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LCB110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MCMA65PD1200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8110BB5E66A0C4&compId=MCMA65PD1200TB.pdf?ci_sign=64ffce97cdb3b2a964512360d5b5ffa53cffe136 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA65PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8116D7636D20C4&compId=MCMA65PD1600TB.pdf?ci_sign=1a113da424381882bdb556bade45ffad1327a809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA265PD1600KB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 421A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP220N04T2 IXTP220N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
2+275.65 грн
10+196.16 грн
50+161.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA220N04T2 IXTA220N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA120N04T2 IXTA120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA220N04T2-7 IXTA220N04T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7E9820&compId=IXTA220N04T2-7.pdf?ci_sign=dfbe0e0fc65622b215cc5fc0881ade14b823b82d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH420N04T2 IXTH420N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP120N04T2 IXTP120N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTT440N04T4HV IXTT440N04T4HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14DF820&compId=IXTT440N04T4HV.pdf?ci_sign=e183a6537a67fc5446061602a4901de288dda214 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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IXFH220N06T3 IXFH220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 IXFA220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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MCD56-12io8B MCD56-12io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01AAE7DDC3E27&compId=MCD56-12IO8B-DTE.pdf?ci_sign=a491116a91803ed0b1e3265398a2b9e8dd527589 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Max. load current: 100A
Kind of package: bulk
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+2194.89 грн
3+1801.29 грн
10+1614.70 грн
В кошику  од. на суму  грн.
MMIX1F40N110P MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+4424.13 грн
3+3629.69 грн
10+3259.70 грн
20+3258.11 грн
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MMIX2F60N50P3
+1
 		MMIX2F60N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix2f60n50p3_datasheet.pdf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2857.82 грн
3+2341.12 грн
10+2105.09 грн
В кошику  од. на суму  грн.
IXTP28P065T IXTP28P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
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IXTA28P065T IXTA28P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
3+212.10 грн
10+157.88 грн
50+131.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDMA360UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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MDMA210UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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MDMA280UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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MCC56-14io1B MCC56-14io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+2151.95 грн
10+1762.22 грн
В кошику  од. на суму  грн.
MCC56-14io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
2+279.94 грн
5+201.74 грн
10+174.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP1R6N100D2 IXTP1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+264.49 грн
10+215.29 грн
50+157.08 грн
100+139.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA1R6N100D2 IXTA1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2HV IXTA1R6N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9E51B522E58BF&compId=IXTA1R6N100D2HV.pdf?ci_sign=55d26c1e82b4e332d5c0e06370e2b4aeba32cd94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
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MEK95-06DA MEK95-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.36V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
1+2027.44 грн
3+1782.15 грн
5+1658.56 грн
В кошику  од. на суму  грн.
IXFK102N30P IXFK102N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957269820&compId=IXFK102N30P.pdf?ci_sign=c151da4b07d5bf21f7c6dd2fd7ca83cee205a948 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1112.04 грн
В кошику  од. на суму  грн.
DSEC60-06A DSEC60-06A IXYS Littelfuse-Power-Semiconductors-DSEC60-06A-Datasheet?assetguid=6df7d9d0-4860-43a3-b1da-df3589182aec Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSEC60-06B DSEC60-06B IXYS Littelfuse-Power-Semiconductors-DSEC60-06B-Datasheet?assetguid=b53129d0-1e05-4d24-9f36-08dffe109f5e Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 30ns
Technology: HiPerFRED™
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DSEC60-12A DSEC60-12A IXYS Littelfuse-Power-Semiconductors-DSEC60-12A-Datasheet?assetguid=209f6ea6-9eb4-4faf-a3e4-37cae54527a2 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IXTK140N30P IXTK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917BA10D161E27&compId=IXTK140N30P-DTE.pdf?ci_sign=0539e3c51f0d1e46075142cd98d33da5a34d86f9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 185nC
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXFK140N25T IXFK140N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE9612BF9D820&compId=IXFK(X)140N25T.pdf?ci_sign=d001479cc13bc4a4e1385c15ba37bc156335595f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain-source voltage: 250V
Power dissipation: 960W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXYK140N90C3 IXYK140N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB36CF0F167820&compId=IXYK(X)140N90C3.pdf?ci_sign=ff461166cb57c441f4d71986b43376cd7e351146 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 122ns
Gate charge: 330nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Power dissipation: 1.63kW
Pulsed collector current: 840A
Collector-emitter voltage: 900V
Case: TO264
Kind of package: tube
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IXTH64N65X IXTH64N65X IXYS IXTH64N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
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CPC1777J CPC1777J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75F00C7&compId=CPC1777.pdf?ci_sign=55f0bc911dcb7d90357508b2f81c34a9be0058e7 Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; OptoMOS; 0.5Ω
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: i4-pac
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CPC1779J CPC1779J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC76040C7&compId=CPC1779.pdf?ci_sign=a98187da5f213bfc3a43f1f9a372c17ef8570ead Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; OptoMOS
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.4Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: ISOPLUS264™
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IXTQ82N25P IXTQ82N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E5ACBC3F3E27&compId=IXTK82N25P-DTE.pdf?ci_sign=2d80fbef81a4d311cac049c9dcb145bc3406bb27 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
1+581.35 грн
10+402.68 грн
30+378.76 грн
В кошику  од. на суму  грн.
