Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149438) > Сторінка 2474 з 2491

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XC8362FRIABFXUMA1 XC8362FRIABFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD69C9A36587E28&compId=XC83X-DTE.pdf?ci_sign=727cfcb1b0c7f531ebee66035cde9922c4858fde Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
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IPD80R900P7ATMA1 IPD80R900P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA531EA7A68A143&compId=IPD80R900P7.pdf?ci_sign=af71fb00aaf71f68f1b9472ad9adb4d9ef96b672 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 800V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)
4+114.25 грн
10+69.51 грн
22+43.47 грн
59+41.09 грн
500+39.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBBDDABCB60143&compId=IPU80R900P7.pdf?ci_sign=3a807cce8c544f1ff3fcc5744c8985b6833e01c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
6+80.15 грн
10+61.44 грн
23+40.77 грн
63+38.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
8+49.09 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPD900P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD900P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2f59100ba Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 16.4A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 90Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+23.70 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPS70R900P7SAKMA1 INFINEON TECHNOLOGIES infineon-ips70r900p7s-ds-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 943 шт:
термін постачання 21-30 дні (днів)
75+17.90 грн
Мінімальне замовлення: 75
В кошику  од. на суму  грн.
CY7C1021DV33-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files description Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
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CY7C1021DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
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CY7C1021DV33-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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CY7C1021DV33-10BVXIT INFINEON TECHNOLOGIES Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A391E6B471BF&compId=IPP60R099P6-DTE.pdf?ci_sign=6378e662d8a8fbcb13cbf52bee33edeeb3c53f18 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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ICL8001GXUMA1 ICL8001GXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDC0A24EAB91E27&compId=ICL8001G-DTE.pdf?ci_sign=8c35d02c215ab6ed66d7d108d76f80643772cc2f Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Topology: flyback
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
6+68.88 грн
15+62.55 грн
41+59.38 грн
100+57.80 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
S29PL127J60BFI040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29PL127J65BFW040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 65ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: in-tray
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S29PL127J70BFI040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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IRLHM620TRPBF IRLHM620TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22277530C4B63F1A303005056AB0C4F&compId=irlhm620pbf.pdf?ci_sign=c886920d7c2600102cb1c0b26f09f61fd0a26f02 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IPP041N12N3GXKSA1 IPP041N12N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
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IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
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BGS12SN6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
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IRF8910TRPBF IRF8910TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AEDCC02BE6F1A303005056AB0C4F&compId=irf8910pbf.pdf?ci_sign=415f2761abde97419fd0b9fe620849045d4ded83 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
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IRF8910TRPBFXTMA1 INFINEON TECHNOLOGIES Infineon-IRF8910-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535610ec101d8d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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S25HS01GTDPBHI033 INFINEON TECHNOLOGIES infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25HS01GTDPMHI013 INFINEON TECHNOLOGIES en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S26HS01GTGABHA030 INFINEON TECHNOLOGIES Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
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CY9BF118SPMC-GK7FKCGE1 INFINEON TECHNOLOGIES Infineon-CY9BF116S_T_CY9BF117S_T_CY9BF118S_T_FM3_CY9B110T_Series_32-bit_Arm_Cortex_-M3_based_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede6d38635a Category: Unclassified
Description: CY9BF118SPMC-GK7FKCGE1
на замовлення 1320 шт:
термін постачання 21-30 дні (днів)
60+948.96 грн
Мінімальне замовлення: 60
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SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C871EC1151CC&compId=SPD09P06PLGBTMA1-DTE.pdf?ci_sign=159e1dd4d16b5783d745104ea92eb75c1c742566 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1747 шт:
термін постачання 21-30 дні (днів)
6+71.62 грн
10+52.57 грн
24+39.19 грн
50+38.40 грн
66+37.05 грн
100+36.18 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRG4IBC10UDPBF IRG4IBC10UDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D018C449B8F1A303005056AB0C4F&compId=irg4ibc10udpbf.pdf?ci_sign=adbf601affa76102c9e89e048093f9b57ce8b949 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4IBC30WPBF IRG4IBC30WPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D159907BB8F1A303005056AB0C4F&compId=irg4ibc30wpbf.pdf?ci_sign=6ad5941b92d9c85dc9f4d80e3abcf408dfea0596 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRG4PSH71KDPBF IRG4PSH71KDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D74DA0751DF1A303005056AB0C4F&compId=irg4psh71kdpbf.pdf?ci_sign=807edbea8fc791bb19fa6f5771a90dff64a7fca4 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFAA8ACB0415EA&compId=IRG4RC10KDTRPBF.pdf?ci_sign=2087d15123c50192bd1e99a508f775700674dc79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
