| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NCP1631DR2G | onsemi |
 Description: IC PFC CTL CRM/DCM 130KHZ 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10V ~ 15V Frequency - Switching: 130kHz Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Supplier Device Package: 16-SOIC Part Status: Not For New Designs Current - Startup: 100 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
NCP2811ADTBR2G | onsemi |
Description: IC AMP AB STEREO 110MW 14TSSOP Packaging: Tape & Reel (TR) Features: Depop, Short-Circuit and Thermal Protection, Shutdown Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Headphones, 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5V Max Output Power x Channels @ Load: 110mW x 2 @ 16Ohm Supplier Device Package: 14-TSSOP |
на замовлення 65000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NCP2811BDTBR2G | onsemi |
Description: IC AMP AB STEREO 110MW 14TSSOP Packaging: Tape & Reel (TR) Features: Depop, Short-Circuit and Thermal Protection, Shutdown Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Headphones, 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5V Max Output Power x Channels @ Load: 110mW x 2 @ 16Ohm Supplier Device Package: 14-TSSOP |
товар відсутній |
|||||||||||||||
 |
NCP349MNBGTBG | onsemi |
Description: IC VOLTAGE DETECTOR OVP 6DFN |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NCP349MNBKTBG | onsemi |
Description: IC VOLTAGE DETECTOR OVP 6DFN |
товар відсутній |
|||||||||||||||
 |
NCP4200MNR2G | onsemi |
Description: IC REG CONV PENTIUM 1OUT 40QFN |
товар відсутній |
|||||||||||||||
 |
NCP5212TMNTXG | onsemi |
Description: IC REG CTRLR BUCK 16QFN Packaging: Tape & Reel (TR) Package / Case: 16-VQFN Exposed Pad Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 4.5V ~ 27V Supplier Device Package: 16-QFN (4x4) Synchronous Rectifier: Yes Control Features: Current Limit, Enable, Power Good Output Phases: 1 Clock Sync: Yes Number of Outputs: 1 |
товар відсутній |
|||||||||||||||
 |
NDD04N60Z-1G | onsemi |
Description: MOSFET N-CH 600V 4.1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
товар відсутній |
|||||||||||||||
 |
NDD04N60ZT4G | onsemi |
Description: MOSFET N-CH 600V 4.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
товар відсутній |
|||||||||||||||
 |
NLSV1T34AMX1TCG | onsemi |
Description: IC TRANSLATOR UNIDIR 6ULLGA Packaging: Tape & Reel (TR) Package / Case: 6-XFLGA Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 4.5V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 6-ULLGA (1.45x1) |
товар відсутній |
|||||||||||||||
 |
NLSV1T34DFT2G | onsemi |
Description: IC TRNSLTR UNIDIRECTIONAL SC88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 4.5V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: SC-88A (SC-70-5/SOT-353) |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
NLSX3018DTR2G | onsemi |
Description: IC TRNSLTR BIDIRECTIONAL 20TSSOP |
товар відсутній |
|||||||||||||||
 |
NLSX3018DWR2G | onsemi |
Description: IC TRNSLTR BIDIRECTIONAL 20SOIC |
товар відсутній |
|||||||||||||||
 |
NLX1G99AMX1TCG | onsemi |
Description: IC MINIGATE MULTIFUNC 8ULLGA Packaging: Tape & Reel (TR) Package / Case: 8-XFLGA Output Type: Tri-State Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 4 Schmitt Trigger Input: Yes Supplier Device Package: 8-ULLGA (1.95x1) Number of Circuits: 1 |
товар відсутній |
|||||||||||||||
|
|
NLX1G99BMX1TCG | onsemi |
Description: IC MINIGATE MULTIFUNC 8ULLGA Packaging: Tape & Reel (TR) Package / Case: 8-XFLGA Output Type: Tri-State Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 4 Schmitt Trigger Input: Yes Supplier Device Package: 8-ULLGA (1.6x1) Number of Circuits: 1 |
товар відсутній |
|||||||||||||||
|
|
NLX1G99CMX1TCG | onsemi |
Description: IC MINIGATE MULTIFUNC 8ULLGA Packaging: Tape & Reel (TR) Package / Case: 8-XFLGA Output Type: Tri-State Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 4 Schmitt Trigger Input: Yes Supplier Device Package: 8-ULLGA (1.45x1) Number of Circuits: 1 |
товар відсутній |
|||||||||||||||
 |
NSI50010YT1G | onsemi |
Description: IC CURRENT REGULATOR SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 50V Current - Output: 10mA Operating Temperature: -55°C ~ 150°C Supplier Device Package: SOD-123 Part Status: Active |
товар відсутній |
|||||||||||||||
 |
NTB6412ANG | onsemi |
Description: MOSFET N-CH 100V 58A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
товар відсутній |
|||||||||||||||
|
|
NTB6412ANT4G | onsemi |
Description: MOSFET N-CH 100V 58A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
товар відсутній |
|||||||||||||||
|
|
NTD6414AN-1G | onsemi |
Description: MOSFET N-CH 100V 32A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
товар відсутній |
|||||||||||||||
|
|
NTD6414ANT4G | onsemi |
Description: MOSFET N-CH 100V 32A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
NTD6416AN-1G | onsemi |
Description: MOSFET N-CH 100V 17A IPAK |
товар відсутній |
|||||||||||||||
|
|
NTD6416ANL-1G | onsemi |
