| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NSS20300MR6T1G | onsemi |
Description: TRANS PNP 20V 3A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V Frequency - Transition: 100MHz Supplier Device Package: 6-TSOP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 545 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSS30100LT1G | onsemi |
Description: TRANS PNP 30V 1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
на замовлення 5351 шт: термін постачання 21-31 дні (днів) |
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NSS30101LT1G | onsemi |
Description: TRANS NPN 30V 1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW |
на замовлення 8570 шт: термін постачання 21-31 дні (днів) |
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NST30010MXV6T1G | onsemi |
Description: TRANS 2PNP 30V 100MA SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 |
на замовлення 3627 шт: термін постачання 21-31 дні (днів) |
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NST3904DXV6T1G | onsemi |
Description: TRANS 2NPN 40V 200MA SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 17102 шт: термін постачання 21-31 дні (днів) |
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NST3946DXV6T1G | onsemi |
Description: TRANS NPN/PNP 40V 200MA SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz, 250MHz Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 12817 шт: термін постачання 21-31 дні (днів) |
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NST489AMT1G | onsemi |
Description: TRANS NPN 30V 2A 6-TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 300MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 535 mW |
на замовлення 47974 шт: термін постачання 21-31 дні (днів) |
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NTB23N03RT4G | onsemi |
Description: MOSFET N-CH 25V 23A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD14N03RT4G | onsemi |
Description: MOSFET N-CH 25V 2.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V |
на замовлення 4121 шт: термін постачання 21-31 дні (днів) |
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NTD20N06T4G | onsemi |
Description: MOSFET N-CH 60V 20A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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NTD3055-150T4G | onsemi |
Description: MOSFET N-CH 60V 9A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
на замовлення 15636 шт: термін постачання 21-31 дні (днів) |
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NTD40N03RT4G | onsemi |
Description: MOSFET N-CH 25V 7.8A/32A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD4302T4G | onsemi |
Description: MOSFET N-CH 30V 8.4A/68A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD78N03T4G | onsemi |
Description: MOSFET N-CH 25V 11.4A/78A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTF5P03T3G | onsemi |
Description: MOSFET P-CH 30V 3.7A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
на замовлення 4994 шт: термін постачання 21-31 дні (днів) |
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NTF6P02T3G | onsemi |
Description: MOSFET P-CH 20V 10A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V Power Dissipation (Max): 8.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V |
на замовлення 17166 шт: термін постачання 21-31 дні (днів) |
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NTGS3130NT1G | onsemi |
Description: MOSFET N-CH 20V 4.23A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V |
на замовлення 846 шт: термін постачання 21-31 дні (днів) |
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NTHD3102CT1G | onsemi |
Description: MOSFET N/P-CH 20V 4A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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NTHD4102PT1G | onsemi |
Description: MOSFET 2P-CH 20V 2.9A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
на замовлення 20413 шт: термін постачання 21-31 дні (днів) |
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NTHD4P02FT1G | onsemi |
Description: MOSFET P-CH 20V 2.2A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj) Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 1720 шт: термін постачання 21-31 дні (днів) |
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NTHS4101PT1G | onsemi |
Description: MOSFET P-CH 20V 4.8A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj) Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V |
на замовлення 7781 шт: термін постачання 21-31 дні (днів) |
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NTHS5404T1G | onsemi |
Description: MOSFET N-CH 20V 5.2A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTHS5441T1G | onsemi |
Description: MOSFET P-CH 20V 3.9A CHIPFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTJD4158CT1G | onsemi |
Description: MOSFET N/P-CH 30V/20V 0.25A SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
на замовлення 30265 шт: термін постачання 21-31 дні (днів) |
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NTJS4160NT1G | onsemi |
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTK3043NT1G | onsemi |
Description: MOSFET N-CH 20V 210MA SOT723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-723 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTLJD3115PT1G | onsemi |
Description: MOSFET 2P-CH 20V 2.3A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
на замовлення 5010 шт: термін постачання 21-31 дні (днів) |
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NTLJD3119CTBG | onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
на замовлення 17061 шт: термін постачання 21-31 дні (днів) |
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NTLJF3117PT1G | onsemi |
Description: MOSFET P-CH 20V 2.3A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V |