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IRG4RC10UDPBF IRG4RC10UDPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D89F91A94DF1A303005056AB0C4F&compId=irg4rc10udpbf.pdf?ci_sign=f1c86d8696fdd0a1a5b6f29a51cde10d472021d7 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
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FZ400R17KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F4F7E06AE0D5&compId=FZ400R17KE4.pdf?ci_sign=3f57764cc2e603070a38fc08322d912fd1ad5e8f Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
товару немає в наявності
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XMC4502F100K768ACXQMA1 XMC4502F100K768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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XMC4500F100F768ACXQMA1 XMC4500F100F768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
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XMC4500F100K768ACXQMA1 XMC4500F100K768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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XMC4500F144K768ACXQMA1 XMC4500F144K768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
товару немає в наявності
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XMC4502F100F768ACXQMA1 XMC4502F100F768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
товару немає в наявності
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S25FL128SAGNFV001 S25FL128SAGNFV001 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Interface: QUAD SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 81 шт:
термін постачання 21-30 дні (днів)
3+167.97 грн
8+118.76 грн
22+112.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR13N20DTRPBF IRFR13N20DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C0BD90492DF1A303005056AB0C4F&compId=irfr13n20dpbf.pdf?ci_sign=09aaf56c8dfd43a96b5914bb6b2e5e8b5c844bd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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FP10R12W1T7B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-2
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1666133B1A259&compId=IPD80R1K4P7.pdf?ci_sign=6b2571a0111d4343dd05c0fe97dac72608ab0bed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
на замовлення 2450 шт:
термін постачання 21-30 дні (днів)
7+63.09 грн
8+50.35 грн
25+42.12 грн
27+34.84 грн
74+32.94 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92CF4C7E46F1CC&compId=SPD15P10PLGBTMA1-DTE.pdf?ci_sign=402130b95236a3b71feabee71e64b44e6c258ec1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)
5+87.82 грн
12+79.96 грн
25+76.80 грн
33+75.21 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1A3FFC51C4259&compId=IPD70R1K4P7S.pdf?ci_sign=e4d70d361d50f363141caf22b4555d1f6679c040 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2494 шт:
термін постачання 21-30 дні (днів)
8+53.71 грн
11+36.26 грн
41+22.88 грн
112+21.61 грн
500+20.82 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
на замовлення 2252 шт:
термін постачання 21-30 дні (днів)
8+59.68 грн
10+41.96 грн
25+36.26 грн
37+25.26 грн
102+23.83 грн
500+22.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPD60R280P7ATMA1 IPD60R280P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA470B7CA4DE143&compId=IPD60R280P7.pdf?ci_sign=2eed03d5001be500c4f619418a3d594df8c87396 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
на замовлення 2099 шт:
термін постачання 21-30 дні (днів)
3+143.24 грн
10+84.71 грн
12+79.96 грн
32+76.00 грн
50+73.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA56C197F98A143&compId=IPD90N04S404.pdf?ci_sign=140394b04014dc8900b3e909a754077d67121b81 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
Drain current: 81A
Power dissipation: 71W
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)
5+91.23 грн
6+70.46 грн
10+62.55 грн
16+59.38 грн
25+53.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRL6342TRPBF IRL6342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222762AEBD200F1A303005056AB0C4F&compId=irl6342pbf.pdf?ci_sign=7d1868b6e75e9bb5d4c0242eeca6ff6f7a7e4218 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.9A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 14.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3658 шт:
термін постачання 21-30 дні (днів)
11+39.22 грн
15+27.16 грн
40+22.56 грн
61+15.36 грн
167+14.49 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IRFS4410ZTRLPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF7495TRPBF IRF7495TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A62F61D245F1A303005056AB0C4F&compId=irf7495pbf.pdf?ci_sign=4801d8c9bb322214ec2d83b4fcdbe26c990eebc3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: SO8
Power dissipation: 2.5W
Drain current: 7.3A
Drain-source voltage: 100V
Polarisation: unipolar
Kind of package: reel
товару немає в наявності
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BFN27E6327 BFN27E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C80593550A0469&compId=BFN27.pdf?ci_sign=d47f01edfbcf13c2a2a443d063481245fbd11a2e Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: PNP
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
Collector-emitter voltage: 300V
Polarisation: bipolar
Frequency: 100MHz
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BFN27E6327HTSA1 INFINEON TECHNOLOGIES bfn27.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c2ee1c0239 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 26000 шт:
термін постачання 21-30 дні (днів)
3000+4.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IR38265MTRPBFAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE622808BB3D5&compId=IR38265M.pdf?ci_sign=1dbb08e49f01815b39ec04109f1da92968a5f623 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: I2C; PVID
Case: PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
товару немає в наявності
В кошику  од. на суму  грн.
