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CY62147EV30LL-45B2XIT INFINEON TECHNOLOGIES ?docID=45537 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
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IRFS3004TRL7PP INFINEON TECHNOLOGIES irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRFH4234TRPBF IRFH4234TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F08978C0BD61EC&compId=irfh4234pbf.pdf?ci_sign=95709b25779a1ca2b7065525af8bb5dc0ea0c9db Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Trade name: FastIRFET
Drain-source voltage: 25V
Drain current: 22A
Type of transistor: N-MOSFET
Power dissipation: 3.5W
на замовлення 1647 шт:
термін постачання 21-30 дні (днів)
24+17.29 грн
Мінімальне замовлення: 24
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CY62177EV30LL-55BAXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62177EV18LL-70BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
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CY62177EV30LL-55ZXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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IRLHM620TRPBF IRLHM620TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22277530C4B63F1A303005056AB0C4F&compId=irlhm620pbf.pdf?ci_sign=c886920d7c2600102cb1c0b26f09f61fd0a26f02 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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ICE5GR1680AGXUMA1 ICE5GR1680AGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F285348280EA18&compId=ICE5xRxxxxAG.pdf?ci_sign=9c829b5b683ea7948ea94422704a94b91a4ceeb5 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 125kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Mounting: SMD
Case: PG-DSO-12
Operating temperature: -40...140°C
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Power: 48/27/28W
Operating voltage: 10...25.5V DC
Frequency: 125kHz
Breakdown voltage: 800V
Output current: 5.8A
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
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IPP055N08NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
50+71.63 грн
Мінімальне замовлення: 50
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S70GL02GT12FHAV10 INFINEON TECHNOLOGIES download Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Application: automotive
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
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S70GL02GT12FHIV10 INFINEON TECHNOLOGIES Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
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S70GL02GT12FHIV13 INFINEON TECHNOLOGIES download Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
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S70GL02GT12FHIV23 INFINEON TECHNOLOGIES download Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Case: SC74
Mounting: SMD
Frequency: 170MHz
Collector-emitter voltage: 45V
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
100+4.12 грн
102+3.75 грн
Мінімальне замовлення: 100
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IRFH5300TRPBF IRFH5300TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B6FA6CAF00F1A303005056AB0C4F&compId=irfh5300pbf.pdf?ci_sign=16877abd46adde0d05dd5636df9b1e140cef2b47 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5302DTRPBF IRFH5302DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B7349604E7F1A303005056AB0C4F&compId=irfh5302dpbf.pdf?ci_sign=778d1e41cc6ae612b54c507919fb9ae33e6c8a87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5302TRPBF IRFH5302TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B750AF2BF3F1A303005056AB0C4F&compId=irfh5302pbf.pdf?ci_sign=168686822e44708888b38f507989100363ce9544 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5304TRPBF IRFH5304TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B8DB432F7FF1A303005056AB0C4F&compId=irfh5304pbf.pdf?ci_sign=079e791adf6bc18ca27c2f430c26034f8cc54991 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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XMC1403Q048X0200AAXUMA1 XMC1403Q048X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
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XMC1403Q048X0064AAXUMA1 XMC1403Q048X0064AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
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XMC1403Q048X0128AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 128kB FLASH
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XMC1403Q064X0064AAXUMA1 XMC1403Q064X0064AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 64kB FLASH
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XMC1403Q064X0128AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 128kB FLASH
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XMC1403Q064X0200AAXUMA1 XMC1403Q064X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
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ICE5AR4780BZSXKLA1
+1
 		ICE5AR4780BZSXKLA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F2AF8C00A50A18&compId=ICE5ARxxxxBZS.pdf?ci_sign=a62ab432ead4174929122b170c27ba0a6892bb00 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
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AUIPS71451GTR AUIPS71451GTR INFINEON TECHNOLOGIES auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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AUIRFN7107TR AUIRFN7107TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E89CC18E454A143&compId=auirfn7107.pdf?ci_sign=34117ebffd8b16428073bda1d9cdede2ef85df1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
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AUIRFN8459TR AUIRFN8459TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E89D173ACBD6143&compId=AUIRFN8459.pdf?ci_sign=304ac1cc3debdf638fcaa4718a18ba27a1952b55 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel
Kind of channel: enhancement
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CY7C199D-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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S70KL1282GABHV020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282GABHB020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282GABHI020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282GABHI023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282GABHM023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_HyperRAM_Self-Refresh_DRAM_3_0_V_1_8_V_128-Mbit_Automotive-E_Grade_1_Preliminary-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1bf9b60e15a7 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282DPBHA020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHA023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHB020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHI020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHI023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHV020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHV023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1283GABHI023 INFINEON TECHNOLOGIES Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1283GABHV020 INFINEON TECHNOLOGIES Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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IDW15G120C5BFKSA1 IDW15G120C5BFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA6FC2EF738FA8&compId=IDW15G120C5B-DTE.pdf?ci_sign=85f1d236885fb5bf59de9c72a2006bd03edfbf33 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 8µA
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
1+442.93 грн
3+399.06 грн
В кошику  од. на суму  грн.
