Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149493) > Сторінка 2474 з 2492
Фото | Назва | Виробник | Інформація |
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IDB30E120ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3 Case: TO263-3 Mounting: SMD Features of semiconductor devices: fast switching Type of diode: rectifying Semiconductor structure: single diode Load current: 30A Max. off-state voltage: 1.2kV |
на замовлення 636 шт: термін постачання 21-30 дні (днів) |
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BAS7002VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SC79 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward impulse current: 0.1A Power dissipation: 0.25W |
на замовлення 2356 шт: термін постачання 21-30 дні (днів) |
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IPD60R210PFD7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Mounting: SMD On-state resistance: 386mΩ Drain current: 10A Pulsed drain current: 42A Power dissipation: 64W Gate-source voltage: ±20V Technology: CoolMOS™ PFD7 Drain-source voltage: 600V Case: TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BTS3080TF | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.16Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BTS3080EJ | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.16Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 218µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
BFR740L3RHE6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4V Collector current: 40mA Power dissipation: 0.16W Case: TSLP-3-9 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
ICE3BR4765JFKLA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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BSC014N04LSTATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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IPD020N03LF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IPD020N03LF2SATMA1 |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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IPP020N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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BSZ097N04LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TSDSON-8 Polarisation: unipolar On-state resistance: 9.7mΩ Gate-source voltage: ±20V Power dissipation: 35W Drain current: 40A Drain-source voltage: 40V |
на замовлення 4919 шт: термін постачання 21-30 дні (днів) |
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ICE3BS03LJGXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 35495 шт: термін постачання 21-30 дні (днів) |
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IRF9389TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6.8/-4.6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27/64mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 1105 шт: термін постачання 21-30 дні (днів) |
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IPW60R045CPFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 431W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IAUA250N04S6N006AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 169nC On-state resistance: 0.7mΩ Drain current: 57A Pulsed drain current: 1.5kA Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 250W Case: PG-HSOF-5 Kind of channel: enhancement Mounting: SMD Technology: OptiMOS™ 6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IPD80R2K0P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 24W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 9nC Version: ESD |
на замовлення 1464 шт: термін постачання 21-30 дні (днів) |
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IPP50R380CEXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Power dissipation: 73W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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IRFP3077PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 200A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 3.3mΩ Gate-source voltage: ±20V Gate charge: 160nC Technology: HEXFET® Power dissipation: 340W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
на замовлення 4971 шт: термін постачання 21-30 дні (днів) |
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BSZ018NE2LSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
S25FL128SAGBHM203 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Operating temperature: -40...125°C Type of integrated circuit: FLASH memory Mounting: SMD Kind of memory: NOR Interface: QUAD SPI Kind of package: reel; tape Kind of interface: serial Operating voltage: 2.7...3.6V Operating frequency: 133MHz Case: BGA24 Memory: 128Mb FLASH Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IPD30N10S3L34ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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IPD130N10NF2SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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ISC030N10NM6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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DSL70E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: TVS array; 27A; 245W; SOT143; Ch: 2; reel,tape; ESD Case: SOT143 Mounting: SMD Kind of package: reel; tape Version: ESD Type of diode: TVS array Application: DSL applications Leakage current: 5nA Max. forward impulse current: 27A Number of channels: 2 Max. off-state voltage: 50V Peak pulse power dissipation: 245W |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IRLL2705TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 3.8A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1746 шт: термін постачання 21-30 дні (днів) |
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IRLL2703TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223 Technology: HEXFET® Case: SOT223 Type of transistor: N-MOSFET Mounting: SMD On-state resistance: 45mΩ Power dissipation: 1W Drain current: 3.1A Pulsed drain current: 16A Gate-source voltage: ±16V Drain-source voltage: 30V Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
IPD036N04LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 40V; 90A; 94W; DPAK; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 94W Case: DPAK Gate-source voltage: 20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 59nC Kind of channel: enhancement Electrical mounting: SMT |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPC313N10N3RX1SA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 100V; 2A; SMT Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 2A Mounting: SMD Kind of channel: enhancement Technology: MOSFET Electrical mounting: SMT |
на замовлення 30605 шт: термін постачання 21-30 дні (днів) |