2EDS8265HXUMA1 2EDS8265HXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Case: PG-DSO-16
Mounting: SMD
Output current: -8...4A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IRFP4768PBF IRFP4768PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A0F1A6F5005056AB5A8F&compId=irfp4768pbf.pdf?ci_sign=101d831607da7f80c0611a1c43b11586afbc5c9d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
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IPD50N04S408ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Technology: OptiMOS® -T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 7.9mΩ
Drain current: 47A
Power dissipation: 46W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
товару немає в наявності
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IPG20N04S408ATMA1 IPG20N04S408ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57AA149F9E143&compId=IPG20N04S408.pdf?ci_sign=8fef4a4a90eb99a19b047330a14f6402e403fdee Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
товару немає в наявності
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IRLHS6376TRPBF IRLHS6376TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227803AA486FF1A303005056AB0C4F&compId=irlhs6376pbf.pdf?ci_sign=b652e0e89e6483e75af20b31fb083fa4743d19b3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1.5W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 1518 шт:
термін постачання 21-30 дні (днів)
13+34.10 грн
19+21.53 грн
50+17.50 грн
61+15.36 грн
167+14.49 грн
500+14.09 грн
1000+13.93 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IRLS3036TRLPBF IRLS3036TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF13EC71480D5EA&compId=IRLS3036TRLPBF.pdf?ci_sign=e6def82b21e5fa93fe3943d78d0e0c9d31d46c3d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
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IRLS4030TRLPBF IRLS4030TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1405327EAF5EA&compId=IRLS4030TRLPBF.pdf?ci_sign=e08ef8e4ed71a18d7be89ec36c726beec3021151 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1363FB77DB5EA&compId=IRLS3034TRLPBF.pdf?ci_sign=b1cd31c779cd5fbc0f101d0a52e7c4beab36a4a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
XC8362FRIABFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD69C9A36587E28&compId=XC83X-DTE.pdf?ci_sign=727cfcb1b0c7f531ebee66035cde9922c4858fde
XC8362FRIABFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товару немає в наявності
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IPD80R900P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA531EA7A68A143&compId=IPD80R900P7.pdf?ci_sign=af71fb00aaf71f68f1b9472ad9adb4d9ef96b672
IPD80R900P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 800V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.25 грн
10+69.51 грн
22+43.47 грн
59+41.09 грн
500+39.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPU80R900P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBBDDABCB60143&compId=IPU80R900P7.pdf?ci_sign=3a807cce8c544f1ff3fcc5744c8985b6833e01c9
IPU80R900P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+80.15 грн
10+61.44 грн
23+40.77 грн
63+38.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+49.09 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPD900P06NMATMA1 Infineon-IPD900P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2f59100ba
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 16.4A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 90Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+23.70 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPS70R900P7SAKMA1 infineon-ips70r900p7s-ds-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 943 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
75+17.90 грн
Мінімальне замовлення: 75
В кошику  од. на суму  грн.