IXTP1N120P IXTP1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTA1N120P IXTA1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTH62N65X2 IXTH62N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B4952B820&compId=IXTH62N65X2.pdf?ci_sign=36d0efac15306422ef53e7207db6fd4a2fefb0ff Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Features of semiconductor devices: ultra junction x-class
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IXTH52N65X IXTH52N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49515820&compId=IXTH52N65X.pdf?ci_sign=09c23fcab68d044a472f91698252bd936ba7f5b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 435ns
Features of semiconductor devices: ultra junction x-class
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LAA125PL LAA125PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+493.76 грн
50+300.61 грн
100+240.81 грн
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LAA125S LAA125S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
2+299.69 грн
50+233.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA125LS LAA125LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
2+358.95 грн
10+267.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA125 LAA125 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: THT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
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LAA125LSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
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LAA125PLTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
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LAA125PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
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LAA125STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LAA108P LAA108P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 300mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 527 шт:
термін постачання 21-30 дні (днів)
3+168.31 грн
10+143.53 грн
25+125.19 грн
30+124.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LAA120L LAA120L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B220C7&compId=LAA120L.pdf?ci_sign=ca579abff6b2671cd4676e87f4614c88004b41a2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
1+493.76 грн
50+300.61 грн
В кошику  од. на суму  грн.
LAA120S LAA120S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B060C7&compId=LAA120.pdf?ci_sign=efa295b71167d3ed35ff46d4a98ae6a421a3c50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
2+336.62 грн
10+248.78 грн
50+231.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA120LS LAA120LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B220C7&compId=LAA120L.pdf?ci_sign=ca579abff6b2671cd4676e87f4614c88004b41a2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
1+493.76 грн
50+300.61 грн
В кошику  од. на суму  грн.
LAA120PL LAA120PL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B220C7&compId=LAA120L.pdf?ci_sign=ca579abff6b2671cd4676e87f4614c88004b41a2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+493.76 грн
50+300.61 грн
100+240.81 грн
В кошику  од. на суму  грн.
LAA108 LAA108 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 300mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
3+170.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LAA120 LAA120 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B060C7&compId=LAA120.pdf?ci_sign=efa295b71167d3ed35ff46d4a98ae6a421a3c50a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
2+313.43 грн
10+224.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA160 PLA160 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A992E0C7&compId=PLA160.pdf?ci_sign=fcfea17bceba229e2df55d271b23d01460b357fa Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Control voltage: 1.8...2.8V DC
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 233 шт:
термін постачання 21-30 дні (днів)
2+332.32 грн
10+267.92 грн
50+261.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA134S PLA134S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98B60C7&compId=PLA134.pdf?ci_sign=7731cdb8abeac785cdd7ba775e2f0d505010a3bd Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 350mA
Control current max.: 50mA
On-state resistance: 3Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 213 шт:
термін постачання 21-30 дні (днів)
1+1337.03 грн
50+813.33 грн
В кошику  од. на суму  грн.
