Продукція > ONSEMI > Всі товари виробника ONSEMI (142687) > Сторінка 310 з 2379

Обрати Сторінку:   [  << Попередня Сторінка ]  1 237 305 306 307 308 309 310 311 312 313 314 315 474 711 948 1185 1422 1659 1896 2133 2370 2379  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
MGSF1N03LT3G MGSF1N03LT3G onsemi mgsf1n03lt1-d.pdf Description: MOSFET N-CH 30V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
товару немає в наявності
В кошику  од. на суму  грн.
MJ11012G MJ11012G onsemi mj11012-d.pdf Description: TRANS NPN DARL 60V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
на замовлення 1146 шт:
термін постачання 21-31 дні (днів)
1+636.16 грн
10+420.78 грн
100+312.39 грн
500+261.62 грн
В кошику  од. на суму  грн.
MJ11021 MJ11021 onsemi mj11021-d.pdf Description: TRANS PNP DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ11021G MJ11021G onsemi mj11021-d.pdf Description: TRANS PNP DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
1+743.88 грн
10+495.64 грн
В кошику  од. на суму  грн.
MJ11022 MJ11022 onsemi mj11021-d.pdf Description: TRANS NPN DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ11022G MJ11022G onsemi mj11021-d.pdf Description: TRANS NPN DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
1+676.75 грн
10+448.66 грн
В кошику  од. на суму  грн.
MJ11030 MJ11030 onsemi mj11028-d.pdf Description: TRANS NPN DARL 90V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 300 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ11030G MJ11030G onsemi mj11028-d.pdf Description: TRANS NPN DARL 90V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 300 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ14001G MJ14001G onsemi mj14001-d.pdf Description: TRANS PNP 60V 60A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 12A, 60A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50A, 3V
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ2955G MJ2955G onsemi 2n3055-d.pdf Description: TRANS PNP 60V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 115 W
на замовлення 1332 шт:
термін постачання 21-31 дні (днів)
1+401.21 грн
10+259.10 грн
100+186.80 грн
500+146.39 грн
1000+141.79 грн
В кошику  од. на суму  грн.
MJB41CT4 MJB41CT4 onsemi mjb41c-d.pdf Description: TRANS NPN 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
MJB41CT4G MJB41CT4G onsemi mjb41c-d.pdf Description: TRANS NPN 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
800+41.72 грн
1600+36.99 грн
2400+35.37 грн
4000+31.48 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
MJB44H11T4G MJB44H11T4G onsemi mjb44h11-d.pdf Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+44.83 грн
1600+39.80 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
MJB45H11 MJB45H11 onsemi mjb44h11-d.pdf Description: TRANS PNP 80V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
MJB45H11G MJB45H11G onsemi mjb44h11-d.pdf Description: TRANS PNP 80V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
3+132.70 грн
50+61.59 грн
100+55.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJB45H11T4G MJB45H11T4G onsemi mjb44h11-d.pdf Description: TRANS PNP 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+40.36 грн
1600+35.77 грн
2400+34.20 грн
4000+30.43 грн
5600+29.45 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
MJD112G MJD112G onsemi mjd112-d.pdf Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)
5+68.69 грн
75+28.39 грн
150+25.22 грн
525+19.42 грн
1050+17.58 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD112RL MJD112RL onsemi mjd112-d.pdf Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD112RLG MJD112RLG onsemi mjd112-d.pdf Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
1800+29.48 грн
3600+26.26 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD117 MJD117 onsemi mjd112-d.pdf Description: TRANS PNP DARL 100V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD117-001 MJD117-001 onsemi mjd112-d.pdf Description: TRANS PNP DARL 100V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD117-1G MJD117-1G onsemi mjd112-d.pdf Description: TRANS PNP DARL 100V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD117G MJD117G onsemi mjd112-d.pdf Description: TRANS PNP DARL 100V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
4+92.89 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD122G MJD122G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
на замовлення 5096 шт:
термін постачання 21-31 дні (днів)
3+106.94 грн
75+45.54 грн
150+40.76 грн
525+31.87 грн
1050+29.11 грн
2025+26.90 грн
5025+23.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJD127G MJD127G onsemi mjd122-d.pdf Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
3+111.62 грн
75+47.99 грн
150+42.99 грн
525+33.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJD128T4 MJD128T4 onsemi MJD128T4%20Rev0.pdf Description: TRANS PNP DARL 120V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD148T4G MJD148T4G onsemi mjd148-d.pdf Description: TRANS NPN 45V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.75 W
на замовлення 277500 шт:
термін постачання 21-31 дні (днів)
2500+21.20 грн
5000+18.83 грн
7500+18.02 грн
12500+16.06 грн
17500+15.79 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MJD18002D2T4G MJD18002D2T4G onsemi mjd18002d2-d.pdf Description: TRANS NPN 450V 2A DPAK
товару немає в наявності
В кошику  од. на суму  грн.
