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IRL630STRLPBF IRL630STRLPBF Vishay Siliconix sihl630s.pdf Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товару немає в наявності
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SQM50020EL_GE3 SQM50020EL_GE3 Vishay Siliconix sqm50020el.pdf Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+123.49 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
SQM50020EL_GE3 SQM50020EL_GE3 Vishay Siliconix sqm50020el.pdf Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1060 шт:
термін постачання 21-31 дні (днів)
2+304.78 грн
10+217.20 грн
100+153.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQM50P08-25L_GE3 SQM50P08-25L_GE3 Vishay Siliconix sqm50p08.pdf Description: MOSFET P-CHANNEL 80V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+86.71 грн
1600+77.70 грн
2400+75.81 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
SQM50P08-25L_GE3 SQM50P08-25L_GE3 Vishay Siliconix sqm50p08.pdf Description: MOSFET P-CHANNEL 80V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2664 шт:
термін постачання 21-31 дні (днів)
2+248.50 грн
10+155.83 грн
100+108.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQM50034EL_GE3 SQM50034EL_GE3 Vishay Siliconix sqm50034el.pdf Description: MOSFET N-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM50034EL_GE3 SQM50034EL_GE3 Vishay Siliconix sqm50034el.pdf Description: MOSFET N-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
2+191.35 грн
10+135.57 грн
100+93.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQM50034E_GE3 SQM50034E_GE3 Vishay Siliconix sqm50034e.pdf Description: MOSFET N-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
SQM50034E_GE3 SQM50034E_GE3 Vishay Siliconix sqm50034e.pdf Description: MOSFET N-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 355 шт:
термін постачання 21-31 дні (днів)
2+190.49 грн
10+151.91 грн
100+120.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQM50028EM_GE3 SQM50028EM_GE3 Vishay Siliconix sqm50028em.pdf Description: MOSFET N-CH 60V 120A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM50028EM_GE3 SQM50028EM_GE3 Vishay Siliconix sqm50028em.pdf Description: MOSFET N-CH 60V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
2+332.49 грн
10+210.45 грн
100+147.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQ3419EV-T1_GE3 SQ3419EV-T1_GE3 Vishay Siliconix sq3419ev.pdf Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQ3419EV-T1_GE3 SQ3419EV-T1_GE3 Vishay Siliconix sq3419ev.pdf Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5725 шт:
термін постачання 21-31 дні (днів)
7+52.82 грн
10+44.02 грн
100+30.47 грн
500+23.90 грн
1000+20.34 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF9640PBF-BE3 IRF9640PBF-BE3 Vishay Siliconix irf9640.pdf Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
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IRF540PBF-BE3 IRF540PBF-BE3 Vishay Siliconix irf540.pdf Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
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IRFBG30PBF-BE3 IRFBG30PBF-BE3 Vishay Siliconix irfbg30.pdf Description: MOSFET N-CH 1000V 3.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+264.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFRC20TRLPBF-BE3 IRFRC20TRLPBF-BE3 Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+53.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFRC20TRLPBF-BE3 IRFRC20TRLPBF-BE3 Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 4279 шт:
термін постачання 21-31 дні (днів)
3+121.22 грн
10+89.88 грн
100+66.10 грн
500+59.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFRC20TRPBF-BE3 IRFRC20TRPBF-BE3 Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+53.60 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRFRC20TRPBF-BE3 IRFRC20TRPBF-BE3 Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3925 шт:
термін постачання 21-31 дні (днів)
4+97.84 грн
10+64.95 грн
100+63.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHA2N80E-GE3 SIHA2N80E-GE3 Vishay Siliconix siha2n80e.pdf Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
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SIHA2N80E-GE3 SIHA2N80E-GE3 Vishay Siliconix siha2n80e.pdf Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
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IRFR9220TRPBF-BE3 IRFR9220TRPBF-BE3 Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+70.42 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRFR9220TRPBF-BE3 IRFR9220TRPBF-BE3 Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 3132 шт:
термін постачання 21-31 дні (днів)
4+105.63 грн
10+82.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFB11N50APBF-BE3 IRFB11N50APBF-BE3 Vishay Siliconix 91094.pdf Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
на замовлення 1630 шт:
термін постачання 21-31 дні (днів)
2+272.74 грн
50+132.55 грн
100+120.01 грн
500+91.98 грн
1000+85.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI7326DN-T1-GE3 SI7326DN-T1-GE3 Vishay Siliconix si7326dn.pdf Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
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SI7326DN-T1-GE3 SI7326DN-T1-GE3 Vishay Siliconix si7326dn.pdf Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
на замовлення 1790 шт:
термін постачання 21-31 дні (днів)
5+69.27 грн
10+58.11 грн
100+40.25 грн
500+31.55 грн
1000+26.86 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SI7326DN-T1-E3 SI7326DN-T1-E3 Vishay Siliconix si7326dn.pdf Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
товару немає в наявності
В кошику  од. на суму  грн.
