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M95256-DFMN6TP M95256-DFMN6TP STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.7÷5.5V; 20MHz; SO8
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 32kx8bit
Case: SO8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
на замовлення 1315 шт:
термін постачання 21-30 дні (днів)
11+40.63 грн
12+35.14 грн
39+23.82 грн
107+22.48 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
M95256-DFCS6TP/K STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.7÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 32kx8bit
Case: WLCSP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-DFDW6TP STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.7÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 32kx8bit
Case: TSSOP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-DFMC6TG STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.7÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 32kx8bit
Case: UFDFPN8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-RDW6TP STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.8...5.5V
Memory organisation: 32kx8bit
Case: TSSOP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-RMC6TG STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.8...5.5V
Memory organisation: 32kx8bit
Case: UFDFPN8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-WDW6TP STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.8...5.5V
Memory organisation: 32kx8bit
Case: TSSOP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-DRDW8TP/K STMicroelectronics en.DM00159861.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
на замовлення 43898 шт:
термін постачання 21-30 дні (днів)
4000+49.10 грн
Мінімальне замовлення: 4000
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STL80N10WF7 STMicroelectronics Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 60A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 60A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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STH200N10WF7-2 STMicroelectronics sth200n10wf7-2.pdf Category: Transistors - Unclassified
Description: STH200N10WF7-2
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+298.82 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STGD6NC60H-1 STMicroelectronics en.DM00096283.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; IPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: IPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: tube
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STGD3NB60SDT4 STMicroelectronics STGD3NB60SD.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 3A; 48W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3A
Power dissipation: 48W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 25A
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
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STGD10HF60KD STMicroelectronics en.DM00049493.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62.5W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: ignition systems
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STGD25N40LZAG STMicroelectronics en.DM00431184.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGD3HF60HDT4 STMicroelectronics en.CD00277878.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4.5A
Power dissipation: 38W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGD4H60DF STMicroelectronics stgd4h60df.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGD4M65DF2 STMicroelectronics en.DM00249139.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGD7NC60HT4 STMicroelectronics stgd7nc60ht4.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 70W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 70W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
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STGB19NC60HDT4 STGB19NC60HDT4 STMicroelectronics en.CD00144165.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 978 шт:
термін постачання 21-30 дні (днів)
2+270.88 грн
10+165.07 грн
11+87.25 грн
30+82.53 грн
Мінімальне замовлення: 2
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STGB50H65FB2 STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
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STGB10M65DF2 STMicroelectronics en.DM00157911.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6NC60HDT4 STMicroelectronics en.CD00058424.pdf description Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30H60DFB STMicroelectronics en.DM00125119.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 149nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20M65DF2 STMicroelectronics en.DM00244727.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB5H60DF STMicroelectronics en.DM00149621.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20NB41LZT4 STMicroelectronics en.CD00003294.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Version: ESD
Application: automotive industry; ignition systems
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STGB25N36LZAG STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB7NC60HDT4 STMicroelectronics en.CD00003695.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10H60DF STMicroelectronics en.DM00092752.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB14NC60KDT4 STGB14NC60KDT4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A86DF28980D2&compId=stgb14nc60kdt4.pdf?ci_sign=a4291ed7b61f34f9cd59039d39bfacc7fbe2fd4c Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15H60DF STMicroelectronics en.DM00092755.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15M65DF2 STMicroelectronics en.DM00096991.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H60DF STMicroelectronics en.DM00066598.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H65FB2 STMicroelectronics stgb20h65fb2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB20N45LZAG STMicroelectronics en.DM00242156.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry
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STGB25N40LZAG STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD82FEF2D3142140D2&compId=STGB25N40LZAG.pdf?ci_sign=18a4bf6feac287217c1d5109e171aeb80464050f Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB30H60DLLFBAG STMicroelectronics en.DM00336135.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Application: ignition systems
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STGB30M65DF2 STMicroelectronics STGB30M65DF2.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30V60DF STGB30V60DF STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A86DF28CE0D2&compId=stgb30v60df.pdf?ci_sign=f57730d0ce9b95d4f6a63d8dc5ea225de9ee368b Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB3NC120HDT4 STGB3NC120HDT4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEED9389163FE0C7&compId=STGx3NC120HD.pdf?ci_sign=28d109c69ddf7046490206a96c3a4aab61477cc0 Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40V60F STMicroelectronics en.DM00086251.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
