Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117829) > Сторінка 1958 з 1964

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BTS4141N BTS4141N INFINEON TECHNOLOGIES BTS4141N.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
на замовлення 2539 шт:
термін постачання 14-30 дні (днів)
2+248.55 грн
10+153.59 грн
100+120.85 грн
250+108.27 грн
500+99.03 грн
1000+94.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS4880R BTS4880R INFINEON TECHNOLOGIES BTS4880R.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
1+891.17 грн
10+656.30 грн
100+539.65 грн
500+518.67 грн
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BTS452T BTS452T INFINEON TECHNOLOGIES BTS452T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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BTS4175SGA BTS4175SGA INFINEON TECHNOLOGIES BTS4175SGA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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BTS436L2GATMA1 INFINEON TECHNOLOGIES Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Power dissipation: 75W
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
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SPD06N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
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IRFR1205TRPBF IRFR1205TRPBF INFINEON TECHNOLOGIES irfr1205pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Power dissipation: 107W
Drain-source voltage: 55V
Type of transistor: N-MOSFET
на замовлення 2563 шт:
термін постачання 14-30 дні (днів)
9+54.23 грн
12+35.58 грн
50+29.71 грн
100+27.70 грн
500+23.92 грн
1000+22.83 грн
2000+21.49 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRFR120ZTRPBF IRFR120ZTRPBF INFINEON TECHNOLOGIES irfr120zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 8.7A
Kind of channel: enhancement
Power dissipation: 35W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
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BGS14MPA9E6327XTSA1 INFINEON TECHNOLOGIES BGS14MPA9E6327.pdf Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
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IRS21867STRPBF IRS21867STRPBF INFINEON TECHNOLOGIES IRS21867SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
на замовлення 1543 шт:
термін постачання 14-30 дні (днів)
4+131.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2186STRPBF IRS2186STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
на замовлення 1327 шт:
термін постачання 14-30 дні (днів)
4+127.44 грн
10+87.28 грн
25+83.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2110SPBF IRS2110SPBF INFINEON TECHNOLOGIES irs2110.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
2+255.78 грн
10+185.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS21864SPBF IRS21864SPBF INFINEON TECHNOLOGIES irs2186pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
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IRS2118PBF IRS2118PBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
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IRS2181STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
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IRS2109STRPBF INFINEON TECHNOLOGIES IRSDS11365-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS21864STRPBF INFINEON TECHNOLOGIES irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS21814STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
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IRS2101STRPBF INFINEON TECHNOLOGIES infineon-irs2101-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS2113MTRPBF INFINEON TECHNOLOGIES irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
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IRS21271STRPBF INFINEON TECHNOLOGIES IRS212XXSTRPBf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
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IRS2168DSTRPBF IRS2168DSTRPBF INFINEON TECHNOLOGIES irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
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IRS2183STRPBF INFINEON TECHNOLOGIES irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
2500+93.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2117STRPBF INFINEON TECHNOLOGIES irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; SOIC8; 290mA; Ch: 1; MOSFET; Iout max: 290mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: SOIC8
Output current: 0.29A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 0.625W
Pulse fall time: 35ns
Impulse rise time: 75ns
Integrated circuit features: MOSFET
Maximum output current: 290mA
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
2500+36.79 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES irf7205pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 4115 шт:
термін постачання 14-30 дні (днів)
8+62.36 грн
10+43.05 грн
50+31.56 грн
100+28.03 грн
250+24.51 грн
500+22.24 грн
1000+20.06 грн
2000+18.38 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES IRF7201TRPBF.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES irf7105pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 2044 шт:
термін постачання 14-30 дні (днів)
8+56.94 грн
11+40.96 грн
50+28.62 грн
100+24.34 грн
250+19.64 грн
500+17.20 грн
1000+16.11 грн
2000+15.19 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES irf7101pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES irf7104pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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BC858CE6327 BC858CE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
