Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149380) > Сторінка 2470 з 2490
Фото | Назва | Виробник | Інформація |
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AUIRGSL4062D1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262 Mounting: THT Kind of package: tube Technology: Trench Type of transistor: IGBT Case: TO262 Turn-on time: 35ns Gate charge: 77nC Turn-off time: 176ns Gate-emitter voltage: ±20V Collector current: 39A Pulsed collector current: 72A Power dissipation: 123W Collector-emitter voltage: 600V |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IRGSL4062DPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 48A; 250W; TO262 Mounting: THT Kind of package: tube Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO262 Collector current: 48A Power dissipation: 250W Collector-emitter voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
T501N70TOHXPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray Case: BG-T7626K-1 Mounting: Press-Pack Kind of package: in-tray Gate current: 350mA Load current: 640A Max. load current: 1kA Max. off-state voltage: 7kV Max. forward impulse current: 13.5kA Type of thyristor: hockey-puck Features of semiconductor devices: phase controlled thyristor (PCT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BC847BE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 1464 шт: термін постачання 21-30 дні (днів) |
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IPD90N04S304ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ T Gate charge: 60nC Drain current: 90A Power dissipation: 136W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC024NE2LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 25A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IR2130JTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IRF7493TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8 Kind of package: reel Case: SO8 Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2.5W Drain current: 9.2A Drain-source voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TD330N16KOFHPSA2 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 330A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 12.5kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 330A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TT330N16KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 330A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 10kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SPW32N50C3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3 Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 560V Drain current: 32A Power dissipation: 284W Case: TO247-3 Gate-source voltage: 20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 170nC Kind of channel: enhancement |
на замовлення 9396 шт: термін постачання 21-30 дні (днів) |
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IRS2127STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IRS2113MTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver Type of integrated circuit: driver |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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BSZ065N03LSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Drain-source voltage: 30V Drain current: 40A Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement Polarisation: unipolar Power dissipation: 26W Case: PG-TSDSON-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
ISZ065N03L5SATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 30V; 40A; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 30V Drain current: 40A Gate-source voltage: 20V On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhancement Electrical mounting: SMT |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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IPU50R1K4CEBKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar On-state resistance: 1.4Ω Drain current: 3.1A Gate-source voltage: ±20V Power dissipation: 25W Drain-source voltage: 500V Technology: CoolMOS™ CE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB011N04LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD On-state resistance: 1.1mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 180A Power dissipation: 250W Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TO263-7 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB011N04NGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD On-state resistance: 1.1mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 180A Power dissipation: 250W Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TO263-7 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPP011N04NF2SAKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 888 шт: термін постачання 21-30 дні (днів) |
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BSS169IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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IRL2910STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BFP450H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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IPP023N04NGXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 167W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF1018ESTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 315A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 848 шт: термін постачання 21-30 дні (днів) |
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TT250N18KOFHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: thyristor Gate current: 200mA Max. forward voltage: 1.5V Load current: 250A Max. off-state voltage: 1.8kV Max. forward impulse current: 7kA Case: BG-PB50-1 |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IPD047N03LF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT Technology: MOSFET Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 71A Power dissipation: 65W Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Electrical mounting: SMT On-state resistance: 4.7mΩ |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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BFR181E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 20mA Power dissipation: 0.175W Case: SOT23 Mounting: SMD Frequency: 8GHz Kind of package: reel; tape Current gain: 70...140 Kind of transistor: RF |
на замовлення 1395 шт: термін постачання 21-30 дні (днів) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: SIPMOS™ |
на замовлення 17438 шт: термін постачання 21-30 дні (днів) |
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IPB50R250CPATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 13A Power dissipation: 114W Gate-source voltage: ±20V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI60R250CPAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3 Technology: CoolMOS™ CP Kind of channel: enhancement Type of transistor: N-MOSFET Case: PG-TO262-3 Mounting: THT Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 12A Gate-source voltage: ±20V Power dissipation: 104W Drain-source voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP60R250CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BSC146N10LS5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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IKB06N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 188ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGD06N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 6A; 88W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 136ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKA06N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6.2A Power dissipation: 28W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 42nC Kind of package: tube Turn-on time: 15ns Turn-off time: 188ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKD06N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 128ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIHD06N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 19ns Turn-off time: 279ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIHD06N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 16ns Turn-off time: 127ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ16DN25NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Kind of channel: enhancement Drain current: 10.9A On-state resistance: 0.165Ω Power dissipation: 62.5W Gate-source voltage: ±20V Drain-source voltage: 250V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ42DN25NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8 Mounting: SMD Case: PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Kind of channel: enhancement Drain current: 5A On-state resistance: 0.425Ω Power dissipation: 33.8W Gate-source voltage: ±20V Drain-source voltage: 250V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PVG612AS-TPBF | INFINEON TECHNOLOGIES |