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TLD5097EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1 Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: LED driver; SMPS controller Integrated circuit features: linear dimming; PWM Technology: Litix™ Protection: overheating OTP Case: PG-TSDSO-14 Output current: -550...380mA Number of channels: 1 Operating voltage: 4.5...45V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TLD5098EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1 Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: LED driver; SMPS controller Integrated circuit features: linear dimming; PWM Technology: Litix™ Protection: overheating OTP Case: PG-TSDSO-14 Output current: -550...380mA Number of channels: 1 Operating voltage: 4.5...45V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TLD5098ELXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; boost,buck,buck-boost,flyback,SEPIC; PG-SSOP-14-EP Topology: boost; buck; buck-boost; flyback; SEPIC Type of integrated circuit: driver Mounting: SMD Case: PG-SSOP-14-EP Operating temperature: -40...150°C Output voltage: 4.5...5.5V Input voltage: 4.5...45V Frequency: 100...500kHz Application: automotive industry |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BSC065N06LS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 60V; 64A; 46W; PG-TDSON-8; SMT Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 60V Drain current: 64A Power dissipation: 46W Case: PG-TDSON-8 Gate-source voltage: 20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Electrical mounting: SMT |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
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BSZ065N06LS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; N; 60V; 40A; 46W; SMT Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 60V Drain current: 40A Gate-source voltage: 20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhancement Electrical mounting: SMT Power dissipation: 46W |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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TLE4269GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.1A Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 5.5...45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSZ086P03NS3EGATMA | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 69W Technology: OptiMOS™ P3 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V On-state resistance: 8.6mΩ Gate-source voltage: ±25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSZ088N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 35W Technology: OptiMOS™ 3 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 40A Drain-source voltage: 30V On-state resistance: 8.8mΩ Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
BSZ084N08NS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 63W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BSZ086P03NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 52W Technology: OptiMOS™ P3 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V On-state resistance: 8.6mΩ Gate-source voltage: ±25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSZ088N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 35W Technology: OptiMOS™ 3 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 40A Drain-source voltage: 30V On-state resistance: 8.8mΩ Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFR3410TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
IRFR3410TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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XC8362FRIABFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-28 Mounting: SMD Number of 16bit timers: 2 Number of PWM channels: 4 Memory: 500B SRAM; 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPD80R900P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD Technology: CoolMOS™ P7 Drain current: 3.9A Gate-source voltage: ±20V Power dissipation: 45W Drain-source voltage: 800V Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Gate charge: 15nC On-state resistance: 0.9Ω |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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IPU80R900P7AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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IPS80R900P7AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of channel: enhancement Version: ESD |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IPD900P06NMATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252 Type of transistor: P-MOSFET Technology: MOSFET Polarisation: P Drain-source voltage: 60V Drain current: 16.4A Power dissipation: 63W Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 90Ω Mounting: SMD Gate charge: 27nC Kind of channel: enhancement |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPS70R900P7SAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 943 шт: термін постачання 21-30 дні (днів) |
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CY7C1021DV33-10VXI | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1021DV33-10BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1021DV33-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1021DV33-10BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IPP60R099P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ICL8001GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver Type of integrated circuit: driver Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-8 Mounting: SMD Operating voltage: 10.5...26V DC Integrated circuit features: phase-cut dimming; soft-start function Number of channels: 1 Topology: flyback |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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S29PL127J60BFI040 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 60ns Case: FBGA80 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
S29PL127J65BFW040 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 65ns Case: FBGA80 Kind of interface: parallel Mounting: SMD Operating temperature: -25...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
S29PL127J70BFI040 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA80 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRLHM620TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 40A Power dissipation: 2.7W Case: PQFN3.3X3.3 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPP041N12N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3 Kind of package: tube Case: PG-TO220-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 4.1mΩ Drain current: 120A Gate-source voltage: ±20V Power dissipation: 300W Drain-source voltage: 120V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPI041N12N3GAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3 Case: PG-TO262-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 4.1mΩ Drain current: 120A Gate-source voltage: ±20V Power dissipation: 300W Drain-source voltage: 120V |
товару немає в наявності |
В кошику од. на суму грн. |
IDB30E120ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Case: TO263-3
Mounting: SMD
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. off-state voltage: 1.2kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Case: TO263-3
Mounting: SMD
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. off-state voltage: 1.2kV
на замовлення 636 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 138.12 грн |
10+ | 91.05 грн |
13+ | 76.00 грн |
34+ | 72.05 грн |
100+ | 69.67 грн |
BAS7002VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
на замовлення 2356 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
40+ | 10.13 грн |
50+ | 8.15 грн |
100+ | 7.28 грн |
188+ | 4.99 грн |
516+ | 4.67 грн |
IPD60R210PFD7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 386mΩ
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 64W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
On-state resistance: 386mΩ
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 64W
Gate-source voltage: ±20V
Technology: CoolMOS™ PFD7
Drain-source voltage: 600V
Case: TO252
товару немає в наявності
В кошику
од. на суму грн.
