA On-state resistance: 0.15Ω Max. operating current: 2.4A Case: DIP6 кількість в упаковці: 1 шт |
товару немає в наявності |
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PVG612ASPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A Type of relay: solid state Relay variant: MOSFET Manufacturer series: PVG612 Mounting: SMT Contacts configuration: SPST-NO Switched voltage: -60...60V DC; 0...60V AC Operating temperature: -40...85°C Release time: 0.5ms Operate time: 3.5ms Control current: 5...25mA On-state resistance: 0.1Ω Control voltage: 1.2V DC Max. operating current: 4A Case: DIP6 кількість в упаковці: 1 шт |
на замовлення 183 шт: термін постачання 14-21 дні (днів) |
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PVG612S | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612 Type of relay: solid state Relay variant: MOSFET Manufacturer series: PVG612 Mounting: SMT Contacts configuration: SPST-NO Switched voltage: -60...60V DC; 0...60V AC Operating temperature: -40...85°C Release time: 0.5ms Operate time: 2ms Control current: 5...25mA On-state resistance: 0.15Ω Max. operating current: 2.4A Case: DIP6 кількість в упаковці: 1 шт |
на замовлення 436 шт: термін постачання 14-21 дні (днів) |
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PVI5013RSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Mounting: SMD Case: Gull wing 8 Type of optocoupler: optocoupler Kind of output: photodiode Manufacturer series: PVI5013RPbF Turn-off time: 25µs Turn-on time: 5ms Number of channels: 2 Insulation voltage: 3.75kV кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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PVT412LSPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω Type of relay: solid state Contacts configuration: SPST-NO Control current: 3...25mA Max. operating current: 200mA Switched voltage: 0...400V AC; 0...400V DC Manufacturer series: PVT412PbF Relay variant: MOSFET On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operate time: 2ms Release time: 0.5ms Operating temperature: -40...85°C кількість в упаковці: 1 шт |
на замовлення 243 шт: термін постачання 14-21 дні (днів) |
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PVT422SPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA Type of relay: solid state Contacts configuration: DPST-NO Control voltage: 1.2V DC Control current: 2...25mA Max. operating current: 350mA Switched voltage: 0...400V AC; 0...400V DC Manufacturer series: PVT422PbF Relay variant: MOSFET On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operate time: 2ms Release time: 0.5ms Operating temperature: -40...85°C кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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S25FL128SAGNFV001 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 133MHz Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 81 шт: термін постачання 14-21 дні (днів) |
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SI4435DYTRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.4A Pulsed drain current: -50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2438 шт: термін постачання 14-21 дні (днів) |
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| SMBD914E6327HTSA1 | INFINEON TECHNOLOGIES |
SMBD914E6327HTSA1 SMD universal diodes |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
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SMBT3904SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 300MHz кількість в упаковці: 1 шт |
на замовлення 88 шт: термін постачання 14-21 дні (днів) |
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SMBT3906E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23 Case: SOT23 Type of transistor: PNP Mounting: SMD Collector current: 0.2A Power dissipation: 0.33W Collector-emitter voltage: 40V Frequency: 250MHz Polarisation: bipolar кількість в упаковці: 1 шт |
на замовлення 1770 шт: термін постачання 14-21 дні (днів) |
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| SMBTA06UPNE6327HTSA1 | INFINEON TECHNOLOGIES |
SMBTA06UPNE6327 Complementary transistors |
на замовлення 692 шт: термін постачання 14-21 дні (днів) |
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SMBTA42E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 70MHz кількість в упаковці: 1 шт |
на замовлення 3078 шт: термін постачання 14-21 дні (днів) |
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SMBTA92E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 50MHz кількість в упаковці: 1 шт |
на замовлення 1300 шт: термін постачання 14-21 дні (днів) |
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SN7002NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ кількість в упаковці: 1 шт |
на замовлення 9000 шт: термін постачання 14-21 дні (днів) |
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SN7002NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SIPMOS™ Case: SOT23 Drain current: 0.16A Power dissipation: 0.36W On-state resistance: 5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 4937 шт: термін постачання 14-21 дні (днів) |
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SN7002WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2027 шт: термін постачання 14-21 дні (днів) |