Description: MOSFET N-CH 100V 19A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
товар відсутній |
|||||||||||||||
|
|
NTD6416ANLT4G | onsemi |
Description: MOSFET N-CH 100V 19A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
NTD6416ANT4G | onsemi |
Description: MOSFET N-CH 100V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
NTMFS4852NT1G | onsemi |
Description: MOSFET N-CH 30V 16A/155A 5DFN |
товар відсутній |
|||||||||||||||
|
|
NTMFS4921NT1G | onsemi |
Description: MOSFET N-CH 30V 8.8A/58.5A 5DFN |
товар відсутній |
|||||||||||||||
|
|
NTMFS4921NT3G | onsemi |
Description: MOSFET N-CH 30V 8.8A/58.5A 5DFN |
товар відсутній |
|||||||||||||||
 |
NTMS4920NR2G | onsemi |
Description: MOSFET N-CH 30V 10.6A 8SOIC |
товар відсутній |
|||||||||||||||
 |
NTP6411ANG | onsemi |
Description: MOSFET N-CH 100V 77A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
товар відсутній |
|||||||||||||||
|
|
NTP6412ANG | onsemi |
Description: MOSFET N-CH 100V 58A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
на замовлення 114 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
NTTFS4800NTAG | onsemi |
Description: MOSFET N-CH 30V 5A/32A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta), 33.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V |
товар відсутній |
|||||||||||||||
|
|
NTTFS4840NTAG | onsemi |
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 27.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V |
товар відсутній |
|||||||||||||||
|
|
NTTFS4932NTAG | onsemi |
Description: MOSFET N-CH 30V 11A/79A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 850mW (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V |
товар відсутній |
|||||||||||||||
 |
NTTFS4937NTAG | onsemi |
Description: MOSFET N-CH 30V 11A/75A 8WDFN |
товар відсутній |
|||||||||||||||
|
|
NTTFS4937NTWG | onsemi |
Description: MOSFET N-CH 30V 11A/75A 8WDFN |
товар відсутній |
|||||||||||||||
|
|
NTTFS4939NTAG | onsemi |
Description: MOSFET N-CH 30V 8.9A/52A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 850mW (Ta), 29.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 15 V |
товар відсутній |
|||||||||||||||
|
|
NTTFS4941NTAG | onsemi |
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V |
товар відсутній |
|||||||||||||||
|
|
NTTFS4941NTWG | onsemi |
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN |
товар відсутній |
|||||||||||||||
|
|
NTTFS4943NTAG | onsemi |
Description: MOSFET N-CH 30V 8A/41A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 22.3W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V |
товар відсутній |
|||||||||||||||
|
|
NTTFS4943NTWG | onsemi |
Description: MOSFET N-CH 30V 8A/41A 8WDFN |
товар відсутній |
|||||||||||||||
|
|
NTTFS4945NTAG | onsemi |
Description: MOSFET N-CH 30V 7.1A/34A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 890mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V |
товар відсутній |
|||||||||||||||
|
|
NTTFS4945NTWG | onsemi |
Description: MOSFET N-CH 30V 7.1A/34A 8WDFN |
товар відсутній |
|||||||||||||||
 |
NCP3418DR2 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 150°C (TJ) Voltage - Supply: 4.6V ~ 13.2V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 30 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 18ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
 |
FDPF8N50NZ | onsemi |
Description: MOSFET N-CH 500V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 40.3W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FDP5N50NZ | onsemi |
Description: MOSFET N-CH 500V 4.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
на замовлення 3522 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
FAN7930M | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Frequency - Switching: 250kHz ~ 350kHz Mode: Critical Conduction (CRM) Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Startup: 120 µA |
товар відсутній |
|||||||||||||||
|
|
FGP5N60LS | onsemi |
Description: IGBT FIELD STOP 600V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 12V, 14A Supplier Device Package: TO-220-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 4.3ns/36ns Switching Energy: 38µJ (on), 130µJ (off) Test Condition: 400V, 5A, 10Ohm, 15V Gate Charge: 18.3 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 36 A Power - Max: 83 W |
товар відсутній |
|||||||||||||||
 |
FDD86102 | onsemi |
Description: MOSFET N-CH 100V 8A/36A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V |
товар відсутній |
|||||||||||||||
 |
FXMA108BQX | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 20DQFN Features: Auto-Direction Sensing, Power-Off Protection Packaging: Tape & Reel (TR) Package / Case: 20-WFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 20-DQFN (2.5x4.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
FDD86102 | onsemi |
Description: MOSFET N-CH 100V 8A/36A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V |
на замовлення 2270 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
