Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124748) > Сторінка 2059 з 2080
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S29GL064S80DHIV20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | |||||||||||
| S29GL064S80FHIV10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | |||||||||||
| S29GL064S80FHIV20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||
| S29GL064S80TFIV10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 91 шт В кошику од. на суму грн. | |||||||||||
| S29GL064S80TFIV20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 910 шт В кошику од. на суму грн. | |||||||||||
| S29GL064S80TFIV60 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 192 шт В кошику од. на суму грн. | |||||||||||
| S29GL064S80TFIV63 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
|
IPP052NE7N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 150W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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IKD10N60RC2ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; Field Stop; 600V; 18.8A; 79W; DPAK Type of transistor: IGBT Technology: Field Stop; Trench Power dissipation: 79W Case: DPAK Mounting: SMD Turn-off time: 250ns Gate-emitter voltage: ±20V Collector current: 18.8A Collector-emitter voltage: 600V Gate charge: 48nC Pulsed collector current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IRFR3709ZTRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
|
IPP089N15NM6AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 88A; 158W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 88A Power dissipation: 158W Case: TO220-3 On-state resistance: 8.9mΩ Mounting: THT Gate charge: 29nC Kind of channel: enhancement |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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| S29PL032J60BFI070 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 60ns; FBGA48; parallel Case: FBGA48 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C Access time: 60ns Operating voltage: 2.7...3.6V Memory: 32Mb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of package: in-tray Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | |||||||||||
| S29PL064J60BFA070 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel Case: FBGA48 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C Access time: 60ns Operating voltage: 2.7...3.6V Memory: 64Mb FLASH Application: automotive Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of package: in-tray Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S29PL064J60BFA073 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel Case: FBGA48 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C Access time: 60ns Operating voltage: 2.7...3.6V Memory: 64Mb FLASH Application: automotive Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of package: reel; tape Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S29PL064J60BFI070 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel Case: FBGA48 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C Access time: 60ns Operating voltage: 2.7...3.6V Memory: 64Mb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of package: in-tray Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | |||||||||||
| S29PL064J60BFW073 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel Case: FBGA48 Mounting: SMD Kind of interface: parallel Operating temperature: -25...85°C Access time: 60ns Operating voltage: 2.7...3.6V Memory: 64Mb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of package: reel; tape Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S29PL127J60BFI040 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel Case: FBGA80 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C Access time: 60ns Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of package: in-tray Kind of memory: NOR |
товару немає в наявності |
Мінімальне замовлення: 2100 шт В кошику од. на суму грн. | |||||||||||
| TT280N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 280A; BG-PB50SB-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 280A Case: BG-PB50SB-1 Max. forward voltage: 1.77V Max. forward impulse current: 9kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TT280N18SOF | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.8kV; 280A; BG-PB50SB-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 280A Case: BG-PB50SB-1 Max. forward voltage: 1.77V Max. forward impulse current: 9kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BSC146N10LS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||
|
IRF100B202 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Power dissipation: 221W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Gate charge: 77nC Kind of channel: enhancement Kind of package: tube |
на замовлення 146 шт: термін постачання 14-30 дні (днів) |
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IRF100S201 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 136A Pulsed drain current: 690A Power dissipation: 441W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 255nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRF100P218AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Case: TO220AB Mounting: THT Kind of channel: enhancement Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPD95R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 5.5A Power dissipation: 73W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 23nC Kind of package: reel Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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IPA95R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 5.5A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPA95R450P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 8.6A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 95 шт: термін постачання 14-30 дні (днів) |
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| BAS16SH6727XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.2A; 4ns; Ufmax: 1.25V; Ifsm: 4.5A Application: automotive industry Mounting: SMD Type of diode: switching Semiconductor structure: triple Reverse recovery time: 4ns Leakage current: 1µA Load current: 0.2A Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Max. off-state voltage: 80V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| BTS3134DATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 Technology: HITFET® Operating temperature: -40...150°C Output voltage: 42V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
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IDH06G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 30A Leakage current: 46µA Power dissipation: 54W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
на замовлення 99 шт: термін постачання 14-30 дні (днів) |