LCB110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MCMA65PD1200TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8110BB5E66A0C4&compId=MCMA65PD1200TB.pdf?ci_sign=64ffce97cdb3b2a964512360d5b5ffa53cffe136 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA65PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8116D7636D20C4&compId=MCMA65PD1600TB.pdf?ci_sign=1a113da424381882bdb556bade45ffad1327a809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA265PD1600KB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 421A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP220N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5
IXTP220N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+275.65 грн
10+196.16 грн
50+161.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA220N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC709D95CCF820&compId=IXTA(P)220N04T2.pdf?ci_sign=1db27c209e7af5f3f0d648bd91c318079852def5
IXTA220N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTA120N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA220N04T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7E9820&compId=IXTA220N04T2-7.pdf?ci_sign=dfbe0e0fc65622b215cc5fc0881ade14b823b82d
IXTA220N04T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH420N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494E9820&compId=IXTH420N04T2.pdf?ci_sign=9304d2c9a0f1384c4669abc672571b3f8ebff765
IXTH420N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP120N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA2CF46A37D820&compId=IXTA(P)120N04T2.pdf?ci_sign=9781234723d86244a767988de041b1dde0e2fcc1
IXTP120N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTT440N04T4HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14DF820&compId=IXTT440N04T4HV.pdf?ci_sign=e183a6537a67fc5446061602a4901de288dda214
IXTT440N04T4HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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IXFH220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFH220N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFA220N06T3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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MCD56-12io8B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01AAE7DDC3E27&compId=MCD56-12IO8B-DTE.pdf?ci_sign=a491116a91803ed0b1e3265398a2b9e8dd527589 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD56-12io8B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Max. load current: 100A
Kind of package: bulk
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2194.89 грн
3+1801.29 грн
10+1614.70 грн
В кошику  од. на суму  грн.
MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
MMIX1F40N110P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4424.13 грн
3+3629.69 грн
10+3259.70 грн
20+3258.11 грн
В кошику  од. на суму  грн.
MMIX2F60N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix2f60n50p3_datasheet.pdf.pdf
MMIX2F60N50P3
+1
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2857.82 грн
3+2341.12 грн
10+2105.09 грн
В кошику  од. на суму  грн.
IXTP28P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f
IXTP28P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA28P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f
IXTA28P065T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+212.10 грн
10+157.88 грн
50+131.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDMA360UB1600PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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В кошику  од. на суму  грн.
MDMA210UB1600PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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В кошику  од. на суму  грн.
MDMA280UB1600PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товару немає в наявності
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MCC56-14io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC56-14io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2151.95 грн
10+1762.22 грн
В кошику  од. на суму  грн.
MCC56-14io8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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В кошику  од. на суму  грн.
IXTY1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTY1R6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+279.94 грн
5+201.74 грн
10+174.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTP1R6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+264.49 грн
10+215.29 грн
50+157.08 грн
100+139.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTA1R6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9E51B522E58BF&compId=IXTA1R6N100D2HV.pdf?ci_sign=55d26c1e82b4e332d5c0e06370e2b4aeba32cd94
IXTA1R6N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
товару немає в наявності
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MEK95-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MEK95-06DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.36V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2027.44 грн
3+1782.15 грн
5+1658.56 грн
В кошику  од. на суму  грн.
IXFK102N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957269820&compId=IXFK102N30P.pdf?ci_sign=c151da4b07d5bf21f7c6dd2fd7ca83cee205a948
IXFK102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1112.04 грн
В кошику  од. на суму  грн.
DSEC60-06A Littelfuse-Power-Semiconductors-DSEC60-06A-Datasheet?assetguid=6df7d9d0-4860-43a3-b1da-df3589182aec
DSEC60-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSEC60-06B Littelfuse-Power-Semiconductors-DSEC60-06B-Datasheet?assetguid=b53129d0-1e05-4d24-9f36-08dffe109f5e
DSEC60-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 30ns
Technology: HiPerFRED™
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DSEC60-12A Littelfuse-Power-Semiconductors-DSEC60-12A-Datasheet?assetguid=209f6ea6-9eb4-4faf-a3e4-37cae54527a2
DSEC60-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IXTK140N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917BA10D161E27&compId=IXTK140N30P-DTE.pdf?ci_sign=0539e3c51f0d1e46075142cd98d33da5a34d86f9
IXTK140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 185nC
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXFK140N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE9612BF9D820&compId=IXFK(X)140N25T.pdf?ci_sign=d001479cc13bc4a4e1385c15ba37bc156335595f
IXFK140N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain-source voltage: 250V
Power dissipation: 960W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXYK140N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB36CF0F167820&compId=IXYK(X)140N90C3.pdf?ci_sign=ff461166cb57c441f4d71986b43376cd7e351146
IXYK140N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 122ns
Gate charge: 330nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Power dissipation: 1.63kW
Pulsed collector current: 840A
Collector-emitter voltage: 900V
Case: TO264
Kind of package: tube
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IXTH64N65X IXTH64N65X.pdf
IXTH64N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
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CPC1777J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75F00C7&compId=CPC1777.pdf?ci_sign=55f0bc911dcb7d90357508b2f81c34a9be0058e7
CPC1777J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; OptoMOS; 0.5Ω
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: i4-pac
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CPC1779J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC76040C7&compId=CPC1779.pdf?ci_sign=a98187da5f213bfc3a43f1f9a372c17ef8570ead
CPC1779J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; OptoMOS
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.4Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: ISOPLUS264™
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IXTQ82N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E5ACBC3F3E27&compId=IXTK82N25P-DTE.pdf?ci_sign=2d80fbef81a4d311cac049c9dcb145bc3406bb27
IXTQ82N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+581.35 грн
10+402.68 грн
30+378.76 грн
В кошику  од. на суму  грн.