MJD200G MJD200G onsemi mjd200-d.pdf Description: TRANS NPN 25V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
на замовлення 23020 шт:
термін постачання 21-31 дні (днів)
5+70.25 грн
10+42.17 грн
100+27.56 грн
500+19.92 грн
1000+18.01 грн
2000+16.40 грн
5000+14.41 грн
10000+13.35 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD200RLG MJD200RLG onsemi mjd200-d.pdf Description: TRANS NPN 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
1800+19.52 грн
3600+17.26 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD210 MJD210 onsemi mjd200-d.pdf Description: TRANS PNP 25V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD210G MJD210G onsemi mjd200-d.pdf Description: TRANS PNP 25V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
на замовлення 16280 шт:
термін постачання 21-31 дні (днів)
6+55.42 грн
75+25.61 грн
150+23.02 грн
525+18.07 грн
1050+16.50 грн
2025+15.24 грн
5025+13.56 грн
10050+12.75 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MJD210RL MJD210RL onsemi mjd200-d.pdf Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD210RLG MJD210RLG onsemi mjd200-d.pdf Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD243 MJD243 onsemi mjd243-d.pdf Description: TRANS NPN 100V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD243G MJD243G onsemi mjd243-d.pdf Description: TRANS NPN 100V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
на замовлення 14656 шт:
термін постачання 21-31 дні (днів)
4+93.67 грн
75+39.24 грн
150+34.97 грн
525+27.10 грн
1050+24.63 грн
2025+22.64 грн
5025+20.05 грн
10050+18.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD253-001 MJD253-001 onsemi mjd243-d.pdf Description: TRANS PNP 100V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: I-PAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD253-1G MJD253-1G onsemi mjd243-d.pdf Description: TRANS PNP 100V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
4+78.84 грн
75+32.78 грн
150+29.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD2955 MJD2955 onsemi mjd2955-d.pdf Description: TRANS PNP 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD2955-001 MJD2955-001 onsemi mjd2955-d.pdf Description: TRANS PNP 60V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: I-PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD2955-1G MJD2955-1G onsemi mjd2955-d.pdf Description: TRANS PNP 60V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: I-PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD2955G MJD2955G onsemi mjd2955-d.pdf Description: TRANS PNP 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
на замовлення 1933 шт:
термін постачання 21-31 дні (днів)
4+90.55 грн
75+38.36 грн
150+34.24 грн
525+26.62 грн
1050+24.23 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD3055 MJD3055 onsemi mjd2955-d.pdf Description: TRANS NPN 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD3055G MJD3055G onsemi mjd2955-d.pdf Description: TRANS NPN 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD31C1 MJD31C1 onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD31C1G MJD31C1G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD31CG MJD31CG onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 6414 шт:
термін постачання 21-31 дні (днів)
4+94.45 грн
75+39.81 грн
150+35.55 грн
525+27.67 грн
1050+25.21 грн
2025+23.23 грн
5025+20.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD31CRL MJD31CRL onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD31CRLG MJD31CRLG onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+26.07 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD31T4G MJD31T4G onsemi mjd31-d.pdf Description: TRANS NPN 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+27.81 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MJD32CG MJD32CG onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 10023 шт:
термін постачання 21-31 дні (днів)
5+77.28 грн
75+32.41 грн
150+28.85 грн
525+22.31 грн
1050+20.24 грн
2025+18.59 грн
5025+16.43 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD32CRL MJD32CRL onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD32CRLG MJD32CRLG onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 50400 шт:
термін постачання 21-31 дні (днів)
1800+25.98 грн
3600+23.09 грн
5400+22.11 грн
9000+19.71 грн
12600+19.52 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD32T4G MJD32T4G onsemi mjd31-d.pdf Description: TRANS PNP 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+24.61 грн
5000+21.94 грн
7500+21.04 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MJD340 MJD340 onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD340G MJD340G onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
на замовлення 9994 шт:
термін постачання 21-31 дні (днів)
5+74.93 грн
75+31.09 грн
150+27.65 грн
525+21.34 грн
1050+19.35 грн
2025+17.75 грн
5025+15.66 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD340RLG MJD340RLG onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
на замовлення 19100 шт:
термін постачання 21-31 дні (днів)
1800+20.28 грн
3600+17.93 грн
5400+17.12 грн
9000+15.21 грн
12600+14.71 грн
18000+14.39 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD350G MJD350G onsemi mjd340-d.pdf Description: TRANS PNP 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD41CRLG MJD41CRLG onsemi mjd41c-d.pdf Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
1800+21.67 грн
3600+19.17 грн
5400+18.31 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD42C MJD42C onsemi mjd41c-d.pdf description Description: TRANS PNP 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MGSF1N03LT3G mgsf1n03lt1-d.pdf
MGSF1N03LT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
товару немає в наявності
В кошику  од. на суму  грн.
MJ11012G mj11012-d.pdf
MJ11012G
Виробник: onsemi
Description: TRANS NPN DARL 60V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
на замовлення 1146 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+636.16 грн
10+420.78 грн
100+312.39 грн
500+261.62 грн
В кошику  од. на суму  грн.
MJ11021 mj11021-d.pdf
MJ11021
Виробник: onsemi
Description: TRANS PNP DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ11021G mj11021-d.pdf
MJ11021G
Виробник: onsemi
Description: TRANS PNP DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+743.88 грн
10+495.64 грн
В кошику  од. на суму  грн.
MJ11022 mj11021-d.pdf
MJ11022
Виробник: onsemi
Description: TRANS NPN DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ11022G mj11021-d.pdf
MJ11022G
Виробник: onsemi
Description: TRANS NPN DARL 250V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 175 W
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+676.75 грн
10+448.66 грн
В кошику  од. на суму  грн.
MJ11030 mj11028-d.pdf
MJ11030
Виробник: onsemi
Description: TRANS NPN DARL 90V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 300 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ11030G mj11028-d.pdf
MJ11030G
Виробник: onsemi
Description: TRANS NPN DARL 90V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 300 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ14001G mj14001-d.pdf
MJ14001G
Виробник: onsemi
Description: TRANS PNP 60V 60A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 12A, 60A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50A, 3V
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 W
товару немає в наявності
В кошику  од. на суму  грн.
MJ2955G 2n3055-d.pdf
MJ2955G
Виробник: onsemi
Description: TRANS PNP 60V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 115 W
на замовлення 1332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+401.21 грн
10+259.10 грн
100+186.80 грн
500+146.39 грн
1000+141.79 грн
В кошику  од. на суму  грн.