10+41.96 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IR2109STRPBF IR2109STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
на замовлення 3606 шт:
термін постачання 14-30 дні (днів)
6+73.86 грн
7+65.46 грн
10+61.27 грн
25+59.59 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 1379 шт:
термін постачання 14-30 дні (днів)
4+125.63 грн
10+88.12 грн
25+80.57 грн
50+76.37 грн
100+72.18 грн
250+69.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IR21094SPBF IR21094SPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
4+118.34 грн
10+93.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IR21084STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
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TLE6232GPAUMA2 TLE6232GPAUMA2 INFINEON TECHNOLOGIES TLE6232GP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Turn-off time: 10µs
Turn-on time: 10µs
Output current: 0.55...1.1A
Kind of integrated circuit: low-side
Kind of output: N-Channel
Technology: FLEX
Number of channels: 6
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CY8C4245AXI-483 CY8C4245AXI-483 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4125AXI-483 CY8C4125AXI-483 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C27543-24AXI CY8C27543-24AXI INFINEON TECHNOLOGIES CY8C27x43_38-12012.pdf description Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 40
Supply voltage: 3...5.25V DC
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
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CY8C4124AXI-443 CY8C4124AXI-443 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4125AXI-473 CY8C4125AXI-473 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4125AXQ-483 CY8C4125AXQ-483 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4147AXI-S453 CY8C4147AXI-S453 INFINEON TECHNOLOGIES CY8C4147AXI-S453.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 16kB SRAM; 128kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4245AXI-473 CY8C4245AXI-473 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4245AZI-M443 CY8C4245AZI-M443 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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IRF4104PBF IRF4104PBF INFINEON TECHNOLOGIES irf4104.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
4+115.69 грн
10+74.69 грн
50+63.78 грн
100+58.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP041N04NGXKSA1 IPP041N04NGXKSA1 INFINEON TECHNOLOGIES IPP041N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
на замовлення 181 шт:
термін постачання 14-30 дні (днів)
5+107.56 грн
10+56.48 грн
25+50.36 грн
50+46.16 грн
100+42.38 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF40H233XTMA1 INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIRF4104STRL AUIRF4104STRL INFINEON TECHNOLOGIES auirf4104.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 INFINEON TECHNOLOGIES BAS3007ARPPE6327.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. forward impulse current: 5A
Load current: 0.9A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Electrical mounting: SMT
на замовлення 2170 шт:
термін постачання 14-30 дні (днів)
12+37.96 грн
15+28.87 грн
17+25.77 грн
100+18.63 грн
500+15.86 грн
1000+14.52 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS3005B02VH6327XTSA1 BAS3005B02VH6327XTSA1 INFINEON TECHNOLOGIES BAS3005B02VH6327XT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Type of diode: Schottky switching
на замовлення 1520 шт:
термін постачання 14-30 дні (днів)
36+12.65 грн
41+10.24 грн
44+9.74 грн
100+7.89 грн
500+6.71 грн
1000+6.38 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
S29AL008J70TFI010 S29AL008J70TFI010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
на замовлення 1049 шт:
термін постачання 14-30 дні (днів)
2+231.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TT215N22KOF TT215N22KOF INFINEON TECHNOLOGIES TT215N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IRLHS6276TRPBF IRLHS6276TRPBF INFINEON TECHNOLOGIES irlhs6276pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
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TLE8366EVXUMA1 INFINEON TECHNOLOGIES Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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FF300R12KS4 FF300R12KS4 INFINEON TECHNOLOGIES FF300R12KS4-dte.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
1+17814.36 грн
3+14792.04 грн
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CY8C24994-24LTXI CY8C24994-24LTXI INFINEON TECHNOLOGIES CY8C24794-24LTXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART; USB 2.0
Case: QFN68
Mounting: SMD
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 56
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
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TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES TT260N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES IPD90N04S404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 71W
Case: PG-TO252-3-313
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: reel
Technology: OptiMOS™ T2
Pulsed drain current: 360A
на замовлення 2257 шт:
термін постачання 14-30 дні (днів)
5+99.42 грн
6+72.18 грн
10+62.94 грн
25+57.07 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD90N04S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Application: automotive industry
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BTS4141N description BTS4141N.pdf
BTS4141N
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
на замовлення 2539 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+248.55 грн