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| SPA06N80C3 | INFINEON TECHNOLOGIES | SPA06N80C3 THT N channel transistors |
на замовлення 16 шт: термін постачання 14-21 дні (днів) |
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SPA07N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 32W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ кількість в упаковці: 1 шт |
на замовлення 81 шт: термін постачання 14-21 дні (днів) |
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SPA08N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 40W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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SPA11N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 34W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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SPA17N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 42W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 33 шт: термін постачання 14-21 дні (днів) |
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SPA20N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 34.5W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 32 шт: термін постачання 14-21 дні (днів) |
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| IRLZ34NPBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ44NPBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Gate-source voltage: ±16V
Gate charge: 32nC
On-state resistance: 22mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: tube
Gate-source voltage: ±16V
Gate charge: 32nC
On-state resistance: 22mΩ
кількість в упаковці: 1 шт
на замовлення 1692 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.24 грн |
| 10+ | 49.58 грн |
| 25+ | 45.51 грн |
| 50+ | 43.96 грн |
| 100+ | 42.41 грн |
| 500+ | 38.82 грн |
| 1000+ | 37.26 грн |
| IRS20752LTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
Number of channels: 1
Supply voltage: 10...18V DC
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Operating temperature: -40...125°C
Output current: -240...160mA
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Case: SOT23-6
Turn-on time: 225ns
Turn-off time: 255ns
Number of channels: 1
Supply voltage: 10...18V DC
Voltage class: 200V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Operating temperature: -40...125°C
Output current: -240...160mA
кількість в упаковці: 1 шт
на замовлення 2610 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 62.70 грн |
| 10+ | 54.42 грн |
| 25+ | 48.91 грн |
| 100+ | 46.29 грн |
| 250+ | 41.92 грн |
| 500+ | 39.30 грн |
| 1000+ | 38.82 грн |
| IRS2092STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1149 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.54 грн |
| 10+ | 177.36 грн |
| 25+ | 159.15 грн |
| IRS20957STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1054 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.63 грн |
| 10+ | 185.42 грн |
| 25+ | 170.79 грн |
| IRS2101SPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 230ns
Power: 625mW
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 230ns
Power: 625mW
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
на замовлення 121 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.60 грн |
| 5+ | 71.55 грн |
| 10+ | 55.31 грн |
| 95+ | 51.43 грн |
| IRS2104SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 750ns
Power: 625mW
кількість в упаковці: 1 шт
на замовлення 116 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.45 грн |
| 5+ | 114.88 грн |
| 25+ | 97.04 грн |
| 95+ | 88.31 грн |
| IRS21064PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 1.6W
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 1.6W
кількість в упаковці: 1 шт
на замовлення 51 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 311.43 грн |
| 3+ | 265.03 грн |
| 10+ | 245.51 грн |
| IRS2108SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 163.03 грн |
| IRS21094PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 850ns
Power: 1.6W
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 235ns
Turn-on time: 850ns
Power: 1.6W
кількість в упаковці: 1 шт
на замовлення 96 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 106.82 грн |
| IRS2110SPBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Case: SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Turn-off time: 137ns
Turn-on time: 155ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 500V
Kind of package: tube
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Case: SO16
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Turn-off time: 137ns
Turn-on time: 155ns
Number of channels: 2
Power: 1.25W
Supply voltage: 10...20V DC
Voltage class: 500V
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 42 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 318.74 грн |
| 10+ | 262.01 грн |
| 45+ | 218.34 грн |
| 225+ | 217.37 грн |
| IRS21531DSTRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
на замовлення 1716 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.10 грн |
| 10+ | 66.51 грн |
| 25+ | 59.20 грн |
| IRS2153DPBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Power: 1W
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Power: 1W
Operating temperature: -40...125°C
Voltage class: 600V
Output current: -260...180mA
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Turn-off time: 50ns
