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DSEP30-06BR DSEP30-06BR IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEE50238512143&compId=DSEP30-06BR.pdf?ci_sign=8fe33b0a2e535ec1dd571a8e494d41ae71ddc313 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Kind of package: tube
Mounting: THT
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS247™
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 1.61V
Power dissipation: 135W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
1+582.71 грн
3+363.37 грн
8+343.53 грн
10+340.36 грн
30+330.05 грн
В кошику  од. на суму  грн.
CPC1705Y CPC1705Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147DD40C7&compId=CPC1705y.pdf?ci_sign=9a0e8e0330114c6075c230c6290a49adb090967b Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 2ms
Turn-off time: 12ms
Contacts configuration: SPST-NC
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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FDA217 FDA217 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Operating temperature: -40...85°C
Case: DIP8
Type of integrated circuit: driver
Kind of package: tube
Mounting: THT
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
2+284.52 грн
5+186.44 грн
14+176.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDA217S FDA217S IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
2+244.36 грн
3+210.25 грн
5+197.55 грн
6+185.65 грн
10+176.92 грн
14+175.34 грн
20+168.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDA217STR FDA217STR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Operating temperature: -40...85°C
Case: SO8
Type of integrated circuit: driver
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
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FDM47-06KC5
+1
 		FDM47-06KC5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F363DA39EA5820&compId=FDM47-06KC5.pdf?ci_sign=01c8a9463d526f84120914de2773f068278b2c9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Mounting: THT
Topology: buck chopper
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Semiconductor structure: diode/transistor
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: super junction coolmos
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 45mΩ
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Case: ISOPLUS i4-pac™ x024a
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+667.30 грн
3+591.07 грн
10+568.06 грн
В кошику  од. на суму  грн.
FMD15-06KC5 FMD15-06KC5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F522E6E4505820&compId=FMD15-06KC5.pdf?ci_sign=2f4352c0a860f23fb93ad3877941b2c9bd4b7589 Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Topology: boost chopper
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+1052.64 грн
3+924.29 грн
В кошику  од. на суму  грн.
PLB150 PLB150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
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PLB150STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
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IXGP48N60A3 IXGP48N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXTA1N200P3HV IXTA1N200P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDCB63FB405820&compId=IXTA(H)1N200P3HV.pdf?ci_sign=deac538022c3e7b6cce7ceee522f5c545d6ce7d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO263HV
Polarisation: unipolar
Reverse recovery time: 2.3µs
Drain current: 1A
On-state resistance: 40Ω
Power dissipation: 125W
Drain-source voltage: 2kV
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IXTH1N200P3 IXTH1N200P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDCB63FB405820&compId=IXTA(H)1N200P3HV.pdf?ci_sign=deac538022c3e7b6cce7ceee522f5c545d6ce7d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Polarisation: unipolar
Reverse recovery time: 2.3µs
Drain current: 1A
On-state resistance: 40Ω
Power dissipation: 125W
Drain-source voltage: 2kV
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IXTH1N200P3HV IXTH1N200P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDCB63FB405820&compId=IXTA(H)1N200P3HV.pdf?ci_sign=deac538022c3e7b6cce7ceee522f5c545d6ce7d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Polarisation: unipolar
Reverse recovery time: 2.3µs
Drain current: 1A
On-state resistance: 40Ω
Power dissipation: 125W
Drain-source voltage: 2kV
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MCC95-16io1B MCC95-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B6E43AC9E8AA0A18&compId=MCC95-16io1B.pdf?ci_sign=e9bfa8afaf0bdcd7ce82437234dbb70dcd776912 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
Kind of package: bulk
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+2662.35 грн
5+2460.28 грн
36+2377.77 грн
В кошику  од. на суму  грн.
IXTH75N10L2 IXTH75N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
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LOC112P LOC112P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 3.75kV; Flatpack 8pin
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Kind of output: photodiode
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+427.21 грн
В кошику  од. на суму  грн.
