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IXFH28N60P3 IXFH28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
1+605.32 грн
5+481.67 грн
10+427.49 грн
В кошику  од. на суму  грн.
IXFB82N60P IXFB82N60P IXYS IXFB82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
1+2013.79 грн
5+1676.09 грн
25+1651.54 грн
В кошику  од. на суму  грн.
IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 266 шт:
термін постачання 14-30 дні (днів)
1+869.69 грн
6+606.10 грн
10+572.24 грн
В кошику  од. на суму  грн.
IXFN180N25T IXFN180N25T IXYS IXFN180N25T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 364nC
On-state resistance: 12.9mΩ
Technology: GigaMOS™
Drain current: 168A
Pulsed drain current: 500A
Drain-source voltage: 250V
Power dissipation: 900W
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
1+1955.44 грн
5+1565.20 грн
В кошику  од. на суму  грн.
IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Pulsed drain current: 48A
Power dissipation: 446W
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IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Pulsed drain current: 48A
Power dissipation: 446W
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IXKH47N60C IXKH47N60C IXYS IXKH47N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
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IXTH90P10P IXTH90P10P IXYS IXT_90P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
1+947.18 грн
5+750.01 грн
10+678.06 грн
30+580.71 грн
60+539.23 грн
В кошику  од. на суму  грн.
IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
на замовлення 308 шт:
термін постачання 14-30 дні (днів)
2+445.79 грн
5+338.60 грн
10+301.36 грн
30+264.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
1+545.15 грн
10+400.40 грн
30+323.37 грн
В кошику  од. на суму  грн.
IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTT40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTY14N60X2 IXTY14N60X2 IXYS ixty2n65x2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
на замовлення 342 шт:
термін постачання 14-30 дні (днів)
2+350.98 грн
10+251.41 грн
25+220.94 грн
70+216.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T IXYS IXFN420N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.3mΩ
Technology: GigaMOS™; HiPerFET™
Drain current: 420A
Pulsed drain current: 1kA
Drain-source voltage: 100V
Power dissipation: 1.07kW
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+2269.95 грн
5+1863.17 грн
В кошику  од. на суму  грн.
IXTH24N50L IXTH24N50L IXYS IXTH24N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ460P2 IXTQ460P2 IXYS IXTQ460P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: Polar2™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of channel: enhancement
Mounting: THT
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
2+435.76 грн
5+357.23 грн
10+322.52 грн
30+286.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN210N30X3 IXFN210N30X3 IXYS IXFN210N30X3.pdf 300VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 4.6mΩ
Technology: HiPerFET™; X3-Class
Drain current: 210A
Pulsed drain current: 650A
Drain-source voltage: 300V
Power dissipation: 695W
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+3555.35 грн
В кошику  од. на суму  грн.
LF2304NTR LF2304NTR IXYS LF2304NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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IXYH30N65C3 IXYH30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXTH64N65X IXTH64N65X IXYS IXTH64N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
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IXFN140N30P IXFN140N30P IXYS IXFN140N30P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Technology: HiPerFET™; Polar™
Drain current: 110A
Pulsed drain current: 300A
Drain-source voltage: 300V
Power dissipation: 700W
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+2679.27 грн
5+2138.29 грн
В кошику  од. на суму  грн.
IXFN132N50P3 IXFN132N50P3 IXYS IXFN132N50P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 250ns
Gate charge: 250nC
On-state resistance: 39mΩ
Technology: HiPerFET™; Polar™
Drain current: 112A
Pulsed drain current: 330A
Drain-source voltage: 500V
Power dissipation: 1.5kW
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
1+3145.12 грн
5+2741.00 грн
10+2698.68 грн
В кошику  од. на суму  грн.
IXFN210N20P IXFN210N20P IXYS IXFN210N20P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 255nC
On-state resistance: 10.5mΩ
Technology: HiPerFET™; Polar™
Drain current: 188A
Pulsed drain current: 600A
Drain-source voltage: 200V
Power dissipation: 1.07kW
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
1+2991.96 грн
10+2544.61 грн
В кошику  од. на суму  грн.
IXFN44N100P IXFN44N100P IXYS IXFN44N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 0.35µC
On-state resistance: 0.22Ω
Technology: HiPerFET™; Polar™
Drain current: 37A
Pulsed drain current: 110A
Drain-source voltage: 1kV
Power dissipation: 890W
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
1+2778.64 грн
В кошику  од. на суму  грн.
IXFH15N100P IXFH15N100P IXYS IXFH15N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
1+890.66 грн
3+739.00 грн
10+653.51 грн
30+586.63 грн
В кошику  од. на суму  грн.
