| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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NLAS4684FCT1G | onsemi |
 Description: IC SW SPDTX2 800MOHM 10MICROBUMPNumber of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 1µA Channel Capacitance (CS(off), CD(off)): 102pF, 104pF Switch Time (Ton, Toff) (Max): 30ns, 30ns Channel-to-Channel Matching (ΔRon): 60mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -83dB @ 100kHz Charge Injection: 15pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 10-Microbump -3db Bandwidth: 9.5MHz On-State Resistance (Max): 800mOhm Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFBGA, FCBGA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLAS4717EPFCT1G | onsemi |
Description: IC SW SPDTX2 3.5OHM 10MICROBUMP Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 15pF Switch Time (Ton, Toff) (Max): 30ns, 40ns Channel-to-Channel Matching (ΔRon): 100mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -110dB @ 1MHz Charge Injection: 9pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 10-Microbump -3db Bandwidth: 90MHz On-State Resistance (Max): 3.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFBGA, FCBGA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLAS4783BMN1R2G | onsemi |
Description: IC SWITCH SPDT X 3 1OHM 16QFN Number of Circuits: 3 Part Status: Active Current - Leakage (IS(off)) (Max): 500nA Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 27ns, 20ns Channel-to-Channel Matching (ΔRon): 400mOhm (Max) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -62dB @ 100kHz Charge Injection: 50pC Voltage - Supply, Single (V+): 1.65V ~ 4.5V Supplier Device Package: 16-QFN (3x3) -3db Bandwidth: 17MHz On-State Resistance (Max): 1Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLAS4783MN1R2G | onsemi |
Description: IC SWITCH SPDT X 3 1OHM 16QFN Number of Circuits: 3 Part Status: Active Current - Leakage (IS(off)) (Max): 500nA Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 27ns, 20ns Channel-to-Channel Matching (ΔRon): 400mOhm (Max) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -62dB @ 100kHz Charge Injection: 50pC Voltage - Supply, Single (V+): 1.65V ~ 4.5V Supplier Device Package: 16-QFN (3x3) -3db Bandwidth: 17MHz On-State Resistance (Max): 1Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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NLAS5223BMNR2G | onsemi |
Description: IC SWITCH SPDTX2 350MOHM 10WQFN Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 500nA Channel Capacitance (CS(off), CD(off)): 60pF Switch Time (Ton, Toff) (Max): 50ns, 50ns Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 100kHz Charge Injection: 38pC Voltage - Supply, Single (V+): 1.65V ~ 4.5V Supplier Device Package: 10-WQFN (1.4x1.8) -3db Bandwidth: 19MHz On-State Resistance (Max): 350mOhm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-WFQFN Packaging: Cut Tape (CT) |
на замовлення 5616 шт: термін постачання 21-31 дні (днів) |
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NLAS5223LMNR2G | onsemi |
Description: IC SWITCH DUAL SPDT 10WQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLAS5223MNR2G | onsemi |
Description: IC SWITCH DUAL SPDT 10WQFN Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 100kHz Charge Injection: 38pC Voltage - Supply, Single (V+): 1.65V ~ 3.6V Supplier Device Package: 10-WQFN (1.4x1.8) -3db Bandwidth: 17MHz On-State Resistance (Max): 300mOhm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-WFQFN Packaging: Cut Tape (CT) Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 500nA Channel Capacitance (CS(off), CD(off)): 75pF Switch Time (Ton, Toff) (Max): 50ns, 30ns Channel-to-Channel Matching (ΔRon): 50mOhm (Max) |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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NLAS7222AMTR2G | onsemi |
Description: IC USB SWITCH DPDT 10WQFN Number of Channels: 1 Part Status: Active Switch Circuit: DPDT Voltage - Supply, Single (V+): 3V ~ 3.6V Supplier Device Package: 10-WQFN (1.4x1.8) -3db Bandwidth: 700MHz On-State Resistance (Max): 9Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-WFQFN Features: USB 2.0 Packaging: Cut Tape (CT) |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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NLASB3157MTR2G | onsemi |
Description: IC SWITCH SPDT X 1 7OHM 6WDFN Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 100nA Channel Capacitance (CS(off), CD(off)): 6.5pF Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel-to-Channel Matching (ΔRon): 150mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -54dB @ 10MHz Charge Injection: 7pC Voltage - Supply, Single (V+): 1.65V ~ 5.5V Supplier Device Package: 6-WDFN (1.2x1) -3db Bandwidth: 250MHz On-State Resistance (Max): 7Ohm Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 6-WFDFN Packaging: Cut Tape (CT) |
на замовлення 1153 шт: термін постачання 21-31 дні (днів) |
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NLAST4599DTT1G | onsemi |