MCMA260PD1800YB IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Case: Y4-M6
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.06V
Max. off-state voltage: 1.8kV
Load current: 260A
Max. load current: 408A
Max. forward impulse current: 8.3kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
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MCMA50PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD81090C28DA00C4&compId=MCMA50PD1600TB.pdf?ci_sign=92f358604823056a64eac35e07bc66d407373c74 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 78/200mA
Threshold on-voltage: 0.89V
Max. forward voltage: 1.17V
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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MCMA65PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8116D7636D20C4&compId=MCMA65PD1600TB.pdf?ci_sign=1a113da424381882bdb556bade45ffad1327a809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 95/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.17V
Load current: 65A
Max. load current: 105A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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CMA80PD1600NA CMA80PD1600NA IXYS CMA80PD1600NA.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Electrical mounting: screw
Mechanical mounting: screw
Load current: 80A
Gate current: 100/200mA
Max. load current: 126A
Threshold on-voltage: 0.86V
Max. forward voltage: 1.29V
Max. forward impulse current: 1.07kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: SOT227B
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
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IXFH56N30X3 IXFH56N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBB8D50EDA38BF&compId=IXF_56N30X3.pdf?ci_sign=633f7ff7bbd4d5f73ecc58750c76abed9db4d947 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 115ns
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Drain current: 56A
Drain-source voltage: 300V
Power dissipation: 320W
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
1+657.04 грн
2+503.00 грн
6+475.24 грн
30+456.99 грн
В кошику  од. на суму  грн.
IXFH50N30Q3 IXFH50N30Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E17586FE98BF&compId=IXFH50N30Q3_IXFT50N30Q3.pdf?ci_sign=52d892f03a88a92038e3318344d24f837885d158 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 65nC
Reverse recovery time: 250ns
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 300V
Power dissipation: 690W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+851.85 грн
2+760.85 грн
4+718.80 грн
10+691.04 грн
В кошику  од. на суму  грн.
DSB60C30PB DSB60C30PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA0D6D80B458BF&compId=DSB60C30PB.pdf?ci_sign=0a17ebb4b5d6fad1a724db90a897b139c6c3369e Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Power dissipation: 145W
Max. forward impulse current: 530A
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
4+106.80 грн
5+88.86 грн
10+78.54 грн
14+69.02 грн
38+65.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DPG30P300PJ DPG30P300PJ IXYS media?resourcetype=datasheets&itemid=4BEC0773-2CA1-4DE0-8566-CFFCAC47A849&filename=Littelfuse-Power-Semiconductors-DPG30P300PJ-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 450A; ISOPLUS220™
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 30A
Max. off-state voltage: 300V
Power dissipation: 145W
Max. forward impulse current: 0.45kA
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+642.52 грн
3+427.63 грн
6+404.62 грн
В кошику  од. на суму  грн.
DSB60C45PB DSB60C45PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA7395DEAFF8BF&compId=DSB60C45PB.pdf?ci_sign=1ff325bc90927c6040ff341798c54a4ccf48d453 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Power dissipation: 145W
Max. forward impulse current: 490A
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DSB60C60PB DSB60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA8FDA8EAAB8BF&compId=DSB60C60PB.pdf?ci_sign=e35bd84c9be13dc65ec03afa6d1fddeb9130d9e2 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Power dissipation: 145W
Max. forward impulse current: 490A
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DPG60C300HJ DPG60C300HJ IXYS Littelfuse-Power-Semiconductors-DPG60C300HJ-Datasheet?assetguid=75018E55-B8E7-4BF6-ACE8-4E6EDD4B5031 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS247™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.26V
Load current: 30A x2
Max. off-state voltage: 300V
Power dissipation: 145W
Max. forward impulse current: 0.45kA
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IXFK44N50 IXFK44N50 IXYS pVersion=0046&contRep=ZT&docId=E291FBCEC3F0FDF19A99005056AB752F&compId=93001.pdf?ci_sign=78d733b99a17cf6c7997e90fc07c9bc206d19d8b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 520W; TO264; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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CPC1510GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 15Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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MCD200-16IO1 MCD200-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A018B9F0C0BE27&compId=MCD200-16IO1-DTE.pdf?ci_sign=a7d3e8c4cf9fd900d3d4325b9ea25c10a7b2d2b4 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 216A
Max. load current: 340A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+5775.82 грн
В кошику  од. на суму  грн.
