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IXTP300N04T2 IXTP300N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_300n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 300A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
на замовлення 478 шт:
термін постачання 21-31 дні (днів)
1+398.82 грн
50+ 307.06 грн
100+ 274.73 грн
IXTP36N20T IXTP36N20T IXYS Description: MOSFET N-CH 200V 36A TO-220
товар відсутній
IXTP36N30T IXTP36N30T IXYS Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
товар відсутній
IXTP38N15T IXTP38N15T IXYS Description: MOSFET N-CH 150V 38A TO-220
товар відсутній
IXTP3N110 IXTP3N110 IXYS IXT(A,P)3N110,120.pdf Description: MOSFET N-CH 1100V 3A TO-220
товар відсутній
IXTP42N15T IXTP42N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_42n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 42A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
товар відсутній
IXTP44N15T IXTP44N15T IXYS Description: MOSFET N-CH 150V 44A TO-220
товар відсутній
IXTP44N25T IXTP44N25T IXYS Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drain to Source Voltage (Vdss): 250 V
товар відсутній
IXTP44N30T IXTP44N30T IXYS Description: MOSFET N-CH 300V 44A TO-220
товар відсутній
IXTP50N25T IXTP50N25T IXYS DS99346A(IXTA-TH-TP-TQ50N25T).pdf Description: MOSFET N-CH 250V 50A TO220AB
товар відсутній
IXTP54N30T IXTP54N30T IXYS Description: MOSFET N-CH 300V 54A TO-220
товар відсутній
IXTP56N15T IXTP56N15T IXYS IXT(A,P)56N15T.pdf Description: MOSFET N-CH 150V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
товар відсутній
IXTP72N20T IXTP72N20T IXYS Description: MOSFET N-CH 200V 72A TO-220
товар відсутній
IXTP74N15T IXTP74N15T IXYS Description: MOSFET N-CH 150V 74A TO-220
товар відсутній
IXTP76N25T IXTP76N25T IXYS DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf Description: MOSFET N-CH 250V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+441.47 грн
10+ 382.06 грн
IXTP86N20T IXTP86N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 86A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
1+402.37 грн
10+ 325.17 грн
IXTQ102N25T IXTQ102N25T IXYS Description: MOSFET N-CH 250V 102A TO-3P
товар відсутній
IXTQ120N15T IXTQ120N15T IXYS Description: MOSFET N-CH 150V 120A TO3P
товар відсутній
IXTQ130N15T IXTQ130N15T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 130A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
товар відсутній
IXTQ30N50L IXTQ30N50L IXYS DS99786(IXTH-TQ-TT30N50L).pdf Description: MOSFET N-CH 500V 30A TO-3P
товар відсутній
IXTQ30N60L2 IXTQ30N60L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_30n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
1+1222.76 грн
30+ 953.45 грн
120+ 897.37 грн
IXTQ36N20T IXTQ36N20T IXYS Description: MOSFET N-CH 200V TO-3P
товар відсутній
IXTQ40N50L2 IXTQ40N50L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_40n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товар відсутній
IXTQ44N30T IXTQ44N30T IXYS Description: MOSFET N-CH 300V 44A TO-3P
товар відсутній
IXTQ48N20T IXTQ48N20T IXYS Description: MOSFET N-CH 200V 48A TO3P
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)
30+322.16 грн
Мінімальне замовлення: 30
IXTQ54N30T IXTQ54N30T IXYS Description: MOSFET N-CH 300V 54A TO-3P
товар відсутній
IXTQ56N15T IXTQ56N15T IXYS Description: MOSFET N-CH 150V 56A TO-3P
товар відсутній
IXTQ60N30T IXTQ60N30T IXYS Description: MOSFET N-CH 300V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
товар відсутній
IXTQ62N25T IXTQ62N25T IXYS Description: MOSFET N-CH 250V 62A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-3P
Drain to Source Voltage (Vdss): 250 V
товар відсутній
IXTQ72N20T IXTQ72N20T IXYS Description: MOSFET N-CH 200V 72A TO-3P
товар відсутній
IXTQ72N30T IXTQ72N30T IXYS Description: MOSFET N-CH 300V 72A TO-3P
товар відсутній
IXTQ74N15T IXTQ74N15T IXYS Description: MOSFET N-CH 150V 74A TO-3P
товар відсутній
IXTQ76N25T IXTQ76N25T IXYS DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf Description: MOSFET N-CH 250V 76A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+393.13 грн
IXTQ80N28T IXTQ80N28T IXYS DS99355B(IXTQ80N28T).pdf Description: MOSFET N-CH 280V 80A TO-3P
товар відсутній
IXTQ86N20T IXTQ86N20T IXYS DS99664A(IXTA-TP-TQ86N20T).pdf Description: MOSFET N-CH 200V 86A TO3P
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
IXTQ88N15 IXTQ88N15 IXYS Description: MOSFET N-CH 150V 88A TO-3P
товар відсутній
IXTQ96N25T IXTQ96N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_96n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 96A TO3P
товар відсутній
IXTQ98N20T IXTQ98N20T IXYS Description: MOSFET N-CH 200V 98A TO-3P
товар відсутній
IXTR30N25 IXTR30N25 IXYS 98873.pdf Description: MOSFET N-CH 250V 25A ISOPLUS247
товар відсутній
IXTT30N50L IXTT30N50L IXYS DS99786(IXTH-TQ-TT30N50L).pdf Description: MOSFET N-CH 500V 30A TO-268
товар відсутній
IXTT30N50L2 IXTT30N50L2 IXYS LinearL2TM.pdf Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
товар відсутній
IXTT30N60L2 IXTT30N60L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_30n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
товар відсутній