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CY8C4125AZI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; TQFP64; 4kBSRAM,32kBFLASH Operating temperature: -40...85°C Type of integrated circuit: PSoC microcontroller Case: TQFP64 Integrated circuit features: CapSense; LCD controller Mounting: SMD Kind of core: 32-bit Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 51 Memory: 4kB SRAM; 32kB FLASH Clock frequency: 24MHz Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C4246AXI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH Operating temperature: -40...85°C Type of integrated circuit: PSoC microcontroller Case: TQFP64 Integrated circuit features: CapSense; LCD controller Mounting: SMD Kind of core: 32-bit Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 51 Memory: 8kB SRAM; 64kB FLASH Clock frequency: 48MHz Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CY8C4246AZI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH Operating temperature: -40...85°C Type of integrated circuit: PSoC microcontroller Case: TQFP64 Integrated circuit features: CapSense; LCD controller Mounting: SMD Kind of core: 32-bit Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 51 Memory: 8kB SRAM; 64kB FLASH Clock frequency: 48MHz Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
| IPD047N03LF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252 Polarisation: unipolar On-state resistance: 4.7mΩ Drain-source voltage: 30V Drain current: 71A Power dissipation: 65W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| BCR421UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 1.4...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TLE4906L | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; unipolar; 150Gs; Usup: 2.7÷18VDC; 20mA Type of sensor: Hall Supply voltage: 2.7...18V DC Range of detectable magnetic field: 150Gs Operating temperature: -40...150°C Kind of sensor: unipolar Switched current: 20mA |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||
| TLE4906LHALA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall Type of sensor: Hall |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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| S27KS0642GABHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S25FL256LAGBHA020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Interface: QUAD SPI Kind of interface: serial Application: automotive Operating voltage: 2.7...3.6V Operating frequency: 133MHz |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | |||||||||||
| S25FL256LAGBHA023 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Interface: QUAD SPI Kind of interface: serial Application: automotive Operating voltage: 2.7...3.6V Operating frequency: 133MHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S26KS128SDPBHA020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Interface: HyperBus Kind of interface: serial Application: automotive Operating voltage: 1.7...1.95V Operating frequency: 166MHz |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S26KS256SDPBHA020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Application: automotive Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S26KS256SDPBHA023 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Application: automotive Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S26KS512SDPBHA020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Interface: HyperBus Kind of interface: serial Application: automotive Operating voltage: 1.7...1.95V Operating frequency: 166MHz |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S27KL0643DPBHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | |||||||||||
| S27KL0643DPBHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S27KS0642GABHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S27KS0643GABHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S29GL512S10DHA023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 100ns Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Output voltage: 2.7...3.6V DC Application: automotive |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. | |||||||||||
| S70KL1282DPBHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | |||||||||||
| S70KL1282DPBHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S70KS1282GABHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S80KS2563GABHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | |||||||||||
| S80KS5122GABHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | |||||||||||
|
IPD60R600P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Type of transistor: N-MOSFET On-state resistance: 0.6Ω Mounting: SMD Pulsed drain current: 16A Power dissipation: 30W Gate charge: 9nC Polarisation: unipolar Version: ESD Technology: CoolMOS™ P7 Drain current: 4A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±20V Case: PG-TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
BCW66KFE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 170MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||
| BCW66KGE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Case: SC59 Current gain: 160 Mounting: SMD Frequency: 170MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
|
IRFSL3207ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| IPD25N06S4L30ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 92A Power dissipation: 29W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 30mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T2 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
|
BTS3125EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.25Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| KP229E3111XTMA1 | INFINEON TECHNOLOGIES |
Category: Pressure SensorsDescription: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT Mounting: SMT Type of sensor: pressure Operating temperature: -40...140°C Supply voltage: 4.5...5.5V DC Pressure measuring range: 20...300kPa Operation mode: absolute Output configuration: analogue voltage |
товару немає в наявності |
В кошику од. на суму грн. |
| S29GL064S80DHIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 520 шт
В кошику
од. на суму грн.
| S29GL064S80FHIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| S29GL064S80FHIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| S29GL064S80TFIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 91 шт
В кошику
од. на суму грн.
| S29GL064S80TFIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 910 шт
В кошику
од. на суму грн.
| S29GL064S80TFIV60 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 192 шт
В кошику
од. на суму грн.
| S29GL064S80TFIV63 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IPP052NE7N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.69 грн |
| 10+ | 82.08 грн |
| IKD10N60RC2ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 18.8A; 79W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 18.8A
Collector-emitter voltage: 600V
Gate charge: 48nC
Pulsed collector current: 30A
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 18.8A; 79W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Turn-off time: 250ns
Gate-emitter voltage: ±20V
Collector current: 18.8A
Collector-emitter voltage: 600V
Gate charge: 48nC
Pulsed collector current: 30A
товару немає в наявності
В кошику
од. на суму грн.
