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LDA203S LDA203S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
5+101.68 грн
6+76.16 грн
20+47.60 грн
54+45.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
LDA213S LDA213S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
4+116.20 грн
5+88.07 грн
17+55.54 грн
47+52.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DSS60-0045B DSS60-0045B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD674347A53B8BF&compId=DSS60-0045B.pdf?ci_sign=def65be7d5890f8ff83bbf40b56f0df9a8f25da4 description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Case: TO247-2
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 155W
Max. forward voltage: 0.57V
Max. off-state voltage: 45V
Load current: 60A
Max. forward impulse current: 0.6kA
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
2+299.90 грн
3+245.95 грн
5+221.35 грн
10+220.56 грн
12+208.66 грн
30+205.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA108P LAA108P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
на замовлення 537 шт:
термін постачання 21-30 дні (днів)
3+186.26 грн
5+157.88 грн
7+136.46 грн
19+128.53 грн
50+124.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LAA108PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
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PLA150S PLA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
2+280.25 грн
5+232.46 грн
12+219.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA150 PLA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
2+318.70 грн
5+230.08 грн
12+218.18 грн
50+216.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXBH42N170 IXBH42N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
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IXFA3N120 IXFA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+721.12 грн
2+477.62 грн
6+451.43 грн
В кошику  од. на суму  грн.
IXFK120N30T IXFK120N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+427.21 грн
В кошику  од. на суму  грн.
IXFK120N30P3 IXFK120N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFK120N25P IXFK120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFP270N06T3 IXFP270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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IXFA270N06T3 IXFA270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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LCC110 LCC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
2+391.32 грн
4+239.60 грн
11+226.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCC110S LCC110S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
1+471.64 грн
4+241.19 грн
11+227.70 грн
В кошику  од. на суму  грн.
LCC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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LCC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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LCC110P LCC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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MCC255-14io1 MCC255-14io1 IXYS MCC255-14io1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.4kV
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+12822.16 грн
В кошику  од. на суму  грн.
MCC255-16io1 MCC255-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99D55E8C6C820C4&compId=MCC255-16IO1.pdf?ci_sign=93ad59242ff7c1ab22df90aad5d7e28db873c9c4 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC255-18io1 MCC255-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9B9E8F0D60680C4&compId=MCC255-18io1.pdf?ci_sign=c0cb79c28dbaf2bf7900eca875739c56fa1974f9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Kind of package: bulk
Case: Y1-CU
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7.82kA
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MCC255-12io1 MCC255-12io1 IXYS MCC255-12io1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.2kV
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MCMA260PD1600YB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F1711D0700C4&compId=MCMA260PD1600YB.pdf?ci_sign=6ad821fdb3a09984a07cda7c076290735039285b pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Case: Y4-M6
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.81V
Max. forward voltage: 1.06V
Load current: 260A
Max. load current: 408A
Max. forward impulse current: 8.3kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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CPC1977J CPC1977J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B100C7&compId=CPC1977.pdf?ci_sign=8bb34dad3fc46c0ba752492770e97b8051520cb2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1.25A
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 1Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+430.62 грн
3+360.20 грн
4+287.20 грн
9+271.34 грн
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IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXBOD1-21R IXBOD1-21R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Max. load current: 0.9A
Breakover voltage: 2.1kV
Case: BOD
Type of thyristor: BOD x3
Kind of package: bulk
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+5313.59 грн
В кошику  од. на суму  грн.
IXBT16N170A IXBT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+1066.31 грн
2+859.23 грн
3+811.63 грн
В кошику  од. на суму  грн.
IXBT16N170AHV IXBT16N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1052.64 грн
2+859.23 грн
3+811.63 грн
10+780.69 грн
В кошику  од. на суму  грн.