MDMA900U1600PTEH IXYS MDMA900U1600PTEH.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 900A; Ifsm: 8kA; module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 900A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Version: module
Case: E3-Pack
Mechanical mounting: screw
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CPC1560GS CPC1560GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Contacts configuration: SPST-NO
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CPC1560GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Contacts configuration: SPST-NO
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DSA20C150PN DSA20C150PN IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C91994C74678BF&compId=DSA20C150PN.pdf?ci_sign=00dda16ec67eb23b64143f0f62215a30665374ae Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.73V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.73V
Max. forward impulse current: 220A
Load current: 10A x2
Max. off-state voltage: 150V
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
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IXFN420N10T IXFN420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3 Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 670nC
Kind of channel: enhancement
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
1+1894.23 грн
2+1663.72 грн
10+1599.46 грн
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IXFT120N15P IXFT120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Drain-source voltage: 150V
Drain current: 120A
Case: TO268
On-state resistance: 16mΩ
Power dissipation: 600W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±20V
Kind of package: tube
Reverse recovery time: 200ns
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 150nC
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+809.13 грн
2+493.48 грн
6+466.51 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV IXFT120N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Drain-source voltage: 250V
Drain current: 120A
Case: TO268HV
On-state resistance: 12mΩ
Power dissipation: 480W
Kind of package: tube
Reverse recovery time: 140ns
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 122nC
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+885.17 грн
2+680.72 грн
4+643.43 грн
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IXXN200N60C3H1 IXXN200N60C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F323B2A9A45820&compId=IXXN200N60C3H1.pdf?ci_sign=c226e5dec3e51a0405118c87d36ddf9c69c0fdda Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
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IXTK102N65X2 IXTK102N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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CPC1130NTR CPC1130NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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IXGX55N120A3H1 IXGX55N120A3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Collector current: 55A
Gate-emitter voltage: ±20V
Power dissipation: 460W
Pulsed collector current: 400A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
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IXYN85N120C4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1FD09BD40F73777C80E1&compId=IXYN85N120C4H1.pdf?ci_sign=aab417eea0514b6583e79adf046c9f236adf1df5 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 600W
Pulsed collector current: 420A
Max. off-state voltage: 1.2kV
Technology: GenX4™; XPT™
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CLA5E1200PZ-TUB CLA5E1200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BBF406A5A0C4&compId=CLA5E1200PZ.pdf?ci_sign=44c33192702f8a7210afc6a9e6ef8b60f9b83fb2 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
2+224.71 грн
3+188.82 грн
7+153.12 грн
17+145.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DHG10I1200PA DHG10I1200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3EDC532694143&compId=DHG10I1200PA.pdf?ci_sign=ff3d10ce111358f641abd5b1e2ef9390ef4a4d84 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
3+184.55 грн
10+98.38 грн
26+93.62 грн
50+89.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DHG10I1200PM DHG10I1200PM IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3F9058C8CE143&compId=DHG10I1200PM.pdf?ci_sign=620817a1ba2738c57110b9b1eaf322e1df25ea0f Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
3+195.66 грн
9+105.52 грн
25+99.97 грн
Мінімальне замовлення: 3
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CLB30I1200PZ-TUB CLB30I1200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BF9A635F80C4&compId=CLB30I1200PZ.pdf?ci_sign=a1f9b4639a575365c028e15a3311ad9611b93dcf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
2+235.82 грн
3+196.76 грн
6+156.30 грн
17+147.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DHG20I1200PA DHG20I1200PA IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA458EA2E67E143&compId=DHG20I1200PA.pdf?ci_sign=ef08cbc9c09bd8d954098eca0be066af8cb17d7d Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
2+264.01 грн
6+155.50 грн
17+146.78 грн
Мінімальне замовлення: 2
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CLA30E1200PC-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
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CLB40I1200PZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5C2D706AE40C4&compId=CLB40I1200PZ.pdf?ci_sign=4c955e440d6a4040b6e0c8bf818da052a9032f9e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
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CLE30E1200PB CLE30E1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9951565917E60C7&compId=CLE30E1200PB.pdf?ci_sign=8096ad1f70f141440554072b6ca52c4f2dc2f30e Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
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IXA20I1200PB IXA20I1200PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB8BBC3A9FB820&compId=IXA20I1200PB.pdf?ci_sign=6dd16cf67d25fa1a3938eb8ec45c2d995057c8f8 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
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MIXA80W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: XPT™
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG120W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG180W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG490PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
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IXTP08N100P IXTP08N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO220AB
на замовлення 292 шт:
термін постачання 21-30 дні (днів)
3+138.84 грн
10+103.14 грн
25+97.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFL38N100P IXFL38N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA0D820&compId=IXFL38N100P.pdf?ci_sign=94929944ea010461ba73f32c37d8eedfcfafaddd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.35µC
On-state resistance: 0.23Ω
Drain current: 29A
Power dissipation: 520W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: ISOPLUS i5-pac™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+921.06 грн
В кошику  од. на суму  грн.