CY7C1021DV33-10VXI description Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
товару немає в наявності
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CY7C1021DV33-10BVXI Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
товару немає в наявності
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CY7C1021DV33-10VXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товару немає в наявності
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CY7C1021DV33-10BVXIT Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товару немає в наявності
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IPP60R099P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A391E6B471BF&compId=IPP60R099P6-DTE.pdf?ci_sign=6378e662d8a8fbcb13cbf52bee33edeeb3c53f18
IPP60R099P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
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ICL8001GXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDC0A24EAB91E27&compId=ICL8001G-DTE.pdf?ci_sign=8c35d02c215ab6ed66d7d108d76f80643772cc2f
ICL8001GXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Topology: flyback
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+68.88 грн
15+62.55 грн
41+59.38 грн
100+57.80 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
S29PL127J60BFI040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29PL127J65BFW040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 65ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: in-tray
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S29PL127J70BFI040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
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IRLHM620TRPBF pVersion=0046&contRep=ZT&docId=E22277530C4B63F1A303005056AB0C4F&compId=irlhm620pbf.pdf?ci_sign=c886920d7c2600102cb1c0b26f09f61fd0a26f02
IRLHM620TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
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IPP041N12N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC7293DEAA811C&compId=IPP041N12N3G-DTE.pdf?ci_sign=1cc97405361528b7e9c295ad1d3fccf8117bba59
IPP041N12N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
товару немає в наявності
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IPI041N12N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC21DBFD4B011C&compId=IPI041N12N3G-DTE.pdf?ci_sign=25bd54334b52dd5ae3f6d525c0226e6d776aae3e
IPI041N12N3GAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
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BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
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IRF8910TRPBF pVersion=0046&contRep=ZT&docId=E221AEDCC02BE6F1A303005056AB0C4F&compId=irf8910pbf.pdf?ci_sign=415f2761abde97419fd0b9fe620849045d4ded83
IRF8910TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
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IRF8910TRPBFXTMA1 Infineon-IRF8910-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535610ec101d8d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
S25HS01GTDPBHI033 infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S25HS01GTDPMHI013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S26HS01GTGABHA030 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF118SPMC-GK7FKCGE1 Infineon-CY9BF116S_T_CY9BF117S_T_CY9BF118S_T_FM3_CY9B110T_Series_32-bit_Arm_Cortex_-M3_based_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede6d38635a
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY9BF118SPMC-GK7FKCGE1
на замовлення 1320 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
60+948.96 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
SPD09P06PLGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C871EC1151CC&compId=SPD09P06PLGBTMA1-DTE.pdf?ci_sign=159e1dd4d16b5783d745104ea92eb75c1c742566
SPD09P06PLGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1747 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+71.62 грн
10+52.57 грн
24+39.19 грн
50+38.40 грн
66+37.05 грн
100+36.18 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRG4IBC10UDPBF pVersion=0046&contRep=ZT&docId=E221D018C449B8F1A303005056AB0C4F&compId=irg4ibc10udpbf.pdf?ci_sign=adbf601affa76102c9e89e048093f9b57ce8b949
IRG4IBC10UDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IRG4IBC30WPBF pVersion=0046&contRep=ZT&docId=E221D159907BB8F1A303005056AB0C4F&compId=irg4ibc30wpbf.pdf?ci_sign=6ad5941b92d9c85dc9f4d80e3abcf408dfea0596
IRG4IBC30WPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IRG4PSH71KDPBF pVersion=0046&contRep=ZT&docId=E221D74DA0751DF1A303005056AB0C4F&compId=irg4psh71kdpbf.pdf?ci_sign=807edbea8fc791bb19fa6f5771a90dff64a7fca4
IRG4PSH71KDPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику  од. на суму  грн.
IRG4RC10KDTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEFAA8ACB0415EA&compId=IRG4RC10KDTRPBF.pdf?ci_sign=2087d15123c50192bd1e99a508f775700674dc79
IRG4RC10KDTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
IRG4RC10UDPBF pVersion=0046&contRep=ZT&docId=E221D89F91A94DF1A303005056AB0C4F&compId=irg4rc10udpbf.pdf?ci_sign=f1c86d8696fdd0a1a5b6f29a51cde10d472021d7
IRG4RC10UDPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику  од. на суму  грн.
FZ400R17KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F4F7E06AE0D5&compId=FZ400R17KE4.pdf?ci_sign=3f57764cc2e603070a38fc08322d912fd1ad5e8f
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
XMC4502F100K768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4502F100K768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500F100F768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100F768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500F100K768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100K768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4500F144K768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F144K768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
XMC4502F100F768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4502F100F768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGNFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFV001
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Interface: QUAD SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 81 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+167.97 грн
8+118.76 грн
22+112.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR13N20DTRPBF pVersion=0046&contRep=ZT&docId=E221C0BD90492DF1A303005056AB0C4F&compId=irfr13n20dpbf.pdf?ci_sign=09aaf56c8dfd43a96b5914bb6b2e5e8b5c844bd7