SI7326DN-T1-E3 SI7326DN-T1-E3 Vishay Siliconix si7326dn.pdf Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
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SIC651CD-T1-GE3 SIC651CD-T1-GE3 Vishay Siliconix sic651.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
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В кошику  од. на суму  грн.
SIC651CD-T1-GE3 SIC651CD-T1-GE3 Vishay Siliconix sic651.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 2983 шт:
термін постачання 21-31 дні (днів)
2+180.96 грн
10+129.82 грн
25+118.60 грн
100+99.69 грн
250+94.16 грн
500+90.83 грн
1000+86.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIC652ACD-T1-GE3 SIC652ACD-T1-GE3 Vishay Siliconix sic652.pdf Description: IC HALF BRIDGE DRIVER 55A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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В кошику  од. на суму  грн.
SIC652ACD-T1-GE3 SIC652ACD-T1-GE3 Vishay Siliconix sic652.pdf Description: IC HALF BRIDGE DRIVER 55A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)
2+314.30 грн
10+199.36 грн
25+172.49 грн
100+133.56 грн
250+119.81 грн
500+111.42 грн
1000+102.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIC641ACD-T1-GE3 SIC641ACD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 55A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 16V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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В кошику  од. на суму  грн.
SIC641ACD-T1-GE3 SIC641ACD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 55A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 16V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
товару немає в наявності
В кошику  од. на суму  грн.
SI4943CDY-T1-E3 SI4943CDY-T1-E3 Vishay Siliconix si4943cdy.pdf Description: MOSFET 2P-CH 20V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4943CDY-T1-E3 SI4943CDY-T1-E3 Vishay Siliconix si4943cdy.pdf Description: MOSFET 2P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 1348 шт:
термін постачання 21-31 дні (днів)
2+180.10 грн
10+111.89 грн
100+76.38 грн
500+57.43 грн
1000+56.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIP2804DY-T1-E3 SIP2804DY-T1-E3 Vishay Siliconix Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 49%
Frequency - Switching: 46kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.3V ~ 12V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Active
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SIP2804DY-T1-E3 SIP2804DY-T1-E3 Vishay Siliconix Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 49%
Frequency - Switching: 46kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.3V ~ 12V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Active
на замовлення 1441 шт:
термін постачання 21-31 дні (днів)
3+148.93 грн
10+129.15 грн
25+121.83 грн
100+97.40 грн
250+91.46 грн
500+80.02 грн
1000+65.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG2723DN-T1-E4 DG2723DN-T1-E4 Vishay Siliconix tf-dg2723dn-t1-e4.pdf Description: IC SWITCH SPDTX2 8OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 4.3V
Charge Injection: 3pC
Crosstalk: -36dB @ 240MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 800mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+57.46 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DG2723DN-T1-E4 DG2723DN-T1-E4 Vishay Siliconix tf-dg2723dn-t1-e4.pdf Description: IC SWITCH SPDTX2 8OHM 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 4.3V
Charge Injection: 3pC
Crosstalk: -36dB @ 240MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 800mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
на замовлення 4948 шт:
термін постачання 21-31 дні (днів)
3+117.76 грн
10+82.21 грн
25+74.57 грн
100+62.11 грн
250+58.35 грн
500+56.09 грн
1000+53.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG2730DN-T1-GE4 DG2730DN-T1-GE4 Vishay Siliconix dg2730.pdf Description: IC SWITCH DPDTX1 8OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 900MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 4.3V
Charge Injection: 0.5pC
Crosstalk: -45dB @ 240MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 800mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 2.2pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+53.53 грн
6000+50.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DG2730DN-T1-GE4 DG2730DN-T1-GE4 Vishay Siliconix dg2730.pdf Description: IC SWITCH DPDTX1 8OHM 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 900MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 4.3V
Charge Injection: 0.5pC
Crosstalk: -45dB @ 240MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 800mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 2.2pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 6084 шт:
термін постачання 21-31 дні (днів)
4+109.10 грн
10+76.62 грн
25+69.47 грн
100+57.86 грн
250+54.36 грн
500+53.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFBC20PBF-BE3 IRFBC20PBF-BE3 Vishay Siliconix irfbc20.pdf Description: MOSFET N-CH 600V 2.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 962 шт:
термін постачання 21-31 дні (днів)
3+120.35 грн
50+55.01 грн
100+49.06 грн
500+36.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIR626ADP-T1-RE3 SIR626ADP-T1-RE3 Vishay Siliconix sir626adp.pdf Description: MOSFET N-CH 60V 40.4A/165A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.4A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 30 V
на замовлення 16383 шт:
термін постачання 21-31 дні (днів)
2+232.05 грн
10+144.33 грн
100+99.31 грн
500+75.15 грн
1000+69.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+85.72 грн
6000+79.44 грн
9000+76.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101
на замовлення 24798 шт:
термін постачання 21-31 дні (днів)
2+190.49 грн
10+152.08 грн
100+121.02 грн
500+96.10 грн
1000+81.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJ412EP-T2_GE3 Vishay Siliconix SQJ412EP.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SIC931BED-Y1-GE3 SIC931BED-Y1-GE3 Vishay Siliconix sic931.pdf Description: IC REG BUCK ADJ 20A POWERPAK
Packaging: Tray
Package / Case: 60-PowerBFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1MHz, 1.5MHz, 2MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: PowerPAK® MLP60-A6C
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
1+1482.33 грн
10+1258.09 грн
25+1156.12 грн
210+1021.13 грн
В кошику  од. на суму  грн.