| IRFR3709ZTRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPP089N15NM6AKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 158W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 158W
Case: TO220-3
On-state resistance: 8.9mΩ
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 158W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 158W
Case: TO220-3
On-state resistance: 8.9mΩ
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
на замовлення 174 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.15 грн |
| 10+ | 107.79 грн |
| 50+ | 87.06 грн |
| 100+ | 78.77 грн |
| S29PL032J60BFI070 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 32Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 32MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 32Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| S29PL064J60BFA070 |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S29PL064J60BFA073 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| S29PL064J60BFI070 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| S29PL064J60BFW073 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -25...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -25...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S29PL127J60BFI040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Case: FBGA80
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Case: FBGA80
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
товару немає в наявності
Мінімальне замовлення: 2100 шт
В кошику
од. на суму грн.
| TT280N16SOFHPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 280A; BG-PB50SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 280A; BG-PB50SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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| TT280N18SOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 280A; BG-PB50SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 280A; BG-PB50SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику
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| BSC146N10LS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IRF100B202 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 146 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 141.08 грн |
| 5+ | 102.81 грн |
| 10+ | 91.20 грн |
| 50+ | 68.82 грн |
| 100+ | 61.35 грн |
| IRF100S201 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
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В кошику
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| IRF100P218AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
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| IPD95R750P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPA95R750P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| IPA95R450P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 200.90 грн |
| 5+ | 140.95 грн |
| 10+ | 126.86 грн |
| BAS16SH6727XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.2A; 4ns; Ufmax: 1.25V; Ifsm: 4.5A
Application: automotive industry
Mounting: SMD
Type of diode: switching
Semiconductor structure: triple
Reverse recovery time: 4ns
Leakage current: 1µA
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Max. off-state voltage: 80V
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.2A; 4ns; Ufmax: 1.25V; Ifsm: 4.5A
Application: automotive industry
Mounting: SMD
Type of diode: switching
Semiconductor structure: triple
Reverse recovery time: 4ns
Leakage current: 1µA
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Max. off-state voltage: 80V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BTS3134DATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 42V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IDH06G65C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 46µA
Power dissipation: 54W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 46µA
Power dissipation: 54W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 183.94 грн |
| 50+ | 131.83 грн |
| CY8C4125AZI-M445 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP64; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP64; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
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| CY8C4246AXI-M445 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
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од. на суму грн.
| CY8C4246AZI-M445 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
товару немає в наявності
Мінімальне замовлення: 1600 шт
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од. на суму грн.
| IPD047N03LF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BCR421UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 1.4...40V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 1.4...40V DC
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| TLE4906L |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; 150Gs; Usup: 2.7÷18VDC; 20mA
Type of sensor: Hall
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: 150Gs
Operating temperature: -40...150°C
Kind of sensor: unipolar
Switched current: 20mA
Category: Hall Sensors
Description: Sensor: Hall; unipolar; 150Gs; Usup: 2.7÷18VDC; 20mA
Type of sensor: Hall
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: 150Gs
Operating temperature: -40...150°C
Kind of sensor: unipolar
Switched current: 20mA
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| TLE4906LHALA1 |
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на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 40.45 грн |
| S27KS0642GABHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 1690 шт
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од. на суму грн.
| S25FL256LAGBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
товару немає в наявності
Мінімальне замовлення: 338 шт
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од. на суму грн.
| S25FL256LAGBHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26KS128SDPBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S26KS256SDPBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S26KS256SDPBHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26KS512SDPBHA020 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S27KL0643DPBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| S27KL0643DPBHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S27KS0642GABHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S27KS0643GABHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S29GL512S10DHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 2.7...3.6V DC
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 2.7...3.6V DC
Application: automotive
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику
од. на суму грн.
| S70KL1282DPBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| S70KL1282DPBHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S70KS1282GABHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S80KS2563GABHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 676 шт
В кошику
од. на суму грн.
| S80KS5122GABHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 676 шт
В кошику
од. на суму грн.
| IPD60R600P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 30W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 30W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
товару немає в наявності
В кошику
од. на суму грн.
| BCW66KFE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| BCW66KGE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRFSL3207ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 302.69 грн |
| 10+ | 205.62 грн |
| 25+ | 170.80 грн |
| 50+ | 149.24 грн |
| IPD25N06S4L30ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BTS3125EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товару немає в наявності
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од. на суму грн.
| KP229E3111XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Pressure Sensors
Description: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT
Mounting: SMT
Type of sensor: pressure
Operating temperature: -40...140°C
Supply voltage: 4.5...5.5V DC
Pressure measuring range: 20...300kPa
Operation mode: absolute
Output configuration: analogue voltage
Category: Pressure Sensors
Description: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT
Mounting: SMT
Type of sensor: pressure
Operating temperature: -40...140°C
Supply voltage: 4.5...5.5V DC
Pressure measuring range: 20...300kPa
Operation mode: absolute
Output configuration: analogue voltage
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