на замовлення 17917 шт: термін постачання 21-31 дні (днів) |
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NTLJF4156NT1G | onsemi |
Description: MOSFET N-CH 30V 2.5A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V |
на замовлення 12053 шт: термін постачання 21-31 дні (днів) |
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NTLJS4114NT1G | onsemi |
Description: MOSFET N-CH 30V 3.6A 6WDFNPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
на замовлення 1023 шт: термін постачання 21-31 дні (днів) |
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NTMD4N03R2G | onsemi |
Description: MOSFET 2N-CH 30V 4A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 30588 шт: термін постачання 21-31 дні (днів) |
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NTMD6N03R2G | onsemi |
Description: MOSFET 2N-CH 30V 6A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.29W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS4122NT1G | onsemi |
Description: MOSFET N-CH 30V 9.1A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS4744NT1G | onsemi |
Description: MOSFET N-CH 30V 7A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMS10P02R2G | onsemi |
Description: MOSFET P-CH 20V 8.8A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V |
на замовлення 33448 шт: термін постачання 21-31 дні (днів) |
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NTMS4107NR2G | onsemi |
Description: MOSFET N-CH 30V 11A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Power Dissipation (Max): 930mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMS5P02R2G | onsemi |
Description: MOSFET P-CH 20V 3.95A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Power Dissipation (Max): 790mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V |
на замовлення 2422 шт: термін постачання 21-31 дні (днів) |
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NTR4501NT1 | onsemi |
Description: MOSFET N-CH 20V 3.2A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTS4409NT1G | onsemi |
Description: MOSFET N-CH 25V 700MA SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Tj) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
на замовлення 92293 шт: термін постачання 21-31 дні (днів) |
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NUD4011DR2G | onsemi |
Description: IC LED DRVR LIN PWM 70MA 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 198V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 70mA Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Max): 200V Part Status: Active Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NUF2042XV6T1G | onsemi |
Description: FILTER RC(PI) 22 OHMS ESD SMDPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -55°C ~ 125°C Values: R = 22Ohms, C = 42pF (Total) Height: 0.024" (0.60mm) Filter Order: 2nd Applications: USB Technology: RC (Pi) Resistance - Channel (Ohms): 22 ESD Protection: Yes Part Status: Active Number of Channels: 2 |
на замовлення 67337 шт: термін постачання 21-31 дні (днів) |
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NUF2114MNT1G | onsemi |
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMDPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 9Ohms, C = 60pF Height: 0.039" (1.00mm) Attenuation Value: -30dB @ 900MHz ~ 3GHz Filter Order: 2nd Applications: Audio Technology: RC (Pi) Center / Cutoff Frequency: 50MHz (Cutoff) Resistance - Channel (Ohms): 9 ESD Protection: Yes Part Status: Active Number of Channels: 2 |
на замовлення 26091 шт: термін постачання 21-31 дні (днів) |
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NUF2116MNT1G | onsemi |
Description: FILTER RC(PI) 64 OHM/50PF SMDPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 64Ohms, C = 50pF Height: 0.039" (1.00mm) Attenuation Value: -35dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Audio Technology: RC (Pi) Center / Cutoff Frequency: 55MHz (Cutoff) Resistance - Channel (Ohms): 64 ESD Protection: Yes Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NUF2230XV6T1G | onsemi |
Description: FILTER RC(PI) 100 OHM/16PF SMDPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 16pF Height: 0.024" (0.60mm) Attenuation Value: -30dB @ 800MHz ~ 900MHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 125MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 2 |
на замовлення 6716 шт: термін постачання 21-31 дні (днів) |
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NUF4402MNT1G | onsemi |
Description: FILTER RC(PI) 100 OHM/12PF SMDPackaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 12pF Height: 0.039" (1.00mm) Attenuation Value: -25dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 151MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 4 |
на замовлення 21715 шт: термін постачання 21-31 дні (днів) |
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NUF6401MNT1G | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMDPackaging: Cut Tape (CT) Package / Case: 12-VFDFN Exposed Pad Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -45°C ~ 105°C Values: R = 100Ohms, C = 17pF Height: 0.039" (1.00mm) Attenuation Value: -30dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 110MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 6 |
на замовлення 4300 шт: термін постачання 21-31 дні (днів) |
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NUF8401MNT4G | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMDPackaging: Cut Tape (CT) Package / Case: 16-VFDFN Exposed Pad Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 12pF Height: 0.039" (1.00mm) Attenuation Value: -25dB @ 800MHz ~ 2.2GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 175MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 8 |