IRFR13N20DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FP10R12W1T7B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-2
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R1K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1666133B1A259&compId=IPD80R1K4P7.pdf?ci_sign=6b2571a0111d4343dd05c0fe97dac72608ab0bed
IPD80R1K4P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
на замовлення 2450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.09 грн
8+50.35 грн
25+42.12 грн
27+34.84 грн
74+32.94 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SPD15P10PLGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92CF4C7E46F1CC&compId=SPD15P10PLGBTMA1-DTE.pdf?ci_sign=402130b95236a3b71feabee71e64b44e6c258ec1
SPD15P10PLGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+87.82 грн
12+79.96 грн
25+76.80 грн
33+75.21 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD70R1K4P7SAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1A3FFC51C4259&compId=IPD70R1K4P7S.pdf?ci_sign=e4d70d361d50f363141caf22b4555d1f6679c040
IPD70R1K4P7SAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2494 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+53.71 грн
11+36.26 грн
41+22.88 грн
112+21.61 грн
500+20.82 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
на замовлення 2252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.68 грн
10+41.96 грн
25+36.26 грн
37+25.26 грн
102+23.83 грн
500+22.96 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPD60R280P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA470B7CA4DE143&compId=IPD60R280P7.pdf?ci_sign=2eed03d5001be500c4f619418a3d594df8c87396
IPD60R280P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
на замовлення 2099 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+143.24 грн
10+84.71 грн
12+79.96 грн
32+76.00 грн
50+73.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD90N04S404ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA56C197F98A143&compId=IPD90N04S404.pdf?ci_sign=140394b04014dc8900b3e909a754077d67121b81
IPD90N04S404ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
Drain current: 81A
Power dissipation: 71W
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.23 грн
6+70.46 грн
10+62.55 грн
16+59.38 грн
25+53.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRL6342TRPBF pVersion=0046&contRep=ZT&docId=E222762AEBD200F1A303005056AB0C4F&compId=irl6342pbf.pdf?ci_sign=7d1868b6e75e9bb5d4c0242eeca6ff6f7a7e4218
IRL6342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.9A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 14.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3658 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.22 грн
15+27.16 грн
40+22.56 грн
61+15.36 грн
167+14.49 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IRFS4410ZTRLPBF irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF7495TRPBF pVersion=0046&contRep=ZT&docId=E221A62F61D245F1A303005056AB0C4F&compId=irf7495pbf.pdf?ci_sign=4801d8c9bb322214ec2d83b4fcdbe26c990eebc3
IRF7495TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: SO8
Power dissipation: 2.5W
Drain current: 7.3A
Drain-source voltage: 100V
Polarisation: unipolar
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
BFN27E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C80593550A0469&compId=BFN27.pdf?ci_sign=d47f01edfbcf13c2a2a443d063481245fbd11a2e
BFN27E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: PNP
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
Collector-emitter voltage: 300V
Polarisation: bipolar
Frequency: 100MHz
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
BFN27E6327HTSA1 bfn27.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c2ee1c0239
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 26000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+4.54 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IR38265MTRPBFAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE622808BB3D5&compId=IR38265M.pdf?ci_sign=1dbb08e49f01815b39ec04109f1da92968a5f623
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: I2C; PVID
Case: PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
товару немає в наявності
В кошику  од. на суму  грн.
2EDS8265HXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974
2EDS8265HXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Case: PG-DSO-16
Mounting: SMD
Output current: -8...4A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IRFP4768PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0A0F1A6F5005056AB5A8F&compId=irfp4768pbf.pdf?ci_sign=101d831607da7f80c0611a1c43b11586afbc5c9d
IRFP4768PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPD50N04S408ATMA1 Infineon-IPD50N04S4_08-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c847b245e45
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Technology: OptiMOS® -T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 7.9mΩ
Drain current: 47A
Power dissipation: 46W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
товару немає в наявності
В кошику  од. на суму  грн.
IPG20N04S408ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57AA149F9E143&compId=IPG20N04S408.pdf?ci_sign=8fef4a4a90eb99a19b047330a14f6402e403fdee
IPG20N04S408ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
товару немає в наявності
В кошику  од. на суму  грн.
IRLHS6376TRPBF pVersion=0046&contRep=ZT&docId=E2227803AA486FF1A303005056AB0C4F&compId=irlhs6376pbf.pdf?ci_sign=b652e0e89e6483e75af20b31fb083fa4743d19b3
IRLHS6376TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1.5W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 1518 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.10 грн
19+21.53 грн
50+17.50 грн
61+15.36 грн
167+14.49 грн
500+14.09 грн
1000+13.93 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IRLS3036TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF13EC71480D5EA&compId=IRLS3036TRLPBF.pdf?ci_sign=e6def82b21e5fa93fe3943d78d0e0c9d31d46c3d
IRLS3036TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику  од. на суму  грн.
IRLS4030TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1405327EAF5EA&compId=IRLS4030TRLPBF.pdf?ci_sign=e08ef8e4ed71a18d7be89ec36c726beec3021151
IRLS4030TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
IRLS3034TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1363FB77DB5EA&compId=IRLS3034TRLPBF.pdf?ci_sign=b1cd31c779cd5fbc0f101d0a52e7c4beab36a4a9
IRLS3034TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
товару немає в наявності
В кошику  од. на суму  грн.
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