Description: IC SWITCH SPDT X 1 25OHM 6TSOP Charge Injection: 3pC Voltage - Supply, Single (V+): 2V ~ 5.5V Supplier Device Package: 6-TSOP -3db Bandwidth: 200MHz On-State Resistance (Max): 25Ohm Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Switch Time (Ton, Toff) (Max): 14ns, 8ns Channel-to-Channel Matching (ΔRon): 2Ohm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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NLSF595DTR2G | onsemi |
Description: IC LED DRVR LINEAR 12MA 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Voltage - Output: 5.5V Mounting Type: Surface Mount Number of Outputs: 8 Type: Linear Operating Temperature: -55°C ~ 125°C (TA) Current - Output / Channel: 12mA Internal Switch(s): Yes Supplier Device Package: 16-TSSOP Voltage - Supply (Min): 2V Voltage - Supply (Max): 5.5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLSF595MNR2G | onsemi |
Description: IC LED DRIVER LINEAR 12MA 16QFN Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Voltage - Output: 5.5V Mounting Type: Surface Mount Number of Outputs: 8 Type: Linear Operating Temperature: -55°C ~ 125°C (TA) Current - Output / Channel: 12mA Internal Switch(s): Yes Supplier Device Package: 16-QFN (3x3) Voltage - Supply (Min): 2V Voltage - Supply (Max): 5.5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLVLCX125DTR2G | onsemi |
Description: IC LINE DRVR NON-INVERT 14TSSOP Supplier Device Package: 14-TSSOP Number of Bits per Element: 1 Logic Type: Line Driver, Non-Inverting Number of Elements: 4 Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NSBC115EDXV6T1G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 100kOhms Resistor - Base (R1): 100kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 196000 шт: термін постачання 21-31 дні (днів) |
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NSR0320MW2T3G | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD323 Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 29pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA Current - Reverse Leakage @ Vr: 50 µA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSR30CM3T5G | onsemi |
Description: DIODE ARR SCHOT 30V 200MA SOT723 Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 2 µA @ 25 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SOT-723 Current - Average Rectified (Io) (per Diode): 200mA (DC) |
на замовлення 44455 шт: термін постачання 21-31 дні (днів) |
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NSS20300MR6T1G | onsemi |
Description: TRANS PNP 20V 3A 6TSOP Power - Max: 545 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: 6-TSOP Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSS30100LT1G | onsemi |
Description: TRANS PNP 30V 1A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 310 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount |
на замовлення 5351 шт: термін постачання 21-31 дні (днів) |
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NSS30101LT1G | onsemi |
Description: TRANS NPN 30V 1A SOT23-3 Power - Max: 310 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 8570 шт: термін постачання 21-31 дні (днів) |
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NST30010MXV6T1G | onsemi |
Description: TRANS 2PNP 30V 100MA SOT-563 Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: SOT-563 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (Max): 30V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 PNP (Dual) Matched Pair Mounting Type: Surface Mount |
на замовлення 3627 шт: термін постачання 21-31 дні (днів) |
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NST3904DXV6T1G | onsemi |
Description: TRANS 2NPN 40V 200MA SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 17102 шт: термін постачання 21-31 дні (днів) |
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NST3946DXV6T1G | onsemi |
Description: TRANS NPN/PNP 40V 200MA SOT-563 Part Status: Active Supplier Device Package: SOT-563 Frequency - Transition: 300MHz, 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 12817 шт: термін постачання 21-31 дні (днів) |
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NST489AMT1G | onsemi |
Description: TRANS NPN 30V 2A 6-TSOP Power - Max: 535 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: 6-TSOP Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 47974 шт: термін постачання 21-31 дні (днів) |
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NTB23N03RT4G | onsemi |
Description: MOSFET N-CH 25V 23A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD14N03RT4G | onsemi |
 Description: MOSFET N-CH 25V 2.5A DPAKInput Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 4121 шт: термін постачання 21-31 дні (днів) |
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NTD20N06T4G | onsemi |
Description: MOSFET N-CH 60V 20A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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NTD3055-150T4G | onsemi |
Description: MOSFET N-CH 60V 9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