на замовлення 3516 шт: термін постачання 21-31 дні (днів) |
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NUF8402MNT4G | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMDPackaging: Cut Tape (CT) Package / Case: 16-VFDFN Exposed Pad Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 17pF Height: 0.039" (1.00mm) Attenuation Value: -35dB @ 800MHz ~ 2.2GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 105MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NUF8410MNT4G | onsemi |
Description: FILTER RC(PI) 100 OHM/8.5PF SMDPackaging: Cut Tape (CT) Package / Case: 16-VFDFN Exposed Pad Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 8.5pF Height: 0.039" (1.00mm) Attenuation Value: -20dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 250MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 8 |
на замовлення 2846 шт: термін постачання 21-31 дні (днів) |
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NUP1105LT1G | onsemi |
Description: TVS DIODE 24VWM 44VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 60pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Min) Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NUP2202W1T2G | onsemi |
Description: TVS DIODE 5VWM 20VC SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SC-88/SC70-6/SOT-363 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 500W Power Line Protection: Yes |
на замовлення 7969 шт: термін постачання 21-31 дні (днів) |
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NUP4102XV6T1G | onsemi |
Description: TVS DIODE 12VWM 25VC SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 13pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOT-563 Bidirectional Channels: 4 Voltage - Breakdown (Min): 13.6V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 75W Power Line Protection: No |
на замовлення 4750 шт: термін постачання 21-31 дні (днів) |
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NUP4202W1T2G | onsemi |
Description: TVS DIODE 5VWM 14.5VC SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 28A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SC-88/SC70-6/SOT-363 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 14.5V (Typ) Power - Peak Pulse: 500W Power Line Protection: No |
на замовлення 8865 шт: термін постачання 21-31 дні (днів) |
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NUP4302MR6T1G | onsemi |
Description: TVS DIODE 25VWM 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 25V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 30V Power Line Protection: No |
на замовлення 51853 шт: термін постачання 21-31 дні (днів) |
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NUP4304MR6T1G | onsemi |
Description: TVS DIODE SC74Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1.6pF @ 1MHz Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Breakdown (Min): 70V Power Line Protection: No |
на замовлення 11494 шт: термін постачання 21-31 дні (днів) |
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NUP5120X6T1G | onsemi |
Description: TVS DIODE 5VWM SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 54pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-563 Unidirectional Channels: 5 Voltage - Breakdown (Min): 6.2V Power - Peak Pulse: 90W Power Line Protection: No |
на замовлення 37009 шт: термін постачання 21-31 дні (днів) |
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NUP5120X6T2G | onsemi |
Description: TVS DIODE 5VWM SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 54pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-563 Unidirectional Channels: 5 Voltage - Breakdown (Min): 6.2V Power - Peak Pulse: 90W Power Line Protection: No |
на замовлення 7738 шт: термін постачання 21-31 дні (днів) |
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NZQA5V6XV5T1G | onsemi |
Description: TVS DIODE 3VWM 10.5VC SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-553 Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.32V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 100W Power Line Protection: No Part Status: Active |
на замовлення 11312 шт: термін постачання 21-31 дні (днів) |
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SA571DR2G | onsemi |
Description: IC COMPANDOR 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Compandor Interface: Analog Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 6V ~ 18V Specifications: 110dB Applications: Consumer Audio, Telecommunication Systems Supplier Device Package: 16-SOIC Part Status: Active Number of Channels: 2 |
на замовлення 664 шт: термін постачання 21-31 дні (днів) |
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| NSS20300MR6T1G |
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Виробник: onsemi
Description: TRANS PNP 20V 3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 545 mW
Description: TRANS PNP 20V 3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 545 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.81 грн |
| 10+ | 33.15 грн |
| 100+ | 24.73 грн |
| 500+ | 18.23 грн |
| 1000+ | 14.09 грн |
| NSS30100LT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
на замовлення 5351 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.88 грн |
| 17+ | 18.64 грн |
| 100+ | 12.58 грн |
| 500+ | 9.18 грн |
| 1000+ | 8.31 грн |
| NSS30101LT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
Description: TRANS NPN 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
на замовлення 8570 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.88 грн |
| 17+ | 18.64 грн |
| 100+ | 12.58 грн |
| 500+ | 9.18 грн |
| 1000+ | 8.31 грн |
| NST30010MXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP 30V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Description: TRANS 2PNP 30V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