Turn-on time: 0.12µs
Number of channels: 2
Supply voltage: 10.1...16.8V DC
кількість в упаковці: 1 шт
на замовлення 85 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 242.45 грн |
| 10+ | 190.46 грн |
| IRS2153DSPBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
на замовлення 126 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 189.16 грн |
| 5+ | 141.08 грн |
| 10+ | 133.92 грн |
| IRS21844STRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Operating temperature: -40...125°C
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Operating temperature: -40...125°C
Case: SO14
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2417 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.08 грн |
| 10+ | 122.94 грн |
| 25+ | 114.51 грн |
| 100+ | 109.66 грн |
| IRS2184STRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Turn-off time: 290ns
Turn-on time: 720ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2442 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.86 грн |
| 10+ | 95.73 грн |
| 25+ | 87.34 грн |
| IRS21867STRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
кількість в упаковці: 1 шт
на замовлення 1618 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.53 грн |
| IRS2186STRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
кількість в упаковці: 1 шт
на замовлення 1363 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 161.98 грн |
| 10+ | 127.98 грн |
| 50+ | 108.69 грн |
| 100+ | 103.83 грн |
| 250+ | 98.01 грн |
| 1000+ | 97.04 грн |
| IRS2304SPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 185ns
Turn-on time: 220ns
Power: 625mW
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 198.56 грн |
| 5+ | 140.08 грн |
| 10+ | 103.83 грн |
| 95+ | 101.89 грн |
| IRS2453DSTRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
кількість в упаковці: 1 шт
на замовлення 2454 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.59 грн |
| 10+ | 91.70 грн |
| 25+ | 86.37 грн |
| IRS25401PBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Supply voltage: 8...16.6V DC
Voltage class: 200V
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Supply voltage: 8...16.6V DC
Voltage class: 200V
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.74 грн |
| IRS44273LTRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Topology: single transistor
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Number of channels: 1
Supply voltage: 9.2...20V DC
Topology: single transistor
кількість в упаковці: 1 шт
на замовлення 1433 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.61 грн |
| 7+ | 48.37 грн |
| 10+ | 42.50 грн |
| ISP452 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Technology: Industrial PROFET
Kind of output: N-Channel
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Technology: Industrial PROFET
Kind of output: N-Channel
кількість в упаковці: 1 шт
на замовлення 207 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 156.76 грн |
| ISP742RI |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Mounting: SMD
Case: SO8
Technology: Industrial PROFET
Supply voltage: 5...34V DC
Kind of output: N-Channel
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Mounting: SMD
Case: SO8
Technology: Industrial PROFET
Supply voltage: 5...34V DC
Kind of output: N-Channel
кількість в упаковці: 1 шт
на замовлення 1394 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.75 грн |
| 10+ | 110.85 грн |
| 25+ | 94.13 грн |
| 100+ | 89.28 грн |
| ISP752R |
Виробник: INFINEON TECHNOLOGIES
ISP752R Power switches - integrated circuits
ISP752R Power switches - integrated circuits
на замовлення 2676 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.21 грн |
| 10+ | 126.15 грн |
| 26+ | 118.39 грн |
| ISP752T |
Виробник: INFINEON TECHNOLOGIES
ISP752T Power switches - integrated circuits
ISP752T Power switches - integrated circuits
на замовлення 1662 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 232.00 грн |
| 10+ | 114.51 грн |
| 28+ | 108.69 грн |
| ISP772T |
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Виробник: INFINEON TECHNOLOGIES
ISP772T Power switches - integrated circuits
ISP772T Power switches - integrated circuits
на замовлення 1240 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 161.98 грн |
| 12+ | 98.98 грн |
| 32+ | 93.16 грн |
| ITS4140N |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Kind of output: N-Channel
кількість в упаковці: 1 шт
на замовлення 3357 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.23 грн |
| 10+ | 105.81 грн |
| 25+ | 89.28 грн |
| 100+ | 81.51 грн |
| 500+ | 76.66 грн |
| ITS4141NHUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -30...85°C
Case: SOT223
Supply voltage: 12...45V DC
Kind of package: reel; tape
On-state resistance: 0.2Ω
Technology: Industrial PROFET
Kind of output: N-Channel
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Operating temperature: -30...85°C
Case: SOT223
Supply voltage: 12...45V DC
Kind of package: reel; tape
On-state resistance: 0.2Ω
Technology: Industrial PROFET
Kind of output: N-Channel
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
кількість в упаковці: 1 шт
на замовлення 900 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.77 грн |
| 10+ | 94.73 грн |
| 25+ | 83.46 грн |
| 50+ | 82.48 грн |
| ITS4142N |