BTS3080TF |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товару немає в наявності
В кошику
од. на суму грн.
BTS3080EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 218µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.16Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 218µs
товару немає в наявності
В кошику
од. на суму грн.
BFR740L3RHE6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4V; 40mA; 0.16W; TSLP-3-9
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4V
Collector current: 40mA
Power dissipation: 0.16W
Case: TSLP-3-9
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
товару немає в наявності
В кошику
од. на суму грн.
ICE3BR4765JFKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 98.05 грн |
BSC014N04LSTATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 57.13 грн |
IPD020N03LF2SATMA1 |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 38.79 грн |
IPP020N03LF2SAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 58.83 грн |
BSZ097N04LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Polarisation: unipolar
On-state resistance: 9.7mΩ
Gate-source voltage: ±20V
Power dissipation: 35W
Drain current: 40A
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TSDSON-8
Polarisation: unipolar
On-state resistance: 9.7mΩ
Gate-source voltage: ±20V
Power dissipation: 35W
Drain current: 40A
Drain-source voltage: 40V
на замовлення 4919 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.34 грн |
13+ | 31.59 грн |
35+ | 27.24 грн |
94+ | 25.73 грн |
100+ | 24.78 грн |
ICE3BS03LJGXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 35495 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 47.83 грн |
IRF9389TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 1105 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
15+ | 28.03 грн |
49+ | 19.16 грн |
134+ | 18.05 грн |
250+ | 17.42 грн |
IPW60R045CPFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1533.00 грн |
2+ | 1346.71 грн |
IAUA250N04S6N006AUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 169nC
On-state resistance: 0.7mΩ
Drain current: 57A
Pulsed drain current: 1.5kA
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 250W
Case: PG-HSOF-5
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 57A; Idm: 1500A
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 169nC
On-state resistance: 0.7mΩ
Drain current: 57A
Pulsed drain current: 1.5kA
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 250W
Case: PG-HSOF-5
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 6
товару немає в наявності
В кошику
од. на суму грн.
IPD80R2K0P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9nC
Version: ESD
на замовлення 1464 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 69.91 грн |
10+ | 52.97 грн |
25+ | 38.40 грн |
67+ | 36.34 грн |
100+ | 35.71 грн |
500+ | 34.91 грн |
IPP50R380CEXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 89 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.11 грн |
10+ | 58.75 грн |
24+ | 39.59 грн |
65+ | 37.45 грн |
IRFP3077PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 340W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 340W
товару немає в наявності
В кошику
од. на суму грн.
