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IPAN70R450P7SXKSA1 IPAN70R450P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R450P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 700V
Gate-source voltage: ±16V
Drain current: 6.5A
Gate charge: 13.1nC
On-state resistance: 0.45Ω
Power dissipation: 22.7W
Technology: CoolMOS™ P7
на замовлення 181 шт:
термін постачання 21-30 дні (днів)
7+70.99 грн
8+56.85 грн
10+50.26 грн
Мінімальне замовлення: 7
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IPA60R450E6XKSA1 IPA60R450E6XKSA1 INFINEON TECHNOLOGIES IPA60R450E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Gate-source voltage: ±20V
Drain current: 9.2A
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ E6
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IPD80R450P7ATMA1 IPD80R450P7ATMA1 INFINEON TECHNOLOGIES IPD80R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3; ESD
Case: PG-TO252-3
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Gate-source voltage: ±20V
Drain current: 7.1A
Gate charge: 24nC
On-state resistance: 0.45Ω
Power dissipation: 73W
Technology: CoolMOS™ P7
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TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES TLE7257.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 3mA
Kind of package: reel; tape
Number of transmitters: 1
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES irf7420pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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XMC4104F64F64ABXQMA1 XMC4104F64F64ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4108F64K64ABXQMA1 XMC4108F64K64ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4104F64K64ABXQSA1 XMC4104F64K64ABXQSA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4400F64K512ABXQSA1 XMC4400F64K512ABXQSA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of A/D channels: 9
Number of inputs/outputs: 31
Number of 16bit timers: 26
Memory: 80kB SRAM; 512kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
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IRS21094SPBF IRS21094SPBF INFINEON TECHNOLOGIES irs2109.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
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BCR555E6327HTSA1 BCR555E6327HTSA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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BCR555E6433HTMA1 BCR555E6433HTMA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES BCR505.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 1697 шт:
термін постачання 21-30 дні (днів)
28+15.97 грн
35+12.03 грн
40+10.46 грн
100+5.89 грн
250+4.90 грн
500+4.39 грн
1000+4.08 грн
Мінімальне замовлення: 28
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TT122N22KOFHPSA2 TT122N22KOFHPSA2 INFINEON TECHNOLOGIES TT122N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.95V
Load current: 122A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 3.3kA
Case: BG-PB34-1
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IGW60T120 IGW60T120 INFINEON TECHNOLOGIES IGW60T120-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 375W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Mounting: THT
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IGW60T120FKSA1 INFINEON TECHNOLOGIES IGW60T120_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428250e3d74 Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
118+306.14 грн
Мінімальне замовлення: 118
В кошику  од. на суму  грн.
IRF7805TRPBF IRF7805TRPBF INFINEON TECHNOLOGIES irf7805pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±12V
Drain current: 13A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhancement
Technology: HEXFET®
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 INFINEON TECHNOLOGIES TT250N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+15528.68 грн
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IPG20N06S4L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
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IPP020N06NAKSA1 IPP020N06NAKSA1 INFINEON TECHNOLOGIES IPP020N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES IPI020N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
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IPG20N10S4L35ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES IPT020N10N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES IPB020N10N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES IPB020N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPT020N10N5ATMA1 INFINEON TECHNOLOGIES infineon-ipt020n10n5-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 273W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 273W
Case: HSOF-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of channel: enhancement
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CY7C1470V25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of package: in-tray
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Kind of interface: parallel
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES IPP020N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
2+400.20 грн
3+334.53 грн
10+293.33 грн
Мінімальне замовлення: 2
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IAUZ20N08S5L300ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Features of semiconductor devices: logic level
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2EDL23N06PJXUMA1 2EDL23N06PJXUMA1 INFINEON TECHNOLOGIES 2EDL23x06xx.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Output current: -2.5...1.8A
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Number of channels: 2
Supply voltage: 10...20V
Type of integrated circuit: driver
Voltage class: 600V
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IRL530NSTRLPBF IRL530NSTRLPBF INFINEON TECHNOLOGIES irl530nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 3695 шт:
термін постачання 21-30 дні (днів)
4+117.13 грн
10+75.23 грн
50+56.61 грн
100+48.70 грн
250+38.40 грн
500+30.57 грн
Мінімальне замовлення: 4
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BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES BAT60BE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
на замовлення 1261 шт:
термін постачання 21-30 дні (днів)
21+21.30 грн
29+14.67 грн
50+10.63 грн
100+9.31 грн
500+7.00 грн
1000+6.34 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
IPD35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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IPB35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+82.52 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
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IPAN70R750P7SXKSA1 IPAN70R750P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R750P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
Power dissipation: 20.8W
Technology: CoolMOS™ P7
на замовлення 165 шт:
термін постачання 21-30 дні (днів)
12+38.16 грн
14+31.31 грн
15+29.33 грн
50+27.85 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES IPU95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 73W
Technology: CoolMOS™ P7
на замовлення 147 шт:
термін постачання 21-30 дні (днів)
4+123.34 грн
5+84.87 грн
10+76.63 грн
25+68.39 грн
50+64.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 INFINEON TECHNOLOGIES BSZ100N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 INFINEON TECHNOLOGIES BSZ100N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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XMC4104Q48K64ABXUMA1 XMC4104Q48K64ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4504F100F512ACXQMA1 XMC4504F100F512ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4504F100K512ACXQMA1 XMC4504F100K512ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4104F64F128ABXQMA1 XMC4104F64F128ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4104F64K128ABXQSA1 XMC4104F64K128ABXQSA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4104Q48F128ABXUMA1 XMC4104Q48F128ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4104Q48F64ABXUMA1 XMC4104Q48F64ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4104Q48K128ABXUMA1 XMC4104Q48K128ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4300F100F256AAXQMA1 XMC4300F100F256AAXQMA1 INFINEON TECHNOLOGIES XMC4300-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4300
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
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XMC4108Q48K64ABXUMA1 XMC4108Q48K64ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4300F100K256AAXQMA1 XMC4300F100K256AAXQMA1 INFINEON TECHNOLOGIES XMC4300-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4300
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
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XMC4504F144F512ACXQMA1 XMC4504F144F512ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4504F144K512ACXQMA1 XMC4504F144K512ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4100Q48F128ABXUMA1 XMC4100Q48F128ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4402F64F256ABXQMA1 XMC4402F64F256ABXQMA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4400
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4100F64F128ABXQMA1 XMC4100F64F128ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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IRLH5030TRPBF IRLH5030TRPBF INFINEON TECHNOLOGIES irlh5030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Case: PQFN5X6
Polarisation: unipolar
Power dissipation: 3.6W
Drain current: 13A
Drain-source voltage: 100V
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IPA80R1K0CEXKSA2 IPA80R1K0CEXKSA2 INFINEON TECHNOLOGIES IPA80R1K0CE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
5+105.60 грн
10+79.93 грн
20+72.51 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPAN70R450P7SXKSA1 IPAN70R450P7S.pdf
IPAN70R450P7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 700V
Gate-source voltage: ±16V
Drain current: 6.5A
Gate charge: 13.1nC
On-state resistance: 0.45Ω
Power dissipation: 22.7W
Technology: CoolMOS™ P7
на замовлення 181 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.99 грн
8+56.85 грн
10+50.26 грн
Мінімальне замовлення: 7
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IPA60R450E6XKSA1 IPA60R450E6-DTE.pdf
IPA60R450E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Gate-source voltage: ±20V
Drain current: 9.2A
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ E6
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IPD80R450P7ATMA1 IPD80R450P7.pdf
IPD80R450P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3; ESD
Case: PG-TO252-3
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Gate-source voltage: ±20V
Drain current: 7.1A
Gate charge: 24nC
On-state resistance: 0.45Ω
Power dissipation: 73W
Technology: CoolMOS™ P7
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TLE7257SJXUMA1 TLE7257.pdf
TLE7257SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 3mA
Kind of package: reel; tape
Number of transmitters: 1
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IRF7420TRPBF irf7420pbf.pdf
IRF7420TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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XMC4104F64F64ABXQMA1 XMC4100-4200-DTE.pdf
XMC4104F64F64ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4108F64K64ABXQMA1 XMC4100-4200-DTE.pdf
XMC4108F64K64ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4104F64K64ABXQSA1 XMC4100-4200-DTE.pdf
XMC4104F64K64ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4400F64K512ABXQSA1 XMC4400-DTE.pdf
XMC4400F64K512ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of A/D channels: 9
Number of inputs/outputs: 31
Number of 16bit timers: 26
Memory: 80kB SRAM; 512kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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IRS2108PBF irs2108.pdf
IRS2108PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
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IRS21094SPBF irs2109.pdf
IRS21094SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
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BCR555E6327HTSA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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BCR555E6433HTMA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6433HTMA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
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BCR505E6327 BCR505.pdf
BCR505E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 1697 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.97 грн
35+12.03 грн
40+10.46 грн
100+5.89 грн
250+4.90 грн
500+4.39 грн
1000+4.08 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
TT122N22KOFHPSA2 TT122N22KOF.pdf
TT122N22KOFHPSA2
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.95V
Load current: 122A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 3.3kA
Case: BG-PB34-1
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IGW60T120 IGW60T120-DTE.pdf
IGW60T120
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 375W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Mounting: THT
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IGW60T120FKSA1 IGW60T120_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428250e3d74
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
118+306.14 грн
Мінімальне замовлення: 118
В кошику  од. на суму  грн.
IRF7805TRPBF description irf7805pbf.pdf
IRF7805TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±12V
Drain current: 13A
Drain-source voltage: 30V
Case: SO8
Kind of channel: enhancement
Technology: HEXFET®
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TT250N18KOFHPSA1 TT250N18KOF.pdf
TT250N18KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+15528.68 грн
В кошику  од. на суму  грн.
IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
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IPP020N06NAKSA1 IPP020N06NAKSA1-DTE.pdf
IPP020N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPI020N06NAKSA1 IPI020N06N-DTE.pdf
IPI020N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
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IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
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IPT020N10N3ATMA1 IPT020N10N3-DTE.pdf
IPT020N10N3ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPB020N10N5ATMA1 IPB020N10N5-dte.pdf
IPB020N10N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB020N10N5LF IPB020N10N5LF.pdf
IPB020N10N5LF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPT020N10N5ATMA1 infineon-ipt020n10n5-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 273W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 273W
Case: HSOF-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of channel: enhancement
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CY7C1470V25-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of package: in-tray
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Kind of interface: parallel
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IPP020N08N5AKSA1 IPP020N08N5-DTE.pdf
IPP020N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+400.20 грн
3+334.53 грн
10+293.33 грн
Мінімальне замовлення: 2
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IAUZ20N08S5L300ATMA1 Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Features of semiconductor devices: logic level
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2EDL23N06PJXUMA1 2EDL23x06xx.pdf
2EDL23N06PJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Output current: -2.5...1.8A
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Number of channels: 2
Supply voltage: 10...20V
Type of integrated circuit: driver
Voltage class: 600V
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IRL530NSTRLPBF irl530nspbf.pdf
IRL530NSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 3695 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+117.13 грн
10+75.23 грн
50+56.61 грн
100+48.70 грн
250+38.40 грн
500+30.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAT60BE6327HTSA1 BAT60BE6327HTSA1.pdf
BAT60BE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
на замовлення 1261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+21.30 грн
29+14.67 грн
50+10.63 грн
100+9.31 грн
500+7.00 грн
1000+6.34 грн
Мінімальне замовлення: 21
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IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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IPB35N10S3L26ATMA1 Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+82.52 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
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IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
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IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
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IPAN70R750P7SXKSA1 IPAN70R750P7S.pdf
IPAN70R750P7SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
Power dissipation: 20.8W
Technology: CoolMOS™ P7
на замовлення 165 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+38.16 грн
14+31.31 грн
15+29.33 грн
50+27.85 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
IPU95R750P7AKMA1 IPU95R750P7.pdf
IPU95R750P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 73W
Technology: CoolMOS™ P7
на замовлення 147 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+123.34 грн
5+84.87 грн
10+76.63 грн
25+68.39 грн
50+64.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ100N03MSGATMA1 BSZ100N03MSG-DTE.pdf
BSZ100N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSZ100N03LSGATMA1 BSZ100N03LSG-DTE.pdf
BSZ100N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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XMC4104Q48K64ABXUMA1 XMC4100-4200-DTE.pdf
XMC4104Q48K64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4504F100F512ACXQMA1 XMC4500-DTE.pdf
XMC4504F100F512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4504F100K512ACXQMA1 XMC4500-DTE.pdf
XMC4504F100K512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4104F64F128ABXQMA1 XMC4100-4200-DTE.pdf
XMC4104F64F128ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4104F64K128ABXQSA1 XMC4100-4200-DTE.pdf
XMC4104F64K128ABXQSA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4104Q48F128ABXUMA1 XMC4100-4200-DTE.pdf
XMC4104Q48F128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
В кошику  од. на суму  грн.
XMC4104Q48F64ABXUMA1 XMC4100-4200-DTE.pdf
XMC4104Q48F64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
В кошику  од. на суму  грн.
XMC4104Q48K128ABXUMA1 XMC4100-4200-DTE.pdf
XMC4104Q48K128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4300F100F256AAXQMA1 XMC4300-DTE.pdf
XMC4300F100F256AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4300
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
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XMC4108Q48K64ABXUMA1 XMC4100-4200-DTE.pdf
XMC4108Q48K64ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4300F100K256AAXQMA1 XMC4300-DTE.pdf
XMC4300F100K256AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4300
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 256kB FLASH
Number of A/D channels: 14
Number of 16bit timers: 12
Number of inputs/outputs: 75
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
товару немає в наявності
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XMC4504F144F512ACXQMA1 XMC4500-DTE.pdf
XMC4504F144F512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4504F144K512ACXQMA1 XMC4500-DTE.pdf
XMC4504F144K512ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4100Q48F128ABXUMA1 XMC4100-4200-DTE.pdf
XMC4100Q48F128ABXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4402F64F256ABXQMA1 XMC4400-DTE.pdf
XMC4402F64F256ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4400
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
товару немає в наявності
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XMC4100F64F128ABXQMA1 XMC4100-4200-DTE.pdf
XMC4100F64F128ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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IRLH5030TRPBF irlh5030pbf.pdf
IRLH5030TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Mounting: SMD
Case: PQFN5X6
Polarisation: unipolar
Power dissipation: 3.6W
Drain current: 13A
Drain-source voltage: 100V
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IPA80R1K0CEXKSA2 IPA80R1K0CE.pdf
IPA80R1K0CEXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+105.60 грн
10+79.93 грн
20+72.51 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
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