Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (121556) > Сторінка 2010 з 2026

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BSC014N04LSATMA1 BSC014N04LSATMA1 INFINEON TECHNOLOGIES BSC014N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC014N04LSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 3W; TDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 3W
Case: TDFN8
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 85nC
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BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 INFINEON TECHNOLOGIES BSC014NE2LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BSZ014NE2LS5IFATMA1 INFINEON TECHNOLOGIES BSZ014NE2LS5IF-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IRFR3710ZTRPBF IRFR3710ZTRPBF INFINEON TECHNOLOGIES IRFR3710ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 1316 шт:
термін постачання 14-30 дні (днів)
4+138.18 грн
5+106.68 грн
10+94.18 грн
25+78.33 грн
50+68.27 грн
100+59.96 грн
250+51.74 грн
500+47.05 грн
1000+43.44 грн
Мінімальне замовлення: 4
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BFR182WH6327XTSA1 BFR182WH6327XTSA1 INFINEON TECHNOLOGIES BFR182WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.25W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Case: SOT323
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
23+19.87 грн
31+13.67 грн
36+11.91 грн
50+10.73 грн
100+9.64 грн
250+8.64 грн
1000+7.97 грн
Мінімальне замовлення: 23
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AUIRF3710ZS AUIRF3710ZS INFINEON TECHNOLOGIES auirf3710z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 82nC
On-state resistance: 18mΩ
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IRF7855TRPBF IRF7855TRPBF INFINEON TECHNOLOGIES irf7855pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BFP196E6327HTSA1 INFINEON TECHNOLOGIES Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
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BFP196WNH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
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BB639E7904HTSA1 BB639E7904HTSA1 INFINEON TECHNOLOGIES BB639_659.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
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BFP193WH6327 BFP193WH6327 INFINEON TECHNOLOGIES BFP193WH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
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ICL8800XUMA1 INFINEON TECHNOLOGIES ICL88xx.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
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ICL8810XUMA1 INFINEON TECHNOLOGIES ICL88xx.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
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ICL8820XUMA1 INFINEON TECHNOLOGIES ICL88xx.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
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IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRL1004PBF IRL1004PBF INFINEON TECHNOLOGIES irl1004pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
3+150.83 грн
5+123.28 грн
10+115.73 грн
15+110.70 грн
25+105.67 грн
Мінімальне замовлення: 3
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IRFU024NPBF IRFU024NPBF INFINEON TECHNOLOGIES irfr024n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Technology: HEXFET®
On-state resistance: 75mΩ
Gate-source voltage: ±20V
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IKFW60N65ES5XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d97303931f06 Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Turn-on switching energy: 1.23mJ
Gate-emitter voltage: ±20V
Power dissipation: 138W
Collector current: 77A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Technology: Field Stop; Trench
Gate charge: 0.12µC
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IKW75N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
240+407.33 грн
Мінімальне замовлення: 240
В кошику  од. на суму  грн.
IKZA75N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-4
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-4
Mounting: THT
Gate charge: 168nC
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
240+445.26 грн
Мінімальне замовлення: 240
В кошику  од. на суму  грн.
CY4500 CY4500 INFINEON TECHNOLOGIES Infineon-CY4500_EZ-PD_Protocol_Analyzer_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efe85ab14e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB B micro; USB C plug; USB C socket
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CY4533 CY4533 INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board
Type of development kit: Cypress
Connection: USB C socket
Kind of module: evaluation board
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CY3280-MBR3 INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress; Arduino
Type of development kit: Cypress
Connection: USB
Application - series/manufacturer: Arduino
Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor
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CY8CPROTO-062-4343W INFINEON TECHNOLOGIES Infineon-CY8CPROTO-062-4343W_PSoC_6_Wi-Fi_BT_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0118571844&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi
Type of development kit: Cypress
Connection: microSD; USB
Kind of module: Bluetooth; prototype board; WiFi
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2EDL05N06PJXUMA1 INFINEON TECHNOLOGIES 2EDL05x06xx.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Technology: EiceDRIVER™
Supply voltage: 10...20V
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Voltage class: 600V
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IRFR5505TRPBF IRFR5505TRPBF INFINEON TECHNOLOGIES irfr5505.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1792 шт:
термін постачання 14-30 дні (днів)
5+95.74 грн
6+70.78 грн
10+60.89 грн
25+48.98 грн
50+41.68 грн
100+36.06 грн
500+27.93 грн
1000+25.75 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
 		EVAL-IMM101T-015TOBO1 (SP004177748) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Type of development kit: evaluation
Kit contents: prototype board
Components: IMM101T-015M
Interface: GPIO; I2C; PWM; UART
Connection: screw terminal x2