SI7223DN-T1-GE3 SI7223DN-T1-GE3 Vishay Siliconix si7223dn.pdf Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+30.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7223DN-T1-GE3 SI7223DN-T1-GE3 Vishay Siliconix si7223dn.pdf Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
на замовлення 3978 шт:
термін постачання 21-31 дні (днів)
3+116.02 грн
10+69.54 грн
100+46.84 грн
500+34.43 грн
1000+30.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFL110TRPBF-BE3 IRFL110TRPBF-BE3 Vishay Siliconix sihfl110.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+46.59 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFL110TRPBF-BE3 IRFL110TRPBF-BE3 Vishay Siliconix sihfl110.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
на замовлення 2914 шт:
термін постачання 21-31 дні (днів)
3+161.91 грн
10+99.80 грн
100+67.75 грн
500+50.72 грн
1000+48.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFL9014TRPBF-BE3 IRFL9014TRPBF-BE3 Vishay Siliconix sihfl901.pdf Description: MOSFET P-CH 60V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+64.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFL9014TRPBF-BE3 IRFL9014TRPBF-BE3 Vishay Siliconix sihfl901.pdf Description: MOSFET P-CH 60V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2713 шт:
термін постачання 21-31 дні (днів)
2+213.00 грн
10+132.90 грн
100+91.62 грн
500+71.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SUP85N03-3M6P-GE3 SUP85N03-3M6P-GE3 Vishay Siliconix sup85n03.pdf Description: MOSFET N-CH 30V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3535 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SIC641CD-T1-GE3 SIC641CD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 55A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 16V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+101.23 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIC641CD-T1-GE3 SIC641CD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 55A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 16V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 3022 шт:
термін постачання 21-31 дні (днів)
2+211.27 грн
10+152.16 грн
25+139.27 грн
100+117.39 грн
250+111.05 грн
500+107.23 грн
1000+102.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG4157EDL-T1-GE3 DG4157EDL-T1-GE3 Vishay Siliconix dg4157e.pdf Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 152MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: -5pC
Crosstalk: -41dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Current - Leakage (IS(off)) (Max): 3nA
Part Status: Active
Number of Circuits: 1
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
3000+18.15 грн
6000+17.01 грн
9000+16.78 грн
15000+15.51 грн
21000+15.37 грн
30000+15.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DG4157EDL-T1-GE3 DG4157EDL-T1-GE3 Vishay Siliconix dg4157e.pdf Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 152MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: -5pC
Crosstalk: -41dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Current - Leakage (IS(off)) (Max): 3nA
Part Status: Active
Number of Circuits: 1
на замовлення 45099 шт:
термін постачання 21-31 дні (днів)
9+40.69 грн
13+27.68 грн
25+24.85 грн
100+20.29 грн
250+18.86 грн
500+17.99 грн
1000+17.00 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRL630STRLPBF sihl630s.pdf
IRL630STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товару немає в наявності
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SQM50020EL_GE3 sqm50020el.pdf
SQM50020EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+123.49 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
SQM50020EL_GE3 sqm50020el.pdf
SQM50020EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1060 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.78 грн
10+217.20 грн
100+153.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQM50P08-25L_GE3 sqm50p08.pdf
SQM50P08-25L_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 80V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+86.71 грн
1600+77.70 грн
2400+75.81 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
SQM50P08-25L_GE3 sqm50p08.pdf
SQM50P08-25L_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 80V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2664 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+248.50 грн
10+155.83 грн
100+108.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQM50034EL_GE3 sqm50034el.pdf
SQM50034EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQM50034EL_GE3 sqm50034el.pdf
SQM50034EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.35 грн
10+135.57 грн
100+93.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQM50034E_GE3 sqm50034e.pdf
SQM50034E_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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SQM50034E_GE3 sqm50034e.pdf
SQM50034E_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 355 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.49 грн
10+151.91 грн
100+120.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQM50028EM_GE3 sqm50028em.pdf
SQM50028EM_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQM50028EM_GE3 sqm50028em.pdf
SQM50028EM_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+332.49 грн
10+210.45 грн
100+147.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQ3419EV-T1_GE3 sq3419ev.pdf
SQ3419EV-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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SQ3419EV-T1_GE3 sq3419ev.pdf
SQ3419EV-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+52.82 грн
10+44.02 грн
100+30.47 грн
500+23.90 грн
1000+20.34 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF9640PBF-BE3 irf9640.pdf
IRF9640PBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
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IRF540PBF-BE3 irf540.pdf
IRF540PBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
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IRFBG30PBF-BE3 irfbg30.pdf
IRFBG30PBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+264.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFRC20TRLPBF-BE3 sihfrc20.pdf