IXFA5N100P IXFA5N100P IXYS IXFA(H,P)5N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
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IXTP05N100P IXTP05N100P IXYS IXTP05N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
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IXTP05N100 IXTP05N100 IXYS IXTA(P)05N100_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTA05N100 IXTA05N100 IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTP05N100M IXTP05N100M IXYS IXTP05N100M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXFH15N100Q3 IXFH15N100Q3 IXYS IXF_15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
1+1212.47 грн
5+948.94 грн
10+930.32 грн
В кошику  од. на суму  грн.
IXFT15N100Q3 IXFT15N100Q3 IXYS IXF_15N100Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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DSEC16-12A DSEC16-12A IXYS DSEC16-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 60W
Technology: HiPerFRED™
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DSEC16-12AS-TUB IXYS DSEC16-12AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Kind of package: tube
Power dissipation: 60W
Technology: HiPerFRED™
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IXTP4N80P IXTP4N80P IXYS IXTA(P)4N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
на замовлення 312 шт:
термін постачання 14-30 дні (днів)
4+133.10 грн
50+115.13 грн
250+107.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFK44N80P IXFK44N80P IXYS IXFK(X)44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 216 шт:
термін постачання 14-30 дні (днів)
1+1399.35 грн
2+1249.45 грн
3+1204.59 грн
5+1130.09 грн
10+1119.09 грн
В кошику  од. на суму  грн.
IXFK44N80Q3 IXFK44N80Q3 IXYS IXFK(X)44N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+1227.96 грн
В кошику  од. на суму  грн.
IXFR24N80P IXFR24N80P IXYS IXFR24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+918.92 грн
3+765.25 грн
В кошику  од. на суму  грн.
IXFK24N80P IXFK24N80P IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
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IXTA4N80P IXTA4N80P IXYS IXTA(P)4N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
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IXFH24N80P IXFH24N80P IXYS IXFH(K,T)24N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
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IXFH14N80P IXFH14N80P IXYS IXFH(Q,T)14N80P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 280 шт:
термін постачання 14-30 дні (днів)
1+662.75 грн
10+507.91 грн
30+380.93 грн
120+341.14 грн
В кошику  од. на суму  грн.
IXFX34N80 IXFX34N80 IXYS IXFK(X)34N80.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXFR44N80P IXFR44N80P IXYS IXFR44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFT14N80P IXFT14N80P IXYS IXFH(Q,T)14N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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IXFX44N80P IXFX44N80P IXYS IXFK(X)44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
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IXFK34N80 IXFK34N80 IXYS IXFK(X)34N80.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXFN44N80Q3 IXFN44N80Q3 IXYS IXFN44N80Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXFH22N65X2 IXFH22N65X2 IXYS IXF_22N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 37nC
Reverse recovery time: 145ns
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
2+451.26 грн
5+374.16 грн
10+340.30 грн
30+282.73 грн
60+278.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP22N65X2 IXFP22N65X2 IXYS IXF_22N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 37nC
Reverse recovery time: 145ns
на замовлення 223 шт:
термін постачання 14-30 дні (днів)
2+411.14 грн
10+235.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP22N65X2M IXFP22N65X2M IXYS IXFP22N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 37nC
Reverse recovery time: 145ns
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
2+366.47 грн
10+194.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA100E1200KB CLA100E1200KB IXYS CLA100E1200KB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Mounting: THT
Load current: 100A
Max. load current: 160A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.2kV
Case: TO264
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
1+687.37 грн
3+601.02 грн
10+503.67 грн
В кошику  од. на суму  грн.
CPC1972G CPC1972G IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 450 шт:
термін постачання 14-30 дні (днів)
3+181.41 грн
10+155.76 грн
25+147.29 грн
50+141.37 грн
100+134.60 грн
250+127.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1972GS CPC1972GS IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
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CPC1972GSTR IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
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IXFH10N80P IXFH10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
Drain current: 10A
Power dissipation: 300W
Drain-source voltage: 800V
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
2+424.82 грн
10+268.34 грн
30+252.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP10N80P IXFP10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 297 шт:
термін постачання 14-30 дні (днів)
2+366.47 грн
50+276.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH28N60P3 IXFH(Q)28N60P3.pdf
IXFH28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+605.32 грн
5+481.67 грн
10+427.49 грн
В кошику  од. на суму  грн.
IXFB82N60P IXFB82N60P.pdf
IXFB82N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2013.79 грн
5+1676.09 грн
25+1651.54 грн
В кошику  од. на суму  грн.
IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 266 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+869.69 грн
6+606.10 грн
10+572.24 грн
В кошику  од. на суму  грн.
IXFN180N25T IXFN180N25T.pdf
IXFN180N25T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 364nC
On-state resistance: 12.9mΩ
Technology: GigaMOS™
Drain current: 168A
Pulsed drain current: 500A
Drain-source voltage: 250V
Power dissipation: 900W
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1955.44 грн
5+1565.20 грн
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IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Pulsed drain current: 48A
Power dissipation: 446W
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IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Gate charge: 29nC
Technology: HiPerFET™; X3-Class
Pulsed drain current: 48A
Power dissipation: 446W
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IXKH47N60C IXKH47N60C.pdf
IXKH47N60C
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 250nC
Features of semiconductor devices: super junction coolmos
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IXTH90P10P IXT_90P10P.pdf
IXTH90P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO247-3
Case: TO247-3
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -90A
Reverse recovery time: 144ns
Gate charge: 0.12µC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Power dissipation: 462W
Kind of channel: enhancement
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+947.18 грн
5+750.01 грн
10+678.06 грн
30+580.71 грн
60+539.23 грн
В кошику  од. на суму  грн.
IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
на замовлення 308 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+445.79 грн
5+338.60 грн
10+301.36 грн
30+264.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+545.15 грн
10+400.40 грн
30+323.37 грн
В кошику  од. на суму  грн.
IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTH(T,Q)40N50L2.pdf
IXTT40N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTY14N60X2 ixty2n65x2.pdf
IXTY14N60X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
на замовлення 342 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+350.98 грн
10+251.41 грн
25+220.94 грн
70+216.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T.pdf
IXFN420N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.3mΩ
Technology: GigaMOS™; HiPerFET™
Drain current: 420A
Pulsed drain current: 1kA
Drain-source voltage: 100V
Power dissipation: 1.07kW
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2269.95 грн
5+1863.17 грн
В кошику  од. на суму  грн.
IXTH24N50L IXTH24N50L.pdf
IXTH24N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ460P2 IXTQ460P2.pdf
IXTQ460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Technology: Polar2™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Gate charge: 48nC
Reverse recovery time: 400ns
On-state resistance: 0.27Ω
Power dissipation: 480W
Gate-source voltage: ±30V
Kind of channel: enhancement
Mounting: THT
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+435.76 грн
5+357.23 грн
10+322.52 грн
30+286.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN210N30X3 IXFN210N30X3.pdf 300VProductBrief.pdf
IXFN210N30X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±20V
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 4.6mΩ
Technology: HiPerFET™; X3-Class
Drain current: 210A
Pulsed drain current: 650A
Drain-source voltage: 300V
Power dissipation: 695W
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+3555.35 грн
В кошику  од. на суму  грн.
LF2304NTR LF2304NTR.pdf
LF2304NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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IXYH30N65C3 IXYH(P)30N65C3.pdf
IXYH30N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Gate charge: 44nC
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXTH64N65X IXTH64N65X.pdf
IXTH64N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
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IXFN140N30P description IXFN140N30P.pdf
IXFN140N30P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Technology: HiPerFET™; Polar™
Drain current: 110A
Pulsed drain current: 300A
Drain-source voltage: 300V
Power dissipation: 700W
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2679.27 грн
5+2138.29 грн
В кошику  од. на суму  грн.
IXFN132N50P3 IXFN132N50P3.pdf
IXFN132N50P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 250ns
Gate charge: 250nC
On-state resistance: 39mΩ
Technology: HiPerFET™; Polar™
Drain current: 112A
Pulsed drain current: 330A
Drain-source voltage: 500V
Power dissipation: 1.5kW
на замовлення 278 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+3145.12 грн
5+2741.00 грн
10+2698.68 грн
В кошику  од. на суму  грн.
IXFN210N20P IXFN210N20P.pdf
IXFN210N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±30V
Reverse recovery time: 200ns
Gate charge: 255nC
On-state resistance: 10.5mΩ
Technology: HiPerFET™; Polar™
Drain current: 188A
Pulsed drain current: 600A
Drain-source voltage: 200V
Power dissipation: 1.07kW
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2991.96 грн
10+2544.61 грн
В кошику  од. на суму  грн.
IXFN44N100P IXFN44N100P.pdf
IXFN44N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 0.35µC
On-state resistance: 0.22Ω
Technology: HiPerFET™; Polar™
Drain current: 37A
Pulsed drain current: 110A
Drain-source voltage: 1kV
Power dissipation: 890W
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2778.64 грн
В кошику  од. на суму  грн.