на замовлення 15636 шт: термін постачання 21-31 дні (днів) |
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NTD40N03RT4G | onsemi |
Description: MOSFET N-CH 25V 7.8A/32A DPAK Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD4302T4G | onsemi |
Description: MOSFET N-CH 30V 8.4A/68A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) FET Type: N-Channel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD78N03T4G | onsemi |
Description: MOSFET N-CH 25V 11.4A/78A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTF5P03T3G | onsemi |
Description: MOSFET P-CH 30V 3.7A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-223 (TO-261) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 4994 шт: термін постачання 21-31 дні (днів) |
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NTF6P02T3G | onsemi |
Description: MOSFET P-CH 20V 10A SOT223 Power Dissipation (Max): 8.3W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-223 (TO-261) Vgs(th) (Max) @ Id: 1V @ 250µA |
на замовлення 49916 шт: термін постачання 21-31 дні (днів) |
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NTGS3130NT1G | onsemi |
Description: MOSFET N-CH 20V 4.23A 6TSOP Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 846 шт: термін постачання 21-31 дні (днів) |
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NTHD3102CT1G | onsemi |
Description: MOSFET N/P-CH 20V 4A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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NTHD4102PT1G | onsemi |
Description: MOSFET 2P-CH 20V 2.9A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
на замовлення 22191 шт: термін постачання 21-31 дні (днів) |
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NTHD4P02FT1G | onsemi |
Description: MOSFET P-CH 20V 2.2A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj) Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 1720 шт: термін постачання 21-31 дні (днів) |
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NTHS4101PT1G | onsemi |
Description: MOSFET P-CH 20V 4.8A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj) Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V |
на замовлення 7781 шт: термін постачання 21-31 дні (днів) |
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NTHS5404T1G | onsemi |
Description: MOSFET N-CH 20V 5.2A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTHS5441T1G | onsemi |
Description: MOSFET P-CH 20V 3.9A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTJD4158CT1G | onsemi |
Description: MOSFET N/P-CH 30V/20V 0.25A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
на замовлення 30265 шт: термін постачання 21-31 дні (днів) |
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NTJS4160NT1G | onsemi |
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 300mW (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTK3043NT1G | onsemi |
Description: MOSFET N-CH 20V 210MA SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-723 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTLJD3115PT1G | onsemi |
Description: MOSFET 2P-CH 20V 2.3A 6WDFN Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2.3A Drain to Source Voltage (Vdss): 20V Power - Max: 710mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate |
на замовлення 5010 шт: термін постачання 21-31 дні (днів) |
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NTLJD3119CTBG | onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
на замовлення 17061 шт: термін постачання 21-31 дні (днів) |
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NTLJF3117PT1G | onsemi |
Description: MOSFET P-CH 20V 2.3A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V |
на замовлення 17917 шт: термін постачання 21-31 дні (днів) |
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NTLJF4156NT1G | onsemi |
Description: MOSFET N-CH 30V 2.5A 6WDFN Power Dissipation (Max): 710mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA |
на замовлення 12053 шт: термін постачання 21-31 дні (днів) |
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NTLJS4114NT1G | onsemi |
Description: MOSFET N-CH 30V 3.6A 6WDFN Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1023 шт: термін постачання 21-31 дні (днів) |
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NTMD4N03R2G | onsemi |
Description: MOSFET 2N-CH 30V 4A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 14404 шт: термін постачання 21-31 дні (днів) |
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NTMD6N03R2G | onsemi |
Description: MOSFET 2N-CH 30V 6A 8SOIC Drain to Source Voltage (Vdss): 30V Power - Max: 1.29W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Current - Continuous Drain (Id) @ 25°C: 6A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS4122NT1G | onsemi |
Description: MOSFET N-CH 30V 9.1A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS4744NT1G | onsemi |
Description: MOSFET N-CH 30V 7A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMS10P02R2G | onsemi |