IRFRC20TRLPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+53.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFRC20TRLPBF-BE3 sihfrc20.pdf
IRFRC20TRLPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 4279 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.22 грн
10+89.88 грн
100+66.10 грн
500+59.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFRC20TRPBF-BE3 sihfrc20.pdf
IRFRC20TRPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+53.60 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRFRC20TRPBF-BE3 sihfrc20.pdf
IRFRC20TRPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3925 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.84 грн
10+64.95 грн
100+63.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIHA2N80E-GE3 siha2n80e.pdf
SIHA2N80E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
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SIHA2N80E-GE3 siha2n80e.pdf
SIHA2N80E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
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IRFR9220TRPBF-BE3 sihfr922.pdf
IRFR9220TRPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+70.42 грн
Мінімальне замовлення: 2000
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IRFR9220TRPBF-BE3 sihfr922.pdf
IRFR9220TRPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
на замовлення 3132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.63 грн
10+82.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFB11N50APBF-BE3 91094.pdf
IRFB11N50APBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
на замовлення 1630 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+272.74 грн
50+132.55 грн
100+120.01 грн
500+91.98 грн
1000+85.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI7326DN-T1-GE3 si7326dn.pdf
SI7326DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
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SI7326DN-T1-GE3 si7326dn.pdf
SI7326DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
на замовлення 1790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.27 грн
10+58.11 грн
100+40.25 грн
500+31.55 грн
1000+26.86 грн
Мінімальне замовлення: 5
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SI7326DN-T1-E3 si7326dn.pdf
SI7326DN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
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SI7326DN-T1-E3 si7326dn.pdf
SI7326DN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
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SIC651CD-T1-GE3 sic651.pdf
SIC651CD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
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SIC651CD-T1-GE3 sic651.pdf
SIC651CD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 2983 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+180.96 грн
10+129.82 грн
25+118.60 грн
100+99.69 грн
250+94.16 грн
500+90.83 грн
1000+86.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIC652ACD-T1-GE3 sic652.pdf
SIC652ACD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 55A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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SIC652ACD-T1-GE3 sic652.pdf
SIC652ACD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 55A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+314.30 грн
10+199.36 грн
25+172.49 грн
100+133.56 грн
250+119.81 грн
500+111.42 грн
1000+102.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIC641ACD-T1-GE3
SIC641ACD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 55A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 16V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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SIC641ACD-T1-GE3
SIC641ACD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 55A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 16V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
товару немає в наявності
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SI4943CDY-T1-E3 si4943cdy.pdf
SI4943CDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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SI4943CDY-T1-E3 si4943cdy.pdf
SI4943CDY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 1348 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+180.10 грн
10+111.89 грн
100+76.38 грн
500+57.43 грн
1000+56.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIP2804DY-T1-E3
SIP2804DY-T1-E3
Виробник: Vishay Siliconix
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 49%
Frequency - Switching: 46kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.3V ~ 12V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Active
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SIP2804DY-T1-E3
SIP2804DY-T1-E3
Виробник: Vishay Siliconix
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 49%
Frequency - Switching: 46kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.3V ~ 12V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Active
на замовлення 1441 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.93 грн
10+129.15 грн
25+121.83 грн
100+97.40 грн
250+91.46 грн
500+80.02 грн
1000+65.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG2723DN-T1-E4 tf-dg2723dn-t1-e4.pdf
DG2723DN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH SPDTX2 8OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 4.3V
Charge Injection: 3pC
Crosstalk: -36dB @ 240MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 800mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+57.46 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DG2723DN-T1-E4 tf-dg2723dn-t1-e4.pdf
DG2723DN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH SPDTX2 8OHM 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 700MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 4.3V
Charge Injection: 3pC
Crosstalk: -36dB @ 240MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 800mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
на замовлення 4948 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.76 грн
10+82.21 грн
