Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149642) > Сторінка 2469 з 2495

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Фото Назва Виробник Інформація Доступність
Ціна
BA885E6327 BA885E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999BC51ABD17E27&compId=BAx95-DTE.pdf?ci_sign=2fc9f1d8e133c7a4c3202608515580a89c97324a Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
на замовлення 1201 шт:
термін постачання 21-30 дні (днів)
107+4.09 грн
109+3.72 грн
Мінімальне замовлення: 107
В кошику  од. на суму  грн.
BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D950ECCBD011C&compId=BSC109N10NS3G-DTE.pdf?ci_sign=73b03e08e383856ad99c6b662e0bfa1e3d0a5de9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.9mΩ
Drain current: 63A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)
34+13.06 грн
44+9.38 грн
100+6.48 грн
500+4.85 грн
1000+4.25 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
IRF3805PBF IRF3805PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
3+212.50 грн
10+131.01 грн
50+117.26 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3805STRL-7PP IRF3805STRL-7PP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRF3610STRLPBF IRF3610STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
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TLE7258SJXUMA1 TLE7258SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
на замовлення 2416 шт:
термін постачання 21-30 дні (днів)
8+57.48 грн
10+44.48 грн
25+40.43 грн
100+35.42 грн
250+35.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPB035N08N3GATMA1 IPB035N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB3C44E35211C&compId=IPB035N08N3G-DTE.pdf?ci_sign=21c5de3139bc2864bea66c1d6aed3968809828d3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
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BSC105N10LSFGATMA1 BSC105N10LSFGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D78CCFF2B411C&compId=BSC105N10LSFG-DTE.pdf?ci_sign=32f6b127d23e115ccf0cd1ecc059a3e7f4f9f4b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.5mΩ
Drain current: 90A
Gate-source voltage: ±20V
Power dissipation: 156W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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IRF40R207 IRF40R207 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDD1A753CD6143&compId=IRF40R207.pdf?ci_sign=4cd6fca78f66572d898b62deac93256e3bb94244 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
на замовлення 596 шт:
термін постачання 21-30 дні (днів)
10+47.90 грн
12+35.74 грн
50+30.00 грн
100+27.66 грн
250+24.58 грн
500+22.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRF40B207 IRF40B207 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDC51618816143&compId=IRF40B207.pdf?ci_sign=12d3808b9e66cb40651b76a6f2b50069792efd39 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+435.44 грн
В кошику  од. на суму  грн.
IRF40H233XTMA1 INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIRF4104STRL AUIRF4104STRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
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S29AL016J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J55FFAR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J55TFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE1C27307C853D7&compId=BBY55_SER.pdf?ci_sign=d48aad07f34ac66a1ba9f25efc85af0438e4f4db Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 16V
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Leakage current: 0.1µA
Capacitance: 5.5...19.6pF
Features of semiconductor devices: RF
на замовлення 1979 шт:
термін постачання 21-30 дні (днів)
21+20.90 грн
25+16.17 грн
27+15.04 грн
28+14.56 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
ICL5101XUMA1 ICL5101XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDD56421C0ADE27&compId=ICL5101-DTE.pdf?ci_sign=ad687447ec2b258006ed4a814b7124edc5aab753 Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
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TLE6232GPAUMA2 TLE6232GPAUMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8942C4BC6A6143&compId=TLE6232GP.pdf?ci_sign=24e0445975d30b12ea03dfdacbe39036b23c1eb4 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.55...1.1A
Technology: FLEX
Number of channels: 6
Kind of output: N-Channel
Turn-on time: 10µs
Turn-off time: 10µs
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TLE6251-2G TLE6251-2G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0BA68F3690A14&compId=TLE6251-2G.pdf?ci_sign=74c5e0fe904ed5d2f66a2c97797acfae64a2d9da Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
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IR2132STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC4C2806A011C&compId=IPP024N06N3G-DTE.pdf?ci_sign=50db48bc36890d6860fe3ae63f8a687849e4e47e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
2+379.70 грн
3+303.25 грн
10+243.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI024N06N3GXKSA1 IPI024N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69966EB25DC411C&compId=IPI024N06N3G-DTE.pdf?ci_sign=af4669f0517a60affc571042607d4f14e1306ced Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
