Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11884) > Сторінка 55 з 199

Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOIC
Part Status: Obsolete

Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 34A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6.6A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 7.1A 8-SOIC

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.4A/8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-SOIC

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 12V 6.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 8-SOIC

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 60V 2.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active

Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4.8A 1206-8

Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8

Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 12A PPAK CHIPFET

Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.1A, 10V
Power Dissipation (Max): 3.5W (Ta), 10.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 10 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 12A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 12A CHIPFET

Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active

Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 2.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 1206-8 ChipFET™

Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A/3.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™

Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 1206-8 ChipFET™

Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 8.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.1A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active

Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 3.7A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.7W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 8V 4A 1206-8

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.7A 1206-8

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A PPAK CHIPFET

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 2.5A CHIPFET

Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 7.3A 8-TSSOP

Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 6.8A 8TSSOP

Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 400µA
Supplier Device Package: 8-TSSOP

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 28V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP

Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP

Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3.6A 8-TSSOP

Виробник: Vishay Siliconix
Description: MOSFET P-CH 200V 3.8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 15 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 10 V

Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16.1A, 10V
Power Dissipation (Max): 4.2W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V

Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 18.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 4.4A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2214 pF @ 125 V