TLE6251DSXUMA2 INFINEON TECHNOLOGIES Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+98.80 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPA105N15N3GXKSA1 IPA105N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC96A1DD48411C&compId=IPA105N15N3G-DTE.pdf?ci_sign=7bede18c3b12ef519ef4c176a524c9d242154d61 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Mounting: THT
Case: TO220FP
Power dissipation: 40.5W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 37A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
2+360.60 грн
3+288.98 грн
4+243.87 грн
10+229.35 грн
100+220.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PVT312SPBF INFINEON TECHNOLOGIES pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 1296 шт:
термін постачання 21-30 дні (днів)
50+342.49 грн
100+285.92 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SPD50P03LGBTMA1 SPD50P03LGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DA9E7E5A51CC&compId=SPD50P03LGBTMA1-DTE.pdf?ci_sign=a20986a621e71ec1c6f409668776e8d55dea2f8c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 2485 шт:
термін постачання 21-30 дні (днів)
3+162.19 грн
10+120.02 грн
15+62.69 грн
40+58.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB4127PBF IRFB4127PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B721F1A6F5005056AB5A8F&compId=irfb4127pbf.pdf?ci_sign=ddafc47e6f7b0c1ae62e3c82167c1dd582ee261f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
4+125.14 грн
10+94.80 грн
12+80.27 грн
25+77.21 грн
31+75.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFB7537PBF IRFB7537PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A69262455901EC&compId=irfs7537pbf.pdf?ci_sign=5f35c07031438beffb94243d453935f7d2efe081 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 168 шт:
термін постачання 21-30 дні (днів)
3+140.78 грн
10+95.56 грн
16+56.57 грн
44+53.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB7430PBF IRFB7430PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA56B08FDB5EA&compId=IRFB7430PBF.pdf?ci_sign=06bb1ab19637c4d745e3676bfe9c624f7cca507e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Drain-source voltage: 40V
Drain current: 409A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
2+273.33 грн
3+227.82 грн
6+174.30 грн
15+165.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFB5620PBF IRFB5620PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5F284A99F1A6F5005056AB5A8F&compId=irfb5620pbf.pdf?ci_sign=dba5e26ac2c7961fde53bfdd1882c9038aa6ace9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
3+172.89 грн
10+100.15 грн
25+94.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYUSB3326-88LTXI INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
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CY8C21334-24PVXI INFINEON TECHNOLOGIES Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a description Category: Unclassified
Description: CY8C21334-24PVXI
на замовлення 2598 шт:
термін постачання 21-30 дні (днів)
66+412.47 грн
Мінімальне замовлення: 66
В кошику  од. на суму  грн.
DZ600N12K DZ600N12K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9CE3FC8D72469&compId=DZ600N18K.pdf?ci_sign=2fd24aaa0657958caf6547fe0085077ad61de6e6 Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: single diode
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+18297.74 грн
В кошику  од. на суму  грн.
IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8A6A5609611C&compId=IPP600N25N3G-DTE.pdf?ci_sign=eb7b93c1e4c9d590d6856df6ae36f640cede45f5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
2+209.94 грн
6+159.78 грн
16+151.37 грн
50+145.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC4800E196K1536AAXQMA1 XMC4800E196K1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
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IGB01N120H2ATMA1 IGB01N120H2ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB5517BC251820&compId=IGB01N120H2.pdf?ci_sign=6361a12a82833374daaa868f14dafdd53d870a3f Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 1.3A
Power dissipation: 28W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 3.5A
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Turn-on time: 20.9ns
Turn-off time: 493ns
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IRFB3207PBF IRFB3207PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Case: TO220AB
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
2+279.10 грн
3+233.17 грн
6+178.13 грн
14+168.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Drain-source voltage: 60V
Drain current: 195A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: tube
Gate charge: 186nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
на замовлення 936 шт:
термін постачання 21-30 дні (днів)
4+117.73 грн
10+80.27 грн
12+76.45 грн
33+72.63 грн
500+69.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY62147EV30LL-45B2XIT ?docID=45537
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
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IRFS3004TRL7PP irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRFH4234TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B2F08978C0BD61EC&compId=irfh4234pbf.pdf?ci_sign=95709b25779a1ca2b7065525af8bb5dc0ea0c9db
IRFH4234TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Trade name: FastIRFET
Drain-source voltage: 25V
Drain current: 22A
Type of transistor: N-MOSFET
Power dissipation: 3.5W
на замовлення 1647 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.29 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
CY62177EV30LL-55BAXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62177EV18LL-70BAXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
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CY62177EV30LL-55ZXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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В кошику  од. на суму  грн.
IRLHM620TRPBF pVersion=0046&contRep=ZT&docId=E22277530C4B63F1A303005056AB0C4F&compId=irlhm620pbf.pdf?ci_sign=c886920d7c2600102cb1c0b26f09f61fd0a26f02
IRLHM620TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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ICE5GR1680AGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F285348280EA18&compId=ICE5xRxxxxAG.pdf?ci_sign=9c829b5b683ea7948ea94422704a94b91a4ceeb5
ICE5GR1680AGXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 125kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Mounting: SMD
Case: PG-DSO-12
Operating temperature: -40...140°C
Duty cycle factor: 0...80%
Kind of integrated circuit: PWM controller
Topology: flyback
Power: 48/27/28W
Operating voltage: 10...25.5V DC
Frequency: 125kHz
Breakdown voltage: 800V
Output current: 5.8A
Number of channels: 1
Application: SMPS
Input voltage: 80...265V
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IPP055N08NF2SAKMA1 Infineon-IPP055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f6f7d91513e6
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+71.63 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
S70GL02GT12FHAV10 download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Application: automotive
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
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S70GL02GT12FHIV10 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: in-tray
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
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В кошику  од. на суму  грн.
S70GL02GT12FHIV13 download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
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В кошику  од. на суму  грн.
