| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CRCW0603280RFKEA | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; 280Ω; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Mounting: SMD Operating temperature: -55...155°C Resistance: 280Ω Body dimensions: 1.55x0.85x0.45mm Power: 0.125W Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Quantity in set/package: 5000pcs. Tolerance: ±1% |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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MCT06030C2800FP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V Type of resistor: thin film Mounting: SMD Manufacturer series: MCT0603 Operating temperature: -55...155°C Version: 0 Resistance: 280Ω Power: 0.125W Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Tolerance: ±1% |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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MCT06030C2800DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Resistance: 280Ω Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.5% Operating voltage: 75V Temperature coefficient: 50ppm/°C Operating temperature: -55...155°C Version: 0 Roll diameter max.: 180mm Mounting: SMD Manufacturer series: MCT0603 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| VO14642AT | VISHAY |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1÷1.5VDC; Icntrl max: 50mA; 2A Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1...1.5V DC Control current max.: 50mA Max. operating current: 2A Relay variant: 1-phase On-state resistance: 0.25Ω Mounting: PCB Case: DIP6 Insulation voltage: 5.3kV Switched voltage: max. 60V Operating temperature: -55...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
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5KP36AHE3_A/C | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 5kW; 40÷44.2V; unidirectional; P600; TransZorb®; 5KP Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Semiconductor structure: unidirectional Case: P600 Mounting: THT Leakage current: 2µA Manufacturer series: 5KP Technology: TransZorb® Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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293D336X9020D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - inch: 2917 Case - mm: 7343 Manufacturer series: Tantamount |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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| MKP1848SE58070JP4C | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 8uF; 700VDC; Leads: radial; THT; ESR: 11mΩ Type of capacitor: polypropylene Capacitance: 8µF Operating voltage: 700V DC Leads: radial Mounting: THT ESR value: 11mΩ Tolerance: ±5% Terminal pitch: 37.49mm Conform to the norm: AEC-Q200 Operating temperature: -40...105°C |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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SMBJ6.5CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22V Max. forward impulse current: 53.6A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.5mA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ6.5CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22V Max. forward impulse current: 53.6A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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SIHD7N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 40nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIHD7N60E-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIHF7N60E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 40nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHP7N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 78W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 40nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI3458BDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 10A Power dissipation: 3.3W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 128mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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SI3459BDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A Pulsed drain current: -8A Power dissipation: 3.3W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 288mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
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SI3437DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 790mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI3457CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Pulsed drain current: -20A Power dissipation: 3W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 113mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3443DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI3437DV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 790mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3483DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -30A Power dissipation: 3W Case: SC74; TSOP6 On-state resistance: 51.3mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3477DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -40A Power dissipation: 4.2W Case: SC74; TSOP6 Gate-source voltage: ±10V On-state resistance: 33mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3493BDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -25A Power dissipation: 2.97W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 43.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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Si3493DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -32A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 51.1mΩ Mounting: SMD Gate charge: 52.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI3424CDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3440ADV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.2A Pulsed drain current: 4A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 432mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3417DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -50A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI3443CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3443CDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI3440DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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Si3410DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 30A Power dissipation: 4.1W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3424CDV-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3429EDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -40A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 38mΩ Mounting: SMD Gate charge: 43.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3473CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -20A Power dissipation: 4.2W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 36mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3473DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -30A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 38.8mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW12103K30FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 3.3kΩ Mounting: SMD Case - inch: 1210 Case - mm: 3225 Power: 0.5W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 3.2x2.5x0.55mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW12103K30FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 3.3kΩ Mounting: SMD Case - inch: 1210 Case - mm: 3225 Power: 0.5W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Quantity in set/package: 5000pcs. Body dimensions: 3.2x2.5x0.55mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW08051K91FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V Type of resistor: thick film Resistance: 1.91kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||
| VS-EPH6007L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 520A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2.2V Reverse recovery time: 65ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-A5PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Max. load current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-A5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Application: automotive industry Max. load current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C4PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Application: automotive industry Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 330A Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.6V Reverse recovery time: 46ns Application: automotive industry Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 425A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 68ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E4PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 425A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 68ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD Max. forward voltage: 1.7V Reverse recovery time: 29ns |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||
 |
MBE04140C6800FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C Diameter: 4.2mm Type of resistor: metal film Mounting: THT Operating temperature: -55...155°C Resistance: 680Ω Length: 11.9mm Leads: axial Body dimensions: Ø4.2x11.9mm Power: 1W Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.8x31mm Operating voltage: 500V Tolerance: ±1% |
на замовлення 507 шт: термін постачання 14-30 дні (днів) |
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 |
IRF9620STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 1.5Ω Pulsed drain current: -14A Power dissipation: 40W Polarisation: unipolar Drain current: -2A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
 |
VS-26MT40 | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 25A Max. forward impulse current: 360A Electrical mounting: THT Version: square Max. forward voltage: 1.26V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: D-63 Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| VS-200MT40KPBF | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 200A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.4V Leads: M5 screws Case: MTK Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIZF928DT-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A Case: PowerPAIR® 6x5 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: -12...16V Semiconductor structure: asymmetric Pulsed drain current: 150...400A Polarisation: unipolar Technology: TrenchFET® Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
 |
SIHP11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
на замовлення 145 шт: термін постачання 14-30 дні (днів) |
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SIHA11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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|
SIHA11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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|
SIHB11N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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|
SIHB11N80AE-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 391mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 22A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
|
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SIHB11N80E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHD11N80AE-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 391mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
| SIHG11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIHG11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. |
| CRCW0603280RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 280Ω; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 280Ω
Body dimensions: 1.55x0.85x0.45mm
Power: 0.125W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Quantity in set/package: 5000pcs.