IXTT40N50L2 IXTT40N50L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_40n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товар відсутній
IXTT60N10 IXTT60N10 IXYS 99069.pdf Description: MOSFET N-CH 100V 60A TO268
товар відсутній
IXTT72N20 IXTT72N20 IXYS 99019.pdf Description: MOSFET N-CH 200V 72A TO-268
товар відсутній
IXTT75N10 IXTT75N10 IXYS 91533.pdf Description: MOSFET N-CH 100V 75A TO268
товар відсутній
IXTU05N100 IXTU05N100 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_05n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 750MA TO251
товар відсутній
IXTU08N100P IXTU08N100P IXYS Description: MOSFET N-CH 1000V 8A TO-251
товар відсутній
IXTV102N25T IXYS Description: MOSFET N-CH 250V 102A PLUS220
товар відсутній
IXTV120N15T IXTV120N15T IXYS Description: MOSFET N-CH 150V 120A PLUS220
товар відсутній
IXTV60N30T IXTV60N30T IXYS Description: MOSFET N-CH 300V 60A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: PLUS220
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
товар відсутній
IXTV72N30T IXYS Description: MOSFET N-CH 300V 72A PLUS220
товар відсутній
IXTV96N25T IXYS DS99863(IXTH-TQ-TV96N25T).pdf Description: MOSFET N-CH 250V 96A PLUS220
товар відсутній
IXTV98N20T IXYS Description: MOSFET N-CH 200V 98A PLUS220
товар відсутній
IXTX60N50L2 IXTX60N50L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_60n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 60A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 286 шт:
термін постачання 21-31 дні (днів)
1+2429.16 грн
30+ 1939.22 грн
120+ 1818.04 грн
IXTX90N25L2 IXTX90N25L2 IXYS DS100080(IXTK-TX90N25L2).pdf Description: MOSFET N-CH 250V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
товар відсутній
IXTY06N120P IXTY06N120P IXYS Description: MOSFET N-CH 1200V 90A TO252
товар відсутній
IXTY08N120P IXTY08N120P IXYS Description: MOSFET N-CH 1200V 8A TO-220
товар відсутній
IXTY15N20T IXTY15N20T IXYS Description: MOSFET N-CH 200V 15A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
товар відсутній
IXTY1N120P IXTY1N120P IXYS a Description: MOSFET N-CH 1200V 1A TO252
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)
IXTP300N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_300n04t2_datasheet.pdf.pdf
IXTP300N04T2
Виробник: IXYS
Description: MOSFET N-CH 40V 300A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
на замовлення 478 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+398.82 грн
50+ 307.06 грн
100+ 274.73 грн
IXTP36N20T
IXTP36N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO-220
товар відсутній
IXTP36N30T
IXTP36N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
товар відсутній
IXTP38N15T
IXTP38N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 38A TO-220
товар відсутній
IXTP3N110 IXT(A,P)3N110,120.pdf
IXTP3N110
Виробник: IXYS
Description: MOSFET N-CH 1100V 3A TO-220
товар відсутній
IXTP42N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_42n15t_datasheet.pdf.pdf
IXTP42N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 42A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
товар відсутній
IXTP44N15T
IXTP44N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 44A TO-220
товар відсутній
IXTP44N25T
IXTP44N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Drain to Source Voltage (Vdss): 250 V
товар відсутній
IXTP44N30T
IXTP44N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 44A TO-220
товар відсутній
IXTP50N25T DS99346A(IXTA-TH-TP-TQ50N25T).pdf
IXTP50N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 50A TO220AB
товар відсутній
IXTP54N30T
IXTP54N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 54A TO-220
товар відсутній
IXTP56N15T IXT(A,P)56N15T.pdf
IXTP56N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 28A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
товар відсутній
IXTP72N20T
IXTP72N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 72A TO-220
товар відсутній
IXTP74N15T
IXTP74N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 74A TO-220
товар відсутній
IXTP76N25T DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf
IXTP76N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+441.47 грн
10+ 382.06 грн
IXTP86N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_86n20t_datasheet.pdf.pdf
IXTP86N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 86A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+402.37 грн
10+ 325.17 грн
IXTQ102N25T
IXTQ102N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 102A TO-3P
товар відсутній
IXTQ120N15T
IXTQ120N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 120A TO3P
товар відсутній
IXTQ130N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_130n15t_datasheet.pdf.pdf
IXTQ130N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 130A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 25 V
товар відсутній
IXTQ30N50L DS99786(IXTH-TQ-TT30N50L).pdf
IXTQ30N50L
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO-3P
товар відсутній
IXTQ30N60L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_30n60_datasheet.pdf.pdf
IXTQ30N60L2
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1222.76 грн
30+ 953.45 грн
120+ 897.37 грн
