Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 300A Case: SimBus F Max. forward impulse current: 8kA Electrical mounting: Press-Fit Mechanical mounting: screw кількість в упаковці: 1 шт |
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MDNA360UB2200PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 135A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 280A Mechanical mounting: screw кількість в упаковці: 1 шт |
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MDNA380P2200KC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 380A Case: Y1-CU Max. forward voltage: 0.93V Max. forward impulse current: 11kA Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 425A Case: SimBus F Max. forward impulse current: 10kA Electrical mounting: Press-Fit Mechanical mounting: screw кількість в упаковці: 1 шт |
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MDNA50P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 50A Case: TO240AA Max. forward voltage: 1.09V Max. forward impulse current: 850A Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 600A Case: SimBus F Max. forward impulse current: 15kA Electrical mounting: Press-Fit Mechanical mounting: screw кількість в упаковці: 1 шт |
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MDNA660U2200PTEH | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA Max. off-state voltage: 2.2kV Load current: 660A Case: E3-Pack Version: module Max. forward voltage: 1.28V Max. forward impulse current: 5kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of bridge rectifier: three-phase кількість в упаковці: 1 шт |
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MDNA700P2200CC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 700A Case: ComPack Max. forward voltage: 1.05V Max. forward impulse current: 20kA Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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MDO1201-22N1 | IXYS |
Category: Diode modules Description: Module: diode; single diode; 2.2kV; If: 1.28kA; Y1-CU; W73; screw Version: W73 Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 1.28kA Type of module: diode Semiconductor structure: single diode Case: Y1-CU Max. forward impulse current: 36kA Max. forward voltage: 0.97V кількість в упаковці: 24 шт |
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MDO500-12N1 | IXYS | MDO500-12N1 Diode modules |
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MDO500-14N1 | IXYS | MDO500-14N1 Diode modules |
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MDO500-16N1 | IXYS | MDO500-16N1 Diode modules |
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MDO500-18N1 | IXYS | MDO500-18N1 Diode modules |
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MDO500-20N1 | IXYS | MDO500-20N1 Diode modules |
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MDO600-16N1 | IXYS |
Category: Diode modules Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.6kV Load current: 560A Case: Y1-CU Max. forward voltage: 1.01V Max. forward impulse current: 12.8kA Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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MEA250-12DA | IXYS |
Category: Diode modules Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Max. off-state voltage: 1.2kV Max. forward voltage: 1.54V Load current: 260A Semiconductor structure: common anode Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: Y4-M6 кількість в упаковці: 1 шт |
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MEA300-06DA | IXYS | MEA300-06DA Diode modules |
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MEA75-12DA | IXYS |
Category: Diode modules Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Max. off-state voltage: 1.2kV Load current: 75A Max. forward impulse current: 1.2kA Electrical mounting: screw Max. forward voltage: 1.85V Case: TO240AA Mechanical mounting: screw Semiconductor structure: common anode Type of module: diode кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 7-14 дні (днів) |
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MEA95-06DA | IXYS | MEA95-06DA Diode modules |
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MEE250-12DA | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Case: Y4-M6 Max. forward voltage: 1.54V Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Semiconductor structure: double series Max. forward impulse current: 2.4kA Load current: 260A кількість в упаковці: 1 шт |
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MEE300-06DA | IXYS |
Category: Diode modules Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Case: Y4-M6 Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. off-state voltage: 0.6kV Max. forward voltage: 1.19V Load current: 304A Semiconductor structure: double series Max. forward impulse current: 2.4kA кількість в упаковці: 1 шт |
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MEE75-12DA | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Max. off-state voltage: 1.2kV Load current: 75A Max. forward impulse current: 1.2kA Electrical mounting: screw Max. forward voltage: 1.85V Case: TO240AA Mechanical mounting: screw Semiconductor structure: double series Type of module: diode кількість в упаковці: 1 шт |
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MEE95-06DA | IXYS | MEE95-06DA Diode modules |
на замовлення 14 шт: термін постачання 7-14 дні (днів) |
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MEK150-04DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V Max. forward impulse current: 1.2kA Max. forward voltage: 1.4V Mechanical mounting: screw Max. off-state voltage: 0.4kV Electrical mounting: screw Load current: 150A Type of module: diode Semiconductor structure: common cathode Case: TO240AA кількість в упаковці: 1 шт |
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MEK250-12DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 260A Type of module: diode Semiconductor structure: common cathode Case: Y4-M6 Max. forward impulse current: 2.4kA Max. forward voltage: 1.54V кількість в упаковці: 1 шт |
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MEK300-06DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Type of module: diode Max. forward voltage: 1.19V Load current: 304A Semiconductor structure: common cathode Max. forward impulse current: 2.4kA Case: Y4-M6 Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 0.6kV кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 7-14 дні (днів) |
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MEK350-02DA | IXYS | MEK350-02DA Diode modules |
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MEK600-04DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V Electrical mounting: screw Load current: 600A Type of module: diode Semiconductor structure: common cathode Case: Y4-M6 Max. forward impulse current: 3kA Max. forward voltage: 1.2V Mechanical mounting: screw Max. off-state voltage: 0.4kV кількість в упаковці: 1 шт |