S70GL02GT12FHIV23 download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 120ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Gb FLASH
Mounting: SMD
Case: BGA64
Operating voltage: 2.7...3.6V
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BC817SUE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5ED6A827F8469&compId=BC817UE6327.pdf?ci_sign=273a25ffb9181e5f7966dc07fc73d775914d17ff
BC817SUE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Case: SC74
Mounting: SMD
Frequency: 170MHz
Collector-emitter voltage: 45V
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.12 грн
102+3.75 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
IRFH5300TRPBF pVersion=0046&contRep=ZT&docId=E221B6FA6CAF00F1A303005056AB0C4F&compId=irfh5300pbf.pdf?ci_sign=16877abd46adde0d05dd5636df9b1e140cef2b47
IRFH5300TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5302DTRPBF pVersion=0046&contRep=ZT&docId=E221B7349604E7F1A303005056AB0C4F&compId=irfh5302dpbf.pdf?ci_sign=778d1e41cc6ae612b54c507919fb9ae33e6c8a87
IRFH5302DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
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IRFH5302TRPBF pVersion=0046&contRep=ZT&docId=E221B750AF2BF3F1A303005056AB0C4F&compId=irfh5302pbf.pdf?ci_sign=168686822e44708888b38f507989100363ce9544
IRFH5302TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5304TRPBF pVersion=0046&contRep=ZT&docId=E221B8DB432F7FF1A303005056AB0C4F&compId=irfh5304pbf.pdf?ci_sign=079e791adf6bc18ca27c2f430c26034f8cc54991
IRFH5304TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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XMC1403Q048X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1403Q048X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
товару немає в наявності
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XMC1403Q048X0064AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1403Q048X0064AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
товару немає в наявності
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XMC1403Q048X0128AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 42
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-48
Memory: 16kB SRAM; 128kB FLASH
товару немає в наявності
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XMC1403Q064X0064AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1403Q064X0064AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 64kB FLASH
товару немає в наявності
В кошику  од. на суму  грн.
XMC1403Q064X0128AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 128kB FLASH
товару немає в наявності
В кошику  од. на суму  грн.
XMC1403Q064X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1403Q064X0200AAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Number of inputs/outputs: 55
Number of 16bit timers: 16
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Number of A/D channels: 12
Type of integrated circuit: ARM microcontroller
Kind of architecture: Cortex M0
Family: XMC1400
Supply voltage: 1.8...5.5V DC
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
товару немає в наявності
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ICE5AR4780BZSXKLA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F2AF8C00A50A18&compId=ICE5ARxxxxBZS.pdf?ci_sign=a62ab432ead4174929122b170c27ba0a6892bb00
ICE5AR4780BZSXKLA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.6A; 100kHz; Ch: 1; DIP7; flyback; 0÷80%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.6A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...140°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...80%
Power: 27.5/15/16W
Application: SMPS
Operating voltage: 10...25.5V DC
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AUIPS71451GTR auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332
AUIPS71451GTR
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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AUIRFN7107TR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E89CC18E454A143&compId=auirfn7107.pdf?ci_sign=34117ebffd8b16428073bda1d9cdede2ef85df1d
AUIRFN7107TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
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AUIRFN8459TR pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E89D173ACBD6143&compId=AUIRFN8459.pdf?ci_sign=304ac1cc3debdf638fcaa4718a18ba27a1952b55
AUIRFN8459TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel
Kind of channel: enhancement
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CY7C199D-10VXIT Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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S70KL1282GABHV020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282GABHB020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282GABHI020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282GABHI023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282GABHM023 Infineon-S70KL1282_S70KS1282_HyperRAM_Self-Refresh_DRAM_3_0_V_1_8_V_128-Mbit_Automotive-E_Grade_1_Preliminary-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1bf9b60e15a7
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷125°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHA020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHA023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S70KL1282DPBHB020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHI020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
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S70KL1282DPBHI023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S70KL1282DPBHV020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S70KL1282DPBHV023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1283GABHI023 Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
S70KL1283GABHV020 Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9
Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
В кошику  од. на суму  грн.
IDW15G120C5BFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA6FC2EF738FA8&compId=IDW15G120C5B-DTE.pdf?ci_sign=85f1d236885fb5bf59de9c72a2006bd03edfbf33
IDW15G120C5BFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 8µA
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+442.93 грн
3+399.06 грн
В кошику  од. на суму  грн.