Description: MOSFET P-CH 20V 8.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 33448 шт: термін постачання 21-31 дні (днів) |
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NTMS4107NR2G | onsemi |
Description: MOSFET N-CH 30V 11A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 930mW (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMS5P02R2G | onsemi |
Description: MOSFET P-CH 20V 3.95A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 790mW (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2422 шт: термін постачання 21-31 дні (днів) |
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NTR4501NT1 | onsemi |
Description: MOSFET N-CH 20V 3.2A SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTS4409NT1G | onsemi |
Description: MOSFET N-CH 25V 700MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Tj) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
на замовлення 92293 шт: термін постачання 21-31 дні (днів) |
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NUD4011DR2G | onsemi |
Description: IC LED DRVR LIN PWM 70MA 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 198V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 70mA Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Max): 200V Part Status: Active Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NUF2042XV6T1G | onsemi |
Description: FILTER RC(PI) 22 OHMS ESD SMD Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -55°C ~ 125°C Values: R = 22Ohms, C = 42pF (Total) Height: 0.024" (0.60mm) Filter Order: 2nd Applications: USB Technology: RC (Pi) Resistance - Channel (Ohms): 22 ESD Protection: Yes Part Status: Active Number of Channels: 2 |
на замовлення 157624 шт: термін постачання 21-31 дні (днів) |
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NUF2114MNT1G | onsemi |
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 9Ohms, C = 60pF Height: 0.039" (1.00mm) Attenuation Value: -30dB @ 900MHz ~ 3GHz Filter Order: 2nd Applications: Audio Technology: RC (Pi) Center / Cutoff Frequency: 50MHz (Cutoff) Resistance - Channel (Ohms): 9 ESD Protection: Yes Part Status: Active Number of Channels: 2 |
на замовлення 26091 шт: термін постачання 21-31 дні (днів) |
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NUF2116MNT1G | onsemi |
Description: FILTER RC(PI) 64 OHM/50PF SMD Number of Channels: 2 ESD Protection: Yes Resistance - Channel (Ohms): 64 Center / Cutoff Frequency: 55MHz (Cutoff) Technology: RC (Pi) Applications: Audio Filter Order: 2nd Attenuation Value: -35dB @ 800MHz ~ 3GHz Height: 0.039" (1.00mm) Values: R = 64Ohms, C = 50pF Operating Temperature: -40°C ~ 85°C Type: Low Pass Mounting Type: Surface Mount Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm) Package / Case: 8-VFDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| NLAS4684FCT1G |
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Виробник: onsemi
Description: IC SW SPDTX2 800MOHM 10MICROBUMP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel-to-Channel Matching (ΔRon): 60mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -83dB @ 100kHz
Charge Injection: 15pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-Microbump
-3db Bandwidth: 9.5MHz
On-State Resistance (Max): 800mOhm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Description: IC SW SPDTX2 800MOHM 10MICROBUMP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 102pF, 104pF
Switch Time (Ton, Toff) (Max): 30ns, 30ns
Channel-to-Channel Matching (ΔRon): 60mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -83dB @ 100kHz
Charge Injection: 15pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-Microbump
-3db Bandwidth: 9.5MHz
On-State Resistance (Max): 800mOhm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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| NLAS4717EPFCT1G |
|
Виробник: onsemi
Description: IC SW SPDTX2 3.5OHM 10MICROBUMP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 15pF
Switch Time (Ton, Toff) (Max): 30ns, 40ns
Channel-to-Channel Matching (ΔRon): 100mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 9pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-Microbump
-3db Bandwidth: 90MHz
On-State Resistance (Max): 3.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, FCBGA
Packaging: Cut Tape (CT)
Description: IC SW SPDTX2 3.5OHM 10MICROBUMP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 15pF
Switch Time (Ton, Toff) (Max): 30ns, 40ns
Channel-to-Channel Matching (ΔRon): 100mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 9pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-Microbump
-3db Bandwidth: 90MHz
On-State Resistance (Max): 3.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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| NLAS4783BMN1R2G |
|
Виробник: onsemi
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 100kHz
Charge Injection: 50pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 100kHz
Charge Injection: 50pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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| NLAS4783MN1R2G |