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MEK75-12DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Type of module: diode Semiconductor structure: common cathode Max. off-state voltage: 1.2kV Load current: 75A Case: TO240AA Max. forward voltage: 1.85V Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 7-14 дні (днів) |
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MEK95-06DA | IXYS | MEK95-06DA Diode modules |
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MEO450-12DA | IXYS |
Category: Diode modules Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 453A Case: Y4-M6 Max. forward voltage: 1.76V Max. forward impulse current: 4.8kA Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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MEO500-06DA | IXYS |
Category: Diode modules Description: Module: diode; single diode; 600V; If: 514A; Y4-M6; Ufmax: 1.41V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 514A Case: Y4-M6 Max. forward voltage: 1.41V Max. forward impulse current: 4.8kA Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 7-14 дні (днів) |
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MEO550-02DA | IXYS |
Category: Diode modules Description: Module: diode; single diode; 200V; If: 582A; Y4-M6; Ufmax: 1.08V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 200V Load current: 582A Case: Y4-M6 Max. forward voltage: 1.08V Max. forward impulse current: 4.8kA Electrical mounting: screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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MG06100S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: package S кількість в упаковці: 1 шт |
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MG06150S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: package S кількість в упаковці: 1 шт |
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MG06300D-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: Y3-DCB Electrical mounting: 2.8x0,5mm connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Mechanical mounting: screw кількість в упаковці: 1 шт |
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MG06400D-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Pulsed collector current: 800A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: Y3-DCB Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 400A кількість в упаковці: 1 шт |
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MG0675S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 75A Case: package S Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Mechanical mounting: screw кількість в упаковці: 1 шт |
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MG12100S-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: package S Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge кількість в упаковці: 1 шт |
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MG12150S-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Case: Y4-M5 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A кількість в упаковці: 1 шт |
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MG12150W-XN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: package W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A кількість в упаковці: 1 шт |
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MG12200D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A кількість в упаковці: 1 шт |
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MG12300D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: Y3-DCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge кількість в упаковці: 1 шт |
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MG17100S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: Y4-M5 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge кількість в упаковці: 1 шт |
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MG1750S-BN4MM | IXYS | MG1750S-BN4MM IGBT modules |
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MG1775S-BN4MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 75A Case: Y4-M5 Electrical mounting: 2.8x0,5mm connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 1 шт |
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MID100-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 90A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 560W Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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MID145-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 110A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 700W Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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MID150-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 760W Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 120A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 760W Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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MID200-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 180A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 360A Power dissipation: 1.13kW Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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MID300-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 220A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Power dissipation: 1.38kW Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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MID550-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 460A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Power dissipation: 2.75kW Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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MIEB100W1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Type of module: IGBT Topology: MOSFET three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Collector current: 128A кількість в упаковці: 1 шт |
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MIEB101H1200EH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W Application: motors; photovoltaics Topology: H-bridge Power dissipation: 630W Technology: Sonic FRD™; SPT+ Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 128A кількість в упаковці: 1 шт |
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MIEB101W1200EH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Application: motors; photovoltaics Power dissipation: 630W Type of module: IGBT Technology: Sonic FRD™; SPT+ Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 128A Pulsed collector current: 200A кількість в упаковці: 1 шт |
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MII100-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A Case: Y4-M5 Application: motors; photovoltaics Power dissipation: 560W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 90A Pulsed collector current: 150A кількість в упаковці: 1 шт |
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MII145-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Power dissipation: 700W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 200A кількість в упаковці: 1 шт |