DNA30E2200PA DNA30E2200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF00570FE87D8BF&compId=DNA30E2200PA.pdf?ci_sign=b201c089b1d3fcd918ecc29f65e04c90bb799031 Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO220AC
Power dissipation: 210W
Mounting: THT
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
2+311.86 грн
5+204.69 грн
13+192.79 грн
50+188.82 грн
100+185.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DNA30E2200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4707EF53EE0C4&compId=DNA30E2200PZ.pdf?ci_sign=15fe4b8ac3db46205a74e29bc7d07c8d2bc18514 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
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DNA30EM2200PZ-TUB DNA30EM2200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB482F0388180C4&compId=DNA30EM2200PZ.pdf?ci_sign=3857f564e83beb1af70b0ce4a3621992dc06f0fa Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
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MDNA600P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA300P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA425P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA660U2200PTEH IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
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MCNA120UI2200PED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
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FUO50-16N FUO50-16N IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA83C017CDAAE143&compId=FUO50-16N.pdf?ci_sign=6122936eac9983a4efa3876aa099ecd7a7887436 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
на замовлення 174 шт:
термін постачання 21-30 дні (днів)
1+1401.24 грн
2+1230.54 грн
5+1214.67 грн
10+1182.93 грн
В кошику  од. на суму  грн.
IXSH80N120L2KHV IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
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IXGN400N60B3 IXGN400N60B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGK400N30A3 IXGK400N30A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
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IXGN400N60A3 IXGN400N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
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MIXG240W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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IXGP30N120B3 IXGP30N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+811.69 грн
3+360.99 грн
8+341.15 грн
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IXGP42N30C3 IXYS littelfuse_discrete_igbts_pt_ixgh42n30c3_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 113ns
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LCB110 LCB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Turn-on time: 3ms
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
3+193.95 грн
7+151.54 грн
17+143.60 грн
250+142.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCB716S LCB716S IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A50E811E2158BF&compId=LCB716.pdf?ci_sign=aba403940ef2efda7ea85d724f43ac038f1cdb2c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
1+521.19 грн
4+266.58 грн
10+252.30 грн
В кошику  од. на суму  грн.
LCB717 LCB717 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86CE0C7&compId=LCB717.pdf?ci_sign=87a05df09da7b5fc5d647e258aa9681fbe313cf2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 0.3Ω
Switched voltage: max. 30V AC; max. 30V DC
Insulation voltage: 3.75kV
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Turn-on time: 2ms
Turn-off time: 5ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 1.5A
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
1+433.19 грн
3+337.98 грн
8+319.73 грн
В кошику  од. на суму  грн.
IX2127G IX2127G IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
9+47.85 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IX2127N IX2127N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
на замовлення 825 шт:
термін постачання 21-30 дні (днів)
9+51.26 грн
Мінімальне замовлення: 9
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LOC110P LOC110P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
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LOC110PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
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LOC110STR LOC110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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DSEI120-06A DSEI120-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.12V
Power dissipation: 357W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+739.92 грн
2+614.87 грн
5+581.55 грн
В кошику  од. на суму  грн.
DSEI12-12A DSEI12-12A IXYS pVersion=0046&contRep=ZT&docId=E29205785DA779F19A99005056AB752F&compId=DSEI12-12A.pdf?ci_sign=5f63879e38ba48d784c76f9195f6ab2218d4f95f Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
3+209.33 грн
8+119.01 грн
22+112.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEI12-10A DSEI12-10A IXYS Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251 description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.7V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 2.29...2.79mm
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
3+210.19 грн
5+159.47 грн
9+114.25 грн
23+108.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEI12-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4BD27DDADA0C4&compId=DSEI12-12AZ.pdf?ci_sign=5358b52cb442ba2514b9d055bb3b361c2c373018 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2X31-12B DSEI2X31-12B IXYS pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FA7F1A6F5005056AB5A8F&compId=DSEI2x31-12B.pdf?ci_sign=c9685214d0330fe8ec9daa3f55f36a38fa1e7e9e description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
1+1563.57 грн
2+1373.34 грн
В кошику  од. на суму  грн.