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STGB4M65DF2 STMicroelectronics Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6M65DF2 STMicroelectronics en.DM00250133.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7H60DF STMicroelectronics en.DM00164492.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB8NC60KDT4 STMicroelectronics en.CD00171973.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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M93S46-WMN6P M93S46-WMN6P STMicroelectronics en.CD00001175.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
11+38.94 грн
12+33.33 грн
35+26.96 грн
95+25.47 грн
200+24.52 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
M93S46-WMN6TP M93S46-WMN6TP STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818C42D8377800D5&compId=m93s46-w.pdf?ci_sign=8436098e87f4d03a1735a8a211094ee204cb8112 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 64x16bit; 2.5÷5.5V; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 64x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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STN83003 STN83003 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1BB9DD544E469&compId=STN83003.pdf?ci_sign=9853a53cd5c2e737d37892c517ddbbac250a9354 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 2017 шт:
термін постачання 21-30 дні (днів)
8+55.87 грн
13+31.99 грн
50+23.74 грн
70+13.36 грн
191+12.66 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STEVAL-IPM05F STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8CAFA7FBA40C4&compId=STEVAL-IPM05F.pdf?ci_sign=d3b5d4c3b6e859eaebb556838a2a65452b549938 Category: STM development kits
Description: Dev.kit: evaluation; expansion board; Comp: STGIF5CH60TS-L; 3A
Kind of connector: Motor Control Expansion Connector; screw
Kit contents: expansion board
Output current: 3A
Interface: GPIO
Application: motors
Additional functions: speed sensor; temperature sensor
Protection: anti-overload OPP; overheating OTP
Type of development kit: evaluation
Components: STGIF5CH60TS-L
Number of add-on connectors: 1
Operating voltage: 125...400V AC
Power: 500W
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BD139 BD139 STMicroelectronics pVersion=0046&contRep=ZT&docId=E1C0472188447BF1A6F5005056AB5A8F&compId=BD139-10-STMicroelectronics.pdf?ci_sign=6a8d1aea861bc39a3676cb4f48e95f2306074693 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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LD39130SJ12R STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B997BA14BB20D2&compId=ld39130s.pdf?ci_sign=111dd427e10a70e13263765fa26384606f6cce7f Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; flip chip4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2V
Output current: 0.3A
Case: flip chip4
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
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P0109AL 5AA4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8CBF34AF10A060D5&compId=P0109AL.pdf?ci_sign=85690e65da223ffacdb97a4aa774fea238087c92 Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 1uA; SOT23-3; SMD; Ifsm: 7A
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 7A
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Load current: 0.16A
Gate current: 1µA
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P0109DA 5AL3 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8CBF36D568B940D5&compId=P0109DA.pdf?ci_sign=2e5446996bb5ee4996b0ae46ecf467d41ad51e24 Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 1uA; TO92; THT; tape; Ifsm: 8A
Case: TO92
Mounting: THT
Kind of package: tape
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 1µA
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TSB622IQ3T STMicroelectronics tsb622.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.7MHz; Ch: 2; DFN3x3; 2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.7MHz
Mounting: SMT
Number of channels: 2
Case: DFN3x3
Slew rate: 530mV/μs
Operating temperature: -40...125°C
Input offset voltage: -1...1mV
Voltage supply range: 2.7...36V DC
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 15nA
Input offset current: 3nA
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VIPER012HSTR STMicroelectronics en.DM00255197.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 240mA; 120kHz; SSOP10; boost,buck,buck-boost,flyback
Mounting: SMD
Operating temperature: -40...150°C
Output current: 240mA
Input voltage: 4.5...30V
Breakdown voltage: 800V
Frequency: 120kHz
Topology: boost; buck; buck-boost; flyback
Case: SSOP10
Type of integrated circuit: PMIC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+108.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
T635T-8FP T635T-8FP STMicroelectronics en.DM00077120.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 47A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 47A
Technology: Snubberless™
Mounting: THT
Kind of package: tube
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SM6T56AY SM6T56AY STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB82531ED9A5CBFC6AB36D3820&compId=SM6TxxY.pdf?ci_sign=d7cb0a2306b640a208529662b96dbcd1761813a9 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56V; 7.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.6V
Breakdown voltage: 56V
Max. forward impulse current: 7.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 645 шт:
термін постачання 21-30 дні (днів)
16+27.09 грн
18+21.85 грн
25+20.28 грн
100+17.92 грн
109+8.57 грн
298+8.10 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
LSM6DSOTR STMicroelectronics lsm6dso.pdf Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer
Type of sensor: accelerometer
на замовлення 59742 шт:
термін постачання 21-30 дні (днів)
5000+213.32 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
STM32MP151AAC3 STMicroelectronics stm32mp151a.pdf Category: Unclassified
Description: STM32MP151AAC3
на замовлення 945 шт:
термін постачання 21-30 дні (днів)
189+642.50 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
M24C02-RMN6P M24C02-RMN6P STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818B7C1A0536C0D5&compId=m24c01-r.pdf?ci_sign=51dce182891106343011cf4907440aac8546a189 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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M95256-DFMN6TP pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306
M95256-DFMN6TP
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.7÷5.5V; 20MHz; SO8
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 32kx8bit
Case: SO8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
на замовлення 1315 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.63 грн
12+35.14 грн
39+23.82 грн
107+22.48 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
M95256-DFCS6TP/K pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.7÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 32kx8bit
Case: WLCSP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-DFDW6TP pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.7÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 32kx8bit
Case: TSSOP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-DFMC6TG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.7÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 32kx8bit
Case: UFDFPN8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-RDW6TP pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.8...5.5V
Memory organisation: 32kx8bit
Case: TSSOP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-RMC6TG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.8...5.5V