|
Виробник: onsemi
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 100kHz
Charge Injection: 50pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 100kHz
Charge Injection: 50pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 222 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.91 грн |
| 10+ | 89.24 грн |
| 25+ | 84.74 грн |
| 100+ | 61.05 грн |
| NLAS5223BMNR2G |
|
Виробник: onsemi
Description: IC SWITCH SPDTX2 350MOHM 10WQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 60pF
Switch Time (Ton, Toff) (Max): 50ns, 50ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 100kHz
Charge Injection: 38pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 19MHz
On-State Resistance (Max): 350mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Packaging: Cut Tape (CT)
Description: IC SWITCH SPDTX2 350MOHM 10WQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 60pF
Switch Time (Ton, Toff) (Max): 50ns, 50ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 100kHz
Charge Injection: 38pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 19MHz
On-State Resistance (Max): 350mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Packaging: Cut Tape (CT)
на замовлення 5616 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.82 грн |
| 10+ | 47.36 грн |
| 25+ | 39.37 грн |
| 100+ | 28.41 грн |
| 250+ | 24.22 грн |
| 500+ | 21.64 грн |
| 1000+ | 19.16 грн |
| NLAS5223LMNR2G |
|
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10WQFN
Description: IC SWITCH DUAL SPDT 10WQFN
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| NLAS5223MNR2G |
|
Виробник: onsemi
Description: IC SWITCH DUAL SPDT 10WQFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 100kHz
Charge Injection: 38pC
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 300mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 75pF
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Description: IC SWITCH DUAL SPDT 10WQFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 100kHz
Charge Injection: 38pC
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 300mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 75pF
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.60 грн |
| 10+ | 79.01 грн |
| 25+ | 75.04 грн |
| 100+ | 57.85 грн |
| 250+ | 54.08 грн |
| 500+ | 47.79 грн |
| 1000+ | 37.11 грн |
| NLAS7222AMTR2G |
|
Виробник: onsemi
Description: IC USB SWITCH DPDT 10WQFN
Number of Channels: 1
Part Status: Active
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 9Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
Description: IC USB SWITCH DPDT 10WQFN
Number of Channels: 1
Part Status: Active
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 9Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.74 грн |
| 10+ | 66.71 грн |
| 25+ | 63.33 грн |
| 100+ | 45.64 грн |
| 250+ | 40.33 грн |
| 500+ | 38.21 грн |
| 1000+ | 29.23 грн |
| NLASB3157MTR2G |
|
Виробник: onsemi
Description: IC SWITCH SPDT X 1 7OHM 6WDFN
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 6.5pF
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel-to-Channel Matching (ΔRon): 150mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -54dB @ 10MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 6-WDFN (1.2x1)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 7Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN
Packaging: Cut Tape (CT)
Description: IC SWITCH SPDT X 1 7OHM 6WDFN
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 6.5pF
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel-to-Channel Matching (ΔRon): 150mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -54dB @ 10MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 6-WDFN (1.2x1)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 7Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN
Packaging: Cut Tape (CT)
на замовлення 1153 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.87 грн |
| 12+ | 25.35 грн |
| 25+ | 20.81 грн |
| 100+ | 14.72 грн |
| 250+ | 12.36 грн |
| 500+ | 10.91 грн |
| 1000+ | 9.54 грн |
| NLAST4599DTT1G |
|
Виробник: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 200MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 200MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.41 грн |
| 11+ | 27.72 грн |
| 25+ | 25.38 грн |
| 100+ | 16.05 грн |
| 250+ | 13.29 грн |
| NLSF595DTR2G |
|
Виробник: onsemi
Description: IC LED DRVR LINEAR 12MA 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-TSSOP
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRVR LINEAR 12MA 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-TSSOP
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
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од. на суму грн.
| NLSF595MNR2G |
|
Виробник: onsemi
Description: IC LED DRIVER LINEAR 12MA 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRIVER LINEAR 12MA 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
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од. на суму грн.