Виробник: INFINEON TECHNOLOGIES
ITS4142N Power switches - integrated circuits
ITS4142N Power switches - integrated circuits
на замовлення 3236 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 283.21 грн |
| 12+ | 101.89 грн |
| 32+ | 96.07 грн |
| ITS428L2ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
кількість в упаковці: 1 шт
на замовлення 2343 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.20 грн |
| 10+ | 137.05 грн |
| 25+ | 119.36 грн |
| 100+ | 111.60 грн |
| ITS5215L |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Mounting: SMD
Number of channels: 2
Case: BSOP12
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Technology: Industrial PROFET
Kind of output: N-Channel
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Mounting: SMD
Number of channels: 2
Case: BSOP12
Supply voltage: 5.5...40V DC
On-state resistance: 70mΩ
Technology: Industrial PROFET
Kind of output: N-Channel
кількість в упаковці: 1 шт
на замовлення 1090 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.97 грн |
| 3+ | 181.39 грн |
| 10+ | 147.50 грн |
| 25+ | 139.74 грн |
| ITS711L1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Technology: Industrial PROFET
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Technology: Industrial PROFET
кількість в упаковці: 1 шт
на замовлення 289 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 523.57 грн |
| 10+ | 373.87 грн |
| 50+ | 309.56 грн |
| 100+ | 289.18 грн |
| 250+ | 262.98 грн |
| 500+ | 242.60 грн |
| ITS716G |
Виробник: INFINEON TECHNOLOGIES
ITS716G Power switches - integrated circuits
ITS716G Power switches - integrated circuits
на замовлення 963 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 500.58 грн |
| 6+ | 228.05 грн |
| 14+ | 215.43 грн |
| KP236-PS2GO-KIT |
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1100; prototype board
Family: XMC1100
Kind of connector: pin strips; USB micro
Application: for pressure sensors
Kit contents: prototype board
Components: XMC1100; XMC4200
Number of add-on connectors: 1
Type of development kit: ARM Infineon
Kind of architecture: Cortex M0
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1100; prototype board
Family: XMC1100
Kind of connector: pin strips; USB micro
Application: for pressure sensors
Kit contents: prototype board
Components: XMC1100; XMC4200
Number of add-on connectors: 1
Type of development kit: ARM Infineon
Kind of architecture: Cortex M0
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2723.42 грн |
| PVDZ172NPBF | ![]() |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A
Case: DIP8
On-state resistance: 0.25Ω
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
Max. operating current: 1.5A
Control voltage: 1.2V DC
Relay variant: MOSFET
Manufacturer series: PVDZ172NPbF
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: 0...60V DC
кількість в упаковці: 1 шт
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 1.5A
Case: DIP8
On-state resistance: 0.25Ω
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
Max. operating current: 1.5A
Control voltage: 1.2V DC
Relay variant: MOSFET
Manufacturer series: PVDZ172NPbF
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: 0...60V DC
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 836.05 грн |
| 10+ | 744.72 грн |
| 25+ | 686.08 грн |
| 50+ | 660.85 грн |
| 100+ | 639.50 грн |
| 250+ | 635.62 грн |
| PVG612 | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Relay variant: MOSFET
Manufacturer series: PVG612
Mounting: THT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.15Ω
Max. operating current: 2.4A
Case: DIP6
кількість в упаковці: 1 шт
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Relay variant: MOSFET
Manufacturer series: PVG612
Mounting: THT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.15Ω
Max. operating current: 2.4A
Case: DIP6
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| PVG612ASPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Type of relay: solid state
Relay variant: MOSFET
Manufacturer series: PVG612
Mounting: SMT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 3.5ms
Control current: 5...25mA
On-state resistance: 0.1Ω
Control voltage: 1.2V DC
Max. operating current: 4A
Case: DIP6
кількість в упаковці: 1 шт
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl: 5÷25mA; 4A
Type of relay: solid state
Relay variant: MOSFET
Manufacturer series: PVG612
Mounting: SMT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 3.5ms
Control current: 5...25mA
On-state resistance: 0.1Ω
Control voltage: 1.2V DC
Max. operating current: 4A
Case: DIP6
кількість в упаковці: 1 шт
на замовлення 183 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1702.40 грн |
| 5+ | 1458.19 грн |
| 25+ | 1228.54 грн |
| 100+ | 1053.87 грн |
| PVG612S | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Relay variant: MOSFET
Manufacturer series: PVG612
Mounting: SMT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.15Ω
Max. operating current: 2.4A
Case: DIP6
кількість в упаковці: 1 шт
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Type of relay: solid state
Relay variant: MOSFET
Manufacturer series: PVG612
Mounting: SMT
Contacts configuration: SPST-NO
Switched voltage: -60...60V DC; 0...60V AC
Operating temperature: -40...85°C
Release time: 0.5ms
Operate time: 2ms
