Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (128874) > Сторінка 2085 з 2148
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IM393L6E3XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393L6EXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393M6E2XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393M6E3XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393M6EXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393S6E2XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 6A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393S6EXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 6A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393X6E2XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393X6E3XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IM393X6EXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IQE013N04LM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41nC On-state resistance: 1.35mΩ Drain-source voltage: 40V Power dissipation: 107W Drain current: 205A Case: TSON8 Kind of channel: enhancement Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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AUIRGP4062D | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 125W Case: TO247AC Gate-emitter voltage: ±20V Pulsed collector current: 72A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 64ns Turn-off time: 164ns |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
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BB85702VH7902XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA Case: SC79 Capacitance: 0.45...7.2pF Type of diode: varicap Mounting: SMD Features of semiconductor devices: RF Max. off-state voltage: 30V Load current: 20mA Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.2µA |
на замовлення 1847 шт: термін постачання 14-30 дні (днів) |
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IRFP4229PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 44A Power dissipation: 310W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 46mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 524 шт: термін постачання 14-30 дні (днів) |
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IRFP4768PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 66A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 370A Technology: HEXFET® |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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IRFP4321PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 78A Power dissipation: 310W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 15.5mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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TD120N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V Case: BG-SB20-1 Mechanical mounting: screw Electrical mounting: screw Gate current: 100mA Max. forward voltage: 1.75V Load current: 120A Max. load current: 190A Max. off-state voltage: 1.6kV Max. forward impulse current: 2.25kA Semiconductor structure: double series Type of semiconductor module: diode-thyristor |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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BCR129WH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BCR129E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BCR133SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Base-emitter resistor: 10kΩ Base resistor: 10kΩ Frequency: 130MHz Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Case: SOT363 Collector current: 0.1A Power dissipation: 0.25W |
на замовлення 14903 шт: термін постачання 14-30 дні (днів) |
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IPP200N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3 Mounting: THT Power dissipation: 150W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 50A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 20mΩ |
на замовлення 464 шт: термін постачання 14-30 дні (днів) |
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IRFML8244TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 5.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 5.4nC Kind of channel: enhancement Technology: HEXFET® |
на замовлення 527 шт: термін постачання 14-30 дні (днів) |
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IPP60R385CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3 Polarisation: unipolar Technology: CoolMOS™ CP Drain current: 9A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 0.385Ω Mounting: THT Power dissipation: 83W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB60R385CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3 Polarisation: unipolar Technology: CoolMOS™ CP Drain current: 9A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO263-3 On-state resistance: 0.385Ω Mounting: SMD Power dissipation: 83W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPD60R385CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Polarisation: unipolar Technology: CoolMOS™ CP Drain current: 5.7A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO252 On-state resistance: 0.385Ω Mounting: SMD Pulsed drain current: 27A Power dissipation: 83W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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IPL60R385CPAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4 Polarisation: unipolar Technology: CoolMOS™ CP Drain current: 9A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-VSON-4 On-state resistance: 0.385Ω Mounting: SMD Power dissipation: 83W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS116E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 0.6µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C4125LTI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 24MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: QFN68 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 55 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4245LTI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH Operating temperature: -40...85°C Type of integrated circuit: PSoC microcontroller Case: QFN68 Integrated circuit features: CapSense; LCD controller Mounting: SMD Kind of core: 32-bit Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 55 Memory: 4kB SRAM; 32kB FLASH Clock frequency: 48MHz Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | ||||||||||||||
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AIKW75N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 225A Turn-on time: 69ns Turn-off time: 365ns Gate charge: 470nC Technology: TRENCHSTOP™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ITS4200SMEPHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 Supply voltage: 11...45V DC Technology: Industrial PROFET Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 0.15Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CYPD3177-24LQXQ | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: interface; I2C; transceiver; QFN24; 10mA; USB Type of integrated circuit: interface Interface: I2C Kind of integrated circuit: transceiver Data transfer rate: 1Mbps Case: QFN24 Mounting: SMD Operating temperature: -40...105°C DC supply current: 10mA Application: USB |
на замовлення 670 шт: термін постачання 14-30 дні (днів) |
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| EVALPSIR2085TOBO1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - UnclassifiedDescription: EVALPSIR2085TOBO1 |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Drain current: 90mA Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT89 On-state resistance: 45Ω |
на замовлення 862 шт: термін постачання 14-30 дні (днів) |
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IRFR3806TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK Mounting: SMD Power dissipation: 71W Polarisation: unipolar Technology: HEXFET® Drain current: 43A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel Case: DPAK |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
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IPP17N25S3100AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 13.3A Pulsed drain current: 68A Power dissipation: 107W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ T |
на замовлення 482 шт: термін постачання 14-30 дні (днів) |
