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DG309DY-T1-E3 DG309DY-T1-E3 Vishay Siliconix dg308a.pdf Description: IC SWITCH SPST-NCX4 85OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4V ~ 44V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
на замовлення 2035 шт:
термін постачання 21-31 дні (днів)
2+206.07 грн
10+147.66 грн
25+134.97 грн
100+113.56 грн
250+107.32 грн
500+103.56 грн
1000+98.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG333ALDW-T1-E3 DG333ALDW-T1-E3 Vishay Siliconix dg333a.pdf Description: IC SWITCH SPDT X 4 45OHM 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 20-SOIC
Voltage - Supply, Single (V+): 5V ~ 40V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Charge Injection: 10pC
Crosstalk: -80dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 2923 шт:
термін постачання 21-31 дні (днів)
1+433.79 грн
10+319.67 грн
25+295.29 грн
100+251.99 грн
250+240.01 грн
500+232.79 грн
В кошику  од. на суму  грн.
DG403BDY-T1-E3 DG403BDY-T1-E3 Vishay Siliconix 742_73069-240305.pdf Description: IC SW SPST-NO/NCX4 45OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
на замовлення 4939 шт:
термін постачання 21-31 дні (днів)
2+324.69 грн
10+236.88 грн
25+217.95 грн
100+185.05 грн
250+175.76 грн
500+170.16 грн
1000+162.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG4052EEN-T1-GE4 DG4052EEN-T1-GE4 Vishay Siliconix dg4051e.pdf Description: IC SWITCH SP4TX2 78OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 19226 шт:
термін постачання 21-31 дні (днів)
4+109.96 грн
10+76.96 грн
25+69.84 грн
100+58.16 грн
250+54.64 грн
500+52.52 грн
1000+49.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DG406BDW-T1-E3 DG406BDW-T1-E3 Vishay Siliconix dg406b.pdf Description: IC MUX 16:1 60OHM 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 11pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
товару немає в наявності
В кошику  од. на суму  грн.
DG408LEDN-T1-GE4 DG408LEDN-T1-GE4 Vishay Siliconix dg408le.pdf Description: IC MUX 8:1 23OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 5301 шт:
термін постачання 21-31 дні (днів)
3+128.15 грн
10+90.88 грн
25+82.64 грн
100+69.06 грн
250+65.01 грн
500+62.56 грн
1000+59.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG417BDY-T1-E3 DG417BDY-T1-E3 Vishay Siliconix dg417b.pdf Description: IC SWITCH SPST-NCX1 25OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+227.72 грн
10+163.59 грн
25+149.75 грн
100+126.24 грн
250+119.41 грн
500+115.30 грн
1000+110.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG418BDQ-T1-E3 DG418BDQ-T1-E3 Vishay Siliconix dg417b.pdf Description: IC SWITCH SPST-NOX1 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+245.90 грн
10+177.34 грн
25+162.39 грн
100+137.01 грн
250+129.66 грн
500+125.24 грн
1000+119.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG442BDN-T1-E4 DG442BDN-T1-E4 Vishay Siliconix 72625.pdf Description: IC SWITCH SPST-NOX4 80OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 80Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
на замовлення 5568 шт:
термін постачання 21-31 дні (днів)
2+271.88 грн
10+197.52 грн
25+181.36 грн
100+153.54 грн
250+145.59 грн
500+140.79 грн
1000+134.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG442BDY-T1-E3 DG442BDY-T1-E3 Vishay Siliconix 72625.pdf Description: IC SWITCH QUAD SPST 16SOIC
на замовлення 2428 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
DG507BEN-T1-GE3 DG507BEN-T1-GE3 Vishay Siliconix dg506b.pdf Description: IC MUX DUAL 8:1 300OHM 28PLCC
Packaging: Cut Tape (CT)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 300Ohm
-3db Bandwidth: 217MHz
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 1pC
Crosstalk: -84dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+408.68 грн
10+353.27 грн
В кошику  од. на суму  грн.
IRF630STRRPBF IRF630STRRPBF Vishay Siliconix sih630s.pdf Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
2+177.50 грн
10+110.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF644STRLPBF IRF644STRLPBF Vishay Siliconix sihf644s.pdf Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
1+351.53 грн
10+224.20 грн
100+159.14 грн
В кошику  од. на суму  грн.