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MII200-12A4 | IXYS | MII200-12A4 IGBT modules |
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MII300-12A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 220A Topology: IGBT half-bridge Technology: NPT Case: Y3-DCB Application: motors Power dissipation: 1.38kW Collector current: 220A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
товар відсутній |
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MII75-12A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Power dissipation: 370W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 100A кількість в упаковці: 1 шт |
товар відсутній |
MDNA300P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 300A
Case: SimBus F
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 300A
Case: SimBus F
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MDNA360UB2200PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 135A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 135A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MDNA380P2200KC |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 380A
Case: Y1-CU
Max. forward voltage: 0.93V
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 380A
Case: Y1-CU
Max. forward voltage: 0.93V
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MDNA425P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 425A
Case: SimBus F
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 425A
Case: SimBus F
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MDNA50P2200TG |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 50A
Case: TO240AA
Max. forward voltage: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 50A
Case: TO240AA
Max. forward voltage: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MDNA600P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 600A
Case: SimBus F
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 600A
Case: SimBus F
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MDNA660U2200PTEH |
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Max. off-state voltage: 2.2kV
Load current: 660A
Case: E3-Pack
Version: module
Max. forward voltage: 1.28V
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of bridge rectifier: three-phase
кількість в упаковці: 1 шт
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Max. off-state voltage: 2.2kV
Load current: 660A
Case: E3-Pack
Version: module
Max. forward voltage: 1.28V
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of bridge rectifier: three-phase
кількість в упаковці: 1 шт
товар відсутній
MDNA700P2200CC |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MDO1201-22N1 |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.28kA; Y1-CU; W73; screw
Version: W73
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 1.28kA
Type of module: diode
Semiconductor structure: single diode
Case: Y1-CU
Max. forward impulse current: 36kA
Max. forward voltage: 0.97V
кількість в упаковці: 24 шт
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.28kA; Y1-CU; W73; screw
Version: W73
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 1.28kA
Type of module: diode
Semiconductor structure: single diode
Case: Y1-CU
Max. forward impulse current: 36kA
Max. forward voltage: 0.97V
кількість в упаковці: 24 шт
товар відсутній
MDO600-16N1 |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 560A; Y1-CU; Ufmax: 1.01V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 560A
Case: Y1-CU
Max. forward voltage: 1.01V
Max. forward impulse current: 12.8kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MEA250-12DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
Semiconductor structure: common anode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y4-M6
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
Semiconductor structure: common anode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y4-M6
кількість в упаковці: 1 шт
товар відсутній
MEA75-12DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Max. off-state voltage: 1.2kV
Load current: 75A
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. forward voltage: 1.85V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: common anode
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Max. off-state voltage: 1.2kV
Load current: 75A
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. forward voltage: 1.85V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: common anode
Type of module: diode
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2208.51 грн |
2+ | 2014 грн |
3+ | 1938.56 грн |
MEE250-12DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Max. forward voltage: 1.54V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Load current: 260A
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Case: Y4-M6
Max. forward voltage: 1.54V
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
Load current: 260A
кількість в упаковці: 1 шт
товар відсутній
MEE300-06DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: double series
Max. forward impulse current: 2.4kA
кількість в упаковці: 1 шт
товар відсутній
MEE75-12DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Max. off-state voltage: 1.2kV
Load current: 75A
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. forward voltage: 1.85V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Max. off-state voltage: 1.2kV
Load current: 75A
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. forward voltage: 1.85V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
кількість в упаковці: 1 шт
товар відсутній
MEE95-06DA |
Виробник: IXYS
MEE95-06DA Diode modules
MEE95-06DA Diode modules
на замовлення 14 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1930.13 грн |
2+ | 1824.68 грн |
MEK150-04DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.4V
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 150A
Type of module: diode
Semiconductor structure: common cathode
Case: TO240AA
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.4V
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 150A
Type of module: diode
Semiconductor structure: common cathode
Case: TO240AA
кількість в упаковці: 1 шт
товар відсутній
MEK250-12DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
кількість в упаковці: 1 шт
товар відсутній
MEK300-06DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of module: diode
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of module: diode
Max. forward voltage: 1.19V
Load current: 304A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Case: Y4-M6
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 5586.23 грн |
MEK600-04DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Electrical mounting: screw
Load current: 600A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 3kA
Max. forward voltage: 1.2V
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Electrical mounting: screw
Load current: 600A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 3kA
Max. forward voltage: 1.2V
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
товар відсутній
