Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148398) > Сторінка 2468 з 2474
Фото | Назва | Виробник | Інформація |
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XMC1404Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 42 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-48 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1402F064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-LQFP-64 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1402Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 42 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-48 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1402Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-64 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
XMC1402Q040X0064AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x4 Number of inputs/outputs: 35 Number of 16bit timers: 16 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-40 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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XMC1100T016X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 14 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 6 Kind of architecture: Cortex M0 Family: XMC1100 Memory: 16kB SRAM; 64kB FLASH Case: PG-TSSOP-16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1100T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 Memory: 16kB SRAM; 64kB FLASH Case: PG-TSSOP-38 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
XMC1302Q040X0064ABXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300 Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 Number of inputs/outputs: 34 Number of 16bit timers: 8 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-40 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY8C5287AXI-LP095 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller Type of integrated circuit: ARM microcontroller |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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PVT412LPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 565 шт: термін постачання 21-30 дні (днів) |
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PVT412APBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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PVT412ASPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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PVT412PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 1958 шт: термін постачання 21-30 дні (днів) |
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PVT412LS-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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PVT412S-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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IPA80R750P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD Mounting: THT Case: TO220FP Drain-source voltage: 800V Drain current: 3.9A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Power dissipation: 26W Polarisation: unipolar Kind of package: tube Version: ESD Gate charge: 15nC Technology: CoolMOS™ P7 Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 487 шт: термін постачання 21-30 дні (днів) |
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BSS138IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 93000 шт: термін постачання 21-30 дні (днів) |
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IPD30N06S2L23ATMA3 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 407500 шт: термін постачання 21-30 дні (днів) |
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IPD30N06S4L23ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IDH20G65C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W Type of diode: Schottky rectifying Technology: CoolSiC™ 6G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward impulse current: 79A Leakage current: 153µA Kind of package: tube Power dissipation: 108W Heatsink thickness: 1.17...1.37mm Max. forward voltage: 1.25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDH20G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward impulse current: 119A Leakage current: 4.1µA Kind of package: tube Power dissipation: 157W Heatsink thickness: 1.17...137mm Max. forward voltage: 1.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDH20G120C5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward impulse current: 0.168kA Leakage current: 8.5µA Kind of package: tube Power dissipation: 330W Max. forward voltage: 1.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRL40SC228 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 557A Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRL40S212ARMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 254A Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRL40T209ATMA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 586A Case: PG-HSOF-8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IR21531STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BAS2103WE6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching Type of diode: switching |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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IRLR3636TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IPD50N03S4L06ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IPP050N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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PVT312PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 488 шт: термін постачання 21-30 дні (днів) |
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BTS118D | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-3 On-state resistance: 0.1Ω Technology: HITFET® Output voltage: 42V Power dissipation: 21W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PVT212S-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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IRF7328TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRF9321TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IRF9388TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IKCM15F60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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BSS84PH7894XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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IRFP4868PBFAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 70A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FP50R12KT3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: AG-ECONO3-3 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: EconoPIM™ 2 Mechanical mounting: screw Power dissipation: 280W Application: Inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
F475R12KS4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x2; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-ECONO2-6 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: EconoPACK™ 2 Mechanical mounting: screw Power dissipation: 500W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FS75R17KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 75A Case: AG-ECONO3-4 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Mechanical mounting: screw Power dissipation: 465W Application: Inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FZ2000R33HE4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 3.3kV Collector current: 2kA Case: AG-IHVB190-3 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 4kA Technology: TRENCHSTOP™ Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FS150R12KT4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Power dissipation: 750W Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 3 Case: AG-ECONO3-4 Topology: IGBT three-phase bridge; NTC thermistor Pulsed collector current: 300A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FF500R17KE4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 500A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FF300R17ME4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.8kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Case: AG-ECONOD-3 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 150A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Case: AG-ECONO4-1 Topology: IGBT three-phase bridge; NTC thermistor Pulsed collector current: 300A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FF900R12ME7B11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 900A Case: AG-ECONOD-5 Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: TRENCHSTOP™ Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FS200R12KT4RB11BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 200A Case: AG-ECONO3-4 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: EconoPACK™ 3 Mechanical mounting: screw Power dissipation: 1kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FP75R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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FS150R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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FS100R12KE3BOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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F3L300R07PE4PBOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT Type of module: IGBT |
на замовлення 202 шт: термін постачання 21-30 дні (днів) |
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IRS2004STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BCW67CE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz |
на замовлення 1380 шт: термін постачання 21-30 дні (днів) |
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BCW68FE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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BCW68GE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
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BC817K40E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 90000 шт: термін постачання 21-30 дні (днів) |
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BC817K40WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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BCP5316H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 7000 шт: термін постачання 21-30 дні (днів) |
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XMC1404Q048X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
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В кошику
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XMC1402F064X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-LQFP-64
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В кошику
од. на суму грн.
XMC1402Q048X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
товару немає в наявності
В кошику
од. на суму грн.
XMC1402Q064X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
товару немає в наявності
В кошику
од. на суму грн.