FXMA108BQX | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 20DQFN Packaging: Cut Tape (CT) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 20-WFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 20-DQFN (2.5x4.5) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 15016 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
7WBD3306AMUTCG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8UDFN Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 8-UDFN (1.8x1.2) |
товар відсутній |
|||||||||||||||
 |
7WBD3306USG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 US8 Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: US8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
ADP3212AMNR2G | onsemi |
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Voltage - Output: Up to 1.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.3V ~ 22V Operating Temperature: -40°C ~ 100°C Applications: Controller, Intel IMVP-6.5™ Supplier Device Package: 48-QFN (7x7) |
товар відсутній |
|||||||||||||||
 |
ASM3I2669AF-06OR | onsemi |
Description: IC FREQ MOD 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Output: CMOS Frequency - Max: 13MHz Type: Frequency Modulator, Spread Spectrum Clock Generator Input: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 6-TSOP PLL: Yes Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
 |
ASM3P2107AF-08SR | onsemi |
Description: IC FREQ MOD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS, TTL Frequency - Max: 22MHz Type: Frequency Modulator, Spread Spectrum Clock Generator Input: Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
 |
ASM3P2108AF-08SR | onsemi |
Description: IC FREQ MOD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS, TTL Frequency - Max: 45MHz Type: Frequency Modulator, Spread Spectrum Clock Generator Input: Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
|
|
ASM3P2180AF-08SR | onsemi |
Description: IC FREQ MOD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS Frequency - Max: 30MHz Type: Frequency Modulator, Spread Spectrum Clock Generator Input: Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.8V ~ 3.7V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
|
|
ASM3P2182AF-08SR | onsemi |
Description: IC FREQ MOD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: CMOS, TTL Frequency - Max: 210MHz Type: Frequency Modulator, Spread Spectrum Clock Generator Input: CMOS, TTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.7V ~ 3.7V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
| NCP1631DR2G |
|
Виробник: onsemi
Description: IC PFC CTL CRM/DCM 130KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 15V
Frequency - Switching: 130kHz
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Current - Startup: 100 µA
Description: IC PFC CTL CRM/DCM 130KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 15V
Frequency - Switching: 130kHz
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Current - Startup: 100 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 50.8 грн |
| NCP2811ADTBR2G |
|
Виробник: onsemi
Description: IC AMP AB STEREO 110MW 14TSSOP
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Headphones, 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5V
Max Output Power x Channels @ Load: 110mW x 2 @ 16Ohm
Supplier Device Package: 14-TSSOP
Description: IC AMP AB STEREO 110MW 14TSSOP
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Headphones, 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5V
Max Output Power x Channels @ Load: 110mW x 2 @ 16Ohm
Supplier Device Package: 14-TSSOP
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 31.22 грн |
| 5000+ | 28.93 грн |
| 12500+ | 28.03 грн |
| NCP2811BDTBR2G |
|
Виробник: onsemi
Description: IC AMP AB STEREO 110MW 14TSSOP
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Headphones, 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5V
Max Output Power x Channels @ Load: 110mW x 2 @ 16Ohm
Supplier Device Package: 14-TSSOP
Description: IC AMP AB STEREO 110MW 14TSSOP
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Headphones, 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5V
Max Output Power x Channels @ Load: 110mW x 2 @ 16Ohm
Supplier Device Package: 14-TSSOP
товар відсутній
| NCP349MNBGTBG |
|
Виробник: onsemi
Description: IC VOLTAGE DETECTOR OVP 6DFN
Description: IC VOLTAGE DETECTOR OVP 6DFN
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.1 грн |
| 6000+ | 22.8 грн |
| NCP5212TMNTXG |
|
Виробник: onsemi
Description: IC REG CTRLR BUCK 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 27V
Supplier Device Package: 16-QFN (4x4)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Power Good
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
Description: IC REG CTRLR BUCK 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 27V
Supplier Device Package: 16-QFN (4x4)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Power Good
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
товар відсутній
| NDD04N60Z-1G |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 4.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 600V 4.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