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S29AL016J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70BAI010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J70BAI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFA010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J70BFA013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S29AL016J70BFA023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S29AL016J70BFI012 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFN010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70BFN020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70FFI012 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70FFI020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J70FFI022 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70FFM020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S29AL016J70TFA020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J70TFN010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70TFN013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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S29AL016J70TFN020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70TFN023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IPB054N06N3GATMA1 IPB054N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5EC939E60811C&compId=IPB054N06N3G-DTE.pdf?ci_sign=84f615a05cf8a8d54ec1b710306fbe75a60d1fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IDM02G120C5XTMA1 IDM02G120C5XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA3490FE516FA8&compId=IDM02G120C5-DTE.pdf?ci_sign=39f02fd9a145e2170f3e498cb765e81a39c4fb99 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Mounting: SMD
Case: PG-TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1.2µA
Load current: 2A
Power dissipation: 98W
Max. forward voltage: 1.4V
Max. forward impulse current: 31A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: CoolSiC™ 5G; SiC
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BSC014N06NSATMA1 BSC014N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25F431FB8811C&compId=BSC014N06NS-DTE.pdf?ci_sign=89be9cef3c84b02cc52bd76782f1cbbbafd2f7d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
на замовлення 1380 шт:
термін постачання 21-30 дні (днів)
46+9.58 грн
55+7.36 грн
77+5.27 грн
100+4.41 грн
250+3.46 грн
500+3.03 грн
Мінімальне замовлення: 46
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AUIRFR8405TRL INFINEON TECHNOLOGIES INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
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S25FL128SAGMFIR11 INFINEON TECHNOLOGIES infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Type of integrated circuit: FLASH memory
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S25FL256SAGMFIR11 INFINEON TECHNOLOGIES infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 256Mb FLASH
Type of integrated circuit: FLASH memory
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S25FL512SAGMFIR11 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
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AUIRFB8407 AUIRFB8407 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBEF63752B5EA&compId=AUIRFB8407.pdf?ci_sign=77c7432b80b269846f5e47385d4aa9b20e3cd3ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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AUIRFSL8407 AUIRFSL8407 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBE382C02195EA&compId=AUIRFSL8407.pdf?ci_sign=4c0550a9897f895e27738a49f082a991e26f4267 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
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IRF7380TRPBF IRF7380TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A1416FA3A7F1A303005056AB0C4F&compId=irf7380pbf.pdf?ci_sign=43b47160500444f3ece01f173324f425d2669bea Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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AUIRFB8405 AUIRFB8405 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBC936327F5EA&compId=AUIRFB8405.pdf?ci_sign=7b480d6d4381ed9eff5cd4a93dd04a3a2f195ed0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
2+343.13 грн
3+281.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRFB8409 AUIRFB8409 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBC0B3419C15EA&compId=AUIRFB8409.pdf?ci_sign=7f12e48652dc15e699fd5e099a6f836db55a2bbf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
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SPP18P06PHXKSA1 SPP18P06PHXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E1526F3291CC&compId=SPP18P06PHXKSA1-DTE.pdf?ci_sign=31d8bff6b49e66865ad7bc0fc966b6524742fb2f Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
3+149.79 грн
5+129.39 грн
10+117.26 грн
19+50.95 грн
51+48.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BA885E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A999BC51ABD17E27&compId=BAx95-DTE.pdf?ci_sign=2fc9f1d8e133c7a4c3202608515580a89c97324a
BA885E6327
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
на замовлення 1201 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
107+4.09 грн
109+3.72 грн
Мінімальне замовлення: 107
В кошику  од. на суму  грн.