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IPB65R190CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: D2PAK; TO263 On-state resistance: 171mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Polarisation: unipolar Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IPB65R190C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 650V Drain current: 13A Power dissipation: 72W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB65R190CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD65R190C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.2A Power dissipation: 28W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPL65R190E6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPA60R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 22W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 26A Version: ESD Kind of package: tube |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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IPD60R360P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 41W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPD60R360P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 41W Case: DPAK; TO252 On-state resistance: 0.36Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| IPD60R360P7SE8228AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 41W Case: DPAK3 On-state resistance: 702mΩ Mounting: SMD Gate charge: 13nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| IPD60R360PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A Type of transistor: N-MOSFET On-state resistance: 715mΩ Mounting: SMD Pulsed drain current: 24A Power dissipation: 43W Polarisation: unipolar Version: ESD Technology: CoolMOS™ PFD7 Drain current: 6A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Case: PG-TO252-3 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| IPN60R360P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 7W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 26A Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
|
IPB013N06NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 60V Drain current: 198A Power dissipation: 300W Case: D2PAK; TO263 On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 203nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| S25FL064LABMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 64Mb FLASH Operating frequency: 108MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC8 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2100 шт В кошику од. на суму грн. | |||||||||||||||
| S25FL128LAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 128Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC8 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2100 шт В кошику од. на суму грн. | |||||||||||||||
| S25FL128LAGNFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 128Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: WSON8 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
| S25FL128SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 128Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC16 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | |||||||||||||||
| S25FL256SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | |||||||||||||||
| S25FL512SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC16 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | |||||||||||||||
| S25FL512SDSMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 80MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC16 Interface: QUAD SPI Operating voltage: 2.7...3.6V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | |||||||||||||||
| S25FS512SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 133MHz Kind of interface: serial Kind of package: reel; tape Case: SOIC16 Interface: QUAD SPI Operating voltage: 1.7...2V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | |||||||||||||||
| S25FS512SDSNFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 80MHz Kind of interface: serial Kind of package: reel; tape Case: WSON8 Interface: QUAD SPI Operating voltage: 1.7...2V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| S28HL512TFPBHB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 166MHz Kind of interface: serial Kind of package: reel; tape Case: BGA24 Interface: octal Operating voltage: 2.7...3.6V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| S28HS512TGABHB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Application: automotive Memory: 512Mb FLASH Operating frequency: 200MHz Kind of interface: serial Kind of package: reel; tape Case: BGA24 Interface: octal Operating voltage: 1.7...2V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| S29GL128S10DHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel Operating temperature: -40...105°C Mounting: SMD Access time: 100ns Type of integrated circuit: FLASH memory Application: automotive Memory: 128Mb FLASH Kind of interface: parallel Kind of package: reel; tape Case: BGA64 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. |
| IM393L6E3XKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393L6EXKLA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393M6E2XKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393M6E3XKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393M6EXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393S6E2XKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393S6EXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393X6E2XKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393X6E3XKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IM393X6EXKLA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
товару немає в наявності
В кошику
од. на суму грн.
| IQE013N04LM6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 1.35mΩ
Drain-source voltage: 40V
Power dissipation: 107W
Drain current: 205A
Case: TSON8
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 1.35mΩ
Drain-source voltage: 40V
Power dissipation: 107W
Drain current: 205A
Case: TSON8
Kind of channel: enhancement
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| AUIRGP4062D |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику
од. на суму грн.
| BB85702VH7902XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Case: SC79
Capacitance: 0.45...7.2pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Case: SC79
Capacitance: 0.45...7.2pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2µA
на замовлення 1847 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.11 грн |
| 25+ | 17.00 грн |
| 28+ | 15.27 грн |
| 100+ | 10.89 грн |
| 500+ | 8.58 грн |
| 1000+ | 8.17 грн |
| IRFP4229PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 524 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.23 грн |
| 10+ | 155.15 грн |
| 25+ | 148.55 грн |
| 100+ | 141.12 грн |
| 200+ | 132.04 грн |
| 400+ | 123.79 грн |
| 500+ | 121.32 грн |
| IRFP4768PBFXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 370A
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 370A
Technology: HEXFET®
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 475.49 грн |
| 10+ | 231.08 грн |
| 25+ | 205.49 грн |
| 50+ | 190.64 грн |
| IRFP4321PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 175.98 грн |
| 10+ | 145.25 грн |
| TD120N16SOFHPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2099.26 грн |
| 5+ | 1794.16 грн |
| BCR129WH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BCR129E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BCR133SH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
на замовлення 14903 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 49+ | 9.24 грн |
| 72+ | 5.74 грн |
| 250+ | 4.57 грн |
| 1000+ | 4.43 грн |
| 3000+ | 4.33 грн |
| IPP200N15N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 20mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 20mΩ
на замовлення 464 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.08 грн |
| 10+ | 129.57 грн |
| 11+ | 90.78 грн |
| 29+ | 85.83 грн |
| IRFML8244TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 527 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.11 грн |
| 28+ | 15.19 грн |
| 31+ | 13.45 грн |
| 100+ | 10.48 грн |
| 500+ | 8.50 грн |
| IPP60R385CPXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.385Ω
Mounting: THT
Power dissipation: 83W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.385Ω
Mounting: THT
Power dissipation: 83W
товару немає в наявності
В кошику
од. на суму грн.