10+153.59 грн
100+120.85 грн
250+108.27 грн
500+99.03 грн
1000+94.84 грн
Мінімальне замовлення: 2
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BTS4880R BTS4880R.pdf
BTS4880R
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
на замовлення 763 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+891.17 грн
10+656.30 грн
100+539.65 грн
500+518.67 грн
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BTS452T BTS452T.pdf
BTS452T
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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BTS4175SGA BTS4175SGA.pdf
BTS4175SGA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
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BTS436L2GATMA1 Infineon-BTS436L2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9aff33e35e5
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Power dissipation: 75W
Integrated circuit features: thermal protection
Operating temperature: -40...150°C
Application: automotive industry
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SPD06N80C3ATMA1 Infineon-SPD06N80C3-DS-v02_92-en.pdf?fileId=db3a30433f1b26e8013f1dffc5130173
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
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IRFR1205TRPBF irfr1205pbf.pdf
IRFR1205TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 37A
Kind of channel: enhancement
Power dissipation: 107W
Drain-source voltage: 55V
Type of transistor: N-MOSFET
на замовлення 2563 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+54.23 грн
12+35.58 грн
50+29.71 грн
100+27.70 грн
500+23.92 грн
1000+22.83 грн
2000+21.49 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRFR120ZTRPBF irfr120zpbf.pdf
IRFR120ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Drain current: 8.7A
Kind of channel: enhancement
Power dissipation: 35W
Drain-source voltage: 100V
Type of transistor: N-MOSFET
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BGS14MPA9E6327XTSA1 BGS14MPA9E6327.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
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IRS21867STRPBF IRS21867SPBF.pdf
IRS21867STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
на замовлення 1543 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+131.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2186STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS2186STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 188ns
Turn-on time: 192ns
Power: 625mW
на замовлення 1327 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+127.44 грн
10+87.28 грн
25+83.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2110SPBF description irs2110.pdf
IRS2110SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+255.78 грн
10+185.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS21864SPBF irs2186pbf.pdf
IRS21864SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
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IRS2118PBF irs2117pbf.pdf
IRS2118PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
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IRS2181STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
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IRS2109STRPBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS21864STRPBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS21814STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
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IRS2101STRPBF infineon-irs2101-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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IRS2118SPBF irs2117pbf.pdf
IRS2118SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
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IRS21271STRPBF IRS212XXSTRPBf.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
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IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+93.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRS2117STRPBF irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; SOIC8; 290mA; Ch: 1; MOSFET; Iout max: 290mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: SOIC8
Output current: 0.29A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 0.625W
Pulse fall time: 35ns
Impulse rise time: 75ns
Integrated circuit features: MOSFET
Maximum output current: 290mA
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+36.79 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRF7205TRPBF description irf7205pbf.pdf
IRF7205TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 4115 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+62.36 грн
10+43.05 грн
50+31.56 грн
100+28.03 грн
250+24.51 грн
500+22.24 грн
1000+20.06 грн
2000+18.38 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF7201TRPBF description IRF7201TRPBF.pdf
IRF7201TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF7105TRPBF description irf7105pbf.pdf
IRF7105TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 2044 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+56.94 грн
11+40.96 грн
50+28.62 грн
100+24.34 грн
250+19.64 грн
500+17.20 грн
1000+16.11 грн
2000+15.19 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF7101TRPBF irf7101pbf.pdf
IRF7101TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF7104TRPBF description irf7104pbf.pdf
IRF7104TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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BC858CE6327 BC858CE6327.pdf
BC858CE6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+41.96 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IR2109STRPBF IR21094SPBF.pdf