IXFX120N25P IXFX120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
LDA203S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC2F747AE01EC&compId=LDA203.pdf?ci_sign=e8c00693dacd4003e8fc035e9efcac42f0fb87f6
LDA203S
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+101.68 грн
6+76.16 грн
20+47.60 грн
54+45.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
LDA213S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AD204370281EC&compId=LDA213.pdf?ci_sign=6bf1f535cde47fa270dceaf89ce0b7c1d34729da
LDA213S
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
Trigger current: 1A
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+116.20 грн
5+88.07 грн
17+55.54 грн
47+52.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DSS60-0045B description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD674347A53B8BF&compId=DSS60-0045B.pdf?ci_sign=def65be7d5890f8ff83bbf40b56f0df9a8f25da4
DSS60-0045B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; TO247-2; Ufmax: 0.57V
Mounting: THT
Case: TO247-2
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Power dissipation: 155W
Max. forward voltage: 0.57V
Max. off-state voltage: 45V
Load current: 60A
Max. forward impulse current: 0.6kA
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+299.90 грн
3+245.95 грн
5+221.35 грн
10+220.56 грн
12+208.66 грн
30+205.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA108P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
LAA108P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
на замовлення 537 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+186.26 грн
5+157.88 грн
7+136.46 грн
19+128.53 грн
50+124.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LAA108PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
PLA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+280.25 грн
5+232.46 грн
12+219.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+318.70 грн
5+230.08 грн
12+218.18 грн
50+216.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXBH42N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1C570134958BF&compId=IXBH42N170_IXBT42N170.pdf?ci_sign=b7a57f2357e60d94d3088f969bde87ef72390bf7
IXBH42N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
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В кошику  од. на суму  грн.
IXFA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a
IXFA3N120
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+721.12 грн
2+477.62 грн
6+451.43 грн
В кошику  од. на суму  грн.
IXFK120N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0
IXFK120N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.21 грн
В кошику  од. на суму  грн.
IXFK120N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b
IXFK120N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFK120N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4
IXFK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFP270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFP270N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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IXFA270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFA270N06T3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
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LCC110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: THT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
на замовлення 84 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+391.32 грн
4+239.60 грн
11+226.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCC110S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4AD8C52C838BF&compId=lcc110.pdf?ci_sign=c9f5a4c15f68bc8b9d95e9201f8b42fdd258dfe1
LCC110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+471.64 грн
4+241.19 грн
11+227.70 грн
В кошику  од. на суму  грн.
LCC110PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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LCC110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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LCC110P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2693A0C7&compId=LCC110.pdf?ci_sign=731c4fd71685030f2db070e1353f1e0d19e20ac2
LCC110P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 50mA; 120mA; max.350VAC; 35Ω
Mounting: SMT
Turn-off time: 4ms
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Turn-on time: 4ms
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
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MCC255-14io1 MCC255-14io1.pdf
MCC255-14io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.4kV
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+12822.16 грн
В кошику  од. на суму  грн.
MCC255-16io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B99D55E8C6C820C4&compId=MCC255-16IO1.pdf?ci_sign=93ad59242ff7c1ab22df90aad5d7e28db873c9c4
MCC255-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 7.82kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC255-18io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B9B9E8F0D60680C4&compId=MCC255-18io1.pdf?ci_sign=c0cb79c28dbaf2bf7900eca875739c56fa1974f9
MCC255-18io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V
Kind of package: bulk
Case: Y1-CU
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.08V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7.82kA
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MCC255-12io1 MCC255-12io1.pdf
MCC255-12io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 250A; Y1; Ufmax: 1.36V
Kind of package: bulk
Case: Y1
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/220mA
Max. forward voltage: 1.36V
Load current: 250A
Max. off-state voltage: 1.2kV
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MCMA260PD1600YB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F1711D0700C4&compId=MCMA260PD1600YB.pdf?ci_sign=6ad821fdb3a09984a07cda7c076290735039285b pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Case: Y4-M6
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.81V
Max. forward voltage: 1.06V
Load current: 260A
Max. load current: 408A
Max. forward impulse current: 8.3kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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CPC1977J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49383A8B100C7&compId=CPC1977.pdf?ci_sign=8bb34dad3fc46c0ba752492770e97b8051520cb2
CPC1977J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1.25A
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 1Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+430.62 грн
3+360.20 грн
4+287.20 грн
9+271.34 грн
В кошику  од. на суму  грн.
IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXBOD1-21R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-21R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Max. load current: 0.9A
Breakover voltage: 2.1kV
Case: BOD
Type of thyristor: BOD x3
Kind of package: bulk
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5313.59 грн
В кошику  од. на суму  грн.