товар відсутній
| NDD04N60ZT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 4.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 600V 4.1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
товар відсутній
| NLSV1T34AMX1TCG |
|
Виробник: onsemi
Description: IC TRANSLATOR UNIDIR 6ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 4.5V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 6-ULLGA (1.45x1)
Description: IC TRANSLATOR UNIDIR 6ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 4.5V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 6-ULLGA (1.45x1)
товар відсутній
| NLSV1T34DFT2G |
|
Виробник: onsemi
Description: IC TRNSLTR UNIDIRECTIONAL SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 4.5V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Description: IC TRNSLTR UNIDIRECTIONAL SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 4.5V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.98 грн |
| 6000+ | 20.39 грн |
| 15000+ | 19.6 грн |
| 30000+ | 18.21 грн |
| NLX1G99AMX1TCG |
|
Виробник: onsemi
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.95x1)
Number of Circuits: 1
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.95x1)
Number of Circuits: 1
товар відсутній
| NLX1G99BMX1TCG |
|
Виробник: onsemi
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.6x1)
Number of Circuits: 1
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.6x1)
Number of Circuits: 1
товар відсутній
| NLX1G99CMX1TCG |
|
Виробник: onsemi
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.45x1)
Number of Circuits: 1
Description: IC MINIGATE MULTIFUNC 8ULLGA
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Output Type: Tri-State
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 4
Schmitt Trigger Input: Yes
Supplier Device Package: 8-ULLGA (1.45x1)
Number of Circuits: 1
товар відсутній
| NSI50010YT1G |
|
Виробник: onsemi
Description: IC CURRENT REGULATOR SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 10mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
Description: IC CURRENT REGULATOR SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 10mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
товар відсутній
| NTB6412ANG |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
товар відсутній
| NTB6412ANT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
товар відсутній
| NTD6414AN-1G |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 100V 32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товар відсутній
| NTD6414ANT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 49.54 грн |
| 5000+ | 45.91 грн |
| NTD6416ANL-1G |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 19A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 100V 19A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
товар відсутній
| NTD6416ANLT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 19A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 100V 19A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 34.89 грн |
| 5000+ | 32 грн |
| NTD6416ANT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.54 грн |
| 5000+ | 29.85 грн |
| NTP6411ANG |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 77A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 100V 77A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 72A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товар відсутній
| NTP6412ANG |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 58A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 100V 58A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.4 грн |
| 50+ | 108.88 грн |
| 100+ | 89.58 грн |
| NTTFS4800NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 5A/32A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V
Description: MOSFET N-CH 30V 5A/32A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V
товар відсутній
| NTTFS4840NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
товар відсутній
| NTTFS4932NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/79A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V
Description: MOSFET N-CH 30V 11A/79A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V
товар відсутній
| NTTFS4939NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 8.9A/52A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 15 V
Description: MOSFET N-CH 30V 8.9A/52A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1979 pF @ 15 V
товар відсутній
| NTTFS4941NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
товар відсутній
| NTTFS4943NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 8A/41A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Description: MOSFET N-CH 30V 8A/41A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
товар відсутній
| NTTFS4945NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 7.1A/34A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 890mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
