Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149438) > Сторінка 2474 з 2491
Фото | Назва | Виробник | Інформація |
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XC8362FRIABFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-28 Mounting: SMD Number of 16bit timers: 2 Number of PWM channels: 4 Memory: 500B SRAM; 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD80R900P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD Technology: CoolMOS™ P7 Drain current: 3.9A Gate-source voltage: ±20V Power dissipation: 45W Drain-source voltage: 800V Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Gate charge: 15nC On-state resistance: 0.9Ω |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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IPU80R900P7AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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IPS80R900P7AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of channel: enhancement Version: ESD |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IPD900P06NMATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252 Type of transistor: P-MOSFET Technology: MOSFET Polarisation: P Drain-source voltage: 60V Drain current: 16.4A Power dissipation: 63W Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 90Ω Mounting: SMD Gate charge: 27nC Kind of channel: enhancement |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPS70R900P7SAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 943 шт: термін постачання 21-30 дні (днів) |
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CY7C1021DV33-10VXI | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY7C1021DV33-10BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY7C1021DV33-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY7C1021DV33-10BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPP60R099P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.9A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICL8001GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver Type of integrated circuit: driver Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-8 Mounting: SMD Operating voltage: 10.5...26V DC Integrated circuit features: phase-cut dimming; soft-start function Number of channels: 1 Topology: flyback |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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S29PL127J60BFI040 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 60ns Case: FBGA80 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29PL127J65BFW040 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 65ns Case: FBGA80 Kind of interface: parallel Mounting: SMD Operating temperature: -25...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29PL127J70BFI040 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 70ns Case: FBGA80 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRLHM620TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 40A Power dissipation: 2.7W Case: PQFN3.3X3.3 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP041N12N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3 Kind of package: tube Case: PG-TO220-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 4.1mΩ Drain current: 120A Gate-source voltage: ±20V Power dissipation: 300W Drain-source voltage: 120V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI041N12N3GAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3 Case: PG-TO262-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar On-state resistance: 4.1mΩ Drain current: 120A Gate-source voltage: ±20V Power dissipation: 300W Drain-source voltage: 120V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BGS12SN6E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz Type of integrated circuit: RF switch Output configuration: SPDT Number of channels: 2 Case: TSNP6 Supply voltage: 1.8...3.5V DC Mounting: SMD Bandwidth: 0.1...6GHz Application: telecommunication |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF8910TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 2W Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRF8910TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25HS01GTDPBHI033 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25HS01GTDPMHI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S26HS01GTGABHA030 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 200MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Application: automotive Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY9BF118SPMC-GK7FKCGE1 | INFINEON TECHNOLOGIES |
![]() Description: CY9BF118SPMC-GK7FKCGE1 |
на замовлення 1320 шт: термін постачання 21-30 дні (днів) |
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SPD09P06PLGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -9.7A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 1747 шт: термін постачання 21-30 дні (днів) |
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IRG4IBC10UDPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 3.9A Power dissipation: 25W Case: TO220AB Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4IBC30WPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 17A Power dissipation: 45W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4PSH71KDPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 78A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4RC10KDTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 9A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 9A Power dissipation: 38W Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4RC10UDPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 8.5A Power dissipation: 38W Case: DPAK Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FZ400R17KE4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Collector current: 400A Case: AG-62MMES Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Power dissipation: 2.5kW Technology: TRENCHSTOP™ Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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XMC4502F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F100F768ACXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4500F144K768ACXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH Case: PG-LQFP-144 Supply voltage: 3.3V DC Number of A/D channels: 26 Number of 16bit timers: 26 Number of inputs/outputs: 91 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC4502F100F768ACXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Case: PG-LQFP-100 Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Kind of core: 32-bit Memory: 160kB SRAM; 768kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4500 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FL128SAGNFV001 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Kind of package: tube Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Operating frequency: 133MHz Interface: QUAD SPI Kind of memory: NOR Kind of interface: serial |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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IRFR13N20DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FP10R12W1T7B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 10A Pulsed collector current: 20A Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Case: AG-EASY1B-2 Semiconductor structure: diode/transistor Technology: EasyPIM™ 1B Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPD80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Power dissipation: 32W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement Version: ESD |
на замовлення 2450 шт: термін постачання 21-30 дні (днів) |
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SPD15P10PLGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Technology: SIPMOS™ Mounting: SMD Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.2Ω Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 128W Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 2164 шт: термін постачання 21-30 дні (днів) |
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IPD70R1K4P7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.5A Power dissipation: 22.7W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 2494 шт: термін постачання 21-30 дні (днів) |
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IPD60R600P7SAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Type of transistor: N-MOSFET Kind of channel: enhancement Version: ESD Polarisation: unipolar Mounting: SMD Gate charge: 9nC On-state resistance: 0.6Ω Drain current: 4A Pulsed drain current: 16A Power dissipation: 30W Gate-source voltage: ±20V Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: PG-TO252-3 |
на замовлення 2252 шт: термін постачання 21-30 дні (днів) |
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IPD60R280P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 18nC Kind of channel: enhancement Version: ESD |
на замовлення 2099 шт: термін постачання 21-30 дні (днів) |
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IPD90N04S404ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Pulsed drain current: 360A Technology: OptiMOS™ T2 Gate charge: 20nC Drain current: 81A Power dissipation: 71W |
на замовлення 2320 шт: термін постачання 21-30 дні (днів) |
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IRL6342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.9A Power dissipation: 2.5W Case: SO8 On-state resistance: 14.6mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 3658 шт: термін постачання 21-30 дні (днів) |
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IRFS4410ZTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 69A Pulsed drain current: 390A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF7495TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8 Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: N-MOSFET Case: SO8 Power dissipation: 2.5W Drain current: 7.3A Drain-source voltage: 100V Polarisation: unipolar Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BFN27E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 300V; 0.2A; 0.36W; SOT23 Type of transistor: PNP Case: SOT23 Collector current: 0.2A Power dissipation: 0.36W Collector-emitter voltage: 300V Polarisation: bipolar Frequency: 100MHz Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BFN27E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 26000 шт: термін постачання 21-30 дні (днів) |
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IR38265MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Topology: buck Kind of package: reel; tape Kind of integrated circuit: POL converter Type of integrated circuit: PMIC Interface: I2C; PVID Case: PQFN5X7 Mounting: SMD Operating temperature: -40...125°C Output current: 30A DC supply current: 50mA Output voltage: 0.5...14V DC Number of channels: 1 Supply voltage: 4.5...5.5V Input voltage: 5.3...16V DC Frequency: 0.15...1.5MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2EDS8265HXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Technology: EiceDRIVER™ Topology: MOSFET half-bridge Kind of package: reel; tape Kind of integrated circuit: high-side; MOSFET gate driver Type of integrated circuit: driver Integrated circuit features: galvanically isolated Case: PG-DSO-16 Mounting: SMD Output current: -8...4A Number of channels: 2 Supply voltage: 3...3.5V; 4.5...20V Voltage class: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFP4768PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 66A Pulsed drain current: 370A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPD50N04S408ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A Case: PG-TO252-3-313 Mounting: SMD Technology: OptiMOS® -T2 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 7.9mΩ Drain current: 47A Power dissipation: 46W Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 65W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLHS6376TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Power dissipation: 1.5W Case: PQFN2X2 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® |
на замовлення 1518 шт: термін постачання 21-30 дні (днів) |
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IRLS3036TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLS4030TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLS3034TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 343A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. |
XC8362FRIABFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 500B SRAM; 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
товару немає в наявності
В кошику
од. на суму грн.
IPD80R900P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 800V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 800V
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 114.25 грн |
10+ | 69.51 грн |
22+ | 43.47 грн |
59+ | 41.09 грн |
500+ | 39.51 грн |
IPU80R900P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 203 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 80.15 грн |
10+ | 61.44 грн |
23+ | 40.77 грн |
63+ | 38.56 грн |
IPS80R900P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 49.09 грн |
IPD900P06NMATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 16.4A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 90Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 16.4A; 63W; DPAK,TO252
Type of transistor: P-MOSFET
Technology: MOSFET
Polarisation: P
Drain-source voltage: 60V
Drain current: 16.4A
Power dissipation: 63W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 90Ω
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 23.70 грн |
IPS70R900P7SAKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 943 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 17.90 грн |
CY7C1021DV33-10VXI | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
CY7C1021DV33-10BVXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
CY7C1021DV33-10VXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
CY7C1021DV33-10BVXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товару немає в наявності
В кошику
од. на суму грн.