| NLVLCX125DTR2G |
|
Виробник: onsemi
Description: IC LINE DRVR NON-INVERT 14TSSOP
Supplier Device Package: 14-TSSOP
Number of Bits per Element: 1
Logic Type: Line Driver, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC LINE DRVR NON-INVERT 14TSSOP
Supplier Device Package: 14-TSSOP
Number of Bits per Element: 1
Logic Type: Line Driver, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.67 грн |
| 10+ | 72.86 грн |
| 25+ | 69.17 грн |
| 100+ | 49.85 грн |
| 250+ | 44.05 грн |
| 500+ | 41.73 грн |
| 1000+ | 31.93 грн |
| NSBC115EDXV6T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 100kOhms
Resistor - Base (R1): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 100kOhms
Resistor - Base (R1): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 196000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.25 грн |
| 15+ | 19.94 грн |
| 100+ | 10.06 грн |
| 500+ | 7.70 грн |
| 1000+ | 5.72 грн |
| 2000+ | 4.81 грн |
| NSR0320MW2T3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
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од. на суму грн.
| NSR30CM3T5G |
|
Виробник: onsemi
Description: DIODE ARR SCHOT 30V 200MA SOT723
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-723
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Description: DIODE ARR SCHOT 30V 200MA SOT723
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-723
Current - Average Rectified (Io) (per Diode): 200mA (DC)
на замовлення 44455 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.78 грн |
| 46+ | 6.52 грн |
| 100+ | 5.18 грн |
| 500+ | 4.03 грн |
| 1000+ | 3.43 грн |
| 2000+ | 3.17 грн |
| NSS20300MR6T1G |
|
Виробник: onsemi
Description: TRANS PNP 20V 3A 6TSOP
Power - Max: 545 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS PNP 20V 3A 6TSOP
Power - Max: 545 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.26 грн |
| 10+ | 32.69 грн |
| 100+ | 24.39 грн |
| 500+ | 17.98 грн |
| 1000+ | 13.89 грн |
| NSS30100LT1G |
|
Виробник: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Description: TRANS PNP 30V 1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
на замовлення 5351 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.48 грн |
| 17+ | 18.38 грн |
| 100+ | 12.41 грн |
| 500+ | 9.05 грн |
| 1000+ | 8.19 грн |
| NSS30101LT1G |
|
Виробник: onsemi
Description: TRANS NPN 30V 1A SOT23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 1A SOT23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 8570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.48 грн |
| 17+ | 18.38 грн |
| 100+ | 12.41 грн |
| 500+ | 9.05 грн |
| 1000+ | 8.19 грн |
| NST30010MXV6T1G |
|
Виробник: onsemi
Description: TRANS 2PNP 30V 100MA SOT-563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair
Mounting Type: Surface Mount
Description: TRANS 2PNP 30V 100MA SOT-563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair
Mounting Type: Surface Mount
на замовлення 3627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.57 грн |
| 13+ | 24.68 грн |
| 100+ | 15.82 грн |
| 500+ | 11.23 грн |
| 1000+ | 10.06 грн |
| 2000+ | 9.08 грн |
| NST3904DXV6T1G |
|
Виробник: onsemi
Description: TRANS 2NPN 40V 200MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
Description: TRANS 2NPN 40V 200MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 17102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.79 грн |
| 17+ | 18.31 грн |
| 100+ | 11.61 грн |
| 500+ | 8.14 грн |
| 1000+ | 7.25 грн |
| 2000+ | 6.50 грн |
| NST3946DXV6T1G |
|
Виробник: onsemi
Description: TRANS NPN/PNP 40V 200MA SOT-563
Part Status: Active
Supplier Device Package: SOT-563
Frequency - Transition: 300MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP 40V 200MA SOT-563
Part Status: Active
Supplier Device Package: SOT-563
Frequency - Transition: 300MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 12817 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.33 грн |
| 16+ | 19.12 грн |
| 100+ | 12.08 грн |
| 500+ | 8.47 грн |
| 1000+ | 7.54 грн |
| 2000+ | 6.76 грн |
| NST489AMT1G |
|
Виробник: onsemi
Description: TRANS NPN 30V 2A 6-TSOP
Power - Max: 535 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 6-TSOP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 2A 6-TSOP
Power - Max: 535 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 6-TSOP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 47974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.81 грн |
| 10+ | 36.84 грн |
| 100+ | 23.92 грн |
| 500+ | 17.24 грн |
| 1000+ | 15.56 грн |
| NTB23N03RT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 23A D2PAK
Description: MOSFET N-CH 25V 23A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| NTD14N03RT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4121 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.51 грн |
| 10+ | 47.51 грн |
| 100+ | 31.22 грн |
| 500+ | 22.74 грн |
| 1000+ | 20.63 грн |
| NTD20N06T4G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.17 грн |
| 10+ | 88.35 грн |
| 100+ | 60.07 грн |
| 500+ | 45.03 грн |
| 1000+ | 41.38 грн |
| NTD3055-150T4G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 15636 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.37 грн |
| 10+ | 55.74 грн |
| 100+ | 36.96 грн |
| 500+ | 27.11 грн |
| 1000+ | 24.66 грн |
| NTD40N03RT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTD4302T4G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
FET Type: N-Channel
товару немає в наявності
В кошику
од. на суму грн.
