Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149380) > Сторінка 2468 з 2490
Фото | Назва | Виробник | Інформація |
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BCR183E6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SC59; R1: 10kΩ; R2: 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59 Current gain: 30 Mounting: SMD Frequency: 200MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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T560N16TOFXPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 809A Load current: 559A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 8kA Features of semiconductor devices: phase controlled thyristor (PCT) |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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BFN26E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.2A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 70MHz |
на замовлення 5999 шт: термін постачання 21-30 дні (днів) |
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XMC DIGITAL POWER EXPLORER KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1 Type of development kit: ARM Infineon Family: XMC1300; XMC4200 Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller Components: BSC0924ND; IRS2011S; XMC1300; XMC4200 Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2 Kind of connector: pin strips; USB B micro Number of add-on connectors: 1 Kind of architecture: Cortex M4; Cortex M0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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XMC1302Q024X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300 Case: PG-VQFN-24 Memory: 16kB SRAM; 64kB FLASH Kind of core: 32-bit Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Kind of architecture: Cortex M0 Family: XMC1300 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 8 Number of A/D channels: 8 Number of inputs/outputs: 22 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
XMC1302Q040X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300 Case: PG-VQFN-40 Memory: 16kB SRAM; 64kB FLASH Kind of core: 32-bit Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Kind of architecture: Cortex M0 Family: XMC1300 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 8 Number of A/D channels: 12 Number of inputs/outputs: 34 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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XMC1302T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Kind of architecture: Cortex M0 Family: XMC1300 Supply voltage: 1.8...5.5V DC Number of 16bit timers: 8 Number of A/D channels: 12 Number of inputs/outputs: 34 Memory: 16kB SRAM; 64kB FLASH Case: PG-TSSOP-38 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC1404Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Case: PG-VQFN-48 Memory: 16kB SRAM; 64kB FLASH Kind of core: 32-bit Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; USIC x4 Kind of architecture: Cortex M0 Family: XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 16 Number of A/D channels: 12 Number of inputs/outputs: 42 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
XMC1201Q040F0200ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH Case: PG-VQFN-40 Memory: 16kB SRAM; 200kB FLASH Kind of core: 32-bit Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO Kind of architecture: Cortex M0 Family: XMC1200 Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 12 Number of inputs/outputs: 34 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
XMC1202Q040X0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200 Case: PG-VQFN-40 Memory: 16kB SRAM; 32kB FLASH Kind of core: 32-bit Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Kind of architecture: Cortex M0 Family: XMC1200 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 12 Number of inputs/outputs: 26 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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XMC1202T016X0032ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH Case: PG-TSSOP-16 Memory: 16kB SRAM; 32kB FLASH Kind of core: 32-bit Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Kind of architecture: Cortex M0 Family: XMC1200 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Number of 16bit timers: 4 Number of A/D channels: 6 Number of inputs/outputs: 14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
S70FL01GSAGBHBC10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRF8707TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.1A Pulsed drain current: 88A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF1324PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB Mounting: THT Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Case: TO220AB Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 160nC On-state resistance: 1.5mΩ Drain-source voltage: 24V Drain current: 353A Power dissipation: 300W Kind of package: tube |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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AUIRF1324STRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 340A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AUIRF1324WL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 382A Power dissipation: 300W Case: TO262WL Gate-source voltage: ±20V On-state resistance: 1.16mΩ Mounting: THT Gate charge: 0.12µC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2ED2181S06FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-8 Output current: -2.5...2.5A Number of channels: 2 Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Supply voltage: 10...20V Voltage class: 650V Protection: undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
2ED21844S06JXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2 Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: PG-DSO-14 Output current: -2.5...2.5A Number of channels: 2 Mounting: SMD Kind of package: reel; tape Supply voltage: 10...20V Voltage class: 650V Protection: undervoltage UVP Integrated circuit features: integrated bootstrap functionality |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IRFB3307PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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BCR402WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Case: SOT343 Mounting: SMD Output current: 20...60mA Number of channels: 1 Operating voltage: 1.2...18V DC Integrated circuit features: linear dimming Kind of integrated circuit: current regulator; LED driver Type of integrated circuit: driver Topology: single transistor |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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IPD12CN10NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 67A Power dissipation: 125W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 1832 шт: термін постачання 21-30 дні (днів) |
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XMC4400F64F256ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC Case: PG-LQFP-64 Supply voltage: 3.3V DC Number of A/D channels: 9 Number of 16bit timers: 26 Number of inputs/outputs: 31 Kind of core: 32-bit Memory: 80kB SRAM; 256kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4400 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4400F64K512ABXQSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC Case: PG-LQFP-64 Supply voltage: 3.3V DC Number of A/D channels: 9 Number of 16bit timers: 26 Number of inputs/outputs: 31 Kind of core: 32-bit Memory: 80kB SRAM; 512kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4400 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XMC4402F64F256ABXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC Case: PG-LQFP-64 Supply voltage: 3.3V DC Number of A/D channels: 9 Number of 16bit timers: 26 Number of inputs/outputs: 31 Kind of core: 32-bit Memory: 80kB SRAM; 256kB FLASH Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Family: XMC4400 Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BTS6142D | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Output current: 7A Case: TO252-5 Mounting: SMD Number of channels: 1 Kind of integrated circuit: high-side Technology: High Current PROFET Supply voltage: 5.5...38V DC Kind of output: N-Channel On-state resistance: 10mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF7458TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BTS3118N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Technology: HITFET® Case: SOT223-3 Kind of integrated circuit: low-side Kind of output: N-Channel Mounting: SMD On-state resistance: 70mΩ Number of channels: 1 Output current: 2.17A Output voltage: 42V Type of integrated circuit: power switch |
на замовлення 1908 шт: термін постачання 21-30 дні (днів) |
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IMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247 Gate-source voltage: -10...20V On-state resistance: 59mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AIMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Type of transistor: N-MOSFET Technology: CoolSiC™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 130A Power dissipation: 114W Case: TO247 Gate-source voltage: -7...20V On-state resistance: 75mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IGCM20F60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: DIP 36x21 (PG-DIP-24) Output current: -20...20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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TLE42754DATMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.25V Output voltage: 5V Output current: 0.45A Case: PG-TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 5.5...42V |
на замовлення 2459 шт: термін постачання 21-30 дні (днів) |
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CY7C199D-10VXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 10ns Case: SOJ28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
IPB330P10NMATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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IPP041N04NGXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3 Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Case: PG-TO220-3 Kind of package: tube Polarisation: unipolar On-state resistance: 4.1mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 80A Power dissipation: 94W |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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IRFB7546PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Power dissipation: 99W Case: TO220AB On-state resistance: 7.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 58nC |
на замовлення 1289 шт: термін постачання 21-30 дні (днів) |
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BAR6702VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
на замовлення 72000 шт: термін постачання 21-30 дні (днів) |
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BSC066N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 46W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SPD18P06PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.6A Power dissipation: 80W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhancement |
на замовлення 2424 шт: термін постачання 21-30 дні (днів) |
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SPD08P06PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.8A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
CY7C1470BV25-167BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 167MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470BV25-200BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470BV33-200BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470BV25-200AXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470BV25-250AXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470BV25-250AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470BV33-167AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470BV33-167BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470V25-200AXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470V25-200BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470V25-200BZXC | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 2.5V DC Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470V33-167AXC | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470V33-167AXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
CY7C1470V33-167BZI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 3.135...3.6V DC Frequency: 167MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BCX5310H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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BCX5316H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Current gain: 25 Mounting: SMD Frequency: 125MHz Application: automotive industry |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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CY8C5467LTI-LP003 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; 67MHz; QFN,QFN68; Features: DMA,PoR Type of integrated circuit: ARM microcontroller Case: QFN68; QFN Mounting: SMD Number of inputs/outputs: 38 Kind of architecture: Cortex M3 Operating temperature: -40...85°C Number of 16bit timers: 4 Clock frequency: 67MHz Integrated circuit features: DMA; PoR Number of PWM channels: 1 Number of output compare channels: 2 Number of input capture channels: 2 |
на замовлення 875 шт: термін постачання 21-30 дні (днів) |
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ISA220280C03LMDSXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: ISA220280C03LMDSXTMA1 |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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BB639E7904HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 2.4...40pF |
на замовлення 2873 шт: термін постачання 21-30 дні (днів) |
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BB535E7904HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF Leakage current: 0.2µA Load current: 20mA Capacitance: 2...20pF Type of diode: varicap Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Max. off-state voltage: 30V Case: SOD323 |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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BSS670S2LH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23 Technology: OptiMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain current: 0.54A Drain-source voltage: 55V On-state resistance: 0.65Ω Power dissipation: 0.36W Gate-source voltage: ±20V Case: SOT23 |
на замовлення 2338 шт: термін постачання 21-30 дні (днів) |
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BCR183E6433HTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SC59; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 30
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SC59; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 30
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.82 грн |
T560N16TOFXPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
на замовлення 11 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 9266.23 грн |
BFN26E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
на замовлення 5999 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
53+ | 7.60 грн |
100+ | 6.89 грн |
205+ | 4.51 грн |
563+ | 4.28 грн |
3000+ | 4.12 грн |
XMC DIGITAL POWER EXPLORER KIT |
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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XMC1302Q024X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 8
Number of inputs/outputs: 22
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 8
Number of inputs/outputs: 22
товару немає в наявності
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од. на суму грн.
XMC1302Q040X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 12
Number of inputs/outputs: 34
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 12
Number of inputs/outputs: 34
товару немає в наявності
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од. на суму грн.
XMC1302T038X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 12
Number of inputs/outputs: 34
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1300
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 8
Number of A/D channels: 12
Number of inputs/outputs: 34
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
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XMC1404Q048X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 16
Number of A/D channels: 12
Number of inputs/outputs: 42
товару немає в наявності
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од. на суму грн.
XMC1201Q040F0200ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Case: PG-VQFN-40
Memory: 16kB SRAM; 200kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,200kBFLASH
Case: PG-VQFN-40
Memory: 16kB SRAM; 200kB FLASH
Kind of core: 32-bit
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 34
товару немає в наявності
В кошику
од. на суму грн.
XMC1202Q040X0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 26
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 12
Number of inputs/outputs: 26
товару немає в наявності
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од. на суму грн.
XMC1202T016X0032ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 6
Number of inputs/outputs: 14
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,32kBFLASH
Case: PG-TSSOP-16
Memory: 16kB SRAM; 32kB FLASH
Kind of core: 32-bit
Integrated circuit features: ACMP x2; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Kind of architecture: Cortex M0
Family: XMC1200
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Number of 16bit timers: 4
Number of A/D channels: 6
Number of inputs/outputs: 14
товару немає в наявності
В кошику
од. на суму грн.
S70FL01GSAGBHBC10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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IRF8707TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.1A
Pulsed drain current: 88A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF1324PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 1.5mΩ
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: TO220AB
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 1.5mΩ
Drain-source voltage: 24V
Drain current: 353A
Power dissipation: 300W
Kind of package: tube
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 165.41 грн |
9+ | 105.30 грн |
25+ | 99.76 грн |
100+ | 98.17 грн |
AUIRF1324STRL |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRF1324WL |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhancement
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2ED2181S06FXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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2ED21844S06JXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
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IRFB3307PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 164.55 грн |
4+ | 129.05 грн |
10+ | 106.88 грн |
12+ | 78.38 грн |
33+ | 73.63 грн |
BCR402WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Topology: single transistor
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 46.04 грн |
40+ | 10.13 грн |
100+ | 8.95 грн |
120+ | 7.76 грн |
330+ | 7.36 грн |
3000+ | 7.20 грн |
IPD12CN10NGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1832 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.97 грн |
10+ | 94.21 грн |
14+ | 71.25 грн |
37+ | 67.30 грн |
100+ | 65.71 грн |
XMC4400F64F256ABXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
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XMC4400F64K512ABXQSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...125°C
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XMC4402F64F256ABXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,256kBFLASH; 3.3VDC
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of 16bit timers: 26
Number of inputs/outputs: 31
Kind of core: 32-bit
Memory: 80kB SRAM; 256kB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Operating temperature: -40...85°C
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BTS6142D |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 7A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Supply voltage: 5.5...38V DC
Kind of output: N-Channel
On-state resistance: 10mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 7A
Case: TO252-5
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: high-side
Technology: High Current PROFET
Supply voltage: 5.5...38V DC
Kind of output: N-Channel
On-state resistance: 10mΩ
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IRF7458TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS3118N |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Technology: HITFET®
Case: SOT223-3
Kind of integrated circuit: low-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 70mΩ
Number of channels: 1
Output current: 2.17A
Output voltage: 42V
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Technology: HITFET®
Case: SOT223-3
Kind of integrated circuit: low-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 70mΩ
Number of channels: 1
Output current: 2.17A
Output voltage: 42V
Type of integrated circuit: power switch
на замовлення 1908 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 123.63 грн |
10+ | 83.92 грн |
13+ | 73.63 грн |
35+ | 69.67 грн |
100+ | 68.09 грн |
250+ | 66.50 грн |