25+74.57 грн
100+62.11 грн
250+58.35 грн
500+56.09 грн
1000+53.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG2730DN-T1-GE4 dg2730.pdf
DG2730DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH DPDTX1 8OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 900MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 4.3V
Charge Injection: 0.5pC
Crosstalk: -45dB @ 240MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 800mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 2.2pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+53.53 грн
6000+50.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DG2730DN-T1-GE4 dg2730.pdf
DG2730DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH DPDTX1 8OHM 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 900MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 4.3V
Charge Injection: 0.5pC
Crosstalk: -45dB @ 240MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 800mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 2.2pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 6084 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.10 грн
10+76.62 грн
25+69.47 грн
100+57.86 грн
250+54.36 грн
500+53.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFBC20PBF-BE3 irfbc20.pdf
IRFBC20PBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 962 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.35 грн
50+55.01 грн
100+49.06 грн
500+36.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIR626ADP-T1-RE3 sir626adp.pdf
SIR626ADP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 40.4A/165A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.4A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 30 V
на замовлення 16383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.05 грн
10+144.33 грн
100+99.31 грн
500+75.15 грн
1000+69.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJ412EP-T1_GE3 sqj412ep.pdf
SQJ412EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+85.72 грн
6000+79.44 грн
9000+76.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ412EP-T1_GE3 sqj412ep.pdf
SQJ412EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101
на замовлення 24798 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.49 грн
10+152.08 грн
100+121.02 грн
500+96.10 грн
1000+81.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJ412EP-T2_GE3 SQJ412EP.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10.3A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SIC931BED-Y1-GE3 sic931.pdf
SIC931BED-Y1-GE3
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 20A POWERPAK
Packaging: Tray
Package / Case: 60-PowerBFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1MHz, 1.5MHz, 2MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: PowerPAK® MLP60-A6C
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1482.33 грн
10+1258.09 грн
25+1156.12 грн
210+1021.13 грн
В кошику  од. на суму  грн.
SI7223DN-T1-GE3 si7223dn.pdf
SI7223DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+30.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI7223DN-T1-GE3 si7223dn.pdf
SI7223DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
на замовлення 3978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.02 грн
10+69.54 грн
100+46.84 грн
500+34.43 грн
1000+30.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFL110TRPBF-BE3 sihfl110.pdf
IRFL110TRPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+46.59 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFL110TRPBF-BE3 sihfl110.pdf
IRFL110TRPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
на замовлення 2914 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+161.91 грн
10+99.80 грн
100+67.75 грн
500+50.72 грн
1000+48.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFL9014TRPBF-BE3 sihfl901.pdf
IRFL9014TRPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+64.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFL9014TRPBF-BE3 sihfl901.pdf
IRFL9014TRPBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 2713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+213.00 грн
10+132.90 грн
100+91.62 грн
500+71.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SUP85N03-3M6P-GE3 sup85n03.pdf
SUP85N03-3M6P-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3535 pF @ 15 V
товару немає в наявності
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SIC641CD-T1-GE3
SIC641CD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 55A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 16V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+101.23 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIC641CD-T1-GE3
SIC641CD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 55A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 16V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 3022 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+211.27 грн
10+152.16 грн
25+139.27 грн
100+117.39 грн
250+111.05 грн
500+107.23 грн
1000+102.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG4157EDL-T1-GE3 dg4157e.pdf
DG4157EDL-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 152MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: -5pC
Crosstalk: -41dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Current - Leakage (IS(off)) (Max): 3nA
Part Status: Active
Number of Circuits: 1
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.15 грн
6000+17.01 грн
9000+16.78 грн
15000+15.51 грн
21000+15.37 грн
30000+15.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DG4157EDL-T1-GE3 dg4157e.pdf
DG4157EDL-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 152MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: -5pC
Crosstalk: -41dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Current - Leakage (IS(off)) (Max): 3nA
Part Status: Active
Number of Circuits: 1
на замовлення 45099 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+40.69 грн
13+27.68 грн
25+24.85 грн
100+20.29 грн
250+18.86 грн
500+17.99 грн
1000+17.00 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
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