XMC1402Q040X0064AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 35
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x4
Number of inputs/outputs: 35
Number of 16bit timers: 16
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
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XMC1100T016X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-16; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 14
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 6
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-16
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XMC1100T038X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
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В кошику
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XMC1302Q040X0064ABXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Number of inputs/outputs: 34
Number of 16bit timers: 8
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-40
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CY8C5287AXI-LP095 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Type of integrated circuit: ARM microcontroller
на замовлення 105 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
90+ | 923.74 грн |
PVT412LPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 565 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 310.38 грн |
100+ | 259.16 грн |
PVT412APBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 167 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 503.03 грн |
PVT412ASPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 104 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 503.03 грн |
PVT412PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 1958 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 310.38 грн |
100+ | 259.16 грн |
PVT412LS-TPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
750+ | 278.27 грн |
PVT412S-TPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
750+ | 279.10 грн |
IPA80R750P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Gate charge: 15nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Mounting: THT
Case: TO220FP
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 26W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Gate charge: 15nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 487 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 120.20 грн |
10+ | 87.92 грн |
16+ | 58.87 грн |
42+ | 55.81 грн |
BSS138IXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 93000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.63 грн |
IPD30N06S2L23ATMA3 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 407500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 37.13 грн |
IPD30N06S4L23ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 29.47 грн |
IDH20G65C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 79A
Leakage current: 153µA
Kind of package: tube
Power dissipation: 108W
Heatsink thickness: 1.17...1.37mm
Max. forward voltage: 1.25V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 79A
Leakage current: 153µA
Kind of package: tube
Power dissipation: 108W
Heatsink thickness: 1.17...1.37mm
Max. forward voltage: 1.25V
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IDH20G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 119A
Leakage current: 4.1µA
Kind of package: tube
Power dissipation: 157W
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 119A
Leakage current: 4.1µA
Kind of package: tube
Power dissipation: 157W
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
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IDH20G120C5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Kind of package: tube
Power dissipation: 330W
Max. forward voltage: 1.5V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Kind of package: tube
Power dissipation: 330W
Max. forward voltage: 1.5V
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IRL40SC228 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRL40S212ARMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 254A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 254A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 254A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRL40T209ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 586A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 586A; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 586A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IR21531STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 67.51 грн |
BAS2103WE6433HTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.84 грн |
IRLR3636TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IPD50N03S4L06ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 24.78 грн |
IPP050N03LF2SAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 33.51 грн |
PVT312PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 488 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 340.02 грн |
100+ | 284.39 грн |
BTS118D |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
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PVT212S-TPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
750+ | 504.68 грн |
IRF7328TRPBFXTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF9321TRPBFXTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 15A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 15A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 15A
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IRF9388TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 12A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 12A
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од. на суму грн.
IKCM15F60GAXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 754.14 грн |
42+ | 629.94 грн |
BSS84PH7894XTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.24 грн |
IRFP4868PBFAKMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
FP50R12KT3BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO3-3
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: EconoPIM™ 2
Mechanical mounting: screw
Power dissipation: 280W
Application: Inverter
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO3-3
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: EconoPIM™ 2
Mechanical mounting: screw
Power dissipation: 280W
Application: Inverter
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F475R12KS4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x2; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO2-6
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: EconoPACK™ 2
Mechanical mounting: screw
Power dissipation: 500W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x2; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-ECONO2-6
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: EconoPACK™ 2
Mechanical mounting: screw
Power dissipation: 500W
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FS75R17KE3BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Power dissipation: 465W
Application: Inverter
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Power dissipation: 465W
Application: Inverter
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FZ2000R33HE4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 3.3kV
Collector current: 2kA
Case: AG-IHVB190-3
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4kA
Technology: TRENCHSTOP™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 3.3kV
Collector current: 2kA
Case: AG-IHVB190-3
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4kA
Technology: TRENCHSTOP™
Mechanical mounting: screw
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FS150R12KT4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 750W
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Case: AG-ECONO3-4
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 750W
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 3
Case: AG-ECONO3-4
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
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FF500R17KE4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 500A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 500A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 500A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mechanical mounting: screw
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FF300R17ME4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Case: AG-ECONOD-3
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
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FS150R17PE4BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 150A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Case: AG-ECONO4-1
Topology: IGBT three-phase bridge; NTC thermistor
Pulsed collector current: 300A
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FF900R12ME7B11BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: AG-ECONOD-5
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: TRENCHSTOP™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: AG-ECONOD-5
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: TRENCHSTOP™
Mechanical mounting: screw
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FS200R12KT4RB11BOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: EconoPACK™ 3
Mechanical mounting: screw
Power dissipation: 1kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: AG-ECONO3-4
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: EconoPACK™ 3
Mechanical mounting: screw
Power dissipation: 1kW
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FP75R12KE3BOSA1 |
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на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 9903.42 грн |
FS150R12KE3BOSA1 |
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на замовлення 190 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 11865.33 грн |
FS100R12KE3BOSA1 |
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на замовлення 86 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 9680.31 грн |
F3L300R07PE4PBOSA1 |
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на замовлення 202 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 13891.46 грн |
IRS2004STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 52.69 грн |
BCW67CE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 1380 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.64 грн |
41+ | 9.33 грн |
52+ | 7.40 грн |
100+ | 6.51 грн |
250+ | 5.81 грн |
255+ | 3.50 грн |
700+ | 3.31 грн |
BCW68FE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
71+ | 5.86 грн |
100+ | 4.87 грн |
239+ | 3.73 грн |
656+ | 3.53 грн |
3000+ | 3.48 грн |
BCW68GE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 57000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.54 грн |
BC817K40E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 90000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.73 грн |
BC817K40WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.22 грн |
BCP5316H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 7000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 10.04 грн |