Kind of module: motor driver
Application: motors
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+4407.43 грн
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EVAL-IMM101T-046TOBO1 (SP004177752)
+2
 		EVAL-IMM101T-046TOBO1 (SP004177752) INFINEON TECHNOLOGIES EVALIMM101T015TOBO.PDF Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Interface: GPIO; I2C; PWM; UART
Components: IMM101T-046M
Kind of module: motor driver
Application: motors
Kit contents: prototype board
Connection: screw terminal x2
Type of development kit: evaluation
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BAT6406E6327HTSA1 BAT6406E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 6879 шт:
термін постачання 14-30 дні (днів)
42+10.84 грн
59+7.21 грн
63+6.71 грн
100+5.26 грн
300+4.59 грн
500+4.27 грн
750+4.02 грн
1000+3.84 грн
3000+3.46 грн
Мінімальне замовлення: 42
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IRF250P224 IRF250P224 INFINEON TECHNOLOGIES IRF250P224.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
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IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P04P4L-11-DataSheet-v01_01-EN.pdf?fileId=db3a304329a0f6ee0129db9d1df05c58 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -200A
Gate charge: 14nC
на замовлення 2335 шт:
термін постачання 14-30 дні (днів)
5+109.28 грн
Мінімальне замовлення: 5
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IPD50P04P413ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 58W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Power dissipation: 58W
Case: DPAK; TO252
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
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IPD50P04P413ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhancement
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IR2213SPBF IR2213SPBF INFINEON TECHNOLOGIES IR2213PBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
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XMC1403Q048X0064AAXUMA1 XMC1403Q048X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q048X0128AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q048X0200AAXUMA1 XMC1403Q048X0200AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q064X0064AAXUMA1 XMC1403Q064X0064AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q064X0128AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q064X0200AAXUMA1 XMC1403Q064X0200AAXUMA1 INFINEON TECHNOLOGIES XMC1400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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S25FS512SDSNFB010 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Application: automotive
Case: WSON8
Type of integrated circuit: FLASH memory
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S25FS512SDSNFI013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
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S25FS512SDSNFV011 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
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IRFHS8242TRPBF IRFHS8242TRPBF INFINEON TECHNOLOGIES irfhs8242pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
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IRFHS8342TRPBF IRFHS8342TRPBF INFINEON TECHNOLOGIES irfhs8342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
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AUIRGP35B60PD AUIRGP35B60PD INFINEON TECHNOLOGIES AUIRGP35B60PD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Mounting: THT
Kind of package: tube
Case: TO247AC
Type of transistor: IGBT
Technology: Trench
Turn-on time: 34ns
Turn-off time: 142ns
Gate charge: 240nC
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 120A
Power dissipation: 123W
Collector-emitter voltage: 600V
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AUIRF7316QTR AUIRF7316QTR INFINEON TECHNOLOGIES auirf7316q.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
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TD330N16KOFHPSA2 TD330N16KOFHPSA2 INFINEON TECHNOLOGIES TD330N16KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
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TT330N16KOF TT330N16KOF INFINEON TECHNOLOGIES TT330N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPP60R060P7 IPP60R060P7 INFINEON TECHNOLOGIES IPP60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R190E6XKSA1 IPA60R190E6XKSA1 INFINEON TECHNOLOGIES IPA60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 INFINEON TECHNOLOGIES IPA60R180P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
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IPA60R180P7XKSA1 IPA60R180P7XKSA1 INFINEON TECHNOLOGIES IPA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
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IPA60R280P6XKSA1 IPA60R280P6XKSA1 INFINEON TECHNOLOGIES IPA60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
3+158.96 грн
4+138.38 грн
10+105.67 грн
20+90.57 грн
50+88.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R280E6XKSA1 IPA60R280E6XKSA1 INFINEON TECHNOLOGIES IPA60R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 306 шт:
термін постачання 14-30 дні (днів)
4+121.93 грн
5+99.80 грн
10+89.74 грн
50+84.70 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA60R380P6XKSA1 IPA60R380P6XKSA1 INFINEON TECHNOLOGIES IPA60R380P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
10+48.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IPA60R400CEXKSA1 IPA60R400CEXKSA1 INFINEON TECHNOLOGIES IPA60R400CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 10.3A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 600V
на замовлення 143 шт:
термін постачання 14-30 дні (днів)
5+91.41 грн
10+87.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPA60R600P6XKSA1 IPA60R600P6XKSA1 INFINEON TECHNOLOGIES IPA60R600P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
8+63.22 грн
10+47.97 грн
50+42.10 грн
100+40.59 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPA60R230P6XKSA1 IPA60R230P6XKSA1 INFINEON TECHNOLOGIES IPA60R230P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
3+172.50 грн
10+123.28 грн
Мінімальне замовлення: 3
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BSC014N04LSATMA1 BSC014N04LS-DTE.pdf