IRF710STRLPBF IRF710STRLPBF Vishay Siliconix sihf710s.pdf Description: MOSFET N-CH 400V 2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF730ASTRLPBF IRF730ASTRLPBF Vishay Siliconix sihf730a.pdf Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF730STRLPBF IRF730STRLPBF Vishay Siliconix sihf730s.pdf Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 663 шт:
термін постачання 21-31 дні (днів)
2+232.91 грн
10+145.33 грн
100+100.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF820STRLPBF IRF820STRLPBF Vishay Siliconix sihf820s.pdf Description: MOSFET N-CH 500V 2.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
товару немає в наявності
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IRFBC30ASTRLPBF IRFBC30ASTRLPBF Vishay Siliconix doc?98239 Description: MOSFET N-CH 600V 3.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товару немає в наявності
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IRFBC40ASTRLPBF IRFBC40ASTRLPBF Vishay Siliconix sihfbc40.pdf Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+392.23 грн
10+251.30 грн
100+179.81 грн
В кошику  од. на суму  грн.
IRFBE30STRLPBF IRFBE30STRLPBF Vishay Siliconix doc?98731 Description: MOSFET N-CH 800V 4.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
2+339.41 грн
10+215.87 грн
100+152.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFBF30STRLPBF IRFBF30STRLPBF Vishay Siliconix sihbf30s.pdf Description: MOSFET N-CH 900V 3.6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 1389 шт:
термін постачання 21-31 дні (днів)
2+339.41 грн
10+216.12 грн
100+153.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR014TRLPBF IRFR014TRLPBF Vishay Siliconix sihfr014.pdf Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
на замовлення 2620 шт:
термін постачання 21-31 дні (днів)
4+109.10 грн
10+72.21 грн
100+51.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFR024TRLPBF IRFR024TRLPBF Vishay Siliconix sihfr024.pdf Description: MOSFET N-CH 60V 14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
2+176.63 грн
10+109.39 грн
100+74.64 грн
500+56.10 грн
1000+55.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR1N60ATRLPBF IRFR1N60ATRLPBF Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR210TRRPBF IRFR210TRRPBF Vishay Siliconix sihfr210.pdf Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR214TRLPBF IRFR214TRLPBF Vishay Siliconix sihfr214.pdf Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR220TRRPBF IRFR220TRRPBF Vishay Siliconix sihfr220.pdf Description: MOSFET N-CH 200V 4.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)
3+158.45 грн
10+97.47 грн
100+66.02 грн
500+49.33 грн
1000+46.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR9010TRLPBF IRFR9010TRLPBF Vishay Siliconix sihfr901.pdf Description: MOSFET P-CH 50V 5.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR9214TRLPBF IRFR9214TRLPBF Vishay Siliconix sihfr921.pdf Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
на замовлення 2620 шт:
термін постачання 21-31 дні (днів)
2+187.89 грн
10+116.15 грн
100+79.00 грн
500+59.22 грн
1000+54.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS11N50ATRLP IRFS11N50ATRLP Vishay Siliconix 91286.pdf Description: MOSFET N-CH 500V 11A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
2+288.33 грн
10+182.26 грн
100+127.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS11N50ATRRP IRFS11N50ATRRP Vishay Siliconix 91286.pdf Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRL510STRLPBF IRL510STRLPBF Vishay Siliconix sihf510s.pdf Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
3+122.95 грн
10+82.63 грн
100+60.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL620STRLPBF IRL620STRLPBF Vishay Siliconix sihl620s.pdf Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLZ14STRLPBF IRLZ14STRLPBF Vishay Siliconix sihlz14s.pdf Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 2233 шт:
термін постачання 21-31 дні (днів)
3+159.32 грн
10+98.05 грн
100+66.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4421DY-T1-GE3 SI4421DY-T1-GE3 Vishay Siliconix si4421dy.pdf Description: MOSFET P-CH 20V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
на замовлення 13609 шт:
термін постачання 21-31 дні (днів)
2+264.08 грн
10+165.34 грн
100+114.72 грн
500+87.34 грн
1000+80.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI4634DY-T1-E3 SI4634DY-T1-E3 Vishay Siliconix si4634dy.pdf Description: MOSFET N-CH 30V 24.5A 8SO
на замовлення 4985 шт:
термін постачання 21-31 дні (днів)
3+150.66 грн
10+129.99 грн
100+104.47 грн
500+80.55 грн
1000+66.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI5441BDC-T1-GE3 SI5441BDC-T1-GE3 Vishay Siliconix si5441bd.pdf Description: MOSFET P-CH 20V 4.4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
товару немає в наявності
В кошику  од. на суму  грн.