Description: MOSFET N-CH 30V 7.1A/34A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 890mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V
товар відсутній
| NCP3418DR2 |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 30 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 30 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
DigiKey Programmable: Not Verified
товар відсутній
| FDPF8N50NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
Description: MOSFET N-CH 500V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.41 грн |
| FDP5N50NZ |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 3522 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.95 грн |
| 10+ | 68.7 грн |
| 100+ | 53.43 грн |
| 500+ | 42.5 грн |
| 1000+ | 34.62 грн |
| 2000+ | 32.59 грн |
| FAN7930M |
Виробник: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
товар відсутній
| FGP5N60LS |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 12V, 14A
Supplier Device Package: TO-220-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 4.3ns/36ns
Switching Energy: 38µJ (on), 130µJ (off)
Test Condition: 400V, 5A, 10Ohm, 15V
Gate Charge: 18.3 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 83 W
Description: IGBT FIELD STOP 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 12V, 14A
Supplier Device Package: TO-220-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 4.3ns/36ns
Switching Energy: 38µJ (on), 130µJ (off)
Test Condition: 400V, 5A, 10Ohm, 15V
Gate Charge: 18.3 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 83 W
товар відсутній
| FDD86102 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
товар відсутній
| FXMA108BQX |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 20DQFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-DQFN (2.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 20DQFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-DQFN (2.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 22.96 грн |
| 6000+ | 21.28 грн |
| FDD86102 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
Description: MOSFET N-CH 100V 8A/36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
на замовлення 2270 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.76 грн |
| 10+ | 88.05 грн |
| 100+ | 70.07 грн |
| 500+ | 55.64 грн |
| 1000+ | 47.21 грн |
| FXMA108BQX |
|
Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 20DQFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-DQFN (2.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 20DQFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-DQFN (2.5x4.5)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 15016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 57.02 грн |
| 10+ | 49.07 грн |
| 25+ | 46.53 грн |
| 100+ | 33.54 грн |
| 250+ | 29.64 грн |
| 500+ | 28.08 грн |
| 1000+ | 21.48 грн |
| 7WBD3306AMUTCG |
|
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
Description: IC BUS SWITCH 1 X 1:1 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
товар відсутній
| 7WBD3306USG |
|
Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
Description: IC BUS SWITCH 1 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.72 грн |
| ADP3212AMNR2G |
|
Виробник: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Up to 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (7x7)
товар відсутній
| ASM3I2669AF-06OR |
Виробник: onsemi
Description: IC FREQ MOD 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 13MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 6-TSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FREQ MOD 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 13MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 6-TSOP
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| ASM3P2107AF-08SR |
|
Виробник: onsemi
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 22MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 22MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| ASM3P2108AF-08SR |
Виробник: onsemi
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 45MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 45MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| ASM3P2180AF-08SR |
|
Виробник: onsemi
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 30MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.8V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 30MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.8V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| ASM3P2182AF-08SR |
|
Виробник: onsemi
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 210MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: CMOS, TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.7V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FREQ MOD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS, TTL
Frequency - Max: 210MHz
Type: Frequency Modulator, Spread Spectrum Clock Generator
Input: CMOS, TTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.7V ~ 3.7V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній