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BCR148E6327 BCR148E6327 INFINEON TECHNOLOGIES BCR148.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 100MHz
на замовлення 7265 шт:
термін постачання 21-30 дні (днів)
74+5.64 грн
100+4.72 грн
248+3.62 грн
680+3.42 грн
3000+3.37 грн
Мінімальне замовлення: 74
В кошику  од. на суму  грн.
BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 200MHz
на замовлення 4850 шт:
термін постачання 21-30 дні (днів)
92+4.52 грн
102+3.77 грн
250+3.33 грн
310+2.89 грн
851+2.74 грн
3000+2.70 грн
Мінімальне замовлення: 92
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IRFL024ZTRPBF IRFL024ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE3F07F0275EA&compId=IRFL024ZTRPBF.pdf?ci_sign=8c23d246f7a2ed4b15ce6df643c8a84d048dd9c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY15B004J-SXA INFINEON TECHNOLOGIES Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Memory: 4kb FRAM
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CY15B004J-SXAT INFINEON TECHNOLOGIES Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 4kb FRAM
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CY15B004J-SXE INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Memory: 4kb FRAM
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CY15B004J-SXET INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Kind of package: reel; tape
Memory: 4kb FRAM
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CY15B004Q-SXET INFINEON TECHNOLOGIES CY15B004Q_RevC_6-4-19.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Kind of package: reel; tape
Memory: 4kb FRAM
товару немає в наявності
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ICE5QR2280AZXKLA1
+1
 		ICE5QR2280AZXKLA1 INFINEON TECHNOLOGIES ICE5QRxxxxAx.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.4A
Frequency: 20kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 41/22W
Application: SMPS
Operating voltage: 10...25.5V DC
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BTS500101TAEATMA1
+1
 		BTS500101TAEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D9856FE6F5F8BF&compId=BTS500101TAE.pdf?ci_sign=5d0a2bebb22f6dcba9d96688de2a190e13c6a6f8 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
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IRF7769L2TRPBF IRF7769L2TRPBF INFINEON TECHNOLOGIES irf7769l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
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IRFH8324TRPBF IRFH8324TRPBF INFINEON TECHNOLOGIES irfh8324pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
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BTS50085-1TMA BTS50085-1TMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586988A710BC62469&compId=BTS50085-1TMA.pdf?ci_sign=75945b08cb5cb70d233c56683d743ba7b1f0d4d8 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
на замовлення 940 шт:
термін постачання 21-30 дні (днів)
1+629.69 грн
3+366.31 грн
7+346.38 грн
500+333.36 грн
В кошику  од. на суму  грн.
IPP200N25N3GXKSA1 IPP200N25N3GXKSA1 INFINEON TECHNOLOGIES IPP200N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BFR181E6327HTSA1 BFR181E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Case: SOT23
Frequency: 8GHz
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 20mA
Power dissipation: 0.175W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
на замовлення 1455 шт:
термін постачання 21-30 дні (днів)
14+31.36 грн
19+20.61 грн
25+16.02 грн
100+10.73 грн
128+7.05 грн
353+6.67 грн
1000+6.59 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
CY7C1381KVE33-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1381KVE33-133AXM INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; in-tray
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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CY7C1383KVE33-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
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IRFR13N20DTRPBF IRFR13N20DTRPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
20+21.46 грн
29+13.49 грн
35+11.19 грн
52+7.43 грн
100+6.44 грн
198+4.55 грн
542+4.31 грн
3000+4.30 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRLR3915TRPBF IRLR3915TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF127303F0515EA&compId=IRLR3915TRPBF.pdf?ci_sign=2a546e3321d7785d96f1b8df8cb817a035b9b316 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES BSS806NEH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
на замовлення 9223 шт:
термін постачання 21-30 дні (днів)
18+23.93 грн
23+17.17 грн
31+12.49 грн
59+6.53 грн
213+4.21 грн
585+3.98 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSC0503NSIATMA1 BSC0503NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F97603E5E11C&compId=BSC0503NSI-DTE.pdf?ci_sign=a6a74026fb5f694d37118891f31071200b7efebf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BA885E6327 BA885E6327 INFINEON TECHNOLOGIES BAx95-DTE.pdf Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.19...0.45pF
на замовлення 1333 шт:
термін постачання 21-30 дні (днів)
107+3.88 грн
109+3.53 грн
Мінімальне замовлення: 107
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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES irfl4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 934 шт:
термін постачання 21-30 дні (днів)
7+59.42 грн
11+35.10 грн
25+29.89 грн
40+22.68 грн
109+21.46 грн
Мінімальне замовлення: 7
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D950ECCBD011C&compId=BSC109N10NS3G-DTE.pdf?ci_sign=73b03e08e383856ad99c6b662e0bfa1e3d0a5de9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 63A
On-state resistance: 10.9mΩ
Type of transistor: N-MOSFET
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IRFH7084TRPBF IRFH7084TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB7F1D55815EA&compId=IRFH7084TRPBF.pdf?ci_sign=4088043b4ac252e329b7fa435263384b9d251a79 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 40V
Drain current: 40A
Type of transistor: N-MOSFET
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.1A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
28+14.86 грн
38+10.19 грн
48+8.12 грн
57+6.73 грн
100+5.59 грн
293+3.07 грн
805+2.90 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
IRF3805PBF IRF3805PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
2+275.64 грн
8+122.61 грн
21+115.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF3805STRL-7PP IRF3805STRL-7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
товару немає в наявності
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IRF3610STRLPBF IRF3610STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
товару немає в наявності
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TLE7258SJXUMA1 TLE7258SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
на замовлення 2436 шт:
термін постачання 21-30 дні (днів)
6+69.32 грн
10+55.02 грн
26+34.79 грн
71+32.88 грн
1000+31.65 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSL308CH6327XTSA1 BSL308CH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C268337EC5A469&compId=BSL308CH6327XTSA1.pdf?ci_sign=430b0b1a21988d263243bd67514e95e08e773e1e Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.3/-2A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 67/88mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
на замовлення 2927 шт:
термін постачання 21-30 дні (днів)
10+42.91 грн
14+29.20 грн
50+22.76 грн
65+13.87 грн
179+13.18 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IPB035N08N3GATMA1 IPB035N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB3C44E35211C&compId=IPB035N08N3G-DTE.pdf?ci_sign=21c5de3139bc2864bea66c1d6aed3968809828d3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
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BSC105N10LSFGATMA1 BSC105N10LSFGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D78CCFF2B411C&compId=BSC105N10LSFG-DTE.pdf?ci_sign=32f6b127d23e115ccf0cd1ecc059a3e7f4f9f4b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Mounting: SMD
Power dissipation: 156W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 90A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
товару немає в наявності
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IPP60R190C6XKSA1 IPP60R190C6XKSA1 INFINEON TECHNOLOGIES IPP60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
2+325.99 грн
3+267.45 грн
4+231.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI60R190C6XKSA1 IPI60R190C6XKSA1 INFINEON TECHNOLOGIES IPI60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
2+271.52 грн
3+216.11 грн
6+160.93 грн
16+152.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R190C6XKSA1 IPA60R190C6XKSA1 INFINEON TECHNOLOGIES IPA60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R190C6ATMA1 IPB60R190C6ATMA1 INFINEON TECHNOLOGIES IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF40R207 IRF40R207 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDD1A753CD6143&compId=IRF40R207.pdf?ci_sign=4cd6fca78f66572d898b62deac93256e3bb94244 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
на замовлення 1613 шт:
термін постачання 21-30 дні (днів)
10+41.26 грн
42+21.76 грн
115+20.54 грн
1000+20.31 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRF40B207 IRF40B207 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDC51618816143&compId=IRF40B207.pdf?ci_sign=12d3808b9e66cb40651b76a6f2b50069792efd39 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
5+82.53 грн
10+43.91 грн
24+37.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF4104SPBF IRF4104SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AFDF1A6F5005056AB5A8F&compId=irf4104pbf.pdf?ci_sign=f0fcb18ac4d96c500ada290fbd86ef9075b7a444 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
4+112.24 грн
5+94.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF40H233XTMA1 INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIRF4104STRL AUIRF4104STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 68nC
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IPA029N06NM5SXKSA1 IPA029N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA029N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd953036de6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 62A
On-state resistance: 2.9mΩ
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 348A
Mounting: THT
товару немає в наявності
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IPA029N06NXKSA1 IPA029N06NXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9A22A0BCC611C&compId=IPA029N06N-DTE.pdf?ci_sign=4e32dd0b737f81c4c8566e7944d7fb75b98faf4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 2.9mΩ
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
товару немає в наявності
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S29AL016J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J55FFAR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J55TFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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CY62138FV30LL-45ZXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62138FV30LL-45ZXI INFINEON TECHNOLOGIES Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
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IPP60R060P7 IPP60R060P7 INFINEON TECHNOLOGIES IPP60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES IPW60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R190E6FKSA1 IPW60R190E6FKSA1 INFINEON TECHNOLOGIES IPW60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES IPP60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R190E6XKSA1 IPA60R190E6XKSA1 INFINEON TECHNOLOGIES IPA60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPDD60R190G7XTMA1 INFINEON TECHNOLOGIES IPDD60R190G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 36A
Power dissipation: 76W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPP60R022S7XKSA1 IPP60R022S7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
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BCR148E6327 BCR148.pdf
BCR148E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 100MHz
на замовлення 7265 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
74+5.64 грн
100+4.72 грн
248+3.62 грн
680+3.42 грн
3000+3.37 грн
Мінімальне замовлення: 74
В кошику  од. на суму  грн.
BCR185E6327 BCR185.pdf
BCR185E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 200MHz
на замовлення 4850 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
92+4.52 грн
102+3.77 грн
250+3.33 грн
310+2.89 грн
851+2.74 грн
3000+2.70 грн
Мінімальне замовлення: 92
В кошику  од. на суму  грн.
IRFL024ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE3F07F0275EA&compId=IRFL024ZTRPBF.pdf?ci_sign=8c23d246f7a2ed4b15ce6df643c8a84d048dd9c2
IRFL024ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY15B004J-SXA Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Memory: 4kb FRAM
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CY15B004J-SXAT Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOIC8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Kind of package: reel; tape
Memory: 4kb FRAM
товару немає в наявності
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CY15B004J-SXE Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Memory: 4kb FRAM
товару немає в наявності
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CY15B004J-SXET Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Kind of package: reel; tape
Memory: 4kb FRAM
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CY15B004Q-SXET CY15B004Q_RevC_6-4-19.pdf
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Case: SOIC8
Supply voltage: 3...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Kind of package: reel; tape
Memory: 4kb FRAM
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ICE5QR2280AZXKLA1 ICE5QRxxxxAx.pdf
ICE5QR2280AZXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.4A
Frequency: 20kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 41/22W
Application: SMPS
Operating voltage: 10...25.5V DC
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BTS500101TAEATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D9856FE6F5F8BF&compId=BTS500101TAE.pdf?ci_sign=5d0a2bebb22f6dcba9d96688de2a190e13c6a6f8
BTS500101TAEATMA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
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IRF7769L2TRPBF irf7769l2pbf.pdf
IRF7769L2TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 124A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 124A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 125W
Technology: HEXFET®
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IRFH8324TRPBF irfh8324pbf.pdf
IRFH8324TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Case: PQFN5X6
Drain-source voltage: 30V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
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BTS50085-1TMA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586988A710BC62469&compId=BTS50085-1TMA.pdf?ci_sign=75945b08cb5cb70d233c56683d743ba7b1f0d4d8
BTS50085-1TMA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
на замовлення 940 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+629.69 грн
3+366.31 грн
7+346.38 грн
500+333.36 грн
В кошику  од. на суму  грн.
IPP200N25N3GXKSA1 IPP200N25N3G-DTE.pdf
IPP200N25N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BFR181E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A313F6F3849820&compId=BFR181.pdf?ci_sign=38a950279fd876c36adcfab0661237d340b91310
BFR181E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Case: SOT23
Frequency: 8GHz
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 20mA
Power dissipation: 0.175W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
на замовлення 1455 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.36 грн
19+20.61 грн
25+16.02 грн
100+10.73 грн
128+7.05 грн
353+6.67 грн
1000+6.59 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
CY7C1381KVE33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
товару немає в наявності
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CY7C1381KVE33-133AXM
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; in-tray
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
товару немає в наявності
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CY7C1383KVE33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
товару немає в наявності
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IRFR13N20DTRPBF irfr13n20dpbf.pdf
IRFR13N20DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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BAS4007WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4007WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT343
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward impulse current: 0.2A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.46 грн
29+13.49 грн
35+11.19 грн
52+7.43 грн
100+6.44 грн
198+4.55 грн
542+4.31 грн
3000+4.30 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRLR3915TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF127303F0515EA&compId=IRLR3915TRPBF.pdf?ci_sign=2a546e3321d7785d96f1b8df8cb817a035b9b316
IRLR3915TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1.pdf
BSS806NEH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 82mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±8V
на замовлення 9223 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.93 грн
23+17.17 грн
31+12.49 грн
59+6.53 грн
213+4.21 грн
585+3.98 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSC0503NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2F97603E5E11C&compId=BSC0503NSI-DTE.pdf?ci_sign=a6a74026fb5f694d37118891f31071200b7efebf
BSC0503NSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
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BA885E6327 BAx95-DTE.pdf
BA885E6327
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.19...0.45pF
на замовлення 1333 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
107+3.88 грн
109+3.53 грн
Мінімальне замовлення: 107
В кошику  од. на суму  грн.
IRFL4105TRPBF irfl4105pbf.pdf
IRFL4105TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 934 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+59.42 грн
11+35.10 грн
25+29.89 грн
40+22.68 грн
109+21.46 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSC109N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D950ECCBD011C&compId=BSC109N10NS3G-DTE.pdf?ci_sign=73b03e08e383856ad99c6b662e0bfa1e3d0a5de9
BSC109N10NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 63A
On-state resistance: 10.9mΩ
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IRFH7084TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB7F1D55815EA&compId=IRFH7084TRPBF.pdf?ci_sign=4088043b4ac252e329b7fa435263384b9d251a79
IRFH7084TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: 40V
Drain current: 40A
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
BAS7005WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7005WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward impulse current: 0.1A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+14.86 грн
38+10.19 грн
48+8.12 грн
57+6.73 грн
100+5.59 грн
293+3.07 грн
805+2.90 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
IRF3805PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d
IRF3805PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+275.64 грн
8+122.61 грн
21+115.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF3805STRL-7PP pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41
IRF3805STRL-7PP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
IRF3610STRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1
IRF3610STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
товару немає в наявності
В кошику  од. на суму  грн.
TLE7258SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8
TLE7258SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
на замовлення 2436 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+69.32 грн
10+55.02 грн
26+34.79 грн
71+32.88 грн
1000+31.65 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSL308CH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C268337EC5A469&compId=BSL308CH6327XTSA1.pdf?ci_sign=430b0b1a21988d263243bd67514e95e08e773e1e
BSL308CH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.3/-2A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 67/88mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
на замовлення 2927 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.91 грн
14+29.20 грн
50+22.76 грн
65+13.87 грн
179+13.18 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IPB035N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB3C44E35211C&compId=IPB035N08N3G-DTE.pdf?ci_sign=21c5de3139bc2864bea66c1d6aed3968809828d3
IPB035N08N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
BSC105N10LSFGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D78CCFF2B411C&compId=BSC105N10LSFG-DTE.pdf?ci_sign=32f6b127d23e115ccf0cd1ecc059a3e7f4f9f4b8
BSC105N10LSFGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Mounting: SMD
Power dissipation: 156W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 90A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R190C6XKSA1 IPP60R190C6-DTE.pdf
IPP60R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+325.99 грн
3+267.45 грн
4+231.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI60R190C6XKSA1 IPI60R190C6-DTE.pdf
IPI60R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+271.52 грн
3+216.11 грн
6+160.93 грн
16+152.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA60R190C6XKSA1 IPA60R190C6-DTE.pdf
IPA60R190C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R190C6ATMA1 IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a
IPB60R190C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF40R207 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDD1A753CD6143&compId=IRF40R207.pdf?ci_sign=4cd6fca78f66572d898b62deac93256e3bb94244
IRF40R207
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
на замовлення 1613 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+41.26 грн
42+21.76 грн
115+20.54 грн
1000+20.31 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRF40B207 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDC51618816143&compId=IRF40B207.pdf?ci_sign=12d3808b9e66cb40651b76a6f2b50069792efd39
IRF40B207
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+82.53 грн
10+43.91 грн
24+37.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRF4104SPBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7AFDF1A6F5005056AB5A8F&compId=irf4104pbf.pdf?ci_sign=f0fcb18ac4d96c500ada290fbd86ef9075b7a444
IRF4104SPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+112.24 грн
5+94.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF4104STRL pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156
AUIRF4104STRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 68nC
товару немає в наявності
В кошику  од. на суму  грн.
IPA029N06NM5SXKSA1 Infineon-IPA029N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd953036de6
IPA029N06NM5SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 62A
On-state resistance: 2.9mΩ
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 348A
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IPA029N06NXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9A22A0BCC611C&compId=IPA029N06N-DTE.pdf?ci_sign=4e32dd0b737f81c4c8566e7944d7fb75b98faf4b
IPA029N06NXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 2.9mΩ
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J55BFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
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S29AL016J55FFAR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
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S29AL016J55TFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J55TFIR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
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S29AL016J55TFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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CY62138FV30LL-45ZXIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62138FV30LL-45ZXI Infineon-CY62138FV30_MoBL_2-Mbit_(256_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea2bb3263&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Kind of package: in-tray
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IPP60R060P7 IPP60R060P7.pdf
IPP60R060P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R190P6FKSA1 IPW60R190P6-DTE.pdf
IPW60R190P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R190E6FKSA1 IPW60R190E6-DTE.pdf
IPW60R190E6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R190E6XKSA1 IPP60R190E6-DTE.pdf
IPP60R190E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R190E6XKSA1 IPA60R190E6-DTE.pdf
IPA60R190E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPDD60R190G7XTMA1 IPDD60R190G7.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 36A
Power dissipation: 76W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
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