SI8819EDB-T2-E1 Vishay Siliconix si8819edb.pdf Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
8+45.89 грн
13+27.43 грн
100+17.43 грн
500+12.32 грн
1000+11.02 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SIA413ADJ-T1-GE3 SIA413ADJ-T1-GE3 Vishay Siliconix sia413adj.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
3+119.49 грн
10+72.54 грн
100+48.17 грн
500+35.38 грн
1000+32.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SiA445EDJT-T1-GE3 SiA445EDJT-T1-GE3 Vishay Siliconix sia445edjt.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
10+37.23 грн
11+30.60 грн
100+21.30 грн
500+15.61 грн
1000+12.69 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SIC779ACD-T1-GE3 SIC779ACD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 35A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 35A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
2+200.01 грн
10+173.34 грн
25+163.59 грн
100+130.77 грн
250+122.79 грн
500+107.45 грн
1000+87.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHB23N60E-GE3 SIHB23N60E-GE3 Vishay Siliconix sihb23n60e.pdf Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
на замовлення 1086 шт:
термін постачання 21-31 дні (днів)
1+356.73 грн
50+178.20 грн
100+162.16 грн
500+125.84 грн
1000+117.38 грн
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SIHB33N60ET1-GE3 SIHB33N60ET1-GE3 Vishay Siliconix sihb33n60e.pdf Description: MOSFET N-CH 600V 33A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
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SIHD5N50D-E3 SIHD5N50D-E3 Vishay Siliconix sihd5n50d.pdf Description: MOSFET N-CH 500V 5.3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
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SIHF12N50C-E3 SIHF12N50C-E3 Vishay Siliconix sihp12n5.pdf Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
1+446.78 грн
50+227.15 грн
100+207.60 грн
500+162.69 грн
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SiHF7N60E-GE3 SiHF7N60E-GE3 Vishay Siliconix sihf7n60e.pdf Description: MOSFET N-CHANNEL 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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SIHP16N50C-E3 SIHP16N50C-E3 Vishay Siliconix sihp16n5.pdf Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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SiHP23N60E-GE3 SiHP23N60E-GE3 Vishay Siliconix sihp23n60e.pdf Description: MOSFET N-CH 600V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
на замовлення 803 шт:
термін постачання 21-31 дні (днів)
2+309.11 грн
50+152.38 грн
100+138.29 грн
500+106.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHP25N40D-E3 SIHP25N40D-E3 Vishay Siliconix sihp25n40d.pdf Description: MOSFET N-CH 400V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
2+260.62 грн
50+137.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHU6N62E-GE3 SIHU6N62E-GE3 Vishay Siliconix sihu6n62e.pdf Description: MOSFET N-CH 620V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
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SIR158DP-T1-RE3 SIR158DP-T1-RE3 Vishay Siliconix sir158dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
2+185.29 грн
10+114.73 грн
100+78.48 грн
500+59.10 грн
Мінімальне замовлення: 2
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SIR870ADP-T1-RE3 SIR870ADP-T1-RE3 Vishay Siliconix sir870adp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
на замовлення 2568 шт:
термін постачання 21-31 дні (днів)
2+192.22 грн
10+137.91 грн
100+95.96 грн
500+75.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIRA90DP-T1-RE3 SIRA90DP-T1-RE3 Vishay Siliconix sira90dp.pdf Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
на замовлення 7764 шт:
термін постачання 21-31 дні (днів)
3+146.33 грн
10+97.30 грн
100+76.12 грн
500+57.06 грн
1000+52.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIZ988DT-T1-GE3 SIZ988DT-T1-GE3 Vishay Siliconix siz988dt.pdf Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
на замовлення 10248 шт:
термін постачання 21-31 дні (днів)
4+110.83 грн
10+95.55 грн
100+74.51 грн
500+57.76 грн
1000+45.60 грн
Мінімальне замовлення: 4
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SQ4532AEY-T1_GE3 SQ4532AEY-T1_GE3 Vishay Siliconix sq4532aey.pdf Description: MOSFET N/P-CH 30V 7.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)
6+63.21 грн
10+43.77 грн
25+39.35 грн
100+32.37 грн
250+30.20 грн
500+28.89 грн
1000+27.36 грн
Мінімальне замовлення: 6
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SQD100N03-3M2L_GE3 SQD100N03-3M2L_GE3 Vishay Siliconix sqd100n03-3m2l.pdf Description: MOSFET N-CH 30V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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SQD100N03-3M4_GE3 SQD100N03-3M4_GE3 Vishay Siliconix sqd100n03-3m4.pdf Description: MOSFET N-CH 30V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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SQD19P06-60L_T4GE3 SQD19P06-60L_T4GE3 Vishay Siliconix sqd19p06.pdf Description: MOSFET P-CH 60V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5345 шт:
термін постачання 21-31 дні (днів)
2+176.63 грн
10+108.47 грн
100+73.67 грн