на замовлення 3627 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.15 грн |
| 13+ | 25.03 грн |
| 100+ | 16.04 грн |
| 500+ | 11.39 грн |
| 1000+ | 10.21 грн |
| 2000+ | 9.21 грн |
| NST3904DXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS 2NPN 40V 200MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
Description: TRANS 2NPN 40V 200MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 17102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.22 грн |
| 17+ | 18.57 грн |
| 100+ | 11.77 грн |
| 500+ | 8.25 грн |
| 1000+ | 7.35 грн |
| 2000+ | 6.59 грн |
| NST3946DXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS NPN/PNP 40V 200MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz, 250MHz
Supplier Device Package: SOT-563
Part Status: Active
Description: TRANS NPN/PNP 40V 200MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz, 250MHz
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 12817 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.78 грн |
| 16+ | 19.39 грн |
| 100+ | 12.25 грн |
| 500+ | 8.59 грн |
| 1000+ | 7.65 грн |
| 2000+ | 6.85 грн |
| NST489AMT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 30V 2A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
Description: TRANS NPN 30V 2A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
на замовлення 47974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.66 грн |
| 10+ | 37.36 грн |
| 100+ | 24.26 грн |
| 500+ | 17.48 грн |
| 1000+ | 15.78 грн |
| NTB23N03RT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 25V 23A D2PAK
Description: MOSFET N-CH 25V 23A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| NTD14N03RT4G | ![]() |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 25V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Description: MOSFET N-CH 25V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
на замовлення 4121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.62 грн |
| 10+ | 48.18 грн |
| 100+ | 31.66 грн |
| 500+ | 23.06 грн |
| 1000+ | 20.92 грн |
| NTD20N06T4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.19 грн |
| 10+ | 89.60 грн |
| 100+ | 60.91 грн |
| 500+ | 45.66 грн |
| 1000+ | 41.96 грн |
| NTD3055-150T4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 15636 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.67 грн |
| 10+ | 56.52 грн |
| 100+ | 37.48 грн |
| 500+ | 27.49 грн |
| 1000+ | 25.01 грн |
| NTD40N03RT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| NTD4302T4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
товару немає в наявності
В кошику
од. на суму грн.
| NTD78N03T4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 25V 11.4A/78A DPAK
Description: MOSFET N-CH 25V 11.4A/78A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| NTF5P03T3G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: MOSFET P-CH 30V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
на замовлення 4994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.71 грн |
| 10+ | 45.63 грн |
| 100+ | 29.95 грн |
| 500+ | 21.77 грн |
| 1000+ | 19.72 грн |
| 2000+ | 18.01 грн |
| NTF6P02T3G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Description: MOSFET P-CH 20V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Power Dissipation (Max): 8.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
на замовлення 17166 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 82.74 грн |
| 10+ | 50.14 грн |
| 100+ | 33.00 грн |
| 500+ | 24.07 грн |
| 1000+ | 21.85 грн |
| 2000+ | 19.99 грн |
| NTGS3130NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Description: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
на замовлення 846 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.55 грн |
| 10+ | 54.72 грн |
| 100+ | 36.11 грн |
| 500+ | 26.37 грн |
| NTHD3102CT1G |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 105.38 грн |
| NTHD4102PT1G |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
на замовлення 20413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.84 грн |
| 10+ | 67.42 грн |
| 100+ | 44.95 грн |
| 500+ | 33.13 грн |
| 1000+ | 30.22 грн |
| NTHD4P02FT1G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 2.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET P-CH 20V 2.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 1720 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.97 грн |
| 10+ | 90.12 грн |
| 100+ | 61.21 грн |
| 500+ | 45.82 грн |
| 1000+ | 42.08 грн |
| NTHS4101PT1G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
на замовлення 7781 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.96 грн |
| 10+ | 69.53 грн |
| 100+ | 46.38 грн |
| 500+ | 34.24 грн |
| 1000+ | 31.24 грн |
| NTHS5404T1G |
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Виробник: onsemi
Description: MOSFET N-CH 20V 5.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Description: MOSFET N-CH 20V 5.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
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| NTHS5441T1G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 3.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V
Description: MOSFET P-CH 20V 3.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V
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| NTJD4158CT1G |
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Виробник: onsemi
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 30265 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.44 грн |
| 17+ | 18.11 грн |
| 100+ | 11.47 грн |
| 500+ | 8.03 грн |
| 1000+ | 7.15 грн |
| NTJS4160NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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од. на суму грн.