IMW120R045M1XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -10...20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -10...20V
On-state resistance: 59mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AIMW120R045M1XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IGCM20F60GAXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 842.38 грн |
2+ | 691.17 грн |
4+ | 653.96 грн |
5+ | 653.16 грн |
TLE42754DATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...42V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 5.5...42V
на замовлення 2459 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 112.55 грн |
10+ | 76.00 грн |
13+ | 73.63 грн |
25+ | 69.67 грн |
50+ | 67.30 грн |
CY7C199D-10VXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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IPB330P10NMATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 166.26 грн |
IPP041N04NGXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
на замовлення 195 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 107.43 грн |
10+ | 56.85 грн |
25+ | 50.67 грн |
26+ | 36.18 грн |
50+ | 36.10 грн |
72+ | 34.12 грн |
IRFB7546PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 7.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 58nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 99W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 99W
Case: TO220AB
On-state resistance: 7.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 58nC
на замовлення 1289 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 91.23 грн |
7+ | 57.00 грн |
10+ | 48.29 грн |
20+ | 46.71 грн |
55+ | 44.34 грн |
BAR6702VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 72000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.67 грн |
BSC066N06NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
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SPD18P06PGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
на замовлення 2424 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 83.56 грн |
10+ | 71.25 грн |
18+ | 54.63 грн |
47+ | 51.46 грн |
SPD08P06PGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
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CY7C1470BV25-167BZXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 167MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470BV25-200BZXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470BV33-200BZXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470BV25-200AXC |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470BV25-250AXC |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470BV25-250AXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470BV33-167AXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470BV33-167BZI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470V25-200AXC |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470V25-200BZI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470V25-200BZXC |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470V33-167AXC |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470V33-167AXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
товару немає в наявності
В кошику
од. на суму грн.
CY7C1470V33-167BZI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
товару немає в наявності
В кошику
од. на суму грн.
BCX5310H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 10.23 грн |
BCX5316H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 10.23 грн |
CY8C5467LTI-LP003 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; QFN,QFN68; Features: DMA,PoR
Type of integrated circuit: ARM microcontroller
Case: QFN68; QFN
Mounting: SMD
Number of inputs/outputs: 38
Kind of architecture: Cortex M3
Operating temperature: -40...85°C
Number of 16bit timers: 4
Clock frequency: 67MHz
Integrated circuit features: DMA; PoR
Number of PWM channels: 1
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 67MHz; QFN,QFN68; Features: DMA,PoR
Type of integrated circuit: ARM microcontroller
Case: QFN68; QFN
Mounting: SMD
Number of inputs/outputs: 38
Kind of architecture: Cortex M3
Operating temperature: -40...85°C
Number of 16bit timers: 4
Clock frequency: 67MHz
Integrated circuit features: DMA; PoR
Number of PWM channels: 1
Number of output compare channels: 2
Number of input capture channels: 2
на замовлення 875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
260+ | 870.52 грн |
ISA220280C03LMDSXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA220280C03LMDSXTMA1
Category: Multi channel transistors
Description: ISA220280C03LMDSXTMA1
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 16.37 грн |
BB639E7904HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
на замовлення 2873 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
39+ | 10.37 грн |
75+ | 7.38 грн |
100+ | 7.04 грн |
222+ | 4.23 грн |
608+ | 4.00 грн |
BB535E7904HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2...20pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Leakage current: 0.2µA
Load current: 20mA
Capacitance: 2...20pF
Type of diode: varicap
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Case: SOD323
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
30+ | 13.46 грн |
39+ | 10.37 грн |
BSS670S2LH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.54A
Drain-source voltage: 55V
On-state resistance: 0.65Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Technology: OptiMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.54A
Drain-source voltage: 55V
On-state resistance: 0.65Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Case: SOT23
на замовлення 2338 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
40+ | 9.90 грн |
58+ | 6.86 грн |
100+ | 5.89 грн |
247+ | 3.76 грн |
679+ | 3.55 грн |