IXBT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33
IXBT16N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1066.31 грн
2+859.23 грн
3+811.63 грн
В кошику  од. на суму  грн.
IXBT16N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c
IXBT16N170AHV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1052.64 грн
2+859.23 грн
3+811.63 грн
10+780.69 грн
В кошику  од. на суму  грн.
DNA30E2200PA pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF00570FE87D8BF&compId=DNA30E2200PA.pdf?ci_sign=b201c089b1d3fcd918ecc29f65e04c90bb799031
DNA30E2200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 2.2kV; 30A; tube; Ifsm: 315A; TO220AC; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO220AC
Power dissipation: 210W
Mounting: THT
Semiconductor structure: single diode
Type of diode: rectifying
Kind of package: tube
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+311.86 грн
5+204.69 грн
13+192.79 грн
50+188.82 грн
100+185.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DNA30E2200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4707EF53EE0C4&compId=DNA30E2200PZ.pdf?ci_sign=15fe4b8ac3db46205a74e29bc7d07c8d2bc18514
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
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DNA30EM2200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB482F0388180C4&compId=DNA30EM2200PZ.pdf?ci_sign=3857f564e83beb1af70b0ce4a3621992dc06f0fa
DNA30EM2200PZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. off-state voltage: 2.2kV
Load current: 30A
Max. forward impulse current: 315A
Max. forward voltage: 1.24V
Case: TO263ABHV
Power dissipation: 210W
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Type of diode: rectifying
Kind of package: tube
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MDNA600P2200PTSF
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA300P2200PTSF
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA425P2200PTSF
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Case: SimBus F
Mechanical mounting: screw
Type of semiconductor module: diode
Semiconductor structure: double series
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MDNA660U2200PTEH pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBDA13A53CBB8A0C7&compId=MDNA660U2200PTEH.pdf?ci_sign=c7490321ee76c4d350619996c90c0e64c2284ada
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 2.2kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Max. forward voltage: 1.28V
Case: E3-Pack
Mechanical mounting: screw
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MCNA120UI2200PED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
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FUO50-16N pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA83C017CDAAE143&compId=FUO50-16N.pdf?ci_sign=6122936eac9983a4efa3876aa099ecd7a7887436
FUO50-16N
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
на замовлення 174 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1401.24 грн
2+1230.54 грн
5+1214.67 грн
10+1182.93 грн
В кошику  од. на суму  грн.
IXSH80N120L2KHV pVersion=0046&contRep=ZT&docId=005056AB281E1FD099C55B7758D1E0E1&compId=IXSH80N120L2KHV.pdf?ci_sign=be010a8c633b27bff592167438e90ea2234da827
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Pulsed drain current: 198A
Polarisation: unipolar
Kind of channel: enhancement
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IXGN400N60B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2F019CE41B820&compId=IXGN400N60B3.pdf?ci_sign=67c9041076c20f7cbbce35e6237791751933bdc6
IXGN400N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Pulsed collector current: 1.5kA
Max. off-state voltage: 0.6kV
Case: SOT227B
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IXGK400N30A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE928C3F5451820&compId=IXGK(X)400N30A3.pdf?ci_sign=620a1db92159c5e67eff60170c2cd1cd5ba80b7c
IXGK400N30A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Technology: GenX3™; PT
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 560nC
Turn-on time: 0.1µs
Turn-off time: 565ns
Collector current: 200A
Power dissipation: 1kW
Gate-emitter voltage: ±20V
Collector-emitter voltage: 300V
Pulsed collector current: 1.2kA
Case: TO264
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IXGN400N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2ECD2BBEEB820&compId=IXGN400N60A3.pdf?ci_sign=8a21fca6ac60404c1a68085a303adb5a72c3c627
IXGN400N60A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Semiconductor structure: single transistor
Technology: GenX3™; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Collector current: 190A
Power dissipation: 830W
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 0.6kV
Case: SOT227B
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MIXG240W1200TEH media?resourcetype=datasheets&amp;itemid=da34aa4f-918f-4eb9-8e52-be6c5ad3ffe1&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg240w1200teh%2520datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 233A
Max. off-state voltage: 1.2kV
Case: E3-Pack
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IXGP30N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAC94053C44F820&compId=IXGA(H%2CP)30N120B3.pdf?ci_sign=bccf7f842442b5dd94ada4fd3560ea2bc2b9462c
IXGP30N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+811.69 грн
3+360.99 грн
8+341.15 грн
В кошику  од. на суму  грн.