| IPB60R385CPATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 0.385Ω
Mounting: SMD
Power dissipation: 83W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 0.385Ω
Mounting: SMD
Power dissipation: 83W
товару немає в наявності
В кошику
од. на суму грн.
| IPD60R385CPATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 5.7A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252
On-state resistance: 0.385Ω
Mounting: SMD
Pulsed drain current: 27A
Power dissipation: 83W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 5.7A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO252
On-state resistance: 0.385Ω
Mounting: SMD
Pulsed drain current: 27A
Power dissipation: 83W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPL60R385CPAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-VSON-4
On-state resistance: 0.385Ω
Mounting: SMD
Power dissipation: 83W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-VSON-4
On-state resistance: 0.385Ω
Mounting: SMD
Power dissipation: 83W
товару немає в наявності
В кошику
од. на суму грн.
| BAS116E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4125LTI-M445 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: QFN68
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: QFN68
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 260 шт
В кошику
од. на суму грн.
| CY8C4245LTI-M445 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
товару немає в наявності
Мінімальне замовлення: 260 шт
В кошику
од. на суму грн.
| AIKW75N60CTXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 365ns
Gate charge: 470nC
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
Turn-on time: 69ns
Turn-off time: 365ns
Gate charge: 470nC
Technology: TRENCHSTOP™
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| ITS4200SMEPHUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.15Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.15Ω
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од. на суму грн.
| CYPD3177-24LQXQ |
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Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: transceiver
Data transfer rate: 1Mbps
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 10mA
Application: USB
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: transceiver
Data transfer rate: 1Mbps
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 10mA
Application: USB
на замовлення 670 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 490+ | 111.98 грн |
| EVALPSIR2085TOBO1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12904.85 грн |
| BSS225H6327FTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 90mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT89
On-state resistance: 45Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 90mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT89
On-state resistance: 45Ω
на замовлення 862 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.44 грн |
| 13+ | 33.84 грн |
| 15+ | 28.14 грн |
| 100+ | 14.77 грн |
| IRFR3806TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Mounting: SMD
Power dissipation: 71W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Mounting: SMD
Power dissipation: 71W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.83 грн |
| 6+ | 81.70 грн |
| 10+ | 71.80 грн |
| 35+ | 27.23 грн |
| 96+ | 25.75 грн |
| IPP17N25S3100AKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 13.3A
Pulsed drain current: 68A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ T
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 13.3A
Pulsed drain current: 68A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ T
на замовлення 482 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.09 грн |
| 4+ | 133.70 грн |
| 10+ | 124.62 грн |
| IPB65R190CFDAATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Polarisation: unipolar
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| IPB65R190C7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| IPB65R190CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R190C7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPL65R190E6AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| IPA60R360P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
Kind of package: tube
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.65 грн |
| 10+ | 48.61 грн |
| IPD60R360P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD60R360P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD60R360P7SE8228AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK3
On-state resistance: 702mΩ
Mounting: SMD
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK3
On-state resistance: 702mΩ
Mounting: SMD
Gate charge: 13nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPD60R360PFD7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
On-state resistance: 715mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 43W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ PFD7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
On-state resistance: 715mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 43W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ PFD7
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPN60R360P7SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPB013N06NF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 203nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 203nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| S25FL064LABMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 64Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 64Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2100 шт
В кошику
од. на суму грн.
| S25FL128LAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2100 шт
В кошику
од. на суму грн.
| S25FL128LAGNFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| S25FL128SAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FL256SAGMFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FL512SAGMFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FL512SDSMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FS512SAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 133MHz
Kind of interface: serial
Kind of package: reel; tape
Case: SOIC16
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FS512SDSNFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 80MHz
Kind of interface: serial
Kind of package: reel; tape
Case: WSON8
Interface: QUAD SPI
Operating voltage: 1.7...2V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S28HL512TFPBHB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 166MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 2.7...3.6V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S28HS512TGABHB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 200MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 1.7...2V
Kind of memory: NOR
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 512Mb FLASH
Operating frequency: 200MHz
Kind of interface: serial
Kind of package: reel; tape
Case: BGA24
Interface: octal
Operating voltage: 1.7...2V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S29GL128S10DHB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 100ns
Type of integrated circuit: FLASH memory
Application: automotive
Memory: 128Mb FLASH
Kind of interface: parallel
Kind of package: reel; tape
Case: BGA64
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику
од. на суму грн.






