500+55.13 грн
1000+50.62 грн
Мінімальне замовлення: 2
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SQD25N06-22L_T4GE3 SQD25N06-22L_T4GE3 Vishay Siliconix sqd25n06-22l.pdf Description: MOSFET N-CH 60V 25A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQD30N05-20L_GE3 SQD30N05-20L_GE3 Vishay Siliconix sqd30n05-20l.pdf Description: MOSFET N-CH 55V 30A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3235 шт:
термін постачання 21-31 дні (днів)
3+133.34 грн
10+98.55 грн
100+67.55 грн
500+50.55 грн
1000+48.49 грн
Мінімальне замовлення: 3
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DG309DY-T1-E3 dg308a.pdf
DG309DY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 85OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4V ~ 44V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
на замовлення 2035 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.07 грн
10+147.66 грн
25+134.97 грн
100+113.56 грн
250+107.32 грн
500+103.56 грн
1000+98.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG333ALDW-T1-E3 dg333a.pdf
DG333ALDW-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 4 45OHM 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 20-SOIC
Voltage - Supply, Single (V+): 5V ~ 40V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Charge Injection: 10pC
Crosstalk: -80dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
на замовлення 2923 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+433.79 грн
10+319.67 грн
25+295.29 грн
100+251.99 грн
250+240.01 грн
500+232.79 грн
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DG403BDY-T1-E3 742_73069-240305.pdf
DG403BDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 45OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
на замовлення 4939 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+324.69 грн
10+236.88 грн
25+217.95 грн
100+185.05 грн
250+175.76 грн
500+170.16 грн
1000+162.83 грн
Мінімальне замовлення: 2
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DG4052EEN-T1-GE4 dg4051e.pdf
DG4052EEN-T1-GE4
Виробник: Vishay Siliconix
Description: IC SWITCH SP4TX2 78OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 19226 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.96 грн
10+76.96 грн
25+69.84 грн
100+58.16 грн
250+54.64 грн
500+52.52 грн
1000+49.95 грн
Мінімальне замовлення: 4
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DG406BDW-T1-E3 dg406b.pdf
DG406BDW-T1-E3
Виробник: Vishay Siliconix
Description: IC MUX 16:1 60OHM 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 11pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
товару немає в наявності
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DG408LEDN-T1-GE4 dg408le.pdf
DG408LEDN-T1-GE4
Виробник: Vishay Siliconix
Description: IC MUX 8:1 23OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
на замовлення 5301 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+128.15 грн
10+90.88 грн
25+82.64 грн
100+69.06 грн
250+65.01 грн
500+62.56 грн
1000+59.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DG417BDY-T1-E3 dg417b.pdf
DG417BDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX1 25OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+227.72 грн
10+163.59 грн
25+149.75 грн
100+126.24 грн
250+119.41 грн
500+115.30 грн
1000+110.09 грн
Мінімальне замовлення: 2
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DG418BDQ-T1-E3 dg417b.pdf
DG418BDQ-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX1 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+245.90 грн
10+177.34 грн
25+162.39 грн
100+137.01 грн
250+129.66 грн
500+125.24 грн
1000+119.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DG442BDN-T1-E4 72625.pdf
DG442BDN-T1-E4
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 80OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 80Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: -1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 220ns, 120ns
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
на замовлення 5568 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+271.88 грн
10+197.52 грн
25+181.36 грн
100+153.54 грн
250+145.59 грн
500+140.79 грн
1000+134.61 грн
Мінімальне замовлення: 2
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DG442BDY-T1-E3 72625.pdf
DG442BDY-T1-E3
Виробник: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
на замовлення 2428 шт:
термін постачання 21-31 дні (днів)
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DG507BEN-T1-GE3 dg506b.pdf
DG507BEN-T1-GE3
Виробник: Vishay Siliconix
Description: IC MUX DUAL 8:1 300OHM 28PLCC
Packaging: Cut Tape (CT)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 300Ohm
-3db Bandwidth: 217MHz
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 1pC
Crosstalk: -84dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+408.68 грн
10+353.27 грн
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IRF630STRRPBF sih630s.pdf
IRF630STRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+177.50 грн
10+110.14 грн
Мінімальне замовлення: 2
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IRF644STRLPBF sihf644s.pdf
IRF644STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+351.53 грн