IXFH15N100P IXFH15N100P.pdf
IXFH15N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+890.66 грн
3+739.00 грн
10+653.51 грн
30+586.63 грн
В кошику  од. на суму  грн.
IXFA5N100P IXFA(H,P)5N100P.pdf
IXFA5N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 5A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
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IXTP05N100P IXTP05N100P.pdf
IXTP05N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
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IXTP05N100 IXTA(P)05N100_HV.pdf
IXTP05N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTA05N100 IXTA(P)05N100_HV.pdf
IXTA05N100
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTP05N100M IXTP05N100M.pdf
IXTP05N100M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.7A; 25W; TO220FP; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.7A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXFH15N100Q3 IXF_15N100Q3.pdf
IXFH15N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1212.47 грн
5+948.94 грн
10+930.32 грн
В кошику  од. на суму  грн.
IXFT15N100Q3 IXF_15N100Q3.pdf
IXFT15N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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DSEC16-12A DSEC16-12A.pdf
DSEC16-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Max. forward voltage: 2.94V
Max. forward impulse current: 40A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 60W
Technology: HiPerFRED™
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DSEC16-12AS-TUB DSEC16-12AS.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A x2
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.96V
Max. forward impulse current: 40A
Kind of package: tube
Power dissipation: 60W
Technology: HiPerFRED™
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IXTP4N80P IXTA(P)4N80P.pdf
IXTP4N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
на замовлення 312 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+133.10 грн
50+115.13 грн
250+107.51 грн
Мінімальне замовлення: 4
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IXFK44N80P IXFK(X)44N80P.pdf
IXFK44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 216 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1399.35 грн
2+1249.45 грн
3+1204.59 грн
5+1130.09 грн
10+1119.09 грн
В кошику  од. на суму  грн.
IXFK44N80Q3 IXFK(X)44N80Q3.pdf
IXFK44N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1227.96 грн
В кошику  од. на суму  грн.
IXFR24N80P IXFR24N80P.pdf
IXFR24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+918.92 грн
3+765.25 грн
В кошику  од. на суму  грн.
IXFK24N80P IXFH(K,T)24N80P.pdf
IXFK24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
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IXTA4N80P IXTA(P)4N80P.pdf
IXTA4N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 560ns
Features of semiconductor devices: standard power mosfet
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IXFH24N80P IXFH(K,T)24N80P.pdf
IXFH24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
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IXFH14N80P IXFH(Q,T)14N80P_S.pdf
IXFH14N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 280 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+662.75 грн
10+507.91 грн
30+380.93 грн
120+341.14 грн
В кошику  од. на суму  грн.
IXFX34N80 IXFK(X)34N80.pdf
IXFX34N80
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXFR44N80P IXFR44N80P.pdf
IXFR44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFT14N80P IXFH(Q,T)14N80P_S.pdf
IXFT14N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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IXFX44N80P IXFK(X)44N80P.pdf
IXFX44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
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IXFK34N80 IXFK(X)34N80.pdf
IXFK34N80
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
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IXFN44N80Q3 IXFN44N80Q3.pdf
IXFN44N80Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXFH22N65X2 IXF_22N65X2.pdf
IXFH22N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 37nC
Reverse recovery time: 145ns
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+451.26 грн
5+374.16 грн
10+340.30 грн
30+282.73 грн
60+278.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP22N65X2 IXF_22N65X2.pdf
IXFP22N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 37nC
Reverse recovery time: 145ns
на замовлення 223 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+411.14 грн
10+235.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP22N65X2M IXFP22N65X2M.pdf
IXFP22N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 37nC
Reverse recovery time: 145ns
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+366.47 грн
10+194.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA100E1200KB CLA100E1200KB.pdf
CLA100E1200KB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT; tube
Mounting: THT
Load current: 100A
Max. load current: 160A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.2kV
Case: TO264
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+687.37 грн
3+601.02 грн
10+503.67 грн
В кошику  од. на суму  грн.
CPC1972G CPC1972.pdf
CPC1972G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 450 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+181.41 грн
10+155.76 грн
25+147.29 грн
50+141.37 грн
100+134.60 грн
250+127.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1972GS CPC1972.pdf
CPC1972GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
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CPC1972GSTR CPC1972.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
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IXFH10N80P IXFA(H,P,Q)10N80P.pdf
IXFH10N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
Drain current: 10A
Power dissipation: 300W
Drain-source voltage: 800V
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+424.82 грн
10+268.34 грн
30+252.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP10N80P IXFA(H,P,Q)10N80P.pdf
IXFP10N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 297 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+366.47 грн
50+276.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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