MJB41CT4 mjb41c-d.pdf
MJB41CT4
Виробник: onsemi
Description: TRANS NPN 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
MJB41CT4G mjb41c-d.pdf
MJB41CT4G
Виробник: onsemi
Description: TRANS NPN 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+41.72 грн
1600+36.99 грн
2400+35.37 грн
4000+31.48 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
MJB44H11T4G mjb44h11-d.pdf
MJB44H11T4G
Виробник: onsemi
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+44.83 грн
1600+39.80 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
MJB45H11 mjb44h11-d.pdf
MJB45H11
Виробник: onsemi
Description: TRANS PNP 80V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
MJB45H11G mjb44h11-d.pdf
MJB45H11G
Виробник: onsemi
Description: TRANS PNP 80V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 149 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.70 грн
50+61.59 грн
100+55.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJB45H11T4G mjb44h11-d.pdf
MJB45H11T4G
Виробник: onsemi
Description: TRANS PNP 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+40.36 грн
1600+35.77 грн
2400+34.20 грн
4000+30.43 грн
5600+29.45 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
MJD112G mjd112-d.pdf
MJD112G
Виробник: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+68.69 грн
75+28.39 грн
150+25.22 грн
525+19.42 грн
1050+17.58 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD112RL mjd112-d.pdf
MJD112RL
Виробник: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD112RLG mjd112-d.pdf
MJD112RLG
Виробник: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+29.48 грн
3600+26.26 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD117 mjd112-d.pdf
MJD117
Виробник: onsemi
Description: TRANS PNP DARL 100V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD117-001 mjd112-d.pdf
MJD117-001
Виробник: onsemi
Description: TRANS PNP DARL 100V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD117-1G mjd112-d.pdf
MJD117-1G
Виробник: onsemi
Description: TRANS PNP DARL 100V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD117G mjd112-d.pdf
MJD117G
Виробник: onsemi
Description: TRANS PNP DARL 100V 2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.89 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD122G mjd122-d.pdf
MJD122G
Виробник: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
на замовлення 5096 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+106.94 грн
75+45.54 грн
150+40.76 грн
525+31.87 грн
1050+29.11 грн
2025+26.90 грн
5025+23.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJD127G mjd122-d.pdf
MJD127G
Виробник: onsemi
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 578 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.62 грн
75+47.99 грн
150+42.99 грн
525+33.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJD128T4 MJD128T4%20Rev0.pdf
MJD128T4
Виробник: onsemi
Description: TRANS PNP DARL 120V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD148T4G mjd148-d.pdf
MJD148T4G
Виробник: onsemi
Description: TRANS NPN 45V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.75 W
на замовлення 277500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+21.20 грн
5000+18.83 грн
7500+18.02 грн
12500+16.06 грн
17500+15.79 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MJD18002D2T4G mjd18002d2-d.pdf
MJD18002D2T4G
Виробник: onsemi
Description: TRANS NPN 450V 2A DPAK
товару немає в наявності
В кошику  од. на суму  грн.
