Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11163) > Сторінка 127 з 187

Обрати Сторінку:   [  << Попередня Сторінка ]  1 18 36 54 72 90 108 122 123 124 125 126 127 128 129 130 131 132 144 162 180 187  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
SIR108DP-T1-RE3 SIR108DP-T1-RE3 Vishay Siliconix sir108dp.pdf Description: MOSFET N-CH 100V 12.4A/45A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
на замовлення 5490 шт:
термін постачання 21-31 дні (днів)
3+153.21 грн
10+94.53 грн
100+64.27 грн
500+48.15 грн
1000+46.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISS04DN-T1-GE3 SISS04DN-T1-GE3 Vishay Siliconix siss04dn.pdf Description: MOSFET N-CH 30V 50.5A/80A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
на замовлення 7201 шт:
термін постачання 21-31 дні (днів)
3+157.16 грн
10+96.58 грн
100+65.37 грн
500+48.81 грн
1000+44.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI7172ADP-T1-RE3 SI7172ADP-T1-RE3 Vishay Siliconix si7172adp.pdf Description: MOSFET N-CH 200V PPAK SO-8
товару немає в наявності
В кошику  од. на суму  грн.
SQM40061EL_GE3 SQM40061EL_GE3 Vishay Siliconix sqm40061el.pdf Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
2+174.53 грн
10+108.52 грн
100+74.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQ1464EEH-T1_GE3 SQ1464EEH-T1_GE3 Vishay Siliconix sq1464eeh.pdf Description: MOSFET N-CH 60V 440MA SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Tc)
Rds On (Max) @ Id, Vgs: 1.41Ohm @ 2A, 1.5V
Power Dissipation (Max): 430mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7953 шт:
термін постачання 21-31 дні (днів)
10+33.17 грн
16+20.08 грн
100+11.34 грн
500+10.09 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SQJ481EP-T1_GE3 SQJ481EP-T1_GE3 Vishay Siliconix sqj481ep.pdf Description: MOSFET P-CH 80V 16A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8365 шт:
термін постачання 21-31 дні (днів)
5+71.08 грн
10+55.90 грн
100+43.47 грн
500+34.58 грн
1000+28.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SQJ504EP-T1_GE3 SQJ504EP-T1_GE3 Vishay Siliconix sqj504ep.pdf Description: MOSFET N/P-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27242 шт:
термін постачання 21-31 дні (днів)
3+146.10 грн
10+90.12 грн
100+61.11 грн
500+45.70 грн
1000+43.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHA30N60AEL-GE3 SIHA30N60AEL-GE3 Vishay Siliconix SiHA30N60AEL.pdf Description: MOSFET N-CH 600V 28A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG30N60AEL-GE3 SIHG30N60AEL-GE3 Vishay Siliconix SiHG30N60AEL.pdf Description: MOSFET N-CHAN 600V TO-247AC
товару немає в наявності
В кошику  од. на суму  грн.
SIHG73N60AEL-GE3 SIHG73N60AEL-GE3 Vishay Siliconix SIHG73N60AEL.pdf Description: MOSFET N-CH 600V 69A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 36.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6709 pF @ 100 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+885.31 грн
10+751.22 грн
В кошику  од. на суму  грн.
SIHP30N60AEL-GE3 SIHP30N60AEL-GE3 Vishay Siliconix SiHP30N60AEL.pdf Description: MOSFET N-CH 600V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SI7434ADP-T1-RE3 SI7434ADP-T1-RE3 Vishay Siliconix si7434adp.pdf Description: MOSFET N-CH 250V 3.7A/12.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 12.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3.7A, 10V
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
на замовлення 5540 шт:
термін постачання 21-31 дні (днів)
2+176.11 грн
10+109.51 грн
100+75.09 грн
500+56.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIA106DJ-T1-GE3 SIA106DJ-T1-GE3 Vishay Siliconix sia106dj.pdf Description: MOSFET N-CH 60V 10A/12A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
на замовлення 10023 шт:
термін постачання 21-31 дні (днів)
4+93.19 грн
10+56.20 грн
100+37.08 грн
500+27.09 грн
1000+24.60 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIS110DN-T1-GE3 SIS110DN-T1-GE3 Vishay Siliconix sis110dn.pdf Description: MOSFET N-CH 100V 5.2A/14.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
на замовлення 19507 шт:
термін постачання 21-31 дні (днів)
6+56.07 грн
10+37.57 грн
100+26.19 грн
500+20.50 грн
1000+18.21 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SISH617DN-T1-GE3 SISH617DN-T1-GE3 Vishay Siliconix sish617dn.pdf Description: MOSFET P-CH 30V 13.9A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 14132 шт:
термін постачання 21-31 дні (днів)
4+82.92 грн
10+59.47 грн
100+39.37 грн
500+28.83 грн
1000+26.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SISS12DN-T1-GE3 SISS12DN-T1-GE3 Vishay Siliconix siss12dn.pdf Description: MOSFET N-CH 40V 37.5A/60A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHFR1N60ATR-GE3 SIHFR1N60ATR-GE3 Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHB22N60S-GE3 SIHB22N60S-GE3 Vishay Siliconix SIHB22N60S.pdf Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SUM90220E-GE3 SUM90220E-GE3 Vishay Siliconix sum90220e.pdf Description: MOSFET N-CH 200V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
2+232.98 грн
10+146.70 грн
100+102.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQA403EJ-T1_GE3 SQA403EJ-T1_GE3 Vishay Siliconix sqa403ej.pdf Description: MOSFET P-CH 30V 10A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+15.80 грн
6000+14.26 грн
9000+13.30 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQA405EJ-T1_GE3 SQA405EJ-T1_GE3 Vishay Siliconix sqa405ej.pdf Description: MOSFET P-CH 40V 10A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+13.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQD40031EL_GE3 SQD40031EL_GE3 Vishay Siliconix sqd40031el.pdf Description: MOSFET P-CH 30V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+43.93 грн
4000+39.42 грн
6000+39.02 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQD40061EL_GE3 SQD40061EL_GE3 Vishay Siliconix sqd40061el.pdf Description: MOSFET P-CH 40V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+43.77 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJ431AEP-T1_GE3 SQJ431AEP-T1_GE3 Vishay Siliconix sqj431aep.pdf Description: MOSFET P-CH 200V 9.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+46.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ872EP-T1_GE3 SQJ872EP-T1_GE3 Vishay Siliconix sqj872ep.pdf Description: MOSFET N-CH 150V 24.5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM40016EM_GE3 SQM40016EM_GE3 Vishay Siliconix sqm40016em.pdf Description: MOSFET N-CH 40V 250A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM40022EM_GE3 SQM40022EM_GE3 Vishay Siliconix sqm40022em.pdf Description: MOSFET N-CH 40V 150A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SI2319DDS-T1-GE3 SI2319DDS-T1-GE3 Vishay Siliconix si2319dds.pdf Description: MOSFET P-CH 40V 2.7A/3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
3000+13.72 грн
6000+12.14 грн
9000+11.59 грн
15000+10.30 грн
21000+9.96 грн
30000+9.75 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 Vishay Siliconix sidr622dp.pdf Description: MOSFET N-CH 150V 64.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+84.03 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIDR626DP-T1-GE3 SIDR626DP-T1-GE3 Vishay Siliconix sidr626dp.pdf Description: MOSFET N-CH 60V 42.8A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+78.27 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR112DP-T1-RE3 SIR112DP-T1-RE3 Vishay Siliconix sir112dp.pdf Description: MOSFET N-CH 40V 37.6A/133A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRA10BDP-T1-GE3 SIRA10BDP-T1-GE3 Vishay Siliconix sira10bdp.pdf Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRA12BDP-T1-GE3 SIRA12BDP-T1-GE3 Vishay Siliconix sira12bdp.pdf Description: MOSFET N-CH 30V 27A/60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+18.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIRA62DP-T1-RE3 SIRA62DP-T1-RE3 Vishay Siliconix sira62dp.pdf Description: MOSFET N-CH 30V 51.4A/80A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SIZF906ADT-T1-GE3 SIZF906ADT-T1-GE3 Vishay Siliconix sizf906adt.pdf Description: MOSFET 2N-CH 30V 27A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
товару немає в наявності
В кошику  од. на суму  грн.