![]() Description: Relay: solid state Type of relay: solid state |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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IRF8010PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 260W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 81nC On-state resistance: 15mΩ |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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IRF7328TRPBFXTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF7328TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP048N04NGXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 79W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4207GXUMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14 Operating voltage: 8...18V DC Mounting: SMD Operating temperature: -40...150°C Type of integrated circuit: driver Integrated circuit features: fault detection Kind of integrated circuit: IMC; motor controller Topology: MOSFET half-bridge Case: PG-DSO-14 Kind of package: reel; tape Output current: 0.8A Number of channels: 2 |
на замовлення 2414 шт: термін постачання 21-30 дні (днів) |
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IRFR24N15DTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 24A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP60R120P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3 Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar On-state resistance: 0.12Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 95W Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: PG-TO220-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB60R120P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 36nC On-state resistance: 0.12Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 95W Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPW60R120P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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BTS70302EPAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape Operating temperature: -40...150°C Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Mounting: SMD Output current: 4.5A On-state resistance: 25mΩ Number of channels: 2 Supply voltage: 4.1...28V DC Kind of integrated circuit: high-side Case: PG-TSDSO-14 Technology: PROFET™+2 |
на замовлення 2969 шт: термін постачання 21-30 дні (днів) |
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BSC0902NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 4520 шт: термін постачання 21-30 дні (днів) |
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BSC0909NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 34V Drain current: 44A Power dissipation: 27W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 403 шт: термін постачання 21-30 дні (днів) |
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BSC030P03NS3GAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±25V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 3813 шт: термін постачання 21-30 дні (днів) |
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BSC028N06NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 2119 шт: термін постачання 21-30 дні (днів) |
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BSC340N08NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 23A Power dissipation: 32W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 5291 шт: термін постачання 21-30 дні (днів) |
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BSC093N04LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 3718 шт: термін постачання 21-30 дні (днів) |
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BSC080N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 35W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 1692 шт: термін постачання 21-30 дні (днів) |
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BSC0502NSIATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSC0902NSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 91A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
AUIRGSL4062D1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Type of transistor: IGBT
Case: TO262
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Mounting: THT
Kind of package: tube
Technology: Trench
Type of transistor: IGBT
Case: TO262
Turn-on time: 35ns
Gate charge: 77nC
Turn-off time: 176ns
Gate-emitter voltage: ±20V
Collector current: 39A
Pulsed collector current: 72A
Power dissipation: 123W
Collector-emitter voltage: 600V
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 221.68 грн |
3+ | 192.39 грн |
IRGSL4062DPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Mounting: THT
Kind of package: tube
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO262
Collector current: 48A
Power dissipation: 250W
Collector-emitter voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
T501N70TOHXPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Gate current: 350mA
Load current: 640A
Max. load current: 1kA
Max. off-state voltage: 7kV
Max. forward impulse current: 13.5kA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 7kV; Ifmax: 1kA; 640A; Igt: 350mA; in-tray
Case: BG-T7626K-1
Mounting: Press-Pack
Kind of package: in-tray
Gate current: 350mA
Load current: 640A
Max. load current: 1kA
Max. off-state voltage: 7kV
Max. forward impulse current: 13.5kA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase controlled thyristor (PCT)
товару немає в наявності
В кошику
од. на суму грн.
BC847BE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1464 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.94 грн |
46+ | 8.63 грн |
61+ | 6.59 грн |
100+ | 5.83 грн |
250+ | 5.00 грн |
364+ | 2.56 грн |
1000+ | 2.41 грн |
IPD90N04S304ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T
Gate charge: 60nC
Drain current: 90A
Power dissipation: 136W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T
Gate charge: 60nC
Drain current: 90A
Power dissipation: 136W
товару немає в наявності
В кошику
од. на суму грн.
BSC024NE2LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 25A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IR2130JTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
500+ | 355.54 грн |
IRF7493TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Kind of package: reel
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 9.2A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8
Kind of package: reel
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 9.2A
Drain-source voltage: 80V
товару немає в наявності
В кошику
од. на суму грн.
TD330N16KOFHPSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
товару немає в наявності
В кошику
од. на суму грн.
TT330N16KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
SPW32N50C3FKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 560V
Drain current: 32A
Power dissipation: 284W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 170nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 560V
Drain current: 32A
Power dissipation: 284W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 170nC
Kind of channel: enhancement
на замовлення 9396 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 339.34 грн |
90+ | 283.43 грн |
IRS2127STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 45.87 грн |
IRS2113MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 117.66 грн |
BSZ065N03LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Power dissipation: 26W
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Power dissipation: 26W
Case: PG-TSDSON-8
товару немає в наявності
В кошику
од. на суму грн.
ISZ065N03L5SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 40A; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 40A; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 30V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 17.99 грн |
IPU50R1K4CEBKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.4Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 1.4Ω
Drain current: 3.1A
Gate-source voltage: ±20V
Power dissipation: 25W
Drain-source voltage: 500V
Technology: CoolMOS™ CE
товару немає в наявності
В кошику
од. на суму грн.