Memory organisation: 32kx8bit
Case: UFDFPN8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-WDW6TP pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818BB759D052C0D5&compId=m95256-df.pdf?ci_sign=a2e62ff2245873e3181b9477edcea5395b5bb306
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Operating voltage: 1.8...5.5V
Memory organisation: 32kx8bit
Case: TSSOP8
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: serial
Memory: 256kb EEPROM
Clock frequency: 20MHz
Kind of memory: EEPROM
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M95256-DRDW8TP/K en.DM00159861.pdf
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
на замовлення 43898 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+49.10 грн
Мінімальне замовлення: 4000
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STL80N10WF7
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 60A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 60A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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STH200N10WF7-2 sth200n10wf7-2.pdf
Виробник: STMicroelectronics
Category: Transistors - Unclassified
Description: STH200N10WF7-2
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+298.82 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STGD6NC60H-1 en.DM00096283.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; IPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: IPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: tube
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STGD3NB60SDT4 STGD3NB60SD.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 3A; 48W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3A
Power dissipation: 48W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 25A
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
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STGD10HF60KD en.DM00049493.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 62.5W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: ignition systems
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STGD25N40LZAG en.DM00431184.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; DPAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: DPAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGD3HF60HDT4 en.CD00277878.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4.5A
Power dissipation: 38W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGD4H60DF stgd4h60df.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGD4M65DF2 en.DM00249139.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 68W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 68W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGD7NC60HT4 stgd7nc60ht4.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 70W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 70W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
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STGB19NC60HDT4 en.CD00144165.pdf
STGB19NC60HDT4
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 130W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 978 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+270.88 грн
10+165.07 грн
11+87.25 грн
30+82.53 грн
Мінімальне замовлення: 2
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STGB50H65FB2
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 53A; 272W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 53A
Power dissipation: 272W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 151nC
Kind of package: reel; tape
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STGB10M65DF2 en.DM00157911.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6NC60HDT4 description en.CD00058424.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30H60DFB en.DM00125119.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 149nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20M65DF2 en.DM00244727.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 166W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 166W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB5H60DF en.DM00149621.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20NB41LZT4 en.CD00003294.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 200W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 200W
Case: D2PAK
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Version: ESD
Application: automotive industry; ignition systems
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STGB25N36LZAG
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 350V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 350V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 25.7nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB7NC60HDT4 en.CD00003695.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB10H60DF en.DM00092752.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB14NC60KDT4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A86DF28980D2&compId=stgb14nc60kdt4.pdf?ci_sign=a4291ed7b61f34f9cd59039d39bfacc7fbe2fd4c
STGB14NC60KDT4
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 14A
Power dissipation: 80W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15H60DF en.DM00092755.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB15M65DF2 en.DM00096991.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 136W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 136W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H60DF en.DM00066598.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 167W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 167W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB20H65FB2 stgb20h65fb2.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 147W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 147W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
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STGB20N45LZAG en.DM00242156.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 25A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry
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STGB25N40LZAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDD82FEF2D3142140D2&compId=STGB25N40LZAG.pdf?ci_sign=18a4bf6feac287217c1d5109e171aeb80464050f
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 150W; D2PAK; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped; logic level
Version: ESD
Application: automotive industry; ignition systems
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STGB30H60DLLFBAG en.DM00336135.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 260W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 260W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Application: ignition systems
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STGB30M65DF2 STGB30M65DF2.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB30V60DF pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A86DF28CE0D2&compId=stgb30v60df.pdf?ci_sign=f57730d0ce9b95d4f6a63d8dc5ea225de9ee368b
STGB30V60DF
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 258W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 258W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB3NC120HDT4 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEED9389163FE0C7&compId=STGx3NC120HD.pdf?ci_sign=28d109c69ddf7046490206a96c3a4aab61477cc0