| NTD78N03T4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 11.4A/78A DPAK
Description: MOSFET N-CH 25V 11.4A/78A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| NTF5P03T3G |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 4994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.66 грн |
| 10+ | 44.99 грн |
| 100+ | 29.53 грн |
| 500+ | 21.47 грн |
| 1000+ | 19.45 грн |
| 2000+ | 17.76 грн |
| NTF6P02T3G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 10A SOT223
Power Dissipation (Max): 8.3W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET P-CH 20V 10A SOT223
Power Dissipation (Max): 8.3W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 1V @ 250µA
на замовлення 49916 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.44 грн |
| 10+ | 51.59 грн |
| 100+ | 33.96 грн |
| 500+ | 24.77 грн |
| 1000+ | 22.48 грн |
| 2000+ | 20.55 грн |
| NTGS3130NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 4.23A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 4.23A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 846 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.29 грн |
| 10+ | 53.96 грн |
| 100+ | 35.61 грн |
| 500+ | 26.00 грн |
| NTHD3102CT1G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.91 грн |
| NTHD4102PT1G |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
на замовлення 22191 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.38 грн |
| 10+ | 68.64 грн |
| 100+ | 45.71 грн |
| 500+ | 33.70 грн |
| 1000+ | 30.73 грн |
| NTHD4P02FT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 2.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET P-CH 20V 2.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 1720 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.94 грн |
| 10+ | 88.87 грн |
| 100+ | 60.37 грн |
| 500+ | 45.19 грн |
| 1000+ | 41.50 грн |
| NTHS4101PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
на замовлення 7781 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.38 грн |
| 10+ | 68.56 грн |
| 100+ | 45.74 грн |
| 500+ | 33.76 грн |
| 1000+ | 30.81 грн |
| NTHS5404T1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 5.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Description: MOSFET N-CH 20V 5.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
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| NTHS5441T1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 3.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V
Description: MOSFET P-CH 20V 3.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V
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| NTJD4158CT1G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 30265 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 17+ | 17.86 грн |
| 100+ | 11.31 грн |
| 500+ | 7.92 грн |
| 1000+ | 7.05 грн |
| NTJS4160NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300mW (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300mW (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
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| NTK3043NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 210MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V
Description: MOSFET N-CH 20V 210MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V
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| NTLJD3115PT1G |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 710mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 710mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
на замовлення 5010 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.82 грн |
| 10+ | 42.40 грн |
| 100+ | 27.72 грн |
| 500+ | 20.10 грн |
| 1000+ | 18.19 грн |
| NTLJD3119CTBG |
|
Виробник: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
на замовлення 17061 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.36 грн |
| 10+ | 49.74 грн |
| 100+ | 32.81 грн |
| 500+ | 23.95 грн |
| 1000+ | 21.74 грн |
| NTLJF3117PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
на замовлення 17917 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.88 грн |
| 10+ | 32.17 грн |
| 100+ | 20.75 грн |
| 500+ | 14.84 грн |
| 1000+ | 13.35 грн |
| NTLJF4156NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 2.5A 6WDFN
Power Dissipation (Max): 710mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET N-CH 30V 2.5A 6WDFN
Power Dissipation (Max): 710mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
на замовлення 12053 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.95 грн |
| 10+ | 38.40 грн |
| 100+ | 26.74 грн |
| 500+ | 19.59 грн |
| 1000+ | 15.92 грн |
| NTLJS4114NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 3.6A 6WDFN