MJD200G mjd200-d.pdf
MJD200G
Виробник: onsemi
Description: TRANS NPN 25V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
на замовлення 23020 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.25 грн
10+42.17 грн
100+27.56 грн
500+19.92 грн
1000+18.01 грн
2000+16.40 грн
5000+14.41 грн
10000+13.35 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD200RLG mjd200-d.pdf
MJD200RLG
Виробник: onsemi
Description: TRANS NPN 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+19.52 грн
3600+17.26 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD210 mjd200-d.pdf
MJD210
Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD210G mjd200-d.pdf
MJD210G
Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
на замовлення 16280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.42 грн
75+25.61 грн
150+23.02 грн
525+18.07 грн
1050+16.50 грн
2025+15.24 грн
5025+13.56 грн
10050+12.75 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MJD210RL mjd200-d.pdf
MJD210RL
Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD210RLG mjd200-d.pdf
MJD210RLG
Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD243 mjd243-d.pdf
MJD243
Виробник: onsemi
Description: TRANS NPN 100V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD243G mjd243-d.pdf
MJD243G
Виробник: onsemi
Description: TRANS NPN 100V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
на замовлення 14656 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.67 грн
75+39.24 грн
150+34.97 грн
525+27.10 грн
1050+24.63 грн
2025+22.64 грн
5025+20.05 грн
10050+18.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD253-001 mjd243-d.pdf
MJD253-001
Виробник: onsemi
Description: TRANS PNP 100V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: I-PAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD253-1G mjd243-d.pdf
MJD253-1G
Виробник: onsemi
Description: TRANS PNP 100V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.84 грн
75+32.78 грн
150+29.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD2955 mjd2955-d.pdf
MJD2955
Виробник: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD2955-001 mjd2955-d.pdf
MJD2955-001
Виробник: onsemi
Description: TRANS PNP 60V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: I-PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD2955-1G mjd2955-d.pdf
MJD2955-1G
Виробник: onsemi
Description: TRANS PNP 60V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: I-PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD2955G mjd2955-d.pdf
MJD2955G
Виробник: onsemi
Description: TRANS PNP 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
на замовлення 1933 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.55 грн
75+38.36 грн
150+34.24 грн
525+26.62 грн
1050+24.23 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD3055 mjd2955-d.pdf
MJD3055
Виробник: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD3055G mjd2955-d.pdf
MJD3055G
Виробник: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD31C1 mjd31-d.pdf
MJD31C1
Виробник: onsemi
Description: TRANS NPN 100V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD31C1G mjd31-d.pdf
MJD31C1G
Виробник: onsemi
Description: TRANS NPN 100V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD31CG mjd31-d.pdf
MJD31CG
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 6414 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.45 грн
75+39.81 грн
150+35.55 грн
525+27.67 грн
1050+25.21 грн
2025+23.23 грн
5025+20.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MJD31CRL mjd31-d.pdf
MJD31CRL
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD31CRLG mjd31-d.pdf
MJD31CRLG
Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+26.07 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD31T4G mjd31-d.pdf
MJD31T4G
Виробник: onsemi
Description: TRANS NPN 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+27.81 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MJD32CG mjd31-d.pdf
MJD32CG
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 10023 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.28 грн
75+32.41 грн
150+28.85 грн
525+22.31 грн
1050+20.24 грн
2025+18.59 грн
5025+16.43 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD32CRL mjd31-d.pdf
MJD32CRL
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD32CRLG mjd31-d.pdf
MJD32CRLG
Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
на замовлення 50400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+25.98 грн
3600+23.09 грн
5400+22.11 грн
9000+19.71 грн
12600+19.52 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD32T4G mjd31-d.pdf
MJD32T4G
Виробник: onsemi
Description: TRANS PNP 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+24.61 грн
5000+21.94 грн
7500+21.04 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MJD340 mjd340-d.pdf
MJD340
Виробник: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD340G mjd340-d.pdf
MJD340G
Виробник: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
на замовлення 9994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.93 грн
75+31.09 грн
150+27.65 грн
525+21.34 грн
1050+19.35 грн
2025+17.75 грн
5025+15.66 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJD340RLG mjd340-d.pdf
MJD340RLG
Виробник: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
на замовлення 19100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+20.28 грн
3600+17.93 грн
5400+17.12 грн
9000+15.21 грн
12600+14.71 грн
18000+14.39 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD350G mjd340-d.pdf
MJD350G
Виробник: onsemi
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
товару немає в наявності
В кошику  од. на суму  грн.
MJD41CRLG mjd41c-d.pdf
MJD41CRLG
Виробник: onsemi
Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+21.67 грн
3600+19.17 грн
5400+18.31 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
MJD42C description mjd41c-d.pdf
MJD42C
Виробник: onsemi
Description: TRANS PNP 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 237 305 306 307 308 309 310 311 312 313 314 315 474 711 948 1185 1422 1659 1896 2133 2370 2379  [ Наступна Сторінка >> ]