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S70GL02GT11FHB013 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
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S70GL02GT11FHI010 INFINEON TECHNOLOGIES Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 2Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
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FM25L16B-DG INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
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FM25L16B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
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CY7C1312KV18-250BZXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Memory: 18Mb SRAM
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Kind of interface: parallel
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FM25CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
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FM25L04B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
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FM25V05-GTR INFINEON TECHNOLOGIES Infineon-FM25V05_512-Kbit_(64_K_8)_Serial_(SPI)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe00d53121&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Kind of package: reel; tape
Memory: 512kb FRAM
Case: SOIC8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
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FM25V10-DG INFINEON TECHNOLOGIES Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Memory: 1Mb FRAM
Case: DFN8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
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S25FL128LAGNFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
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TLV4906KFTSA1 TLV4906KFTSA1 INFINEON TECHNOLOGIES TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)
15+28.82 грн
25+21.48 грн
43+21.25 грн
50+19.88 грн
75+19.34 грн
117+19.27 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
IRFSL7440PBF IRFSL7440PBF INFINEON TECHNOLOGIES irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
6+64.98 грн
10+56.57 грн
19+48.93 грн
50+46.63 грн
Мінімальне замовлення: 6
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S25HS02GTDPBHB053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
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S25HS02GTDPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
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S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
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S28HS02GTFPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
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CY62168EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=50111 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62168EV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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BFQ19SH6327XTSA1 BFQ19SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C0C542C2A11C&compId=BFQ19SH6327XTSA1-dte.pdf?ci_sign=308d2c563328e90936001c00c9e93dc4a527b52a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
на замовлення 722 шт:
термін постачання 21-30 дні (днів)
10+45.28 грн
12+34.02 грн
43+21.02 грн
118+19.88 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRFSL4510PBF IRFSL4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8C9AD0E015EA&compId=IRFSL4510PBF.pdf?ci_sign=b37f1d0d62505b5298aa4ab906aa8bf121bff388 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Case: TO262
Drain-source voltage: 100V
Drain current: 64A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhancement
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IPB65R110CFDATMA1 IPB65R110CFDATMA1 INFINEON TECHNOLOGIES IPB65R110CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Mounting: SMD
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
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IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 107W
Case: PG-TO220-3
Mounting: THT
Drain current: 13.3A
On-state resistance: 0.1Ω
Technology: OptiMOS™ T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Drain-source voltage: 250V
на замовлення 482 шт:
термін постачання 21-30 дні (днів)
3+139.96 грн
4+123.85 грн
10+117.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IMW120R030M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fde38b669a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 45A
Pulsed drain current: 150A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...23V
On-state resistance: 57mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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TLE4946KHTSA1 INFINEON TECHNOLOGIES TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379 Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Type of sensor: Hall
Range of detectable magnetic field: -19...19mT
Operating temperature: -40...150°C
Case: SC59
Supply voltage: 2.7...18V DC
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IRF7495TRPBF IRF7495TRPBF INFINEON TECHNOLOGIES irf7495pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA7A7AA8BC143&compId=IPU95R750P7.pdf?ci_sign=472403093c92524bad78203a01b30d3031a576e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Version: ESD
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
4+102.91 грн
5+86.39 грн
14+67.28 грн
37+63.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TT210N12KOF TT210N12KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE521B282F6469&compId=TT210N12KOF.pdf?ci_sign=f7eaf7806bc8e7ae42f1597e6f4e3ad04450ee9d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+6255.40 грн
В кошику  од. на суму  грн.
IRF6218STRLPBF IRF6218STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F676E2293A6F1A303005056AB0C4F&compId=irf6218spbf.pdf?ci_sign=b2d854f32eaee6ca2234c84bf89ef10ff97de354 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFP4332PBF IRFP4332PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C068F1A6F5005056AB5A8F&compId=irfp4332pbf.pdf?ci_sign=e2b517b35bae67aea1d77543e68108c262ec792d description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Mounting: THT
Drain-source voltage: 250V
Drain current: 57A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO247AC
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
2+340.02 грн
6+175.07 грн
15+165.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRLP3034PBF IRLP3034PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58261FF1A6F5005056AB5A8F&compId=irlp3034pbf.pdf?ci_sign=9128909fc18795a56482a4b00afac011ad104a23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Case: TO247AC
Drain-source voltage: 40V
Drain current: 327A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 341W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 108nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
2+364.72 грн
6+163.60 грн
16+154.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFP7430PBF IRFP7430PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEB797742D5EA&compId=IRFP7430PBF.pdf?ci_sign=00881c1d66098117f06e4885f5e79cb15cc02fd0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Drain-source voltage: 40V
Drain current: 404A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 366W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO247AC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
2+225.58 грн
8+114.67 грн
22+108.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2118PBF IR2118PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
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S29AL008J55BFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J55BFIR22 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
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S29AL008J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
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S29AL008J70BAN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI022 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
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S29AL008J70BFM023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70BFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70TFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70TFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70TFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70TFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
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SPD30P06PGBTMA1 SPD30P06PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D8893CBA51CC&compId=SPD30P06PGBTMA1-DTE.pdf?ci_sign=1336cadb1b80dbd9173ab792431c3392d8afa7d0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1599 шт:
термін постачання 21-30 дні (днів)
4+108.68 грн
10+81.80 грн
16+58.10 грн
43+55.04 грн
250+52.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAS7007E6327 BAS7007E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
на замовлення 2570 шт:
термін постачання 21-30 дні (днів)
20+20.58 грн
27+14.60 грн
100+9.79 грн
149+6.04 грн
411+5.73 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRLR3410TRLPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
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В кошику  од. на суму  грн.
FF300R12KS4 FF300R12KS4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+15091.01 грн
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 BSC120N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA054235A211C&compId=BSC120N03LSG-DTE.pdf?ci_sign=946238703efb8cfb797f73bad01e4f824095455e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 33A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
товару немає в наявності
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BSC120N03MSGATMA1 BSC120N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA2C2B695E11C&compId=BSC120N03MSG-DTE.pdf?ci_sign=1534942e68b54aa8c7996b16f304df746fc732c3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 36A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
товару немає в наявності
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61FB8EFEF35EA&compId=BCX41.pdf?ci_sign=88a196f359f0852bc6b8b0beaffb5759891cb7d5 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
на замовлення 831 шт:
термін постачання 21-30 дні (днів)
24+17.29 грн
32+12.00 грн
100+7.87 грн
157+5.73 грн
430+5.43 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BAS170WE6327HTSA1 BAS170WE6327HTSA1 INFINEON TECHNOLOGIES BAS170WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Mounting: SMD
на замовлення 3038 шт:
термін постачання 21-30 дні (днів)
17+25.52 грн
28+13.68 грн
38+10.15 грн
50+8.21 грн
100+6.83 грн
208+4.30 грн
571+4.07 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
S70GL02GT11FHB013
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
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S70GL02GT11FHI010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 2Gb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
товару немає в наявності
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FM25L16B-DG Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
товару немає в наявності
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FM25L16B-DGTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 16kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
товару немає в наявності
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CY7C1312KV18-250BZXCT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Memory: 18Mb SRAM
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
Kind of memory: SRAM
Memory organisation: 1Mx18bit
Kind of interface: parallel
товару немає в наявності
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FM25CL64B-DGTR Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 64kb FRAM
Case: DFN8
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
товару немає в наявності
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FM25L04B-DGTR Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 512x8bit
Clock frequency: 20MHz
Kind of package: reel; tape
Memory: 4kb FRAM
Case: DFN8
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
товару немає в наявності
В кошику  од. на суму  грн.
FM25V05-GTR Infineon-FM25V05_512-Kbit_(64_K_8)_Serial_(SPI)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe00d53121&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Kind of package: reel; tape
Memory: 512kb FRAM
Case: SOIC8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
товару немає в наявності
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FM25V10-DG Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Memory: 1Mb FRAM
Case: DFN8
Supply voltage: 2...3.6V DC
Type of integrated circuit: FRAM memory
Interface: SPI
Kind of memory: FRAM
товару немає в наявності
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S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Mounting: SMD
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TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
на замовлення 2320 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.82 грн
25+21.48 грн
43+21.25 грн
50+19.88 грн
75+19.34 грн
117+19.27 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
IRFSL7440PBF irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5
IRFSL7440PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 106 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+64.98 грн
10+56.57 грн
19+48.93 грн
50+46.63 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
S25HS02GTDPBHB053
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Application: automotive
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
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S25HS02GTDPBHV053
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
товару немає в наявності
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S28HS02GTFPBHV050
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: in-tray
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
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S28HS02GTFPBHV053
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Kind of package: reel; tape
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
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CY62168EV30LL-45BVXIT ?docID=50111
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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CY62168EV30LL-45BVXI Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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BFQ19SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C0C542C2A11C&compId=BFQ19SH6327XTSA1-dte.pdf?ci_sign=308d2c563328e90936001c00c9e93dc4a527b52a
BFQ19SH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
на замовлення 722 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.28 грн
12+34.02 грн
43+21.02 грн
118+19.88 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRFSL4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8C9AD0E015EA&compId=IRFSL4510PBF.pdf?ci_sign=b37f1d0d62505b5298aa4ab906aa8bf121bff388
IRFSL4510PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Case: TO262
Drain-source voltage: 100V
Drain current: 64A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhancement
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IPB65R110CFDATMA1 IPB65R110CFD-DTE.pdf
IPB65R110CFDATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Mounting: SMD
Drain-source voltage: 650V
Drain current: 31.2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 277.8W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TO263-3
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IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 107W
Case: PG-TO220-3
Mounting: THT
Drain current: 13.3A
On-state resistance: 0.1Ω
Technology: OptiMOS™ T
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Drain-source voltage: 250V
на замовлення 482 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+139.96 грн
4+123.85 грн
10+117.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IMW120R030M1HXKSA1 Infineon-IMW120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fde38b669a
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 45A
Pulsed drain current: 150A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...23V
On-state resistance: 57mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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TLE4946KHTSA1 TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Type of sensor: Hall
Range of detectable magnetic field: -19...19mT
Operating temperature: -40...150°C
Case: SC59
Supply voltage: 2.7...18V DC
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IRF7495TRPBF irf7495pbf.pdf
IRF7495TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPU95R750P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA7A7AA8BC143&compId=IPU95R750P7.pdf?ci_sign=472403093c92524bad78203a01b30d3031a576e3
IPU95R750P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Version: ESD
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+102.91 грн
5+86.39 грн
14+67.28 грн
37+63.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TT210N12KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE521B282F6469&compId=TT210N12KOF.pdf?ci_sign=f7eaf7806bc8e7ae42f1597e6f4e3ad04450ee9d
TT210N12KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 210A
Case: BG-PB50-1
Max. forward voltage: 1.65V
Max. forward impulse current: 6.6kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6255.40 грн
В кошику  од. на суму  грн.