IXTQ36N20T
IXTQ36N20T
Виробник: IXYS
Description: MOSFET N-CH 200V TO-3P
товар відсутній
IXTQ40N50L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_40n50_datasheet.pdf.pdf
IXTQ40N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товар відсутній
IXTQ44N30T
IXTQ44N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 44A TO-3P
товар відсутній
IXTQ48N20T
IXTQ48N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 48A TO3P
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
30+322.16 грн
Мінімальне замовлення: 30
IXTQ54N30T
IXTQ54N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 54A TO-3P
товар відсутній
IXTQ56N15T
IXTQ56N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 56A TO-3P
товар відсутній
IXTQ60N30T
IXTQ60N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
товар відсутній
IXTQ62N25T
IXTQ62N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 62A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-3P
Drain to Source Voltage (Vdss): 250 V
товар відсутній
IXTQ72N20T
IXTQ72N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 72A TO-3P
товар відсутній
IXTQ72N30T
IXTQ72N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 72A TO-3P
товар відсутній
IXTQ74N15T
IXTQ74N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 74A TO-3P
товар відсутній
IXTQ76N25T DS99663C(IXTA-TH-TI-TP-TQ76N25T).pdf
IXTQ76N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 76A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+393.13 грн
IXTQ80N28T DS99355B(IXTQ80N28T).pdf
IXTQ80N28T
Виробник: IXYS
Description: MOSFET N-CH 280V 80A TO-3P
товар відсутній
IXTQ86N20T DS99664A(IXTA-TP-TQ86N20T).pdf
IXTQ86N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 86A TO3P
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
IXTQ88N15
IXTQ88N15
Виробник: IXYS
Description: MOSFET N-CH 150V 88A TO-3P
товар відсутній
IXTQ96N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_96n25t_datasheet.pdf.pdf
IXTQ96N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 96A TO3P
товар відсутній
IXTQ98N20T
IXTQ98N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 98A TO-3P
товар відсутній
IXTR30N25 98873.pdf
IXTR30N25
Виробник: IXYS
Description: MOSFET N-CH 250V 25A ISOPLUS247
товар відсутній
IXTT30N50L DS99786(IXTH-TQ-TT30N50L).pdf
IXTT30N50L
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO-268
товар відсутній
IXTT30N50L2 LinearL2TM.pdf
IXTT30N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
товар відсутній
IXTT30N60L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_30n60_datasheet.pdf.pdf
IXTT30N60L2
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
товар відсутній
IXTT40N50L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_40n50_datasheet.pdf.pdf
IXTT40N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
товар відсутній
IXTT60N10 99069.pdf
IXTT60N10
Виробник: IXYS
Description: MOSFET N-CH 100V 60A TO268
товар відсутній
IXTT72N20 99019.pdf
IXTT72N20
Виробник: IXYS
Description: MOSFET N-CH 200V 72A TO-268
товар відсутній
IXTT75N10 91533.pdf
IXTT75N10
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO268
товар відсутній
IXTU05N100 littelfuse_discrete_mosfets_n-channel_standard_ixt_05n100_datasheet.pdf.pdf
IXTU05N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO251
товар відсутній
IXTU08N100P
IXTU08N100P
Виробник: IXYS
Description: MOSFET N-CH 1000V 8A TO-251
товар відсутній
IXTV102N25T
Виробник: IXYS
Description: MOSFET N-CH 250V 102A PLUS220
товар відсутній
IXTV120N15T
IXTV120N15T
Виробник: IXYS
Description: MOSFET N-CH 150V 120A PLUS220
товар відсутній
IXTV60N30T
IXTV60N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 60A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Supplier Device Package: PLUS220
Part Status: Active
Drain to Source Voltage (Vdss): 300 V
товар відсутній
IXTV72N30T
Виробник: IXYS
Description: MOSFET N-CH 300V 72A PLUS220
товар відсутній
IXTV96N25T DS99863(IXTH-TQ-TV96N25T).pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 96A PLUS220
товар відсутній
IXTV98N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 98A PLUS220
товар відсутній
IXTX60N50L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_60n50_datasheet.pdf.pdf
IXTX60N50L2
Виробник: IXYS
Description: MOSFET N-CH 500V 60A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 610 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 286 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2429.16 грн
30+ 1939.22 грн
120+ 1818.04 грн
IXTX90N25L2 DS100080(IXTK-TX90N25L2).pdf
IXTX90N25L2
Виробник: IXYS
Description: MOSFET N-CH 250V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
товар відсутній
IXTY06N120P
IXTY06N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 90A TO252
товар відсутній
IXTY08N120P
IXTY08N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 8A TO-220
товар відсутній
IXTY15N20T
IXTY15N20T
Виробник: IXYS
Description: MOSFET N-CH 200V 15A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
товар відсутній
IXTY1N120P a
IXTY1N120P
Виробник: IXYS
Description: MOSFET N-CH 1200V 1A TO252
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)
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