Control current: 5...25mA
On-state resistance: 0.15Ω
Max. operating current: 2.4A
Case: DIP6
кількість в упаковці: 1 шт
на замовлення 436 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 590.46 грн |
| 5+ | 526.04 грн |
| 10+ | 485.21 грн |
| PVI5013RSPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
кількість в упаковці: 1 шт
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 261.26 грн |
| 5+ | 226.74 грн |
| 25+ | 199.90 грн |
| 100+ | 175.64 грн |
| PVT412LSPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 200mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
на замовлення 243 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 473.41 грн |
| 5+ | 357.75 грн |
| 10+ | 339.64 грн |
| PVT422SPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 679.29 грн |
| 25+ | 607.66 грн |
| 50+ | 573.51 грн |
| S25FL128SAGNFV001 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: tube
кількість в упаковці: 1 шт
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 81 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.20 грн |
| 10+ | 169.30 грн |
| 82+ | 156.24 грн |
| 164+ | 139.74 грн |
| 410+ | 131.98 грн |
| SI4435DYTRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2438 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.47 грн |
| 10+ | 55.12 грн |
| 50+ | 38.53 грн |
| 100+ | 33.87 грн |
| 250+ | 29.02 грн |
| 500+ | 26.69 грн |
| SMBD914E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
SMBD914E6327HTSA1 SMD universal diodes
SMBD914E6327HTSA1 SMD universal diodes
на замовлення 2 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 156.76 грн |
| 334+ | 3.44 грн |
| 918+ | 3.24 грн |
| SMBT3904SH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 52+ | 6.10 грн |
| 100+ | 5.20 грн |
| 250+ | 4.50 грн |
| 1000+ | 4.26 грн |
| SMBT3906E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
кількість в упаковці: 1 шт
на замовлення 1770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.59 грн |
| 38+ | 8.06 грн |
| 50+ | 6.33 грн |
| 100+ | 5.74 грн |
| 250+ | 4.97 грн |
| 500+ | 4.38 грн |
| 1000+ | 3.86 грн |
| SMBTA06UPNE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
SMBTA06UPNE6327 Complementary transistors
SMBTA06UPNE6327 Complementary transistors
на замовлення 692 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.01 грн |
| 121+ | 9.51 грн |
| 332+ | 8.93 грн |
| SMBTA42E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
кількість в упаковці: 1 шт
на замовлення 3078 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.08 грн |
| 17+ | 17.94 грн |
| 50+ | 11.35 грн |
| 100+ | 9.39 грн |
| 500+ | 6.40 грн |
| 1000+ | 5.64 грн |
| 3000+ | 4.98 грн |
| SMBTA92E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
кількість в упаковці: 1 шт
на замовлення 1300 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.17 грн |
| 14+ | 22.27 грн |
| 100+ | 12.30 грн |
| 500+ | 7.82 грн |
| 1000+ | 6.55 грн |
| 3000+ | 5.23 грн |
| 6000+ | 5.19 грн |
| SN7002NH6327XTSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
кількість в упаковці: 1 шт
на замовлення 9000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.81 грн |
| 25+ | 12.50 грн |
| 50+ | 8.31 грн |
| 100+ | 7.05 грн |
| 500+ | 4.94 грн |
| 1000+ | 4.29 грн |
| 3000+ | 3.47 грн |
| SN7002NH6433XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT23
Drain current: 0.16A
Power dissipation: 0.36W
On-state resistance: 5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT23
Drain current: 0.16A
Power dissipation: 0.36W
On-state resistance: 5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 4937 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.77 грн |
| 25+ | 12.40 грн |
| 50+ | 7.05 грн |
| 100+ | 5.52 грн |
| 250+ | 4.16 грн |
| 297+ | 3.86 грн |
| 500+ | 3.52 грн |
| SN7002WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2027 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.68 грн |
| 30+ | 10.28 грн |
| 50+ | 6.91 грн |
| 100+ | 5.93 грн |
| 500+ | 4.28 грн |
| 1000+ | 4.21 грн |
| SPA06N80C3 |
Виробник: INFINEON TECHNOLOGIES
SPA06N80C3 THT N channel transistors
SPA06N80C3 THT N channel transistors
на замовлення 16 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 225.73 грн |
| 11+ | 113.54 грн |
| 28+ | 106.75 грн |
| SPA07N60C3 | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
кількість в упаковці: 1 шт
на замовлення 81 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.68 грн |
| 10+ | 99.77 грн |
| 25+ | 73.75 грн |
| 50+ | 61.14 грн |
| SPA08N80C3 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 40W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 40W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 168.29 грн |
| 10+ | 131.98 грн |
| 25+ | 118.39 грн |
| 50+ | 115.48 грн |
| SPA11N80C3 | ![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.60 грн |
| 10+ | 185.42 грн |
| 25+ | 160.12 грн |
| 50+ | 146.53 грн |
| 100+ | 133.92 грн |
| 250+ | 131.98 грн |
| SPA15N60C3XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.61 грн |
| SPA17N80C3 | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 318.74 грн |
| 10+ | 245.89 грн |
| 50+ | 206.70 грн |
| 100+ | 203.79 грн |
| SPA20N60C3 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 386.67 грн |
| 10+ | 289.22 грн |
| 25+ | 236.78 грн |

