10+224.20 грн
100+159.14 грн
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IRF710STRLPBF sihf710s.pdf
IRF710STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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IRF730ASTRLPBF sihf730a.pdf
IRF730ASTRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
товару немає в наявності
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IRF730STRLPBF sihf730s.pdf
IRF730STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 663 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.91 грн
10+145.33 грн
100+100.65 грн
Мінімальне замовлення: 2
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IRF820STRLPBF sihf820s.pdf
IRF820STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
товару немає в наявності
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IRFBC30ASTRLPBF doc?98239
IRFBC30ASTRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 3.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товару немає в наявності
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IRFBC40ASTRLPBF sihfbc40.pdf
IRFBC40ASTRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.23 грн
10+251.30 грн
100+179.81 грн
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IRFBE30STRLPBF doc?98731
IRFBE30STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+339.41 грн
10+215.87 грн
100+152.92 грн
Мінімальне замовлення: 2
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IRFBF30STRLPBF sihbf30s.pdf
IRFBF30STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 900V 3.6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 1389 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+339.41 грн
10+216.12 грн
100+153.11 грн
Мінімальне замовлення: 2
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IRFR014TRLPBF sihfr014.pdf
IRFR014TRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
на замовлення 2620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.10 грн
10+72.21 грн
100+51.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFR024TRLPBF sihfr024.pdf
IRFR024TRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+176.63 грн
10+109.39 грн
100+74.64 грн
500+56.10 грн
1000+55.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR1N60ATRLPBF sihfr1n6.pdf
IRFR1N60ATRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
товару немає в наявності
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IRFR210TRRPBF sihfr210.pdf
IRFR210TRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товару немає в наявності
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IRFR214TRLPBF sihfr214.pdf
IRFR214TRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товару немає в наявності
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IRFR220TRRPBF sihfr220.pdf
IRFR220TRRPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+158.45 грн
10+97.47 грн
100+66.02 грн
500+49.33 грн
1000+46.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR9010TRLPBF sihfr901.pdf
IRFR9010TRLPBF
Виробник: Vishay Siliconix
Description: MOSFET P-CH 50V 5.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товару немає в наявності
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IRFR9214TRLPBF sihfr921.pdf
IRFR9214TRLPBF
Виробник: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
на замовлення 2620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.89 грн
10+116.15 грн
100+79.00 грн
500+59.22 грн
1000+54.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS11N50ATRLP 91286.pdf
IRFS11N50ATRLP
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+288.33 грн
10+182.26 грн
100+127.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS11N50ATRRP 91286.pdf
IRFS11N50ATRRP
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
товару немає в наявності
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IRL510STRLPBF sihf510s.pdf
IRL510STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.95 грн
10+82.63 грн
100+60.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRL620STRLPBF sihl620s.pdf
IRL620STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
товару немає в наявності
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IRLZ14STRLPBF sihlz14s.pdf
IRLZ14STRLPBF
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 2233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+159.32 грн
10+98.05 грн
100+66.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI4421DY-T1-GE3 si4421dy.pdf
SI4421DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
на замовлення 13609 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+264.08 грн
10+165.34 грн
100+114.72 грн
500+87.34 грн
1000+80.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SI4634DY-T1-E3 si4634dy.pdf
SI4634DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 24.5A 8SO
на замовлення 4985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.66 грн
10+129.99 грн
100+104.47 грн
500+80.55 грн
1000+66.74 грн
Мінімальне замовлення: 3
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SI5441BDC-T1-GE3 si5441bd.pdf
SI5441BDC-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
товару немає в наявності