| NTK3043NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 20V 210MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V
Description: MOSFET N-CH 20V 210MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V
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од. на суму грн.
| NTLJD3115PT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
на замовлення 5010 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.81 грн |
| 10+ | 42.99 грн |
| 100+ | 28.11 грн |
| 500+ | 20.38 грн |
| 1000+ | 18.45 грн |
| NTLJD3119CTBG |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
на замовлення 17061 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.52 грн |
| 10+ | 50.44 грн |
| 100+ | 33.27 грн |
| 500+ | 24.28 грн |
| 1000+ | 22.05 грн |
| NTLJF3117PT1G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
на замовлення 17917 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.64 грн |
| 10+ | 32.62 грн |
| 100+ | 21.04 грн |
| 500+ | 15.05 грн |
| 1000+ | 13.54 грн |
| NTLJF4156NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 2.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V
Description: MOSFET N-CH 30V 2.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V
на замовлення 12053 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.61 грн |
| 10+ | 38.94 грн |
| 100+ | 27.11 грн |
| 500+ | 19.87 грн |
| 1000+ | 16.15 грн |
| NTLJS4114NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 1023 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.23 грн |
| 10+ | 58.03 грн |
| 100+ | 38.42 грн |
| 500+ | 28.16 грн |
| 1000+ | 25.61 грн |
| NTMD4N03R2G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 30588 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.64 грн |
| 10+ | 52.54 грн |
| 100+ | 34.52 грн |
| 500+ | 25.13 грн |
| 1000+ | 22.79 грн |
| NTMD6N03R2G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.29W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.29W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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| NTMFS4122NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 9.1A 5DFN
Description: MOSFET N-CH 30V 9.1A 5DFN
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| NTMFS4744NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
Description: MOSFET N-CH 30V 7A 5DFN
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| NTMS10P02R2G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 8.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
Description: MOSFET P-CH 20V 8.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
на замовлення 33448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.26 грн |
| 10+ | 100.80 грн |
| 100+ | 75.06 грн |
| 500+ | 56.40 грн |
| 1000+ | 51.88 грн |
| NTMS4107NR2G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
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од. на суму грн.
| NTMS5P02R2G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 790mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Description: MOSFET P-CH 20V 3.95A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 790mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
на замовлення 2422 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.59 грн |
| 10+ | 62.39 грн |
| 100+ | 48.65 грн |
| 500+ | 37.72 грн |
| 1000+ | 29.78 грн |
| NTR4501NT1 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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од. на суму грн.
| NTS4409NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 25V 700MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 25V 700MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
на замовлення 92293 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.03 грн |
| 13+ | 23.30 грн |
| 100+ | 14.85 грн |
| 500+ | 10.49 грн |
| 1000+ | 9.38 грн |
| NUD4011DR2G |
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Виробник: onsemi
Description: IC LED DRVR LIN PWM 70MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 198V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 70mA
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 200V
Part Status: Active
Grade: Automotive
Description: IC LED DRVR LIN PWM 70MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 198V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 70mA
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 200V
Part Status: Active
Grade: Automotive
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од. на суму грн.