IPP60R099P6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
ICL8001GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Topology: flyback
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
Number of channels: 1
Topology: flyback
на замовлення 117 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 68.88 грн |
15+ | 62.55 грн |
41+ | 59.38 грн |
100+ | 57.80 грн |
S29PL127J60BFI040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
S29PL127J65BFW040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 65ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 65ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
S29PL127J70BFI040 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
IRLHM620TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IPP041N12N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Kind of package: tube
Case: PG-TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
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IPI041N12N3GAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO262-3
Case: PG-TO262-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 4.1mΩ
Drain current: 120A
Gate-source voltage: ±20V
Power dissipation: 300W
Drain-source voltage: 120V
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BGS12SN6E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
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IRF8910TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
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IRF8910TRPBFXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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S25HS01GTDPBHI033 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25HS01GTDPMHI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S26HS01GTGABHA030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Application: automotive
Kind of package: in-tray
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CY9BF118SPMC-GK7FKCGE1 |
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на замовлення 1320 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
60+ | 948.96 грн |
SPD09P06PLGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 1747 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.62 грн |
10+ | 52.57 грн |
24+ | 39.19 грн |
50+ | 38.40 грн |
66+ | 37.05 грн |
100+ | 36.18 грн |
IRG4IBC10UDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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IRG4IBC30WPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
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IRG4PSH71KDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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IRG4RC10KDTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
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IRG4RC10UDPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
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FZ400R17KE4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
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XMC4502F100K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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XMC4500F100F768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
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XMC4500F100K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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XMC4500F144K768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Case: PG-LQFP-144
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
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XMC4502F100F768ACXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Case: PG-LQFP-100
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of core: 32-bit
Memory: 160kB SRAM; 768kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
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S25FL128SAGNFV001 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Interface: QUAD SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Interface: QUAD SPI
Kind of memory: NOR
Kind of interface: serial
на замовлення 81 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 167.97 грн |
8+ | 118.76 грн |
22+ | 112.42 грн |
IRFR13N20DTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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FP10R12W1T7B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-2
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Case: AG-EASY1B-2
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
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IPD80R1K4P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
на замовлення 2450 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.09 грн |
8+ | 50.35 грн |
25+ | 42.12 грн |
27+ | 34.84 грн |
74+ | 32.94 грн |
SPD15P10PLGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Technology: SIPMOS™
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.2Ω
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 128W
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.82 грн |
12+ | 79.96 грн |
25+ | 76.80 грн |
33+ | 75.21 грн |
IPD70R1K4P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.5A
Power dissipation: 22.7W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2494 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 53.71 грн |
11+ | 36.26 грн |
41+ | 22.88 грн |
112+ | 21.61 грн |
500+ | 20.82 грн |
IPD60R600P7SAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Mounting: SMD
Gate charge: 9nC
On-state resistance: 0.6Ω
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 30W
Gate-source voltage: ±20V
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO252-3
на замовлення 2252 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 59.68 грн |
10+ | 41.96 грн |
25+ | 36.26 грн |
37+ | 25.26 грн |
102+ | 23.83 грн |
500+ | 22.96 грн |
IPD60R280P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Version: ESD
на замовлення 2099 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 143.24 грн |
10+ | 84.71 грн |
12+ | 79.96 грн |
32+ | 76.00 грн |
50+ | 73.63 грн |
IPD90N04S404ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
Drain current: 81A
Power dissipation: 71W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
Drain current: 81A
Power dissipation: 71W
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 91.23 грн |
6+ | 70.46 грн |
10+ | 62.55 грн |
16+ | 59.38 грн |
25+ | 53.84 грн |
IRL6342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.9A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 14.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.9A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 14.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3658 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.22 грн |
15+ | 27.16 грн |
40+ | 22.56 грн |
61+ | 15.36 грн |
167+ | 14.49 грн |
IRFS4410ZTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
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IRF7495TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: SO8
Power dissipation: 2.5W
Drain current: 7.3A
Drain-source voltage: 100V
Polarisation: unipolar
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: SO8
Power dissipation: 2.5W
Drain current: 7.3A
Drain-source voltage: 100V
Polarisation: unipolar
Kind of package: reel
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BFN27E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: PNP
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
Collector-emitter voltage: 300V
Polarisation: bipolar
Frequency: 100MHz
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: PNP
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.36W
Collector-emitter voltage: 300V
Polarisation: bipolar
Frequency: 100MHz
Mounting: SMD
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BFN27E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 26000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.54 грн |
IR38265MTRPBFAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: I2C; PVID
Case: PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Type of integrated circuit: PMIC
Interface: I2C; PVID
Case: PQFN5X7
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
DC supply current: 50mA
Output voltage: 0.5...14V DC
Number of channels: 1
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
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2EDS8265HXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Case: PG-DSO-16
Mounting: SMD
Output current: -8...4A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Type of integrated circuit: driver
Integrated circuit features: galvanically isolated
Case: PG-DSO-16
Mounting: SMD
Output current: -8...4A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
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IRFP4768PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
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IPD50N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Technology: OptiMOS® -T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 7.9mΩ
Drain current: 47A
Power dissipation: 46W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Technology: OptiMOS® -T2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 7.9mΩ
Drain current: 47A
Power dissipation: 46W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
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IPG20N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
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IRLHS6376TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1.5W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Power dissipation: 1.5W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
на замовлення 1518 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.10 грн |
19+ | 21.53 грн |
50+ | 17.50 грн |
61+ | 15.36 грн |
167+ | 14.49 грн |
500+ | 14.09 грн |
1000+ | 13.93 грн |
IRLS3036TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLS4030TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
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IRLS3034TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
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