Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149417) > Сторінка 2474 з 2491
| Фото | Назва | Виробник | Інформація |
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| IRF8910TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25HS01GTDPBHI033 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S25HS01GTDPMHI013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S26HS01GTGABHA030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CY9BF118SPMC-GK7FKCGE1 | INFINEON TECHNOLOGIES |
Category: UnclassifiedDescription: CY9BF118SPMC-GK7FKCGE1 |
на замовлення 1320 шт: термін постачання 21-30 дні (днів) |
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SPD09P06PLGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -9.7A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 1747 шт: термін постачання 21-30 дні (днів) |
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IRG4IBC10UDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 3.9A Power dissipation: 25W Case: TO220AB Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4IBC30WPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 17A; 45W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 17A Power dissipation: 45W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4PSH71KDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 78A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4RC10KDTRPBF | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 9A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 9A Power dissipation: 38W Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4RC10UDPBF | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 8.5A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8.5A Power dissipation: 38W Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FZ400R17KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Collector current: 400A Case: AG-62MMES Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Power dissipation: 2.5kW Technology: TRENCHSTOP™ Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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XMC4502F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F100F768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F144K768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH Case: PG-LQFP-144 Supply voltage: 3.3V DC Number of A/D channels: 26 Number of 16bit timers: 26 Number of inputs/outputs: 91 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4502F100F768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FL128SAGNFV001 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Kind of package: tube Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Operating frequency: 133MHz Interface: QUAD SPI Kind of memory: NOR Kind of interface: serial |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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IRFR13N20DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FP10R12W1T7B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 10A Pulsed collector current: 20A Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Case: AG-EASY1B-2 Semiconductor structure: diode/transistor Technology: EasyPIM™ 1B Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPD80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement Version: ESD |
на замовлення 2450 шт: термін постачання 21-30 дні (днів) |
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SPD15P10PLGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.2Ω Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 128W Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 2164 шт: термін постачання 21-30 дні (днів) |
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IPD70R1K4P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.5A Power dissipation: 22.7W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 2494 шт: термін постачання 21-30 дні (днів) |
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IPD60R600P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Type of transistor: N-MOSFET Kind of channel: enhancement Version: ESD Polarisation: unipolar Mounting: SMD Gate charge: 9nC On-state resistance: 0.6Ω Drain current: 4A Pulsed drain current: 16A Power dissipation: 30W Gate-source voltage: ±20V Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: PG-TO252-3 |
на замовлення 2252 шт: термін постачання 21-30 дні (днів) |
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IPD60R280P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 18nC Kind of channel: enhancement Version: ESD |
на замовлення 2099 шт: термін постачання 21-30 дні (днів) |
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IPD90N04S404ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Pulsed drain current: 360A Technology: OptiMOS™ T2 Gate charge: 20nC Drain current: 81A Power dissipation: 71W |
на замовлення 2320 шт: термін постачання 21-30 дні (днів) |
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IRL6342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.9A Power dissipation: 2.5W Case: SO8 On-state resistance: 14.6mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 3658 шт: термін постачання 21-30 дні (днів) |
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| IRFS4410ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 69A Pulsed drain current: 390A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF7495TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8 Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: N-MOSFET Case: SO8 Power dissipation: 2.5W Drain current: 7.3A Drain-source voltage: 100V Polarisation: unipolar Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BFN27E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.2A; 0.36W; SOT23 Type of transistor: PNP Case: SOT23 Collector current: 0.2A Power dissipation: 0.36W Collector-emitter voltage: 300V Polarisation: bipolar Frequency: 100MHz Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BFN27E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
на замовлення 26000 шт: термін постачання 21-30 дні (днів) |
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| IR38265MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Topology: buck Kind of package: reel; tape Kind of integrated circuit: POL converter Type of integrated circuit: PMIC Interface: I2C; PVID Case: PQFN5X7 Mounting: SMD Operating temperature: -40...125°C Output current: 30A DC supply current: 50mA Output voltage: 0.5...14V DC Number of channels: 1 Supply voltage: 4.5...5.5V Input voltage: 5.3...16V DC Frequency: 0.15...1.5MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2EDS8265HXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Technology: EiceDRIVER™ Topology: MOSFET half-bridge Kind of package: reel; tape Kind of integrated circuit: high-side; MOSFET gate driver Type of integrated circuit: driver Integrated circuit features: galvanically isolated Case: PG-DSO-16 Mounting: SMD Output current: -8...4A Number of channels: 2 Supply voltage: 3...3.5V; 4.5...20V Voltage class: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFP4768PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 66A Pulsed drain current: 370A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPD50N04S408ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A Case: PG-TO252-3-313 Mounting: SMD Technology: OptiMOS® -T2 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 7.9mΩ Drain current: 47A Power dissipation: 46W Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 65W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLHS6376TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Power dissipation: 1.5W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® |
на замовлення 1518 шт: термін постачання 21-30 дні (днів) |
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IRLS3036TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLS4030TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLS3034TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 343A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB009N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level On-state resistance: 0.95mΩ Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IR2233JTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; PLCC44; 500mA; Ch: 6; MOSFET Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: PLCC44 Output current: 0.5A Number of channels: 6 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IRF8010STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 260W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IAUA200N04S5N010AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Pulsed drain current: 800A Power dissipation: 167W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 132nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLE75008ESDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| S70FL01GSAGBHBC13 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGBHIC13 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGBHMC10 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGBHVC10 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGMFB010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGMFI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGMFI013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGMFV010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGMFV011 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16; tube Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSAGMFV013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSDPBHIC10 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 66MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSDPBHVC10 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 66MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSDPMFI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 66MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S70FL01GSDPMFI011 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; SOIC16; tube Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 66MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF8910TRPBFXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| S25HS01GTDPBHI033 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| S25HS01GTDPMHI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