| NUF2042XV6T1G |
![]() |
Виробник: onsemi
Description: FILTER RC(PI) 22 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
Description: FILTER RC(PI) 22 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
на замовлення 67337 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.44 грн |
| 13+ | 23.60 грн |
| 25+ | 21.80 грн |
| 50+ | 19.23 грн |
| 100+ | 18.08 грн |
| 250+ | 16.68 грн |
| 500+ | 15.43 грн |
| 1000+ | 14.51 грн |
| NUF2114MNT1G |
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Виробник: onsemi
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 9Ohms, C = 60pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 50MHz (Cutoff)
Resistance - Channel (Ohms): 9
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 9Ohms, C = 60pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 50MHz (Cutoff)
Resistance - Channel (Ohms): 9
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
на замовлення 26091 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.98 грн |
| 10+ | 44.57 грн |
| 25+ | 41.10 грн |
| 50+ | 36.26 грн |
| 100+ | 34.10 грн |
| 250+ | 31.45 грн |
| 500+ | 29.10 грн |
| 1000+ | 27.37 грн |
| NUF2116MNT1G |
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Виробник: onsemi
Description: FILTER RC(PI) 64 OHM/50PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 64Ohms, C = 50pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 55MHz (Cutoff)
Resistance - Channel (Ohms): 64
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 64 OHM/50PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 64Ohms, C = 50pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 55MHz (Cutoff)
Resistance - Channel (Ohms): 64
ESD Protection: Yes
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
| NUF2230XV6T1G |
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Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/16PF SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF
Height: 0.024" (0.60mm)
Attenuation Value: -30dB @ 800MHz ~ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 125MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 100 OHM/16PF SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF
Height: 0.024" (0.60mm)
Attenuation Value: -30dB @ 800MHz ~ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 125MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
на замовлення 6716 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 16.99 грн |
| 25+ | 16.48 грн |
| 50+ | 14.94 грн |
| 100+ | 14.16 грн |
| 250+ | 11.85 грн |
| 500+ | 9.04 грн |
| 1000+ | 8.61 грн |
| NUF4402MNT1G |
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Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 12pF
Height: 0.039" (1.00mm)
Attenuation Value: -25dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 151MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Description: FILTER RC(PI) 100 OHM/12PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 12pF
Height: 0.039" (1.00mm)
Attenuation Value: -25dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 151MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
на замовлення 21715 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.69 грн |
| 10+ | 34.50 грн |
| 25+ | 28.14 грн |
| 50+ | 23.73 грн |
| 100+ | 21.56 грн |
| 250+ | 20.49 грн |
| 500+ | 18.03 грн |
| 1000+ | 16.97 грн |
| NUF6401MNT1G |
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Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -45°C ~ 105°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 110MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -45°C ~ 105°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 110MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.32 грн |
| 14+ | 21.50 грн |
| 25+ | 19.81 грн |
| 50+ | 17.47 грн |
| 100+ | 16.42 грн |
| 250+ | 15.14 грн |
| 500+ | 14.01 грн |
| 1000+ | 13.18 грн |
| NUF8401MNT4G |
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Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 12pF
Height: 0.039" (1.00mm)
Attenuation Value: -25dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 175MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 12pF
Height: 0.039" (1.00mm)
Attenuation Value: -25dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 175MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
на замовлення 3516 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.00 грн |
| 13+ | 25.03 грн |
| 25+ | 23.12 грн |
| 50+ | 20.40 грн |
| 100+ | 19.18 грн |
| 250+ | 17.68 грн |
| 500+ | 16.36 грн |
| 1000+ | 15.39 грн |
| NUF8402MNT4G |
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Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 105MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 105MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
товару немає в наявності
В кошику
од. на суму грн.