BSZ018NE2LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
на замовлення 4971 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 79.96 грн |
10+ | 63.34 грн |
18+ | 52.25 грн |
49+ | 49.88 грн |
100+ | 47.50 грн |
BSZ018NE2LSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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S25FL128SAGBHM203 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of memory: NOR
Interface: QUAD SPI
Kind of package: reel; tape
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: BGA24
Memory: 128Mb FLASH
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of memory: NOR
Interface: QUAD SPI
Kind of package: reel; tape
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: BGA24
Memory: 128Mb FLASH
Application: automotive
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IPD30N10S3L34ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 46.13 грн |
IPD130N10NF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 31.46 грн |
ISC030N10NM6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 152.62 грн |
DSL70E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Protection diodes - arrays
Description: Diode: TVS array; 27A; 245W; SOT143; Ch: 2; reel,tape; ESD
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Type of diode: TVS array
Application: DSL applications
Leakage current: 5nA
Max. forward impulse current: 27A
Number of channels: 2
Max. off-state voltage: 50V
Peak pulse power dissipation: 245W
Category: Protection diodes - arrays
Description: Diode: TVS array; 27A; 245W; SOT143; Ch: 2; reel,tape; ESD
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Type of diode: TVS array
Application: DSL applications
Leakage current: 5nA
Max. forward impulse current: 27A
Number of channels: 2
Max. off-state voltage: 50V
Peak pulse power dissipation: 245W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 28.50 грн |
IRLL2705TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1746 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.21 грн |
10+ | 43.07 грн |
38+ | 25.02 грн |
103+ | 23.67 грн |
500+ | 22.88 грн |
1000+ | 22.80 грн |
IRLL2703TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Technology: HEXFET®
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 1W
Drain current: 3.1A
Pulsed drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Technology: HEXFET®
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 1W
Drain current: 3.1A
Pulsed drain current: 16A
Gate-source voltage: ±16V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of channel: enhancement
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IPD036N04LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 94W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 94W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 94W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 35.47 грн |
IPC313N10N3RX1SA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 2A; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 2A
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 2A; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 2A
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
на замовлення 30605 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 324.85 грн |
TLD5097EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
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TLD5098EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver; SMPS controller
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Protection: overheating OTP
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Operating voltage: 4.5...45V DC
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TLD5098ELXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; boost,buck,buck-boost,flyback,SEPIC; PG-SSOP-14-EP
Topology: boost; buck; buck-boost; flyback; SEPIC
Type of integrated circuit: driver
Mounting: SMD
Case: PG-SSOP-14-EP
Operating temperature: -40...150°C
Output voltage: 4.5...5.5V
Input voltage: 4.5...45V
Frequency: 100...500kHz
Application: automotive industry
Category: LED drivers
Description: IC: driver; boost,buck,buck-boost,flyback,SEPIC; PG-SSOP-14-EP
Topology: boost; buck; buck-boost; flyback; SEPIC
Type of integrated circuit: driver
Mounting: SMD
Case: PG-SSOP-14-EP
Operating temperature: -40...150°C
Output voltage: 4.5...5.5V
Input voltage: 4.5...45V
Frequency: 100...500kHz
Application: automotive industry
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 174.79 грн |
BSC065N06LS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 64A; 46W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 64A; 46W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 34.19 грн |
BSZ065N06LS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 46W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Power dissipation: 46W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 46W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Power dissipation: 46W
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 27.80 грн |
TLE4269GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 5.5...45V
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BSZ086P03NS3EGATMA |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
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BSZ088N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
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BSZ084N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BSZ086P03NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Technology: OptiMOS™ P3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
On-state resistance: 8.6mΩ
Gate-source voltage: ±25V
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BSZ088N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 35W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 40A
Drain-source voltage: 30V
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
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IRFR3410TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR3410TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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XC8362FRIABFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
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IPD80R900P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 800V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 800V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 114.25 грн |
10+ | 69.51 грн |
22+ | 43.47 грн |
59+ | 41.09 грн |
500+ | 39.51 грн |
IPU80R900P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 203 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 80.15 грн |
10+ | 61.44 грн |
23+ | 40.77 грн |
63+ | 38.56 грн |
IPS80R900P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 49.09 грн |
IPD900P06NMATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 16.4A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 90Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 16.4A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 90Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 23.70 грн |
IPS70R900P7SAKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 943 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 17.90 грн |
CY7C1021DV33-10VXI | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
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CY7C1021DV33-10BVXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
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CY7C1021DV33-10VXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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CY7C1021DV33-10BVXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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IPP60R099P6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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ICL8001GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Topology: flyback
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Topology: flyback
на замовлення 117 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 68.88 грн |
15+ | 62.55 грн |
41+ | 59.38 грн |
100+ | 57.80 грн |
S29PL127J60BFI040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29PL127J65BFW040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 65ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 65ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: in-tray
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S29PL127J70BFI040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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IRLHM620TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IPP041N12N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
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IPI041N12N3GAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
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од. на суму грн.