MEK75-12DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2208.51 грн |
2+ | 2014 грн |
3+ | 1938.56 грн |
36+ | 1907.35 грн |
MEO450-12DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 453A
Case: Y4-M6
Max. forward voltage: 1.76V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 453A; Y4-M6; Ufmax: 1.76V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 453A
Case: Y4-M6
Max. forward voltage: 1.76V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6386.6 грн |
MEO500-06DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 514A; Y4-M6; Ufmax: 1.41V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 514A
Case: Y4-M6
Max. forward voltage: 1.41V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; single diode; 600V; If: 514A; Y4-M6; Ufmax: 1.41V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 514A
Case: Y4-M6
Max. forward voltage: 1.41V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6141.31 грн |
MEO550-02DA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 200V; If: 582A; Y4-M6; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 200V
Load current: 582A
Case: Y4-M6
Max. forward voltage: 1.08V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; single diode; 200V; If: 582A; Y4-M6; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 200V
Load current: 582A
Case: Y4-M6
Max. forward voltage: 1.08V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MG06100S-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
кількість в упаковці: 1 шт
товар відсутній
MG06150S-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: package S
кількість в упаковці: 1 шт
товар відсутній
MG06300D-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: 2.8x0,5mm connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: Y3-DCB
Electrical mounting: 2.8x0,5mm connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MG06400D-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: Y3-DCB
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: Y3-DCB
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 400A
кількість в упаковці: 1 шт
товар відсутній
MG0675S-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 75A
Case: package S
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 75A
Case: package S
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MG12100S-BN2MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
товар відсутній
MG12150S-BN2MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
товар відсутній
MG12150W-XN2MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
товар відсутній
MG12200D-BN2MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 1 шт
товар відсутній
MG12300D-BN2MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
товар відсутній
MG17100S-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
товар відсутній
MG1775S-BN4MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: 2.8x0,5mm connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: 2.8x0,5mm connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MID100-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 560W
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MID145-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Y4-M5
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 700W
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MID150-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 760W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 120A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 760W
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 760W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 120A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 760W
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MID200-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 180A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Power dissipation: 1.13kW
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 180A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Power dissipation: 1.13kW
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MID300-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MID550-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 460A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.75kW
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 460A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.75kW
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MIEB100W1200TEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Topology: MOSFET three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 128A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Topology: MOSFET three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 128A
кількість в упаковці: 1 шт
товар відсутній
MIEB101H1200EH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W
Application: motors; photovoltaics
Topology: H-bridge
Power dissipation: 630W
Technology: Sonic FRD™; SPT+
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 128A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W
Application: motors; photovoltaics
Topology: H-bridge
Power dissipation: 630W
Technology: Sonic FRD™; SPT+
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 128A
кількість в упаковці: 1 шт
товар відсутній
MIEB101W1200EH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 630W
Type of module: IGBT
Technology: Sonic FRD™; SPT+
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 128A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Application: motors; photovoltaics
Power dissipation: 630W
Type of module: IGBT
Technology: Sonic FRD™; SPT+
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 128A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
товар відсутній
MII100-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A
Case: Y4-M5
Application: motors; photovoltaics
Power dissipation: 560W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 150A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A
Case: Y4-M5
Application: motors; photovoltaics
Power dissipation: 560W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 150A
кількість в упаковці: 1 шт
товар відсутній
MII145-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 700W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 200A
кількість в упаковці: 1 шт
товар відсутній
MII300-12A4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 220A
Topology: IGBT half-bridge
Technology: NPT
Case: Y3-DCB
Application: motors
Power dissipation: 1.38kW
Collector current: 220A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 220A
Topology: IGBT half-bridge
Technology: NPT
Case: Y3-DCB
Application: motors
Power dissipation: 1.38kW
Collector current: 220A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
MII75-12A3 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 370W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 100A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A
Case: Y4-M5
Application: fans; for pump; motors; photovoltaics
Power dissipation: 370W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 100A
кількість в упаковці: 1 шт
товар відсутній