TLE6251DSXUMA2 Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+98.80 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPA105N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC96A1DD48411C&compId=IPA105N15N3G-DTE.pdf?ci_sign=7bede18c3b12ef519ef4c176a524c9d242154d61
IPA105N15N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 37A; 40.5W; TO220FP
Mounting: THT
Case: TO220FP
Power dissipation: 40.5W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 37A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+360.60 грн
3+288.98 грн
4+243.87 грн
10+229.35 грн
100+220.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PVT312SPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
на замовлення 1296 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+342.49 грн
100+285.92 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SPD50P03LGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92DA9E7E5A51CC&compId=SPD50P03LGBTMA1-DTE.pdf?ci_sign=a20986a621e71ec1c6f409668776e8d55dea2f8c
SPD50P03LGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 2485 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+162.19 грн
10+120.02 грн
15+62.69 грн
40+58.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB4127PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B721F1A6F5005056AB5A8F&compId=irfb4127pbf.pdf?ci_sign=ddafc47e6f7b0c1ae62e3c82167c1dd582ee261f
IRFB4127PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+125.14 грн
10+94.80 грн
12+80.27 грн
25+77.21 грн
31+75.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFB7537PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A69262455901EC&compId=irfs7537pbf.pdf?ci_sign=5f35c07031438beffb94243d453935f7d2efe081
IRFB7537PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 168 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+140.78 грн
10+95.56 грн
16+56.57 грн
44+53.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB7430PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCA56B08FDB5EA&compId=IRFB7430PBF.pdf?ci_sign=06bb1ab19637c4d745e3676bfe9c624f7cca507e
IRFB7430PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Drain-source voltage: 40V
Drain current: 409A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 300nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+273.33 грн
3+227.82 грн
6+174.30 грн
15+165.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFB5620PBF pVersion=0046&contRep=ZT&docId=E1C04E5F284A99F1A6F5005056AB5A8F&compId=irfb5620pbf.pdf?ci_sign=dba5e26ac2c7961fde53bfdd1882c9038aa6ace9
IRFB5620PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 97 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+172.89 грн
10+100.15 грн
25+94.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYUSB3326-88LTXI Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
товару немає в наявності
В кошику  од. на суму  грн.
CY8C21334-24PVXI description Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C21334-24PVXI
на замовлення 2598 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
66+412.47 грн
Мінімальне замовлення: 66
В кошику  од. на суму  грн.
DZ600N12K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9CE3FC8D72469&compId=DZ600N18K.pdf?ci_sign=2fd24aaa0657958caf6547fe0085077ad61de6e6
DZ600N12K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 0.75V
Load current: 600A
Semiconductor structure: single diode
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+18297.74 грн
В кошику  од. на суму  грн.
IPP600N25N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC8A6A5609611C&compId=IPP600N25N3G-DTE.pdf?ci_sign=eb7b93c1e4c9d590d6856df6ae36f640cede45f5
IPP600N25N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+209.94 грн
6+159.78 грн
16+151.37 грн
50+145.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC4800E196K1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196K1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
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IGB01N120H2ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB5517BC251820&compId=IGB01N120H2.pdf?ci_sign=6361a12a82833374daaa868f14dafdd53d870a3f
IGB01N120H2ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 1.3A
Power dissipation: 28W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 3.5A
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Turn-on time: 20.9ns
Turn-off time: 493ns
товару немає в наявності
В кошику  од. на суму  грн.
IRFB3207PBF pVersion=0046&contRep=ZT&docId=E221C6B370EE5BF1A303005056AB0C4F&compId=irfs3207pbf.pdf?ci_sign=9d5c11df231dd7c9061d11989f17acc39f514a7b
IRFB3207PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Case: TO220AB
Drain-source voltage: 75V
Drain current: 120A
On-state resistance: 4.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 330W
Polarisation: unipolar
Kind of package: tube
Gate charge: 180nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+279.10 грн
3+233.17 грн
6+178.13 грн
14+168.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFB7534PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B1A6856A8A3EC1EC&compId=irfs7534pbf.pdf?ci_sign=58374929d2da0655e279f40bd664245c1c9d1a2d
IRFB7534PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Drain-source voltage: 60V
Drain current: 195A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 294W
Polarisation: unipolar
Kind of package: tube
Gate charge: 186nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Case: TO220AB
на замовлення 936 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+117.73 грн
10+80.27 грн
12+76.45 грн
33+72.63 грн
500+69.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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