BSC014N04LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC014N04LSTATMA1 Infineon-BSC014N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e5cba2cb8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 33A; 3W; TDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 3W
Case: TDFN8
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 85nC
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BSC014NE2LSIATMA1 BSC014NE2LSI-DTE.pdf
BSC014NE2LSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BSZ014NE2LS5IFATMA1 BSZ014NE2LS5IF-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.45mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IRFR3710ZTRPBF IRFR3710ZTRPBF.pdf
IRFR3710ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 1316 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+138.18 грн
5+106.68 грн
10+94.18 грн
25+78.33 грн
50+68.27 грн
100+59.96 грн
250+51.74 грн
500+47.05 грн
1000+43.44 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BFR182WH6327XTSA1 BFR182WH6327.pdf
BFR182WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.25W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Case: SOT323
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.87 грн
31+13.67 грн
36+11.91 грн
50+10.73 грн
100+9.64 грн
250+8.64 грн
1000+7.97 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
AUIRF3710ZS auirf3710z.pdf
AUIRF3710ZS
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 82nC
On-state resistance: 18mΩ
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IRF7855TRPBF irf7855pbf.pdf
IRF7855TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BFP196E6327HTSA1 Infineon-BFP196-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f02e2b21e7723
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
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BFP196WNH6327XTSA1 Infineon-BFP196WN-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7e7124d1017ed4fc504e2643
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
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BB639E7904HTSA1 BB639_659.pdf
BB639E7904HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
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BFP193WH6327 BFP193WH6327-dte.pdf
BFP193WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
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ICL8800XUMA1 ICL88xx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
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ICL8810XUMA1 ICL88xx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
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ICL8820XUMA1 ICL88xx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
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IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRL1004PBF irl1004pbf.pdf
IRL1004PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+150.83 грн
5+123.28 грн
10+115.73 грн
15+110.70 грн
25+105.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFU024NPBF irfr024n.pdf
IRFU024NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Technology: HEXFET®
On-state resistance: 75mΩ
Gate-source voltage: ±20V
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IKFW60N65ES5XKSA1 Infineon-IKFW60N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d97303931f06
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Turn-on switching energy: 1.23mJ
Gate-emitter voltage: ±20V
Power dissipation: 138W
Collector current: 77A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Technology: Field Stop; Trench
Gate charge: 0.12µC
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IKW75N65RH5XKSA1 Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
240+407.33 грн
Мінімальне замовлення: 240
В кошику  од. на суму  грн.
IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-4
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-4
Mounting: THT
Gate charge: 168nC
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
240+445.26 грн
Мінімальне замовлення: 240
В кошику  од. на суму  грн.
CY4500 Infineon-CY4500_EZ-PD_Protocol_Analyzer_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efe85ab14e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY4500
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB B micro; USB C plug; USB C socket
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CY4533 download
CY4533
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board
Type of development kit: Cypress
Connection: USB C socket
Kind of module: evaluation board
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CY3280-MBR3 download
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Arduino
Type of development kit: Cypress
Connection: USB
Application - series/manufacturer: Arduino
Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor
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CY8CPROTO-062-4343W Infineon-CY8CPROTO-062-4343W_PSoC_6_Wi-Fi_BT_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0118571844&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi
Type of development kit: Cypress
Connection: microSD; USB
Kind of module: Bluetooth; prototype board; WiFi
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2EDL05N06PJXUMA1 2EDL05x06xx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Technology: EiceDRIVER™
Supply voltage: 10...20V
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Voltage class: 600V
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IRFR5505TRPBF description irfr5505.pdf
IRFR5505TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1792 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+95.74 грн
6+70.78 грн
10+60.89 грн
25+48.98 грн
50+41.68 грн
100+36.06 грн
500+27.93 грн
1000+25.75 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
EVAL-IMM101T-015TOBO1 (SP004177748) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-015TOBO1 (SP004177748)
+1
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Type of development kit: evaluation
Kit contents: prototype board
Components: IMM101T-015M
Interface: GPIO; I2C; PWM; UART
Connection: screw terminal x2
Kind of module: motor driver
Application: motors
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+4407.43 грн
В кошику  од. на суму  грн.