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thick film; 280Ω; SMD; 0603; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 280Ω
Body dimensions: 1.55x0.85x0.45mm
Power: 0.125W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Quantity in set/package: 5000pcs.
Tolerance: ±1%
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MCT06030C2800FP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Manufacturer series: MCT0603
Operating temperature: -55...155°C
Version: 0
Resistance: 280Ω
Power: 0.125W
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Manufacturer series: MCT0603
Operating temperature: -55...155°C
Version: 0
Resistance: 280Ω
Power: 0.125W
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Tolerance: ±1%
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| MCT06030C2800DP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 280Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Operating temperature: -55...155°C
Version: 0
Roll diameter max.: 180mm
Mounting: SMD
Manufacturer series: MCT0603
Category: SMD resistors
Description: Resistor: thin film; 280Ω; SMD; 0603; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Resistance: 280Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.5%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Operating temperature: -55...155°C
Version: 0
Roll diameter max.: 180mm
Mounting: SMD
Manufacturer series: MCT0603
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| VO14642AT |
|
Виробник: VISHAY
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1÷1.5VDC; Icntrl max: 50mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1...1.5V DC
Control current max.: 50mA
Max. operating current: 2A
Relay variant: 1-phase
On-state resistance: 0.25Ω
Mounting: PCB
Case: DIP6
Insulation voltage: 5.3kV
Switched voltage: max. 60V
Operating temperature: -55...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1÷1.5VDC; Icntrl max: 50mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1...1.5V DC
Control current max.: 50mA
Max. operating current: 2A
Relay variant: 1-phase
On-state resistance: 0.25Ω
Mounting: PCB
Case: DIP6
Insulation voltage: 5.3kV
Switched voltage: max. 60V
Operating temperature: -55...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 5KP36AHE3_A/C |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷44.2V; unidirectional; P600; TransZorb®; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Manufacturer series: 5KP
Technology: TransZorb®
Application: automotive industry
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 40÷44.2V; unidirectional; P600; TransZorb®; 5KP
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Semiconductor structure: unidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Manufacturer series: 5KP
Technology: TransZorb®
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| 293D336X9020D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - inch: 2917
Case - mm: 7343
Manufacturer series: Tantamount
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 74.75 грн |
| 10+ | 54.35 грн |
| 50+ | 39.19 грн |
| MKP1848SE58070JP4C |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 8uF; 700VDC; Leads: radial; THT; ESR: 11mΩ
Type of capacitor: polypropylene
Capacitance: 8µF
Operating voltage: 700V DC
Leads: radial
Mounting: THT
ESR value: 11mΩ
Tolerance: ±5%
Terminal pitch: 37.49mm
Conform to the norm: AEC-Q200
Operating temperature: -40...105°C
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 8uF; 700VDC; Leads: radial; THT; ESR: 11mΩ
Type of capacitor: polypropylene
Capacitance: 8µF
Operating voltage: 700V DC
Leads: radial
Mounting: THT
ESR value: 11mΩ
Tolerance: ±5%
Terminal pitch: 37.49mm
Conform to the norm: AEC-Q200
Operating temperature: -40...105°C
на замовлення 70 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 388.35 грн |
| SMBJ6.5CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| SMBJ6.5CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SIHD7N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIHD7N60E-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIHF7N60E-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
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В кошику
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| SIHP7N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 18A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 40nC
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В кошику
од. на суму грн.
| SI3458BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 10A
Power dissipation: 3.3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 128mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 64.73 грн |
| 10+ | 46.30 грн |
| SI3459BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -8A
Power dissipation: 3.3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 288mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.87 грн |
| 13+ | 35.05 грн |
| 50+ | 30.05 грн |
| 100+ | 28.10 грн |
| SI3437DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SI3457CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3443DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SI3437DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3483DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3W
Case: SC74; TSOP6
On-state resistance: 51.3mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3W
Case: SC74; TSOP6
On-state resistance: 51.3mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3477DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±10V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±10V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3493BDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 2.97W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 43.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 2.97W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 43.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| Si3493DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 51.1mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 51.1mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SI3424CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3440ADV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3417DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SI3443CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3443CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SI3440DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| Si3410DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3424CDV-T1-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| SI3429EDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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Мінімальне замовлення: 3000 шт
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| SI3473CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| SI3473DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| CRCW12103K30FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
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| CRCW12103K30FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
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Мінімальне замовлення: 5000 шт
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| CRCW08051K91FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V
Type of resistor: thick film
Resistance: 1.91kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V
Type of resistor: thick film
Resistance: 1.91kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
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Мінімальне замовлення: 100 шт
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| VS-EPH6007L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
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| VS-C4PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
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| VS-A5PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
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| VS-A5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
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| VS-C4PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Application: automotive industry
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Application: automotive industry
Max. load current: 60A
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| VS-C5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.6V
Reverse recovery time: 46ns
Application: automotive industry
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.6V
Reverse recovery time: 46ns
Application: automotive industry
Max. load current: 60A
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| VS-E4PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
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| VS-E4PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Application: automotive industry
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| VS-E5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD
Max. forward voltage: 1.7V
Reverse recovery time: 29ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD
Max. forward voltage: 1.7V
Reverse recovery time: 29ns
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Мінімальне замовлення: 500 шт
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| MBE04140C6800FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C
Diameter: 4.2mm
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 680Ω
Length: 11.9mm
Leads: axial
Body dimensions: Ø4.2x11.9mm
Power: 1W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.8x31mm
Operating voltage: 500V
Tolerance: ±1%
Category: THT Resistors
Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C
Diameter: 4.2mm
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 680Ω
Length: 11.9mm
Leads: axial
Body dimensions: Ø4.2x11.9mm
Power: 1W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.8x31mm
Operating voltage: 500V
Tolerance: ±1%
на замовлення 507 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.82 грн |
| 19+ | 22.35 грн |
| 25+ | 18.79 грн |
| 50+ | 16.34 грн |
| 100+ | 14.31 грн |
| 250+ | 12.11 грн |
| 500+ | 10.84 грн |
| IRF9620STRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Pulsed drain current: -14A
Power dissipation: 40W
Polarisation: unipolar
Drain current: -2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Pulsed drain current: -14A
Power dissipation: 40W
Polarisation: unipolar
Drain current: -2A
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Мінімальне замовлення: 800 шт
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| VS-26MT40 |
|
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 360A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.26V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 360A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.26V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
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| VS-200MT40KPBF |
|
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 200A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.4V
Leads: M5 screws
Case: MTK
Kind of package: bulk
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 200A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.4V
Leads: M5 screws
Case: MTK
Kind of package: bulk
Mechanical mounting: screw
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| SIZF928DT-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A
Case: PowerPAIR® 6x5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: -12...16V
Semiconductor structure: asymmetric
Pulsed drain current: 150...400A
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A
Case: PowerPAIR® 6x5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: -12...16V
Semiconductor structure: asymmetric
Pulsed drain current: 150...400A
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SIHP11N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
на замовлення 145 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.59 грн |
| 10+ | 108.35 грн |
| 50+ | 93.96 грн |
| SIHA11N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
товару немає в наявності
В кошику
од. на суму грн.
| SIHA11N80E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
товару немає в наявності
В кошику
од. на суму грн.
| SIHB11N80AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
товару немає в наявності
В кошику
од. на суму грн.
| SIHB11N80AE-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| SIHB11N80E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
товару немає в наявності
В кошику
од. на суму грн.
| SIHD11N80AE-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| SIHG11N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
товару немає в наявності
В кошику
од. на суму грн.
| SIHG11N80E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
товару немає в наявності
В кошику
од. на суму грн.