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| S26HS01GTGABHA030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| CY9BF118SPMC-GK7FKCGE1 |
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на замовлення 1320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 948.96 грн |
| SPD09P06PLGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1747 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.62 грн |
| 10+ | 52.57 грн |
| 24+ | 39.19 грн |
| 50+ | 38.40 грн |
| 66+ | 37.05 грн |
| 100+ | 36.18 грн |
| IRG4IBC10UDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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| IRG4IBC30WPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| IRG4PSH71KDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| IRG4RC10KDTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
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| IRG4RC10UDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
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| FZ400R17KE4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
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| XMC4502F100K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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| XMC4500F100F768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
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| XMC4500F100K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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| XMC4500F144K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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| XMC4502F100F768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
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| S25FL128SAGNFV001 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Interface: QUAD SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Interface: QUAD SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 167.97 грн |
| 8+ | 118.76 грн |
| 22+ | 112.42 грн |
| IRFR13N20DTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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| FP10R12W1T7B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-2
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-2
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
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| IPD80R1K4P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
на замовлення 2450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.09 грн |
| 8+ | 50.35 грн |
| 25+ | 42.12 грн |
| 27+ | 34.84 грн |
| 74+ | 32.94 грн |
| SPD15P10PLGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 87.82 грн |
| 12+ | 79.96 грн |
| 25+ | 76.80 грн |
| 33+ | 75.21 грн |
| IPD70R1K4P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.71 грн |
| 11+ | 36.26 грн |
| 41+ | 22.88 грн |
| 112+ | 21.61 грн |
| 500+ | 20.82 грн |
| IPD60R600P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
на замовлення 2252 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.68 грн |
| 10+ | 41.96 грн |
| 25+ | 36.26 грн |
| 37+ | 25.26 грн |
| 102+ | 23.83 грн |
| 500+ | 22.96 грн |
| IPD60R280P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
на замовлення 2099 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.24 грн |
| 10+ | 84.71 грн |
| 12+ | 79.96 грн |
| 32+ | 76.00 грн |
| 50+ | 73.63 грн |
| IPD90N04S404ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
Drain current: 81A
Power dissipation: 71W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
Drain current: 81A
Power dissipation: 71W
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.23 грн |
| 6+ | 70.46 грн |
| 10+ | 62.55 грн |
| 16+ | 59.38 грн |
| 25+ | 53.84 грн |
| IRL6342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.9A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 14.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.9A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 14.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3658 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.22 грн |
| 15+ | 27.16 грн |
| 40+ | 22.56 грн |
| 61+ | 15.36 грн |
| 167+ | 14.49 грн |
| IRFS4410ZTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
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| IRF7495TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: SO8
Power dissipation: 2.5W
Drain current: 7.3A
Drain-source voltage: 100V
Polarisation: unipolar
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: SO8
Power dissipation: 2.5W
Drain current: 7.3A
Drain-source voltage: 100V
Polarisation: unipolar
Kind of package: reel
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| BFN27E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: PNP
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
Collector-emitter voltage: 300V
Polarisation: bipolar
Frequency: 100MHz
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: PNP
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
Collector-emitter voltage: 300V
Polarisation: bipolar
Frequency: 100MHz
Mounting: SMD
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| BFN27E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 26000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.54 грн |
| IR38265MTRPBFAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: I2C; PVID
Case: PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: I2C; PVID
Case: PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
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| 2EDS8265HXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Case: PG-DSO-16
Mounting: SMD
Output current: -8...4A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Case: PG-DSO-16
Mounting: SMD
Output current: -8...4A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
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| IRFP4768PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
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| IPD50N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Technology: OptiMOS® -T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 7.9mΩ
Drain current: 47A
Power dissipation: 46W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Technology: OptiMOS® -T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 7.9mΩ
Drain current: 47A
Power dissipation: 46W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
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| IPG20N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
товару немає в наявності
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| IRLHS6376TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1.5W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1.5W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 1518 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.10 грн |
| 19+ | 21.53 грн |
| 50+ | 17.50 грн |
| 61+ | 15.36 грн |
| 167+ | 14.49 грн |
| 500+ | 14.09 грн |
| 1000+ | 13.93 грн |
| IRLS3036TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| IRLS4030TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
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| IRLS3034TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
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| IPB009N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.95mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.95mΩ
Gate-source voltage: ±20V
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| IR2233JTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 500mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: PLCC44
Output current: 0.5A
Number of channels: 6
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 500mA; Ch: 6; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: PLCC44
Output current: 0.5A
Number of channels: 6
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 602.80 грн |
| IRF8010STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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| IAUA200N04S5N010AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| TLE75008ESDXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 72.47 грн |
| S70FL01GSAGBHBC13 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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| S70FL01GSAGBHIC13 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| S70FL01GSAGBHMC10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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| S70FL01GSAGBHVC10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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| S70FL01GSAGMFA010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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| S70FL01GSAGMFB010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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| S70FL01GSAGMFI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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| S70FL01GSAGMFI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| S70FL01GSAGMFV010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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| S70FL01GSAGMFV011 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
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| S70FL01GSAGMFV013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| S70FL01GSDPBHIC10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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| S70FL01GSDPBHVC10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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| S70FL01GSDPMFI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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| S70FL01GSDPMFI011 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; SOIC16; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 66MHz; 2.7÷3.6V; SOIC16; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
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