IXTP1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTP1N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
IXTA1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTA1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
IXTH62N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B4952B820&compId=IXTH62N65X2.pdf?ci_sign=36d0efac15306422ef53e7207db6fd4a2fefb0ff
IXTH62N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.
IXTH52N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B49515820&compId=IXTH52N65X.pdf?ci_sign=09c23fcab68d044a472f91698252bd936ba7f5b5
IXTH52N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 52A; 660W; TO247-3; 435ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 52A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 113nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 435ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.
LAA125PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a
LAA125PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+493.76 грн
50+300.61 грн
100+240.81 грн
В кошику  од. на суму  грн.
LAA125S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904
LAA125S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+299.69 грн
50+233.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA125LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a
LAA125LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+358.95 грн
10+267.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA125 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904
LAA125
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: THT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LAA125LSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LAA125PLTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B5A0C7&compId=LAA125L.pdf?ci_sign=8ce76c522e028f88ab94d53b2bb700a91cb7f50a
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LAA125PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LAA125STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B3E0C7&compId=LAA125.pdf?ci_sign=2b631907f03b92f856d0d76b7c03ec658d5a2904
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Case: DIP8
Mounting: SMT
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LAA108P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
LAA108P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 300mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 527 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+168.31 грн
10+143.53 грн
25+125.19 грн
30+124.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LAA120L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B220C7&compId=LAA120L.pdf?ci_sign=ca579abff6b2671cd4676e87f4614c88004b41a2
LAA120L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+493.76 грн
50+300.61 грн
В кошику  од. на суму  грн.
LAA120S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B060C7&compId=LAA120.pdf?ci_sign=efa295b71167d3ed35ff46d4a98ae6a421a3c50a
LAA120S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+336.62 грн
10+248.78 грн
50+231.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA120LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B220C7&compId=LAA120L.pdf?ci_sign=ca579abff6b2671cd4676e87f4614c88004b41a2
LAA120LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+493.76 грн
50+300.61 грн
В кошику  од. на суму  грн.
LAA120PL pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B220C7&compId=LAA120L.pdf?ci_sign=ca579abff6b2671cd4676e87f4614c88004b41a2
LAA120PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+493.76 грн
50+300.61 грн
100+240.81 грн
В кошику  од. на суму  грн.
LAA108 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892260C7&compId=LAA108.pdf?ci_sign=b422f07330ccafc6349ee64d10cd1d1a446af717
LAA108
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 300mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+170.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LAA120 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493F923B060C7&compId=LAA120.pdf?ci_sign=efa295b71167d3ed35ff46d4a98ae6a421a3c50a
LAA120
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+313.43 грн
10+224.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA160 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A992E0C7&compId=PLA160.pdf?ci_sign=fcfea17bceba229e2df55d271b23d01460b357fa
PLA160
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.8÷2.8VDC; Icntrl max: 50mA
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 50µs
Turn-off time: 50µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Control voltage: 1.8...2.8V DC
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 233 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+332.32 грн
10+267.92 грн
50+261.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA134S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98B60C7&compId=PLA134.pdf?ci_sign=7731cdb8abeac785cdd7ba775e2f0d505010a3bd
PLA134S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 350mA; max.100VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 350mA
Control current max.: 50mA
On-state resistance: 3Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 213 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1337.03 грн
50+813.33 грн
В кошику  од. на суму  грн.
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