IXGP42N30C3 littelfuse_discrete_igbts_pt_ixgh42n30c3_datasheet.pdf.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 42A; 223W; TO220-3
Type of transistor: IGBT
Technology: GenX3™
Collector-emitter voltage: 300V
Collector current: 42A
Power dissipation: 223W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 113ns
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LCB110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Turn-on time: 3ms
Turn-off time: 3ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+193.95 грн
7+151.54 грн
17+143.60 грн
250+142.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCB716S pVersion=0046&contRep=ZT&docId=005056AB82531EE995A50E811E2158BF&compId=LCB716.pdf?ci_sign=aba403940ef2efda7ea85d724f43ac038f1cdb2c
LCB716S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 500mA; max.60VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 2Ω
Max. operating current: 0.5A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+521.19 грн
4+266.58 грн
10+252.30 грн
В кошику  од. на суму  грн.
LCB717 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86CE0C7&compId=LCB717.pdf?ci_sign=87a05df09da7b5fc5d647e258aa9681fbe313cf2
LCB717
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 1500mA; max.30VAC
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 0.3Ω
Switched voltage: max. 30V AC; max. 30V DC
Insulation voltage: 3.75kV
Case: DIP6
Manufacturer series: OptoMOS
Kind of output: MOSFET
Type of relay: solid state
Turn-on time: 2ms
Turn-off time: 5ms
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 1.5A
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+433.19 грн
3+337.98 грн
8+319.73 грн
В кошику  од. на суму  грн.
IX2127G pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127G
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+47.85 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IX2127N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85F670F3CC58BF&compId=IX2127.pdf?ci_sign=38a8b7c0bf9e260942cd93345172f63defde3c14
IX2127N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
на замовлення 825 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+51.26 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
LOC110P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110P
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
товару немає в наявності
В кошику  од. на суму  грн.
LOC110PTR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Case: Flatpack 8pin
товару немає в наявності
В кошику  од. на суму  грн.
LOC110STR pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110STR
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товару немає в наявності
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DSEI120-06A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD55B099A6E18BF&compId=DSEI120-06A.pdf?ci_sign=87e35c6ef00971999446e2a2eff925d1df89a02b
DSEI120-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.12V
Power dissipation: 357W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+739.92 грн
2+614.87 грн
5+581.55 грн
В кошику  од. на суму  грн.
DSEI12-12A pVersion=0046&contRep=ZT&docId=E29205785DA779F19A99005056AB752F&compId=DSEI12-12A.pdf?ci_sign=5f63879e38ba48d784c76f9195f6ab2218d4f95f
DSEI12-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 85 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+209.33 грн
8+119.01 грн
22+112.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEI12-10A description Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251
DSEI12-10A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 12A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 2.7V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
Heatsink thickness: 2.29...2.79mm
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+210.19 грн
5+159.47 грн
9+114.25 грн
23+108.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEI12-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4BD27DDADA0C4&compId=DSEI12-12AZ.pdf?ci_sign=5358b52cb442ba2514b9d055bb3b361c2c373018
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 2.2V
Max. forward impulse current: 75A
Power dissipation: 78W
Technology: FRED
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2X31-12B description pVersion=0046&contRep=ZT&docId=E1C04A8FCC4FA7F1A6F5005056AB5A8F&compId=DSEI2x31-12B.pdf?ci_sign=c9685214d0330fe8ec9daa3f55f36a38fa1e7e9e
DSEI2X31-12B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 28Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 28A x2
Case: SOT227B
Max. forward voltage: 2.55V
Max. forward impulse current: 210A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1563.57 грн
2+1373.34 грн
В кошику  од. на суму  грн.
IXFX120N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4
IXFX120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
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