EVAL-IMM101T-046TOBO1 (SP004177752) EVALIMM101T015TOBO.PDF
EVAL-IMM101T-046TOBO1 (SP004177752)
+2
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Interface: GPIO; I2C; PWM; UART
Components: IMM101T-046M
Kind of module: motor driver
Application: motors
Kit contents: prototype board
Connection: screw terminal x2
Type of development kit: evaluation
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BAT6406E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6406E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 6879 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.84 грн
59+7.21 грн
63+6.71 грн
100+5.26 грн
300+4.59 грн
500+4.27 грн
750+4.02 грн
1000+3.84 грн
3000+3.46 грн
Мінімальне замовлення: 42
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IRF250P224 IRF250P224.pdf
IRF250P224
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
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IPD50P04P4L11ATMA2 Infineon-IPD50P04P4L-11-DataSheet-v01_01-EN.pdf?fileId=db3a304329a0f6ee0129db9d1df05c58
IPD50P04P4L11ATMA2
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -200A
Gate charge: 14nC
на замовлення 2335 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+109.28 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD50P04P413ATMA2 Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 58W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Power dissipation: 58W
Case: DPAK; TO252
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
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IPD50P04P413ATMA1 Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhancement
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IR2213SPBF IR2213PBF.pdf
IR2213SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
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XMC1403Q048X0064AAXUMA1 XMC1400-DTE.pdf
XMC1403Q048X0064AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q048X0128AAXUMA1 XMC1400-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q048X0200AAXUMA1 XMC1400-DTE.pdf
XMC1403Q048X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q064X0064AAXUMA1 XMC1400-DTE.pdf
XMC1403Q064X0064AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q064X0128AAXUMA1 XMC1400-DTE.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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XMC1403Q064X0200AAXUMA1 XMC1400-DTE.pdf
XMC1403Q064X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
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S25FS512SDSNFB010 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Application: automotive
Case: WSON8
Type of integrated circuit: FLASH memory
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S25FS512SDSNFI013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
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S25FS512SDSNFV011
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
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IRFHS8242TRPBF irfhs8242pbf.pdf
IRFHS8242TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
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IRFHS8342TRPBF irfhs8342pbf.pdf
IRFHS8342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
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AUIRGP35B60PD AUIRGP35B60PD.pdf
AUIRGP35B60PD
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Mounting: THT
Kind of package: tube
Case: TO247AC
Type of transistor: IGBT
Technology: Trench
Turn-on time: 34ns
Turn-off time: 142ns
Gate charge: 240nC
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 120A
Power dissipation: 123W
Collector-emitter voltage: 600V
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AUIRF7316QTR auirf7316q.pdf
AUIRF7316QTR
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
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TD330N16KOFHPSA2 TD330N16KOF.pdf
TD330N16KOFHPSA2
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
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TT330N16KOF TT330N16KOF.pdf
TT330N16KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPP60R060P7 IPP60R060P7.pdf
IPP60R060P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R190E6XKSA1 IPA60R190E6-DTE.pdf
IPA60R190E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R180P7SXKSA1 IPA60R180P7S.pdf
IPA60R180P7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
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IPA60R180P7XKSA1 IPA60R180P7.pdf
IPA60R180P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
товару немає в наявності
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IPA60R280P6XKSA1 IPA60R280P6-DTE.pdf
IPA60R280P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+158.96 грн
4+138.38 грн
10+105.67 грн
20+90.57 грн
50+88.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R280E6XKSA1 IPA60R280E6-DTE.pdf
IPA60R280E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 306 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+121.93 грн
5+99.80 грн
10+89.74 грн
50+84.70 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA60R380P6XKSA1 IPA60R380P6-DTE.pdf
IPA60R380P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+48.77 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IPA60R400CEXKSA1 IPA60R400CE-DTE.pdf
IPA60R400CEXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 10.3A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 600V
на замовлення 143 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+91.41 грн
10+87.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPA60R600P6XKSA1 IPA60R600P6-DTE.pdf
IPA60R600P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+63.22 грн
10+47.97 грн
50+42.10 грн
100+40.59 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPA60R230P6XKSA1 IPA60R230P6-DTE.pdf
IPA60R230P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+172.50 грн
10+123.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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