IXTA08N100D2HV IXTA08N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7BD820&compId=IXTA08N100D2HV.pdf?ci_sign=3be54c5ad37749ff2e0bd8c4de040e221ab922e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 325nC
On-state resistance: 21Ω
Drain current: 0.8A
Power dissipation: 60W
Drain-source voltage: 1kV
Kind of channel: depletion
Case: TO263HV
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IXFH18N100Q3 IXFH18N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO247-3
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IXFN38N100P IXFN38N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7720FEE265820&compId=IXFN38N100P.pdf?ci_sign=8127a5e23ad1ce6b02da77b9e7e36fc590b8522a Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 0.35µC
Reverse recovery time: 300ns
On-state resistance: 0.21Ω
Drain current: 38A
Gate-source voltage: ±40V
Pulsed drain current: 120A
Power dissipation: 1kW
Drain-source voltage: 1kV
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: SOT227B
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DSEP30-06BR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEE50238512143&compId=DSEP30-06BR.pdf?ci_sign=8fe33b0a2e535ec1dd571a8e494d41ae71ddc313
DSEP30-06BR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; ISOPLUS247™
Kind of package: tube
Mounting: THT
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Case: ISOPLUS247™
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 1.61V
Power dissipation: 135W
Load current: 30A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
на замовлення 56 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+582.71 грн
3+363.37 грн
8+343.53 грн
10+340.36 грн
30+330.05 грн
В кошику  од. на суму  грн.
CPC1705Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147DD40C7&compId=CPC1705y.pdf?ci_sign=9a0e8e0330114c6075c230c6290a49adb090967b
CPC1705Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 2ms
Turn-off time: 12ms
Contacts configuration: SPST-NC
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
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FDA217 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Operating temperature: -40...85°C
Case: DIP8
Type of integrated circuit: driver
Kind of package: tube
Mounting: THT
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+284.52 грн
5+186.44 грн
14+176.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDA217S pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217S
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+244.36 грн
3+210.25 грн
5+197.55 грн
6+185.65 грн
10+176.92 грн
14+175.34 грн
20+168.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDA217STR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217STR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Operating temperature: -40...85°C
Case: SO8
Type of integrated circuit: driver
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
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FDM47-06KC5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F363DA39EA5820&compId=FDM47-06KC5.pdf?ci_sign=01c8a9463d526f84120914de2773f068278b2c9b
FDM47-06KC5
+1
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 32A
Mounting: THT
Topology: buck chopper
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Semiconductor structure: diode/transistor
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: super junction coolmos
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 45mΩ
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 600V
Case: ISOPLUS i4-pac™ x024a
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+667.30 грн
3+591.07 грн
10+568.06 грн
В кошику  од. на суму  грн.
FMD15-06KC5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F522E6E4505820&compId=FMD15-06KC5.pdf?ci_sign=2f4352c0a860f23fb93ad3877941b2c9bd4b7589
FMD15-06KC5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Topology: boost chopper
Features of semiconductor devices: super junction coolmos
Gate charge: 40nC
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1052.64 грн
3+924.29 грн
В кошику  од. на суму  грн.
PLB150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13
PLB150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
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PLB150STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
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IXGP48N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff
IXGP48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXTA1N200P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDCB63FB405820&compId=IXTA(H)1N200P3HV.pdf?ci_sign=deac538022c3e7b6cce7ceee522f5c545d6ce7d6
IXTA1N200P3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO263HV
Polarisation: unipolar
Reverse recovery time: 2.3µs
Drain current: 1A
On-state resistance: 40Ω
Power dissipation: 125W
Drain-source voltage: 2kV
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IXTH1N200P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDCB63FB405820&compId=IXTA(H)1N200P3HV.pdf?ci_sign=deac538022c3e7b6cce7ceee522f5c545d6ce7d6
IXTH1N200P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Polarisation: unipolar
Reverse recovery time: 2.3µs
Drain current: 1A
On-state resistance: 40Ω
Power dissipation: 125W
Drain-source voltage: 2kV
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IXTH1N200P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDCB63FB405820&compId=IXTA(H)1N200P3HV.pdf?ci_sign=deac538022c3e7b6cce7ceee522f5c545d6ce7d6
IXTH1N200P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Polarisation: unipolar
Reverse recovery time: 2.3µs
Drain current: 1A
On-state resistance: 40Ω
Power dissipation: 125W
Drain-source voltage: 2kV
товару немає в наявності
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MCC95-16io1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B6E43AC9E8AA0A18&compId=MCC95-16io1B.pdf?ci_sign=e9bfa8afaf0bdcd7ce82437234dbb70dcd776912 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC95-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
Kind of package: bulk
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2662.35 грн
5+2460.28 грн
36+2377.77 грн
В кошику  од. на суму  грн.
IXTH75N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993960D1A4DD498BF&compId=IXT_75N10L2.pdf?ci_sign=14d46f1640fe8dff3fd9c2e86627011d0edde846
IXTH75N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 75A; 400W; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: THT
Gate charge: 215nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: Linear L2™
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LOC112P pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112P
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 3.75kV; Flatpack 8pin
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Kind of output: photodiode
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.21 грн
В кошику  од. на суму  грн.
MCMA260PD1800YB pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Case: Y4-M6
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.06V
Max. off-state voltage: 1.8kV
Load current: 260A
Max. load current: 408A
Max. forward impulse current: 8.3kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
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MCMA50PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD81090C28DA00C4&compId=MCMA50PD1600TB.pdf?ci_sign=92f358604823056a64eac35e07bc66d407373c74 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 50A; TO240AA; Ufmax: 1.17V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 78/200mA
Threshold on-voltage: 0.89V
Max. forward voltage: 1.17V
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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MCMA65PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8116D7636D20C4&compId=MCMA65PD1600TB.pdf?ci_sign=1a113da424381882bdb556bade45ffad1327a809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 95/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.17V
Load current: 65A
Max. load current: 105A
Max. forward impulse current: 1.15kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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CMA80PD1600NA CMA80PD1600NA.pdf
CMA80PD1600NA
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Electrical mounting: screw
Mechanical mounting: screw
Load current: 80A
Gate current: 100/200mA
Max. load current: 126A
Threshold on-voltage: 0.86V
Max. forward voltage: 1.29V
Max. forward impulse current: 1.07kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: SOT227B
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
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IXFH56N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBB8D50EDA38BF&compId=IXF_56N30X3.pdf?ci_sign=633f7ff7bbd4d5f73ecc58750c76abed9db4d947 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH56N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 115ns
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Drain current: 56A
Drain-source voltage: 300V
Power dissipation: 320W
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+657.04 грн
2+503.00 грн
6+475.24 грн
30+456.99 грн
В кошику  од. на суму  грн.
IXFH50N30Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E17586FE98BF&compId=IXFH50N30Q3_IXFT50N30Q3.pdf?ci_sign=52d892f03a88a92038e3318344d24f837885d158
IXFH50N30Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 65nC
Reverse recovery time: 250ns
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 300V
Power dissipation: 690W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+851.85 грн
2+760.85 грн
4+718.80 грн
10+691.04 грн
В кошику  од. на суму  грн.
DSB60C30PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA0D6D80B458BF&compId=DSB60C30PB.pdf?ci_sign=0a17ebb4b5d6fad1a724db90a897b139c6c3369e
DSB60C30PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 30Ax2; TO220AB; Ufmax: 0.49V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.49V
Load current: 30A x2
Max. off-state voltage: 30V
Power dissipation: 145W
Max. forward impulse current: 530A
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+106.80 грн
5+88.86 грн
10+78.54 грн
14+69.02 грн
38+65.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DPG30P300PJ media?resourcetype=datasheets&itemid=4BEC0773-2CA1-4DE0-8566-CFFCAC47A849&filename=Littelfuse-Power-Semiconductors-DPG30P300PJ-Datasheet
DPG30P300PJ
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 450A; ISOPLUS220™
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS220™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.27V
Load current: 30A
Max. off-state voltage: 300V
Power dissipation: 145W
Max. forward impulse current: 0.45kA
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+642.52 грн
3+427.63 грн
6+404.62 грн
В кошику  од. на суму  грн.
DSB60C45PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA7395DEAFF8BF&compId=DSB60C45PB.pdf?ci_sign=1ff325bc90927c6040ff341798c54a4ccf48d453
DSB60C45PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.6V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.6V
Load current: 30A x2
Max. off-state voltage: 45V
Power dissipation: 145W
Max. forward impulse current: 490A
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DSB60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CA8FDA8EAAB8BF&compId=DSB60C60PB.pdf?ci_sign=e35bd84c9be13dc65ec03afa6d1fddeb9130d9e2
DSB60C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.69V
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.69V
Load current: 30A x2
Max. off-state voltage: 60V
Power dissipation: 145W
Max. forward impulse current: 490A
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DPG60C300HJ Littelfuse-Power-Semiconductors-DPG60C300HJ-Datasheet?assetguid=75018E55-B8E7-4BF6-ACE8-4E6EDD4B5031
DPG60C300HJ
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 450A; ISOPLUS247™
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™ 2nd Gen
Case: ISOPLUS247™
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.26V
Load current: 30A x2
Max. off-state voltage: 300V
Power dissipation: 145W
Max. forward impulse current: 0.45kA
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IXFK44N50 pVersion=0046&contRep=ZT&docId=E291FBCEC3F0FDF19A99005056AB752F&compId=93001.pdf?ci_sign=78d733b99a17cf6c7997e90fc07c9bc206d19d8b
IXFK44N50
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 520W; TO264; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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CPC1510GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Operating temperature: -40...85°C
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 200mA
On-state resistance: 15Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
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MCD200-16IO1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A018B9F0C0BE27&compId=MCD200-16IO1-DTE.pdf?ci_sign=a7d3e8c4cf9fd900d3d4325b9ea25c10a7b2d2b4
MCD200-16IO1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 216A
Max. load current: 340A
Max. forward impulse current: 8kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5775.82 грн
В кошику  од. на суму  грн.
MDMA900U1600PTEH MDMA900U1600PTEH.pdf
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 900A; Ifsm: 8kA; module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 900A
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Version: module
Case: E3-Pack
Mechanical mounting: screw
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CPC1560GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1
CPC1560GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Contacts configuration: SPST-NO
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CPC1560GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Contacts configuration: SPST-NO
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DSA20C150PN pVersion=0046&contRep=ZT&docId=005056AB82531EE991C91994C74678BF&compId=DSA20C150PN.pdf?ci_sign=00dda16ec67eb23b64143f0f62215a30665374ae
DSA20C150PN
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220FP; Ufmax: 0.73V
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.73V
Max. forward impulse current: 220A
Load current: 10A x2
Max. off-state voltage: 150V
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
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IXFN420N10T pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AC87B9628D208143&compId=IXFN420N10T.pdf?ci_sign=b6ca25fc8c12b8d526ebadade3bda0c6322075d3
IXFN420N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 670nC
Kind of channel: enhancement
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1894.23 грн
2+1663.72 грн
10+1599.46 грн
В кошику  од. на суму  грн.
IXFT120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFT120N15P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Drain-source voltage: 150V
Drain current: 120A
Case: TO268
On-state resistance: 16mΩ
Power dissipation: 600W
Technology: HiPerFET™; PolarHT™
Gate-source voltage: ±20V
Kind of package: tube
Reverse recovery time: 200ns
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 150nC
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+809.13 грн
2+493.48 грн
6+466.51 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa
IXFT120N25X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Drain-source voltage: 250V
Drain current: 120A
Case: TO268HV
On-state resistance: 12mΩ
Power dissipation: 480W
Kind of package: tube
Reverse recovery time: 140ns
Mounting: SMD
Type of transistor: N-MOSFET
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 122nC
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+885.17 грн
2+680.72 грн
4+643.43 грн
В кошику  од. на суму  грн.