| NUF8410MNT4G |
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Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/8.5PF SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
Description: FILTER RC(PI) 100 OHM/8.5PF SMD
Packaging: Cut Tape (CT)
Package / Case: 16-VFDFN Exposed Pad
Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
на замовлення 2846 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.27 грн |
| 10+ | 42.39 грн |
| 25+ | 34.61 грн |
| 50+ | 29.18 грн |
| 100+ | 26.52 грн |
| 250+ | 25.19 грн |
| 500+ | 22.17 грн |
| 1000+ | 20.87 грн |
| NUP1105LT1G |
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Виробник: onsemi
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| NUP2202W1T2G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 20VC SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Description: TVS DIODE 5VWM 20VC SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 500W
Power Line Protection: Yes
на замовлення 7969 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.40 грн |
| 10+ | 35.18 грн |
| 100+ | 24.22 грн |
| 500+ | 18.03 грн |
| 1000+ | 16.45 грн |
| NUP4102XV6T1G |
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Виробник: onsemi
Description: TVS DIODE 12VWM 25VC SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-563
Bidirectional Channels: 4
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 75W
Power Line Protection: No
Description: TVS DIODE 12VWM 25VC SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-563
Bidirectional Channels: 4
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 75W
Power Line Protection: No
на замовлення 4750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.27 грн |
| 28+ | 11.05 грн |
| 100+ | 10.90 грн |
| NUP4202W1T2G |
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Виробник: onsemi
Description: TVS DIODE 5VWM 14.5VC SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 5VWM 14.5VC SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 8865 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.25 грн |
| 10+ | 61.86 грн |
| 100+ | 41.04 грн |
| 500+ | 30.13 грн |
| 1000+ | 27.43 грн |
| NUP4302MR6T1G |
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Виробник: onsemi
Description: TVS DIODE 25VWM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 30V
Power Line Protection: No
Description: TVS DIODE 25VWM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 25V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 30V
Power Line Protection: No
на замовлення 51853 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.09 грн |
| 10+ | 71.78 грн |
| 100+ | 48.18 грн |
| 500+ | 35.72 грн |
| 1000+ | 32.66 грн |
| NUP4304MR6T1G |
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Виробник: onsemi
Description: TVS DIODE SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
Description: TVS DIODE SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.6pF @ 1MHz
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Breakdown (Min): 70V
Power Line Protection: No
на замовлення 11494 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.88 грн |
| 17+ | 18.64 грн |
| 100+ | 12.53 грн |
| 500+ | 9.14 грн |
| 1000+ | 7.74 грн |
| NUP5120X6T1G |
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Виробник: onsemi
Description: TVS DIODE 5VWM SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-563
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.2V
Power - Peak Pulse: 90W
Power Line Protection: No
Description: TVS DIODE 5VWM SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-563
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.2V
Power - Peak Pulse: 90W
Power Line Protection: No
на замовлення 37009 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.34 грн |
| 14+ | 23.00 грн |
| 100+ | 11.62 грн |
| 500+ | 8.90 грн |
| 1000+ | 6.60 грн |
| 2000+ | 5.55 грн |
| NUP5120X6T2G |
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Виробник: onsemi
Description: TVS DIODE 5VWM SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-563
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.2V
Power - Peak Pulse: 90W
Power Line Protection: No
Description: TVS DIODE 5VWM SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-563
Unidirectional Channels: 5
Voltage - Breakdown (Min): 6.2V
Power - Peak Pulse: 90W
Power Line Protection: No
на замовлення 7738 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.34 грн |
| 14+ | 23.00 грн |
| 100+ | 11.62 грн |
| 500+ | 8.90 грн |
| 1000+ | 6.60 грн |
| 2000+ | 5.55 грн |
| NZQA5V6XV5T1G |
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Виробник: onsemi
Description: TVS DIODE 3VWM 10.5VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM 10.5VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
на замовлення 11312 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.44 грн |
| 14+ | 23.08 грн |
| 100+ | 13.86 грн |
| 500+ | 12.05 грн |
| 1000+ | 8.19 грн |
| 2000+ | 7.54 грн |
| SA571DR2G |
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Виробник: onsemi
Description: IC COMPANDOR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Compandor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 6V ~ 18V
Specifications: 110dB
Applications: Consumer Audio, Telecommunication Systems
Supplier Device Package: 16-SOIC
Part Status: Active
Number of Channels: 2
Description: IC COMPANDOR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Compandor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 6V ~ 18V
Specifications: 110dB
Applications: Consumer Audio, Telecommunication Systems
Supplier Device Package: 16-SOIC
Part Status: Active
Number of Channels: 2
на замовлення 664 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.82 грн |
| 10+ | 72.91 грн |
| 25+ | 66.15 грн |
| 100+ | 55.12 грн |
| 250+ | 51.80 грн |
| 500+ | 49.81 грн |