IR2109STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
на замовлення 3606 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+73.86 грн
7+65.46 грн
10+61.27 грн
25+59.59 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IR21094STRPBF IR21094SPBF.pdf
IR21094STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 1379 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+125.63 грн
10+88.12 грн
25+80.57 грн
50+76.37 грн
100+72.18 грн
250+69.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IR21094SPBF IR21094SPBF.pdf
IR21094SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+118.34 грн
10+93.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IR21084STRPBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
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TLE6232GPAUMA2 TLE6232GP.pdf
TLE6232GPAUMA2
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Turn-off time: 10µs
Turn-on time: 10µs
Output current: 0.55...1.1A
Kind of integrated circuit: low-side
Kind of output: N-Channel
Technology: FLEX
Number of channels: 6
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CY8C4245AXI-483 CY8C4244LQI-443.pdf
CY8C4245AXI-483
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4125AXI-483 CY8C4124AXI-443.pdf
CY8C4125AXI-483
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C27543-24AXI description CY8C27x43_38-12012.pdf
CY8C27543-24AXI
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 40
Supply voltage: 3...5.25V DC
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
товару немає в наявності
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CY8C4124AXI-443 CY8C4124AXI-443.pdf
CY8C4124AXI-443
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4125AXI-473 CY8C4124AXI-443.pdf
CY8C4125AXI-473
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4125AXQ-483 CY8C4124AXI-443.pdf
CY8C4125AXQ-483
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4147AXI-S453 CY8C4147AXI-S453.pdf
CY8C4147AXI-S453
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 16kB SRAM; 128kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4245AXI-473 CY8C4244LQI-443.pdf
CY8C4245AXI-473
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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CY8C4245AZI-M443 CY8C4245AZI-M443.pdf
CY8C4245AZI-M443
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
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IRF4104PBF description irf4104.pdf
IRF4104PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+115.69 грн
10+74.69 грн
50+63.78 грн
100+58.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP041N04NGXKSA1 IPP041N04NG-DTE.pdf
IPP041N04NGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
на замовлення 181 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+107.56 грн
10+56.48 грн
25+50.36 грн
50+46.16 грн
100+42.38 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIRF4104STRL auirf4104.pdf
AUIRF4104STRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327.pdf
BAS3007ARPPE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. forward impulse current: 5A
Load current: 0.9A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Electrical mounting: SMT
на замовлення 2170 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+37.96 грн
15+28.87 грн
17+25.77 грн
100+18.63 грн
500+15.86 грн
1000+14.52 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS3005B02VH6327XTSA1 BAS3005B02VH6327XT.pdf
BAS3005B02VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Type of diode: Schottky switching
на замовлення 1520 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.65 грн
41+10.24 грн
44+9.74 грн
100+7.89 грн
500+6.71 грн
1000+6.38 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
S29AL008J70TFI010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFI010
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
на замовлення 1049 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+231.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TT215N22KOF TT215N22KOF.pdf
TT215N22KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IRLHS6276TRPBF irlhs6276pbf.pdf
IRLHS6276TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
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TLE8366EVXUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
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FF300R12KS4 FF300R12KS4-dte.pdf
FF300R12KS4
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+17814.36 грн
3+14792.04 грн
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CY8C24994-24LTXI CY8C24794-24LTXI.pdf
CY8C24994-24LTXI
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART; USB 2.0
Case: QFN68
Mounting: SMD
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 56
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
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TT260N22KOFHOSA1 TT260N22KOF.pdf
TT260N22KOFHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPD90N04S404ATMA1 IPD90N04S404.pdf
IPD90N04S404ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 71W
Case: PG-TO252-3-313
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: reel
Technology: OptiMOS™ T2
Pulsed drain current: 360A
на замовлення 2257 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+99.42 грн
6+72.18 грн
10+62.94 грн
25+57.07 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD90N04S4L04ATMA1 Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Application: automotive industry
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