IXXN200N60C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F323B2A9A45820&compId=IXXN200N60C3H1.pdf?ci_sign=c226e5dec3e51a0405118c87d36ddf9c69c0fdda
IXXN200N60C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
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IXTK102N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A30509622B9820&compId=IXTK(X)102N65X2.pdf?ci_sign=179728ba4b6154ce0a3f464c48ebd958f7ec0bd6
IXTK102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 102A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 450ns
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CPC1130NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20CC0C7&compId=CPC1130N.pdf?ci_sign=44150b4b94226c50a67f054d89a376cc555a5c6e
CPC1130NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
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IXGX55N120A3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD6CE88C967820&compId=IXGK(X)55N120A3H1.pdf?ci_sign=71c157a42906878436bf546790bc3e7783e519ba
IXGX55N120A3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Collector current: 55A
Gate-emitter voltage: ±20V
Power dissipation: 460W
Pulsed collector current: 400A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; PT
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IXYN85N120C4H1 pVersion=0046&contRep=ZT&docId=005056AB281E1FD09BD40F73777C80E1&compId=IXYN85N120C4H1.pdf?ci_sign=aab417eea0514b6583e79adf046c9f236adf1df5
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 600W
Pulsed collector current: 420A
Max. off-state voltage: 1.2kV
Technology: GenX4™; XPT™
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CLA5E1200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BBF406A5A0C4&compId=CLA5E1200PZ.pdf?ci_sign=44c33192702f8a7210afc6a9e6ef8b60f9b83fb2
CLA5E1200PZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+224.71 грн
3+188.82 грн
7+153.12 грн
17+145.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DHG10I1200PA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3EDC532694143&compId=DHG10I1200PA.pdf?ci_sign=ff3d10ce111358f641abd5b1e2ef9390ef4a4d84
DHG10I1200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+184.55 грн
10+98.38 грн
26+93.62 грн
50+89.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DHG10I1200PM pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA3F9058C8CE143&compId=DHG10I1200PM.pdf?ci_sign=620817a1ba2738c57110b9b1eaf322e1df25ea0f
DHG10I1200PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+195.66 грн
9+105.52 грн
25+99.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CLB30I1200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5BF9A635F80C4&compId=CLB30I1200PZ.pdf?ci_sign=a1f9b4639a575365c028e15a3311ad9611b93dcf
CLB30I1200PZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+235.82 грн
3+196.76 грн
6+156.30 грн
17+147.57 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DHG20I1200PA pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFA458EA2E67E143&compId=DHG20I1200PA.pdf?ci_sign=ef08cbc9c09bd8d954098eca0be066af8cb17d7d
DHG20I1200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+264.01 грн
6+155.50 грн
17+146.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA30E1200PC-TRL
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
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CLB40I1200PZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB5C2D706AE40C4&compId=CLB40I1200PZ.pdf?ci_sign=4c955e440d6a4040b6e0c8bf818da052a9032f9e
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
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CLE30E1200PB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA9951565917E60C7&compId=CLE30E1200PB.pdf?ci_sign=8096ad1f70f141440554072b6ca52c4f2dc2f30e
CLE30E1200PB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
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IXA20I1200PB pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB8BBC3A9FB820&compId=IXA20I1200PB.pdf?ci_sign=6dd16cf67d25fa1a3938eb8ec45c2d995057c8f8
IXA20I1200PB
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
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MIXA80W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: XPT™
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG120W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG180W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 195A
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG490PF1200PTSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Technology: X2PT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: IGBT half-bridge; NTC thermistor
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IXTP08N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a
IXTP08N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO220AB; 750ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO220AB
на замовлення 292 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+138.84 грн
10+103.14 грн
25+97.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFL38N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA0D820&compId=IXFL38N100P.pdf?ci_sign=94929944ea010461ba73f32c37d8eedfcfafaddd
IXFL38N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 29A; 520W; ISOPLUS i5-pac™
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.35µC
On-state resistance: 0.23Ω
Drain current: 29A
Power dissipation: 520W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: ISOPLUS i5-pac™
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+921.06 грн
В кошику  од. на суму  грн.
IXTA08N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7BD820&compId=IXTA08N100D2HV.pdf?ci_sign=3be54c5ad37749ff2e0bd8c4de040e221ab922e4
IXTA08N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 325nC
On-state resistance: 21Ω
Drain current: 0.8A
Power dissipation: 60W
Drain-source voltage: 1kV
Kind of channel: depletion
Case: TO263HV
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IXFH18N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8
IXFH18N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO247-3
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IXFN38N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA7720FEE265820&compId=IXFN38N100P.pdf?ci_sign=8127a5e23ad1ce6b02da77b9e7e36fc590b8522a
IXFN38N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 120A
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 0.35µC
Reverse recovery time: 300ns
On-state resistance: 0.21Ω
Drain current: 38A
Gate-source voltage: ±40V
Pulsed drain current: 120A
Power dissipation: 1kW
Drain-source voltage: 1kV
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Case: SOT227B
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