SQA403EJ-T1_GE3 SQA403EJ-T1_GE3 Vishay Siliconix sqa403ej.pdf Description: MOSFET P-CH 30V 10A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14720 шт:
термін постачання 21-31 дні (днів)
6+56.07 грн
10+40.61 грн
100+26.40 грн
500+19.01 грн
1000+17.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SQA405EJ-T1_GE3 SQA405EJ-T1_GE3 Vishay Siliconix sqa405ej.pdf Description: MOSFET P-CH 40V 10A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5997 шт:
термін постачання 21-31 дні (днів)
7+48.96 грн
10+31.18 грн
100+21.32 грн
500+15.79 грн
1000+14.39 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQD40031EL_GE3 SQD40031EL_GE3 Vishay Siliconix sqd40031el.pdf Description: MOSFET P-CH 30V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7177 шт:
термін постачання 21-31 дні (днів)
3+149.26 грн
10+91.94 грн
100+62.44 грн
500+46.72 грн
1000+44.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQD40061EL_GE3 SQD40061EL_GE3 Vishay Siliconix sqd40061el.pdf Description: MOSFET P-CH 40V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2031 шт:
термін постачання 21-31 дні (днів)
3+148.47 грн
10+91.64 грн
100+62.22 грн
500+46.56 грн
1000+44.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJ431AEP-T1_GE3 SQJ431AEP-T1_GE3 Vishay Siliconix sqj431aep.pdf Description: MOSFET P-CH 200V 9.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3331 шт:
термін постачання 21-31 дні (днів)
2+161.11 грн
10+99.70 грн
100+67.97 грн
500+51.03 грн
1000+49.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJ872EP-T1_GE3 SQJ872EP-T1_GE3 Vishay Siliconix sqj872ep.pdf Description: MOSFET N-CH 150V 24.5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2166 шт:
термін постачання 21-31 дні (днів)
3+146.89 грн
10+90.04 грн
100+60.84 грн
500+45.34 грн
1000+41.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQM40016EM_GE3 SQM40016EM_GE3 Vishay Siliconix sqm40016em.pdf Description: MOSFET N-CH 40V 250A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM40022EM_GE3 SQM40022EM_GE3 Vishay Siliconix sqm40022em.pdf Description: MOSFET N-CH 40V 150A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SIHA22N60AEL-GE3 SIHA22N60AEL-GE3 Vishay Siliconix SIHA22N60AEL.pdf Description: MOSFET N-CH 600V 21A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHB22N60AEL-GE3 SIHB22N60AEL-GE3 Vishay Siliconix SIHB22N60AEL.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG22N60AEL-GE3 SIHG22N60AEL-GE3 Vishay Siliconix SIHG22N60AEL.pdf Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG47N60AEL-GE3 SIHG47N60AEL-GE3 Vishay Siliconix SIHG47N60AEL.pdf Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
В кошику  од. на суму  грн.
SIHP22N60AEL-GE3 SIHP22N60AEL-GE3 Vishay Siliconix SIHP22N60AEL.pdf Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SI2319DDS-T1-GE3 SI2319DDS-T1-GE3 Vishay Siliconix si2319dds.pdf Description: MOSFET P-CH 40V 2.7A/3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
на замовлення 62740 шт:
термін постачання 21-31 дні (днів)
6+57.65 грн
10+34.37 грн
100+22.25 грн
500+15.99 грн
1000+14.41 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 Vishay Siliconix sidr622dp.pdf Description: MOSFET N-CH 150V 64.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
на замовлення 5965 шт:
термін постачання 21-31 дні (днів)
2+254.30 грн
10+160.39 грн
100+112.26 грн
500+92.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIDR626DP-T1-GE3 SIDR626DP-T1-GE3 Vishay Siliconix sidr626dp.pdf Description: MOSFET N-CH 60V 42.8A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
на замовлення 6622 шт:
термін постачання 21-31 дні (днів)
2+241.66 грн
10+151.87 грн
100+105.97 грн
500+86.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIR112DP-T1-RE3 SIR112DP-T1-RE3 Vishay Siliconix sir112dp.pdf Description: MOSFET N-CH 40V 37.6A/133A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRA10BDP-T1-GE3 SIRA10BDP-T1-GE3 Vishay Siliconix sira10bdp.pdf Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRA12BDP-T1-GE3 SIRA12BDP-T1-GE3 Vishay Siliconix sira12bdp.pdf Description: MOSFET N-CH 30V 27A/60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
на замовлення 6495 шт:
термін постачання 21-31 дні (днів)
5+69.50 грн
10+41.83 грн
100+30.62 грн
500+24.49 грн
1000+22.19 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIRA62DP-T1-RE3 SIRA62DP-T1-RE3 Vishay Siliconix sira62dp.pdf Description: MOSFET N-CH 30V 51.4A/80A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
3+110.56 грн
10+95.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIZF906ADT-T1-GE3 SIZF906ADT-T1-GE3 Vishay Siliconix sizf906adt.pdf Description: MOSFET 2N-CH 30V 27A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
товару немає в наявності
В кошику  од. на суму  грн.