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 3.6A 6WDFN
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.91 грн |
| 10+ | 57.22 грн |
| 100+ | 37.89 грн |
| 500+ | 27.77 грн |
| 1000+ | 25.26 грн |
| NTMD4N03R2G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 14404 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.36 грн |
| 10+ | 49.88 грн |
| 100+ | 32.78 грн |
| 500+ | 23.87 грн |
| 1000+ | 21.65 грн |
| NTMD6N03R2G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A 8SOIC
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Current - Continuous Drain (Id) @ 25°C: 6A
Description: MOSFET 2N-CH 30V 6A 8SOIC
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Current - Continuous Drain (Id) @ 25°C: 6A
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS4122NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 9.1A 5DFN
Description: MOSFET N-CH 30V 9.1A 5DFN
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS4744NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
Description: MOSFET N-CH 30V 7A 5DFN
товару немає в наявності
В кошику
од. на суму грн.
| NTMS10P02R2G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 8.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 8.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 33448 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.95 грн |
| 10+ | 99.40 грн |
| 100+ | 74.02 грн |
| 500+ | 55.61 грн |
| 1000+ | 51.16 грн |
| NTMS4107NR2G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTMS5P02R2G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 790mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.95A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 790mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.58 грн |
| 10+ | 61.52 грн |
| 100+ | 47.98 грн |
| 500+ | 37.20 грн |
| 1000+ | 29.36 грн |
| NTR4501NT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTS4409NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 700MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 25V 700MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
на замовлення 92293 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.49 грн |
| 13+ | 22.98 грн |
| 100+ | 14.64 грн |
| 500+ | 10.35 грн |
| 1000+ | 9.25 грн |
| NUD4011DR2G |
|
Виробник: onsemi
Description: IC LED DRVR LIN PWM 70MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 198V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 70mA
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 200V
Part Status: Active
Grade: Automotive
Description: IC LED DRVR LIN PWM 70MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 198V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 70mA
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 200V
Part Status: Active
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| NUF2042XV6T1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 22 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
Description: FILTER RC(PI) 22 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
на замовлення 157624 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.79 грн |
| 13+ | 24.02 грн |
| 25+ | 22.18 грн |
| 50+ | 19.56 грн |
| 100+ | 18.39 грн |
| 250+ | 16.96 грн |
| 500+ | 15.69 грн |
| 1000+ | 14.76 грн |
| NUF2114MNT1G |
|
Виробник: onsemi
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 9Ohms, C = 60pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 50MHz (Cutoff)
Resistance - Channel (Ohms): 9
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 9Ohms, C = 60pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 50MHz (Cutoff)
Resistance - Channel (Ohms): 9
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
на замовлення 26091 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.19 грн |
| 10+ | 43.95 грн |
| 25+ | 40.53 грн |
| 50+ | 35.75 грн |
| 100+ | 33.63 грн |
| 250+ | 31.01 грн |
| 500+ | 28.70 грн |
| 1000+ | 26.99 грн |
| NUF2116MNT1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 64 OHM/50PF SMD
Number of Channels: 2
ESD Protection: Yes
Resistance - Channel (Ohms): 64
Center / Cutoff Frequency: 55MHz (Cutoff)
Technology: RC (Pi)
Applications: Audio
Filter Order: 2nd
Attenuation Value: -35dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 64Ohms, C = 50pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: FILTER RC(PI) 64 OHM/50PF SMD
Number of Channels: 2
ESD Protection: Yes
Resistance - Channel (Ohms): 64
Center / Cutoff Frequency: 55MHz (Cutoff)
Technology: RC (Pi)
Applications: Audio
Filter Order: 2nd
Attenuation Value: -35dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 64Ohms, C = 50pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.