IRF6218STRLPBF pVersion=0046&contRep=ZT&docId=E21F676E2293A6F1A303005056AB0C4F&compId=irf6218spbf.pdf?ci_sign=b2d854f32eaee6ca2234c84bf89ef10ff97de354
IRF6218STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFP4332PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C068F1A6F5005056AB5A8F&compId=irfp4332pbf.pdf?ci_sign=e2b517b35bae67aea1d77543e68108c262ec792d
IRFP4332PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Mounting: THT
Drain-source voltage: 250V
Drain current: 57A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 360W
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: TO247AC
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+340.02 грн
6+175.07 грн
15+165.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRLP3034PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58261FF1A6F5005056AB5A8F&compId=irlp3034pbf.pdf?ci_sign=9128909fc18795a56482a4b00afac011ad104a23
IRLP3034PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Case: TO247AC
Drain-source voltage: 40V
Drain current: 327A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 341W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 108nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+364.72 грн
6+163.60 грн
16+154.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFP7430PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEB797742D5EA&compId=IRFP7430PBF.pdf?ci_sign=00881c1d66098117f06e4885f5e79cb15cc02fd0
IRFP7430PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Drain-source voltage: 40V
Drain current: 404A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 366W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO247AC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+225.58 грн
8+114.67 грн
22+108.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2118PBF pVersion=0046&contRep=ZT&docId=E1C04E2EFD3420F1A6F5005056AB5A8F&compId=ir2117.pdf?ci_sign=047270bf8309783ecfbd92bf3abf45a491f0b645
IR2118PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
товару немає в наявності
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S29AL008J55BFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
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S29AL008J55BFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J55BFIR22 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J55TFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J55TFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
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S29AL008J55TFNR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
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S29AL008J55TFNR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 3...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
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S29AL008J70BAN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70BFI010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
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S29AL008J70BFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70BFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70BFI022 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70BFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70BFM023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Application: automotive
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70BFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70BFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Case: VFBGA48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
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S29AL008J70TFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
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S29AL008J70TFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
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S29AL008J70TFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
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S29AL008J70TFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 8Mb FLASH
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
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SPD30P06PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D8893CBA51CC&compId=SPD30P06PGBTMA1-DTE.pdf?ci_sign=1336cadb1b80dbd9173ab792431c3392d8afa7d0
SPD30P06PGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1599 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+108.68 грн
10+81.80 грн
16+58.10 грн
43+55.04 грн
250+52.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAS7007E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7007E6327
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
на замовлення 2570 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+20.58 грн
27+14.60 грн
100+9.79 грн
149+6.04 грн
411+5.73 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Gate-source voltage: ±16V
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FF300R12KS4 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62
FF300R12KS4
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+15091.01 грн
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA054235A211C&compId=BSC120N03LSG-DTE.pdf?ci_sign=946238703efb8cfb797f73bad01e4f824095455e
BSC120N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 33A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
BSC120N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA2C2B695E11C&compId=BSC120N03MSG-DTE.pdf?ci_sign=1534942e68b54aa8c7996b16f304df746fc732c3
BSC120N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 30V
Drain current: 36A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
BCX41E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD61FB8EFEF35EA&compId=BCX41.pdf?ci_sign=88a196f359f0852bc6b8b0beaffb5759891cb7d5
BCX41E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
на замовлення 831 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.29 грн
32+12.00 грн
100+7.87 грн
157+5.73 грн
430+5.43 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BAS170WE6327HTSA1 BAS170WE6327HTSA1.pdf
BAS170WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Mounting: SMD
на замовлення 3038 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.52 грн
28+13.68 грн
38+10.15 грн
50+8.21 грн
100+6.83 грн
208+4.30 грн
571+4.07 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
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