SIR165DP-T1-GE3 SIR165DP-T1-GE3 Vishay Siliconix sir165dp.pdf Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+41.36 грн
6000+38.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISS67DN-T1-GE3 SISS67DN-T1-GE3 Vishay Siliconix siss67dn.pdf Description: MOSFET P-CH 30V 60A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SISF00DN-T1-GE3 SISF00DN-T1-GE3 Vishay Siliconix sisf00dn.pdf Description: MOSFET 2N-CH 30V 60A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+43.19 грн
6000+40.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR668ADP-T1-RE3 SIR668ADP-T1-RE3 Vishay Siliconix sir668adp.pdf Description: MOSFET N-CH 100V 93.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+69.79 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR108DP-T1-RE3 sir108dp.pdf
SIR108DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 12.4A/45A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
на замовлення 5490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.21 грн
10+94.53 грн
100+64.27 грн
500+48.15 грн
1000+46.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SISS04DN-T1-GE3 siss04dn.pdf
SISS04DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 50.5A/80A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
на замовлення 7201 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.16 грн
10+96.58 грн
100+65.37 грн
500+48.81 грн
1000+44.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SI7172ADP-T1-RE3 si7172adp.pdf
SI7172ADP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V PPAK SO-8
товару немає в наявності
В кошику  од. на суму  грн.
SQM40061EL_GE3 sqm40061el.pdf
SQM40061EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.53 грн
10+108.52 грн
100+74.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQ1464EEH-T1_GE3 sq1464eeh.pdf
SQ1464EEH-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 440MA SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Tc)
Rds On (Max) @ Id, Vgs: 1.41Ohm @ 2A, 1.5V
Power Dissipation (Max): 430mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7953 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.17 грн
16+20.08 грн
100+11.34 грн
500+10.09 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SQJ481EP-T1_GE3 sqj481ep.pdf
SQJ481EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 16A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8365 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.08 грн
10+55.90 грн
100+43.47 грн
500+34.58 грн
1000+28.17 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SQJ504EP-T1_GE3 sqj504ep.pdf
SQJ504EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 34W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27242 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.10 грн
10+90.12 грн
100+61.11 грн
500+45.70 грн
1000+43.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIHA30N60AEL-GE3 SiHA30N60AEL.pdf
SIHA30N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 28A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG30N60AEL-GE3 SiHG30N60AEL.pdf
SIHG30N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHAN 600V TO-247AC
товару немає в наявності
В кошику  од. на суму  грн.
SIHG73N60AEL-GE3 SIHG73N60AEL.pdf
SIHG73N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 69A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 36.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6709 pF @ 100 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+885.31 грн
10+751.22 грн
В кошику  од. на суму  грн.
SIHP30N60AEL-GE3 SiHP30N60AEL.pdf
SIHP30N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SI7434ADP-T1-RE3 si7434adp.pdf
SI7434ADP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 3.7A/12.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 12.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3.7A, 10V
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
на замовлення 5540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+176.11 грн
10+109.51 грн
100+75.09 грн
500+56.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIA106DJ-T1-GE3 sia106dj.pdf
SIA106DJ-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 10A/12A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
на замовлення 10023 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.19 грн
10+56.20 грн
100+37.08 грн
500+27.09 грн
1000+24.60 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SIS110DN-T1-GE3 sis110dn.pdf
SIS110DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.2A/14.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
на замовлення 19507 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.07 грн
10+37.57 грн
100+26.19 грн
500+20.50 грн
1000+18.21 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SISH617DN-T1-GE3 sish617dn.pdf
SISH617DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 13.9A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 14132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.92 грн
10+59.47 грн
100+39.37 грн
500+28.83 грн
1000+26.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SISS12DN-T1-GE3 siss12dn.pdf
SISS12DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 37.5A/60A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHFR1N60ATR-GE3 sihfr1n6.pdf
SIHFR1N60ATR-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHB22N60S-GE3 SIHB22N60S.pdf
SIHB22N60S-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SUM90220E-GE3 sum90220e.pdf
SUM90220E-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.98 грн
10+146.70 грн
100+102.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQA403EJ-T1_GE3 sqa403ej.pdf
SQA403EJ-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 10A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.80 грн
6000+14.26 грн
9000+13.30 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQA405EJ-T1_GE3 sqa405ej.pdf
SQA405EJ-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 10A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQD40031EL_GE3 sqd40031el.pdf
SQD40031EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+43.93 грн
4000+39.42 грн
6000+39.02 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQD40061EL_GE3 sqd40061el.pdf
SQD40061EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+43.77 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
SQJ431AEP-T1_GE3 sqj431aep.pdf
SQJ431AEP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 9.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+46.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SQJ872EP-T1_GE3 sqj872ep.pdf
SQJ872EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 24.5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM40016EM_GE3 sqm40016em.pdf
SQM40016EM_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 250A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM40022EM_GE3 sqm40022em.pdf
SQM40022EM_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 150A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SI2319DDS-T1-GE3 si2319dds.pdf
SI2319DDS-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 2.7A/3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.72 грн
6000+12.14 грн
9000+11.59 грн
15000+10.30 грн
21000+9.96 грн
30000+9.75 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIDR622DP-T1-GE3 sidr622dp.pdf
SIDR622DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 64.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+84.03 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIDR626DP-T1-GE3 sidr626dp.pdf
SIDR626DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 42.8A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+78.27 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR112DP-T1-RE3 sir112dp.pdf
SIR112DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRA10BDP-T1-GE3 sira10bdp.pdf
SIRA10BDP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRA12BDP-T1-GE3 sira12bdp.pdf
SIRA12BDP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 27A/60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIRA62DP-T1-RE3 sira62dp.pdf
SIRA62DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 51.4A/80A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SIZF906ADT-T1-GE3 sizf906adt.pdf
SIZF906ADT-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 27A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
товару немає в наявності
В кошику  од. на суму  грн.