BSC109N10NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D950ECCBD011C&compId=BSC109N10NS3G-DTE.pdf?ci_sign=73b03e08e383856ad99c6b662e0bfa1e3d0a5de9
BSC109N10NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.9mΩ
Drain current: 63A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
товару немає в наявності
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BAS7005WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7005WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.06 грн
44+9.38 грн
100+6.48 грн
500+4.85 грн
1000+4.25 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
IRF3805PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7ADAF1A6F5005056AB5A8F&compId=irf3805.pdf?ci_sign=b1f89a3f622ec38eb379399dfb2e700a67186d8d
IRF3805PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+212.50 грн
10+131.01 грн
50+117.26 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF3805STRL-7PP pVersion=0046&contRep=ZT&docId=E21F628A62DE73F1A303005056AB0C4F&compId=irf3805s-7ppbf.pdf?ci_sign=c4df994e7b162fcc0e0cfd81692e30268d46ac41
IRF3805STRL-7PP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRF3610STRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDBA92288AC143&compId=IRF3610STRLPBF.pdf?ci_sign=95fdba56d7c40ac1aecdbfbb4c03f02b5478e3e1
IRF3610STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
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TLE7258SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE797AE5052B3AFC748&compId=TLE7258.pdf?ci_sign=fb47dd87523959ba8ff4c5c2ed4ff13300dd97c8
TLE7258SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
на замовлення 2416 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.48 грн
10+44.48 грн
25+40.43 грн
100+35.42 грн
250+35.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPB035N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAB3C44E35211C&compId=IPB035N08N3G-DTE.pdf?ci_sign=21c5de3139bc2864bea66c1d6aed3968809828d3
IPB035N08N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
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BSC105N10LSFGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D78CCFF2B411C&compId=BSC105N10LSFG-DTE.pdf?ci_sign=32f6b127d23e115ccf0cd1ecc059a3e7f4f9f4b8
BSC105N10LSFGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 156W; PG-TDSON-8
Mounting: SMD
On-state resistance: 10.5mΩ
Drain current: 90A
Gate-source voltage: ±20V
Power dissipation: 156W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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IRF40R207 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDD1A753CD6143&compId=IRF40R207.pdf?ci_sign=4cd6fca78f66572d898b62deac93256e3bb94244
IRF40R207
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 64A
Power dissipation: 83W
на замовлення 596 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+47.90 грн
12+35.74 грн
50+30.00 грн
100+27.66 грн
250+24.58 грн
500+22.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IRF40B207 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBDC51618816143&compId=IRF40B207.pdf?ci_sign=12d3808b9e66cb40651b76a6f2b50069792efd39
IRF40B207
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 67A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 45nC
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+435.44 грн
В кошику  од. на суму  грн.
IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
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AUIRF4104STRL pVersion=0046&contRep=ZT&docId=E1C045883D5255F1A6F5005056AB5A8F&compId=auirf4104.pdf?ci_sign=925a57986ee2188c36cc97181d621bea692e9156
AUIRF4104STRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Technology: HEXFET®
Case: D2PAK
Kind of channel: enhancement
Kind of package: reel
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 10mΩ
Power dissipation: 140W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 120A
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S29AL016J55BFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J55FFAR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J55TFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J55TFIR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J55TFIR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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BBY5502VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89AE1C27307C853D7&compId=BBY55_SER.pdf?ci_sign=d48aad07f34ac66a1ba9f25efc85af0438e4f4db
BBY5502VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Mounting: SMD
Max. off-state voltage: 16V
Load current: 20mA
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SC79
Leakage current: 0.1µA
Capacitance: 5.5...19.6pF
Features of semiconductor devices: RF
на замовлення 1979 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.90 грн
25+16.17 грн
27+15.04 грн
28+14.56 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
ICL5101XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACDD56421C0ADE27&compId=ICL5101-DTE.pdf?ci_sign=ad687447ec2b258006ed4a814b7124edc5aab753
ICL5101XUMA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
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TLE6232GPAUMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8942C4BC6A6143&compId=TLE6232GP.pdf?ci_sign=24e0445975d30b12ea03dfdacbe39036b23c1eb4
TLE6232GPAUMA2
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.55...1.1A
Technology: FLEX
Number of channels: 6
Kind of output: N-Channel
Turn-on time: 10µs
Turn-off time: 10µs
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TLE6251-2G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEB0BA68F3690A14&compId=TLE6251-2G.pdf?ci_sign=74c5e0fe904ed5d2f66a2c97797acfae64a2d9da
TLE6251-2G
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; 80mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
товару немає в наявності
В кошику  од. на суму  грн.
IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
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IPP024N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC4C2806A011C&compId=IPP024N06N3G-DTE.pdf?ci_sign=50db48bc36890d6860fe3ae63f8a687849e4e47e
IPP024N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+379.70 грн
3+303.25 грн
10+243.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI024N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69966EB25DC411C&compId=IPI024N06N3G-DTE.pdf?ci_sign=af4669f0517a60affc571042607d4f14e1306ced
IPI024N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
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S29AL016J55TFNR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J55TFNR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BAI010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BAI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFA010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFA013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFA023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFI012 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFI013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFN010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFN020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70FFI012 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70FFI020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70FFI022 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70FFM020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFA020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFN010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFN013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFN020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFN023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IPB054N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5EC939E60811C&compId=IPB054N06N3G-DTE.pdf?ci_sign=84f615a05cf8a8d54ec1b710306fbe75a60d1fe9
IPB054N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику  од. на суму  грн.
IDM02G120C5XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA3490FE516FA8&compId=IDM02G120C5-DTE.pdf?ci_sign=39f02fd9a145e2170f3e498cb765e81a39c4fb99
IDM02G120C5XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Mounting: SMD
Case: PG-TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1.2µA
Load current: 2A
Power dissipation: 98W
Max. forward voltage: 1.4V
Max. forward impulse current: 31A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: CoolSiC™ 5G; SiC
товару немає в наявності
В кошику  од. на суму  грн.
BSC014N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25F431FB8811C&compId=BSC014N06NS-DTE.pdf?ci_sign=89be9cef3c84b02cc52bd76782f1cbbbafd2f7d6
BSC014N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BAT5402VH6327XTSA1 BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf
BAT5402VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
на замовлення 1380 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.58 грн
55+7.36 грн
77+5.27 грн
100+4.41 грн
250+3.46 грн
500+3.03 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
AUIRFR8405TRL INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
товару немає в наявності
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S25FL128SAGMFIR11 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Type of integrated circuit: FLASH memory
товару немає в наявності
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S25FL256SAGMFIR11 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 256Mb FLASH
Type of integrated circuit: FLASH memory
товару немає в наявності
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S25FL512SAGMFIR11 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
товару немає в наявності
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AUIRFB8407 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBEF63752B5EA&compId=AUIRFB8407.pdf?ci_sign=77c7432b80b269846f5e47385d4aa9b20e3cd3ad
AUIRFB8407
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику  од. на суму  грн.
AUIRFSL8407 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBE382C02195EA&compId=AUIRFSL8407.pdf?ci_sign=4c0550a9897f895e27738a49f082a991e26f4267
AUIRFSL8407
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
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IRF7380TRPBF pVersion=0046&contRep=ZT&docId=E221A1416FA3A7F1A303005056AB0C4F&compId=irf7380pbf.pdf?ci_sign=43b47160500444f3ece01f173324f425d2669bea
IRF7380TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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AUIRFB8405 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBC936327F5EA&compId=AUIRFB8405.pdf?ci_sign=7b480d6d4381ed9eff5cd4a93dd04a3a2f195ed0
AUIRFB8405
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+343.13 грн
3+281.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRFB8409 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBC0B3419C15EA&compId=AUIRFB8409.pdf?ci_sign=7f12e48652dc15e699fd5e099a6f836db55a2bbf
AUIRFB8409
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику  од. на суму  грн.
SPP18P06PHXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E1526F3291CC&compId=SPP18P06PHXKSA1-DTE.pdf?ci_sign=31d8bff6b49e66865ad7bc0fc966b6524742fb2f
SPP18P06PHXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+149.79 грн
5+129.39 грн
10+117.26 грн
19+50.95 грн
51+48.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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