IPB011N04LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
IPB011N04NGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
On-state resistance: 1.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TO263-7
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
IPP011N04NF2SAKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 888 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 131.30 грн |
250+ | 110.05 грн |
BSS169IXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.36 грн |
IRL2910STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BFP450H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.84 грн |
IPP023N04NGXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRF1018ESTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 56A; Idm: 315A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 848 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 108.28 грн |
5+ | 83.92 грн |
10+ | 76.00 грн |
20+ | 46.71 грн |
55+ | 44.34 грн |
TT250N18KOFHPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.5V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7kA
Case: BG-PB50-1
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.5V
Load current: 250A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 7kA
Case: BG-PB50-1
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 14920.78 грн |
IPD047N03LF2SATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
On-state resistance: 4.7mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 71A; 65W; DPAK; SMT
Technology: MOSFET
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Electrical mounting: SMT
On-state resistance: 4.7mΩ
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2000+ | 22.00 грн |
BFR181E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT23
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
Current gain: 70...140
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 20mA; 0.175W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT23
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
Current gain: 70...140
Kind of transistor: RF
на замовлення 1395 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.20 грн |
32+ | 12.51 грн |
36+ | 11.00 грн |
43+ | 9.42 грн |
100+ | 7.84 грн |
135+ | 6.97 грн |
370+ | 6.57 грн |
BSS83PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 17438 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.02 грн |
28+ | 14.57 грн |
35+ | 11.56 грн |
50+ | 9.66 грн |
100+ | 8.15 грн |
228+ | 4.12 грн |
625+ | 3.88 грн |
IPB50R250CPATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Power dissipation: 114W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 13A
Power dissipation: 114W
Gate-source voltage: ±20V
Drain-source voltage: 500V
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IPI60R250CPAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO262-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 104W
Drain-source voltage: 600V
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IPP60R250CPXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSC146N10LS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 41.44 грн |
IKB06N60TATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
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IGD06N60TATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
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IKA06N60TXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
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IKD06N60RFATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
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AIHD06N60RATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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AIHD06N60RFATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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BSZ16DN25NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 10.9A
On-state resistance: 0.165Ω
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 10.9A
On-state resistance: 0.165Ω
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain-source voltage: 250V
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BSZ42DN25NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 5A
On-state resistance: 0.425Ω
Power dissipation: 33.8W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; 33.8W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
Drain current: 5A
On-state resistance: 0.425Ω
Power dissipation: 33.8W
Gate-source voltage: ±20V
Drain-source voltage: 250V
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PVG612AS-TPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
750+ | 753.71 грн |
IRF8010PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 81nC
On-state resistance: 15mΩ
на замовлення 90 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 83.13 грн |
10+ | 77.59 грн |
17+ | 55.42 грн |
47+ | 53.04 грн |
IRF7328TRPBFXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 8A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF7328TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPP048N04NGXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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TLE4207GXUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Output current: 0.8A
Number of channels: 2
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Output current: 0.8A
Number of channels: 2
на замовлення 2414 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 82.70 грн |
10+ | 73.63 грн |
13+ | 72.84 грн |
25+ | 69.67 грн |
36+ | 68.88 грн |
100+ | 66.50 грн |
IRFR24N15DTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPP60R120P7 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: PG-TO220-3
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IPB60R120P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 95W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: D2PAK
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IPW60R120P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 187.58 грн |
BTS70302EPAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Operating temperature: -40...150°C
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
Output current: 4.5A
On-state resistance: 25mΩ
Number of channels: 2
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Case: PG-TSDSO-14
Technology: PROFET™+2
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Operating temperature: -40...150°C
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
Output current: 4.5A
On-state resistance: 25mΩ
Number of channels: 2
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Case: PG-TSDSO-14
Technology: PROFET™+2
на замовлення 2969 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 99.76 грн |
10+ | 89.46 грн |
BSC0902NSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 4520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.21 грн |
8+ | 54.47 грн |
10+ | 49.40 грн |
23+ | 41.88 грн |
50+ | 38.08 грн |
BSC0909NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 403 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.83 грн |
10+ | 39.82 грн |
54+ | 17.50 грн |
147+ | 16.55 грн |
BSC030P03NS3GAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 3813 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.38 грн |
5+ | 110.05 грн |
10+ | 98.17 грн |
16+ | 60.17 грн |
43+ | 56.21 грн |
1000+ | 54.63 грн |
BSC028N06NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 2119 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 161.14 грн |
10+ | 104.51 грн |
11+ | 84.71 грн |
31+ | 79.96 грн |
250+ | 76.80 грн |
BSC340N08NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 5291 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.30 грн |
11+ | 38.24 грн |
51+ | 18.53 грн |
139+ | 17.50 грн |
5000+ | 16.86 грн |
BSC093N04LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 3718 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.19 грн |
13+ | 31.27 грн |
31+ | 30.96 грн |
50+ | 28.58 грн |
BSC080N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1692 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.63 грн |
14+ | 29.85 грн |
39+ | 23.99 грн |
107+ | 22.64 грн |
1000+ | 22.09 грн |
BSC0502NSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
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од. на суму грн.
BSC0902NSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.