SQA403EJ-T1_GE3 sqa403ej.pdf
SQA403EJ-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 10A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.07 грн
10+40.61 грн
100+26.40 грн
500+19.01 грн
1000+17.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SQA405EJ-T1_GE3 sqa405ej.pdf
SQA405EJ-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 10A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.96 грн
10+31.18 грн
100+21.32 грн
500+15.79 грн
1000+14.39 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SQD40031EL_GE3 sqd40031el.pdf
SQD40031EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7177 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.26 грн
10+91.94 грн
100+62.44 грн
500+46.72 грн
1000+44.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQD40061EL_GE3 sqd40061el.pdf
SQD40061EL_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 100A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2031 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.47 грн
10+91.64 грн
100+62.22 грн
500+46.56 грн
1000+44.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQJ431AEP-T1_GE3 sqj431aep.pdf
SQJ431AEP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 9.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+161.11 грн
10+99.70 грн
100+67.97 грн
500+51.03 грн
1000+49.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SQJ872EP-T1_GE3 sqj872ep.pdf
SQJ872EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 24.5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.89 грн
10+90.04 грн
100+60.84 грн
500+45.34 грн
1000+41.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SQM40016EM_GE3 sqm40016em.pdf
SQM40016EM_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 250A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SQM40022EM_GE3 sqm40022em.pdf
SQM40022EM_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 150A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SIHA22N60AEL-GE3 SIHA22N60AEL.pdf
SIHA22N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHB22N60AEL-GE3 SIHB22N60AEL.pdf
SIHB22N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG22N60AEL-GE3 SIHG22N60AEL.pdf
SIHG22N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SIHG47N60AEL-GE3 SIHG47N60AEL.pdf
SIHG47N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
В кошику  од. на суму  грн.
SIHP22N60AEL-GE3 SIHP22N60AEL.pdf
SIHP22N60AEL-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SI2319DDS-T1-GE3 si2319dds.pdf
SI2319DDS-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 2.7A/3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
на замовлення 62740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.65 грн
10+34.37 грн
100+22.25 грн
500+15.99 грн
1000+14.41 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SIDR622DP-T1-GE3 sidr622dp.pdf
SIDR622DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 64.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56.7A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
на замовлення 5965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+254.30 грн
10+160.39 грн
100+112.26 грн
500+92.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIDR626DP-T1-GE3 sidr626dp.pdf
SIDR626DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 42.8A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
на замовлення 6622 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+241.66 грн
10+151.87 грн
100+105.97 грн
500+86.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIR112DP-T1-RE3 sir112dp.pdf
SIR112DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRA10BDP-T1-GE3 sira10bdp.pdf
SIRA10BDP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SIRA12BDP-T1-GE3 sira12bdp.pdf
SIRA12BDP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 27A/60A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
на замовлення 6495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.50 грн
10+41.83 грн
100+30.62 грн
500+24.49 грн
1000+22.19 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SIRA62DP-T1-RE3 sira62dp.pdf
SIRA62DP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 51.4A/80A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+110.56 грн
10+95.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SIZF906ADT-T1-GE3 sizf906adt.pdf
SIZF906ADT-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 27A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
товару немає в наявності
В кошику  од. на суму  грн.
SIR165DP-T1-GE3 sir165dp.pdf
SIR165DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+41.36 грн
6000+38.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SISS67DN-T1-GE3 siss67dn.pdf
SISS67DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
SISF00DN-T1-GE3 sisf00dn.pdf
SISF00DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+43.19 грн
6000+40.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIR668ADP-T1-RE3 sir668adp.pdf
SIR668ADP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 93.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+69.79 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 18 36 54 72 90 108 122 123 124 125 126 127 128 129 130 131 132 144 162 180 187  [ Наступна Сторінка >> ]