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SI8819EDB-T2-E1 si8819edb.pdf
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.89 грн
13+27.43 грн
100+17.43 грн
500+12.32 грн
1000+11.02 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SIA413ADJ-T1-GE3 sia413adj.pdf
SIA413ADJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.49 грн
10+72.54 грн
100+48.17 грн
500+35.38 грн
1000+32.21 грн
Мінімальне замовлення: 3
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SiA445EDJT-T1-GE3 sia445edjt.pdf
SiA445EDJT-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+37.23 грн
11+30.60 грн
100+21.30 грн
500+15.61 грн
1000+12.69 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SIC779ACD-T1-GE3
SIC779ACD-T1-GE3
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 35A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 35A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.01 грн
10+173.34 грн
25+163.59 грн
100+130.77 грн
250+122.79 грн
500+107.45 грн
1000+87.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHB23N60E-GE3 sihb23n60e.pdf
SIHB23N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 23A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
на замовлення 1086 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+356.73 грн
50+178.20 грн
100+162.16 грн
500+125.84 грн
1000+117.38 грн
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SIHB33N60ET1-GE3 sihb33n60e.pdf
SIHB33N60ET1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
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SIHD5N50D-E3 sihd5n50d.pdf
SIHD5N50D-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
товару немає в наявності
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SIHF12N50C-E3 sihp12n5.pdf
SIHF12N50C-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+446.78 грн
50+227.15 грн
100+207.60 грн
500+162.69 грн
В кошику  од. на суму  грн.
SiHF7N60E-GE3 sihf7n60e.pdf
SiHF7N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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SIHP16N50C-E3 sihp16n5.pdf
SIHP16N50C-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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SiHP23N60E-GE3 sihp23n60e.pdf
SiHP23N60E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
на замовлення 803 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.11 грн
50+152.38 грн
100+138.29 грн
500+106.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHP25N40D-E3 sihp25n40d.pdf
SIHP25N40D-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1707 pF @ 100 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+260.62 грн
50+137.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIHU6N62E-GE3 sihu6n62e.pdf
SIHU6N62E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 620V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
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SIR158DP-T1-RE3 sir158dp.pdf
SIR158DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.29 грн
10+114.73 грн
100+78.48 грн
500+59.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIR870ADP-T1-RE3 sir870adp.pdf
SIR870ADP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
на замовлення 2568 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+192.22 грн
10+137.91 грн
100+95.96 грн
500+75.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIRA90DP-T1-RE3 sira90dp.pdf
SIRA90DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
на замовлення 7764 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.33 грн
10+97.30 грн
100+76.12 грн
500+57.06 грн
1000+52.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIZ988DT-T1-GE3 siz988dt.pdf
SIZ988DT-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
на замовлення 10248 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+110.83 грн
10+95.55 грн
100+74.51 грн
500+57.76 грн
1000+45.60 грн
Мінімальне замовлення: 4
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SQ4532AEY-T1_GE3 sq4532aey.pdf
SQ4532AEY-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.21 грн
10+43.77 грн
25+39.35 грн
100+32.37 грн
250+30.20 грн
500+28.89 грн
1000+27.36 грн
Мінімальне замовлення: 6
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SQD100N03-3M2L_GE3 sqd100n03-3m2l.pdf
SQD100N03-3M2L_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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SQD100N03-3M4_GE3 sqd100n03-3m4.pdf
SQD100N03-3M4_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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SQD19P06-60L_T4GE3 sqd19p06.pdf
SQD19P06-60L_T4GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+176.63 грн
10+108.47 грн
100+73.67 грн
500+55.13 грн
1000+50.62 грн
Мінімальне замовлення: 2
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SQD25N06-22L_T4GE3 sqd25n06-22l.pdf
SQD25N06-22L_T4GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 25A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQD30N05-20L_GE3 sqd30n05-20l.pdf
SQD30N05-20L_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.34 грн
10+98.55 грн
100+67.55 грн
500+50.55 грн
1000+48.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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