STGB3NC120HDT4
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 7A; 75W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 7A
Power dissipation: 75W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB40V60F en.DM00086251.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 283W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 283W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
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STGB4M65DF2
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 4A; 86W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 4A
Power dissipation: 86W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 16A
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB6M65DF2 en.DM00250133.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 6A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB7H60DF en.DM00164492.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 88W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 28A
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STGB8NC60KDT4 en.CD00171973.pdf
Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8A; 65W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 65W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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M93S46-WMN6P en.CD00001175.pdf
M93S46-WMN6P
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+38.94 грн
12+33.33 грн
35+26.96 грн
95+25.47 грн
200+24.52 грн
Мінімальне замовлення: 11
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M93S46-WMN6TP pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818C42D8377800D5&compId=m93s46-w.pdf?ci_sign=8436098e87f4d03a1735a8a211094ee204cb8112
M93S46-WMN6TP
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 64x16bit; 2.5÷5.5V; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 64x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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STN83003 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1BB9DD544E469&compId=STN83003.pdf?ci_sign=9853a53cd5c2e737d37892c517ddbbac250a9354
STN83003
Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 2017 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.87 грн
13+31.99 грн
50+23.74 грн
70+13.36 грн
191+12.66 грн
Мінімальне замовлення: 8
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STEVAL-IPM05F pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8CAFA7FBA40C4&compId=STEVAL-IPM05F.pdf?ci_sign=d3b5d4c3b6e859eaebb556838a2a65452b549938
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; expansion board; Comp: STGIF5CH60TS-L; 3A
Kind of connector: Motor Control Expansion Connector; screw
Kit contents: expansion board
Output current: 3A
Interface: GPIO
Application: motors
Additional functions: speed sensor; temperature sensor
Protection: anti-overload OPP; overheating OTP
Type of development kit: evaluation
Components: STGIF5CH60TS-L
Number of add-on connectors: 1
Operating voltage: 125...400V AC
Power: 500W
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BD139 pVersion=0046&contRep=ZT&docId=E1C0472188447BF1A6F5005056AB5A8F&compId=BD139-10-STMicroelectronics.pdf?ci_sign=6a8d1aea861bc39a3676cb4f48e95f2306074693
BD139
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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LD39130SJ12R pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B997BA14BB20D2&compId=ld39130s.pdf?ci_sign=111dd427e10a70e13263765fa26384606f6cce7f
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; flip chip4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2V
Output current: 0.3A
Case: flip chip4
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1...2%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
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P0109AL 5AA4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8CBF34AF10A060D5&compId=P0109AL.pdf?ci_sign=85690e65da223ffacdb97a4aa774fea238087c92
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 1uA; SOT23-3; SMD; Ifsm: 7A
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 7A
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Load current: 0.16A
Gate current: 1µA
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P0109DA 5AL3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8CBF36D568B940D5&compId=P0109DA.pdf?ci_sign=2e5446996bb5ee4996b0ae46ecf467d41ad51e24
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 1uA; TO92; THT; tape; Ifsm: 8A
Case: TO92
Mounting: THT
Kind of package: tape
Max. forward impulse current: 8A
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 1µA
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TSB622IQ3T tsb622.pdf
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.7MHz; Ch: 2; DFN3x3; 2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.7MHz
Mounting: SMT
Number of channels: 2
Case: DFN3x3
Slew rate: 530mV/μs
Operating temperature: -40...125°C
Input offset voltage: -1...1mV
Voltage supply range: 2.7...36V DC
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 15nA
Input offset current: 3nA
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VIPER012HSTR en.DM00255197.pdf
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 240mA; 120kHz; SSOP10; boost,buck,buck-boost,flyback
Mounting: SMD
Operating temperature: -40...150°C
Output current: 240mA
Input voltage: 4.5...30V
Breakdown voltage: 800V
Frequency: 120kHz
Topology: boost; buck; buck-boost; flyback
Case: SSOP10
Type of integrated circuit: PMIC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+108.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
T635T-8FP en.DM00077120.pdf
T635T-8FP
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 35mA; Ifsm: 47A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 47A
Technology: Snubberless™
Mounting: THT
Kind of package: tube
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SM6T56AY pVersion=0046&contRep=ZT&docId=005056AB82531ED9A5CBFC6AB36D3820&compId=SM6TxxY.pdf?ci_sign=d7cb0a2306b640a208529662b96dbcd1761813a9
SM6T56AY
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56V; 7.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 47.6V
Breakdown voltage: 56V
Max. forward impulse current: 7.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 645 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.09 грн
18+21.85 грн
25+20.28 грн
100+17.92 грн
109+8.57 грн
298+8.10 грн
Мінімальне замовлення: 16
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LSM6DSOTR lsm6dso.pdf
Виробник: STMicroelectronics
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer
Type of sensor: accelerometer
на замовлення 59742 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+213.32 грн
Мінімальне замовлення: 5000
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STM32MP151AAC3 stm32mp151a.pdf
Виробник: STMicroelectronics
Category: Unclassified
Description: STM32MP151AAC3
на замовлення 945 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
189+642.50 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
M24C02-RMN6P pVersion=0046&contRep=ZT&docId=005056AB281E1EDE818B7C1A0536C0D5&compId=m24c01-r.pdf?ci_sign=51dce182891106343011cf4907440aac8546a189
M24C02-RMN6P
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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